CN113242030A - Dynamic array nano material strain platform based on surface acoustic wave device - Google Patents
Dynamic array nano material strain platform based on surface acoustic wave device Download PDFInfo
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- CN113242030A CN113242030A CN202110597442.9A CN202110597442A CN113242030A CN 113242030 A CN113242030 A CN 113242030A CN 202110597442 A CN202110597442 A CN 202110597442A CN 113242030 A CN113242030 A CN 113242030A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a dynamic array nano material strain platform construction and device preparation based on an acoustic surface wave device, which is characterized in that: the range of the introduced strain can be controlled by the parameter design of the surface acoustic wave device, and whether to introduce the strain can be realized by switching on and off. The system specifically comprises an EVB evaluation board arranged at the bottommost layer, a 128-degree Y lithium niobate substrate is fixed in the center of the board, metal interdigital electrodes with preset patterns in a specified direction are arranged on the substrate, a blank area of 100um x 100um is arranged in the center of the electrodes and used for carrying two-dimensional materials, and the whole platform is driven by an external device to supply power. The invention has the advantages that a novel dynamic array strain platform is provided for improving the performance of the two-dimensional material, the strain size and range are accurately controlled by changing the design parameters, the flexibility is strong, and the real-time regulation and control are realized.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to construction of a dynamic array nano material strain platform based on a surface acoustic wave device and preparation of the device.
Background
In recent years, two-dimensional materials have been the hot target of research in the nanometer field due to the advantages of simple crystal structure, structural characteristics of atomic-scale thickness and the like, and meanwhile, the strain means can effectively change the relevant characteristics of the two-dimensional materials such as electrical properties and the like, and the two-dimensional materials have excellent mechanical properties and higher rigidity, so the two-dimensional materials have very wide application prospects in the field of strain electronics.
The common methods for introducing strain to two-dimensional materials at present are as follows:
the strain is introduced by bending the flexible polymer substrate, the size of the strain is controlled by the bending degree, but the range of the generated strain is very small because the relative motion is easy to occur between the flexible substrate and the two-dimensional material;
introducing strain through the arrayed substrate, and directly transferring the two-dimensional material onto the arrayed substrate, wherein the introduced strain is permanent and can not be withdrawn, and the strain range is controlled by the arrayed pattern of the substrate;
the strain is introduced through bubbles and wrinkles between layers, and the strain introduced by the method is limited by the positions, sizes and shapes of the bubbles and the wrinkles and cannot be accurately controlled.
Disclosure of Invention
In order to avoid the disadvantages caused by the above methods for introducing strain, the invention aims to: the introduced strain range can be controlled through parameter design of the surface acoustic wave device, whether strain is introduced or not can be realized through power on and power off, and real-time regulation and control are realized.
The technical scheme of the invention is as follows:
dynamic array nano-material strain platform based on surface acoustic wave device, its characterized in that: including setting up the EVB aassessment board at the bottommost, EVB aassessment board central authorities fix 128Y lithium niobate substrates, be equipped with the metal interdigital electrode of the preset figure of stipulated direction on the 128Y lithium niobate substrate, a pair of metal interdigital electrode central authorities be equipped with 100 um's blank area.
The device of claim 1, wherein the metal interdigital electrode is Cr/Al.
The device of claim 1, driven by an external excitation signal, wherein the external excitation signal is generated by a radio frequency signal generator, a power amplifier, a power divider and various cables required by a connecting instrument.
The method of claim 1, wherein the blank areas are used for transferring the two-dimensional material to the lithium niobate substrate by mechanical peeling.
A method of making a surface acoustic wave device, comprising: the method comprises the following steps:
(1) setting the period length lambda, the aperture length W, the interdigital electrode pair number N and the distance d between two interdigital electrodes, and designing and manufacturing a mask;
(2) transferring the pattern of the mask plate to the photoresist of the lithium niobate substrate by utilizing a photoetching process, and adding a preheating process for improving the yield;
(3) depositing metal Cr and Al, putting the substrate into acetone for ultrasonic treatment, and performing lift-off;
(4) after scribing, fixing the single device on an EVB evaluation board, and connecting the device with an SMA interface for external test by a gold wire ball bonding method.
The method according to claim 5, wherein in step (1), the period length of the interdigital electrode is 8um, the aperture length is 800um, the interdigital electrode is 100 pairs, and the distance between two interdigital electrodes is 1000 um.
The method of claim 5, wherein the photolithography process parameters in step (2): spin-coating negative photoresist using spin coater: prerotation 600rpm/30s, 1200rpm/300s, using hotplate pre-bake: 105 ℃ for 300s, exposure using a photolithography machine: 5s, postbaking using a hotplate: developing at 115 ℃ for 210s by using a developing solution: and 75 s.
The method according to claim 5, wherein in the step (3), the thickness of the adhesion layer Cr is 10nm, the thickness of the Al electrode is 120nm, and the ultrasonic time is 20 min.
The invention has the advantages and positive effects that:
1. a platform for providing strain for the two-dimensional material is successfully built by using the surface acoustic wave device, and an effective means is provided for improving the electrical and optical related performances of the two-dimensional material.
2. The degree of strain generated by the invention can be controlled by changing the power of the excitation signal, the larger the power of the excitation signal is, the larger the amplitude of the surface acoustic wave is, the larger the generated strain is, the relationship of the strain magnitude to the performance improvement of the two-dimensional material can be further explored, the strain magnitude can be quantified by applying the power magnitude, and the accuracy is improved.
3. The strain generated by the invention can change the frequency of the surface acoustic wave by changing the width of the interdigital electrode of the surface acoustic wave device, namely, the period of the acoustic wave is changed, and the array pattern on the piezoelectric substrate is further changed.
4. The strain generated by the invention is not permanent, and the surface acoustic wave device can stop working at any time by canceling the excitation signal in the use process, so that the effect of the strain on the two-dimensional material is eliminated, more kinds of application requirements can be met in use, and permanent damage to the material is avoided.
Drawings
FIG. 1 is a schematic diagram of an external excitation signal driving system
FIG. 2 surface acoustic wave device layout
FIG. 3 platform center-shifted two-dimensional Material (exemplified by WS 2) optical image
FIG. 4 test chart of resonant frequency and S parameter of surface acoustic wave device
Detailed description of the invention
The technical scheme of the invention is further described in detail by combining the accompanying drawings 1, 2, 3, 4 and 5 and specific embodiments:
a dynamic array nano material strain platform based on a surface acoustic wave device comprises an EVB evaluation plate arranged at the bottommost layer, a 128-degree Y lithium niobate substrate is fixed in the center of the plate, metal interdigital electrodes with preset patterns in specified directions are arranged on the substrate, and a blank area two-dimensional material reservation of 100um by 100um is arranged in the center.
The test platform is shown in figure 1, the whole system is shown in figure 2, and the test platform mainly comprises a radio frequency signal generator 1, a power amplifier 2, a power divider 3, an EVB evaluation board carrying surface acoustic wave device 4, a direct current power supply 5 and various cables required by connecting instruments. Wherein:
the radio frequency signal generator is mainly used for generating radio frequency alternating current signals, the frequency range is from 9kHz to 4GHz, the maximum output power is 19dBm, and the test requirements of surface acoustic wave devices with different frequencies can be met;
the power amplifier is used for amplifying the radio-frequency signal generated by the radio-frequency signal generator, and has the functions of amplifying an input signal, generating an electric signal with larger energy and converting the electric signal into an acoustic signal, so that the deformation of the micron level is achieved, and the power can be maximally amplified to 43 dBm;
the power divider is used for dividing output signals into two paths which are respectively added on the opposite pair of interdigital electrodes, the generated two sound waves move in opposite directions, and the distance is set to be integral multiple of the wavelength, so that two waves can be superposed in a middle blank area to form standing waves;
4, the EVB evaluation board is provided with a surface acoustic wave device which is the main part of the invention, a lithium niobate substrate is fixed in the center of the EVB board by using double-sided adhesive tape, and an electrode on the device is connected with an SMA joint on the board in a gold wire ball bonding mode;
and 5, the direct current power supply is used for supplying power to the power amplifier.
The layout of the surface acoustic wave device is shown in fig. 3, two pairs of metal interdigital electrodes are respectively arranged on the left, the right, the upper and the lower sides of the surface acoustic wave device, the center cross is a central area for generating standing waves and is used for transferring two-dimensional materials, and large alignment marks (+) on the periphery are used for further electron beam exposure of the device.
A preparation method of a dynamic array nano material strain platform device based on a surface acoustic wave device comprises the following steps:
(1) setting the period length lambda of the interdigital electrode to be 8um, the aperture length W to be 800um, the number N of pairs of interdigital electrodes to be 100 and the distance d between two interdigital electrodes to be 1000um, and designing and manufacturing a mask.
The unit layout of the mask acoustic surface wave device is shown in fig. 2, two pairs of metal interdigital electrodes are respectively arranged on the left, the right, the upper and the lower sides of the unit layout, the most central cross is a central area for generating standing waves and is used for transferring two-dimensional materials, and large alignment marks (+) on the periphery are used for further electron beam exposure of the device.
(2) Spin-coating photoresist on a lithium niobate substrate, baking the substrate at 600rpm/30s and 1200rpm/300s on a hot plate for 300s at 105 ℃, exposing the substrate by using a photoetching machine and a prepared mask plate, baking the substrate on the hot plate for 210s at 1156 ℃, putting the substrate into a developing solution for developing for 75s, and finishing the photoetching process.
(3) Metals 10nm Cr and 120nmAl were deposited using a metal evaporation station, and the substrate was placed in acetone and sonicated for 20 minutes for lift-off.
(4) After scribing, fixing the single device on an EVB evaluation board, and connecting the device with an SMA interface for external test by a gold wire ball bonding method.
(5) A small amount of WS2 was placed on a blue tape, the tape was folded several times, and the thin sheet-like WS2 was transferred to the blank region in the middle of a lithium niobate-based SAW device through a PDMS film, and its optical microscopic image is shown in FIG. 4.
The test results of the surface acoustic wave device are shown in fig. 5, and the surface acoustic wave device manufactured by the invention has multiple stages of resonance peaks, and the resonance frequency is from 454MHz to 259MHz, which is basically consistent with the expected setting.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and is not intended to limit the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (8)
1. Dynamic array nano-material strain platform based on surface acoustic wave device, its characterized in that: including setting up the EVB aassessment board at the bottommost, EVB aassessment board central authorities fix 128Y lithium niobate substrates, be equipped with the metal interdigital electrode of the preset figure of stipulated direction on the 128Y lithium niobate substrate, a pair of metal interdigital electrode central authorities be equipped with 100 um's blank area.
2. The dynamic array nanomaterial strain platform based on surface acoustic wave devices of claim 1, wherein: the metal interdigital electrode is Cr/Al.
3. The dynamic array nanomaterial strain platform based on surface acoustic wave devices of claim 1, wherein: the power divider is driven by an external excitation signal, and the generation of the external excitation signal mainly comprises a radio frequency signal generator, a power amplifier, a power divider and various cables required by a connecting instrument.
4. The dynamic array nanomaterial strain platform based on surface acoustic wave devices of claim 1, wherein: the blank area is used for transferring the two-dimensional material to the lithium niobate substrate through a mechanical stripping method.
5. A method of making a surface acoustic wave device, comprising: the method comprises the following steps:
(1) setting the period length lambda, the aperture length W, the interdigital electrode pair number N and the distance d between two interdigital electrodes, and designing and manufacturing a mask;
(2) transferring the pattern of the mask plate to the photoresist of the lithium niobate substrate by utilizing a photoetching process, and adding a preheating process for improving the yield;
(3) depositing metal Cr and Al, putting the substrate into acetone for ultrasonic treatment, and performing lift-off;
(4) after scribing, fixing the single device on an EVB evaluation board, and connecting the device with an SMA interface for external test by a gold wire ball bonding method.
6. A method of making a surface acoustic wave device according to claim 5, wherein: in step (1), the cycle length of the interdigital electrode is 8um, the aperture length is 800um, 100 pairs of interdigital electrodes are provided, and the distance between two interdigital electrodes is 1000 um.
7. A method of making a surface acoustic wave device according to claim 5, wherein: the photoetching process parameters in the step (2) are as follows: spin-coating negative photoresist using spin coater: prerotation 600rpm/30s, 1200rpm/300s, using hotplate pre-bake: 105 ℃ for 300s, exposure using a photolithography machine: 5s, postbaking using a hotplate: developing at 115 ℃ for 210s by using a developing solution: and 75 s.
8. A method of making a surface acoustic wave device according to claim 5, wherein: in the step (3), the thickness of the Cr of the adhesion layer is 10nm, the thickness of the Al electrode is 120nm, and the ultrasonic time is 20 min.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115554985A (en) * | 2022-09-15 | 2023-01-03 | 中国人民解放军国防科技大学 | Gas-phase explosive sensitive adsorption material and preparation method thereof, gas-phase explosive sensing chip and application thereof |
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| US20080216558A1 (en) * | 2007-03-08 | 2008-09-11 | Honeywell International | Saw based CO2 sensors using carbon nanotubes as the sensitive layer |
| CN108493325A (en) * | 2018-04-03 | 2018-09-04 | 清华大学 | A kind of high-frequency high-performance SAW device and preparation method thereof |
| CN109883984A (en) * | 2019-02-18 | 2019-06-14 | 西安科技大学 | A kind of nanometer acoustic effect research method based on wide range scale |
| US20210099157A1 (en) * | 2019-09-27 | 2021-04-01 | Skyworks Solutions, Inc. | Stacked acoustic wave resonator package with laser-drilled vias |
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2021
- 2021-05-31 CN CN202110597442.9A patent/CN113242030A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080216558A1 (en) * | 2007-03-08 | 2008-09-11 | Honeywell International | Saw based CO2 sensors using carbon nanotubes as the sensitive layer |
| CN101236299A (en) * | 2008-01-17 | 2008-08-06 | 上海交通大学 | Sonic surface wave driven two-dimensional micro optical platform and method of manufacture |
| CN108493325A (en) * | 2018-04-03 | 2018-09-04 | 清华大学 | A kind of high-frequency high-performance SAW device and preparation method thereof |
| CN109883984A (en) * | 2019-02-18 | 2019-06-14 | 西安科技大学 | A kind of nanometer acoustic effect research method based on wide range scale |
| US20210099157A1 (en) * | 2019-09-27 | 2021-04-01 | Skyworks Solutions, Inc. | Stacked acoustic wave resonator package with laser-drilled vias |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115554985A (en) * | 2022-09-15 | 2023-01-03 | 中国人民解放军国防科技大学 | Gas-phase explosive sensitive adsorption material and preparation method thereof, gas-phase explosive sensing chip and application thereof |
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Application publication date: 20210810 |