CN113237334A - High-temperature sintering equipment and method for ceramic substrate - Google Patents
High-temperature sintering equipment and method for ceramic substrate Download PDFInfo
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- CN113237334A CN113237334A CN202110353002.9A CN202110353002A CN113237334A CN 113237334 A CN113237334 A CN 113237334A CN 202110353002 A CN202110353002 A CN 202110353002A CN 113237334 A CN113237334 A CN 113237334A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0041—Chamber type furnaces specially adapted for burning bricks or pottery
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0041—Chamber type furnaces specially adapted for burning bricks or pottery
- F27B17/0075—Heating devices therefor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/0003—Linings or walls
- F27D1/0033—Linings or walls comprising heat shields, e.g. heat shieldsd
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0031—Treatment baskets for ceramic articles
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Furnace Charging Or Discharging (AREA)
Abstract
The invention discloses high-temperature sintering equipment for a ceramic substrate, which comprises a box body device, wherein a heating device is arranged on the box body device, a temperature detection device is used for monitoring the temperature in the box body device, the temperature detection device is electrically connected with the heating device, and a substrate bearing device is arranged at the bottom of the box body device; the substrate bearing device comprises a substrate bearing part, the substrate bearing part comprises a frame, the frame is internally divided into independent limiting frames by a plurality of mutually perpendicular dividing plates, a plurality of supporting rods used for bearing the ceramic substrate are arranged in the limiting frames, all the supporting rods are mutually parallel and are arranged at equal intervals, one end of each supporting rod is arranged on one edge of the frame, the other end of each supporting rod extends to the outer side of the other edge of the frame and is connected with a transmission assembly, a rotating hole matched with the supporting rods is formed in each dividing plate, the transmission assembly is connected with a power assembly, and the power assembly is arranged on the outer side of the box body device. In the sintering equipment, the qualification rate of the high-temperature sintering of the ceramic substrate is effectively increased.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to high-temperature sintering equipment and a sintering method of a ceramic substrate.
Background
The ceramic substrate is formed by taking alumina as a main material and adding a glass sintering aid, copper-aluminum alloy nano particles, rare earth oxide, a solvent, a plasticizer, a dispersant, a binder and the like. In most of the existing production enterprises, the sintering temperature of the ceramic substrate is controlled below 950 ℃, because the ceramic substrate shrinks along with the increase of the temperature when the ceramic substrate is sintered at the temperature above 950 ℃, and when the temperature reaches above 1600 ℃, the ceramic substrate does not continue to shrink, the physical property of the ceramic substrate reaches a higher state, the density is basically kept unchanged, and the hardness and the high temperature resistance of the ceramic substrate are stronger. The shrinkage curve and density curve of alumina during sintering are shown in fig. 1, in which (a) is a curve showing the density as temperature rises and (b) is a curve showing the shrinkage as temperature rises. In certain circumstances, the higher the physical properties of the ceramic substrate, the better, but in the sintering process of the prior art, when the sintering temperature of the ceramic substrate exceeds 950 ℃, the ceramic substrate is easy to warp during shrinkage and crack due to friction, thereby leading to a large amount of ceramic substrates to be scrapped. FIG. 2 is a diagram showing deformation or cracking caused by uneven friction and heating when the lower side of a ceramic substrate is sintered on a flat plate in the prior art, wherein (c) is before sintering and (d) is after sintering; fig. 3 is a diagram illustrating sintering of a ceramic substrate using a tip type support in the prior art, in which sintering is not easy to shrink due to the lower side of the ceramic substrate or causes defective sintering of a part of the ceramic substrate.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides high-temperature sintering equipment for a ceramic substrate and a sintering method thereof.
The purpose of the invention is realized by the following technical scheme:
the high-temperature sintering equipment for the ceramic substrate comprises a box body device, a heating device, a substrate bearing device and a temperature detection device, wherein the heating device for stepwise temperature rise and drop is arranged on the heat-preservation box body device;
the substrate bearing device comprises a plurality of layers of stackable substrate bearing parts, two adjacent layers of the substrate bearing parts are connected through a fixed assembly, each substrate bearing part comprises a frame, a supporting rod, a dividing plate and a transmission assembly, the frame is square, the frame is internally divided into independent limiting frames by the dividing plates which are perpendicular to each other, a plurality of supporting rods used for bearing the ceramic substrate are arranged in the limiting frames, an A surface and a B surface opposite to the A surface are arranged on the ceramic substrate, the B surface of the ceramic substrate is contacted with the supporting rods which rotate in a reciprocating manner, all the supporting rods are arranged in parallel and at equal intervals, one end of each supporting rod is arranged on one side of the frame and perpendicular to the side, and the other end of each supporting rod extends to the outer side of the other side of the frame and is connected with the transmission assembly, the cutting plate is provided with a rotating hole matched with the supporting rod, the transmission assembly is connected with the power assembly, the power assembly is arranged on the outer side of the box body device, and the box body device is provided with a detection assembly used for monitoring the contraction of the ceramic substrate in a high-temperature state.
