CN113300219A - Warpage-adjustable Vcsel epitaxial structure and preparation method thereof - Google Patents
Warpage-adjustable Vcsel epitaxial structure and preparation method thereof Download PDFInfo
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- CN113300219A CN113300219A CN202110572877.8A CN202110572877A CN113300219A CN 113300219 A CN113300219 A CN 113300219A CN 202110572877 A CN202110572877 A CN 202110572877A CN 113300219 A CN113300219 A CN 113300219A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 32
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 24
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 18
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims description 18
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 9
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000005922 Phosphane Substances 0.000 description 4
- 229910000064 phosphane Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
The invention discloses a warpage-adjustable Vcsel epitaxial structure and a preparation method thereof, and relates to the technical field of laser chips. The invention discloses a warpage-adjustable Vcsel epitaxial structure which comprises a substrate, wherein a buffer layer, an N-type doped DBR, an active layer, an oxidation limiting layer, a P-type doped DBR and an ohmic contact layer are sequentially deposited on the substrate, and stress compensation layers are periodically arranged in the N-type doped DBR and the P-type doped DBR. The invention discloses a warpage-adjustable Vcsel epitaxial structure and a preparation method thereof.
Description
Technical Field
The invention relates to the technical field of laser chips, in particular to a warpage-adjustable Vcsel epitaxial structure and a preparation method thereof.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) play an increasingly important role in new optoelectronic fields. Different from the traditional edge-emitting laser, the VCSEL is a novel semiconductor laser for emitting light from the direction vertical to the surface of a semiconductor substrate, and has the advantages of single longitudinal mode, small divergence angle, circularly symmetric light spots, high coupling efficiency, low threshold value, high modulation rate, small volume, two-dimensional integration, on-chip test, low price and the like.
At present, most VCSELs are grown on GaAs substrates by using MOCVD equipment, and because the active region is short, the DBR needs to have high reflectivity to obtain large gain so as to form lasing. This requires that the DBR be grown for a relatively large number of cycles, whereas a typical DBR is made of Al(x)Ga(1-x)As/Al(y)Ga(1-y)Although the crystal lattices of AlGaAs and GaAs are similar, after the number of cycles is increased, large stress is still formed in the epitaxial layer due to the mismatching of the crystal lattices, and the stress not only causes the deterioration of the crystal quality, but also causes the bending of the epitaxial wafer, thereby affecting the uniformity of the epitaxial layer.
Disclosure of Invention
In view of the above problems, the present invention aims to disclose a warpage-adjustable Vcsel epitaxial structure and a method for manufacturing the same, in which a stress compensation layer is periodically disposed, so that not only can the stress of the whole epitaxial layer be reduced and the crystal quality of the epitaxial layer be improved, but also the warpage of the epitaxial wafer can be reduced and the uniformity of each parameter of the epitaxial wafer can be improved.
Specifically, the warpage-adjustable Vcsel epitaxial structure comprises a substrate, a buffer layer, an N-type doped DBR, an active layer, an oxidation limiting layer, a P-type doped DBR and an ohmic contact layer, wherein stress compensation layers are periodically arranged in the N-type doped DBR and the P-type doped DBR.
Further, the material of the stress compensation layer is GaxIn(1-x)P。
Furthermore, the value range of X is 0.4-0.6.
Further, the optical thickness of the compensation layer is lambda/4.
Further, the N-type doped DBR comprises 25-35 pairs of Al which are grown in an overlapping mode0.1GaAs/Al0.9GaAs DBR layer with optical thickness of lambda/4 and doping concentration of 1E17-1E20。
Further, the P-type doped DBR comprises 15-25 pairs of Al which are grown in an overlapping mode0.1GaAs/Al0.9GaAs DBR layer with optical thickness of lambda/4 and doping concentration of 1E17-1E20。
Furthermore, in the N-type doped DBR or the P-type doped DBR, 4-20 pairs of DBR layers are arranged between two adjacent stress compensation layers. Preferably 5 pairs of DBR layers are spaced.
Furthermore, the active layer adopts an InGaAs/GaAsP quantum well structure, and the periodicity of the quantum well structure is 3-6.
