CN113238080A - All-solid-state pulse current injection source based on light-triggered multi-gate semiconductor switch - Google Patents
All-solid-state pulse current injection source based on light-triggered multi-gate semiconductor switch Download PDFInfo
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Abstract
The invention discloses an all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch, which adopts a Marx technical route, adopts a multi-stage capacitor structure, adopts a six-stage capacitor structure and comprises a capacitor Cf1, a capacitor Cf2, a capacitor Cf3, a capacitor Cf4, a capacitor Cf5 and a capacitor Cf6, wherein each capacitor is correspondingly connected with a light-triggered multi-gate semiconductor switch LIMS in series; the loop structure further comprises a loop structure inductor Lc and a load R; further comprising: the high-voltage power supply Vdc, the pulse forming capacitors and inductors Lc0, Lc1, Lc2, Lc3, Lc4, Lc5, Lc6, Lc7, Lc8, Lc9 and Lc10 and the laser. The all-solid-state pulse current injection source realizes continuous adjustment of the amplitude of the output current and has wide-range amplitude adjustment.
Description
Technical Field
The invention relates to the field of industrial application, in particular to a high-altitude nuclear electromagnetic pulse generation technology, and specifically relates to an all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch.
Background
The high-altitude nuclear electromagnetic pulse has the advantages of fast rising edge and large frequency band amplitude, and is very easy to be coupled with electronic equipment and the like, so that the complex effects of damage, disturbance, interference and the like on internal circuits, electronic components, radio frequency sensors and the like of the electronic equipment are caused. In addition, modern electronic equipment is produced and used more and more, electromagnetic interference among the equipment is stronger and stronger, the use environment is worse and worse, and the anti-interference requirement on the electronic equipment is higher and higher. In the electromagnetic pulse effect test, the long cable structure is not easy to be sufficiently excited by the radiation environment, and therefore, a Pulse Current Injection (PCI) test method has been developed as a supplement to the irradiation method. The pulse current injection test method adopts a direct or indirect method to inject pulse current into the tested equipment so as to simulate vulnerability evaluation and analysis of various strong electromagnetic radiation environments on an electronic system, and is proved to be a very effective test method in the technical field of electromagnetic compatibility problem area diagnosis and hardware reinforcement evaluation.
A traditional pulse current injection source generally adopts a Marx generator technical route, a Marx generator is adopted to charge a pulse forming capacitor, the pulse forming capacitor discharges to a load after reaching a peak value, a switch in the Marx generator generally adopts a gas switch, and in order to reduce the switch interval and obtain a fast front edge, the pulse forming switch generally adopts SF with high insulation strength6The output current amplitude can be adjusted to a certain extent by adjusting the air pressure of the switch, but the output current adjusting range is smaller; but also can affect the stability of the output characteristic of the pulse source, and is not suitable for the detection research of the electromagnetic pulse damage resistance threshold of the electronic equipment.
Disclosure of Invention
The technical problem to be solved by the invention is that the traditional pulse current injection source adopts a Marx generator technical route, and a pulse forming switch generally adopts SF with high insulation strength6Gas, the pressure of which can be adjusted to a certain extent by adjusting the switchThe amplitude of the output current is adjusted, but the adjustment range of the output current is smaller; but also the stability of the output characteristic of the pulse source is influenced; the method is not suitable for the detection research of the electromagnetic pulse damage resistance threshold of the electronic equipment. The invention aims to provide an all-solid-state pulse current injection source based on an optical trigger multi-gate semiconductor switch so as to realize continuous adjustment of the amplitude of output current.
Relevant patent information of all-solid-state pulse current injection sources based on optical triggering multi-gate semiconductor switches is not found in relevant documents and patent documents of high-altitude nuclear electromagnetic pulse source research.
