CN105977038A - Stretchable super capacitor with porous structure and preparation method of stretchable super capacitor - Google Patents
Stretchable super capacitor with porous structure and preparation method of stretchable super capacitor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000003990 capacitor Substances 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000003054 catalyst Substances 0.000 claims abstract description 11
- 239000003792 electrolyte Substances 0.000 claims abstract description 10
- 239000011245 gel electrolyte Substances 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 4
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 3
- 238000003825 pressing Methods 0.000 claims abstract description 3
- 239000002238 carbon nanotube film Substances 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 13
- 239000005977 Ethylene Substances 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 7
- 239000003638 chemical reducing agent Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000035699 permeability Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000000233 ultraviolet lithography Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
The invention belongs to the technical field of super capacitors, and particularly discloses a stretchable super capacitor with a porous structure and a preparation method of the stretchable super capacitor. A catalyst substrate with the porous structure is obtained by ultraviolet lithography and electron beam evaporation coating technologies; controllable growth is carried out through a chemical vapor deposition method to obtain a carbon nanotube array with the porous structure; and carbon nanotube thin-film electrodes are finally obtained by pressing and stripping. Porous thin films are taken as the electrodes; one side of each electrode is coated with a layer of gel electrolyte; and two electrodes coated with the electrolyte are finally assembled to obtain the porous structure-based stretchable super capacitor. According to the prepared super capacitor, the capacity can still be maintained at 98.3% after 140% large deformation stretching for 3,000 times; voltage and current of the super capacitor can be regulated and controlled by changing the structures of the thin-film electrodes; and meanwhile, the stretchable super capacitor has good permeability, can be used as an energy supply device of a wearable device and has a wide application prospect.
Description
Technical field
The invention belongs to supercapacitor technologies field, be specifically related to a kind of stretchable ultracapacitor with loose structure and preparation method thereof.
Background technology
At present, stretchable development of electronic devices is rapid, has broad application prospects, such as, can be applicable to intelligent inductor, flexible display and artificial skin etc..Ultracapacitor, as a kind of important energy storage device, is widely used in portable electric appts.Traditional ultracapacitor is the heaviest, it is difficult to meet the requirement of wearable electronic device.And in recent years, stretchable ultracapacitor, due to its flexible height, light weight, wearable, has been obtained for paying close attention to widely.Usual method is the tensility by active material deposits to realize on elastic matrix ultracapacitor.But, this method there is also some challenges, and such as, in drawing process, the mechanical performance of electrode material and matrix is not mated；Matrix does not has any contribution to the electrochemical storage performance of ultracapacitor, but adds unnecessary quality and volume；May be only available for some sufficiently flexible, can be formed required for the material of wave structure.
In nature, various biomaterials give people in the development of advanced material and much inspire, and realize different functions especially by designing different structures.Wherein, loose structure, represent as the typical structure of one, refer to, in two dimension or three dimensional structure, there is the hole of opening and closing.The structure of this uniqueness can be resisted such as bending and the deformation on a large scale of stretching.Such as, the Cornu Cervi of North America elk has a kind of porous bone, is adapted to the large deformation under attacking；Bone and the feather of bird are also made up of loose structure, can resist bending, stretching and other deformation met with during flight.
Naturally inspired, from there through design electrode, loose structure will be made by carbon nano-tube film, be prepared for a kind of without the stretchable ultracapacitor of substrate.
Summary of the invention
It is an object of the invention to provide a kind of nonelastic substrate and the stretchable ultracapacitor with loose structure of good performance and preparation method thereof.
The stretchable ultracapacitor preparation method with loose structure that the present invention provides, specifically comprises the following steps that
(1) ultraviolet photolithographic technology is utilized, photoetching in silicon chip substrate, obtain the template with loose structure；
(2) utilize electron beam evaporation deposition technology, above-mentioned template is deposited with aluminium sesquioxide and the thin film of ferrum nano thickness, obtains the catalyst substrate of loose structure；
(3) use chemical vapour deposition technique, using argon as carrier gas, ethylene as carbon source, hydrogen as reducing agent, deposition of carbon nanotubes array in above-mentioned substrate；
(4) carbon nano pipe array to above-mentioned loose structure, pressing is peeled off, is obtained the carbon nano-tube film of loose structure；
(5) using above-mentioned carbon nano-tube film as electrode, coat layer of gel electrolyte in its side, by the electrode assembling of two blocks of coating electrolyte, obtain the stretchable ultracapacitor with loose structure.
In step (1), described in the template of loose structure that obtains be porous rectangle, and rectangle size dimension scope is 1 micron to 10 centimetres, and length-width ratio is 0.1 to 10.
In step (3), described chemical vapour deposition technique, using argon as carrier gas, ethylene is as carbon source, and hydrogen is as reducing agent, and wherein argon gas flow is 350-450sccm, and ethylene gas flow is 15-40sccm, and hydrogen gas flow is 75-100sccm.Reaction temperature is 700-800 degree Celsius, and the response time is 10-150 minute.The height of the carbon nano pipe array prepared is 200-2000 micron.
In step (4), the thickness of described carbon nano-tube film is 10-80 micron.
In step (5), described gel electrolyte is polyvinyl alcohol phosphoric acid electrolyte.
The stretchable capacitor with loose structure prepared according to above-mentioned preparation method, in the case of nonelastic substrate, still can carry out the stretching of high extensibility；This capacitor arrangement is stable, can carry out the stretching that is repeated over a thousand times and not have significant performance downward trend；This capacitor has breathability, has broad prospects at wearable device functional area.
It is an advantage of the current invention that:
A kind of novel stretchable ultracapacitor is prepared by designing bionical loose structure.This ultracapacitor is capable of bigger amount of tension under the conditions of not using elastic matrix.And this ultracapacitor demonstrates good chemical property, even if still keeping good performance in the case of big amount of tension, after having carried out the stretching that 3000 deflections are 140%, chemical property still can keep 98.3%.Meanwhile, loose structure makes ultracapacitor have breathability and water penetration, and this has great importance in fields such as wearable electronic devices for applying.
Accompanying drawing explanation
Fig. 1, the pictorial diagram under the loose structure stretchable carbon nano-tube film electrode pulled out condition prepared.
Fig. 2, the relation between the loose structure stretchable carbon nano-tube film electrode size and the amount of tension that prepare.
Fig. 3, the loose structure stretchable carbon nano-tube film electrode stretch-proof performance characterization prepared.Wherein, the resistance under (a) pulled out condition and the relation between strain；B () resistance and drawing numbers are constant in amount of tension is relation when 140%.
Fig. 4, the present invention has the Electrochemical Characterization under deformation condition of the stretchable ultracapacitor of loose structure.Wherein, (a) increases to 180 at angle of bend from 0oTime constant current charge-discharge curve；(b) strain from 0 increase to 140% time cyclic voltammetry curve.
Fig. 5, the present invention has the long-acting Electrochemical Characterization under deformation condition of the stretchable ultracapacitor of loose structure.Wherein, (a) in amount of tension the constant situation of change of electric capacity after stretching repeatedly when being 140%；B () amount of tension is the cycle performance of the ultracapacitor of 140%.
Fig. 6, the present invention has the stretchable ultracapacitor of loose structure by electrode design controllable voltage current window.Wherein, (a) and (b) increases voltage in parallel；C () and (d) increases electric current by series connection；E () and (f) increases electric current and voltage simultaneously.
Fig. 7, the present invention has the stretchable ultracapacitor of loose structure and powers commercial electronic product.Wherein, (a) and (b) " watchband " is worn in wrist, the photo that in the middle of arm and arm top powers.
Detailed description of the invention
Embodiment
1
(1) there is the preparation of the catalyst substrate of loose structure
First spin coating one layer photoetching glue on silicon chip, heats in the thermal station of 90 degrees Celsius 2 minutes and removes solvent；Placing the mask plate of the loose structure with long 10 millimeters, wide 2 millimeters, live width 1 millimeter directly over the silicon chip with photoresist obtained, the structure that concrete length and width represent is shown in Fig. 1 illustration, the exposed under UV light under 365 to 436 nano wave lengths 6 seconds；The aqueous developer solution being statically placed in 2.38 mass percents is developed；The silicon chip that the part photoresist obtained covers is carried out electron beam vacuum evaporation and deposits aluminium sesquioxide and the ferrum of 1.2 nano thickness of 5 nano thickness；Finally removing photoresist with ethanol, i.e. obtain the catalyst substrate of loose structure, the size of one of them cell orifice is long 10 millimeters, wide 2 millimeters, live width 1 millimeter.
(2) there is the preparation of the carbon nano-tube film of loose structure
Use chemical vapour deposition technique, using argon as carrier gas, ethylene is as carbon source, hydrogen is as reducing agent, wherein argon gas flow is 400sccm, and ethylene gas flow is 30sccm, and hydrogen gas flow is 90sccm, after growing 80 minutes at 750 degrees c, obtain the carbon nano pipe array with loose structure.This array is compacted and i.e. will can obtain the carbon nano-tube film electrode with loose structure after its stripping silicon chip substrate, as shown in Figure 2.This thickness of electrode is 38 microns.Prepare porous carbon nano-tube film flexible, matrix self-supporting can be needed not rely on and there is tensility.The carbon nano-tube film maximum tension amount of this porous is 140%.In drawing process, this carbon nano-tube film demonstrates the most stable electric property, even if in the case of strain has been up to 140%, resistance variations is still less than 1%, as shown in Fig. 3 (a).And after being stretched beyond 10000 times, resistance is without significant change, as shown in Figure 3 (b).
(3) there is the preparation of the capacitor of loose structure
Carbon nano-tube film electrode side is coated one layer of phosphoric acid/polyvinyl alcohol (wherein, phosphoric acid quality mark is 10%) gel electrolyte, the electrode assembling of two blocks of coating electrolyte is obtained the stretchable ultracapacitor of porous.
The ultracapacitor prepared by the carbon nano-tube film electrode of porous has higher chemical property and has high stability under deformation condition.The ratio electric capacity of this capacitor is 42.4 method every gram, and along with angle of bend increases to 180 from 0o, or strain increases to 140% by 0, and charging and discharging curve and cyclic voltammetry curve are held essentially constant, as shown in Fig. 4 (a) and (b).We study the most again its long-term stability energy in a stretched state.This capacitor, after having carried out the stretching repeatedly that 3000 deflections are 140%, still can be maintained at 98.3% than electric capacity, as shown in Fig. 5 (a) well.Even at the state of stretching, after circulating at 45000 times, the ratio electric capacity of ultracapacitor is still held essentially constant, as shown in Fig. 5 (b).
Embodiment 2:
(1) there is the preparation of the catalyst substrate of loose structure
First spin coating one layer photoetching glue on silicon chip, heats in the thermal station of 90 degrees Celsius 2 minutes and removes solvent；Placing the mask plate of the loose structure with long 10 millimeters, wide 2 millimeters, live width 1 millimeter directly over the silicon chip with photoresist obtained, the structure that concrete length and width represent is shown in Fig. 1 illustration, the exposed under UV light under 365 to 436 nano wave lengths 6 seconds；The aqueous developer solution being statically placed in 2.38 mass percents is developed；The silicon chip that the part photoresist obtained covers is carried out electron beam vacuum evaporation and deposits aluminium sesquioxide and the ferrum of 1.2 nanometer thickness of 5 nanometer thickness；Finally removing photoresist with ethanol and i.e. can get the catalyst substrate of loose structure, the size of one of them cell orifice is long 10 millimeters, wide 2 millimeters, live width 1 millimeter.
(2) there is the preparation of the carbon nano-tube film of loose structure
Use chemical vapour deposition technique using argon as carrier gas, ethylene is as carbon source, hydrogen is as reducing agent, wherein argon gas flow is 400sccm, ethylene gas flow is 30sccm, hydrogen gas flow is 90sccm, after growing 80 minutes at 750 degrees c, obtains the carbon nano pipe array with loose structure.This array is compacted and after its stripping silicon chip substrate, i.e. will can obtain the carbon nano-tube film electrode with loose structure.
(3) there is the preparation of the controlled capacitor of the voltage x current window of loose structure
The original porous carbon nano-tube film unit of repetition is gradually increased, the most again at one layer of phosphoric acid/polyvinyl alcohol of side coating (wherein, phosphoric acid quality mark is 10%) gel electrolyte, the electrode assembling of two blocks of coating electrolyte is obtained ultracapacitor, as shown in Figure 6 (a).Fig. 6 (b) shows, under same electric current, its discharge time increases.
By cutting porous carbon nano-tube film electrode simply, as shown in Figure 6 (c), six original ultracapacitors of having connected are equivalent to.The ultracapacitor prepared based on this structure, output voltage adds 6 times, as shown in Fig. 6 (d).
Output electric current and the voltage of capacitor can be improved, as shown in Figure 6 (e) and (f) by the overlay area of design electrolyte further simultaneously.
Stretchable porous ultracapacitor can also be effectively to wearable and portable set charging.Such as, Fig. 7 is shown that one and combines series connection and porous ultracapacitor in parallel, and it can be as " watchband " of a commercial power sublist, and after charging reaches 4 volts, " watchband " can be successfully driven electronic watch.Due to the tensility of " watchband ", it can be used in the crowd that wrist varies in size.In addition, " watchband " can also be further stretched to arm.Owing to loose structure imparts the function that ultracapacitor is ventilative, it is expected to be used for wearable electronic equipment and electronic skin.
Embodiment
3
(1) there is the preparation of the catalyst substrate of loose structure
First spin coating one layer photoetching glue on silicon chip, heats in the thermal station of 90 degrees Celsius 2 minutes and removes solvent；The mask plate of the loose structure with long 20 microns, wide 2 microns, live width 1 micron, the exposed under UV light under 365 to 436 nano wave lengths 6 seconds is placed directly over the silicon chip with photoresist obtained；The aqueous developer solution being statically placed in 2.38 mass percents is developed；The silicon chip that the part photoresist obtained covers is carried out electron beam vacuum evaporation and deposits aluminium sesquioxide and the ferrum of 1.2 nanometer thickness of 5 nanometer thickness；Finally removing photoresist with ethanol and i.e. can get the catalyst substrate of loose structure, the size of one of them cell orifice is long 20 microns, wide 2 microns, live width 1 micron.
(2) there is the preparation of the carbon nano-tube film of loose structure
Use chemical vapour deposition technique using argon as carrier gas, ethylene is as carbon source, hydrogen is as reducing agent, wherein argon gas flow is 350sccm, ethylene gas flow is 15sccm, hydrogen gas flow is 75sccm, after growing 10 minutes, obtains the carbon nano pipe array with loose structure under 800 degrees Celsius.Being compacted by this array and i.e. will can obtain the carbon nano-tube film electrode with loose structure after its stripping silicon chip substrate, this membrane electrode thickness is 10 microns.
(3) there is the preparation of the capacitor of loose structure
Carbon nano-tube film electrode side is coated one layer of phosphoric acid/polyvinyl alcohol (wherein, phosphoric acid quality mark is 10%) gel electrolyte, the electrode assembling of two blocks of coating electrolyte is obtained the stretchable ultracapacitor of porous.
Embodiment
4
(1) there is the preparation of the catalyst substrate of loose structure
First spin coating one layer photoetching glue on silicon chip, heats in the thermal station of 90 degrees Celsius 2 minutes and removes solvent；Placing the mask plate of the loose structure with long 1 millimeter, wide 10 millimeters, live width 1 millimeter directly over the silicon chip with photoresist obtained, the structure that concrete length and width represent is shown in Fig. 1 illustration, the exposed under UV light under 365 to 436 nano wave lengths 6 seconds；The aqueous developer solution being statically placed in 2.38 mass percents is developed；The silicon chip that the part photoresist obtained covers is carried out electron beam vacuum evaporation and deposits aluminium sesquioxide and the ferrum of 1.2 nanometer thickness of 5 nanometer thickness；Finally removing photoresist with ethanol and i.e. can get the catalyst substrate of loose structure, the size of one of them cell orifice is long 1 millimeter, wide 10 millimeters, live width 1 millimeter.
(2) there is the preparation of the carbon nano-tube film of loose structure
Use chemical vapour deposition technique using argon as carrier gas, ethylene is as carbon source, hydrogen is as reducing agent, wherein argon gas flow is 450sccm, ethylene gas flow is 40sccm, hydrogen gas flow is 100sccm, after growing 150 minutes, obtains the carbon nano pipe array with loose structure under 700 degrees Celsius.Being compacted by this array and i.e. will can obtain the carbon nano-tube film electrode with loose structure after its stripping silicon chip substrate, this membrane electrode thickness is 80 microns.
(3) there is the preparation of the capacitor of loose structure
Carbon nano-tube film electrode side is coated one layer of phosphoric acid/polyvinyl alcohol (wherein, phosphoric acid quality mark is 10%) gel electrolyte, the electrode assembling of two blocks of coating electrolyte is obtained the stretchable ultracapacitor of porous.
Claims (6)
1. stretchable ultracapacitor with loose structure and preparation method thereof, it is characterised in that specifically comprise the following steps that
(1) ultraviolet photolithographic technology is utilized, photoetching in silicon chip substrate, obtain the template with loose structure；
(2) utilize electron beam evaporation deposition technology, above-mentioned template is deposited with aluminium sesquioxide and the iron thin film of nano thickness, obtains the catalyst substrate of loose structure；
(3) use chemical vapour deposition technique, using argon as carrier gas, ethylene as carbon source, hydrogen as reducing agent, deposition of carbon nanotubes array in above-mentioned substrate；
(4) carbon nano pipe array to above-mentioned loose structure, pressing is peeled off, is obtained the carbon nano-tube film of loose structure；
(5) using above-mentioned carbon nano-tube film as electrode, coat layer of gel electrolyte in its side, by the electrode assembling of two blocks of coating electrolyte, obtain the stretchable ultracapacitor with loose structure.
Preparation method the most according to claim 1, it is characterised in that in step (1), the template of described loose structure is porous rectangle, and rectangle size dimension scope is 1 micron to 10 centimetres, and length-width ratio is 0.1 to 10.
Preparation method the most according to claim 1 and 2, it is characterised in that in step (3), described argon gas flow is 350-450sccm, and ethylene gas flow is 15-40sccm, and hydrogen gas flow is 75-100sccm；Depositing temperature is 700-800 degree Celsius, and the time is 10-150 minute；The height of carbon nano pipe array is 200-2000 micron.
Preparation method the most according to claim 3, it is characterised in that in step (4), the thickness of described carbon nano-tube film is 10-80 micron.
5., according to the preparation method described in claim 1,2 or 4, it is characterised in that in step (5), described gel electrolyte is polyvinyl alcohol phosphoric acid electrolyte.
6. the stretchable ultracapacitor with loose structure obtained by preparation method described in claim 1-5.
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| CN109887757A (en) * | 2019-02-19 | 2019-06-14 | 五邑大学 | A kind of integral array type sensing energy storage device and preparation method thereof |
| CN110890224A (en) * | 2019-11-05 | 2020-03-17 | 西北大学 | Molybdenum diselenide/carbon nanotube array composite electrode, preparation method and application |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2018187622A (en) * | 2017-05-08 | 2018-11-29 | ツィンファ ユニバーシティ | Manufacturing method of three-dimensional porous composite material |
| CN108335924A (en) * | 2018-01-24 | 2018-07-27 | 复旦大学 | A kind of flexible super capacitor and preparation method thereof with self-stick notes function |
| CN108335924B (en) * | 2018-01-24 | 2020-05-12 | 复旦大学 | Flexible supercapacitor with sticky note function and preparation method thereof |
| CN109887757A (en) * | 2019-02-19 | 2019-06-14 | 五邑大学 | A kind of integral array type sensing energy storage device and preparation method thereof |
| CN110890224A (en) * | 2019-11-05 | 2020-03-17 | 西北大学 | Molybdenum diselenide/carbon nanotube array composite electrode, preparation method and application |
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