In addition, the invention also discloses a preparation method of the warpage-adjustable Vcsel epitaxial structure, which comprises the following steps:
s1: taking N-type GaAs as a growth substrate, putting the N-type GaAs into an MOCVD system for growth, controlling the pressure of a reaction chamber to be 50-100mbar, the growth temperature to be 670-750 ℃, taking H2 as a carrier gas, firstly introducing arsine, trimethylgallium, silane and growing a buffer layer;
s2: introducing arsine, trimethyl gallium, trimethyl aluminum and silane, and growing an N-type doped DBR, wherein after 4-20 pairs of DBR layers are grown, a gas source is switched to introduce phosphine, trimethyl indium, trimethyl gallium and silane, and a stress compensation layer is grown;
s3: introducing arsine, phosphine, trimethyl gallium and trimethyl indium to grow an active layer;
s4: introducing arsine, trimethyl gallium, trimethyl aluminum and carbon tetrabromide to grow an oxidation limiting layer;
s5: introducing arsine, trimethyl gallium, trimethyl aluminum and carbon tetrabromide, and growing a P-type doped DBR, wherein after 4-20 pairs of DBR layers are grown, a gas source is switched to introduce phosphane, trimethyl indium, trimethyl gallium and diethyl zinc, and a stress compensation layer is grown;
s6: introducing arsine, trimethyl gallium and carbon tetrabromide to grow an ohmic contact layer;
s7: and after the growth is finished, the temperature of the reaction cavity is reduced to 100 ℃, and then the epitaxial wafer is taken out.
Further, the oxidation limiting layer is Al0.98GaAs material with doping type of p type and doping concentration of 1E17-1E20。
Further, the ohmic contact layer is made of GaAs material, the doping type is p-type, and the doping concentration is 1E19-1E21。
The invention has the beneficial effects that:
the invention discloses a warpage-adjustable Vcsel epitaxial structure, which achieves the effect of adjusting and reducing stress caused by DBR growth by periodically inserting a stress buffer layer in a DBR layer, reduces the stress of the whole epitaxial layer on one hand, improves the crystal quality of the epitaxial layer, reduces the warpage of an epitaxial wafer on the other hand, and improves the uniformity of each parameter of the epitaxial wafer.
Drawings
FIG. 1 is a schematic structural diagram of a warpage-adjustable Vcsel epitaxial structure of the present invention;
fig. 2 is a schematic structural diagram of a P-type doped DBR in an epitaxial structure according to an embodiment of the invention;
the semiconductor device comprises a substrate 101, a buffer layer 102, an N-type doped DBR103, an active layer 104, an oxidation limiting layer 105, a P-type doped DBR106, an ohmic contact layer 107 and a stress compensation layer 201.
Detailed Description
The present invention will be described in detail with reference to specific embodiments, and it is apparent that the described embodiments are only a part of the embodiments of the present application, rather than all embodiments, and all other embodiments obtained by those skilled in the art without inventive work based on the embodiments in the present application are within the scope of the present application. In addition, the process parameters which are not specially limited in the invention all adopt the conventional process parameters of the VCSEL chip.
As shown in fig. 1, the Vcsel epitaxial structure capable of adjusting warpage of the invention includes a substrate 101, where the substrate 101 is a GaAs substrate, and a buffer layer 102, an N-type doped DBR103, an active layer 104, an oxidation limiting layer 105, a P-type doped DBR106, and an ohmic contact layer 107 are sequentially deposited on the GaAs substrate.
Wherein the N-type doped DBR103 comprises 25-35 pairs of Al grown on top of each other0.1GaAs/Al0.9GaAs DBR layer with optical thickness of lambda/4, dopingAt a concentration of 1E17-1E20The P-doped DBR106 includes 15-25 pairs of Al grown on top of each other0.1GaAs/Al0.9GaAs DBR layer with optical thickness of λ/4 and doping concentration of 1E17-1E20The N-type doped DBR103 and the P-type doped DBR106 are periodically provided with stress compensation layers 201, and two adjacent stress compensation layers 201 are separated by 4-20 DBR layers, as shown in fig. 2, preferably, two adjacent stress compensation layers 201 are separated by 5 DBR layers, and the stress compensation layer 201 is GaxIn(1-x)The P material can adjust the lattice constant by adjusting the component X of Ga, so that the stress of the DBR material caused by lattice mismatch is compensated, the value range of X is 0.4-0.6, the stress compensation layer 201 can be adjusted according to the warping condition, the optical thickness is lambda/4, and the optical matching with the DBR structure is achieved.
The preparation method of the warpage-adjustable Vcsel epitaxial structure comprises the following steps:
s1: taking N-type GaAs as a growth substrate, putting the N-type GaAs into an MOCVD system for growth, controlling the pressure of a reaction chamber to be 50-100mbar, the growth temperature to be 670-750 ℃, taking H2 as a carrier gas, firstly introducing arsine, trimethylgallium and silane, growing a buffer layer 102 according to a conventional method, wherein the buffer layer 102 is made of GaAs, the doping type is N-type, and the doping concentration is 1E17-1E20；
S2: after the buffer layer is grown, introducing arsine, trimethyl gallium, trimethyl aluminum and silane, and growing an N-type doped DBR103 according to a conventional method, wherein the N-type doped DBR103 is Al with the optical thickness of lambda/40.1GaAs/Al0.9GaAs DBR, growing the DBR layer for 5 periods, and adding Al0.9GaAs to GaxIn(1-x)P material, specifically Ga in this example0.53In0.47P, switching a gas source into a gas source to introduce phosphane, trimethylindium, trimethylgallium and silane, growing to obtain a stress compensation layer 201 with the optical thickness of lambda/4, wherein the doping type of the stress compensation layer 201 in the N-type doped DBR is the same as that of the N-type doped DBR103, and repeatedly growing the DBR layer and the stress compensation layer 201 until the complete N-type doped DBR103 is obtained;
s3: introducing arsine, phosphane, trimethyl gallium and trimethyl indium, and growing according to a conventional method to obtain an active layer 104, wherein the active layer 104 adopts an InGaAs/GaAsP quantum well structure, and the number of cycles of the quantum well structure is 3-6;
s4: introducing arsine, trimethyl gallium, trimethyl aluminum and carbon tetrabromide, and growing an oxidation limiting layer 105 according to a conventional method, wherein the material of the oxidation limiting layer 105 is Al0.98GaAs, doping type is p type, doping concentration is 1E17-1E20；
S5: introducing arsine, trimethyl gallium, trimethyl aluminum and carbon tetrabromide, and growing P-type doped DBR106 by conventional method, wherein the P-type doped DBR106 is Al with optical thickness of lambda/40.1GaAs/Al0.9GaAs DBR, growing the DBR layer for 5 periods, and adding Al0.9GaAs to GaxIn(1-x)P material as the stress compensation layer 201, specifically Ga in this embodiment0.53In0.47P, namely when the stress compensation layer is grown, switching a gas source into introduction of phosphane, trimethyl indium, trimethyl gallium and diethyl zinc, growing to obtain the stress compensation layer 201 with the optical thickness of lambda/4, wherein the doping type of the stress compensation layer 201 in the P-type doped DBR is the same as that of the P-type doped DBR106, and repeatedly growing the DBR layer and the stress compensation layer 201 until the complete P-type doped DBR106 is obtained;
s6: introducing arsine, trimethyl gallium and carbon tetrabromide, and growing ohmic contact layer 107 by conventional method, wherein the ohmic contact layer 107 is made of GaAs, the doping type is p-type, and the doping concentration is 1E19-1E21；
S7: and after the growth is finished, the temperature of the reaction cavity is reduced to 100 ℃, and then the epitaxial wafer is taken out.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.
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Cited By (4)
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| CN113851927A (en) * | 2021-09-18 | 2021-12-28 | 常州纵慧芯光半导体科技有限公司 | Semiconductor laser |
| CN113872047A (en) * | 2021-08-26 | 2021-12-31 | 埃特曼(北京)半导体技术有限公司 | Laser and preparation method thereof |
| CN115216837A (en) * | 2022-07-07 | 2022-10-21 | 西安唐晶量子科技有限公司 | A method and laser for improving warpage of VCSEL epitaxial wafers |
| GB2612372A (en) * | 2021-11-02 | 2023-05-03 | Iqe Plc | A layered structure |
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