CN113299681A - Light emitting device and display substrate - Google Patents

Light emitting device and display substrate Download PDF

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Publication number
CN113299681A
CN113299681A CN202110702909.1A CN202110702909A CN113299681A CN 113299681 A CN113299681 A CN 113299681A CN 202110702909 A CN202110702909 A CN 202110702909A CN 113299681 A CN113299681 A CN 113299681A
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China
Prior art keywords
light
substrate
layer
semiconductor layer
emitting
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孙双
彭宽军
张方振
陈婉芝
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

The invention relates to a light emitting device and a display substrate. The light emitting device includes: the at least one light emitting structure is in contact with a first heat conducting structure, the first heat conducting structure being configured to conduct away heat generated by the light emitting structure. According to the embodiment of the invention, the heat generated by the light-emitting structure can be conducted out in time through the first heat conduction structure, the heat dissipation speed of the light-emitting device can be increased, and the light-emitting efficiency of the light-emitting device is further improved.

Description

Light emitting device and display substrate
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device and a display substrate.
Background
In the related art, a heat effect is accompanied when a Light Emitting Diode (LED) emits light, and the heat effect causes a decrease in the light emitting efficiency of the LED. Therefore, how to improve the heat dissipation performance of the LED is a technical problem to be solved.
Disclosure of Invention
The invention provides a light emitting device and a display substrate to solve the disadvantages of the related art.
According to a first aspect of embodiments of the present invention, there is provided a light emitting device including: at least one light emitting structure and a first heat conducting structure in contact with each of the light emitting structures, the first heat conducting structure configured to conduct heat generated by the light emitting structure away.
In one embodiment, the light emitting device further comprises a substrate; the light emitting structure is positioned between the substrate and the first heat conducting structure;
the light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the substrate includes a non-light emitting region;
the first heat conduction structure is located on one side, far away from the light emitting layer, of the second semiconductor layer, and the orthographic projection of the first heat conduction structure on the substrate is located in the non-light emitting area.
In one embodiment, the first heat conducting structure comprises a heat conducting layer; the heat conduction layer is located on one side, far away from the light emitting layer, of the second semiconductor layer.
In one embodiment, the light emitting device further includes a first insulating layer and a reflective layer; the first insulating layer is positioned on one side of the heat conduction layer, which is far away from the second semiconductor layer, and the reflecting layer is positioned on one side of the first insulating layer, which is far away from the heat conduction layer;
the first heat conduction structure further comprises a first pad, the first pad is located on one side, away from the first insulating layer, of the reflecting layer, and the first pad is connected with the heat conduction layer through the via hole in the first insulating layer and the via hole in the reflecting layer.
In one embodiment, the light emitting device includes two light emitting structures, and the two light emitting structures are connected in series.
In one embodiment, the light emitting device further comprises a first electrode, a second electrode and a third electrode, wherein the two light emitting structures are connected in series through the first electrode;
the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode;
the second electrode is connected with the second semiconductor layer in the first light-emitting structure, and the third electrode is connected with the first semiconductor layer in the second light-emitting structure.
In one embodiment, the light emitting device further comprises a first conductive layer; the first conductive layer is positioned between the second light emitting structure and the first insulating layer;
the substrate further comprises a first light-emitting region adjacent to the non-light-emitting region; an orthographic projection of a part of the first conductive layer on the substrate is positioned in the first light-emitting area and is connected with the second semiconductor layer in the second light-emitting structure, and an orthographic projection of another part of the first conductive layer on the substrate is positioned in the non-light-emitting area and is connected with the second end of the first electrode.
In one embodiment, the light emitting device further includes a second insulating layer between the first light emitting structure and the second light emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate;
the orthographic projection of the second insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the second insulating layer is positioned on one side, away from the substrate, of the second semiconductor layer in the second light-emitting structure, and the second end of the second insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a first connecting part, the orthographic projection of the first connecting part on the substrate does not overlap with the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate, the first connecting part is positioned on one side close to the second light-emitting structure, and the first connecting part is connected with the first end of the first electrode.
In one embodiment, the light emitting device further comprises a second conductive layer; the second conductive layer is positioned between the first light-emitting structure and the first insulating layer;
the substrate further comprises a second light emitting region adjacent the non-light emitting region; an orthographic projection of one part of the second conducting layer on the substrate is positioned in the second light emitting area and connected with the second semiconductor layer in the first light emitting structure, and an orthographic projection of the other part of the second conducting layer on the substrate is positioned in the non-light emitting area and connected with the second electrode.
In one embodiment, the light emitting device further includes a third insulating layer between the second conductive layer and the first light emitting structure;
the orthographic projection of the third insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the third insulating layer is positioned on the side, away from the substrate, of the second semiconductor layer in the first light-emitting structure, and the second end of the third insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers of the first light-emitting structure except the first semiconductor layer on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a supporting part, the supporting part is positioned on one side far away from the second light-emitting structure, and the orthographic projection of the second electrode on the substrate is positioned in the orthographic projection of the supporting part on the substrate.
