CN113228302A - Glass powder composition, conductive paste and solar cell - Google Patents
Glass powder composition, conductive paste and solar cell Download PDFInfo
- Publication number
- CN113228302A CN113228302A CN201980086037.1A CN201980086037A CN113228302A CN 113228302 A CN113228302 A CN 113228302A CN 201980086037 A CN201980086037 A CN 201980086037A CN 113228302 A CN113228302 A CN 113228302A
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- CN
- China
- Prior art keywords
- glass frit
- frit composition
- powder
- weight
- glass
- Prior art date
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- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 239000011521 glass Substances 0.000 title claims abstract description 87
- 239000000843 powder Substances 0.000 title claims abstract description 44
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 239000011733 molybdenum Substances 0.000 claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 27
- 239000012074 organic phase Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 239000013008 thixotropic agent Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000012634 fragment Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 23
- 238000005245 sintering Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 229910021418 black silicon Inorganic materials 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- -1 polyol ester Chemical class 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007581 slurry coating method Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
A glass powder composition, a conductive paste and a solar cell are provided, wherein the glass powder composition contains tungsten and molybdenum in a molar ratio of 1:3-3: 1; the total weight of tungsten and molybdenum is 5% -25% calculated by oxide. A conductive paste containing the glass frit composition and a solar cell including a member formed of the conductive paste are provided.
Description
The invention relates to a composition, in particular to a glass powder composition of a solar cell, and belongs to the technical field of solar cells.
Solar cells are devices that convert light energy into electrical energy using the photovoltaic effect of semiconductor PN junctions. The crystalline silicon solar cell is formed by doping phosphorus and boron on a single crystal or polycrystalline silicon wafer to form a PN junction, for example, the P-type crystalline silicon cell is formed by injecting phosphorus into one side of the silicon wafer doped with boron, and the phosphorus diffuses into the silicon wafer to form a junction of an N-type semiconductor and the P-type semiconductor to form the PN junction. The N-type crystalline silicon cell is opposite to the P-type crystalline silicon cell, and boron is diffused into one side of a silicon wafer doped with phosphorus to form a PN junction.
In order to improve the light utilization rate and reduce the reflection of the silicon wafer, suede treatment needs to be carried out on the first measurement (light measurement) of the silicon wafer, for example, the surface of a single crystal silicon is corroded by alkali, the 111 crystal faces are exposed, millions of tetrahedral pyramids, namely inverted pyramid structures, are formed on the surface of each square centimeter of the silicon, the spacing of holes of the pyramids is 1-5 mu m generally, and the conversion efficiency of the cell is higher when the spacing of the holes is smaller. Etching the surface of the polycrystalline silicon by acid to form a concave-convex rough surface; the black silicon solar cell is formed by a layer of uniformly distributed nano-pore structure on the surface of a silicon substrate through metal particle assisted chemical etching, the reflectivity of the light trapping nano textured structure in an infrared band is extremely low and can reach below 5%, and the conversion efficiency of the solar cell is effectively improved. For those skilled in the art, it is generally considered that the textured pore size below 1 μm is a small size pore.
In order to further improve the light utilization rate, an anti-reflection layer is coated on the surface of the suede, and the surface of the suede is generally made of dielectric materials with good insulation property, such as SiNx and TiO2、Al 2O 3、SiO 2One or more of (a).
And manufacturing a positive electrode and a negative electrode on the battery, and leading out carriers generated by the PN junction to form current. The electrode manufacturing method is many, and generally, a front electrode silver paste is printed on a light receiving surface and an aluminum back field and a back silver electrode are printed on a backlight surface through a screen printing process. And placing the slurry on a printing screen, extruding the slurry by a rubber scraper bar on a scraper of a printing machine, printing the slurry on the surface of the battery through an opening of a screen pattern, drying, quickly sintering, and metallizing to form an electrode. The front electrode silver paste used on the light receiving surface can shield light rays when used on the light receiving surface, so the front electrode silver paste is printed into a fine line shape, and in addition, an anti-reflection layer (a passivation layer) of the light receiving surface needs to be burnt through to form good ohmic contact with a silicon-based suede, so the photoelectric conversion efficiency of the solar cell is improved.
The front electrode silver paste of the solar cell generally mainly comprises silver powder, a glass powder composition and an organic carrier. The silver powder is used as a conductive phase, the glass powder composition is mainly sintered by the silver powder and forms good ohmic contact and adhesion with silicon base, and the organic carrier is used for uniformly and stably dispersing the silver powder and the glass powder in the silver powder composition so that the positive silver paste has good fine line printing capability.
In the front electrode silver paste sintering process, the glass powder is fused and has good wettability with the silicon substrate and the silver powder, and particularly forms ohmic contact and adhesiveness with the silicon substrate. However, as the size of the textured hole is smaller and smaller, the textured hole enters the nanometer level, the glass composition is difficult to permeate after being melted, the problems of poor contact with a silicon substrate, low welding tension and the like are caused, and in order to better permeate into the textured structure on the surface of the battery, the melted glass liquid is required to have low surface tension, low high-temperature viscosity and good flowability, but the cell conversion efficiency cannot be influenced because the electricity is not fine enough due to too wide band spreading.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a glass frit composition having a low surface tension, and a solar cell prepared therefrom has a high bonding force and a high photoelectric conversion efficiency.
In order to achieve the above technical object, the present invention first provides a glass frit composition comprising tungsten and molybdenum in a molar ratio of 1:3 to 3: 1; wherein, the total weight of tungsten and molybdenum is 5-25% calculated by oxide, and the total weight of the glass powder composition is 100%.
The glass powder composition contains metal tungsten and molybdenum at the same time, and by limiting the specific molar ratio and the percentage content of the metal tungsten and the metal molybdenum, the glass powder composition has lower melting surface tension, reduces the capillary effect of small-size holes, can form good wettability with a suede, is more fully contacted with silicon-based on the bottoms of the holes, has low expansion coefficient, can keep the fine line type of an electrode grid line, and improves the ohmic contact and the adhesiveness between an electrode and the silicon-based, thereby improving the photoelectric conversion efficiency of a solar cell.
In one embodiment of the present invention, the glass frit composition further comprises any one or a combination of two or more of lithium, tellurium, lead and bismuth.
Among them, lithium oxide can play a sintering-assisting role. Tellurium oxide may be used to lower the melting temperature of the glass frit composition and facilitate contact with the silicon substrate. The lead oxide is used as a fluxing agent, so that the melting temperature of the glass powder composition is reduced, the contact with silicon base is promoted, and the compactness of the glass powder composition is increased. Bismuth oxide can lower the softening point of the glass frit composition and increase chemical activity.
In one embodiment of the present invention, the glass frit composition may contain both lithium and tellurium.
Specifically, the content of lithium is 5-30% by weight calculated by oxide, and the total content of the glass powder composition is 100%.
Specifically, the tellurium content is 70% by weight or less (preferably 15% to 70% by weight of tellurium), and the total content of the glass frit composition is 100% by weight, calculated as an oxide.
In one embodiment of the present invention, the glass frit composition may contain lithium, tellurium and bismuth at the same time.
Specifically, the weight content of bismuth is less than 30% (preferably, the weight content of bismuth is 2% -30%) calculated by oxide, and the total amount of the glass powder composition is 100%.
In one embodiment of the present invention, the glass frit composition may contain lithium, tellurium and lead at the same time.
Specifically, the content of lead by weight is 50% or less (preferably 1% to 30% by weight) in terms of oxide, and the total amount of the glass frit composition is 100%.
In one embodiment of the present invention, the molar ratio of tungsten to molybdenum in the glass frit composition can be from 1: 2 to 2: 1, for example, 1: 1, 0.3: 1, 0.5: 1, and the like.
