CN113259013B - Single-wavelength 100G long-distance optical module - Google Patents
Single-wavelength 100G long-distance optical module Download PDFInfo
- Publication number
- CN113259013B CN113259013B CN202110517410.3A CN202110517410A CN113259013B CN 113259013 B CN113259013 B CN 113259013B CN 202110517410 A CN202110517410 A CN 202110517410A CN 113259013 B CN113259013 B CN 113259013B
- Authority
- CN
- China
- Prior art keywords
- wavelength
- optical module
- long
- laser
- modulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
Abstract
The application relates to the technical field of communication, and provides a single-wavelength 100G long-distance optical module which comprises a digital signal processor, a transmitting end and a receiving end; the transmitting end comprises a modulator and a laser, the line transmitting end of the digital signal processor is connected with the modulator, the modulator is connected with the laser, the laser is used for generating single-wavelength laser carrying optical signals, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers; and the silicon germanium avalanche photodiode at the receiving end is used for receiving the single-wavelength laser carrying the optical signal, converting the optical signal into an electric signal and transmitting the electric signal to the linear transconductance amplifier, and the linear transconductance amplifier is connected with the line receiving end of the digital signal processor. The single-wavelength 100G long-distance optical module provided by the application can greatly reduce the number of transmitting and receiving devices and optical components while ensuring high-speed and long-distance transmission of optical signals, thereby reducing the cost.
Description
Technical Field
The application relates to the technical field of communication, in particular to a single-wavelength 100G long-distance optical module.
Background
With the development of the internet and data centers, under the condition that the requirement on transmission bandwidth is higher and higher, the optical module is required to have a certain transmission rate and transmission distance. However, the existing single-wavelength optical module has a limited transmission rate, for example, the LWDM4 optical module and the LWDM4 optical module use four wavelengths of laser light to synthesize an optical signal with a transmission rate of 100G, so that four lasers and corresponding transceiver devices are required, and the cost is high.
In order to reduce the number of transmitting and receiving devices and optical components, a PAM4 optical module is developed in the prior art, a PAM4 optical module can realize an optical signal with a single wavelength of 100G, and then the transmission distance of the PAM4 optical module is greatly limited when the cost is reduced, and only hundreds of meters or kilometers can be transmitted. In many long-distance transmission occasions, the LWDM4 optical module with four wavelengths still has to be used.
Disclosure of Invention
In order to provide a miniaturized optical module and ensure that optical signals can be transmitted at a high rate and in a long distance, the long-distance transmission of 30KM to 40KM of 100G optical signals is met. The application provides a single-wavelength 100G long-distance optical module. The method specifically comprises the following steps:
a single wavelength 100G long-range optical module, comprising: the device comprises a digital signal processor, a transmitting end and a receiving end; the transmitting terminal comprises a modulator and a laser, the line transmitting terminal of the digital signal processor is connected with the modulator, the modulator is connected with the laser and used for converting the electric signals into optical signals, the laser is used for generating single-wavelength laser carrying the optical signals, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers.
The receiving end comprises a silicon germanium avalanche photodiode and a linear transconductance amplifier, the silicon germanium avalanche photodiode is used for receiving single-wavelength laser carrying optical signals and converting the optical signals into electric signals to be transmitted to the linear transconductance amplifier, and the linear transconductance amplifier is connected with the line receiving end of the digital signal processor.
Optionally, the modulator is an electro-absorption modulator or MZ modulator, and the driver modulation baud rate of the modulator is higher than 50 Gbaud.
Optionally, the laser wavelength ranges from 1308.28 nm to 1310 nm, so as to realize a single fiber transmission distance greater than 30 km.
Optionally, the silicon germanium avalanche photodiode has a reverse bias voltage of 12 to 24 volts.
Optionally, the digital signal processor further comprises a KP code pattern forward error corrector.
Optionally, the digital signal processor further comprises a main receiver for acquiring the electrical signal.
Optionally, the digital signal processor further comprises a main transmitter for outputting the electrical signal.
Optionally, the optical module is in an SFP-DD small package or a QSFP small package.
