CN113253374A - Fingerprint identification display device - Google Patents
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- CN113253374A CN113253374A CN202110584595.XA CN202110584595A CN113253374A CN 113253374 A CN113253374 A CN 113253374A CN 202110584595 A CN202110584595 A CN 202110584595A CN 113253374 A CN113253374 A CN 113253374A
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- 239000000463 material Substances 0.000 claims abstract description 177
- 229920006254 polymer film Polymers 0.000 claims description 5
- 239000005543 nano-size silicon particle Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 158
- 239000004973 liquid crystal related substance Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
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- 238000002834 transmittance Methods 0.000 description 6
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- 238000000576 coating method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 238000002310 reflectometry Methods 0.000 description 3
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- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/287—Interference filters comprising deposited thin solid films comprising at least one layer of organic material
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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Abstract
A fingerprint identification display device comprises a display panel and a first filter film, wherein the display panel comprises a fingerprint identification sensing layer. The first filter film comprises m layers of first material film layers with different thicknesses and m layers of second material film layers with different thicknesses, which are alternately stacked, and the standard refractive index of the first material film layers is different from that of the second material film layers. The thickness of the first material film layer is in the range of 700nm/(4 x n)1‑700) To 1250nm/(4 x n)1‑1250). The thickness of the second material film layer is in the range of 700nm/(4 x n)2‑700) To 1250nm/(4 x n)2‑1250). The fingerprint identification display device can improve full screenFingerprint recognition rate.
Description
Technical Field
The application relates to the technical field of display, in particular to a fingerprint identification display device.
Background
With the development of liquid crystal display technology, users demand more functions and fashionable appearances for electronic products such as mobile phones, tablet computers, cameras and the like. At present, the development trend of mobile phones is light, thin and close to a full screen. Recently, full screen fingerprinting technology has come to work in order to achieve full screen or near full screen effects.
The fingerprint identification display screen utilizes light waves with the wavelength of 380nm to 630nm to reflect and image at the finger. However, when the wavelength of light is greater than 630nm, the light can penetrate through the finger, and at this time, the finger is similar to a light source, so that the resolution of full-screen fingerprint identification can be damaged by light above 630 nm.
However, filtering out light waves with a wavelength of 630nm or more affects normal display of the display screen, and therefore, in order to increase the full-screen fingerprint recognition rate of the fingerprint recognition display device, a new fingerprint recognition display device needs to be provided.
Disclosure of Invention
The application provides a fingerprint identification display device for improve full-screen fingerprint identification rate.
The embodiment of the application provides a fingerprint identification display device, which comprises a display panel, a fingerprint identification sensing layer and a fingerprint identification display unit, wherein the display panel comprises the fingerprint identification sensing layer; and a first filter film disposed on the display panel, wherein the first filter film includes m first material film layers with different thicknesses and m second material film layers with different thicknesses alternately stacked, m is a positive integer greater than 1, a standard refractive index of the first material film layer is different from a standard refractive index of the second material film layer, and a thickness range of the first material film layer is 700nm/(4 n)1-700) To 1250nm/(4 x n)1-1250) The thickness range of the second material film layer is 700nm/(4 x n)2-700) To 1250nm/(4 x n)2-1250)，n1-700The refractive index of light wave with the wavelength of 700nm in the first material film layer, n2-700The refractive index of light wave with the wavelength of 700nm in the second material film layer, n1-1250The refractive index of the light wave with the wavelength of 1250nm in the first material film layer, n2-1250The refractive index of the light wave with the wavelength of 1250nm in the second material film layer.
Optionally, in some embodiments of the present application, the thickness of the first material film layer is 737nm/(4 × n)1-737) To 1070nm/(4 x n)1-1070) The thickness of the second material film layer is in the range of 815nm/(4 x n)2-815) To 1185nm/(4 x n)2-1185) Wherein n is1-737At a wavelength of 737nmRefractive index of light wave in first material film layer, n2-815The refractive index of light wave with the wavelength of 815nm in the second material film layer, n1-1070Is the refractive index of light wave with wavelength of 1070nm in the first material film layer, n2-1185The refractive index of the light wave with the wavelength of 1185nm in the second material film layer.
Optionally, in some embodiments of the present application, the first material film layer has four layers, and the thicknesses of the four layers are 737nm/(4 × n)1-737)、900nm/(4*n1-900)、1000nm/(4*n1-1000)、1100nm/(4*n1-1100) The second material film layer has four layers with the thickness of 815nm/(4 x n)2-815)、1000nm/(4*n2-1000)、1100nm/(4*n2-1100)、1200nm/(4*n2-1200) Wherein n is1-737The refractive index of light wave with the wavelength of 800nm in the first material film layer, n1-900The refractive index of the light wave with the wavelength of 900nm in the first material film layer, n1-1000The refractive index of light wave with wavelength of 1000nm in the first material film layer, n1-1100The refractive index of light wave with the wavelength of 1100nm in the first material film layer, n2-815The refractive index of light wave with the wavelength of 815nm in the second material film layer, n2-1000The refractive index of light wave with the wavelength of 1000nm in the second material film layer, n2-1100The refractive index of light wave with the wavelength of 1100nm in the second material film layer, n2-1200The refractive index of the light wave with the wavelength of 1200nm in the second material film layer.
Optionally, in some embodiments of the present application, m is equal to 55, and the thickness formula of the first material film layer is λ/(4 × n)1-λ) The thickness formula of the second material film layer is lambda/(4 x n)2-λ) Wherein n is1-λIs the refractive index of light wave with wavelength of lambda nm in the first material film layer, n2-λThe refractive index of light wave with wavelength lambda nm in the second material film layer is shown, and the difference value of the wavelength of any adjacent first material film layer and the wavelength of any adjacent second material film layer is 5 nm.
Optionally, in some embodiments of the present application, the standard refractive index of the first material film layer is less than the standard refractive index of the second material film layer.
Optionally, in some embodiments of the present application, the material of the first material film layer is a hollow nano silicon sphere film with a standard refractive index equal to 1.28; the second material film layer is made of a second transparent polymer film with the standard refractive index equal to 1.51.
Optionally, in some embodiments of the present application, the fingerprint sensor layer has a second filter for passing light with a wavelength of 380nm to 700 nm.
Optionally, in some embodiments of the present application, the fingerprint sensor layer is located within the display panel.
Optionally, in some embodiments of the present application, the fingerprint sensor layer is located on an array layer within the display panel.
Optionally, in some embodiments of the present application, the fingerprint sensing layer is located below the display panel.
According to the fingerprint identification display device, the first filter film and the second material film layers of the first filter film are alternately stacked to reflect light with the filtering wavelength of 700nm to 1250 nm. Therefore, the problem of fuzzy fingerprint identification characteristics under red light and strong sunlight can be solved, the interference of infrared light under red light and strong sunlight on fingerprint identification is reduced, the full-screen fingerprint identification function cannot generate overexposure under red light and strong sunlight, the interference problem is prevented, and the full-screen fingerprint identification rate and the accuracy of the fingerprint identification display screen are improved. This application first filter coating is transparent filter coating, both can promote the display function of normal display screen, can realize again that biological characteristic detects's under the outdoor highlight function, has strengthened the differentiation performance of product, has promoted the market competition of product.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1a is a schematic structural diagram of a fingerprint identification display device according to an embodiment of the present disclosure;
FIG. 1b is a schematic structural diagram of a first filter film according to an embodiment of the disclosure;
fig. 1c is a schematic structural diagram of an infrared fingerprint imaging principle of a fingerprint identification display device according to an embodiment of the present application;
FIG. 2 is a schematic of the spectrum of sunlight;
FIG. 3 is a schematic diagram illustrating a reflectivity of a first filter according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating transmittance of a first filter according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of a fingerprint identification display device according to an embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a fingerprint identification display device according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a fingerprint identification display device according to an embodiment of the present application.
