CN113298068A - Wafer dislocation image acquisition device and acquisition method thereof - Google Patents

Wafer dislocation image acquisition device and acquisition method thereof Download PDF

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Publication number
CN113298068A
CN113298068A CN202110577927.1A CN202110577927A CN113298068A CN 113298068 A CN113298068 A CN 113298068A CN 202110577927 A CN202110577927 A CN 202110577927A CN 113298068 A CN113298068 A CN 113298068A
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Prior art keywords
wafer
acquisition unit
distance
image acquisition
dislocation
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CN113298068B (en
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康鸿明
林志鹏
林文垚
卢甲贞
陈靖世
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Xiamen Beogold Technology Co ltd
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Xiamen Beogold Technology Co ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00Arrangements for image or video recognition or understanding
    • G06V10/10Image acquisition
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608Height gauges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a wafer dislocation image acquisition device and an acquisition method thereof, wherein the acquisition device comprises a machine table, a support piece, a control terminal, an image display, a distance acquisition unit which is positioned above the support piece and can move relatively in parallel relative to a wafer on the support piece, and an image acquisition unit which is positioned above the support piece and can move relatively in parallel relative to the wafer on the support piece and can move relatively in vertical relative to the wafer on the support piece, wherein the distance acquisition unit, the image acquisition unit and the image display are all electrically connected with the control terminal. The acquisition device realizes the full-automatic dislocation image acquisition of single points, multiple points and full wafers on the wafer disc without manual participation, avoids the damage of the wafer in the acquisition process, and improves the acquisition efficiency of the dislocation images of the wafer and the detection efficiency of the wafer.

Description

Wafer dislocation image acquisition device and acquisition method thereof
Technical Field
The invention relates to an image acquisition device and an image acquisition method, in particular to a wafer dislocation image acquisition device and an image acquisition method.
Background
In the advanced semiconductor manufacturing industry, the general preparation process of wafers is as follows: firstly, polycrystal synthesis is carried out, then, single crystal is obtained through culture, then, crystal bar is obtained through growth, then, crystal wafer is obtained through slicing, and then, grinding, polishing and cleaning are carried out, and finally, the crystal wafer is packaged. Furthermore, the entire wafer fabrication process is lengthy and has poor rework performance, and it is conceivable that the loss due to one step is enormous if it is a problem. In order to achieve a high wafer manufacturing yield, process inspection is required throughout the wafer manufacturing process, wherein wafer dislocation inspection of the wafer is an important means for ensuring the quality of the wafer.
In the prior art, after a crystal bar is obtained and before a crystal bar is sliced to obtain a crystal wafer, the crystal wafers at the head and the tail of the crystal bar are generally required to be obtained first, and wafer dislocation detection is performed on the two crystal wafers. Currently, the dislocation of the wafer is observed manually through a microscope. The method has the following defects: the manual detection efficiency is low, the consistency is low, and the full-wafer detection is difficult to realize.
Disclosure of Invention
The invention provides a wafer dislocation image acquisition device and an acquisition method thereof, which overcome the defects of the prior art in the background art.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the utility model provides a wafer dislocation image acquisition device, it includes the board, establish the support piece that is used for stably putting the wafer on the board, take the control terminal of treater, the image display ware, be located support piece top and can be relative to the parallel relative motion's of wafer on the support piece distance acquisition unit, be located support piece top and can be relative to the parallel relative motion's of wafer on the support piece image acquisition unit that can be relative to the perpendicular relative motion of wafer on the support piece, this distance acquisition unit, the image display ware all is connected with this control terminal electric, acquire the image information of wafer on the support piece and feed back to control terminal through this image acquisition unit, acquire the distance information of wafer on this distance acquisition unit to the support piece and feed back to control terminal through the distance acquisition unit.
In one embodiment: the table top of the machine table is provided with a moving platform, the supporting piece is fixedly arranged on the moving platform, and the moving platform drives the supporting piece and the wafer on the supporting piece to move on a two-dimensional plane.
In one embodiment: the motion platform is electrically connected with the control terminal and is controlled by the control terminal to move.
In one embodiment: the image acquisition unit is connected with a vertical movement mechanism and is driven by the vertical driving mechanism to vertically move relative to the wafer on the support.
In one embodiment: the distance acquisition unit and the image acquisition unit are both fixedly arranged on a vertical movement mechanism and are driven by the vertical driving mechanism to vertically move relative to the wafer on the supporting piece.
In one embodiment: the image acquisition unit is a camera lens.
In one embodiment: the distance acquisition unit is a photoelectric distance measuring sensor.
A method for acquiring a wafer dislocation image acquisition device comprises the following steps:
step 1, adjusting an image acquisition unit to a height position capable of clearly imaging dislocation at a position of a wafer, and recording a first vertical distance from the image acquisition unit to the position of the wafer; and the distance acquisition unit and the image acquisition unit are kept from relative movement in the vertical direction perpendicular to the wafer;
step 2, enabling the distance acquisition unit to move in parallel relative to the wafer to be right above a specified position of the wafer where a dislocation image is to be acquired, and acquiring a second vertical distance from the distance acquisition unit to the specified position;
step 3, enabling the image acquisition unit to move to a position above the specified position of the wafer in parallel relative to the wafer; and (3) according to the difference value of the vertical distance II obtained in the step (2) and the known vertical distance I in the step (I), the image acquisition unit makes vertical motion relative to the wafer, and the motion amplitude is the difference value, so that the image acquisition unit reaches the height position capable of acquiring clear imaging to acquire a clear dislocation image.
A method for acquiring a wafer dislocation image acquisition device comprises the following steps:
step 1, adjusting an image acquisition unit to a height position capable of clearly imaging dislocation at a position of a wafer, and recording a first vertical distance from the image acquisition unit to the position of the wafer; and the distance acquisition unit and the image acquisition unit are kept from relative movement in the vertical direction perpendicular to the wafer;
step 2, enabling the distance acquisition unit to move in parallel relative to the wafer to be right above a plurality of specified positions of the wafer where dislocation images are to be acquired according to a set track, sequentially acquiring, recording and storing a second vertical distance from the distance acquisition unit to the specified positions;
step 3, enabling the image acquisition unit to move in parallel relative to the wafer to a plurality of specified positions of the wafer according to the track set in the step 2; and (3) according to the difference value between the vertical distance II corresponding to each designated position obtained in the step (2) and the known vertical distance I in the step (I), enabling the image acquisition unit to make vertical motion relative to the wafer at each designated position, and enabling the image acquisition unit to reach the height position capable of acquiring clear imaging so as to acquire a clear dislocation image.
In one embodiment: in the step 2 and the step 3, the image acquisition unit and the distance acquisition unit are controlled by the control terminal to move to each specified position in parallel relative to the wafer according to the set track, and the image acquisition unit is controlled by the control terminal to move vertically relative to the wafer.
Compared with the background technology, the technical scheme has the following advantages:
1. the dislocation image acquisition device and the dislocation image acquisition method can clearly acquire the dislocation image of the wafer, and the image acquisition and detection process is a non-contact process, so that an operator and a test board can be prevented from contacting the wafer, namely, the wafer is prevented from being damaged or polluted;
2. the automatic acquisition of images is realized, the movement of the movement platform and the image acquisition device is controlled by the control terminal, the automatic acquisition of distance information by the distance acquisition unit and the automatic acquisition of dislocation images at any positions of the wafer are realized, the automatic acquisition and detection of the dislocation images of the whole wafer are realized, the dislocation image acquisition efficiency is high, and the consistency is high.
Drawings
The invention is further illustrated by the following figures and examples.
Fig. 1 is a front view of a wafer dislocation image capturing device.
Fig. 2 is a top view of a wafer dislocation image capturing device.
Fig. 3 is a flow chart of single-point image acquisition of a wafer dislocation image acquisition device.
Fig. 4 is a flow chart of multi-point or full-wafer image acquisition of a wafer dislocation image acquisition device.
Detailed Description
Referring to fig. 1 and 2, a wafer dislocation image capturing device includes a machine table 1, a support member 2 disposed on the machine table 1 for stably placing a wafer 5, a control terminal 3 with a processor, an image display 4, a distance capturing unit 6 disposed above the support member 2 and capable of moving relatively in parallel with respect to the wafer 5 on the support member 2, an image capturing unit 7 disposed above the support member 2 and capable of moving relatively in parallel with respect to the wafer 5 on the support member 2 and capable of moving relatively in vertical direction with respect to the wafer 5 on the support member 2, the distance acquisition unit 6, the image acquisition unit 7 and the image display 4 are all electrically connected with the control terminal 3, the image information of the wafer 5 on the support 2 is obtained by the image acquisition unit 7 and fed back to the control terminal 3, the distance information from the distance acquisition unit 6 to the wafer 5 on the support 2 is acquired by the distance acquisition unit 6 and fed back to the control terminal 3.
A motion platform 8 is arranged on the table top of the machine table 1, the support piece 2 is fixedly arranged on the motion platform 8, the motion platform 8 drives the support piece 2 and the wafer 5 on the support piece 2 to move on a two-dimensional plane, and the parallel motion of the image acquisition unit 7 and the distance acquisition unit 6 relative to the wafer 6 is realized. The motion platform 8 is electrically connected with the control terminal 3 and is controlled by the control terminal 3 to move, so that the image acquisition unit 7 and the distance acquisition unit 6 can automatically move relative to the wafer 5. The two-dimensional motion platform 8 comprises a transverse driving mechanism and a longitudinal driving mechanism, wherein the driving mechanism can be an air cylinder driving mechanism, a screw rod driving mechanism and the like.
The image capturing unit 7 is connected to a vertical movement mechanism and is driven by the vertical driving mechanism to move vertically with respect to the wafer 5 on the support 2. The vertical movement mechanism may be a cylinder drive mechanism, a lead screw drive mechanism, or the like.
In this embodiment, the distance collecting unit 6 and the image collecting unit 7 are both fixed on a vertical movement mechanism and driven by the vertical driving mechanism to move vertically relative to the wafer 5 on the supporting member 2, i.e. the distance collecting unit 6 and the image collecting unit 7 keep moving synchronously.
In this embodiment, the image collecting unit 7 is a camera lens, and the distance collecting unit 6 is a photoelectric distance measuring sensor.
Referring to fig. 3, the acquisition method based on the wafer 5 dislocation image acquisition device realizes single-point image acquisition, and the single-point image acquisition executes the following steps:
step 1, adjusting an image acquisition unit 7 to a height position capable of clearly imaging dislocation at a position of a wafer 5, and recording a first vertical distance from the acquisition unit 6 to the position of the wafer 5; and the distance acquisition unit 6 and the image acquisition unit 7 are kept to have no relative movement in the vertical direction vertical to the wafer 5; for the acquisition device of the embodiment, the distance acquisition unit 6 and the image acquisition unit 7 are fixedly arranged on a vertical movement mechanism together, so that the distance acquisition unit 6 and the image acquisition unit 7 can be ensured to move together in the vertical direction without relative movement;
step 2, enabling the distance acquisition unit 6 to move in parallel relative to the wafer 5 to be right above a specified position of the wafer 5 where a dislocation image is to be acquired, and acquiring a second vertical distance from the distance acquisition unit 6 to the specified position;
step 3, enabling the image acquisition unit 7 to move to the position above the specified position of the wafer 5 in parallel relative to the wafer 5; according to the difference value between the vertical distance II obtained in the step 2 and the known vertical distance I obtained in the step I, the image acquisition unit 7 vertically moves relative to the wafer 5, and the movement amplitude is the difference value, so that the image acquisition unit 7 reaches a height position capable of acquiring clear images to acquire clear dislocation images.
A collection method of a wafer dislocation image collection device refers to fig. 4 to realize multipoint collection or full-wafer collection, and comprises the following steps:
step 1, adjusting an image acquisition unit 7 to a height position capable of clearly imaging dislocation at a position of a wafer 5, and recording a first vertical distance from the acquisition unit 6 to the position of the wafer 5; and the distance acquisition unit 6 and the image acquisition unit 7 are kept to have no relative movement in the vertical direction vertical to the wafer;
step 2, enabling the distance acquisition unit 6 to move in parallel relative to the wafer 5 to be right above a plurality of specified positions of the wafer 5 where dislocation images are to be acquired according to a set track, and sequentially acquiring, recording and storing vertical distances II from the distance acquisition unit 6 to the specified positions;
step 3, enabling the image acquisition unit 7 to move in parallel relative to the wafer 5 to be above a plurality of specified positions of the wafer 5 according to the track set in the step 2; according to the difference value between the vertical distance II corresponding to each designated position obtained in the step 2 and the known vertical distance I in the step I, the image acquisition unit 7 vertically moves relative to the wafer 5 at each designated position, and the movement amplitude is the difference value, so that the image acquisition unit 7 reaches a height position capable of acquiring clear images to acquire clear dislocation images.
In the acquisition method described in this embodiment, the image acquisition unit 7 and the distance acquisition unit 6 are controlled by the control terminal 3 to move to each designated position relative to the wafer 5, the image acquisition unit 7 is controlled by the control terminal 3 to move vertically relative to the wafer 5, the distance information measured by the distance acquisition unit 6 is fed back to the control terminal 3 and is recorded and calculated by the control terminal 3, and the dislocation image information captured by the image acquisition unit 7 is fed back to the control terminal 3 and is sent to the image display 4 by the control terminal 3 to be displayed. The whole image acquisition process is full-automatic and is free of manual participation.
The above description is only a preferred embodiment of the present invention, and therefore should not be taken as limiting the scope of the invention, which is defined by the appended claims and their equivalents.

Claims (10)

1. A wafer dislocation image acquisition device is characterized in that: the device comprises a machine table, establish the support piece that is used for stably putting the wafer on the machine table, take the control terminal of treater, image display, be located support piece top and can be relative support piece on the parallel relative motion's of wafer distance acquisition unit, be located support piece top and can be relative support piece on the parallel relative motion of wafer and can be relative support piece on the perpendicular relative motion's of wafer image acquisition unit, this distance acquisition unit, image display all with this control terminal electric connection, acquire the image information of wafer on the support piece and feed back to control terminal through this image acquisition unit, acquire the distance information of this distance acquisition unit to support piece on the wafer and feed back to control terminal through the distance acquisition unit.
2. The wafer dislocation image pickup device as set forth in claim 1, wherein: the table top of the machine table is provided with a moving platform, the supporting piece is fixedly arranged on the moving platform, and the moving platform drives the supporting piece and the wafer on the supporting piece to move on a two-dimensional plane.
3. The wafer dislocation image pickup device as set forth in claim 2, wherein: the motion platform is electrically connected with the control terminal and is controlled by the control terminal to move.
4. The wafer dislocation image pickup device as set forth in claim 1, wherein: the image acquisition unit is connected with a vertical movement mechanism and is driven by the vertical driving mechanism to vertically move relative to the wafer on the support.
5. The wafer dislocation image pickup device as set forth in claim 1, wherein: the distance acquisition unit and the image acquisition unit are both fixedly arranged on a vertical movement mechanism and are driven by the vertical driving mechanism to vertically move relative to the wafer on the supporting piece.
6. The wafer dislocation image pickup device as set forth in claim 1, wherein: the image acquisition unit is a camera lens.
7. The wafer dislocation image pickup device as set forth in claim 1, wherein: the distance acquisition unit is a photoelectric distance measuring sensor.
8. The wafer dislocation image pickup device as set forth in claim 1, wherein: the method comprises the following steps:
step 1, adjusting an image acquisition unit to a height position capable of clearly imaging dislocation at a position of a wafer, and recording a first vertical distance from the image acquisition unit to the position of the wafer; and the distance acquisition unit and the image acquisition unit are kept from relative movement in the vertical direction perpendicular to the wafer;
step 2, enabling the distance acquisition unit to move in parallel relative to the wafer to be right above a specified position of the wafer where a dislocation image is to be acquired, and acquiring a second vertical distance from the distance acquisition unit to the specified position;
step 3, enabling the image acquisition unit to move to a position above the specified position of the wafer in parallel relative to the wafer; and (3) according to the difference value of the vertical distance II obtained in the step (2) and the known vertical distance I in the step (I), the image acquisition unit makes vertical motion relative to the wafer, and the motion amplitude is the difference value, so that the image acquisition unit reaches the height position capable of acquiring clear imaging to acquire a clear dislocation image.
9. The wafer dislocation image pickup device as set forth in claim 1, wherein: the method comprises the following steps:
step 1, adjusting an image acquisition unit to a height position capable of clearly imaging dislocation at a position of a wafer, and recording a first vertical distance from the image acquisition unit to the position of the wafer; and the distance acquisition unit and the image acquisition unit are kept from relative movement in the vertical direction perpendicular to the wafer;
step 2, enabling the distance acquisition unit to move in parallel relative to the wafer to be right above a plurality of specified positions of the wafer where dislocation images are to be acquired according to a set track, sequentially acquiring, recording and storing a second vertical distance from the distance acquisition unit to the specified positions;
step 3, enabling the image acquisition unit to move in parallel relative to the wafer to a plurality of specified positions of the wafer according to the track set in the step 2; and (3) according to the difference value between the vertical distance II corresponding to each designated position obtained in the step (2) and the known vertical distance I in the step (I), enabling the image acquisition unit to make vertical motion relative to the wafer at each designated position, and enabling the image acquisition unit to reach the height position capable of acquiring clear imaging so as to acquire a clear dislocation image.
10. The wafer dislocation image pickup device as set forth in claim 9, wherein: in the step 2 and the step 3, the image acquisition unit and the distance acquisition unit are controlled by the control terminal to move to each specified position in parallel relative to the wafer according to the set track, and the image acquisition unit is controlled by the control terminal to move vertically relative to the wafer.
CN202110577927.1A 2021-05-26 2021-05-26 Wafer dislocation image acquisition device and acquisition method thereof Active CN113298068B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006234769A (en) * 2005-02-28 2006-09-07 Nikon Corp Position measuring method and position measuring apparatus
US20160190020A1 (en) * 2013-08-14 2016-06-30 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
CN108732189A (en) * 2018-08-03 2018-11-02 江苏阿瑞斯智能设备有限公司 A kind of chip wafer detection device
TW201929115A (en) * 2017-12-15 2019-07-16 旺矽科技股份有限公司 Wafer inspection method
CN110098139A (en) * 2019-04-26 2019-08-06 德淮半导体有限公司 Wafer inspection device and wafer inspection method
CN212646510U (en) * 2020-06-23 2021-03-02 珠海市奥德维科技有限公司 Automatic detector for wafer dislocation
CN112557402A (en) * 2020-12-04 2021-03-26 北京天科合达半导体股份有限公司 Dislocation detection system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006234769A (en) * 2005-02-28 2006-09-07 Nikon Corp Position measuring method and position measuring apparatus
US20160190020A1 (en) * 2013-08-14 2016-06-30 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
TW201929115A (en) * 2017-12-15 2019-07-16 旺矽科技股份有限公司 Wafer inspection method
CN108732189A (en) * 2018-08-03 2018-11-02 江苏阿瑞斯智能设备有限公司 A kind of chip wafer detection device
CN110098139A (en) * 2019-04-26 2019-08-06 德淮半导体有限公司 Wafer inspection device and wafer inspection method
CN212646510U (en) * 2020-06-23 2021-03-02 珠海市奥德维科技有限公司 Automatic detector for wafer dislocation
CN112557402A (en) * 2020-12-04 2021-03-26 北京天科合达半导体股份有限公司 Dislocation detection system

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
TOSHIYUKI ISSHIKI.ET AL: "Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy", 《MATERIALS SCIENCE FORUM》 *
刘西峰: "基于图像配准的晶圆表面缺陷检测", 《仪器仪表与分析监测》 *
杨航: "锗锡薄膜的分子束外延生长与GaAs基集成光电器件研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 *

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Inventor after: Kang Hongming

Inventor after: Lin Zhipeng

Inventor after: Lin Wenyao

Inventor after: Lu Jiazhen

Inventor after: Chen Jingshi

Inventor before: Kang Hongming

Inventor before: Lin Zhipeng

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Inventor before: Chen Jingshi