CN113270491B - 一种具有高灵敏度的压力传感器及其制备方法 - Google Patents

一种具有高灵敏度的压力传感器及其制备方法 Download PDF

Info

Publication number
CN113270491B
CN113270491B CN202110457934.8A CN202110457934A CN113270491B CN 113270491 B CN113270491 B CN 113270491B CN 202110457934 A CN202110457934 A CN 202110457934A CN 113270491 B CN113270491 B CN 113270491B
Authority
CN
China
Prior art keywords
layer
gan
type
type doped
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110457934.8A
Other languages
English (en)
Other versions
CN113270491A (zh
Inventor
仇志军
杨强强
贺瑞坡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Youyun Information Technology Suzhou Co ltd
Original Assignee
Youyun Information Technology Suzhou Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youyun Information Technology Suzhou Co ltd filed Critical Youyun Information Technology Suzhou Co ltd
Priority to CN202110457934.8A priority Critical patent/CN113270491B/zh
Publication of CN113270491A publication Critical patent/CN113270491A/zh
Application granted granted Critical
Publication of CN113270491B publication Critical patent/CN113270491B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H10N30/306—Cantilevers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本发明公开了一种具有高灵敏度的压力传感器及其制备方法。本发明压力传感器包括：Si衬底上依次沉积的GaN缓冲层和n型掺杂GaN层；n型掺杂GaN层上沉积的p型掺杂GaN层；p型掺杂GaN层上沉积的n型掺杂AlGaN层；在n型AlGaN上淀积的一层AlN；选择性刻蚀部分AlN层、p型GaN层和n型GaN层形成的发射极、基极和集电极的电极接触区；选择性刻蚀n‑AlGaN/p‑GaN/n‑GaN外延层以及GaN缓冲层形成的悬空AlN悬梁臂。本发明利用悬梁臂灵敏的压力传导效应将压力信号转换成电信号，并输入双极性晶体管结构，利用功放作用将信号适当放大输出，使得该发明具有极高的灵敏度、良好的环境适应性等优点。