In one embodiment of the present invention, the glass frit composition further comprises one or a combination of two or more of sodium, potassium, beryllium, magnesium, calcium, strontium, barium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, zirconium, niobium, silver, tantalum, boron, aluminum, gallium, indium, silicon, germanium, tin, phosphorus, antimony, selenium, rhenium, cerium, and rubidium.
Specifically, the cation may be one or a combination of two or more of sodium, potassium, beryllium, magnesium, calcium, strontium, barium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, zirconium, niobium, silver, tantalum, boron, aluminum, gallium, indium, silicon, germanium, tin, phosphorus, antimony, selenium, rhenium, cerium, rubidium, or a compound thereof.
Wherein, sodium, potassium, beryllium, magnesium, calcium, strontium, barium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, zirconium, niobium, silver, tantalum, boron, aluminum, gallium, indium, silicon, germanium, tin, phosphorus, antimony, selenium, rhenium, cerium and rubidium are added into the glass powder composition as auxiliary agents, and the dosage is generally more than 0 and less than or equal to 5 percent in terms of oxide.
The glass frit composition of the present invention may be one or a combination of two or more of an amorphous glass frit composition, a crystallized glass frit composition, a partially crystallized glass frit composition, and a partially amorphous glass frit composition.
The invention also provides a preparation method of the glass powder composition, which comprises the following steps:
mixing the raw materials of the glass powder composition, and heating and melting at 700-1000 ℃ for 30-120 min;
and then cooling to obtain glass powder composition fragments, and grinding to obtain the glass powder composition with the required particle size distribution.
In the method for producing the glass frit composition of the present invention, oxides of the corresponding metals or compounds that can be classified into the corresponding metal oxides by heating are selectively added to the raw material composition of the glass frit composition according to the composition of the glass frit composition.
For example, the raw material composition of the glass frit composition is tungsten oxide or molybdenum oxide. The glass powder composition also contains one or the combination of more than two of oxides of lithium, tellurium, bismuth and lead or compounds which can decompose the corresponding oxides by heating.
In one embodiment of the present invention, the heating and melting may be performed in an electric resistance furnace.
The preparation method of the glass powder composition has no special requirement on cooling operation, and can be used for cooling through water quenching and a steel plate or stainless steel double-roll machine.
In the method for producing the glass frit composition of the present invention, the purpose of milling is to obtain a desired particle size, and for example, milling by a planetary ball mill is performed to obtain a glass frit composition having a desired particle size distribution.
The invention also provides a conductive paste, which contains (70-93) parts by weight of metal powder, (0.5-15) parts by weight of the glass powder composition, and (5-30) parts by weight of organic phase.
In a specific embodiment of the present invention, the metal powder used may include one or an alloy of two or more of silver powder, gold powder, platinum powder, tin powder, nickel powder, and aluminum powder; preferably, the metal powder may be silver powder and/or platinum powder; more preferably, the metal powder used is silver powder.
In the conductive paste of the present invention, the shape of the metal powder particles may be one or a combination of two or more of spherical, plate-shaped, elongated, and irregular shapes.
In one embodiment of the present invention, the organic phase employed comprises one or more of a solvent, a resin, a thixotropic agent, a plasticizer, and other adjuvants. The purpose of adding the organic phase is to make the conductive paste have good rheological characteristics, suitable for screen printing and capable of forming fine lines.
Specifically, the solvent may be terpineol, butyl carbitol acetate, or decaglycol ester. The solvent content may be 60% to 90% based on the total weight of the organic phase as 100%.
Specifically, the resin may be one or a combination of two or more of cellulose, epoxy resin, acrylic resin, and polyester resin. The resin content may be 1% to 20% based on the total weight of the organic phase taken as 100%.
Specifically, the thixotropic agent may be hydrogenated castor oil, polyamide wax, fumed silica, or the like. The content of the thixotropic agent is 1 to 10 percent based on the total weight of the organic phase as 100 percent.
Specifically, the shaping agent may be aliphatic dibasic acid ester, phthalate, terephthalate, benzene polyacid ester, benzoate, polyol ester epoxy, citrate, polyester, or the like. The content of the shaping agent may be greater than 0 and equal to or less than 5%, based on 100% by weight of the total organic phase.