The invention is realized by the following technical scheme:
an all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch is characterized in that the all-solid-state pulse current injection source adopts a Marx technical route, and is characterized in that the all-solid-state pulse current injection source adopts a multi-stage capacitor structure, and a pulse forming switch adopts the light-triggered multi-gate semiconductor switch;
the all-solid-state pulse current injection source charges each stage of Marx capacitor through the high-voltage power supply, after the Marx capacitor reaches a set voltage value, the laser outputs laser trigger light to trigger the multi-gate semiconductor switch, and each stage of Marx capacitor outputs energy to a load through the series discharge of the light trigger multi-gate semiconductor switch;
the all-solid-state pulse current injection source realizes that the output peak current has wide-range amplitude adjustment and good waveform consistency, the output peak current is continuously adjustable within the range of 0.1 kA-1 kA, the rise time is 18ns, and the pulse full width at half maximum is 520 ns.
The Light-triggered Multi-gate semiconductor Switch (LIMS) is a power electronic device, and is different from a traditional electrically-triggered thyristor, and the LIMS is triggered by laser, so that the starting time is short, and the anti-electromagnetic interference capability is strong. The LIMS is almost the same in structure as a conventional electrically triggered thyristor except for a gate region, which has no metal, so that laser generates a large number of photogenerated carriers through the region, thereby turning on the LIMS.
The invention designs an all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch, wherein the all-solid-state pulse current injection source adopts a Marx technical route, the switch adopts a light-triggered multi-gate semiconductor switch, and the specific working principle is as follows: the high-voltage power supply charges each stage of Marx capacitor, after the Marx capacitor reaches a set voltage value, the laser outputs laser trigger light to trigger the multi-gate semiconductor switch LIMS, each stage of Marx capacitor outputs energy to a load through the light trigger multi-gate semiconductor switch LIMS in series discharge, and a current waveform meeting technical indexes is obtained.
The invention has reasonable structure and realizes the continuous adjustment of the amplitude of the output current. The all-solid-state pulse current injection source with wide-range amplitude regulation capability and good waveform consistency, which is researched by the invention, can meet the real requirements of continuously perfect field test examination and vulnerability evaluation of the strong electromagnetic pulse effect, and particularly meet the application requirements of in-service and fixed equipment, high-clustering equipment, poor traffic convenience and short examination time window.
As a further preferable scheme, the all-solid-state pulse current injection source adopts a six-stage capacitor structure, and comprises a capacitor Cf1, a capacitor Cf2, a capacitor Cf3, a capacitor Cf4, a capacitor Cf5 and a capacitor Cf6, and each capacitor is correspondingly connected in series with a light-triggered multi-gate semiconductor switch LIMS; also includes a load R; wherein:
a first terminal of the capacitor Cf1 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS1, a second terminal of the capacitor Cf1 is grounded, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS1 is connected to the second terminal of the capacitor Cf2, a first terminal of the capacitor Cf2 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS2, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS2 is connected to the second terminal of the capacitor Cf3, a first terminal of the capacitor Cf3 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS3, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS3 is connected to the second terminal of the capacitor Cf4, a first terminal of the capacitor Cf4 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS4, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS4 is connected to the second terminal of the capacitor Cf 68629, a first terminal of the capacitor Cf5 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS6, the first end of the capacitor Cf6 is connected with the second end of the light-triggered multi-gate semiconductor switch LIMS6, the first end of the light-triggered multi-gate semiconductor switch LIMS6 is connected with a load R, and the load R is grounded;
further comprising: high-voltage power supply Vdc, pulse-forming capacitance inductors Lc0, Lc1, Lc2, Lc3, Lc4, Lc5, Lc6, Lc7, Lc8, Lc9, Lc10 and a laser, wherein:
the negative electrode of the high-voltage power supply Vdc is grounded, the positive electrode of the high-voltage power supply Vdc is connected with the first end of the Lc0, the second end of the Lc0 is connected with the first end of the Lc1, and the second end of the Lc0 is also connected with the first end of the Cf 6; the second end of Lc1 is connected with the first end of Lc2, and the second end of Lc1 is also connected with the first end of Cf 5; the second end of Lc2 is connected with the first end of Lc3, and the second end of Lc2 is also connected with the first end of Cf 4; the second end of Lc3 is connected with the first end of Lc4, and the second end of Lc3 is also connected with the first end of Lc 3; the second end of Lc4 is connected with the first end of Lc5, and the second end of Lc4 is also connected with the first end of Lc 2; the second end of Lc5 is connected to the first end of Cf 1;
the first end of Lc6 is connected with the second end of Cf6, the second end of Lc6 is connected with the first end of Lc7, and the second end of Lc6 is also connected with the second end of Cf 5; the second end of Lc7 is connected with the first end of Lc8, and the second end of Lc7 is also connected with the second end of Cf 4; the second end of Lc8 is connected with the first end of Lc9, and the second end of Lc8 is also connected with the second end of Cf 3; the second end of Lc9 is connected with the first end of Lc10, and the second end of Lc9 is also connected with the second end of Cf 2; the second end of Lc10 is connected to the second end of Cf 1.
As a further preferable scheme, the light-triggered multi-gate semiconductor switch LIMS is composed of two LIMS chips, the diameter of each LIMS chip is 23mm, and the thickness of each LIMS chip is 1 mm.
As a further preferable scheme, the waveform of the all-solid-state pulse current injection source meets the requirement of a dual-exponential pulse waveform, and the condition is as follows:
in the formula, R is a load resistor, Lc is the inductance value of each stage, and C is the capacitance value of each stage.
As a further preferred scheme, the pulse rising edge t of the all-solid-state pulse current injection sourcerComprises the following steps:
wherein:
wherein α is a coefficient.
As a further preferable scheme, under the conditions that the working voltage of the all-solid-state pulse current injection source is 4kV and the pulse forming capacitance is 0.1uF, the discharge current peak value reaches 2.5kA, the current change rate di/dt is 14kA/μ s, the conduction delay time is 140ns, and the delay time jitter is less than 1 ns.
As a further preferred solution, a Light-triggered Multi-gate semiconductor Switch (LIMS) is a power electronic device, and unlike a traditional electrically-triggered thyristor, LIMS is triggered by laser, and has a short turn-on time and a strong anti-electromagnetic interference capability. The LIMS is almost the same in structure as a conventional electrically triggered thyristor except for a gate region, which has no metal, so that laser generates a large number of photogenerated carriers through the region, thereby turning on the LIMS.
Preferably, the optically triggered multi-gate semiconductor switch is made of silicon material and has an npnp structure.
As a further preferred solution, the all-solid-state pulsed current injection source is used for a high altitude nuclear electromagnetic pulse source.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the all-solid-state pulse current injection source adopts a Marx technical route, a switch adopts a light-triggered multi-gate semiconductor switch, a high-voltage power supply (Vdc) charges capacitors at each stage of the Marx, after a set voltage value is reached, a laser outputs laser trigger light to trigger a multi-gate semiconductor switch LIMS, the capacitors at each stage of the Marx output energy to a load through the LIMS serial discharge, and a current waveform meeting technical indexes is obtained.
2. The invention has reasonable structure and realizes the continuous adjustment of the amplitude of the output current. The all-solid-state pulse current injection source with wide-range amplitude regulation capability and good waveform consistency, which is researched by the invention, can meet the real requirements of continuously perfect field test examination and vulnerability evaluation of the strong electromagnetic pulse effect, and particularly meet the application requirements of in-service and fixed equipment, high-clustering equipment, poor traffic convenience and short examination time window.
3. The full-solid-state pulse current injection source realizes that the output peak current has wide-range amplitude adjustment and good waveform consistency, the output peak current is continuously adjustable within the range of 0.1 kA-1 kA, the rise time is 18ns, and the pulse half-height width is 520 ns.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is a schematic circuit diagram of an all-solid-state pulse current injection source based on an optical trigger multi-gate semiconductor switch according to the present invention.
FIG. 2 is a diagram of the waveforms for an optically triggered multi-gate semiconductor switch and discharge in accordance with an embodiment of the present invention.
FIG. 3 is a waveform diagram of an output current of an all-solid-state pulse current injection source according to an embodiment of the present invention.
Detailed Description
Hereinafter, the term "comprising" or "may include" used in various embodiments of the present invention indicates the presence of the invented function, operation or element, and does not limit the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the present invention, the terms "comprises," "comprising," "includes," "including," "has," "having" and their derivatives are intended to mean that the specified features, numbers, steps, operations, elements, components, or combinations of the foregoing, are only meant to indicate that a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as first excluding the existence of, or adding to the possibility of, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
In various embodiments of the invention, the expression "or" at least one of a or/and B "includes any or all combinations of the words listed simultaneously. For example, the expression "a or B" or "at least one of a or/and B" may include a, may include B, or may include both a and B.
Expressions (such as "first", "second", and the like) used in various embodiments of the present invention may modify various constituent elements in various embodiments, but may not limit the respective constituent elements. For example, the above description does not limit the order and/or importance of the elements described. The foregoing description is for the purpose of distinguishing one element from another. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present invention.
It should be noted that: if it is described that one constituent element is "connected" to another constituent element, the first constituent element may be directly connected to the second constituent element, and a third constituent element may be "connected" between the first constituent element and the second constituent element. In contrast, when one constituent element is "directly connected" to another constituent element, it is understood that there is no third constituent element between the first constituent element and the second constituent element.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. The terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning that is consistent with their contextual meaning in the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in various embodiments of the present invention.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
As shown in fig. 1, the all-solid-state pulse current injection source based on the light-triggered multi-gate semiconductor switch of the present invention adopts a Marx technology route, and is characterized in that the all-solid-state pulse current injection source adopts a multi-level capacitor structure, and the pulse forming switch adopts the light-triggered multi-gate semiconductor switch;
the all-solid-state pulse current injection source charges each stage of Marx capacitor through the high-voltage power supply, after the Marx capacitor reaches a set voltage value, the laser outputs laser trigger light to trigger the multi-gate semiconductor switch, and each stage of Marx capacitor outputs energy to a load through the series discharge of the light trigger multi-gate semiconductor switch;
the all-solid-state pulse current injection source realizes wide-range amplitude adjustment of output peak current and good waveform consistency, the output peak current is continuously adjustable within the range of 0.1 kA-1 kA, the rise time is about 18ns, and the pulse full width at half maximum is about 520 ns.
The Light-triggered Multi-gate semiconductor Switch (LIMS) is a power electronic device, and is different from a traditional electrically-triggered thyristor, and the LIMS is triggered by laser, so that the starting time is short, and the anti-electromagnetic interference capability is strong. The LIMS is almost the same in structure as a conventional electrically triggered thyristor except for a gate region, which has no metal, so that laser generates a large number of photogenerated carriers through the region, thereby turning on the LIMS.
When in implementation: the invention designs an all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch, wherein the all-solid-state pulse current injection source adopts a Marx technical route, the switch adopts the light-triggered multi-gate semiconductor switch, a high-voltage power supply (Vdc) charges capacitors at each stage of Marx, after a set voltage value is reached, a laser outputs laser trigger light to trigger the multi-gate semiconductor switch LIMS, the capacitors at each stage of Marx output energy to a load through LIMS serial discharge of the light-triggered multi-gate semiconductor switch, and a current waveform meeting technical indexes is obtained.
The specific working principle is as follows: the high-voltage power supply charges each stage of Marx capacitor, after the Marx capacitor reaches a set voltage value, laser triggering light is output through the laser to trigger the multi-gate semiconductor switch LIMS, each stage of Marx capacitor outputs energy to a load through the light triggering multi-gate semiconductor switch LIMS in series discharging, and continuous adjustment of the pulse source output peak current can be achieved through adjustment of the charging voltage of the energy storage capacitor.
The invention has reasonable structure and realizes the continuous adjustment of the amplitude of the output current. The all-solid-state pulse current injection source with wide-range amplitude adjustment capability and good waveform consistency, which is researched by the invention, can meet the practical requirements of field test examination and vulnerability assessment of the strong electromagnetic pulse effect, and particularly meets the application requirements of in-service and fixed equipment, high-clustering equipment, poor traffic convenience and short examination time window.
Example 2
As shown in fig. 1 to fig. 3, the present embodiment is different from embodiment 1 in that the all-solid-state pulse current injection source in the present embodiment adopts a six-stage capacitor structure, which includes six capacitors Cf1, a capacitor Cf2, a capacitor Cf3, a capacitor Cf4, a capacitor Cf5, and a capacitor Cf6, and each capacitor is connected in series with a corresponding one of the light-triggered multi-gate semiconductor switches LIMS; the loop structure further comprises a loop structure inductor Lc and a load R;
in an actual circuit, a loop structure inductor Lc is an inductance in a component in a loop and a connection inductance between the components; lc is here equivalent to the inductance value mentioned above when the simulation is performed.
Wherein the connection of each components is as follows:
a first terminal 1 of the capacitor Cf1 is connected to the second terminal 2 of the photo-triggered multi-gate semiconductor switch LIMS1, a second terminal 2 of the capacitor Cf1 is grounded, a first terminal 1 of the photo-triggered multi-gate semiconductor switch LIMS1 is connected to the second terminal 2 of the capacitor Cf2, a first terminal 1 of the capacitor Cf2 is connected to the second terminal 2 of the photo-triggered multi-gate semiconductor switch LIMS2, a first terminal 1 of the photo-triggered multi-gate semiconductor switch LIMS2 is connected to the second terminal 2 of the capacitor Cf3, a first terminal 1 of the capacitor Cf3 is connected to the second terminal 2 of the photo-triggered multi-gate semiconductor switch LIMS3, a first terminal 1 of the photo-triggered multi-gate semiconductor switch LIMS3 is connected to the second terminal 2 of the capacitor Cf4, a first terminal 1 of the capacitor Cf4 is connected to the second terminal 2 of the photo-triggered multi-gate semiconductor switch LIMS4, a first terminal 1 of the photo-triggered multi-gate semiconductor switch LIMS4 is connected to the second terminal 2 of the capacitor Cf5, a second terminal of the photo-triggered multi-gate semiconductor switch clf 5 is connected to the second terminal 5, the first end 1 of the light-triggered multi-gate semiconductor switch LIMS5 is connected with the second end 2 of the capacitor Cf6, the first end 1 of the capacitor Cf6 is connected with the second end 2 of the light-triggered multi-gate semiconductor switch LIMS6, the first end 1 of the light-triggered multi-gate semiconductor switch LIMS6 is connected with the second end 2 of the loop structure inductor Lc, the first end 1 of the loop structure inductor Lc is connected with a load R, and the load R is grounded;
further comprising: high-voltage power supply Vdc, pulse-forming capacitance inductors Lc0, Lc1, Lc2, Lc3, Lc4, Lc5, Lc6, Lc7, Lc8, Lc9, Lc10 and a Marx laser, wherein:
the negative electrode of the high-voltage power supply Vdc is grounded, the positive electrode of the high-voltage power supply Vdc is connected with the first end 1 of the Lc0, the second end 2 of the Lc0 is connected with the first end 1 of the Lc1, and the second end 2 of the Lc0 is also connected with the first end 1 of the Cf 6; the second end 2 of Lc1 is connected to the first end 1 of Lc2, and the second end 2 of Lc1 is also connected to the first end 1 of Cf 5; the second end 2 of Lc2 is connected to the first end 1 of Lc3, and the second end 2 of Lc2 is also connected to the first end 1 of Cf 4; the second end 2 of Lc3 is connected with the first end 1 of Lc4, and the second end 2 of Lc3 is also connected with the first end 1 of Lc 3; the second end 2 of Lc4 is connected with the first end 1 of Lc5, and the second end 2 of Lc4 is also connected with the first end 1 of Lc 2; the second end 2 of Lc5 is connected to the first end 1 of Cf 1;
the first end 1 of Lc6 is connected to the second end 2 of Cf6, the second end 2 of Lc6 is connected to the first end 1 of Lc7, and the second end 2 of Lc6 is also connected to the second end 2 of Cf 5; the second end 2 of Lc7 is connected to the first end 1 of Lc8, and the second end 2 of Lc7 is also connected to the second end 2 of Cf 4; the second end 2 of Lc8 is connected to the first end 1 of Lc9, and the second end 2 of Lc8 is also connected to the second end 2 of Cf 3; the second end 2 of Lc9 is connected to the first end 1 of Lc10, and the second end 2 of Lc9 is also connected to the second end 2 of Cf 2; the second end 2 of Lc10 is connected to the second end 2 of Cf 1.
In this embodiment, the light-triggered multi-gate semiconductor switch LIMS is composed of two LIMS chips, the diameter of each LIMS chip is 23mm, and the thickness of each LIMS chip is 1 mm. Under the conditions that the capacitance of a discharge loop of the LIMS chip is 0.1 muF and the working voltage is 4kV, the peak value of discharge current of the LIMS chip reaches 2.5kA, the current change rate di/dt is 14 kA/mus, the conduction delay time is 140ns, and the delay time jitter is less than 1 ns.
In this embodiment, the waveform of the all-solid-state pulse current injection source meets the requirement of a dual-exponential pulse waveform, and the meeting condition is:
in the formula, R is a load resistor, Lc is the inductance value of each stage, and C is the capacitance value of each stage.
In this embodiment, the pulse rising edge t of the all-solid-state pulse current injection sourcerComprises the following steps:
wherein:
wherein α is a coefficient.
In this embodiment, tr is not more than 20ns, and the pulse width is 500 ns-550 ns.
Fig. 2 is a graph of light-triggered multi-gate semiconductor switch and discharge waveforms. Under the condition of working voltage of 4kV, the peak value of discharge current reaches 2.5kA, the current change rate di/dt is 14 kA/mu s, the conduction delay time is 140ns, and the delay time jitter is less than 1 ns.
FIG. 3 is a waveform diagram of the output current of the all-solid-state pulse current injection source of the present invention, in which the peak value of the output current of the all-solid-state pulse current injection source is continuously adjustable within the range of 0.1kA to 1kA, the rise time is about 18ns, and the pulse full width at half maximum is about 520 ns.
Fig. 3(a) is a waveform diagram of the peak value of the output current of the all-solid-state pulse current injection source at 0.1kA, and fig. 3(b) is a waveform diagram of the peak value of the output current of the all-solid-state pulse current injection source at 1 kA.
Example 3
As shown in fig. 1 to 3, the present embodiment is different from embodiment 1 in that the light-triggered multi-gate semiconductor switch in the present embodiment is made of a silicon material, and has an npnp structure, and a circular chip with a diameter of 23mm and a thickness of 1 mm.
The all-solid-state pulse current injection source is used for high-altitude nuclear electromagnetic pulse effect simulation.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. An all-solid-state pulse current injection source based on a light-triggered multi-gate semiconductor switch is characterized in that the all-solid-state pulse current injection source adopts a Marx technical route, and is characterized in that the all-solid-state pulse current injection source adopts a multi-stage capacitor structure, and a pulse forming switch adopts the light-triggered multi-gate semiconductor switch;
the all-solid-state pulse current injection source charges each stage of Marx capacitor through the high-voltage power supply, after the Marx capacitor reaches a set voltage value, the laser outputs laser trigger light to trigger the multi-gate semiconductor switch, and each stage of Marx capacitor outputs energy to a load through the series discharge of the light trigger multi-gate semiconductor switch; the all-solid-state pulse current injection source realizes wide-range amplitude adjustment of output peak current, and the output peak current is continuously adjustable within the range of 0.1 kA-1 kA.
2. The all-solid-state pulse current injection source based on the light-triggered multi-gate semiconductor switch is characterized in that the all-solid-state pulse current injection source adopts a six-stage capacitor structure and comprises a capacitor Cf1, a capacitor Cf2, a capacitor Cf3, a capacitor Cf4, a capacitor Cf5 and a capacitor Cf6, and each capacitor is connected with one light-triggered multi-gate semiconductor switch in series; the loop structure further comprises a loop structure inductor Lc and a load R; wherein:
a first terminal of the capacitor Cf1 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS1, a second terminal of the capacitor Cf1 is grounded, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS1 is connected to the second terminal of the capacitor Cf2, a first terminal of the capacitor Cf2 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS2, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS2 is connected to the second terminal of the capacitor Cf3, a first terminal of the capacitor Cf3 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS3, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS3 is connected to the second terminal of the capacitor Cf4, a first terminal of the capacitor Cf4 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS4, a first terminal of the photo-triggered multi-gate semiconductor switch LIMS4 is connected to the second terminal of the capacitor Cf 68629, a first terminal of the capacitor Cf5 is connected to the second terminal of the photo-triggered multi-gate semiconductor switch LIMS6, the first end of the capacitor Cf6 is connected with the second end of the light-triggered multi-gate semiconductor switch LIMS6, the first end of the light-triggered multi-gate semiconductor switch LIMS6 is connected with a load R, and the load R is grounded;
further comprising: high-voltage power supply Vdc, inductors Lc0, Lc1, Lc2, Lc3, Lc4, Lc5, Lc6, Lc7, Lc8, Lc9, Lc10 and a laser, wherein:
the negative electrode of the high-voltage power supply Vdc is grounded, the positive electrode of the high-voltage power supply Vdc is connected with the first end of the Lc0, the second end of the Lc0 is connected with the first end of the Lc1, and the second end of the Lc0 is also connected with the first end of the Cf 6; the second end of Lc1 is connected with the first end of Lc2, and the second end of Lc1 is also connected with the first end of Cf 5; the second end of Lc2 is connected with the first end of Lc3, and the second end of Lc2 is also connected with the first end of Cf 4; the second end of Lc3 is connected with the first end of Lc4, and the second end of Lc3 is also connected with the first end of Lc 3; the second end of Lc4 is connected with the first end of Lc5, and the second end of Lc4 is also connected with the first end of Lc 2; the second end of Lc5 is connected to the first end of Cf 1;
the first end of Lc6 is connected with the second end of Cf6, the second end of Lc6 is connected with the first end of Lc7, and the second end of Lc6 is also connected with the second end of Cf 5; the second end of Lc7 is connected with the first end of Lc8, and the second end of Lc7 is also connected with the second end of Cf 4; the second end of Lc8 is connected with the first end of Lc9, and the second end of Lc8 is also connected with the second end of Cf 3; the second end of Lc9 is connected with the first end of Lc10, and the second end of Lc9 is also connected with the second end of Cf 2; the second end of Lc10 is connected to the second end of Cf 1.
3. The all-solid-state pulse current injection source based on the light-triggered multi-gate semiconductor switch is characterized in that the LIMS consists of two LIMS chips, the diameter of each LIMS chip is 23mm, and the thickness of each LIMS chip is 1 mm.
4. The all-solid-state pulse current injection source based on the optical trigger multi-gate semiconductor switch according to claim 2, wherein the waveform of the all-solid-state pulse current injection source meets the requirement of a double-exponential pulse waveform, and the requirement is that:
in the formula, R is a load resistor, Lc is the inductance value of each stage, and C is the capacitance value of each stage.
5. The all-solid-state pulse current injection source based on the optical trigger multi-gate semiconductor switch is characterized in that the pulse rising edge t of the all-solid-state pulse current injection sourcerComprises the following steps:
wherein:
wherein α is a coefficient.
6. The light-triggered multi-gate semiconductor switch of claim 3, wherein the peak discharge current of the single light-triggered multi-gate semiconductor switch chip is 2.5kA, the current change rate di/dt is 14kA/μ s, the turn-on delay time is 140ns, and the jitter of the delay time is less than 1ns under the conditions of the operating voltage of 4kV and the pulse forming capacitance of 0.1u F.
7. The all-solid-state pulse current injection source based on the light-triggered multi-gate semiconductor switch of claim 1, wherein a gate region of the light-triggered multi-gate semiconductor switch chip is free of metal, so that laser light can generate a large number of photon-generated carriers through the gate region, and the switch is turned on.
8. The all-solid-state pulse current injection source based on the light-triggered multi-gate semiconductor switch of claim 7, wherein the light-triggered multi-gate semiconductor switch is made of silicon material.
9. The all-solid-state pulsed current injection source based on the light-triggered multi-gate semiconductor switch according to claim 1, wherein the all-solid-state pulsed current injection source is used for nuclear electromagnetic pulse effect simulation.
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| CN114361287A (en) * | 2022-01-04 | 2022-04-15 | 中国工程物理研究院流体物理研究所 | Silicon-based light-triggered multi-gate semiconductor switch chip for high-temperature environment |
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