Optionally, the optical module further includes a heat sink, and the heat sink and the integrated block of the digital signal processor are filled with a heat conducting material.
Optionally, the heat sink is a copper or copper alloy heat sink.
As can be seen from the above technical solutions, the present application provides a single-wavelength 100G long-distance optical module, including: the device comprises a digital signal processor, a transmitting end and a receiving end; the transmitting end comprises a modulator and a laser, the line transmitting end of the digital signal processor is connected with the modulator, the modulator is connected with the laser and is used for converting the electric signal into an optical signal, the laser is used for generating single-wavelength laser carrying the optical signal, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers; the receiving end comprises a silicon germanium avalanche photodiode and a linear transconductance amplifier, the silicon germanium avalanche photodiode is used for receiving single-wavelength laser carrying optical signals and converting the optical signals into electric signals to be transmitted to the linear transconductance amplifier, and the linear transconductance amplifier is connected with the line receiving end of the digital signal processor.
Compared with the traditional multi-wavelength long-distance optical module scheme, the optical module provided by the embodiment of the application greatly reduces the number of transmitting and receiving devices and optical components, thereby reducing the cost and ensuring that the optical signals can be transmitted at a high rate and in a long distance.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments are briefly described below, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic view of an overall structure of an optical module provided in an embodiment of the present application;
fig. 2 is a schematic signal conversion diagram of an optical module according to an embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following examples do not represent all embodiments consistent with the present application. But merely as exemplifications of embodiments consistent with certain aspects of the application, as detailed in the claims.
In order to provide a miniaturized optical module and ensure that an optical signal can be transmitted at a high rate and in a long distance, for example, a long-distance transmission of 30KM to 40KM is implemented for a 100G optical signal, an embodiment of the present invention provides a single-wavelength 100G long-distance optical module, and as shown in fig. 1, is a schematic diagram of an overall structure of an optical module provided in an embodiment of the present invention. The optical module includes: digital signal processor, transmitting terminal and receiving terminal.
The transmitting terminal comprises a modulator and a laser, the line transmitting terminal of the digital signal processor is connected with the modulator and used for outputting electric signals, the modulator is connected with the laser and used for converting the electric signals into optical signals, the laser is used for generating single-wavelength laser carrying the optical signals, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers.
In the practical use process, through tests, the single-wavelength 100G long-distance optical module provided by the embodiment of the application adopts single-wavelength laser with the wavelength of 1308.09 nanometers, the negative dispersion of 30km for transmission is-45.20532463 ps/nm, and the positive dispersion is 22.3625725 ps/nm; the single-wavelength laser with the wavelength of 1310.19 nanometers is adopted, the negative dispersion of transmitting 30km is-39.14337607 ps/nm, the positive dispersion is 28.10014381ps/nm, if the wavelength of the single-wavelength laser is 1308.09 nanometers to 1310.19 nanometers, the maximum differential group delay is 8.83ps, the differential group delay cost is 0.75 decibel, and the dispersion cost is 1 decibel, so that the dispersion range from-45 ps/nm to 25ps/nm is met.
In the optical module provided by the embodiment of the application, a TEC chip (semiconductor Cooler) is pre-installed in an application process, the peltier effect of the TEC is utilized to refrigerate or heat a laser, the optical module stabilizes the internal working temperature by controlling the current direction and the current magnitude of the TEC through an external circuit, a control circuit of the optical module selects two TEC control chips of a self-correcting and self-stabilizing zero drift amplifier in consideration of the advantage of hardware simulation PID, the TEC control chips have strong driving capability and high efficiency of 90%, the wide temperature range of a product is satisfied for working, and PID RC compensation network hardware is accurately configured according to the characteristics of the TECs in the optical module to realize proportional, derivative and integral operations; the whole design scheme fully utilizes the absolute advantages of high response speed of hardware PID and continuous (relative to software PID discrete processing) processing of feedback signals, a module can still always lock the target temperature and control the temperature within +/-0.5 ℃ of the target temperature even in an environment with severe temperature change, the wavelength of a laser chip selected by an optical module in the scheme drifts about 0.08nm when the temperature changes by 1 ℃, an external circuit accurately controls the working temperature of the optical module and indirectly locks the wavelength of a product within +/-0.04 nm of a narrow range, and further the product can still meet the dispersion requirement when being transmitted for a long distance of 30km to 40 km.
