CN113270538A - Infrared detector sensitive element based on nano infrared absorption layer and preparation method thereof - Google Patents
Infrared detector sensitive element based on nano infrared absorption layer and preparation method thereof Download PDFInfo
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
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- 229910021392 nanocarbon Inorganic materials 0.000 claims description 2
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 claims description 2
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Selection of materials
Abstract
The invention discloses an infrared detector sensitive element based on a nano infrared absorption layer and a preparation method thereof. The infrared detector sensitive element sequentially comprises an infrared sensitive absorption layer, an upper electrode connecting layer, a pyroelectric thin layer, a lower electrode connecting layer and a lower electrode layer from top to bottom, wherein the infrared sensitive absorption layer is a nano infrared absorption layer with a nano cluster structure. The preparation method comprises the following steps: sequentially depositing an upper electrode connecting layer and an upper electrode layer on the pyroelectric thin film by adopting a direct-current magnetron sputtering or thermal evaporation coating technology; then, a lower electrode connecting layer and a lower electrode layer are sequentially deposited on the reverse side of the pyroelectric crystal sheet; adhering the pyroelectric crystal slice to a substrate support, and patterning the nano infrared absorption material by using a spin coating, screen printing or spraying method to prepare an infrared sensitive absorption layer; and scribing and dividing the array device by using a mechanical scribing machine or a laser scribing technology to obtain a finished product of the single infrared detector sensitive element.
Description
Technical Field
The invention relates to an infrared detector sensitive element based on a nano infrared absorption layer and a preparation method thereof, belonging to the technical field of infrared detectors.
Background
Along with the development of the satellite infrared remote sensing technology, the pyroelectric infrared detector in China enters a development stage. The infrared sensor has the advantages of low price, light weight, wide spectral responsivity, high response speed, high cost performance and the like, is widely applied to the fields of military affairs, industry, security medical treatment, scientific research, environmental monitoring and the like, and becomes one of the hot spots of the research in the current infrared technical field.
For example, in the field of gas detection, compared with the conventional method, the infrared gas sensor has the characteristics of uninterrupted measurement, rapid reaction, no pollution, wide measurement range, capability of detecting various gases, high sensitivity and the like, so that the infrared sensor becomes the first choice in the gas detection industry, wherein the core element of the infrared gas sensor is an infrared detector.
Two key factors influencing the performance of the infrared detector are provided, one factor is the structure of the detector unit, and the other factor is the performance of the pyroelectric material and the absorption material. The existing infrared detector is mostly prepared by adopting single crystal, ceramic or thin film materials. Chinese patent CN 102830086A discloses an infrared detector sensitive element based on a black silicon absorption layer and a multilayer combined film structure, wherein a PT/PZT/PT film of the multilayer combined film structure is used as a pyroelectric film material, and a cone forest structure silicon black absorption layer is obtained by adopting bonding, corrosion, vacuum pump evaporation technology and laser scanning bombardment technology to form an infrared detector sensitive element, so that the detection performance of the pyroelectric film type detector is further improved. The patent adopts a multilayer composite film as the pyroelectric thin layer, the material is difficult to process, the strength is not enough, the prepared silicon black has complex process and high cost, the bonding property with a substrate is poor, the capability of resisting the external severe environment is weaker, and the industrial process control is relatively difficult to achieve. Ceramic pyroelectric transistors are lower in cost but slower in response. The pyroelectric crystal has high pyroelectric coefficient, low dielectric loss and best performance, and most pyroelectric detectors are made of single crystal. In recent years, the selected single crystal pyroelectric materials mostly adopt a mixed integration method, the crystal thickness is not easy to control, the processing technology is complex, and the cost is high.
Therefore, how to improve the application of the existing pyroelectric crystal sensitive element on the infrared detector to achieve better detection performance is a major research direction of researchers in the field at present.