Description

一种具有高灵敏度的压力传感器及其制备方法
技术领域
本发明属于压力传感器技术领域，具体涉及一种具有高灵敏度的压力传感器及其制备方法。
背景技术
GaN作为第三代宽禁带半导体材料之一，其禁带宽度高达3.4 eV，具有高击穿电场、快电子饱和速度、可高温工作等优势，这些特点使其在传感器、探测器、发光器件、光催化、热电器件、压电器件等方面具有极大的应用前景，因此，近些年来GaN材料受到了越来越多的关注。
在GaN基器件中，由于AlGaN/GaN异质结自身具有很强的自发极化效应和压电极化效应，会在异质界面形成高达1018 cm-3的二维电子气（two dimensional electron gas,2DEG）。人们已开始利用高密度的AlGaN/GaN异质结二维电子气研发设计出了各种应用需求的电子器件，并且针对未来更多的应用开展新结构新器件的设计和研发。鉴于大多数传统的压力传感器是通过压力改变载流子浓度来实现压力传感，且存在灵敏度低、反应慢等缺点。因此，将GaN\AlGaN异质结应用到压力传感将会是一个很好的应用前景。
发明内容
基于上述提到的发展需求，本发明的目的在于提出一种具有高灵敏度的压力传感器及其制备方法，不仅能够满足高灵敏的压力传感，而且能够使得压力传感器工作在高温、高压、高等级电磁辐射等电力复杂环境中。
本发明提出的具有高灵敏度的压力传感器，包括：
（1）在Si衬底上依次沉积的GaN缓冲层和n型掺杂GaN层；
（2）在n型掺杂GaN层上沉积的p型掺杂GaN层；
（3）在p型掺杂GaN层上沉积的n型掺杂AlGaN层；
（4）在n型AlGaN上淀积的一层AlN；
（5）分别选择性刻蚀部分AlN层、p型GaN层和n型GaN层形成的发射极、基极和集电极的电极接触区；
（6）选择性刻蚀n-AlGaN/p-GaN/n-GaN外延层以及GaN缓冲层材料形成的悬空的AlN悬梁臂。
优选地，（1）中所述的GaN缓冲层厚度为0.2μm ~ 4μm；n型掺杂GaN层厚度为0.5μm~ 2μm，掺杂浓度为5×1015 cm-3~5×1016 cm-3（掺杂元素为硅）。
优选地，（2）中所述的p型掺杂GaN层厚度为100 nm ~ 300 nm，掺杂浓度为1×1018cm-3~ 5×1018cm-3（掺杂元素为镁）。
优选地，（3）中所述的n型掺杂AlGaN层厚度为0.2μm ~ 1μm，掺杂浓度为5×1015cm-3~5×1016 cm-3（掺杂元素为硅）。
优选地，（4）中所述的AlN层厚度为0.1μm ~ 0.5μm。
优选地，由上述方法制得的高灵敏度的压力传感器。
本发明提出的具有高灵敏度的压力传感器的制备方法，具体步骤如下：
（1）在Si衬底上依次沉积GaN缓冲层和n型掺杂GaN层；
（2）在n型掺杂GaN层上沉积p型掺杂GaN层；
（3）在p型掺杂GaN层上沉积n型掺杂AlGaN层；
（4）在n型AlGaN上淀积一层AlN；
（5）分别选择性刻蚀部分AlN层、p型GaN层和n型GaN层，形成发射极、基极和集电极的电极接触区；
（6）选择性刻蚀n-AlGaN/p-GaN/n-GaN外延层以及GaN缓冲层材料，形成的悬空的AlN悬梁臂。
本发明的结构示意图如图1和图2所示，在测试状态下，基极和发射极通过电极互联，而集电极是最终的信号输出端。在结构中AlN悬梁臂始终处在悬空状态，当在悬梁臂一端施加压力时，压力传导至AlGaN/GaN异质结，受压电极化效应的作用，会在基极端与发射极端之间形成有一个电信号。利用双极性晶体管具有的放大作用，将该压电信号进行倍增放大，并在集电极端口输出最终的压电信号，而且这一晶体管放大作用能够极大地提高传感器的灵敏度、响应度等性能。
本发明的优点在于：
（1）本发明是以GaN器件为基础，具有耐温、耐压以及抗辐射等优点，实现了在高温、高压等复杂环境下的工作；
（2）本发明利用了双极性晶体管的放大作用，实现对弱信号的放大，提高了传感器的灵敏度；
（3）本发明具有较快的响应速度和较高的灵敏度。
本发明利用悬梁臂灵敏的压力传导效应将压力信号转换成电信号，并输入GaN/AlGaN外延材料形成的双极性晶体管结构，然后通过双极性晶体管的功放作用将信号适当放大输出，使得该发明具有极高的灵敏度、良好的环境适应性等优点。
附图说明
图1为本发明的俯视示意图。
图2为本发明的二维剖面结构示意图。
图3为本发明的制备工艺流程图。
图中标号：1为Si衬底，2为GaN缓冲层，3为n型GaN层，4为p型的GaN层，5为n型掺杂的AlGaN层，6为AlN悬梁臂，7为集电极金属电极，8为基极金属电极，9为发射极金属电极。
具体实施方式
下面将结合附图和实施例，对本发明的技术方案进行进一步描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例
本实施例提供一种高灵敏度压力传感器及其制备方法，器件的剖面如图2所示，它由Si衬底1、GaN缓冲层2、n型GaN层3、p型的GaN层4、n型掺杂的AlGaN层5、AlN悬梁臂6、集电极金属电极7、基极金属电极8和发射极金属电极9组成。
具体制备工艺流程如图3所示，包括：
（1）取样Si衬底1，并用标准RCA溶液对其表面进行5~15分钟清洗。
（2）在Si衬底之上利用分子束外延技术（MBE）生长1μm厚的GaN缓冲层2，反应气体源为三甲基镓(TMGa)和氨气(NH3)，生长温度为600oC～800oC，生长时间30 ~60分钟，气体流量为：50～200ml/min，生长气压：10～50Pa。
（3）在GaN缓冲层2上，利用MBE技术生长0.5μm厚掺杂浓度为5×1015 cm-3的n型GaN层3，掺杂源为SiH4，生长条件同上，掺杂气体流量为：10～50ml/min。
（4）在n型GaN层3上，利用MBE技术生长100 nm厚掺杂浓度为1×1018 cm-3的p型GaN层4，掺杂源为高纯度（>99.9%）金属固态镁，其他生长条件同上。
（5）在p型GaN层4上，利用同样MBE 技术生长0.25 μm厚掺杂浓度为5×1015 cm-3的n型Al0.2Ga0.8N层5，反应源为固态金属Ga、三甲基铝(TMAI)和NH3，掺杂源为SiH4，生长温度500oC～800oC，生长时间30～60分钟，生长气压10～40Pa，TMAI和NH3流量为40 ml/min～100ml/min，SiH4气体流量为：10～50ml/min。
（6）利用化学气相沉积（CVD）技术在Al0.2Ga0.8N层5上，淀积200nm厚的AlN介质层6，反应气体源为三甲基铝(TMAI)和氨气(NH3)。生长温度为400oC～600oC，生长时间30 ~60分钟。生长结束之后，对衬底进行10 ~15分钟热退火，退火温度为500oC～800oC。
（7）通过光刻、离子刻蚀等技术，在外延层材料上刻蚀出基极、集电极和发射极的电极接触区域，刻蚀气体为Cl2，刻蚀功率50～200W，刻蚀气压10～50Pa，气体流量为50 ml/min～200 ml/min，刻蚀时间20～60分钟。
（8）利用磁控溅射方法淀积金属电极Ti/Au7、8和9。高纯Ti和Au分别作为溅射靶材，溅射的本底真空度10-5～ 10-7 Pa，溅射气体Ar的工作气压为0.1～10 Pa，溅射功率为20～100 W，溅射时间30～120分钟。然后利用光刻和湿法腐蚀形成电极图形，腐蚀溶液为HNO3和HCl混合液体，腐蚀时间1～10分钟。
（9）通过湿法腐蚀工艺，选择性去除AlN下面的外延材料并形成一个悬梁臂结构，腐蚀溶液为1:1的KOH和NaOH混合液体，腐蚀时间3～60分钟。
最后说明的是，以上优选实施例仅用以说明本发明的技术方案而非限制，尽管通过上述优选实施例已经对本发明进行了详细的描述，但本领域技术人员应当理解，可以在形式上和细节上对其作出各种各样的改变，而不偏离本发明权利要求书所限定的范围。

Claims (6)

1.一种具有高灵敏度的压力传感器，其特征在于，包括：
（1）在Si衬底上依次沉积的GaN缓冲层和n型掺杂GaN层；
（2）在n型掺杂GaN层上沉积的p型掺杂GaN层；
（3）在p型掺杂GaN层上沉积的n型掺杂AlGaN层；
（4）在在n型AlGaN上淀积的一层AlN；
（5）分别选择性刻蚀部分AlN层、p型GaN层和n型GaN层形成的发射极、基极和集电极的电极接触区；
（6）选择性刻蚀n-AlGaN/p-GaN/n-GaN外延层以及GaN缓冲层材料形成的悬空的AlN悬梁臂。
2.根据权利要求1所述的高灵敏度的压力传感器，其特征在于，（1）中所述的GaN缓冲层厚度为0.2μm ~ 4μm；n型掺杂GaN层厚度为0.5μm ~ 2μm，掺杂浓度为5×1015 cm-3~5×1016 cm-3，掺杂元素为硅。
3.根据权利要求1所述的高灵敏度的压力传感器，其特征在于，（2）中所述的p型掺杂GaN层厚度为100 nm ~ 300 nm，掺杂浓度为1×1018 cm-3~ 5×1018cm-3，掺杂元素为镁。
4.根据权利要求1所述的高灵敏度的压力传感器，其特征在于，（3）中所述的n型掺杂AlGaN层厚度为0.2μm ~ 1μm，掺杂浓度为5×1015 cm-3~5×1016 cm-3，掺杂元素为硅。
5.根据权利要求1所述的高灵敏度的压力传感器，其特征在于，（4）中所述的AlN层厚度为0.1μm ~ 0.5μm。
6.一种如权利要求1-5之一所述的高灵敏度的压力传感器的制备方法，其特征在于，具体步骤如下：
（1）在Si衬底上依次沉积GaN缓冲层和n型掺杂GaN层；
（2）在n型掺杂GaN层上沉积p型掺杂GaN层；
（3）在p型掺杂GaN层上沉积n型掺杂AlGaN层；
（4）在n型AlGaN上淀积一层AlN；
（5）分别选择性刻蚀部分AlN层、p型GaN层和n型GaN层形成发射极、基极和集电极的电极接触区；
（6）选择性刻蚀n-AlGaN/p-GaN/n-GaN外延层以及GaN缓冲层材料形成悬空的AlN悬梁臂。
CN202110457934.8A 2021-04-27 2021-04-27 一种具有高灵敏度的压力传感器及其制备方法 Active CN113270491B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110457934.8A CN113270491B (zh) 2021-04-27 2021-04-27 一种具有高灵敏度的压力传感器及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110457934.8A CN113270491B (zh) 2021-04-27 2021-04-27 一种具有高灵敏度的压力传感器及其制备方法

Publications (2)

Publication Number Publication Date
CN113270491A CN113270491A (zh) 2021-08-17
CN113270491B true CN113270491B (zh) 2024-06-18

Family

ID=77229443

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110457934.8A Active CN113270491B (zh) 2021-04-27 2021-04-27 一种具有高灵敏度的压力传感器及其制备方法

Country Status (1)

Country Link
CN (1) CN113270491B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114252815B (zh) * 2021-11-24 2023-08-29 清华大学深圳国际研究生院 磁性悬臂梁传感器及其制作方法和测量装置、成像系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545861A (zh) * 2018-10-30 2019-03-29 杭州电子科技大学 一种多谐GaN/AlGaN共振隧穿二极管
CN110729394A (zh) * 2019-10-12 2020-01-24 深圳第三代半导体研究院 一种负阻式GaN压力传感器及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014204664A1 (de) * 2014-03-13 2015-09-17 Robert Bosch Gmbh Drucksensor und Verfahren zum Herstellen des Drucksensors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545861A (zh) * 2018-10-30 2019-03-29 杭州电子科技大学 一种多谐GaN/AlGaN共振隧穿二极管
CN110729394A (zh) * 2019-10-12 2020-01-24 深圳第三代半导体研究院 一种负阻式GaN压力传感器及其制备方法

Also Published As

Publication number Publication date
CN113270491A (zh) 2021-08-17

Similar Documents

Publication Publication Date Title
CN102244135B (zh) 一种pin倒置结构紫外雪崩光电探测器及其制备方法
CN103165777B (zh) 具有梯形结构的n型插入层的led外延片及其生长方法
Kim et al. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks
CN113270491B (zh) 一种具有高灵敏度的压力传感器及其制备方法
CN103400914B (zh) 一种提高氮化镓基电流扩展的外延结构及其生长方法
CN109494275A (zh) 一种AlGaN基日盲紫外光电晶体管探测器及其制作方法
CN110729394A (zh) 一种负阻式GaN压力传感器及其制备方法
CN109524522A (zh) 一种GaN基发光二极管外延片及其制备方法
CN109285914B (zh) 一种AlGaN基紫外异质结光电晶体管探测器及其制备方法
Madhavi et al. High room-temperature hole mobility in Ge 0.7 Si 0.3/Ge/Ge 0.7 Si 0.3 modulation-doped heterostructures
CN110890457B (zh) 集成背面垂直型和正面水平型三维磁场探测功能的高温霍尔传感器及其制作方法
CN115692510A (zh) 基于二维电子气沟道结构的二维磁敏传感器及其制备方法
CN105051873B (zh) 异质结双极晶体管
CN111180527A (zh) 一种GaN基PN二极管及其制备方法
CN110911548B (zh) 具有工作温度实时监控功能的高温三维霍尔传感器及其制作方法
CN114678439B (zh) 一种对称叉指结构的2deg紫外探测器及制备方法
CN109713083A (zh) 一种原位生长Al等离激元提高AlGaN基PIN型探测器性能的方法
CN214279994U (zh) 一种PBn型InAsSb红外探测器材料结构
US20040113143A1 (en) Semiconductor device having a lattice-mismatched semiconductor layer on a substrate
CN106169523B (zh) 一种采用L-MBE和MOCVD技术在Si衬底上生长的LED外延片及其制备方法
CN113964003A (zh) 一种具有纳米管结构的GaN光电阴极及其制备方法
CN204668309U (zh) 基于GaN的光电集成器件及其外延结构
CN111370509B (zh) 一种具有石墨烯插入层的AlGaN基紫外探测器及其制备方法
CN108376704B (zh) 一种高频氮化镓/石墨烯异质结热电子晶体管的制备方法
CN111129287A (zh) 一种GaN基磁感应器及制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant