CN113299606A - Flexible substrate and preparation method thereof - Google Patents
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- CN113299606A CN113299606A CN202110505663.9A CN202110505663A CN113299606A CN 113299606 A CN113299606 A CN 113299606A CN 202110505663 A CN202110505663 A CN 202110505663A CN 113299606 A CN113299606 A CN 113299606A
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 60
- 239000004642 Polyimide Substances 0.000 claims abstract description 52
- 229920001721 polyimide Polymers 0.000 claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000005224 laser annealing Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 230000009477 glass transition Effects 0.000 claims description 16
- -1 siloxane chain Chemical group 0.000 claims description 13
- 238000001029 thermal curing Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 239000012744 reinforcing agent Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003623 enhancer Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 238000013007 heat curing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002318 adhesion promoter Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a flexible substrate and a preparation method thereof. The preparation method comprises the following steps: providing a hard substrate; sequentially preparing a first flexible base layer, a silicon oxide inorganic layer, an amorphous silicon inorganic layer and a second flexible base layer on the hard substrate; removing the hard substrate; the first flexible base layer is made of a first polyimide material, and the second flexible base layer is made of a second polyimide material. The invention has the technical effects of enhancing the bending performance of the flexible substrate and the stability of the manufacturing process.
Description
Technical Field
The application relates to the field of display, in particular to a flexible substrate and a preparation method thereof.
Background
Compared with the traditional display device, the flexible display device, such as the flexible OLED, the flexible Micro-LED and the like, has the advantages of being capable of being folded outwards, folded inwards, folded three or even folded multiple and the like, and has the characteristics of convenience in carrying, diversified experience and the like. Therefore, flexible display devices are becoming a hot spot in current research and a development direction in the future.
Polyimide materials are preferred materials for flexible self-luminous substrates due to their excellent heat resistance and low thermal expansion coefficient.
In the prior art, in order to improve the laser lift-off yield of a flexible substrate, a double-layer polyimide with a polyimide, silicon oxide and polyimide sandwich structure is mainly introduced as the flexible substrate.
However, in the course of research and practice on the prior art, the inventors of the present application found that, in the above solution, although the separation yield at the time of laser lift-off can be improved, the following risks exist: in the manufacturing process of a panel TFT, the double-layer polyimide structure is easy to separate, and the stability of the manufacturing process cannot be met; and in the process of bending the panel, the double-layer polyimide structure is easy to separate due to insufficient adhesive force, so that the bending stability cannot be met.
Disclosure of Invention
An object of the present invention is to provide a flexible substrate and a method for manufacturing the same, which can solve the technical problem that a double-layer polyimide structure in an existing flexible substrate is easily separated during bending and TFT manufacturing processes.
In order to achieve the above object, the present invention provides a method for manufacturing a flexible substrate, comprising the steps of: providing a hard substrate; preparing a first flexible base layer on the hard substrate, wherein the first flexible base layer is made of a first polyimide material; preparing a silicon oxide inorganic layer on the first flexible base layer; preparing an amorphous silicon inorganic layer on the silicon oxide inorganic layer; preparing a second flexible base layer on the amorphous silicon inorganic layer, wherein the second flexible base layer is made of a second polyimide material; and removing the hard substrate.
Furthermore, the material of the second polyimide material comprises an adhesion reinforcing agent.
Further, the adhesion enhancer comprises siloxane linkages; the adhesive force reinforcing agent accounts for 5-15% of the second polyimide material by mass.
Further, the step of preparing the first flexible base layer on the hard substrate includes: coating a layer of first polyimide solution on the hard substrate, and performing thermal curing treatment on the first polyimide solution, wherein the temperature of the thermal curing treatment is 400-1000 ℃; the step of preparing the second flexible base layer on the amorphous silicon inorganic layer comprises: and coating a layer of second polyimide solution on the amorphous silicon inorganic layer, and performing thermocuring treatment on the second polyimide solution, wherein the thermocuring treatment temperature is 400-1000 ℃.
Further, the step of preparing the amorphous silicon inorganic layer on the silicon oxide inorganic layer includes: and carrying out laser annealing treatment on the amorphous silicon inorganic layer.
Further, the thickness of the film layer of the silicon oxide inorganic layer is 3000-6000 angstroms; the thickness of the film layer of the amorphous silicon inorganic layer is 100-200 angstrom meters; in the step of laser annealing treatment, the energy density of laser annealing is 190-240 mJ/cm2。
Further, the amorphous silicon inorganic layer has a hydrogen content of less than 10% after the laser annealing step.
Further, the thickness of the film layers of the first flexible base layer and the second flexible base layer is 6-10 microns; and/or the glass transition temperature of the first flexible base layer and the second flexible base layer is 400-1000 ℃.
Further, the first flexible base layer and the second flexible base layer have a coefficient of thermal expansion of less than 5ppm/° c.
In order to achieve the above object, the present invention also provides a flexible substrate comprising: a first flexible base layer; a silicon oxide inorganic layer disposed on the first flexible base layer; an amorphous silicon inorganic layer disposed on the silicon oxide inorganic layer; the second flexible base layer is arranged on the amorphous silicon inorganic layer; the first flexible base layer is made of a first polyimide material, the second flexible base layer is made of a second polyimide material, and the second polyimide material comprises siloxane chain links.
The technical effect of the application lies in that the amorphous silicon inorganic layer after one layer of laser annealing treatment is added between the double-layer flexible base layer, the roughness of the surface of the amorphous silicon inorganic layer is enhanced, and meanwhile, siloxane chain links are added in the material of the second flexible base layer in direct contact with the amorphous silicon inorganic layer, so that the binding power of the second flexible base layer is enhanced. At this time, the adhesive force between the amorphous silicon inorganic layer and the second flexible base layer is significantly increased, so that the flexible substrate is ensured to have excellent bending performance in the subsequent bending process, and the adhesive force between the first flexible base layer and the second flexible base layer is enhanced in the subsequent thin film transistor manufacturing process, so that the manufacturing process stability is ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a flexible substrate according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a flexible substrate provided in an embodiment of the present application before a hard substrate is peeled;
fig. 3 is a schematic structural diagram of a flexible substrate provided in an embodiment of the present application.
Description of reference numerals:
1. a hard substrate; 2. a first flexible base layer; 3. a silicon oxide inorganic layer; 4. an amorphous silicon inorganic layer; 5. a second flexible base layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides a flexible substrate and a preparation method thereof. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
As shown in fig. 1 to 3, an embodiment of the present application provides a method for manufacturing a flexible substrate, which includes steps S1 to S6.
S1 provides a rigid substrate 1, where the rigid substrate 1 serves as a substrate, and generally adopts a rigid substrate such as a glass substrate, etc. to facilitate uniform coating of a flexible material (e.g. a polymer material) and prevent bubbles, etc.
S2 is to prepare a first flexible base layer 2 on the hard substrate 1, specifically, to uniformly coat a layer of a first Polyimide solution (Polyimide, PI) on the hard substrate 1, wherein the first Polyimide solution is prepared by low-temperature polycondensation of dianhydride and diamine monomers in a polar aprotic solvent. And performing thermal curing treatment on the first polyimide solution, wherein the temperature of the thermal curing treatment is higher than 400 ℃, in one embodiment of the application, the temperature of the thermal curing treatment is 400-1000 ℃, and the first polyimide solution forms the first flexible base layer 2 after film formation after thermal curing. The first flexible base layer 2 has good flexibility and bending performance, and is suitable for flexible display devices and the like.
The thickness of the formed first flexible base layer 2 is 6-10 micrometers, the glass transition temperature of the first flexible base layer 2 is greater than 400 ℃, and in one embodiment of the present application, the glass transition temperature of the first flexible base layer 2 is 400-1000 ℃. The first flexible base layer 2 has a coefficient of thermal expansion of less than 5 ppm/DEG C.
The glass transition temperature (Tg) is the temperature at which the glass state changes to a highly elastic state. The glass transition is the inherent property of amorphous polymer materials, is the macroscopic manifestation of the transition of the motion form of polymers, and directly influences the service performance and the process performance of the materials, so the glass transition is the main content of polymer physical research for a long time. The glass transition temperature (Tg) is the lowest temperature at which the molecular chain segment can move, the height of the Tg is directly related to the flexibility of the molecular chain, and the higher the flexibility of the molecular chain is, the lower the glass transition temperature is; the molecular chain has high rigidity and the glass transition temperature is high.
S3 is to form the inorganic layer 3 of silicon oxide on the first flexible substrate 2, and specifically, a layer of silicon oxide (SiO) is deposited on the first flexible substrate 2 by Plasma Enhanced Chemical Vapor Deposition (PECVD), etc2) The silicon oxide inorganic layer 3 is formed. The thickness of the silicon oxide inorganic layer 3 is 3000-6000 angstrom meters
The plasma chemical enhanced vapor deposition method is characterized in that silicon oxide gas is enabled to form plasma locally by means of microwave or radio frequency and the like, the plasma is strong in chemical activity and easy to react, and a silicon oxide film, namely the silicon oxide inorganic layer 3, can be deposited on the first flexible base layer 2.
S4 is to form an amorphous silicon inorganic layer 4 on the silicon oxide inorganic layer 3, specifically, to deposit a layer of amorphous silicon on the silicon oxide inorganic layer 3 by a plasma enhanced chemical vapor deposition method, and to perform laser annealing treatment to form the amorphous silicon inorganic layer 4. The thickness of the amorphous silicon inorganic layer 4 is 100-200 angstrom meters
In the laser annealing treatment step, the energy density of laser annealing is 190-240 mJ/cm2The laser wavelength is 200-400 nm, and in the embodiment, the wavelength of the laser is preferably 308 nm.
After the laser annealing treatment step is completed, the hydrogen content atomic percent of the amorphous silicon inorganic layer 4 is lower than 10%, the surface roughness of the amorphous silicon inorganic layer 4 is increased, the adhesion force between the amorphous silicon inorganic layer and a subsequent film layer is improved, the phenomena of separation and the like in the bending process are prevented, and the adhesion force between the amorphous silicon inorganic layer 4 and other film layers is improved.
S5 is to prepare a second flexible substrate 5 on the amorphous silicon inorganic layer 4, specifically, to uniformly coat a layer of second Polyimide solution (Polyimide, PI) on the amorphous silicon inorganic layer 4, where the material of the second Polyimide solution includes a bonding force enhancer, the bonding force enhancer includes siloxane chain segments, and the mass fraction of the bonding force enhancer in the second Polyimide material is 5-15%. After the adhesion force reinforcing agent containing siloxane chain links is added, the adhesion of the second polyimide solution is improved, and the bending performance of the second flexible base layer 5 is enhanced.
And performing heat curing treatment on the second polyimide solution, wherein the temperature of the heat curing treatment is greater than 400 ℃, in one embodiment of the application, the temperature of the heat curing treatment is 400-1000 ℃, and the second polyimide solution forms the second flexible base layer 5 after film formation after heat curing (see fig. 2). The second flexible base layer 5 has good flexibility and bending performance, and is suitable for flexible display devices and the like.
The thickness of the formed second flexible base layer 5 is 6-10 micrometers, the glass transition temperature of the second flexible base layer 5 is greater than 400 ℃, and in one embodiment of the present application, the glass transition temperature of the second flexible base layer 5 is 400-1000 ℃. The second flexible base layer 5 has a coefficient of thermal expansion of less than 5 ppm/deg.C.
First flexible basic unit 2 the inorganic layer of silica 3 the inorganic layer of amorphous silicon 4 and the flexible basic unit of second 5 forms a double-deck flexible base plate add the siloxane chain link as the adhesion promoter in the polyimide material of the flexible basic unit of second 5, and it is right the inorganic layer of amorphous silicon 4 carries out laser annealing and handles, is strengthening when the adhesion promoter of the flexible basic unit of second 5 self, also can strengthen the flexible basic unit of second 5 with adhesion promoter between the inorganic layer of amorphous silicon 4 further improves the buckling performance of double-deck flexible base plate reduces the processing procedure degree of difficulty, makes double-deck flexible base plate is more applicable to flexible display device.
S6, removing the hard substrate 1, specifically, the hard substrate 1 and the first flexible substrate 2 may be peeled off by laser peeling or the like, and removing the hard substrate 1, the laser peeling is a relatively mild film layer separation method, the damage to the first flexible substrate 2 is very small, the integrity of the peeled double-layer flexible substrate is ensured, and the bending performance is not affected.
The preparation method of the flexible substrate has the technical effects that in the preparation process of the flexible substrate, one amorphous silicon inorganic layer is added between two layers of flexible base layers, laser annealing treatment is carried out on the amorphous silicon inorganic layer, the roughness of the surface of the amorphous silicon inorganic layer is enhanced, and meanwhile, siloxane chain links are added in the material of a second flexible base layer in direct contact with the amorphous silicon inorganic layer, so that the binding power of the second flexible base layer is enhanced.
At the moment, the adhesive force between the amorphous silicon inorganic layer subjected to laser annealing and the second flexible base layer added with the siloxane chain links can be remarkably increased, so that the double-layer flexible substrate formed by the first flexible base layer, the silicon oxide inorganic layer, the amorphous silicon inorganic layer and the second flexible base layer is ensured to have excellent bending performance in the subsequent bending process, the adhesive force between the first flexible base layer and the second flexible base layer is enhanced in the subsequent thin film transistor manufacturing process, and the manufacturing process stability is ensured.
As shown in fig. 3, an embodiment of the present application further provides a flexible substrate, which includes a first flexible base layer 2, a silicon oxide inorganic layer 3, an amorphous silicon inorganic layer 4, and a second flexible base layer 5.
The first flexible base layer 2 is made of a first polyimide solution, and the first polyimide solution is prepared by low-temperature polycondensation of dianhydride and diamine monomers in a polar aprotic solvent. The thickness of the first flexible base layer 2 is 6-10 micrometers, the glass transition temperature of the first flexible base layer 2 is greater than 400 ℃, and in one embodiment of the present application, the glass transition temperature of the first flexible base layer 2 is 400-1000 ℃. The first flexible base layer 2 has a coefficient of thermal expansion of less than 5 ppm/DEG C. The first flexible base layer 2 has good flexibility and bending performance, and is suitable for flexible display devices and the like.
The silicon oxide inorganic layer 3 is arranged on the first flexible base layer 2, and the silicon oxide is silicon dioxide (SiO)2). The thickness of the silicon oxide inorganic layer 3 is 3000-6000 angstrom meters
The amorphous silicon inorganic layer 4 is arranged on the silicon oxide inorganic layer 3, the amorphous silicon inorganic layer 4 is formed after laser annealing treatment, and the thickness of the amorphous silicon inorganic layer 4 is 100-200 angstrom meters
After laser annealing treatment, the hydrogen content atomic percent of the amorphous silicon inorganic layer 4 is lower than 10%, the surface roughness of the amorphous silicon inorganic layer 4 is increased, the improvement of the adhesive force between the amorphous silicon inorganic layer and other film layers is facilitated, the phenomena of separation and the like in the bending process are prevented, and the adhesive force between the amorphous silicon inorganic layer 4 and other film layers is improved.
The second flexible base layer 5 is arranged on the amorphous silicon inorganic layer 4, the material used by the second flexible base layer 5 is a second Polyimide solution (Polyimide, PI), the material of the second Polyimide solution comprises a bonding force reinforcing agent, the bonding force reinforcing agent comprises siloxane chain links, and the mass fraction of the bonding force reinforcing agent in the second Polyimide material is 5-15%. After the adhesion force reinforcing agent containing siloxane chain links is added, the adhesion of the second polyimide solution is improved, and the bending performance of the second flexible base layer 5 is enhanced, so that the flexible display device is more suitable for flexible display devices.
The thickness of the second flexible base layer 5 is 6-10 micrometers, the glass transition temperature of the second flexible base layer 5 is greater than 400 ℃, and in one embodiment of the present application, the glass transition temperature of the second flexible base layer 5 is 400-1000 ℃. The second flexible base layer 5 has a coefficient of thermal expansion of less than 5 ppm/deg.C.
Siloxane chain links are added into the polyimide material of the second flexible base layer 5 to serve as a bonding force reinforcing agent, the amorphous silicon inorganic layer 4 is subjected to laser annealing treatment, the bonding force of the second flexible base layer 5 is enhanced, meanwhile, the bonding force between the second flexible base layer 5 and the amorphous silicon inorganic layer 4 can also be enhanced, the bending performance of the double-layer flexible substrate is further improved, the processing difficulty is reduced, and the double-layer flexible substrate is more suitable for flexible display devices.
The technical effect of the flexible substrate is that an amorphous silicon inorganic layer after laser annealing treatment is added between double flexible base layers to enhance the roughness of the surface of the amorphous silicon inorganic layer, and meanwhile, siloxane chain links are added in the material of a second flexible base layer in direct contact with the amorphous silicon inorganic layer to enhance the binding power of the second flexible base layer.
At this time, the adhesive force between the amorphous silicon inorganic layer after laser annealing and the second flexible base layer added with the siloxane chain links is obviously increased, so that the flexible substrate is ensured to have excellent bending performance in the subsequent bending process, the adhesive force between the first flexible base layer and the second flexible base layer is enhanced in the subsequent manufacturing process of the thin film transistor, and the stability of the manufacturing process is ensured.
The flexible substrate and the method for manufacturing the flexible substrate provided by the embodiment of the present application are described in detail above, and the principle and the embodiment of the present application are explained in the present application by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A method for preparing a flexible substrate is characterized by comprising the following steps:
providing a hard substrate;
preparing a first flexible base layer on the hard substrate, wherein the first flexible base layer is made of a first polyimide material;
preparing a silicon oxide inorganic layer on the first flexible base layer;
preparing an amorphous silicon inorganic layer on the silicon oxide inorganic layer;
preparing a second flexible base layer on the amorphous silicon inorganic layer, wherein the second flexible base layer is made of a second polyimide material; and
and removing the hard substrate.
2. The method of manufacturing a flexible substrate according to claim 1,
the material of the second polyimide material comprises an adhesion reinforcing agent.
3. The method of manufacturing a flexible substrate according to claim 2,
the adhesion enhancer comprises siloxane linkages;
the adhesive force reinforcing agent accounts for 5-15% of the second polyimide material by mass.
4. The method of manufacturing a flexible substrate according to claim 1,
the step of preparing the first flexible base layer on the hard substrate comprises:
coating a layer of first polyimide solution on the hard substrate, and performing thermal curing treatment on the first polyimide solution, wherein the temperature of the thermal curing treatment is 400-1000 ℃;
the step of preparing the second flexible base layer on the amorphous silicon inorganic layer comprises:
and coating a layer of second polyimide solution on the amorphous silicon inorganic layer, and performing thermocuring treatment on the second polyimide solution, wherein the thermocuring treatment temperature is 400-1000 ℃.
5. The method of manufacturing a flexible substrate according to claim 1, wherein the step of manufacturing the amorphous silicon inorganic layer on the silicon oxide inorganic layer comprises:
and carrying out laser annealing treatment on the amorphous silicon inorganic layer.
6. The method for manufacturing a flexible substrate according to claim 5,
the thickness of the film layer of the silicon oxide inorganic layer is 3000-6000 angstroms;
the thickness of the film layer of the amorphous silicon inorganic layer is 100-200 angstrom meters;
in the step of laser annealing treatment, the energy density of laser annealing is 190-240 mJ/cm2。
7. The method for manufacturing a flexible substrate according to claim 5,
the amorphous silicon inorganic layer has a hydrogen content of less than 10% after the laser annealing step.
8. The method of manufacturing a flexible substrate according to claim 1,
the thickness of the film layers of the first flexible base layer and the second flexible base layer is 6-10 mu m; and/or the presence of a gas in the gas,
the glass transition temperature of the first flexible base layer and the second flexible base layer is 400-1000 ℃.
9. The method of manufacturing a flexible substrate according to claim 1,
the first flexible base layer and the second flexible base layer have a coefficient of thermal expansion of less than 5ppm/° C.
10. A flexible substrate, comprising:
a first flexible base layer;
a silicon oxide inorganic layer disposed on the first flexible base layer;
an amorphous silicon inorganic layer disposed on the silicon oxide inorganic layer; and
the second flexible base layer is arranged on the amorphous silicon inorganic layer;
the first flexible base layer is made of a first polyimide material, the second flexible base layer is made of a second polyimide material, and the second polyimide material comprises siloxane chain links.
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