Disclosure of Invention
Aiming at the defects of the existing pyroelectric infrared detection equipment, the invention aims to provide an infrared detector sensitive element based on a nano infrared absorption layer, and the infrared detector sensitive element has the advantages of easiness in processing, low cost, strong capability of resisting the influence of the external severe environment, higher thermal response performance and the like.
The invention also aims to provide a preparation method of the infrared detector sensitive element, which can ensure the integrity of an original wafer through process control, and has better bonding strength with a nano infrared absorption material and excellent heat absorption performance.
In order to achieve the purpose, the invention adopts the following technical scheme:
the sensitive element comprises an infrared sensitive absorption layer, an upper electrode connecting layer, a pyroelectric thin layer, a lower electrode connecting layer and a lower electrode layer from top to bottom in sequence, wherein the infrared sensitive absorption layer is a nano infrared absorption layer with a nanocluster structure.
Furthermore, the thickness of the infrared sensitive absorption layer is less than or equal to 10 μm, so that the stability of the infrared absorption layer is ensured; the thicknesses of the upper electrode layer and the lower electrode layer are respectively 150-300nm, so that the subsequent electrodes are ensured to be smoothly wired; the thicknesses of the upper electrode connecting layer and the lower electrode connecting layer are respectively 10-30nm, so that firm combination of the electrode and the substrate is ensured; the thickness of the pyroelectric thin layer is 20-60 mu m, so that excellent pyroelectric conversion efficiency is conveniently obtained.
Further, the material of the upper electrode layer is any one or more of metal A1, Au, Ag and Cu; the material of the upper electrode connecting layer is any one or more of metal Ti, W and Cr.
Furthermore, the pyroelectric thin layer is a pyroelectric crystal material sheet with two polished surfaces, and the pyroelectric crystal material is a lithium tantalate crystal, a lithium niobate crystal, a barium strontium niobate crystal or a lithium sulfate crystal.
Furthermore, the material of the lower electrode connecting layer is any one or more of metal Ti, metal W and metal Cr; the lower electrode layer is made of any one or more of metal Al, Au, Ag and Cu.
A preparation method of the infrared detector sensitive element based on the nano infrared absorption layer comprises the following steps:
1) putting the pyroelectric crystal slice with two polished surfaces on a substrate holder, cleaning the pyroelectric crystal slice with acetone, alcohol and deionized water in sequence, and slightly drying the pyroelectric crystal slice with nitrogen;
2) sequentially depositing an upper electrode connecting layer and an upper electrode layer on the pyroelectric thin film by adopting a direct-current magnetron sputtering or thermal evaporation coating technology;
3) depositing a lower electrode connecting layer and a lower electrode layer on the reverse side of the pyroelectric crystal sheet in sequence by adopting a direct current magnetron sputtering or thermal evaporation coating technology;
4) fully mixing the adhesive with the nano material to prepare a nano infrared absorption material;
5) adhering the pyroelectric crystal slice to a substrate support, and patterning the nano infrared absorption material by using a spin coating, screen printing or spraying method to prepare an infrared sensitive absorption layer;
6) and scribing and cutting the array device by using a mechanical scribing machine or a laser scribing technology, and sequentially cleaning the array device by using acetone, ethanol and deionized water to obtain a finished product of the single infrared detector sensitive element.
Wherein, in the step 4), the nano material is nano carbon powder, carbon nano tubes or metal nano particles, and the particle size is 25-75 nm.
The invention has the beneficial effects that:
compared with the prior art, the infrared sensitive absorption layer is made of the nano small cluster nano mixed material layer, the heat absorption coefficient is high, the infrared sensitive absorption layer has excellent heat absorption performance, the processing technology is simple, the cost is low, the heat response performance of the sensitive element is improved, and a better detection effect can be achieved. The infrared detector sensitive element can be used for constructing a high-performance infrared detector and plays an important role in monitoring in the fields of environmental safety, health care, industrial safety and the like.
Drawings
Fig. 1 is a schematic structural diagram of a sensor of the present invention.
FIG. 2 is a flow chart of the process for manufacturing the sensor of the present invention.
FIG. 3 is an SEM image of the surface film of the susceptor obtained in the example of the present invention.
Fig. 4 is an absorption curve of the sensor obtained in the example of the invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples. The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention.
Examples
As shown in fig. 1, an infrared detector sensitive element based on a nano-absorption layer includes, from top to bottom, an infrared sensitive absorption layer 1, an upper electrode layer 2, an upper electrode connection layer 3, a pyroelectric thin layer 4, a lower electrode connection layer 5, and a lower electrode layer 6. The infrared sensitive absorption layer 1 is a nano infrared absorption layer with a nano small cluster structure, and the thickness is 5 mu m. The material of the upper electrode layer 2 is a metal Cu film with a thickness of 300 nm. The material of the upper electrode connecting layer 3 is a metal Ti film, and the thickness of the metal Ti film is 15 nm. The pyroelectric thin layer 4 is a pyroelectric lithium tantalate crystal thin sheet with two polished surfaces, and the thickness of the pyroelectric thin layer is 25 mu m. The material of the lower electrode connecting layer 5 is a Ti metal film, and the thickness of the Ti metal film is 15 nm. The material of the lower electrode layer 6 is a metal A1 film with a thickness of 300 nm.
As shown in fig. 2, the preparation method of the infrared detector sensitive element based on the nano infrared absorption layer comprises the following preparation steps:
1) putting a double-sided polished pyroelectric crystal sheet with the thickness of 40 mu m on a substrate holder, sequentially cleaning the pyroelectric crystal sheet by using acetone, alcohol and deionized water, and slightly drying the pyroelectric crystal sheet by using nitrogen;
2) sequentially depositing an upper electrode connecting layer and an upper electrode layer on the pyroelectric thin film by adopting a magnetron sputtering thin film process, wherein the upper electrode connecting layer is made of a metal Ti thin film; the thickness is 15nm, the upper electrode layer material is a metal A1 film, and the thickness is 300 nm;
3) a lower electrode connecting layer and a lower electrode layer are sequentially deposited on the reverse side of the pyroelectric crystal sheet by adopting a magnetron sputtering film process, wherein the lower electrode connecting layer is made of a metal Ti film with the thickness of 15nm, and the lower electrode layer is made of a metal Au film with the thickness of 300 nm;
4) fully mixing the adhesive with carbon powder with the particle size of 50nm and a carbon tube to prepare a nano infrared absorption material;
5) bonding the pyroelectric crystal slice to a substrate holder, and patterning the nano infrared absorption material by a spraying method to prepare an infrared sensitive absorption layer, wherein the thickness of the infrared sensitive absorption layer is 5 microns;
6) and scribing and dividing the array device by using a mechanical scribing machine, and sequentially cleaning the array device by using acetone, ethanol and deionized water to obtain a finished product of the single infrared detector sensitive element. Fig. 3 shows an SEM image of the surface film of the infrared detector sensitive element based on the nano infrared absorption layer obtained in this embodiment, and it can be known that the infrared detector sensitive element with the nano infrared absorption layer can be obtained by using the infrared detector sensitive element preparation method provided in this embodiment, and the nano structure of the surface infrared absorption layer is uniform and stable;
7) the prepared infrared detector sensitive element is tested by an infrared spectrometer to obtain an absorption rate curve of the sensitive element, as shown in fig. 4. It can be seen from the figure that the absorptivity of the infrared detector sensitive element based on the nano infrared absorption layer obtained in the embodiment reaches more than 92%, and the infrared detector sensitive element has high infrared absorptivity and good response performance.
Claims (7)
1. The infrared detector sensitive element based on the nano infrared absorption layer is characterized by sequentially comprising an infrared sensitive absorption layer, an upper electrode connecting layer, a pyroelectric thin layer, a lower electrode connecting layer and a lower electrode layer from top to bottom, wherein the infrared sensitive absorption layer is a nano infrared absorption layer with a nanocluster structure.