The modulator is an electro-absorption modulator or an MZ (Mach-Zehnder) modulator, and the modulation baud rate of a driver of the modulator is higher than 50 Gbaud.
Further, the laser wavelength range is 1308.28 nm to 1310 nm, so that the optical signal with a single fiber transmission distance of more than 30km still has high transmission quality.
In order to solve the problem that the dispersion cost is high in the process of transmitting an optical signal by an optical fiber, the dispersion cost is high when the speed is high and the distance is long, the dispersion cost is high, and the quality of the received optical signal is low. The requirement of high-speed long-distance transmission of 100G optical signals is met.
According to the single-wavelength 100G long-distance optical module, transmission of small-size optical module 100G optical signals is achieved for 30km to 40 km. Past 100G PAM4 optical modules could not transmit so far. Compared with the traditional multi-wavelength long-distance optical module scheme, the optical module provided by the embodiment of the application greatly reduces the number of transmitting and receiving devices and optical components, thereby reducing the cost and ensuring that optical signals can be transmitted at a high rate and in a long distance.
Further, in some embodiments of the present application, the silicon germanium avalanche photodiode includes an optical coupler, an optical reflector, an optical waveguide, and an active region; the optical coupler is used for receiving single-wavelength laser carrying optical signals, and the optical reflector is arranged below the optical coupler; the optical waveguide is used for guiding single-wavelength laser of an optical signal received by the optical coupler to an active area, and the active area is used for converting the optical signal into an electric signal. The reverse bias voltage of the silicon germanium avalanche photodiode is 12 to 24 volts. The voltage is far lower than that of the traditional silicon germanium avalanche photodiode, and the power consumption can be greatly reduced. As shown in fig. 2, a schematic signal conversion diagram of an optical module provided in this embodiment of the present application is provided, in some embodiments of the present application, the digital signal processor further includes a KP code forward error corrector, a main receiver, and a main transmitter, where the main receiver is configured to obtain an electrical signal, and the main transmitter is configured to output the electrical signal.
In the practical application process, after the electrical signal received by the main receiver is processed by the KP code type forward error corrector and amplified by the electroabsorption modulation laser driver, the laser is driven to convert the electrical signal into an optical signal, the optical signal is output in a long distance and received by another optical module, and the processing principle after the optical signal is received by the another optical module is as follows: the optical signal is transmitted into a silicon germanium avalanche photodiode, the silicon germanium avalanche photodiode converts the optical signal into an electrical signal, the electrical signal is amplified by a linear transconductance amplifier and transmitted into a digital signal processor, the electrical signal is processed by the KP code type forward error corrector, and the main transmitter outputs the electrical signal, for example, the electrical signal is transmitted to a switch chip.
Further, in order to ensure that the optical module provided in the embodiments of the present application can meet the requirement of miniaturization to adapt to the continuous improvement of the device port density, in some embodiments of the present application, the optical module is in an SFP-DD small package or a QSFP small package.
Furthermore, in the practical application process, the calorific value of the digital signal processor may exceed 1.5 watts, in order to ensure the stable operation of the device, the optical module further comprises a heat sink, the heat sink is a copper or copper alloy heat sink, and a gap is filled with a heat conduction material between the heat sink and the integrated block of the digital signal processor.
As can be seen from the foregoing technical solutions, an embodiment of the present application provides a single-wavelength 100G long-distance optical module, including: the device comprises a digital signal processor, a transmitting end and a receiving end; the transmitting end comprises a modulator and a laser, the linear transmitting end of the digital signal processor is connected with the modulator, the modulator is connected with the laser and used for converting the electric signal into an optical signal, the laser is used for generating single-wavelength laser carrying the optical signal, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers; the receiving end comprises a silicon germanium avalanche photodiode and a linear transconductance amplifier, the silicon germanium avalanche photodiode is used for receiving single-wavelength laser carrying optical signals and converting the optical signals into electric signals to be transmitted to the linear transconductance amplifier, and the linear transconductance amplifier is connected with the line receiving end of the digital signal processor.
Compared with the traditional multi-wavelength long-distance optical module scheme, the optical module provided by the embodiment of the application greatly reduces the number of transmitting and receiving devices and optical components, thereby reducing the cost and ensuring that the optical signals can be transmitted at a high rate and in a long distance.
The detailed description provided above is only a detailed description and/or an exemplary example under the general concept of the present application, and does not constitute a limitation to the scope of the present application. Various equivalent substitutions, modifications or improvements may be made to the embodiments and implementations of the disclosure by those skilled in the art without inventive faculty or departing from the spirit and scope of the disclosure, which fall within the scope of the disclosure. The protection scope of this application is subject to the appended claims.
Claims (10)
1. A single wavelength 100G long distance optical module, comprising: the device comprises a digital signal processor, a transmitting end and a receiving end;
the transmitting end comprises a modulator and a laser, the linear transmitting end of the digital signal processor is connected with the modulator, the modulator is connected with the laser and is used for converting an electric signal into an optical signal, the laser is used for generating single-wavelength laser carrying the optical signal, and the wavelength of the single-wavelength laser is 1308.09-1310.19 nanometers;
The receiving end comprises a silicon germanium avalanche photodiode and a linear transconductance amplifier, the silicon germanium avalanche photodiode is used for receiving single-wavelength laser carrying optical signals and converting the optical signals into electric signals to be transmitted to the linear transconductance amplifier, and the linear transconductance amplifier is connected with the line receiving end of the digital signal processor.
2. The single-wavelength 100G long-distance optical module of claim 1, wherein the modulator is an electro-absorption modulator or MZ modulator, and a driver modulation baud rate of the modulator is higher than 50 Gbaud.
3. The single-wavelength 100G long-distance optical module as claimed in claim 1, wherein the laser wavelength range is 1308.28 nm to 1310 nm, so as to realize a single-fiber transmission distance greater than 30 km.
4. The single-wavelength 100G long-distance optical module as claimed in claim 1 or 2, wherein the reverse bias voltage of the silicon germanium avalanche photodiode is 12 to 24V.
5. The single-wavelength 100G long-distance optical module of claim 1, wherein the digital signal processor further comprises a KP forward error corrector.
6. The single-wavelength 100G long-distance optical module as claimed in claim 1, wherein said digital signal processor further comprises a main receiver for obtaining electrical signals.
7. The single-wavelength 100G long-distance optical module according to claim 1, wherein the digital signal processor further comprises a main transmitter for outputting an electrical signal.
8. The single-wavelength 100G long-distance optical module according to claim 1, wherein the optical module is an SFP-DD small package or a QSFP small package.
9. The single-wavelength 100G long-distance optical module according to claim 1, further comprising a heat sink, wherein the heat sink and the digital signal processor integrated package are filled with a thermally conductive material.
10. The single wavelength 100G long distance optical module of claim 9, wherein the heat sink is a copper or copper alloy heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110517410.3A CN113259013B (en) | 2021-05-12 | 2021-05-12 | Single-wavelength 100G long-distance optical module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110517410.3A CN113259013B (en) | 2021-05-12 | 2021-05-12 | Single-wavelength 100G long-distance optical module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113259013A CN113259013A (en) | 2021-08-13 |
| CN113259013B true CN113259013B (en) | 2022-07-08 |
Family
ID=77223131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110517410.3A Active CN113259013B (en) | 2021-05-12 | 2021-05-12 | Single-wavelength 100G long-distance optical module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113259013B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115276875A (en) * | 2022-07-18 | 2022-11-01 | 希烽光电科技(南京)有限公司 | 100G ultra-long distance communication optical module and wavelength division multiplexing system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104967487A (en) * | 2015-07-24 | 2015-10-07 | 武汉光迅科技股份有限公司 | In-band unvarnished transmission monitoring signal optical module based on frequency modulation |
