CN113281269B - 光自旋霍尔效应传感器及其设备 - Google Patents
光自旋霍尔效应传感器及其设备 Download PDFInfo
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- CN113281269B CN113281269B CN202110841078.6A CN202110841078A CN113281269B CN 113281269 B CN113281269 B CN 113281269B CN 202110841078 A CN202110841078 A CN 202110841078A CN 113281269 B CN113281269 B CN 113281269B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/218—Measuring properties of electrooptical or magnetooptical media
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- General Health & Medical Sciences (AREA)
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CN114839149A (zh) * | 2022-04-29 | 2022-08-02 | 南京工业职业技术大学 | 一种基于石墨烯光泵浦光子自旋霍尔效应的超敏生物传感器 |
CN115165794B (zh) * | 2022-07-27 | 2025-07-01 | 南京工业职业技术大学 | 一种基于光学塔姆态光子自旋霍尔效应的超敏太赫兹液体传感器 |
Citations (3)
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---|---|---|---|---|
CN106191999A (zh) * | 2016-09-19 | 2016-12-07 | 中国科学院物理研究所 | 一种锑烯二维原子晶体材料及其制备方法 |
CN108611677A (zh) * | 2018-05-08 | 2018-10-02 | 中国科学院物理研究所 | 一种自然图案化单层硒化铜二维原子晶体材料及制备方法 |
CN111668471A (zh) * | 2020-06-23 | 2020-09-15 | 商丘师范学院 | 一种钾离子电池负极用锑烯/石墨烯复合材料及制备方法 |
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US10602965B2 (en) * | 2013-09-17 | 2020-03-31 | Medibotics | Wearable deformable conductive sensors for human motion capture including trans-joint pitch, yaw, and roll |
US10186584B2 (en) * | 2016-08-18 | 2019-01-22 | Uchicago Argonne, Llc | Systems and methods for forming diamond heterojunction junction devices |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106191999A (zh) * | 2016-09-19 | 2016-12-07 | 中国科学院物理研究所 | 一种锑烯二维原子晶体材料及其制备方法 |
CN108611677A (zh) * | 2018-05-08 | 2018-10-02 | 中国科学院物理研究所 | 一种自然图案化单层硒化铜二维原子晶体材料及制备方法 |
CN111668471A (zh) * | 2020-06-23 | 2020-09-15 | 商丘师范学院 | 一种钾离子电池负极用锑烯/石墨烯复合材料及制备方法 |
Non-Patent Citations (3)
Title |
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Highly sensitive biosensor with Graphene-MoS2 heterostructure based on photonic spin Hall effect;Nengxi Li et al.;《Journal of Magnetism and Magnetic Materials》;20190402;第484卷;445-449页 * |
Photonic spin Hall effect detection using weak measurement in the SPR structure using antimonene: A sensing application;Yogendra Kumar Prajapati;《Superlattices and Microstructures》;20210416;第155卷;1-2、6页 * |
Spin Hall effect of light in a prism-waveguide coupling structure with a magneto-optical bimetallic film;Pengyu Zhang et al.;《Superlattices and Microstructures》;20190123;第128卷;136-143页 * |
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Effective date of registration: 20231216 Address after: Room 301, 3rd Floor, Building C5, Phase I, Jinrong Wangcheng Science and Technology Industrial Park, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City, Hunan Province, 410000 Patentee after: Hunan Aikewei Semiconductor Equipment Co.,Ltd. Address before: 410006 36 Yuelu District Lu Shan Road, Changsha, Hunan Patentee before: HUNAN NORMAL University |
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Denomination of invention: Optical spin Hall effect sensor and its equipment Granted publication date: 20211102 Pledgee: Agricultural Bank of China Limited Changsha Wangcheng District sub branch Pledgor: Hunan Aikewei Semiconductor Equipment Co.,Ltd. Registration number: Y2025980005223 |
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Granted publication date: 20211102 Pledgee: Agricultural Bank of China Limited Changsha Wangcheng District sub branch Pledgor: Hunan Aikewei Semiconductor Equipment Co.,Ltd. Registration number: Y2025980005223 |
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