Specifically, the other auxiliary may be a surfactant, a humectant, or the like. The content of other auxiliary agents can be more than 0 and less than or equal to 10 percent, based on the total weight of the organic phase as 100 percent.
By adopting the glass powder composition, the conductive paste forms good ohmic contact with a small-size textured battery after being sintered, forms a fine electrode, and improves the conversion efficiency and welding tension of a solar battery.
The invention also provides a preparation method of the conductive paste, which comprises the following steps:
preparation of an organic phase: uniformly mixing the resin and the organic solvent, and uniformly stirring at room temperature or under heating;
preparing slurry: and mixing the metal powder, the glass powder composition and the organic phase, grinding and dispersing to obtain the conductive silver paste, wherein the average scraper fineness is less than 10 micrometers (preferably less than 5 micrometers).
Finally, the invention provides a solar cell comprising a component made of the conductive paste according to the invention. The solar cell of the present invention includes, but is not limited to, a crystalline silicon solar cell.
The solar cell is prepared by the following steps:
the semiconductor substrate is a boron-doped P-type silicon substrate or a 4-phosphorus N-type silicon substrate, wherein the silicon substrate is a silicon wafer with the thickness of 180-250 mu m and the thickness of 125-125 mm or 156-156 mm or other typical dimensions;
firstly, corroding one side of a silicon substrate by using corrosive solution to prepare a pyramid (single crystal) or rugged (polycrystalline) antireflection suede, or preparing a black silicon nanometer suede by using a wet method or a dry method black silicon technology;
forming an N (P) type diffusion layer on the other side of the P (N) type silicon substrate to prepare a PN junction, wherein the N type diffusion layer can be prepared by a gas phase thermal diffusion method using gaseous phosphorus oxychloride as a diffusion source, a phosphorus ion injection method, a slurry coating thermal diffusion method containing phosphorus pentoxide and the like;
thirdly, depositing a SiNx antireflection layer on one side of the suede surface of the silicon substrate, or adding an aluminum oxide passivation layer, or other similar coatings with good antireflection effects; a passivation layer can also be formed on the back surface of the cell by using SiNx and alumina or silicon oxide as a back reflector to increase the absorption of long wave light.
Fourthly, printing or coating an Al electrode layer and a main grid silver electrode layer on one side of the P or N type silicon substrate,
fifthly, forming a vertical and horizontal main grid and a fine grid on the antireflection film on one side of the light receiving silicon substrate by screen printing, coating or ink-jet printing and the like, and co-firing the conductive paste to form an electrode body under a certain sintering temperature program, wherein the sintering peak temperature is 600-950 ℃ to obtain the solar cell.
The solar cell provided by the invention has higher welding tension and photoelectric conversion efficiency by adopting the conductive paste formed by the specific glass powder composition as the paste.
Fig. 1 is an image of the conductive paste of example 20 after printing and sintering.
Fig. 2 is an image after printing and sintering of the conductive paste of comparative example 1.
The technical solutions of the present invention will be described in detail below in order to clearly understand the technical features, objects, and advantages of the present invention, but the present invention is not limited to the practical scope of the present invention.
Examples
This example provides a glass frit composition having a specific composition as shown in table 1.
This example also provides an electroconductive paste comprising (70-93) parts by weight of a silver powder, (0.5-15) parts by weight of a glass frit composition shown in Table 1, and (5-30) parts by weight of an organic phase;
wherein the organic phase comprises (60-90) parts by weight of butyl carbitol acetate, (1-5) parts by weight of ethyl cellulose, (1-5) parts by weight of epoxy resin, (0.5-3) parts by weight of polyamide wax, (1-3) parts by weight of phthalate ester and (0.5-3) parts by weight of methyl silicone oil, based on 100 parts by weight of the total mass of the organic phase.
The solar cell of the present example was prepared by the following steps:
the semiconductor substrate is a boron-doped P-type silicon substrate or a 4-phosphorus N-type silicon substrate, wherein the silicon substrate is a silicon wafer with the thickness of 180-250 mu m and the thickness of 125-125 mm or 156-156 mm or other typical dimensions;
firstly, corroding one side of a silicon substrate by using corrosive solution to prepare a pyramid (single crystal) or rugged (polycrystalline) antireflection suede, or preparing a black silicon nanometer suede by using a wet method or a dry method black silicon technology;
forming an N (P) type diffusion layer on the other side of the P (N) type silicon substrate to prepare a PN junction, wherein the N type diffusion layer can be prepared by a gas phase thermal diffusion method using gaseous phosphorus oxychloride as a diffusion source, a phosphorus ion injection method, a slurry coating thermal diffusion method containing phosphorus pentoxide and the like;
thirdly, depositing a SiNx antireflection layer on one side of the suede surface of the silicon substrate, or adding an aluminum oxide passivation layer, or other similar coatings with good antireflection effects; a passivation layer can also be formed on the back surface of the cell by using SiNx and alumina or silicon oxide as a back reflector to increase the absorption of long wave light.
Fourthly, printing or coating an Al electrode layer and a main grid silver electrode layer on one side of the P or N type silicon substrate,
fifthly, forming a vertical and horizontal main grid and a fine grid on the antireflection film on one side of the light receiving silicon substrate by the conductive paste in the embodiment through screen printing, coating or ink-jet printing and the like, and co-firing the conductive paste to form an electrode body under a certain sintering temperature program, wherein the sintering peak temperature is 600-950 ℃, so as to obtain the solar cell.
The solar cell of the embodiment is subjected to an electrical performance test, which specifically comprises the following steps:
the solar energy is used for simulating the electric efficiency tester and is tested under the standard condition (the atmospheric quality AM1.5, the illumination intensity 1000W/m)2Test temperature 25 ℃ C.), the results are shown in Table 1.
The method for testing the welding tension of the solar cell in the embodiment specifically comprises the following steps:
selecting a welding rod with the diameter of 1.2 multiplied by 0.25mm, setting the temperature of an electric iron to be 350 ℃, testing at a constant speed of 180 ℃ by using a tension tester, and taking the average value as the tension value of the test. 5 cells were tested per formulation and then averaged. The results are shown in Table 1.
For comparison, conductive pastes were prepared using the glass frit compositions of comparative example 1 and comparative example 2 in table 1, and the metal powder and organic phase of the conductive pastes were the same as those of the present example. And preparing the corresponding solar cell according to the method.
The width of the conductive paste formed in example 20 after printing and sintering in FIG. 1 was 35 μm, and the width of the conductive paste formed in comparative example 1 in FIG. 2 after printing and sintering was 45 μm. Therefore, the conductive paste of the invention has fine line shape and no edge overflow after sintering, which indicates that the glass composition does not obviously flow and diffuse on the suede surface of the small-size hole after melting.
As can be seen from table 1, the conductive paste formed by the glass frit composition of the present invention is used as a paste to prepare a solar cell having high bonding force and photoelectric conversion efficiency.
Claims (17)
- A glass frit composition, wherein the glass frit composition comprises tungsten and molybdenum in a molar ratio of 1:3 to 3: 1; wherein, the total weight of tungsten and molybdenum is 5-25% calculated by oxide, and the total weight of the glass powder composition is 100%.
- The glass frit composition according to claim 1, wherein the glass frit composition further comprises any one or a combination of two or more of lithium, tellurium, lead and bismuth.
- The glass frit composition according to claim 1, wherein the glass frit composition comprises lithium and/or tellurium.
- The glass frit composition according to claim 3, wherein the amount of lithium is 5 to 30% by weight calculated as oxide, and the total amount of the glass frit composition is 100%.
- The glass frit composition according to claim 3 or 4, wherein tellurium is present in an amount of 70% by weight or less in terms of oxide, and the total amount of the glass frit composition is 100%;preferably, the tellurium content is between 15% and 70% by weight.
- The glass frit composition according to claim 1 or 2, wherein the glass frit composition comprises lithium, tellurium and bismuth.
- The glass frit composition according to claim 6, wherein the bismuth is contained in an amount of 30% by weight or less in terms of oxide, and the total amount of the glass frit composition is 100%;preferably, the bismuth content is between 2% and 30% by weight.
- The glass frit composition according to claim 1 or 2, wherein the glass frit composition comprises lithium, tellurium and lead.
- The glass frit composition according to claim 8, wherein the lead is present in an amount of 50% or less by weight, calculated as oxide, and the total amount of the glass frit composition is 100%;preferably, the lead content is 1% to 30% by weight.
- The glass frit composition according to claim 1, wherein the molar ratio of tungsten to molybdenum in the glass frit composition is 1: 2 to 2: 1.
- The glass frit composition according to claim 1 or 2, wherein the glass frit composition further comprises one or a combination of two or more of sodium, potassium, beryllium, magnesium, calcium, strontium, barium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, zirconium, niobium, silver, tantalum, boron, aluminum, gallium, indium, silicon, germanium, tin, phosphorus, antimony, selenium, rhenium, cerium, and rubidium.
- A method of making a glass frit composition according to any of claims 1 to 11, comprising the steps of:mixing the raw materials of the glass powder composition, and heating and melting at 700-1000 ℃ for 30-120 min;and then cooling to obtain glass powder composition fragments, and grinding to obtain the glass powder composition with the required particle size distribution.
- An electroconductive paste comprising (70 to 93) parts by weight of a metal powder, (0.5 to 15) parts by weight of the glass frit composition according to any one of claims 1 to 11, and (5 to 30) parts by weight of an organic phase.
- The conductive paste according to claim 13, wherein the metal powder comprises an alloy of one or more of silver powder, gold powder, platinum powder, tin powder, nickel powder, and aluminum powder;preferably, the metal powder includes silver powder, platinum powder;more preferably, the metal powder includes silver powder.
- The conductive paste of claim 13, wherein the organic phase comprises one or more of a solvent, a resin, a thixotropic agent, a leveling agent, a shaping agent, and other additives.
- The method for preparing conductive paste according to any one of claims 13 to 15, comprising the steps of:preparation of an organic phase: uniformly mixing the resin and the organic solvent, and uniformly stirring at room temperature or under heating;preparing slurry: and mixing the metal powder, the glass powder composition and the organic phase, grinding and dispersing to obtain the conductive slurry, wherein the average scraper fineness is less than 10 mu m.
- A solar cell comprising a member made of the electroconductive paste according to any one of claims 13 to 15.
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| CN107746184A (en) * | 2017-10-20 | 2018-03-02 | 苏州晶银新材料股份有限公司 | A kind of glass frit composition and the conductive silver paste and preparation method containing it |
| CN108665994A (en) * | 2017-03-27 | 2018-10-16 | 苏州晶银新材料股份有限公司 | Silver electrode paste |
| CN109427429A (en) * | 2017-09-01 | 2019-03-05 | 苏州晶银新材料股份有限公司 | It is suitble to the electrocondution slurry of high speed printing |
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| DE102014014322B4 (en) * | 2014-10-01 | 2017-11-23 | Ferro Gmbh | Tellurate-Fügeglas with processing temperatures ≦ 400 ° C. |
| CN108666008A (en) * | 2017-03-27 | 2018-10-16 | 苏州晶银新材料股份有限公司 | Electrocondution slurry for solar cell |
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| CN108665994A (en) * | 2017-03-27 | 2018-10-16 | 苏州晶银新材料股份有限公司 | Silver electrode paste |
| CN109427429A (en) * | 2017-09-01 | 2019-03-05 | 苏州晶银新材料股份有限公司 | It is suitble to the electrocondution slurry of high speed printing |
| CN107746184A (en) * | 2017-10-20 | 2018-03-02 | 苏州晶银新材料股份有限公司 | A kind of glass frit composition and the conductive silver paste and preparation method containing it |
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