| WO2017016150A1 (en) * | 2015-07-24 | 2017-02-02 | 武汉光迅科技股份有限公司 | Optical module based on amplitude modulation for transparently transmitting monitoring signal in band |
| CN108055080A (en) * | 2017-07-10 | 2018-05-18 | 上海第二工业大学 | A kind of integrated wired and wireless transmission passive multi-plexing light accessing system devices of low peak average ratio OFDM |
| CN207968495U (en) * | 2018-03-28 | 2018-10-12 | 武汉电信器件有限公司 | A kind of 100G miniaturization optical modules transmitted at a distance |
-
2021
- 2021-05-12 CN CN202110517410.3A patent/CN113259013B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104967487A (en) * | 2015-07-24 | 2015-10-07 | 武汉光迅科技股份有限公司 | In-band unvarnished transmission monitoring signal optical module based on frequency modulation |
| WO2017016150A1 (en) * | 2015-07-24 | 2017-02-02 | 武汉光迅科技股份有限公司 | Optical module based on amplitude modulation for transparently transmitting monitoring signal in band |
| CN108055080A (en) * | 2017-07-10 | 2018-05-18 | 上海第二工业大学 | A kind of integrated wired and wireless transmission passive multi-plexing light accessing system devices of low peak average ratio OFDM |
| CN207968495U (en) * | 2018-03-28 | 2018-10-12 | 武汉电信器件有限公司 | A kind of 100G miniaturization optical modules transmitted at a distance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113259013A (en) | 2021-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Narasimha et al. | An ultra low power CMOS photonics technology platform for H/S optoelectronic transceivers at less than $1 per Gbps | |
| JP4722114B2 (en) | Parallel channel optical communication using a modulator array and a shared laser. | |
| Narasimha et al. | A 40-Gb/s QSFP optoelectronic transceiver in a 0.13 μm CMOS silicon-on-insulator technology | |
| CN104601244A (en) | 400 Gbps hot-plug high-speed optical transceiver module | |
| CN110780398A (en) | Direct-adjusting analog electro-optical conversion integrated assembly | |
| CN114167555B (en) | 6.4Tbps silicon-based optical engine transceiving chip assembly for high-speed optical communication | |
| Shindo et al. | High power and high speed SOA assisted extended reach EADFB laser (AXEL) for 53-Gbaud PAM4 fiber-amplifier-less 60-km optical link | |
| Zuffada | The industrialization of the Silicon Photonics: Technology road map and applications | |
| CN104218998A (en) | Light source module and light receiving-sending device | |
| Kanazawa et al. | 30-km error-free transmission of directly modulated DFB laser array transmitter optical sub-assembly for 100-Gb application | |
| WO2023060412A1 (en) | 6.4 tbps silicon-based optical engine transceiver chip assembly oriented to high-speed optical communication | |
| CN215264132U (en) | Silicon photonic integrated circuit | |
| CN113259013B (en) | Single-wavelength 100G long-distance optical module | |
| Kanazawa et al. | High output power SOA assisted extended reach EADFB laser (AXEL) TOSA for 400-Gbit/s 40-km fiber-amplifier-less transmission | |
| Shekhar | Silicon photonics: A brief tutorial | |
| Zhou et al. | Multiple Tb/s coherent optical transceivers for short reach interconnect | |
| CN109547113B (en) | Transmission method and transmission system of direct current reference signal | |
| Theurer et al. | 200 Gb/s uncooled EML with single MQW layer stack design | |
| Adachi et al. | Wide-temperature-range 100-Gbaud Operation of a Lumped-electrode-type EA-DFB for an 800-Gb/s Optical Transceiver | |
| CN116015464B (en) | High-speed photoelectric conversion module based on 5G communication and preparation method thereof | |
| Kuindersma et al. | Packaged, integrated DBF/EA-MOD for repeaterless transmission of 10 Gbit/s over 107 km standard fibre | |
| CN115347974B (en) | Multi-wavelength single-fiber bidirectional 400G long-distance optical communication system | |
| CN114337829A (en) | Dense wavelength division multiplexing ultra-long distance optical module | |
| Kohtoku | Compact InP-based optical modulator for 100-Gb/s coherent pluggable transceivers | |
| Kobayashi et al. | 128 Gbit/s Operation of AXEL with Energy Efficiency of 1.5 pJ/bit for Optical Interconnection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |