CN113299860B - Display substrate and preparation method thereof - Google Patents
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- CN113299860B CN113299860B CN202110587544.2A CN202110587544A CN113299860B CN 113299860 B CN113299860 B CN 113299860B CN 202110587544 A CN202110587544 A CN 202110587544A CN 113299860 B CN113299860 B CN 113299860B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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- H—ELECTRICITY
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Abstract
The embodiment of the disclosure provides a display substrate and a preparation method thereof, wherein the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, the marking area comprises at least one marking structure arranged on a substrate, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in a direction parallel to the substrate, and the light adjusting layer is used for realizing interference cancellation. According to the embodiment of the disclosure, the light adjusting layer is arranged for adjusting the optical path difference of light reflection, so that the diffraction problem caused by the reflection of the alignment mark is reduced by utilizing the interference principle, and the identification capability of the alignment mark is improved.
Description
Technical Field
The embodiments of the present disclosure relate to the field of display technologies, and in particular, to a display substrate and a method for manufacturing the same.
Background
An Organic Light-Emitting Diode (OLED) panel has many advantages of Light weight, active Light emission, fast response, wide viewing angle, rich color, high brightness, low power consumption, high and low temperature resistance, etc., and is known in the industry as a third generation display technology following a liquid crystal display. Each large panel manufacturer is preempting the OLED product market. The problem of OLED product yield is of great importance.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the disclosure provides a display substrate and a preparation method thereof, which can improve the identification capability of marks.
In one aspect, embodiments of the present application provide a display substrate, where the display substrate includes a display area and a peripheral area, where the peripheral area includes a marking area, where the marking area includes at least one marking structure disposed on a substrate, where the marking structure includes a light adjusting layer and a marking layer, and a distance between an edge of the light adjusting layer adjacent to the marking layer and an edge of the marking layer adjacent to the light adjusting layer is within a preset range in a direction parallel to the substrate, and where the light adjusting layer is configured to implement interference cancellation.
On the other hand, the embodiment of the application also provides a preparation method of the display substrate, which is characterized in that the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, and the preparation method comprises the following steps:
at least one marking structure is formed on a substrate of a marking area of the peripheral area, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in the direction parallel to the substrate, and the light adjusting layer is used for achieving interference cancellation.
According to the embodiment of the application, the distance between the edge, adjacent to the marking layer, of the light adjusting layer and the edge, adjacent to the light adjusting layer, of the marking layer is in the preset range, the optical path difference of light rays emitted to the marking area after being reflected can be changed, interference cancellation is achieved, diffraction problems caused by reflection of the marking area are relieved by the aid of the interference principle, and the identification capacity of the marking is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate and do not limit the invention.
FIG. 1a is a schematic diagram of a register file generating reflected light;
FIG. 1b is a schematic diagram of a poor product;
FIG. 2a is a Point Spread Function (PSF) without diffraction;
FIG. 2b shows PSF with diffraction;
FIG. 3a is an imaging simulation without diffraction;
FIG. 3b is an imaging simulation with diffraction;
FIG. 4a is a partial top view of a peripheral region of a display substrate according to an embodiment of the disclosure;
FIG. 4b is a cross-sectional view taken along line A-A of FIG. 4 a;
FIG. 5 is a schematic diagram of the interference principle;
FIG. 6a is a graph of contrast of the energy of the in-loop diffraction before and after use of an embodiment of the present disclosure;
FIG. 6b is a graph comparing meridian resolution before and after use of embodiments of the present disclosure;
FIG. 6c is a graph comparing the resolution of the arc surface before and after using the embodiments of the present disclosure;
FIG. 6d is a simulated contrast plot of mark imaging before and after employing an embodiment of the present disclosure;
FIG. 7a is a partial top view of a peripheral region of a display substrate according to another embodiment of the present disclosure;
FIG. 7b is a cross-sectional view taken along line A-A of FIG. 7 a;
FIG. 8a is a partial top view of a peripheral region of a display substrate according to another embodiment of the present disclosure;
FIG. 8b is a cross-sectional view taken along line A-A of FIG. 8 a;
FIG. 8c is a partial top view of a peripheral region of another display substrate according to an embodiment of the disclosure;
FIG. 8d is a partial top view of a peripheral region of another display substrate according to an embodiment of the disclosure;
FIG. 8e is a partial top view of a peripheral region of another display substrate according to an embodiment of the disclosure;
fig. 9a is a partial top view of a peripheral region of a display substrate according to another embodiment of the disclosure.
FIG. 9b is a cross-sectional view taken along line A-A of FIG. 9 a;
fig. 10 is a partial top view of a peripheral region of a display substrate according to another embodiment of the disclosure.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments and features of the embodiments in this application may be combined with each other arbitrarily to get new embodiments without conflict.
The steps illustrated in the flowchart of the figures may be performed in a computer system, such as a set of computer-executable instructions. Also, while a logical order is depicted in the flowchart, in some cases, the steps depicted or described may be performed in a different order than presented herein.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs.
In the drawings, the size of each constituent element, the thickness of a layer, or a region may be exaggerated for clarity. Accordingly, embodiments of the present disclosure are not necessarily limited to this size, and the shapes and sizes of the various components in the drawings do not reflect actual proportions. Furthermore, the drawings schematically show ideal examples, and the embodiments of the present disclosure are not limited to the shapes or the numerical values shown in the drawings.
The ordinal numbers of "first", "second", "third", etc. in the present disclosure are provided to avoid intermixing of constituent elements, and do not denote any order, quantity, or importance.
In the present disclosure, for convenience, terms such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like are used to describe positional relationships of the constituent elements with reference to the drawings, only for convenience in describing the present specification and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which the respective constituent elements are described. Therefore, the present invention is not limited to the words described in the disclosure, and may be replaced as appropriate. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In this disclosure, the terms "mounted," "connected," and "connected" are to be construed broadly, unless otherwise specifically indicated and defined. For example, it may be a fixed connection, a removable connection, or an integral connection; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intermediate members, or may be in communication with the interior of two elements. The specific meaning of the terms in this disclosure will be understood by those of ordinary skill in the art in the specific context.
In the present disclosure, "parallel" refers to a state in which two straight lines form an angle of-10 ° or more and 10 ° or less, and thus, a state in which the angle is-5 ° or more and 5 ° or less is also included. The term "perpendicular" refers to a state in which the angle formed by two straight lines is 80 ° or more and 100 ° or less, and thus includes a state in which the angle is 85 ° or more and 95 ° or less.
In this disclosure, "film" and "layer" may be interchanged. For example, the "conductive layer" may be sometimes replaced with a "conductive film". In the same manner, the "insulating film" may be replaced with the "insulating layer" in some cases.
The drawings of the embodiments of the present invention relate only to the structures related to the embodiments of the present invention, and other structures may refer to the general designs.
The applicant found that when identifying the alignment mark, the alignment bar (alignment Sheet) generates reflected light, which results in a decrease in the recognition degree of the mark (mark) edge, and further, the mark image is blurred, the boundary is not obvious, and the mark cannot be identified, thereby causing a bad product, as shown in fig. 1. It was found by analysis that this was due to diffraction of the reflected light at the edges of the marks, resulting in a reduced resolution, thus blurring the edges, and simulation results are shown in fig. 2 and 3.
In order to reduce diffraction at an edge of a mark, increase mark imaging definition, and improve alignment capability, embodiments of the present disclosure provide a display substrate including a display region and a peripheral region, the peripheral region including a mark region including at least one mark structure disposed on a substrate, the mark structure including a light adjusting layer and a mark layer, a distance between an edge of the light adjusting layer adjacent to the mark layer and an edge of the mark layer adjacent to the light adjusting layer being within a preset range in a direction parallel to the substrate, the light adjusting layer for achieving interference cancellation.
By setting the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer in a preset range, the optical path difference of the light reflected towards the marking area can be changed, interference cancellation is realized, diffraction at the edge of the marking is further reduced, namely, the diffraction problem caused by reflection of the alignment mark is relieved by utilizing the interference principle, and the identification capacity of the alignment mark is improved.
In an exemplary embodiment, the distance between the edge of the light-modifying layer adjacent to the marking layer and the edge of the marking layer adjacent to the light-modifying layer in a direction parallel to the substrate is 1-10um (micrometers). By setting the distance between the edges, a good interference cancellation effect can be obtained.
In an exemplary embodiment, the light-adjusting layer includes a first functional layer and a second functional layer disposed in a direction away from the substrate, the first functional layer having a thickness of 300nm to 350nm, and the second functional layer having a thickness of 200nm to 250nm.
For example, the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 200nm. Alternatively, the thickness of the first functional layer is 350nm, and the thickness of the second functional layer is 200nm. Alternatively, the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 250nm.
In an exemplary embodiment, the material of the first functional layer is silicon nitride (SiNx), and the material of the second functional layer is silicon oxide (SiOx), such as silicon dioxide (SiO 2).
In an exemplary embodiment, in the marking area, the marking layer is disposed on a side of the light-adjusting layer remote from the substrate, and the orthographic projection of the light-adjusting layer on the substrate includes orthographic projection of the marking layer on the substrate, and a distance between an edge of the light-adjusting layer adjacent to the marking layer and an edge of the marking layer adjacent to the light-adjusting layer in a direction parallel to the substrate is 1-10um. The optical path difference of light reflection can be adjusted by setting the distance between the edge of the light adjusting layer and the edge of the marking layer.
In an exemplary embodiment, in the marking area, the light adjusting layer is provided with an opening, the marking layer is disposed in the opening of the light adjusting layer, the orthographic projection of the light adjusting layer on the substrate and the orthographic projection of the marking layer on the substrate do not overlap, and in a direction parallel to the substrate, a distance between an edge of the light adjusting layer adjacent to the marking layer and an edge of the marking layer adjacent to the light adjusting layer is 1-10um. The optical path difference of light reflection can be adjusted by setting the distance between the edge of the light adjusting layer and the edge of the marking layer.
In an exemplary embodiment, in the marking area, the marking layer is disposed on a side of the light adjusting layer away from the substrate, and in a direction parallel to the substrate, the light adjusting layer is in a grating structure, that is, the light adjusting layer includes a plurality of strip-shaped sub-adjusting layers disposed at intervals, the strip-shaped sub-adjusting layers extend along a first direction, or the sub-adjusting layers extend along a second direction, and in a direction perpendicular to the substrate, a distance between two adjacent sub-adjusting layers is 0.5-5um. In an exemplary embodiment, the width of the strip-shaped sub-adjustment layer is 0.5-5um. The light-modifying layer below (i.e., in the direction proximate to the substrate) the marking layer may remain in the direction perpendicular to the substrate or may be removed. Interference cancellation can be enhanced by providing a grating structure, and diffraction can be reduced.
In an exemplary embodiment, in the marking area, the light-adjusting layer includes an opening area in which the light-adjusting layer is provided with an opening, and a non-opening area in which the marking layer is disposed in the opening of the light-adjusting layer, and an orthographic projection of the light-adjusting layer on the substrate does not overlap with an orthographic projection of the marking layer on the substrate, and in a direction parallel to the substrate, a distance between an edge of the light-adjusting layer adjacent to the marking layer and an edge of the marking layer adjacent to the light-adjusting layer is 1-10um, and in the non-opening area, the light-adjusting layer is in a grating structure.
For example, in the non-opening area, the light adjusting layer includes a plurality of strip-shaped sub-adjusting layers arranged at intervals, the strip-shaped sub-adjusting layers extend along a first direction, or the sub-adjusting layers extend along a second direction, and in a direction perpendicular to the substrate, a distance between two adjacent sub-adjusting layers is 0.5-5um. In an exemplary embodiment, the width of the strip-shaped sub-adjustment layer is 0.5-5um. The first direction intersects (e.g., is perpendicular to) the second direction.
For another example, in the non-opening region, in a direction parallel to the substrate, the light adjustment layer includes a first sub-region, a second sub-region, a third sub-region and a fourth sub-region, each of which has a projection shape of isosceles triangle with rectangular grooves on top, the top of the first sub-region is opposite to the top of the third sub-region, the top of the second sub-region is opposite to the top of the fourth sub-region, the first waist of the first sub-region is adjacent to the second waist of the fourth sub-region, the second waist of the first sub-region is adjacent to the first waist of the second sub-region, the second waist of the third sub-region is adjacent to the first waist of the fourth sub-region, and each sub-region includes a plurality of stripe sub-adjustment layers therein, and the extending direction of the stripe sub-adjustment layers in each sub-region is different from the extending direction of the stripe sub-adjustment layers in the adjacent sub-regions.
For another example, in the non-opening region, the light adjusting layer includes a first sub-region, a second sub-region, a third sub-region and a fourth sub-region in a direction parallel to the substrate, each sub-region has an isosceles trapezoid shape in orthographic projection, an upper bottom of the first sub-region is opposite to an upper bottom of the third sub-region, an upper bottom of the second sub-region is opposite to an upper bottom of the fourth sub-region, a first waist of the first sub-region is adjacent to a second waist of the fourth sub-region, a second waist of the first sub-region is adjacent to a first waist of the second sub-region, a second waist of the third sub-region is adjacent to a first waist of the fourth sub-region, and each sub-region includes a plurality of stripe sub-adjusting layers therein, and an extending direction of the stripe sub-adjusting layers in each sub-region is different from an extending direction of the stripe sub-adjusting layers in the adjacent sub-regions.
In an exemplary embodiment, the shape of the orthographic projection of the marking area on the substrate is the same as or different from the shape of the orthographic projection of the marking layer on the substrate, for example, the shape of the orthographic projection of the marking area on the substrate is square, and the shape of the orthographic projection of the marking layer on the substrate is square; or the shape of the orthographic projection of the marking area on the substrate is square, and the shape of the orthographic projection of the marking layer on the substrate is "+"; or the shape of the orthographic projection of the marking area on the substrate is square.
In an exemplary embodiment, the marking region further includes a composite insulating layer disposed on a side of the marking structure layer proximate to the substrate and a planar layer on a side of the marking structure layer distal from the substrate.
Fig. 4a is a partial top view of a peripheral region of a display substrate according to an embodiment of the disclosure, and fig. 4b is a cross-sectional view taken along A-A in fig. 4 a. In the parallel base direction, the display substrate includes a Mark region M, which is a region containing a Mark (Mark), and a non-Mark region N, which is a region other than the Mark region. In the marking area, the display substrate includes a substrate 10, a composite insulating layer 12, a marking structure layer 14 and a flat layer (PLN) 16 sequentially disposed, where the marking structure layer includes a light adjusting layer 141 and a marking layer 142, and in this embodiment, the marking layer 142 is disposed on a side of the light adjusting layer 141 away from the substrate, or the light adjusting layer 141 is disposed on a side of the marking layer 142 near the substrate, and the orthographic projection of the light adjusting layer 141 on the substrate includes the orthographic projection of the marking layer 142 on the substrate.
In an exemplary embodiment, the distance S1 between the edge of the light-adjusting layer 141 adjacent to the marking layer 142 and the edge of the marking layer 142 adjacent to the light-adjusting layer 141 is 1-10um micrometers (um) parallel to the substrate direction.
In an exemplary embodiment, the light-adjusting layer may be a single layer or a multi-layer structure, and the light-adjusting layer may be made of a silicon nitride (SiNx) and/or silicon oxide (SiO 2) material.
According to the interference principle, the formula for interference constructive and destructive is as follows:
where Δl is the optical path difference, e is the thickness of the incident layer, n' is the refractive index of the air layer, n is the refractive index of the incident layer, λ is the wavelength of light, i is the angle of incidence, and K is the number of interference orders.
Fig. 5 is a schematic diagram of the interference principle, where the distance between the first surface and the second surface is D, the refractive index of the medium 1 between the first surface and the second surface is n1, the refractive index of the medium 2 above the second surface is n2, the light ray a directed to the second surface reflects the light ray D on the second surface, and at the same time, the light ray a refracts on the second surface to emit the light ray C from the second surface through the medium 1, and when the optical path between the light ray C and the light ray D is an integer multiple of the light ray wavelength, the light ray interference is constructive, and when the optical path is an integer multiple of the light ray wavelength 1/2, the light ray interference is destructive.
Taking the multilayer structure in which the light adjustment layer includes SiNx and SiO2 as an example, siNx may be a first functional layer, siO2 may be a second functional layer, or SiNx may be a second functional layer, and SiO2 may be a first functional layer. At the junction of the edge of the light adjusting layer and the PLN layer, the optical path difference L after light reflection is:
L＝[n1*d1+n2*d2-n3*(d1+d2)]*2
the refractive index n1= 1.903 of SiNx in the light-modifying layer, the thickness d1=300 nm (nanometers), the refractive index n2= 1.924 of SiO2 in the light-modifying layer, the thickness d2=200 nm, the refractive index n3=1.658 of the PLN layer. Since the reflected light passes back and forth twice through the film, the path is multiplied by 2.
The optical path difference is L=253.4nm, which is close to half wavelength 275nm, so that interference cancellation can be realized, and diffraction can be reduced.
In an exemplary embodiment, the thicknesses of SiNx and SiO2 may be adjusted, for example, the thickness d1=350 nm of SiNx and the thickness d2=200 nm of SiO2 is adjusted, and the optical path difference L is 277.9nm. In another exemplary embodiment, if the thickness d1=300 nm of SiNx and d2=250 nm of sio2 are adjusted, the optical path difference L is 280nm, and almost complete interference cancellation can be achieved.
The above is merely an example, and the thickness of the light adjustment layer may be set according to the refractive index of the material of the light adjustment layer selected, as long as the optical path difference is ensured to be an integer multiple of half wavelength.
The technical scheme of this embodiment will be described below by the process of preparing a display substrate master of this embodiment. The "patterning process" referred to in this disclosure includes deposition of a film, coating of photoresist, mask exposure, development, etching, and stripping of photoresist. The deposition can be any one or more of sputtering, evaporation and chemical vapor deposition, the coating can be any one or more of spraying and spin coating, and the etching can be any one or more of dry etching and wet etching. "film" refers to a layer of film made by depositing or coating a material onto a substrate. The "thin film" may also be referred to as a "layer" if the "thin film" does not require a patterning process throughout the fabrication process. If the "thin film" requires a patterning process throughout the fabrication process, it is referred to as a "thin film" before the patterning process, and as a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern". The phrase "a and B are co-layer disposed" in this disclosure means that a and B are formed simultaneously by the same patterning process.
The preparation process of the display substrate target provided in this embodiment includes:
(1) And forming a substrate pattern, wherein the substrate can comprise a first substrate and a buffer layer which are sequentially arranged. Forming the base pattern includes: a layer of flexible material is coated on a glass carrier plate, and is solidified into a film to form a first substrate. And depositing a buffer film on the first substrate to form a buffer layer pattern covering the whole first substrate. The flexible material can be polyimide PI, polyethylene terephthalate PET or a polymer soft film subjected to surface treatment, and the like, so as to form a flexible substrate. The buffer film may be made of silicon nitride SiNx, silicon oxide SiOx, or the like, and may have a single layer or a multilayer structure of silicon nitride/silicon oxide. The substrate may be other types of substrates, such as silicon-based substrates, and the like, for example, as examples only.
(2) Forming a composite insulating layer and a marking structure
Preparing an active layer on a substrate of each sub-pixel through a patterning process, then forming a first insulating layer (or called a first gate insulating layer) covering the active layer, forming a gate line, a gate electrode and a first capacitance electrode on the first insulating layer of each sub-pixel, then forming a second insulating layer (or called a second gate insulating layer) covering the gate line and the gate electrode, forming a second capacitance electrode on the second insulating layer of each sub-pixel, forming a third insulating layer covering the second capacitance electrode, forming a data line, a source electrode and a drain electrode on the third insulating layer, forming a fourth insulating layer covering the data line, the source electrode and the drain electrode, wherein the gate electrode, the active layer, the source electrode and the drain electrode form a thin film transistor, and the first capacitance electrode and the second capacitance electrode form a storage capacitance; the first insulating layer and the second insulating layer are composite insulating layers.
In the peripheral area, the composite insulating layer 12 is formed on the substrate, the light adjusting layer pattern may be formed on the composite insulating layer while the third insulating layer is formed, and the mark layer pattern is formed on the light adjusting layer while the source electrode and the drain electrode are formed, that is, the source electrode, the drain electrode and the mark may be formed by a one-time patterning process, and the orthographic projection of the functional layer on the substrate includes the orthographic projection of the mark layer on the substrate. The light-adjusting layer and the marking layer form a marking structure.
In this embodiment, any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON) may be used as the first insulating layer, the second insulating layer, and the third insulating layer, and a single-layer structure or a multi-layer composite structure may be used. The gate electrode, the source electrode, the drain electrode, the capacitor electrode, and the marking layer may be made of any one or more of silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), may be a single-layer structure, or a multi-layer composite structure, such as Mo/Cu/Mo, or may be indium tin oxide ITO or indium zinc oxide IZO, or the like.
(3) Forming a flat layer
A Planarization (PLN) layer is formed to cover the entire substrate by applying a planarization film on the substrate on which the aforementioned pattern is formed through masking, exposing, and developing processes.
FIGS. 6a-d are simulation results of this example, as can be seen from the energy of the in-circle diffraction (FIG. 6 a), the improved diffraction is reduced; from the modulation transfer function, the improved resolution (fig. 6b and 6 c) is improved; as is evident from the imaging simulation (fig. 6 d), the improved mark imaging sharpness is improved.
FIG. 7a is a partial top view of a peripheral region of a display substrate according to another embodiment of the present disclosure; fig. 7b is a cross-sectional view taken along line A-A of fig. 7 a. In the parallel substrate direction, the display substrate includes a marking region M and a non-marking region N, in the marking region, the display substrate includes a substrate 10, a composite insulating layer 12, a marking structure layer 14 and a flat layer (PLN) 16 sequentially disposed, wherein the marking structure layer includes a light adjustment layer 141 and a marking layer 142, unlike the embodiment of fig. 4, in this embodiment, the light adjustment layer 141 is provided with an opening, the marking layer 142 is disposed in the opening of the light adjustment layer 141, the front projection of the light adjustment layer 141 on the substrate does not overlap with the front projection of the marking layer 142 on the substrate, and in the direction parallel to the substrate, a distance S2 between an edge of the light adjustment layer 142 adjacent to the marking layer and an edge of the marking layer 142 adjacent to the light adjustment layer 141 is 1-10um.
In this embodiment, the light adjustment layer may include a first functional layer and a second functional layer, the first functional layer may be SiNx and may have a thickness of 300nm to 350nm, and the second functional layer may be SiOx (e.g., siO 2) and may have a thickness of 200nm to 250nm.
The manufacturing process of the display substrate in this embodiment is similar to that of the display substrate in the embodiment shown in fig. 4, except that the light modulation layer pattern formed has an opening when the marker structure is formed, the marker layer pattern is formed in the opening of the light modulation layer, and the distance between the edge of the light modulation layer adjacent to the marker layer and the edge of the marker layer adjacent to the light modulation layer in the direction parallel to the base is 1-10um.
FIG. 8a is a partial top view of a peripheral region of a display substrate according to yet another embodiment of the present disclosure; fig. 8b is a cross-sectional view taken along line A-A of fig. 8 a. In the parallel substrate direction, the display substrate includes a marking area M and a non-marking area N, in the marking area, the display substrate includes a substrate 10, a composite insulating layer 12, a marking structure layer 14 and a flat layer (PLN) 16 sequentially disposed, where the marking structure layer includes a light adjusting layer 141 and a marking layer 142, unlike the embodiment of fig. 4, in this embodiment, the light adjusting layer 141 adopts a grating structure, that is, the light adjusting layer includes a plurality of stripe-shaped sub-adjusting layers 1411 disposed at intervals, the stripe-shaped sub-adjusting layers extend along the first direction, and a distance S3 between two adjacent stripe-shaped sub-adjusting layers is 0.5 um to 5um. In an exemplary embodiment, the width S4 of the cross section of the sub-adjustment layer is 0.5-5um. In other embodiments, the strip-shaped sub-adjustment layer may extend in the second direction, as shown in fig. 8 c. In the above embodiment, the marking area is exemplified by a square, and in other embodiments, the shape of the marking area may be the same as that of the marking, as shown in fig. 8d and 8e, in fig. 8d, the strip-shaped sub-adjustment layer extends along the first direction, and in fig. 8e, the strip-shaped sub-adjustment layer extends along the second direction. In the above embodiment, the stripe sub-adjustment layer may be disposed adjacent to the edge of the marking layer in the vertical substrate direction, or may be disposed with a gap (gap) from the edge of the marking layer, and the gap width is S3.
In this embodiment, the light adjustment layer may include a first functional layer and a second functional layer, the first functional layer may be SiNx and may have a thickness of 300nm to 350nm, and the second functional layer may be SiOx (e.g., siO 2) and may have a thickness of 200nm to 250nm.
The process for preparing the display substrate in this embodiment is similar to that of the embodiment shown in fig. 4, except that the light modulation layer pattern formed is a grating structure.
FIG. 9a is a partial top view of a peripheral region of a display substrate according to yet another embodiment of the present disclosure; fig. 9b is a cross-sectional view taken along line A-A of fig. 9 a. In this embodiment, the light adjustment layer 141 includes an opening area and a non-opening area, in the opening area, the light adjustment layer 141 is provided with an opening, the marking layer 142 is disposed in the opening of the light adjustment layer 141, the orthographic projection of the light adjustment layer 141 on the substrate does not overlap with the orthographic projection of the marking layer 142 on the substrate, in the direction parallel to the substrate, the distance between the edge of the light adjustment layer 141 adjacent to the marking layer 142 and the edge of the marking layer 142 adjacent to the light adjustment layer 141 is 1-10um, and in the non-opening area, the light adjustment layer 141 is in a grating structure. In the non-opening area, the light adjusting layer comprises a plurality of strip-shaped sub-adjusting layers which are arranged at intervals, the strip-shaped sub-adjusting layers extend along a first direction or extend along a second direction, the distance S3 between two adjacent strip-shaped sub-adjusting layers is 0.5-5um in the direction perpendicular to the substrate, and the width S4 of the cross section of the strip-shaped sub-adjusting layers is 0.5-5um. In an exemplary embodiment, the stripe sub-adjustment layer may be disposed adjacent to the edge of the marking layer in a vertical substrate direction, or the stripe sub-adjustment layer may be disposed with a gap (gap) from the edge of the marking layer, and the gap width may be S3.
Fig. 10 is a partial top view of a peripheral region of a display substrate according to still another embodiment of the present disclosure, in which the light adjustment layer 141 has a grating structure, and in this embodiment, the light adjustment layer is provided with an opening, and the marking layer is disposed in the opening of the light adjustment layer.
As shown in the example of fig. 10, for example, when the mark is "+" shaped, in the non-opening area, in the direction parallel to the substrate, the light adjustment layer includes a first sub-area M11, a second sub-area M12, a third sub-area M13 and a fourth sub-area M14, each of which has a projection shape on the substrate that is isosceles triangle with a rectangular groove on top, the top of the first sub-area M11 is opposite to the top of the third sub-area M13, the top of the second sub-area M12 is opposite to the top of the fourth sub-area M14, the first waist of the first sub-area M11 is adjacent to the second waist of the fourth sub-area M14, the second waist of the first sub-area M11 is adjacent to the first waist of the second sub-area M12, the second waist of the second sub-area M13 is adjacent to the first waist of the third sub-area M13, the second waist of the third sub-area M13 is adjacent to the first waist of the fourth sub-area M14, each sub-area M11 includes a plurality of strip-shaped adjustment layers, and the strip-shaped adjustment layers in each sub-area extends in the direction in the adjacent sub-area. For example, the extending direction of the sub-adjustment layer in the first sub-area M11 is the first direction, the extending direction of the sub-adjustment layer in the second sub-area M12 adjacent to the first sub-area M11 is the second direction, the extending direction of the sub-adjustment layer in the third sub-area M13 adjacent to the second sub-area M12 is the first direction, and the extending direction of the sub-adjustment layer in the fourth sub-area M14 adjacent to the third sub-area M13 is the second direction.
As shown in the example of fig. 10, for example, when the mark is square or rectangular, in the non-opening area, in a direction parallel to the substrate, the light adjustment layer includes a first sub-area M21, a second sub-area M22, a third sub-area M23 and a fourth sub-area M24, each of which is in the shape of isosceles trapezoid in orthographic projection on the substrate, the upper bottom of the first sub-area M21 is opposite to the upper bottom of the third sub-area M23, the upper bottom of the second sub-area M22 is opposite to the upper bottom of the fourth sub-area M24, the first waist of the first sub-area M21 is adjacent to the second waist of the fourth sub-area M24, the second waist of the first sub-area M21 is adjacent to the first waist of the second sub-area M22, the second waist of the second sub-area M22 is adjacent to the first waist of the third sub-area M23, the second waist of the third sub-area M23 is adjacent to the first waist of the fourth sub-area M24, each sub-area includes a plurality of stripe-shaped adjustment layers, and the direction of the stripe-shaped adjustment layers in each sub-area is different from the extending direction of the adjacent stripe-shaped adjustment layers. For example, the extending direction of the sub-adjustment layer in the first sub-area M21 is the first direction, the extending direction of the sub-adjustment layer in the second sub-area M22 adjacent to the first sub-area M21 is the second direction, the extending direction of the sub-adjustment layer in the third sub-area M23 adjacent to the second sub-area M22 is the first direction, and the extending direction of the sub-adjustment layer in the fourth sub-area M24 adjacent to the third sub-area M23 is the second direction.
The embodiment of the disclosure also provides a preparation method of the display substrate, the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, and the preparation method comprises the following steps:
at least one marking structure is formed on a substrate of a marking area of the peripheral area, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in the direction parallel to the substrate, and the light adjusting layer is used for achieving interference cancellation.
Although the embodiments of the present invention are described above, the embodiments are only used for facilitating understanding of the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is to be determined by the appended claims.
Claims (24)
1. A display substrate, characterized in that the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, the marking area comprises at least one marking structure arranged on a base, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in a direction parallel to the base, and the light adjusting layer is used for realizing interference cancellation;
in the marking area, the light adjusting layer is provided with an opening, the marking layer is arranged in the opening of the light adjusting layer, the orthographic projection of the light adjusting layer on the substrate is not overlapped with the orthographic projection of the marking layer on the substrate, and the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is 1-10um in the direction parallel to the substrate.
2. The display substrate of claim 1, wherein the display substrate comprises a transparent substrate,
the light adjusting layer comprises a first functional layer and a second functional layer which are arranged along the direction far away from the substrate, wherein the thickness of the first functional layer is 300nm-350nm, and the thickness of the second functional layer is 200-250nm.
3. The display substrate according to claim 2, wherein,
the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 350nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 250nm.
4. The display substrate according to claim 2, wherein,
the material of the first functional layer is silicon nitride SiNx, and the material of the second functional layer is silicon oxide SiOx.
5. The display substrate of claim 1, wherein the display substrate comprises a transparent substrate,
the shape of the orthographic projection of the marking area on the substrate is the same as or different from the shape of the orthographic projection of the marking layer on the substrate.
6. The display substrate of claim 1, wherein the display substrate comprises a transparent substrate,
the marking area further comprises a composite insulating layer arranged on one side of the marking structure layer close to the substrate and a flat layer arranged on one side of the marking structure layer far away from the substrate.
7. A display substrate, characterized in that the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, the marking area comprises at least one marking structure arranged on a base, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in a direction parallel to the base, and the light adjusting layer is used for realizing interference cancellation;
in the marking area, the marking layer is arranged on one side of the light adjusting layer far away from the substrate, the light adjusting layer is in a grating structure in the direction parallel to the substrate, the light adjusting layer comprises a plurality of strip-shaped sub-adjusting layers arranged at intervals, the strip-shaped sub-adjusting layers extend along the first direction, and the distance between two adjacent strip-shaped sub-adjusting layers is 0.5-5um in the direction perpendicular to the substrate.
8. The display substrate of claim 7, wherein the display substrate comprises a transparent substrate,
the light adjusting layer comprises a first functional layer and a second functional layer which are arranged along the direction far away from the substrate, wherein the thickness of the first functional layer is 300nm-350nm, and the thickness of the second functional layer is 200-250nm.
9. The display substrate of claim 8, wherein the display substrate comprises a transparent substrate,
the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 350nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 250nm.
10. The display substrate of claim 8, wherein the display substrate comprises a transparent substrate,
the material of the first functional layer is silicon nitride SiNx, and the material of the second functional layer is silicon oxide SiOx.
11. The display substrate of claim 7, wherein the display substrate comprises a transparent substrate,
the shape of the orthographic projection of the marking area on the substrate is the same as or different from the shape of the orthographic projection of the marking layer on the substrate.
12. The display substrate of claim 7, wherein the display substrate comprises a transparent substrate,
the marking area further comprises a composite insulating layer arranged on one side of the marking structure layer close to the substrate and a flat layer arranged on one side of the marking structure layer far away from the substrate.
13. A display substrate, characterized in that the display substrate comprises a display area and a peripheral area, the peripheral area comprises a marking area, the marking area comprises at least one marking structure arranged on a base, the marking structure comprises a light adjusting layer and a marking layer, the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in a direction parallel to the base, and the light adjusting layer is used for realizing interference cancellation;
the light adjustment layer comprises an opening area and a non-opening area, wherein the opening area is internally provided with an opening, the marking layer is arranged in the opening of the light adjustment layer, the orthographic projection of the light adjustment layer on a substrate is not overlapped with the orthographic projection of the marking layer on the substrate, the distance between the edge of the light adjustment layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjustment layer is 1-10um in the direction parallel to the substrate, and the light adjustment layer is in a grating structure in the non-opening area.
14. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
in the non-opening area, the light adjusting layer comprises a plurality of strip-shaped sub-adjusting layers which are arranged at intervals, the strip-shaped sub-adjusting layers extend along a first direction, and the distance between two adjacent strip-shaped sub-adjusting layers is 0.5-5um in the direction perpendicular to the substrate.
15. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
in the non-opening area, in the direction parallel to the substrate, the light adjusting layer comprises a first subarea, a second subarea, a third subarea and a fourth subarea, the projection shape of each subarea on the substrate is isosceles triangle with rectangular grooves at the top, the top of the first subarea is opposite to the top of the third subarea, the top of the second subarea is opposite to the top of the fourth subarea, the first waist of the first subarea is adjacent to the second waist of the fourth subarea, the second waist of the first subarea is adjacent to the first waist of the second subarea, the second waist of the second subarea is adjacent to the first waist of the third subarea, each subarea comprises a plurality of strip-shaped sub-adjusting layers, and the extension direction of the strip-shaped sub-adjusting layers in each subarea is different from the extension direction of the strip-shaped sub-adjusting layers in the adjacent subareas.
16. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
in the non-opening region, in the direction parallel to the substrate, the light adjustment layer comprises a first sub-region, a second sub-region, a third sub-region and a fourth sub-region, the orthographic projection shape of each sub-region on the substrate is isosceles trapezoid, the upper bottom of the first sub-region is opposite to the upper bottom of the third sub-region, the upper bottom of the second sub-region is opposite to the upper bottom of the fourth sub-region, the first waist of the first sub-region is adjacent to the second waist of the fourth sub-region, the second waist of the first sub-region is adjacent to the first waist of the second sub-region, the second waist of the second sub-region is adjacent to the first waist of the third sub-region, the second waist of the third sub-region is adjacent to the first waist of the fourth sub-region, a plurality of strip-adjustment layers are included in each sub-region, and the extension direction of the strip-adjustment layers in each sub-region is different from the extension direction of the strip-adjustment layers in the adjacent sub-regions.
17. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
the light adjusting layer comprises a first functional layer and a second functional layer which are arranged along the direction far away from the substrate, wherein the thickness of the first functional layer is 300nm-350nm, and the thickness of the second functional layer is 200-250nm.
18. The display substrate of claim 17, wherein the display substrate comprises a transparent substrate,
the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 350nm, and the thickness of the second functional layer is 200nm; alternatively, the thickness of the first functional layer is 300nm, and the thickness of the second functional layer is 250nm.
19. The display substrate of claim 18, wherein the display substrate comprises a transparent substrate,
the material of the first functional layer is silicon nitride SiNx, and the material of the second functional layer is silicon oxide SiOx.
20. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
the shape of the orthographic projection of the marking area on the substrate is the same as or different from the shape of the orthographic projection of the marking layer on the substrate.
21. The display substrate of claim 13, wherein the display substrate comprises a transparent substrate,
the marking area further comprises a composite insulating layer arranged on one side of the marking structure layer close to the substrate and a flat layer arranged on one side of the marking structure layer far away from the substrate.
22. A method of manufacturing a display substrate, the display substrate comprising a display region and a peripheral region, the peripheral region comprising a marking region, the method comprising:
forming at least one marking structure on a substrate of a marking area of the peripheral area, wherein the marking structure comprises a light adjusting layer and a marking layer, and the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in the direction parallel to the substrate, and the light adjusting layer is used for realizing interference cancellation; in the marking area, the light adjusting layer is provided with an opening, the marking layer is arranged in the opening of the light adjusting layer, the orthographic projection of the light adjusting layer on the substrate is not overlapped with the orthographic projection of the marking layer on the substrate, and the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is 1-10um in the direction parallel to the substrate.
23. A method of manufacturing a display substrate, the display substrate comprising a display region and a peripheral region, the peripheral region comprising a marking region, the method comprising:
forming at least one marking structure on a substrate of a marking area of the peripheral area, wherein the marking structure comprises a light adjusting layer and a marking layer, and the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in the direction parallel to the substrate, and the light adjusting layer is used for realizing interference cancellation; in the marking area, the marking layer is arranged on one side of the light adjusting layer far away from the substrate, the light adjusting layer is in a grating structure in the direction parallel to the substrate, the light adjusting layer comprises a plurality of strip-shaped sub-adjusting layers arranged at intervals, the strip-shaped sub-adjusting layers extend along the first direction, and the distance between two adjacent strip-shaped sub-adjusting layers is 0.5-5um in the direction perpendicular to the substrate.
24. A method of manufacturing a display substrate, the display substrate comprising a display region and a peripheral region, the peripheral region comprising a marking region, the method comprising:
forming at least one marking structure on a substrate of a marking area of the peripheral area, wherein the marking structure comprises a light adjusting layer and a marking layer, and the distance between the edge of the light adjusting layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjusting layer is in a preset range in the direction parallel to the substrate, and the light adjusting layer is used for realizing interference cancellation; the light adjustment layer comprises an opening area and a non-opening area, wherein the opening area is internally provided with an opening, the marking layer is arranged in the opening of the light adjustment layer, the orthographic projection of the light adjustment layer on a substrate is not overlapped with the orthographic projection of the marking layer on the substrate, the distance between the edge of the light adjustment layer adjacent to the marking layer and the edge of the marking layer adjacent to the light adjustment layer is 1-10um in the direction parallel to the substrate, and the light adjustment layer is in a grating structure in the non-opening area.
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