2. The nano infrared absorbing layer based infrared detector sensing element as claimed in claim 1, wherein the thickness of the infrared sensitive absorbing layer is less than or equal to 10 μm; the thicknesses of the upper electrode layer and the lower electrode layer are respectively 150-300 nm; the thicknesses of the upper electrode connecting layer and the lower electrode connecting layer are respectively 10-30 nm; the thickness of the pyroelectric thin layer is 20-60 mu m.
3. The infrared detector sensitive element based on the nano infrared absorption layer as claimed in claim 1, wherein the material of the upper electrode layer is any one or more of metal Al, Au, Ag and Cu; the material of the upper electrode connecting layer is any one or more of metal Ti, W and Cr.
4. The nir absorbing layer-based ir detector sensor according to claim 1, wherein the thin pyroelectric layer is a double-side polished thin pyroelectric crystal material sheet, and the pyroelectric crystal material is lithium tantalate crystal, lithium niobate crystal, barium strontium niobate crystal or lithium sulfate crystal.
5. The infrared detector sensitive element based on the nano infrared absorption layer as claimed in claim 1, wherein the material of the lower electrode connection layer is any one or more of metals of Ti, W and Cr; the lower electrode layer is made of any one or more of metal Al, Au, Ag and Cu.
6. The preparation method of the infrared detector sensitive element based on the nanometer infrared absorption layer as claimed in any one of claims 1 to 5, characterized by comprising the following steps:
1) putting the pyroelectric crystal slice with two polished surfaces on a substrate holder, cleaning the pyroelectric crystal slice with acetone, alcohol and deionized water in sequence, and slightly drying the pyroelectric crystal slice with nitrogen;
2) sequentially depositing an upper electrode connecting layer and an upper electrode layer on the pyroelectric thin film by adopting a direct-current magnetron sputtering or thermal evaporation coating technology;
3) depositing a lower electrode connecting layer and a lower electrode layer on the reverse side of the pyroelectric crystal sheet in sequence by adopting a direct current magnetron sputtering or thermal evaporation coating technology;
4) fully mixing the adhesive with the nano material to prepare a nano infrared absorption material;
5) adhering the pyroelectric crystal slice to a substrate support, and patterning the nano infrared absorption material by using a spin coating, screen printing or spraying method to prepare an infrared sensitive absorption layer;
6) and scribing and cutting the array device by using a mechanical scribing machine or a laser scribing technology, and sequentially cleaning the array device by using acetone, ethanol and deionized water to obtain a finished product of the single infrared detector sensitive element.
7. The method for preparing the infrared detector sensitive element based on the nano infrared absorption layer as claimed in claim 6, wherein the nano material is nano carbon powder, carbon nano tube or metal nano particle with a particle size of 25-75 nm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN103088297A (en) * | 2011-10-28 | 2013-05-08 | 中国原子能科学研究院 | Method and device for preparing silver black nanoparticles on porous surface of nuclear track |
| CN104458006A (en) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector sensitive element and manufacturing method thereof |
| CN108251807A (en) * | 2018-01-02 | 2018-07-06 | 中国科学院宁波材料技术与工程研究所 | The amorphous carbon-base film of nanometer grade thickness is as the application of infrared absorbing material and the preparation method of amorphous carbon-base film |
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2020
- 2020-12-29 CN CN202011596434.4A patent/CN113270538A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN103088297A (en) * | 2011-10-28 | 2013-05-08 | 中国原子能科学研究院 | Method and device for preparing silver black nanoparticles on porous surface of nuclear track |
| CN104458006A (en) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector sensitive element and manufacturing method thereof |
| CN108251807A (en) * | 2018-01-02 | 2018-07-06 | 中国科学院宁波材料技术与工程研究所 | The amorphous carbon-base film of nanometer grade thickness is as the application of infrared absorbing material and the preparation method of amorphous carbon-base film |
Non-Patent Citations (1)
| Title |
|---|
| MAHDI RAHMANSHAHI等: "Infrared photodetectors based on graphene metal nano clusters", 《PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS》, pages 173 - 179 * |
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