In one embodiment, an orthographic projection of the rest of the layers of the second light emitting structure except the first semiconductor layer on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer of the second light emitting structure comprises a second connecting part, and the orthographic projection of the second connecting part on the substrate and the orthographic projection of the rest of the layers of the second light emitting structure except the first semiconductor layer do not have a superposition part; the second connecting portion is located on one side far away from the first light emitting structure, and the second connecting portion is connected with the third electrode.
In one embodiment, the second electrode and the third electrode are located between the substrate and the first insulating layer;
the light-emitting device further comprises a second bonding pad and a third bonding pad, the second bonding pad is connected with the second electrode through the via hole in the first insulating layer and the via hole in the reflecting layer, and the third bonding pad is connected with the third electrode through the via hole in the first insulating layer and the via hole in the reflecting layer.
In one embodiment, the second insulating layer includes a hollowed-out portion through which the first electrode is in contact with the substrate.
In one embodiment, the thermal conductivity of the substrate is greater than the thermal conductivity of the second insulating layer.
In one embodiment, the light emitting device further includes a fourth pad connected to the first electrode through a via hole on the first insulating layer and a via hole on the reflective layer.
In one embodiment, the light emitting device includes two light emitting structures, the two light emitting structures being connected in series;
the light emitting device further includes a substrate; each light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the first thermally conductive structure comprises a first electrode; the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode; the first electrode is in contact with the substrate;
the substrate includes a non-light emitting region; the orthographic projection of the first electrode on the substrate is located in the non-light-emitting area.
In one embodiment, the light emitting device further comprises a first conductive layer; the first conducting layer is positioned on one side, far away from the substrate, of the second light-emitting structure;
the substrate further comprises a first light-emitting region adjacent to the non-light-emitting region; an orthographic projection of a part of the first conductive layer on the substrate is positioned in the first light-emitting area and is connected with the second semiconductor layer in the second light-emitting structure, and an orthographic projection of another part of the first conductive layer on the substrate is positioned in the non-light-emitting area and is connected with the second end of the first electrode.
In one embodiment, the light emitting device further includes a second insulating layer between the first light emitting structure and the second light emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate;
the orthographic projection of the second insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the second insulating layer is positioned on one side, away from the substrate, of the second semiconductor layer in the second light-emitting structure, and the second end of the second insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a first connecting part, the orthographic projection of the first connecting part on the substrate does not have an overlapped part with the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate, the first connecting part is positioned on one side close to the second light-emitting structure, and the first connecting part is connected with the first end of the first electrode;
the second insulating layer includes a hollow portion through which the first electrode is in contact with the substrate.
In one embodiment, the light emitting device includes two light emitting structures, the two light emitting structures being connected in series;
the light emitting device further comprises a substrate, a first insulating layer and a reflecting layer; each light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the first insulating layer is positioned on one side of the light-emitting structure far away from the substrate, and the reflecting layer is positioned on one side of the first insulating layer far away from the substrate;
the first heat conducting structure comprises a first electrode and a fourth bonding pad; the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode;
the substrate includes a non-light emitting region; the orthographic projection of the first electrode and the fourth bonding pad on the substrate is positioned in the non-luminous area; the fourth pad is connected with the first electrode through the via hole on the first insulating layer and the via hole on the reflecting layer.
According to a second aspect of embodiments of the present invention, there is provided a display substrate, including: driving the back plate and the light emitting device;
the driving back plate comprises a second heat conducting structure;
the first heat conducting structure of the light emitting device is in contact with the second heat conducting structure of the driving back plate.
According to the above embodiments, since the light emitting device further includes the first heat conducting structure in addition to the light emitting structure, the first heat conducting structure is in contact with each light emitting structure, and the first heat conducting structure is configured to conduct away heat generated by the light emitting structure, in this way, the heat generated by the light emitting structure can be conducted away in time through the first heat conducting structure, so that the heat dissipation speed of the light emitting device can be increased, and the light emitting efficiency of the light emitting device can be further improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic structural view of a light emitting device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of FIG. 1 along section line AA'.
Fig. 3 is a schematic structural view of another light emitting device according to an embodiment of the present invention.
Fig. 4 is a schematic structural view of a light emitting device according to an embodiment of the present invention.
Fig. 5 is a cross-sectional view of fig. 4 along section line AA'.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
In the related art, the light emitting area of a Light Emitting Diode (LED) is relatively large, and on the premise that the light emitting brightness is determined, the current required for driving the LED to emit light is also determined, and a large light emitting area tends to bring a small current density. When the LED operates at a small current density, the luminous efficiency of the LED is low.
The inventors have realized that in order to increase the luminous efficiency of an LED, the LED needs to be operated at a high current density, and that the light emitting area of the LED needs to be reduced.
However, if the LED is directly downsized, since the LED edge may have a sidewall effect, the sidewall effect still exists when the LED is downsized, and may cause the ratio of the failure region caused by the sidewall effect to rise conversely; in addition, the reduction of the light emitting area inevitably brings about the increase of the heat effect of the LED, and the heat effect can cause the reduction of the light emitting efficiency of the LED. Therefore, on the basis of the reduction of the light emitting area, how to avoid the negative effect of increasing the sidewall effect and improve the heat dissipation performance of the LED need to be considered.
In order to solve the above technical problems, embodiments of the present invention provide a light emitting device and a display substrate, which can increase the heat dissipation speed of the light emitting device, improve the heat dissipation performance of the light emitting device, and further improve the light emitting efficiency of the light emitting device.
As shown in fig. 1 and 2, an embodiment of the invention provides a light emitting device. Wherein, fig. 2 is a sectional view along the section line AA' of fig. 1. The light emitting device, as shown in fig. 1 to 2, includes at least one light emitting structure 11 and a first heat conducting structure 12, the first heat conducting structure 12 is in contact with each light emitting structure 11, and the first heat conducting structure 12 is configured to conduct heat generated by the light emitting structure 11 away.
In this embodiment, because the light emitting device includes a first heat conduction structure in addition to the light emitting structure, the first heat conduction structure contacts with each light emitting structure, and the first heat conduction structure is configured to conduct away the heat that the light emitting structure produced, like this, can in time conduct away the heat that the light emitting structure produced through first heat conduction structure, can increase the radiating rate of light emitting device, and then improve light emitting device's luminous efficacy.
The light emitting device provided by the embodiment of the present invention is briefly described above, and the following description is provided in detail.
The embodiment of the invention also provides a light-emitting device. The light emitting device, as shown in fig. 1 and 2, includes a substrate 13, two light emitting structures 11, a first heat conducting structure 12, a first electrode 14, a second electrode 15, a third electrode 16, a first conductive layer 17, a second conductive layer 18, a first insulating layer 19, a second insulating layer 21, a third insulating layer 22, a reflective layer 23, a second pad 24, and a third pad 25.
In the present embodiment, the material of the substrate 13 is sapphire. The main component of sapphire is alumina (Al2O 3). Of course, in other embodiments, the material of the substrate 13 may also be silicon carbide (SiC), gallium nitride (GaN), or silicon.
In the present embodiment, the thermal conductivity of the substrate 13 may be 40W/m.C, but is not limited thereto.
In the present embodiment, as shown in fig. 2, two light emitting structures 11 are located between the substrate 13 and the first heat conducting structure 12. Each of the light emitting structures 11 includes a first semiconductor layer 111, a superlattice layer 112, a first semiconductor layer 113, a light emitting layer 114, an electron blocking layer 115, and a second semiconductor layer 116. The first semiconductor layer 111 and the first semiconductor layer 113 are one of a P-type semiconductor layer and an N-type semiconductor layer, and the second semiconductor layer 116 is the other of the P-type semiconductor layer and the N-type semiconductor layer. In this embodiment, the first semiconductor layer 111 and the first semiconductor layer 113 are N-type semiconductor layers, and the second semiconductor layer 116 is P-type semiconductor layer.
In the present embodiment, the thermal conductivity of the first semiconductor layer 111 and the thermal conductivity of the first semiconductor layer 113 may be 130W/m.C. The thermal conductivity of the light emitting layer 114 may be 3.47 × 10-4W/m.C, the second semiconductor layer 116 may have a thermal conductivity of 130W/m.C.
In the present embodiment, as shown in fig. 2, the first semiconductor layer 111 is located on the substrate 13, the superlattice layer 112 is located on a side of the first semiconductor layer 111 away from the substrate 13, and the first semiconductor layer 113 is located on a side of the superlattice layer 112 away from the first semiconductor layer 111. The material of the superlattice layer 112 may be GaN or InGaN, but is not limited thereto. The superlattice layer 112 is configured to improve lattice matching between the first semiconductor layer 111 and the first semiconductor layer 113, and reduce or prevent propagation from the defective substrate 13, the first semiconductor layer 111, to the first semiconductor layer 113, so that dysfunction of the light emitting device can be avoided.
In the present embodiment, as shown in fig. 2, the light emitting layer 114 is located on a side of the first semiconductor layer 113 away from the substrate. The light emitting layer 114 may include a multiple quantum well structure. For example, the multi-quantum well structure may be a periodic structure in which GaN (gallium nitride) and InGaN (indium gallium nitride) are alternately arranged, but is not limited thereto.
In the present embodiment, as shown in fig. 2, the electron blocking layer 115 is located on the side of the light emitting layer 114 away from the first semiconductor layer 113, and the second semiconductor layer 116 is located on the side of the light emitting layer 114 away from the first semiconductor layer. The electron blocking layer 115 is configured to prevent electrons in the light emitting layer 114 from escaping to the second semiconductor layer 116, and can improve light emitting efficiency.
In the present embodiment, as shown in fig. 2, the two light emitting structures 11 include a first light emitting structure 11A and a second light emitting structure 11B. The first light emitting structure 11A and the second light emitting structure 11B are connected in series with the first electrode 14 through the first conductive layer 17. The light emission color of the first light emission structure 11A and the light emission color of the second light emission structure 11B may be the same.
In the present embodiment, as shown in fig. 1 and fig. 2, the substrate 13 includes a first light emitting region E1, a second light emitting region E2 and a non-light emitting region E3. The first light-emitting region E1 and the second light-emitting region E2 are adjacent to the non-light-emitting region E3, respectively. In the embodiment, the first light-emitting region E1 is a light-emitting region corresponding to the second light-emitting structure 11B, and the second light-emitting region E2 is a light-emitting region corresponding to the first light-emitting structure 11A. The area of the first light emitting region E1 is smaller than that of the second semiconductor layer 116 in the second light emitting structure 11B, and the area of the second light emitting region E2 is smaller than that of the second semiconductor layer 116 in the first light emitting structure 11A.
In the present embodiment, as shown in fig. 2, the second insulating layer 21 is located between the first light emitting structure 11A and the second light emitting structure 11B, between the first conductive layer 17 and the substrate 13, and between the first electrode 14 and the substrate 13.
In the present embodiment, as shown in fig. 2, an orthographic projection of the second insulating layer 21 on the substrate 13 is located in the non-light emitting region E3, and a first end of the second insulating layer 21 is located on a side of the second semiconductor layer 116 in the second light emitting structure 11B away from the substrate 13, and a second end is in contact with the first semiconductor layer 111 of the first light emitting structure 11A.
In the present embodiment, the thermal conductivity of the second insulating layer 21 may be 2.33W/m.C, but is not limited thereto.
In the present embodiment, as shown in fig. 2, the first conductive layer 17 is located on a side of the second light emitting structure 11B away from the substrate 13. An orthogonal projection of a portion of the first conductive layer 17 on the substrate 13 is located in the first light emitting region E1 and is connected to the second semiconductor layer 116 in the second light emitting structure 11B, and an orthogonal projection of another portion of the first conductive layer 17 on the substrate 13 is located in the non-light emitting region E3 and is connected to the second end of the first electrode 14.
In the present embodiment, the material of the first conductive layer 17 may be a transparent conductive material, for example, the material of the first conductive layer 17 may be ITO (indium tin oxide), but is not limited thereto.
In this embodiment, as shown in fig. 2, the area of the first conductive layer 17 contacting the second semiconductor layer 116 in the second light emitting structure 11B is smaller than the area of the second semiconductor layer 116 in the second light emitting structure 11B, so that the light emitting area of the second light emitting structure 11B can be reduced on the premise of avoiding reducing the size of the light emitting device, and the side wall effect is avoided.
In the present embodiment, as shown in fig. 2, the first semiconductor layer 111 of the first light emitting structure 11A is connected to a first end of the first electrode 14, and the second semiconductor layer 116 of the second light emitting structure 11B is connected to a second end of the first electrode 14 through the first conductive layer 17.
In the present embodiment, as shown in fig. 2, an orthographic projection of the remaining layers of the first light emitting structure 11A except the first semiconductor layer 111 on the substrate 13 is located within an orthographic projection of the first semiconductor layer 111 on the substrate 13, the first semiconductor layer 111 in the first light emitting structure 11A includes a first connection portion 1111, an orthographic projection of the first connection portion 1111 on the substrate 13 does not overlap with an orthographic projection of the remaining layers of the first light emitting structure 11A except the first semiconductor layer 111 on the substrate 13, the first connection portion 1111 is located on a side of the first semiconductor layer 111 close to the second light emitting structure 11B, and the first connection portion 1111 is connected to a first end of the first electrode 14.
In the present embodiment, as shown in fig. 2, the third insulating layer 22 is located between the second conductive layer 18 and the first light emitting structure 11A. An orthogonal projection of the third insulating layer 22 on the substrate 13 is located in the non-light emitting region E3, and a first end of the third insulating layer 22 is located on a side of the second semiconductor layer 116 in the first light emitting structure 11A away from the substrate 13, and a second end is in contact with the first semiconductor layer 111 of the first light emitting structure 11A.
In the present embodiment, the thermal conductivity of the third insulating layer 22 may be 2.33W/m.C, but is not limited thereto.
In the present embodiment, as shown in fig. 2, the second conductive layer 18 is located between the first light emitting structure 11A and the first insulating layer 19. An orthogonal projection of a part of the second conductive layer 18 on the substrate 13 is located in the second light emitting region E2 and connected to the second semiconductor layer 116 in the first light emitting structure 11A, and an orthogonal projection of another part of the second conductive layer 18 on the substrate 13 is located in the non-light emitting region E3 and connected to the second electrode 15.
In the present embodiment, the area of the second conductive layer 18 in contact with the second semiconductor layer 116 in the first light emitting structure 11A is smaller than the area of the second semiconductor layer 116, so that the light emitting area of the first light emitting structure 11A can be reduced without reducing the size of the light emitting device.
In the present embodiment, the material of the second conductive layer 18 may be a transparent conductive material, for example, the material of the second conductive layer 18 may be ITO (indium tin oxide), but is not limited thereto.
In the present embodiment, the thermal conductivity of the first conductive layer 17 and the second conductive layer 18 can be 6W/m.C, but is not limited thereto.
In the present embodiment, as shown in fig. 2, the second electrode 15 is connected to the second semiconductor layer 116 in the first light emitting structure 11A. The second electrode 15 is a positive electrode. The orthographic projection of the rest of the layers of the first light emitting structure 11A except the first semiconductor layer 111 on the substrate 13 is positioned in the orthographic projection of the first semiconductor layer 111 on the substrate 13, the first semiconductor layer 111 in the first light emitting structure 11A includes a support portion 1112, the support portion 1112 is positioned on the side of the first semiconductor layer 111 away from the second light emitting structure 11B, and the orthographic projection of the second electrode 15 on the substrate 13 is positioned in the orthographic projection of the support portion 1112 on the substrate 13.
In the present embodiment, as shown in fig. 2, the third electrode 16 is connected to the first semiconductor layer 111 in the second light emitting structure 11B. The third electrode 16 is a negative electrode. The orthographic projection of the rest of the layers of the second light emitting structure 11B except the first semiconductor layer 111 on the substrate 13 is located within the orthographic projection of the first semiconductor layer 111 on the substrate 13, the first semiconductor layer 111 of the second light emitting structure 11B includes the second connecting portion 1113, and the orthographic projection of the second connecting portion 1113 on the substrate 13 does not overlap with the orthographic projection of the rest of the layers of the second light emitting structure 11B except the first semiconductor layer 111 on the substrate 13. The second connection portion 1113 is located on a side of the first semiconductor layer 111 away from the first light emitting structure 11A, and the second connection portion 1113 is connected to the third electrode 16. An orthogonal projection of the third electrode 16 on the substrate 13 is located within an orthogonal projection of the second connection portion 1113 on the substrate 13.
In the present embodiment, as shown in fig. 1 and fig. 2, the first heat conducting structure 12 is in contact with the first light emitting structure 11A and the second light emitting structure 11B, respectively, and is located on a side of the second semiconductor layer 116 away from the light emitting layer 114, and an orthographic projection of the first heat conducting structure 12 on the substrate 13 is located in the non-light emitting region E3. The first heat conducting structure 12 is configured to conduct away heat generated by the first and second light emitting structures 11A and 11B.
In the present embodiment, as shown in fig. 1 and fig. 2, the first heat conducting structure 12 includes a heat conducting layer 121. The heat conducting layer 121 is located on a side of the second semiconductor layer 116 away from the light emitting layer 114 for conducting heat generated by the light emitting layer 114 away.
In this embodiment, the heat conductive layer 121 is made of a transparent conductive material, such as ITO, as the material of the first conductive layer 17 and the material of the second conductive layer 18. Thus, the light emitting efficiency of the light emitting device may not be affected. The heat conductive layer 121 may be formed in the same layer as the first conductive layer 17 and the second conductive layer 18, and may be formed by the same process. Thus, one patterning process can be saved, and the cost can be saved.
In the present embodiment, as shown in fig. 2, the first insulating layer 19 is located on a side of the heat conducting layer 121 away from the second semiconductor layer 116, and covers the substrate 13, the two light emitting structures 11, the first heat conducting structure 12, the first electrode 14, the second electrode 15, the third electrode 16, the first conductive layer 17, and the second conductive layer 18, and the first insulating layer 19 is used for protecting the two light emitting structures 11, the first heat conducting structure 12, the first electrode 14, the second electrode 15, the third electrode 16, the first conductive layer 17, and the second conductive layer 18.
In the present embodiment, the thermal conductivity of the first insulating layer 19 may be 2.33W/m.C, but is not limited thereto.
In this embodiment, as shown in fig. 2, the reflective layer 23 is located on the side of the first insulating layer 19 away from the heat conducting layer 121. The reflective layer 23 may be a bragg reflector, the reflective layer 23 may be formed by alternately arranging a high refractive index material and a low refractive index material, for example, the reflective layer 23 may include a plurality of layers of SiO alternately arranged2With TiO2But is not limited thereto.
In the present embodiment, the thermal conductivity of the reflective layer 23 may be 4.95W/m.C, but is not limited thereto.
In the present embodiment, as shown in fig. 1, the first heat conducting structure 12 further includes a first pad 122. The first pad 122 is located on a side of the reflective layer 23 away from the first insulating layer 19, and the first pad 122 is connected to the heat conductive layer 121 through the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23.
In this embodiment, as shown in fig. 1, the first heat conducting structure 12 further includes a first conducting portion 123, a portion of the first conducting portion 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflecting layer 23, and another portion is located on a side of the reflecting layer 23 away from the first insulating layer 19 and connected to the first pad 122, that is, the first pad 122 is connected to the heat conducting layer 121 through the first conducting portion 123. In this way, the first heat conducting structure 12 is able to conduct away heat generated by the light emitting structure 11.
In the present embodiment, as shown in fig. 1, the second pad 24 is connected to the second electrode 15 through the via hole on the first insulating layer 19 and the via hole 232 on the reflective layer 23.
In the present embodiment, as shown in fig. 1 and fig. 2, the light emitting device further includes a second conductive portion 26, a portion of the second conductive portion 26 is located in the via hole on the first insulating layer 19 and the via hole 232 on the reflective layer 23, and another portion is located on a side of the reflective layer 23 away from the first insulating layer 19 and connected to the second pad 24, that is, the second pad 24 is connected to the second electrode 15 through the second conductive portion 26. In this way, the second pad 24 can conduct away heat generated by the first light emitting structure 11A, improving heat dissipation performance of the light emitting device.
In the present embodiment, as shown in fig. 1, the third pad 25 is connected to the third electrode 16 through the via hole on the first insulating layer 19 and the via hole 233 on the reflective layer 23.
In the present embodiment, as shown in fig. 1 and fig. 2, the light emitting device further includes a third conductive portion 27, a portion of the third conductive portion 27 is located in the via hole on the first insulating layer 19 and the via hole 233 on the reflective layer 23, and another portion is located on a side of the reflective layer 23 away from the first insulating layer 19 and connected to the third pad 25, that is, the third pad 25 is connected to the third electrode 16 through the third conductive portion 27. In this way, the third pad 25 can conduct away heat generated by the second light emitting structure 11B, improving heat dissipation performance of the light emitting device.
In other embodiments, the light emitting device may further include a fourth pad. The fourth pad may be connected to the first electrode 14 through a via hole on the first insulating layer 19 and a via hole on the reflective layer 23, and the area of the fourth pad may be the same as that of the first pad 122. Therefore, the fourth bonding pad can conduct heat generated by the first light emitting structure 11A and the second light emitting structure 11B, so that a heat dissipation channel is increased, and the heat dissipation performance of the light emitting device can be improved.
In other embodiments, the second insulating layer 21 may include a hollow portion through which the first electrode 14 contacts the substrate 13. In this way, the first electrode 14 can conduct heat generated by the first light emitting structure 11A and the second light emitting structure 11B through the substrate 13, so as to increase a heat dissipation channel and a heat dissipation area, and improve heat dissipation performance of the light emitting device.
In other embodiments, the thermal conductivity of the substrate 13 is greater than the thermal conductivity of the second insulating layer 21. Thus, heat generated by the first light emitting structure 11A and the second light emitting structure 11B can be conducted out through the second insulating layer 21 and the substrate 13, and the heat dissipation performance of the light emitting device is improved.
In this embodiment, the heat conducting layer 121 is disposed on one side of the light emitting structure 11 away from the substrate, and the heat conducting layer 121 can conduct heat generated by the light emitting structure 11 through the first bonding pad 122, so as to improve heat dissipation performance of the light emitting device, and further improve light emitting efficiency of the light emitting device.
As shown in fig. 3, an embodiment of the present invention also proposes a light emitting device. As shown in fig. 3, unlike the above-mentioned embodiment, in the present embodiment, the first heat conducting structure 12 does not include the above-mentioned heat conducting layer 121, the first heat conducting structure 12 includes the above-mentioned first electrode 14, an orthographic projection of the first electrode 14 on the substrate 13 is located in the non-light emitting region E3, and the first electrode 14 is in contact with the substrate 13, so that the first electrode 14 can conduct away heat generated by the first light emitting structure 11A and the second light emitting structure 11B through the substrate 13, thereby improving the heat dissipation performance of the light emitting device.
In the present embodiment, as shown in fig. 3, the second insulating layer 21 includes a hollow portion, and the first electrode 14 is in contact with the substrate 13 through the hollow portion. In this way, the first electrode 14 can conduct heat generated by the first light emitting structure 11A and the second light emitting structure 11B through the substrate 13, thereby improving heat dissipation performance of the light emitting device.
In the present embodiment, the thermal conductivity of the substrate 13 is greater than that of the second insulating layer 21. Thus, heat generated by the first light emitting structure 11A and the second light emitting structure 11B can be conducted out through the second insulating layer 21 and the substrate 13, and the heat dissipation performance of the light emitting device is improved.
As shown in fig. 4 and 5, the embodiment of the invention also provides a light emitting device. Wherein, fig. 5 is a sectional view along the section line AA' of fig. 4. As shown in fig. 4 and fig. 5, unlike the above-mentioned embodiment, in the present embodiment, the first heat conducting structure 12 does not include the above-mentioned heat conducting layer 121, and the first heat conducting structure 12 includes the above-mentioned first electrode 14 and the fourth pad 41. An orthogonal projection of the first electrode 14 and the fourth pad 41 on the substrate 13 is located in the non-light-emitting region E3. The fourth pad 41 is connected to the first electrode 14 through the via hole on the first insulating layer 19 and the via hole 234 on the reflective layer 23.
In the present embodiment, the material of the fourth pad 41 is metal. The thermal conductivity of the fourth pad 41 is greater than that of the reflective layer 23, which increases the speed of heat dissipation and improves the heat dissipation performance of the light emitting device.
In the present embodiment, as shown in fig. 4, the area of the fourth pad 41 is larger than that of the first electrode 14, so that the heat dissipation area can be increased, and the heat dissipation performance of the light emitting device can be improved.
In the present embodiment, as shown in fig. 4 and 5, the light emitting device further includes a fourth conductive portion 42, a portion of the fourth conductive portion 42 is located in the via hole on the first insulating layer 19 and the via hole 234 on the reflective layer 23, and another portion is located on a side of the reflective layer 23 away from the first insulating layer 19 and connected to the fourth pad 41, that is, the fourth pad 41 is connected to the first electrode 14 through the fourth conductive portion 42. Thus, the fourth pad 41 can conduct heat generated by the first light emitting structure 11A and the second light emitting structure 11B, and improve heat dissipation performance of the light emitting device.
The embodiment of the invention also provides a display substrate which comprises a driving backboard and the light-emitting device of any one of the embodiments.
In this embodiment, the driving backplane comprises a second heat conducting structure, and the first heat conducting structure 12 of the light emitting device is in contact with the second heat conducting structure of the driving backplane. Therefore, heat generated by the light emitting device can be conducted to the driving back plate through the first heat conducting structure 12 and the second heat conducting structure, so that the heat dissipation performance of the light emitting device can be improved, and the light emitting efficiency of the light emitting device can be further improved.
In this embodiment, the material of the second heat conducting structure may be metal. For example, the second heat conducting structure may be a metal block. Therefore, the heat dissipation speed can be increased, and the heat dissipation performance of the light-emitting device can be improved.
It should be noted that the display substrate in this embodiment may be: any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (20)

1. A light emitting device, comprising: at least one light emitting structure and a first heat conducting structure in contact with each of the light emitting structures, the first heat conducting structure configured to conduct heat generated by the light emitting structure away.
2. The light-emitting device according to claim 1, further comprising a substrate; the light emitting structure is positioned between the substrate and the first heat conducting structure;
the light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the substrate includes a non-light emitting region;
the first heat conduction structure is located on one side, far away from the light emitting layer, of the second semiconductor layer, and the orthographic projection of the first heat conduction structure on the substrate is located in the non-light emitting area.
3. The light emitting device of claim 2, wherein the first heat conducting structure comprises a heat conducting layer; the heat conduction layer is located on one side, far away from the light emitting layer, of the second semiconductor layer.
4. The light-emitting device according to claim 3, further comprising a first insulating layer and a reflective layer; the first insulating layer is positioned on one side of the heat conduction layer, which is far away from the second semiconductor layer, and the reflecting layer is positioned on one side of the first insulating layer, which is far away from the heat conduction layer;
the first heat conduction structure further comprises a first pad, the first pad is located on one side, away from the first insulating layer, of the reflecting layer, and the first pad is connected with the heat conduction layer through the via hole in the first insulating layer and the via hole in the reflecting layer.
5. The light-emitting device according to claim 4, comprising two light-emitting structures, wherein the two light-emitting structures are connected in series.
6. The light-emitting device according to claim 5, further comprising a first electrode, a second electrode, and a third electrode, wherein the two light-emitting structures are connected in series through the first electrode;
the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode;
the second electrode is connected with the second semiconductor layer in the first light-emitting structure, and the third electrode is connected with the first semiconductor layer in the second light-emitting structure.
7. The light-emitting device according to claim 6, further comprising a first conductive layer; the first conductive layer is positioned between the second light emitting structure and the first insulating layer;
the substrate further comprises a first light-emitting region adjacent to the non-light-emitting region; an orthographic projection of a part of the first conductive layer on the substrate is positioned in the first light-emitting area and is connected with the second semiconductor layer in the second light-emitting structure, and an orthographic projection of another part of the first conductive layer on the substrate is positioned in the non-light-emitting area and is connected with the second end of the first electrode.
8. The light-emitting device according to claim 7, further comprising a second insulating layer between the first light-emitting structure and the second light-emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate;
the orthographic projection of the second insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the second insulating layer is positioned on one side, away from the substrate, of the second semiconductor layer in the second light-emitting structure, and the second end of the second insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a first connecting part, the orthographic projection of the first connecting part on the substrate does not overlap with the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate, the first connecting part is positioned on one side close to the second light-emitting structure, and the first connecting part is connected with the first end of the first electrode.
9. The light-emitting device according to claim 6, further comprising a second conductive layer; the second conductive layer is positioned between the first light-emitting structure and the first insulating layer;
the substrate further comprises a second light emitting region adjacent the non-light emitting region; an orthographic projection of one part of the second conducting layer on the substrate is positioned in the second light emitting area and connected with the second semiconductor layer in the first light emitting structure, and an orthographic projection of the other part of the second conducting layer on the substrate is positioned in the non-light emitting area and connected with the second electrode.
10. The light-emitting device according to claim 9, further comprising a third insulating layer between the second conductive layer and the first light-emitting structure;
the orthographic projection of the third insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the third insulating layer is positioned on the side, away from the substrate, of the second semiconductor layer in the first light-emitting structure, and the second end of the third insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers of the first light-emitting structure except the first semiconductor layer on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a supporting part, the supporting part is positioned on one side far away from the second light-emitting structure, and the orthographic projection of the second electrode on the substrate is positioned in the orthographic projection of the supporting part on the substrate.
11. The light-emitting device according to claim 6, wherein an orthogonal projection of the remaining layers of the second light-emitting structure except the first semiconductor layer on the substrate is located within an orthogonal projection of the first semiconductor layer on the substrate, wherein the first semiconductor layer of the second light-emitting structure includes a second connection portion, and wherein the orthogonal projection of the second connection portion on the substrate does not overlap with an orthogonal projection of the remaining layers of the second light-emitting structure except the first semiconductor layer on the substrate; the second connecting portion is located on one side far away from the first light emitting structure, and the second connecting portion is connected with the third electrode.
12. The light-emitting device according to claim 6, wherein the second electrode and the third electrode are located between the substrate and the first insulating layer;
the light-emitting device further comprises a second bonding pad and a third bonding pad, the second bonding pad is connected with the second electrode through the via hole in the first insulating layer and the via hole in the reflecting layer, and the third bonding pad is connected with the third electrode through the via hole in the first insulating layer and the via hole in the reflecting layer.
13. The light-emitting device according to claim 8, wherein the second insulating layer comprises a hollow portion, and wherein the first electrode is in contact with the substrate through the hollow portion.
14. The light-emitting device according to claim 8, wherein a thermal conductivity of the substrate is larger than a thermal conductivity of the second insulating layer.
15. The light-emitting device according to claim 6, further comprising a fourth pad connected to the first electrode through a via on the first insulating layer and a via on the reflective layer.
16. The light-emitting device according to claim 1, comprising two light-emitting structures, wherein the two light-emitting structures are connected in series;
the light emitting device further includes a substrate; each light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the first thermally conductive structure comprises a first electrode; the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode; the first electrode is in contact with the substrate;
the substrate includes a non-light emitting region; the orthographic projection of the first electrode on the substrate is located in the non-light-emitting area.
17. The light-emitting device according to claim 16, further comprising a first conductive layer; the first conducting layer is positioned on one side, far away from the substrate, of the second light-emitting structure;
the substrate further comprises a first light-emitting region adjacent to the non-light-emitting region; an orthographic projection of a part of the first conductive layer on the substrate is positioned in the first light-emitting area and is connected with the second semiconductor layer in the second light-emitting structure, and an orthographic projection of another part of the first conductive layer on the substrate is positioned in the non-light-emitting area and is connected with the second end of the first electrode.
18. The light-emitting device according to claim 17, further comprising a second insulating layer between the first light-emitting structure and the second light-emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate;
the orthographic projection of the second insulating layer on the substrate is positioned in the non-light-emitting area, the first end of the second insulating layer is positioned on one side, away from the substrate, of the second semiconductor layer in the second light-emitting structure, and the second end of the second insulating layer is in contact with the first semiconductor layer of the first light-emitting structure;
the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate is positioned in the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a first connecting part, the orthographic projection of the first connecting part on the substrate does not have an overlapped part with the orthographic projection of the rest layers except the first semiconductor layer in the first light-emitting structure on the substrate, the first connecting part is positioned on one side close to the second light-emitting structure, and the first connecting part is connected with the first end of the first electrode;
the second insulating layer includes a hollow portion through which the first electrode is in contact with the substrate.
19. The light-emitting device according to claim 1, comprising two light-emitting structures, wherein the two light-emitting structures are connected in series;
the light emitting device further comprises a substrate, a first insulating layer and a reflecting layer; each light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; the first semiconductor layer is positioned on the substrate, the light-emitting layer is positioned on one side of the first semiconductor layer, which is far away from the substrate, and the second semiconductor layer is positioned on one side of the light-emitting layer, which is far away from the first semiconductor layer;
the first insulating layer is positioned on one side of the light-emitting structure far away from the substrate, and the reflecting layer is positioned on one side of the first insulating layer far away from the substrate;
the first heat conducting structure comprises a first electrode and a fourth bonding pad; the two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected with a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected with a second end of the first electrode;
the substrate includes a non-light emitting region; the orthographic projection of the first electrode and the fourth bonding pad on the substrate is positioned in the non-luminous area; the fourth pad is connected with the first electrode through the via hole on the first insulating layer and the via hole on the reflecting layer.
20. A display substrate, comprising: driving a backplane with the light emitting device of any one of claims 1 to 19;
the driving back plate comprises a second heat conducting structure;
the first heat conducting structure of the light emitting device is in contact with the second heat conducting structure of the driving back plate.
CN202110702909.1A 2021-06-24 2021-06-24 Light emitting device and display substrate Pending CN113299681A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115394903A (en) * 2022-06-30 2022-11-25 厦门天马微电子有限公司 Display panel and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115394903A (en) * 2022-06-30 2022-11-25 厦门天马微电子有限公司 Display panel and display device

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