The reference numbers in the description of the figures are:
100. a first light filter film; 200. A second light filter film;
110. a first film layer of material; 120. A second film layer of material;
1. 1', 2, a fingerprint identification display device; 10. A liquid crystal display panel;
11, 26, cover plate; 12. A color film substrate;
13. an array substrate; 14. A liquid crystal layer;
15. a backlight; 151, 231, light waves;
20. a fingerprint identification sensing layer; 21. An OLED display panel;
22. a substrate; 23. A light emitting layer;
24. a transparent adhesive layer; 25. A touch layer;
27. a frame; 300. A display panel;
l10, L20, light; l12, L21, L23, reflected light;
l11, L22, transmitted light; 03. A finger;
01. a ridge; 02. A valley;
l1, visible light; l2, near infrared;
l0, ultraviolet light; m, spectral radiant flux density.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides a fingerprint identification display device. The details will be described below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
Referring to fig. 1a and 1b, the fingerprint identification display device according to the embodiment of the present disclosure includes a display panel 300 and a first filter 100 disposed on the display panel 300. Wherein the display panel 300 includes a fingerprint recognition sensing layer 20; the first filter film 100 includes m layers of first material film 110 with different thicknesses and m layers of second material film 120 with different thicknesses, where m is a positive integer greater than 1, which are alternately stackedThe standard refractive index of the first material film layer 110 is different from the standard refractive index of the second material film layer 120. In the embodiment of the present application, the thickness of the first material film 110 is in a range of 700nm/(4 × n)1-700) To 1250nm/(4 x n)1-1250) The thickness of the second material film layer 120 is 700nm/(4 × n)2-700) To 1250nm/(4 x n)2-1250) Wherein n is1-700The refractive index n of the light wave with the wavelength of 700nm in the first material film layer 1102-700The refractive index n of the light wave with the wavelength of 700nm in the second material film layer 1201-1250The refractive index n of the first material film layer 110 is the wavelength 1250nm2-1250The refractive index of the second material film layer 120 is 1250 nm.
Specifically, the standard refractive index refers to a refractive index measured by light wavelength of 589.29 nm (namely, the central wavelength of a double sodium line D1 and a D2 spectral line in a sodium atomic spectrum).
Specifically, the fingerprint sensing layer 20 of the fingerprint identification display device forms an image by reflecting light waves with wavelengths of 380nm to 630nm at a finger. As shown in fig. 1c, when a finger 03 presses on the surface of the first filter 100, the reflectance of a light wave L10 with a wavelength of 380nm to 630nm at a fingerprint ridge 01 is 0.1%, where L11 is the transmitted light at the ridge 01 and L12 is the reflected light at the ridge 01. The reflectivity of light wave L20 with a wavelength of 380nm to 630nm at fingerprint valley 02 can reach 3.5% to 6.8%, where L21 is the reflected light at the surface of the display panel 300, L22 is the transmitted light at the valley 02, and L23 is the reflected light at the valley 02, so that the fingerprint features with bright valleys and dark ridges are formed on the fingerprint identification sensing layer 20. Referring to fig. 2, the ordinate M represents spectral radiant flux density, the abscissa of the graph represents standard wavelength, L0 represents ultraviolet, L1 represents visible light, and L2 represents near infrared. It can be seen from fig. 2 that the energy at wavelengths above 600nm in L2 is still quite high, wherein light at wavelengths above 630nm can penetrate the finger, which then resembles a light emitting source, destroying the light and dark fingerprint features on the fingerprint identification sensing layer 20. Aiming at the defects, the embodiment of the application utilizes the first light filtering film 100 to improve the full-screen fingerprint identification rate, reduces the interference of light waves with wavelengths of 700nm to 1250nm in red light and strong sunlight to fingerprint identification, enables the fingerprint identification display device to realize the full-screen fingerprint identification function under the light waves with wavelengths of 380nm to 700nm, and improves the full-screen fingerprint identification rate.
Specifically, if the filtering range of the first filter 100 is set to be greater than or equal to 630nm, the display function of the display panel 300 is affected, so that the filtering range of the first filter 100 is set to be 700nm to 1250nm, and the full-screen fingerprint recognition rate is improved without affecting the display function of the display panel 300.
In the present application, in order to ensure that the transmittance of light waves with a wavelength of 380nm to 700nm in the first material film layer 110 and the second material film layer 120 is greater than 90%, preferably, the material of the first material film layer 110 is a hollow nano silicon sphere film with a standard refractive index equal to 1.28, and the material of the second material film layer 120 is a second transparent polymer film with a standard refractive index equal to 1.51; further preferably, the first material film layer 110 is made of a silicon-based material with a hollow silicon dioxide (hollow silicon) structure, and the second material film layer 120 may be made of an acrylic material.
Specifically, the first filter film 100 formed by matching a material with a standard refractive index of 1.28 and a material with a standard refractive index of 1.51 can provide a photon band stop about 74nm wide for a light wave with a wavelength of 700nm and provide a photon band stop about 130nm wide for a light wave with a wavelength of 1250 nm. Therefore, when the thickness of the first material film 110 is in the range of 700nm/(4 × n)1-700) To 1250nm/(4 x n)1-1250) And the thickness of the second material film layer 120 is in a range of 700nm/(4 x n)2-700) To 1250nm/(4 x n)2-1250) When the light source is used, light waves with the wavelength of 663nm to 1315nm can be blocked.
Wherein the frequency bandwidth Δ f0The size of the photon stop band can be calculated by equation (1)
Where f is the center frequency, n1Is the standard refractive index, n, of the material of the first material film layer 1102Is the standard refractive index of the material of the second material film layer 120.
When the wavelength is 700nm, f is equal to C/700nm, n1＝1.28，n2Substituting 1.51 into the above formula (1), where C is the speed of light, yields Δ f0About C/74nm, the first filter 100 provides a photonic band stop about 74nm wide for a light wave with a wavelength of 700 nm.
When f is 1250nm, the f is C/1250nm, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/130nm, i.e., the first filter film 100 provides a photonic band stop about 130nm wide for a light wave with a wavelength of 1250 nm.
When the center frequency is f, the wavelength of light that the first filter film 100 can block is:
f±Δf0/2。
when the thickness of the first material film layer 110 is 700nm/(4 × n)1-700) To 1250nm/(4 x n)1-1250) The thickness of the second material film layer 120 is 700nm/(4 × n)2-700) To 1250nm/(4 x n)2-1250) The minimum wavelength which can be blocked is 663nm from 700 to 74/2, and the maximum wavelength which can be blocked is 1315nm from 1250+ 130/2.
Specifically, taking the first material film 110 with the standard refractive index of 1.28 and the second material film 120 with the standard refractive index of 1.51 to form the first filter film 100 as an example, the thickness is 700nm/(4 × n)1-700) Equal to 546.9nm, and a thickness of 1250nm/(4 n)1-1250) Equal to 976.6nm, thickness 700nm/(4 x n)2-700) Equal to 463.6nm, and a thickness of 1250nm/(4 n)2-1250) Equal to 827.8 nm.
Further, in an embodiment of the present application, the thickness of the first material film 110 is 737nm/(4 × n)1-737) To 1070nm/(4 x n)1-1070) The thickness of the second material film layer 120 is 815nm/(4 × n)2-815) To 1185nm/(4 x n)2-1185) Wherein n is1-737The refractive index n of light wave with wavelength of 737nm in the first material film layer 1102-815The refractive index n of the light wave with the wavelength of 815nm in the second material film layer 1201-1070Is the refractive index, n, of light wave with wavelength of 1070nm in the first material film layer 1102-1185Which is the refractive index of the second material film layer 120 for light wave with the wavelength of 1185 nm.
Specifically, if the first material film layer 110 is a hollow nano-silica sphere film with a standard refractive index equal to 1.28, and the second material film layer 120 is a second transparent polymer film with a standard refractive index equal to 1.51, the first filter film 100 of the embodiment can reflect light waves with wavelengths from 698nm to 1247 nm. The interference of red light and strong sunlight light waves to fingerprint identification is reduced, so that the fingerprint identification display device can realize a full-screen fingerprint identification function under the light waves with the wavelength of 380nm to 700nm, and the full-screen fingerprint identification rate is improved.
The wavelengths of 737nm, 1070nm, 815nm and 1185nm are selected for the following reasons:
737nm wavelength, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/77nm, that is, the first filter film 100 provides a photon band stop (bandwidth) about 77nm wide for a light wave with a wavelength of 737nm, so that the wavelength of the light wave which can be blocked is 737-77/2 about 698nm, i.e., covering 700 nm;
at wavelength 1070nm, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/112nm, i.e., the first filter film 100 provides photon bandstop (bandwidth) about 112nm wide for a wavelength 1070nm light, so that the wavelength of the light to be blocked is 1070-112/2 about 1126nm, i.e., about 1122nm (1185 nm/(4 n))2-1185) The band stop range formed by the second material film layer 120);
the wavelength is 815nm, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/86nm, i.e., the first filter film 100 provides about 86nm wide photon rejection (bandwidth) for 815nm wavelength light, so that the wavelength of 815-86/2 light can be blocked at about 772nm, i.e., 775nm (737 nm/(4 n × 4nm thickness)1-737) The band stop range 737+77/2 formed by the first film layer of material 110);
the wavelength is 1185nm, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/125nm, i.e., the first filter 100 provides a photon band stop (bandwidth) about 125nm wide for a light wave with a wavelength of 1185nm, so that the wavelength of the light wave to be blocked is 1185 + -125/2, which is about 1122nm to 1247nm, i.e., which is approximately up to 1250 nm.
In this embodiment, since m is a positive integer greater than 1, the first filter 100 at least includes two first material film layers 110 with different thicknesses and two second material film layers 120 with different thicknesses, which are alternately stacked, and the refractive index of the first material film layer 110 is different from the refractive index of the second material film layer 120; the more the number of the first material film layer 110 and the second material film layer 120 is, the better the selection ratio of the first filter film 100 to the wavelength is; in order to ensure that light having a wavelength of 380nm to 700nm can pass through the first filter 100, the number of the first material film layer 110 and the second material film layer 120 needs to be increased as appropriate.
Preferably, in a more preferred embodiment of the present application, the first material film 110 has four layers, and the thickness of each first material film 110 is 737nm/(4 × n)1-737)、900nm/(4*n1-900)、1000nm/(4*n1-1000)、1100nm/(4*n1-1100) The second material film 120 has four layers, and the thicknesses of the second material film 120 are 815nm/(4 x n)2-815)、1000nm/(4*n2-1000)、1100nm/(4*n2-1100)、1200nm/(4*n2-1200) (ii) a Wherein n is1-737The refractive index n of light wave with wavelength of 737nm in the first material film layer 1101-900The refractive index n of the light wave with the wavelength of 900nm in the first material film layer 1101-1000Is the refractive index, n, of light wave with wavelength of 1000nm in the first material film layer 1101-1100The refractive index n of light wave with wavelength of 1100nm in the first material film layer 1102-815The refractive index n of the light wave with the wavelength of 815nm in the second material film layer 1202-1000The refractive index n of the light wave with the wavelength of 1000nm in the second material film layer 1202-1100The refractive index n of light wave with wavelength of 1100nm in the second material film layer 1202-1200Light wave with wavelength of 1200nm is in the second material film layer120, of refractive index.
Specifically, due to the photon rejection characteristics of the first filter film 100, it is not necessary to provide too many stacked layers. If the first material film layer 110 is made of a hollow nano-silica sphere film with a standard refractive index equal to 1.28, and the second material film layer 120 is made of a second transparent polymer film with a standard refractive index of 1.51, the first filter film 100 formed by four first material film layers 110 and four second material film layers 120 in the above embodiment can reflect light waves with a wavelength of 698nm to 1263 nm. The interference of red light and strong sunlight light waves to fingerprint identification is reduced, so that the fingerprint is displayed by a display device under the light waves with the wavelength of 380nm to 700nm to realize the full-screen fingerprint identification function, and the full-screen fingerprint identification rate is improved.
The reason why the first filter film 100 can reflect light with a wavelength of 1263nm is as follows:
the wavelength is 1200nm, n1＝1.28，n2The formula (1) is substituted with 1.51 to obtain Δ f0About C/126nm, i.e., the first filter 100 provides a photon rejection (bandwidth) about 126nm wide for light with a wavelength of 1200nm, so that the wavelength of light that can be blocked is 1200+126/2, about 1263nm, i.e., approximately covering 1263 nm.
Further, in another preferred embodiment of the present application, the number of the first material film layer 110 and the number of the second material film layer 120 are increased, so that m is equal to 55, that is, the number of the first material film layer 110 is 55, and the number of the second material film layer 120 is 55; in the present embodiment, the thickness formula of the first material film 110 is λ/(4 × n)1-λ) The thickness formula of the second material film layer 120 is λ/(4 × n)2-λ) Wherein n is1-λIs the refractive index, n, of light wave with wavelength of lambda nm in the first material film layer 1102-λThe refractive index of the light wave with the wavelength λ nm in the second material film layer 120 is shown, and the difference of the selected wavelengths in the thickness formula of any adjacent first material film layer 110 and second material film layer 120 is 5 nm. Specifically, the first material film layer 110 and the second material film layer 120 of the first filter film 100 are used to measure the wavelength of 700nm to 125nmThe light wave of 0nm is divided, and every 5nm is a unit, the first filter film 100 includes 55 first material film layers 110 with different thicknesses and 55 second material film layers 120 with different thicknesses, which are alternately stacked. More specifically, a layer of the first material film 110 and a layer of the second material film 120 are first prepared according to the principle of reflection increase for light waves with a wavelength of 700nm, then a layer of the first material film 110 and a layer of the second material film 120 are prepared according to the principle of reflection increase for light waves with a wavelength of 705nm, and so on, so that a layer of the first material film 110 and a layer of the second material film 120 are prepared according to the principle of reflection increase for light waves with a wavelength of 1250 nm.
Referring to fig. 3, fig. 3 is a schematic view illustrating a reflectivity of a first filter according to an embodiment of the present disclosure; in fig. 3, the horizontal axis represents the wavelength (λ) of light incident on the first filter, and the vertical axis represents the reflectance (%) of the first filter with respect to the wavelength of light; as can be seen from fig. 3, when the wavelength of light incident on the first filter 100 is greater than 800nm, the reflectance of the first filter 100 for light with the wavelength is greater than 90%.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating transmittance of a first filter film according to an embodiment of the disclosure; in fig. 4, the horizontal axis represents the wavelength (λ) of light incident on the first filter, and the vertical axis represents the transmittance (%) of the first filter for light of the wavelength; as can be seen from fig. 4, when the wavelength of light incident on the first filter 100 is 380nm to 700nm, the transmittance of the first filter 100 to light having the wavelength of 380nm to 700nm is about 99%, and when the wavelength of light incident on the first filter 100 is 800nm to 1150nm, the transmittance of the first filter 100 to light having the wavelength of 800nm to 1150nm is 0.
As shown in fig. 3 and 4, the first filter film can make the passing rate of red light or infrared light close to 0, so that the interference of infrared light under red light and strong sunlight to fingerprint identification can be reduced, and the full-screen fingerprint identification rate and accuracy of the fingerprint identification display screen can be improved.
In other preferred embodiments, the difference between the wavelengths selected in the thickness formula of any adjacent first material film 110 and second material film 120 may also be 10 nm. Correspondingly, the preparation principle of each of the first material film layer 110 and the second material film layer 120 of the first filter film 100 is the same as that of the previous embodiment.
In any of the above embodiments of the present application, the standard refractive index of the first material film layer 110 is less than the standard refractive index of the second material film layer 120. As shown in fig. 1b, in a direction in which light waves are incident on the first filter film 100, the thickness of the first material film layer 110 gradually increases, and the thickness of the second material film layer 120 gradually increases.
In any of the above embodiments of the present application, the first filter 100 is disposed on the display panel. The display panel can be a liquid crystal display panel or an OLED display panel. Specifically, the first filter 100 is disposed as shown in fig. 5, 6 and 7.
In an embodiment of the fingerprint display device provided in the present application, the fingerprint sensing layer 20 is located inside the display panel. Specifically, as shown in fig. 5, the fingerprint identification display device 1 includes a first filter 100, a liquid crystal display panel 10, a backlight 15 for providing a light source for the liquid crystal display panel 10, and a cover plate 11 disposed on a side of the liquid crystal display panel 10 away from the backlight 15, that is, the cover plate 11 is disposed on a light emitting side of the liquid crystal display panel 10. As shown in fig. 5, the liquid crystal display panel 10 includes a color film substrate 12 and an array substrate 13 that are disposed opposite to each other, and a liquid crystal layer 14 disposed between the color film substrate 12 and the array substrate 13, the cover plate 11 is disposed on a side of the color film substrate 12 that is away from the array substrate 13, and the backlight 15 is configured to provide light 151 to the liquid crystal display panel 10. As shown in fig. 5, the fingerprint sensor layer 20 is disposed on the color filter substrate 12 side of the liquid crystal display panel 10, and the fingerprint sensor layer 20 is disposed on a side of the color filter substrate 12 close to the liquid crystal layer 14.
The first filter film 100 is disposed on the cover plate 11 to reflect light with an external wavelength of 700nm to 1250nm and pass light with a wavelength of 380nm to 700 nm. In other embodiments, the first filter 100 may also be disposed between the cover plate 11 and the liquid crystal display panel 10. As shown in fig. 5, the fingerprint identification display device 1 further includes a second filter 200 disposed on the fingerprint identification sensing layer 20.
In one embodiment, as shown in FIG. 6, the fingerprint sensor layer 20 is located on an array layer within the display panel.
Referring to fig. 6, the fingerprint identification display device 1' shown in fig. 6 is similar to the fingerprint identification display device 1 shown in fig. 5, except for the location of the fingerprint sensing layer 20. As shown in fig. 6, the fingerprint sensor layer 20 is disposed on a side of the array substrate 13 close to the liquid crystal layer 14, and the second filter 200 is disposed on a side of the color filter substrate 12 close to the liquid crystal layer 14. When a finger presses the surface of the first filter 100 away from the liquid crystal display panel 10, the light 151 emitted from the backlight 15 is transmitted through the liquid crystal display panel 10, the cover plate 11, and the first filter 100, and then is reflected onto the fingerprint identification sensing layer 20 by a finger fingerprint.
In other embodiments of the present application, the fingerprint sensor layer 20 is located below the display panel as shown in FIG. 7.
Referring to fig. 7, in the fingerprint identification display device 2 according to the embodiment of the present application, the display panel may also be replaced by an OLED display panel 21, and the fingerprint identification sensing layer 20 is disposed below the OLED display panel 21; specifically, as shown in fig. 7, the fingerprint sensing layer 20 receives the detection beam to realize full-screen fingerprint identification of the fingerprint identification display device.
As shown in fig. 7, the fingerprint identification display device 2 includes an OLED display panel 21, a transparent adhesive layer 24, a touch layer 25, a cover plate 26 and a frame 27, which are sequentially stacked, wherein the first filter 100 is disposed on the cover plate 26 for reflecting light waves with an external wavelength of 700nm to 1250nm and passing light waves with a wavelength of 380nm to 700 nm. The OLED display panel 21 includes a substrate 22, a light emitting layer 23 disposed on the substrate 22, and an encapsulation layer (not shown) covering the light emitting layer 23. The fingerprint sensor layer 20 is disposed on a side of the substrate 22 facing away from the cover 26. The OLED display panel 2 further includes a second filter 200, and the second filter 200 is used for passing light waves with a specific wavelength for sensing by the fingerprint sensing layer 20. As shown in fig. 7, when a finger presses the surface of the first filter 100 away from the OLED display panel 21, the light 231 emitted from the light-emitting layer 23 sequentially transmits through the transparent adhesive layer 24, the touch layer 25, the cover plate 26 and the first filter 100, and then is reflected by a finger fingerprint, passes through the OLED display panel 21 and then enters the second filter 200, and the light passes through the second filter 200 and then enters the fingerprint identification sensing layer 20.
This application among the fingerprint identification display device, through first filter coating 100 first material rete 110 with second material rete 120 stacks up the setting in turn and reflects the filtration for 700nm to 1250 nm's light wave of wavelength, thereby can solve under the ruddiness and can produce the fuzzy problem of fingerprint identification characteristic under the strong sunlight, reduce ruddiness and strong sunlight to fingerprint identification's interference, make full-screen fingerprint identification function can not produce overexposure under ruddiness and strong sunlight, realize full-screen fingerprint identification under the light wave that the wavelength is 380nm to 700nm, and then improve full-screen fingerprint identification rate and the rate of accuracy of fingerprint identification display screen. This application first filter coating 100 is transparent filter coating, both can promote the display function of normal display screen, can realize again that biological characteristic detects's under the outdoor highlight function, has strengthened the differentiation performance of product, has promoted the market competition of product.
The fingerprint identification display device provided by the embodiment of the present application is described in detail above, and the principle and the implementation of the present application are explained in the present application by applying a specific example, and the description of the above embodiment is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A fingerprint identification display device, comprising:
a display panel comprising a fingerprint identification sensing layer; and the number of the first and second groups,
a first filter film disposed on the display panel, wherein the first filter film includes m first material film layers with different thicknesses and m second material film layers with different thicknesses alternately stacked, m is a positive integer greater than 1, a standard refractive index of the first material film layer is different from a standard refractive index of the second material film layer, and a thickness range of the first material film layer is 700nm/(4 n)1-700) To 1250nm/(4 x n)1-1250) The thickness range of the second material film layer is 700nm/(4 x n)2-700) To 1250nm/(4 x n)2-1250)，n1-700The refractive index of light wave with the wavelength of 700nm in the first material film layer, n2-700The refractive index of light wave with the wavelength of 700nm in the second material film layer, n1-1250The refractive index of the light wave with the wavelength of 1250nm in the first material film layer, n2-1250The refractive index of the light wave with the wavelength of 1250nm in the second material film layer.
2. The fingerprint recognition display device of claim 1, wherein the first material film layer has a thickness in a range of 737nm/(4 x n)1-737) To 1070nm/(4 x n)1-1070) The thickness of the second material film layer is in the range of 815nm/(4 x n)2-815) To 1185nm/(4 x n)2-1185) Wherein n is1-737Refractive index n of 737nm light wave in the first material film layer2-815The refractive index of light wave with the wavelength of 815nm in the second material film layer, n1-1070Is the refractive index of light wave with wavelength of 1070nm in the first material film layer, n2-1185The refractive index of the light wave with the wavelength of 1185nm in the second material film layer.
3. The fingerprint identification display device of claim 1, wherein said first material film layer has four layers, and each of said four layers has a thickness of 737nm/(4 x n)1-737)、900nm/(4*n1-900)、1000nm/(4*n1-1000)、1100nm/(4*n1-1100) The second material film layer has four layers with the thickness of 815nm/(4 x n)2-815)、1000nm/(4*n2-1000)、1100nm/(4*n2-1100)、1200nm/(4*n2-1200) Wherein n is1-737Refractive index n of 737nm light wave in the first material film layer1-900The refractive index of the light wave with the wavelength of 900nm in the first material film layer, n1-1000The refractive index of light wave with wavelength of 1000nm in the first material film layer, n1-1100The refractive index of light wave with the wavelength of 1100nm in the first material film layer, n2-815The refractive index of light wave with the wavelength of 815nm in the second material film layer, n2-1000The refractive index of light wave with the wavelength of 1000nm in the second material film layer, n2-1100The refractive index of light wave with the wavelength of 1100nm in the second material film layer, n2-1200The refractive index of the light wave with the wavelength of 1200nm in the second material film layer.
4. The fingerprint identification display device of claim 1, wherein m is equal to 55, and the thickness formula of the first material film layer is λ/(4 x n)1-λ) The thickness formula of the second material film layer is lambda/(4 x n)2-λ) Wherein n is1-λIs the refractive index of light wave with wavelength of lambda nm in the first material film layer, n2-λThe refractive index of light wave with wavelength lambda nm in the second material film layer is shown, and the difference value of the wavelength of any adjacent first material film layer and the wavelength of any adjacent second material film layer is 5 nm.
5. The fingerprint recognition display device of claim 4, wherein the first material film layer has a standard refractive index that is less than a standard refractive index of the second material film layer.
6. The fingerprint identification display device of claim 1, wherein the first material film layer is made of a hollow nano silicon sphere film with a standard refractive index equal to 1.28; the second material film layer is made of a second transparent polymer film with the standard refractive index equal to 1.51.
7. The fingerprint recognition display device of claim 1, wherein the fingerprint sensor layer has a second filter for passing light having a wavelength of 380nm to 700 nm.
8. The fingerprint recognition display device of claim 1, wherein the fingerprint recognition sensing layer is located within the display panel.
9. The fingerprint recognition display device of claim 8, wherein the fingerprint recognition sensing layer is located on an array layer within the display panel.
10. The fingerprint recognition display device of claim 1, wherein the fingerprint recognition sensing layer is located below the display panel.
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