Further, the transmission assembly comprises a gear, a rack, limiting wheels, a push plate and push rods, wherein the end of each support rod is provided with the gear, the gear is matched with the rack, the rack is arranged between the gear and the limiting wheels capable of freely rotating, the limiting wheels are arranged on the outer wall of the frame, the rack is provided with a clamping groove matched with the push plate, one end of each push rod only capable of transversely reciprocating is fixedly connected with the corresponding push plate, and the other end of each push rod is connected with the power assembly.
Furthermore, the push rod is connected with the middle part of the push plate, and the push plate is not contacted with the frame in the moving process.
Further, the box device includes box and chamber door, the chamber door sets up on the box lateral wall and with the box can seal the cooperation, the box includes shell body, bearing layer, vacuum heat preservation, insulating layer, the box has set gradually from outside to inside shell body, bearing layer, vacuum heat preservation with the insulating layer, and all be provided with push rod complex through-hole, be provided with in the through-hole on the bearing layer with push rod complex sealing member.
Furthermore, a guide groove is formed in the bottom of the heat insulation layer, and a guide block matched with the guide groove is arranged on the frame in contact with the heat insulation layer.
Further, the heating device comprises an electric heating assembly and a microcontroller, the electric heating assembly is arranged on the inner wall of the heat insulation layer, and the electric heating assembly and the power assembly are electrically connected with the microcontroller.
Further, the temperature detection device comprises a thermocouple, and the thermocouple is electrically connected with the microcontroller.
Further, fixed subassembly is fixing bolt, adjacent two pass through two at least on the frame fixing bolt connects, all be provided with on the upper surface of frame and the lower surface with fixing bolt complex mounting hole.
A sintering method of a high-temperature sintering device, comprising the following steps:
s1: placing the ceramic substrate on the support rod in the limiting frame, and enabling the ceramic substrate not to be in contact with the inner wall of the limiting frame;
s2: stacking a plurality of layers of the substrate bearing parts to form the substrate bearing device, placing the substrate bearing device on the heat insulation layer, matching the guide block with the guide groove, and matching all the clamping grooves on the substrate bearing device with the push plate;
s3: closing the box door on the box body;
s4: a first sintering stage: the temperature of the stage is not higher than 950 ℃, the electric heating component is electrified and is heated in a stepped manner from room temperature, and the temperature is increased every timeDegree of M1The dwell time after each temperature increase is t1When the internal and external temperatures of the ceramic substrate are consistent, the heating is continued until the temperature of the ceramic substrate reaches T2；
S5: a second sintering stage: when the temperature of the ceramic substrate reaches T1When the temperature detection device transmits signals individually to the microcontroller, the power assembly is opened under the action of the microcontroller, the power assembly drives the support rod to rotate in a reciprocating manner, the support rod rotates in the process, the ceramic substrate is not in contact with the inner wall of the limiting frame, stepped heating is continued, and the temperature increased each time is M2After the temperature is raised each time, the ceramic substrate needs to be detected by using the detection assembly, the surface A is heated faster than the surface B, so that the shrinkage rate of the surface A is measured to be delta a, the shrinkage rate of the surface B is measured to be delta B, and heating is continued until the internal temperature of the box body reaches T after the shrinkage rates of the surface A and the surface B meet the relation of delta a = beta delta B3And hold T3The ceramic substrate is continuously sintered at the temperature of (2);
s6: when the ceramic substrate is sintered, the interior of the box body is cooled, and the temperature reduced at each time is M3The retention time after each cooling is t2；
S7: and when the temperature in the box body is reduced to 80-100 ℃, directly opening the box door and taking out the substrate bearing device.
Further, in the step S4, in the first sintering stage, the temperature M is increased every time1At the temperature of 80-100 ℃, the time t of stay is needed after the temperature is raised every time1At a temperature T of between 15 and 20min2At 800-950 ℃;
in the step S5, the stepwise heating is continued, each time the temperature M is increased2Beta in a relation delta a = beta delta b is between 0.98 and 1.02 at 50-60 ℃, and the internal temperature T of the box body3At 1620-1650 ℃;
in the step S6, the temperature M is reduced every time3Cooling at 80-100 deg.C each timePost-dwell time t2Within 8-10 min.
The invention has the beneficial effects that:
1) in this sintering equipment, when the inside temperature of box reached 800~850 ℃, the reciprocating rotation that the bracing piece can be slow for ceramic substrate reciprocating motion on the bracing piece makes the contact between ceramic substrate and the bracing piece be line contact like this, compares the face contact, and ceramic substrate contracts more easily, can not ftracture because of the friction. Because the ceramic substrate is in reciprocating motion, any part of the lower surface B of the ceramic substrate can be contacted with the supporting rod, even if the supporting rod absorbs partial temperature, the temperature of the whole ceramic substrate cannot be influenced, so that the temperature difference between the surface A and the surface B of the ceramic substrate can be reduced, the ceramic substrate is uniformly heated as much as possible, the ceramic substrate cannot warp due to nonuniform heating, and the sintering qualification rate of the ceramic substrate is effectively improved.
2) In the sintering equipment, the substrate bearing device comprises a plurality of layers of stackable substrate bearing parts, and each substrate bearing part is provided with a plurality of limiting frames, so that a plurality of ceramic substrates can be sintered simultaneously, and batch sintering is realized.
3) In the sintering equipment, the box body is arranged into a plurality of layers, so that the purposes of heat preservation and heat insulation are achieved, a large amount of energy is prevented from being wasted, and the sintering cost of the ceramic substrate can be effectively saved.
4) In this sintering equipment, set up fixing pin and guide way and make the easy convenient and fast's of base plate carrier fixed, when the rack drives the gear motion, can not lead to the base plate carrier to remove.
5) In this sintering equipment, set up electric heating assembly and make the temperature of box go up and down to be controlled easily, can not lead to ceramic substrate to break because of rising temperature/cooling is too fast.
6) In the sintering equipment, the feedback that the shrinkage rate delta a of the surface A is equal to the shrinkage rate delta B of the surface B is detected, then a feedback signal is transmitted to the microcontroller, and the microcontroller heats the electric heating assembly according to the signal of the microcontroller.
Drawings
FIG. 1 is a graph of shrinkage and density of alumina during sintering;
FIG. 2 is a diagram illustrating a prior art deformation process for sintering a ceramic substrate on a flat plate;
FIG. 3 is a diagram of a prior art sintered ceramic substrate supported in a pinpoint manner;
FIG. 4 is a schematic view of the internal top connection structure of the apparatus;
FIG. 5 is a schematic view of the connection structure of the inside of the apparatus;
FIG. 6 is a schematic side view of a substrate carrier;
FIG. 7 is a schematic view of a structure in which a ceramic substrate is placed on a support rod;
FIG. 8 is a schematic view of a connection structure between the push rod and the case;
in the figure, 1-frame, 2-support rod, 3-partition plate, 4-gear, 5-rack, 6-limiting wheel, 7-push plate, 8-push rod, 9-clamping groove, 10-power component, 11-box door, 12-outer shell, 13-bearing layer, 14-vacuum heat-insulating layer, 15-heat-insulating layer, 16-sealing element, 17-guide groove, 18-guide block, 19-electric heating component, 20-fixing bolt, 21-mounting hole, 22-ceramic substrate, 23-limiting frame, 24-vent groove, 25-A surface and 26-B surface.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 4-8, the present invention provides a technical solution:
a high-temperature sintering device for ceramic substrates comprises a box body device, a heating device, a substrate bearing device and a temperature detection device, wherein the heating device for stepwise temperature rise and fall is arranged on the heat-insulation box body device; the substrate bearing device comprises a plurality of layers of stackable substrate bearing parts, the adjacent two layers of substrate bearing parts are connected through a fixed assembly, each substrate bearing part comprises a frame 1, a support rod 2, a dividing plate 3 and a transmission assembly, the frame 1 is square, the frame 1 is internally divided into independent limiting frames 23 by the dividing plates 3 which are vertical to each other, a plurality of support rods 2 used for bearing a ceramic substrate 22 are arranged in the limiting frames 23, an A surface 25 and a B surface 26 opposite to the A surface 25 are arranged on the ceramic substrate 22, the A surface 25 and the B surface 26 are the surfaces with the largest area on the ceramic substrate 22, the B surface 26 of the ceramic substrate 22 is contacted with the support rods 2 which rotate in a reciprocating manner, the A surface 25 opposite to the B surface 26 is arranged on the ceramic substrate 22, all the support rods 2 are parallel to each other and are arranged at equal intervals, one end of each support rod 2 is arranged on one side of the frame 1, and the support rods 2 are vertical to the side, the other end of the supporting rod 2 extends to the outer side of the other side of the frame 1 and is connected with the transmission assembly, the dividing plate 3 is provided with a rotating hole matched with the supporting rod 2, the transmission assembly is connected with the power assembly 10, the power assembly 10 is arranged on the outer side of the box body device, and the box body device is provided with a detection assembly used for monitoring the contraction of the ceramic substrate 22 in a high-temperature state. Wherein, ceramic substrate 22 is all square basically, so spacing frame 23 also sets up to square, makes frame 1 be square at last, and one side of square frame 1 is provided with the blind hole, and the tip of bracing piece 2 just is put in this blind hole, and the diameter of blind hole and the diameter cooperation of bracing piece 2, the diameter of rotatory hole also cooperates with the diameter of bracing piece 2 for bracing piece 2 can only rotary motion. The two adjacent frames 1 are not in sealing fit, a through ventilation groove 24 is formed in each frame 1, and heat generated by the electric heating assembly 19 can enter the inside of each frame 1 through the through ventilation groove to heat the ceramic substrate 22. The diameter of the support rods 2 is 1.2-1.4 mm, and the distance between every two adjacent support rods 2 is 0.1-0.2 mm. The diameter of the support rods 2 and their spacing can also be designed according to the requirements of the ceramic substrate 22, and can be larger or smaller. The substrate bearing device comprises a plurality of layers of stackable substrate bearing parts, and each substrate bearing part is provided with a plurality of limiting frames, so that a plurality of ceramic substrates can be sintered simultaneously, and batch sintering is realized. The detection means is infrared detection in the prior art, and detects the contracted lengths of the B-side 26 and the a-side 25 on the ceramic substrate 22. The substrate bearing component is made of transparent ceramics by adopting infrared detection. In the process of reciprocating rotation of the support rod 2, the ceramic substrate 22 does not contact with the inside of the limit frame 23, and the ceramic substrate 22 is prevented from colliding against the inside of the limit frame 23 and being damaged.
Preferably, the transmission assembly includes gear 4, rack 5, spacing wheel 6, push pedal 7 and push rod 8, the tip of every bracing piece 2 all is provided with gear 4, gear 4 and rack 5 cooperation, rack 5 sets up between gear 4 and spacing wheel 6 that can the free rotation, spacing wheel 6 sets up on the outer wall of frame 1, be provided with on the rack 5 with push pedal 7 complex chucking groove 9, the push pedal 7 fixed connection of one end and the vertical setting of push rod 8 that can only horizontal reciprocating motion, the other end and the power component 10 of push rod 8 link to each other. The push rod 8 is connected with the middle part of the push plate 7, and the push plate 7 is not contacted with the frame 1 in the moving process. The power assembly 10 has various embodiments, for example, a hydraulic cylinder or a pneumatic cylinder is used, a cylinder body of the power assembly is arranged outside the box body, a piston rod of the power assembly is connected with the end part of the push rod 8, the forward and reverse rotation of the driving motor can be selected to realize the movement of the push rod 8, the driving motor can be used for driving in a mode of combining with a crank link mechanism, and the crank link mechanism is connected with the push rod 8 to realize the reciprocating movement of the push rod 8. The push rod 8 can not rotate, so can set up the spacing groove on the push rod 8, set up spacing arch on the box, spacing groove and spacing protruding cooperation for push pedal 7 is in vertical state all the time. Two adjacent gears 4 arranged at the end parts of the support rods 2 cannot contact with each other, so that the rotation directions of all the support rods 2 at the same moment are consistent, and the ceramic substrate 22 in a high-temperature state is prevented from being damaged due to inconsistent rotation, and the ceramic substrate 22 is prevented from being scrapped. In the equipment, the gear 4, the rack 5, the limiting wheel 6, the push plate 7, the push rod 8, the frame 1, the support rod 2 and the partition plate 3 are made of high-temperature sintered ceramic materials, and the sintered ceramic materials can bear high temperature and cannot deform. The middle of the limiting wheel 6 is provided with a groove, and the width of the rack 5 is matched with the width of the groove. Rack 5 is close to 11 sides of chamber door and sets up, and chucking groove 9 deviates from 11 sides of chamber door and sets up, and the convenient base plate of purpose that sets up like this bears the device's installation, follows chamber door 11 and pushes away the base plate and bears the device to inside, and the chucking groove 9 of its upside will block on push pedal 7, and direct outwards pulling when taking off and pushing away the base plate and bearing the device, and chucking groove 9 breaks away from push pedal 7 automatically, convenient operation like this.
Preferably, the box device includes box and chamber door 11, and chamber door 11 sets up on the box lateral wall and can seal the cooperation with the box, and the box includes shell body 12, bearing layer 13, vacuum heat preservation 14, insulating layer 15, and the box has set gradually shell body 12, bearing layer 13, vacuum heat preservation 14 and insulating layer 15 from outside to inside, and all be provided with push rod 8 complex through-hole, be provided with in the through-hole on the bearing layer 13 with push rod 8 complex sealing member 16. The bottom of insulating layer 15 is provided with guide way 17, is provided with the guide block 18 with guide way 17 complex on the frame 1 that contacts with insulating layer 15. Wherein, through loose-leaf connection between box and the chamber door 11, chamber door 11 and box sealable connection, because it is difficult to reach high temperature to rely on electric heating element 19 alone, therefore still set up sealing member 16, the material of sealing member 16 is prior art. In the heating process, the inside of the box body is also filled with gas which does not react with the ceramic substrate 22 chemically, such as inert gas, and the electric heating assembly 19 can realize high temperature by increasing pressure, so that the electric heating assembly 19 is also arranged and belongs to the prior art. The box device can also adopt the existing equipment capable of heating up in a staged way and cooling down in a staged way, and simultaneously can also meet the requirement of heating to 1650 ℃. The box body is arranged into a plurality of layers, so that the purposes of heat preservation and heat insulation are achieved, a large amount of energy is prevented from being wasted, and the sintering cost of the ceramic substrate can be effectively saved. The guide groove 17 is perpendicular to the closed door 11, the moving direction of the push rod 8 is perpendicular to the direction of the guide groove 17, at least two guide grooves 17 are arranged in the device, and at least two guide blocks 18 are arranged on the substrate bearing part at the lowest side.
Preferably, the heating device comprises an electric heating assembly 19 and a microcontroller, the electric heating assembly 19 is arranged on the inner wall of the heat insulation layer 15, and the electric heating assembly 19 and the power assembly 10 are both electrically connected with the microcontroller. The temperature detection device comprises a thermocouple which is electrically connected with the microcontroller. The provision of the electric heating assembly 19 allows the temperature rise and fall within the cabinet to be easily controlled without causing the ceramic substrate 22 to crack due to rapid temperature rise/fall.
Preferably, the fixing component is a fixing bolt 20, two adjacent frames 1 are connected by at least two fixing bolts 20, and the upper surface and the lower surface of each frame 1 are provided with mounting holes 21 matched with the fixing bolts 20. The arrangement of the fixing latch 20 and the guide groove 17 makes the substrate carrier easy, convenient and fast to fix, and when the rack 5 drives the gear 4 to rotate, the substrate carrier is not moved.
In this sintering equipment, when the inside temperature of box reached 800~850 ℃, the reciprocating rotation that the bracing piece can be slow, make ceramic substrate reciprocating motion on the bracing piece, make the contact between ceramic substrate and the bracing piece be line contact like this, compare the face contact, ceramic substrate contracts more easily, can not ftracture because of the friction, because ceramic substrate is at reciprocating motion's in-process, any position of its lower surface all can contact with the bracing piece, any position all can the thermally equivalent, can not warp because of being heated inhomogeneously, the qualification rate of ceramic substrate sintering has been improved like this effectively.
The sintering method of the high-temperature sintering equipment comprises the following steps:
(1) the ceramic substrate 22 is placed on the support rod 2 in the position restricting frame 23 so that the ceramic substrate 22 does not contact the inner wall of the position restricting frame 23. Generally, the positions of the ceramic substrates 22 in the position limiting frame 23 are the same, and the ceramic substrates 22 do not collide with the inner wall of the position limiting frame 23 during the rotation of the supporting rod 2, so that the ceramic substrates 22 are not damaged.
(2) The multilayer substrate carrier is stacked to form a substrate carrier, the substrate carrier is placed on the heat insulating layer 15 with the guide blocks 18 engaging the guide grooves 17 and with all the chucking grooves 9 on the substrate carrier engaging the push plate 7. This is done in order to fix the substrate carrier inside the housing, preventing the movement of the transmission assembly, which would cause the substrate carrier to move, which would be detrimental to sintering.
(3) The door 11 of the cabinet is closed. Closing the door 11, i.e. sealing the cabinet.
(4) A first sintering stage: the temperature in this stage is not higher than 950 deg.C, the electric heating component 19 is powered on and the electric heating component is enabledThe electric heating assembly 19 is heated stepwise from room temperature, each time at an elevated temperature M1The dwell time after each temperature increase is t1When the internal and external temperatures of the ceramic substrate 22 are uniform, heating is continued until the temperature of the ceramic substrate 22 reaches T2(ii) a In the first sintering phase, the temperature M is increased each time1At the temperature of 80-100 ℃, the time t of stay is needed after the temperature is raised every time1At a temperature T of between 15 and 20min2At 800-950 ℃. In the sintering process at the sintering stage, the shrinkage rate of the ceramic substrate 22 is small, so that the heating span can be a little bit at each time, the temperature can be increased by 80-100 ℃ at each time, the ceramic substrate 22 is not easy to damage, and the ceramic substrate 22 can be uniformly heated.
(5) A second sintering stage: when the temperature of the ceramic substrate 22 reaches T1During the process, the temperature detection device transmits a signal to the microcontroller, the power assembly 10 is opened under the action of the microcontroller, the power assembly 10 drives the support rod 2 to rotate in a reciprocating manner, the support rod 2 does not contact with the inner wall of the limiting frame 23 during the rotation process of the ceramic substrate 22, stepped heating is continued, and the temperature increased each time is M2After the temperature is raised each time, the ceramic substrate 22 needs to be detected by using the detection assembly, since the temperature of the a surface 25 is raised faster than that of the B surface 26, the shrinkage rate of the a surface 25 is measured to be delta a, the shrinkage rate of the B surface 26 is measured to be delta B, and heating is continued until the internal temperature of the box body reaches T, after the shrinkage rates of the a surface 25 and the B surface 26 satisfy the relation delta a = beta delta B3And hold T3The temperature of (2) to continuously sinter the ceramic substrate 22; the heating is continued stepwise, each time the temperature M is raised2Beta in a relation delta a = beta delta b is between 0.98 and 1.02 at 50-60 ℃, and the internal temperature T of the box body3The temperature is 1620-1650 ℃. In the actual sintering process, the temperature rise residence time is determined according to the specific conditions of the ceramic substrate 22, during the temperature rise and fall process, the ceramic substrate 22 is not uniformly raised/lowered, the temperature of the outer surface is always faster than the temperature of the inner surface, and when the inner temperature and the outer temperature are consistent, the next temperature rise/fall process can be performed. Generally, the time of 15-20 min is enough, and the temperature on the ceramic substrate 22 is basically equal in the time, so that the ceramic substrate 22 is not easy to crack, and the ceramic base is not easy to generateWhen the plate 22 is sintered at 1620-1650 ℃, the temperature is reduced after all the ceramic substrates 22 are shrunk. In general, the material for manufacturing the ceramic substrate 22 is uniform powder, and the ceramic substrate 22 is ideally reduced in an equal proportion at the time of sintering. The formula for the shrinkage of the a-side 25 is: (a)1-an）/ a1X 100% = Δ a, and the formula of the shrinkage rate of the B face 26 is: (b)1-bn）/ b1X 100% = Δ b, where a1And b1Denotes the lengths, a, of the A-side 25 and B-side 26, respectivelynAnd bnThe lengths of the A-side 25 and the B-side 26 after the nth temperature rise are shown, respectively, and a is a for one square ceramic substrate 221And b1And after the temperature rise, the delta a and the delta b are also equal, so that the contraction condition of the ceramic substrate 22 can be quickly and intuitively seen, and the measurement is convenient.
The sintering process is divided into two stages, the temperature raising speed of the first sintering stage is 80-100 ℃ higher than that of the second sintering stage by 50-60 ℃, the sintering process aims to improve the sintering efficiency in the first stage, meanwhile, ceramic substrate 22 fracture caused by too fast temperature rise is avoided, the reason that the temperature rise in the second sintering stage is slow is to realize accurate control, the ceramic substrate 22 is shrunk within a control range by raising the temperature every time, and therefore the production of unqualified products is reduced as much as possible in the production process.
(6) After the ceramic substrate 22 is sintered, the interior of the box body is cooled, and the temperature reduced each time is M3The retention time after each cooling is t2(ii) a Each reduced temperature M3At the temperature of between 80 and 100 ℃, the retention time t after each cooling2Within 8-10 min. This time allows the inside and outside temperatures of the entire ceramic substrate 22 to be reduced to the same temperature, preventing the ceramic substrate 22 from cracking during temperature reduction.
(7) When the temperature in the box body is reduced to 80-100 ℃, the door 11 is directly opened, and the substrate bearing device is taken out. The substrate 22 is then removed. Then the next sintering operation can be entered.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A high-temperature sintering equipment of ceramic substrates is characterized in that: the temperature monitoring device comprises a box body device, a heating device, a substrate bearing device and a temperature detection device, wherein the heating device for stepwise temperature rise and drop is arranged on the heat-preservation box body device, the temperature detection device is used for monitoring the temperature in the box body device, the temperature detection device is electrically connected with the heating device, and the substrate bearing device is arranged on the bottom of the box body device;
the substrate bearing device comprises a plurality of layers of stackable substrate bearing parts, two adjacent layers of the substrate bearing parts are connected through a fixing assembly, the substrate bearing parts comprise a frame (1), supporting rods (2), dividing plates (3) and a transmission assembly, the frame (1) is square, the interior of the frame (1) is divided into independent limiting frames (23) by the dividing plates (3) which are perpendicular to each other, a plurality of supporting rods (2) used for bearing the ceramic substrate (22) are arranged in the limiting frames (23), an A surface (25) and a B surface (26) opposite to the A surface (25) are arranged on the ceramic substrate (22), the B surface (26) of the ceramic substrate (22) is contacted with the supporting rods (2) which rotate in a reciprocating mode, all the supporting rods (2) are parallel to each other and are arranged at equal intervals, the one end setting of bracing piece (2) is in on one side of frame (1) and bracing piece (2) and this limit are perpendicular, the other end of bracing piece (2) extend to the outside on frame (1) another side and with transmission assembly links to each other, be provided with on cut-off board (3) with bracing piece (2) complex rotatory hole, transmission assembly links to each other with power component (10), power component (10) set up in the box device outside, be provided with on the box device and be used for monitoring the detection subassembly that ceramic substrate (22) shrink under high temperature state.
2. The apparatus for high-temperature sintering of ceramic substrates according to claim 1, wherein: the transmission assembly comprises a gear (4), a rack (5), a limiting wheel (6), a push plate (7) and a push rod (8), each end of the support rod (2) is provided with the gear (4), the gear (4) is matched with the rack (5), the rack (5) is arranged between the gear (4) and the limiting wheel (6) and can rotate freely, the limiting wheel (6) is arranged on the outer wall of the frame (1), the rack (5) is provided with a clamping groove (9) matched with the push plate (7), one end of the push rod (8) can only move transversely and reciprocally and the vertical end of the push plate (7) is fixedly connected with the push plate (7), and the other end of the push rod (8) is connected with the power assembly (10).
3. The apparatus for high-temperature sintering of ceramic substrates according to claim 2, wherein: the push rod (8) is connected with the middle part of the push plate (7), and the push plate (7) is not contacted with the frame (1) in the moving process.
4. The high-temperature sintering apparatus for ceramic substrates according to claim 2 or 3, wherein: the box device comprises a box body and a box door (11), wherein the box door (11) is arranged on the side wall of the box body and is matched with the box body in a sealing mode, the box body comprises an outer shell (12), a bearing layer (13), a vacuum heat-insulating layer (14) and a heat-insulating layer (15), the box body is sequentially provided with the outer shell (12), the bearing layer (13), the vacuum heat-insulating layer (14) and the heat-insulating layer (15) from outside to inside, and is provided with a through hole matched with the push rod (8), and a sealing piece (16) matched with the push rod (8) is arranged in the through hole in the bearing layer (13).
5. The apparatus for high-temperature sintering of ceramic substrates according to claim 4, wherein: the bottom of the heat insulation layer (15) is provided with a guide groove (17), and a guide block (18) matched with the guide groove (17) is arranged on the frame (1) contacted with the heat insulation layer (15).
6. The apparatus for high-temperature sintering of ceramic substrates according to claim 4, wherein: the heating device comprises an electric heating assembly (19) and a microcontroller, wherein the electric heating assembly (19) is arranged on the inner wall of the heat insulation layer (15), and the electric heating assembly (19) and the power assembly (10) are electrically connected with the microcontroller.
7. The apparatus for high-temperature sintering of ceramic substrates according to claim 6, wherein: the temperature detection device comprises a thermocouple, and the thermocouple is electrically connected with the microcontroller.
8. The apparatus for high-temperature sintering of ceramic substrates according to claim 1, wherein: the fixing assembly is a fixing bolt (20), the adjacent two fixing bolts (20) are arranged on the frame (1) at least in two modes, and mounting holes (21) matched with the fixing bolts (20) are formed in the upper surface and the lower surface of the frame (1).
9. The sintering method of a high-temperature sintering apparatus according to any one of claims 1 to 8, characterized in that: the sintering method comprises the following steps:
s1: placing the ceramic substrate (22) on the support rod (2) in the limiting frame (23) and enabling the ceramic substrate (22) not to be in contact with the inner wall of the limiting frame (23);
s2: stacking a plurality of layers of the substrate bearing parts to form the substrate bearing device, placing the substrate bearing device on the heat insulation layer (15) and enabling the guide block (18) to be matched with the guide groove (17), and enabling all the clamping grooves (9) on the substrate bearing device to be matched with the push plate (7);
s3: closing the door (11) on the box;
s4: a first sintering stage: the temperature of the stage is not higher than 950 ℃, the electric heating component (19) is electrified, and the electric heating component (19) is heated in a stepped manner from room temperature, wherein the temperature is increased by M each time1The dwell time after each temperature increase is t1When the internal and external temperatures of the ceramic substrate (22) are the same, the heating is continued until the temperature of the ceramic substrate (22) reaches T2；
S5: a second sintering stage: when the temperature of the ceramic substrate (22) reaches T1When, temperature-detecting device is individual with signal transmission microcontroller opening under microcontroller's the effect power component (10), power component (10) drive bracing piece (2) reciprocating rotation, bracing piece (2) rotate the in-process, ceramic substrate (22) not with the inner wall contact of spacing frame (23), continue to carry out cascaded heating, the temperature that improves every time is M2After the temperature is raised each time, the ceramic substrate (22) needs to be detected by using the detection assembly, the temperature of the surface A (25) is raised faster than that of the surface B (26), so that the shrinkage rate of the surface A (25) is measured to be delta a, the shrinkage rate of the surface B (26) is measured to be delta B, and heating is continued until the internal temperature of the box body reaches T after the shrinkage rates of the surface A (25) and the surface B (26) meet the relation delta a = beta delta B3And hold T3The ceramic substrate (22) is continuously sintered at the temperature of (1);
s6: when the ceramic substrate (22) is sintered, the interior of the box body is cooled, and the temperature reduced each time is M3The retention time after each cooling is t2；
S7: and when the temperature in the box body is reduced to 80-100 ℃, the box door (11) is directly opened, and the substrate bearing device is taken out.
10. The sintering method of a high-temperature sintering apparatus according to claim 9, wherein: in the step S4, in the first sintering stage, the temperature M is increased every time1At the temperature of 80-100 ℃, the time t of stay is needed after the temperature is raised every time1At a temperature T of between 15 and 20min2At 800-950 ℃;
in the step S5, the stepwise heating is continued, each time the temperature M is increased2Beta in a relation delta a = beta delta b is between 0.98 and 1.02 at 50-60 ℃, and the internal temperature T of the box body3At 1620-1650 ℃;
in the step S6, the temperature M is reduced every time3At the temperature of between 80 and 100 ℃, the retention time t after each cooling2Within 8-10 min.
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| CN101378623A (en) * | 2007-08-28 | 2009-03-04 | 台达电子工业股份有限公司 | Multilayer ceramic substrate with inner-imbedded foveae and manufacture method |
| CN107266083A (en) * | 2017-06-07 | 2017-10-20 | 中国电子科技集团公司第四十八研究所 | Zero shrinks the preparation method of LTCC multilayer ceramic substrates |
| CN209263675U (en) * | 2018-11-30 | 2019-08-16 | 宜兴中村窑业有限公司 | A kind of high heat transfer refractory plate |
| CN111426431A (en) * | 2020-05-19 | 2020-07-17 | 盐城工业职业技术学院 | Multilayer ceramic substrate gas tightness detection device |
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| CN101378623A (en) * | 2007-08-28 | 2009-03-04 | 台达电子工业股份有限公司 | Multilayer ceramic substrate with inner-imbedded foveae and manufacture method |
| CN107266083A (en) * | 2017-06-07 | 2017-10-20 | 中国电子科技集团公司第四十八研究所 | Zero shrinks the preparation method of LTCC multilayer ceramic substrates |
| CN209263675U (en) * | 2018-11-30 | 2019-08-16 | 宜兴中村窑业有限公司 | A kind of high heat transfer refractory plate |
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