CN113227303A - Method for evaluating photocurable pressure-sensitive adhesive, dicing die-bonding integrated film and method for producing same, and method for producing semiconductor device - Google Patents

Method for evaluating photocurable pressure-sensitive adhesive, dicing die-bonding integrated film and method for producing same, and method for producing semiconductor device Download PDF

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Publication number
CN113227303A
CN113227303A CN201980085272.7A CN201980085272A CN113227303A CN 113227303 A CN113227303 A CN 113227303A CN 201980085272 A CN201980085272 A CN 201980085272A CN 113227303 A CN113227303 A CN 113227303A
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sensitive adhesive
photocurable pressure
adhesive layer
pressure
photocurable
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CN201980085272.7A
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CN113227303B (en
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山中大辅
彼谷美千子
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Lishennoco Co ltd
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Showa Denko KK
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00—Investigating materials by mechanical methods
    • G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/181—Encapsulation

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Abstract

The invention discloses an evaluation method of a photo-curing pressure-sensitive adhesive used in a cutting die bonding integrated film. The evaluation method comprises the following steps: preparing a photocurable pressure-sensitive adhesive sheet formed of a photocurable pressure-sensitive adhesive, performing a tensile test, preparing a graph of a test force versus displacement, and obtaining an area surrounded by a hysteresis loop from the hysteresis loop as a loss work; preparing a dicing die-bonding integral film including a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive, irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays to form a cured product of the photocurable pressure-sensitive adhesive layer, and measuring a peeling force when peeling the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer; and a step of judging whether the photocurable pressure-sensitive adhesive is good or not according to the loss work and the peeling force.

Description

Method for evaluating photocurable pressure-sensitive adhesive, dicing die-bonding integrated film and method for producing same, and method for producing semiconductor device
Technical Field
The present invention relates to a method for evaluating a photocurable pressure-sensitive adhesive, a dicing/die-bonding (dicing/die-bonding) integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device.
Background
In the manufacture of semiconductor chips, it is common to include: a dicing step of singulating the semiconductor wafer into individual semiconductor chips; and a die bonding step of bonding the singulated semiconductor chip to a lead frame, a package substrate, or the like. In the manufacture of such semiconductor chips, a dicing die-bonding integral film is mainly used, which is obtained by combining a dicing film having a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive (pressure-sensitive a fresh) for fixing a semiconductor wafer in a dicing process with a die-bonding film having an adhesive (adhesive) layer for bonding a semiconductor chip with a lead frame, a package substrate, or the like.
In recent years, as an example of a method for manufacturing semiconductor chips by singulating a thin semiconductor wafer, a method has been proposed in which a groove to be a broken line is processed without completely cutting the semiconductor wafer; and a method of forming a modified layer by irradiating laser light into the semiconductor wafer on a predetermined cutting line without completely cutting the semiconductor wafer. The former is called half-cut cleavage (half-cut cleavage), and the latter is called stealth cleavage (for example, patent documents 1 and 2). In these methods, when a thin semiconductor wafer is used, there is a possibility that a chip in which the photocurable pressure-sensitive adhesive layer and a part of the adhesive layer are peeled off may float due to the influence of warpage of the semiconductor wafer. If the chip is lifted, the adhesion of the peeled portion is less likely to be reduced by the inhibition of oxygen in the subsequent ultraviolet irradiation step, and the pickup property in the pickup step may be affected. In order to suppress chip lifting, it is necessary to increase the adhesive strength of the photocurable pressure-sensitive adhesive layer, but if the adhesive strength is excessively increased, the peel strength after ultraviolet irradiation increases, and there is a possibility that the pickup property is affected. Therefore, when the dicing die-bonding integral film is used in the production of a thin semiconductor chip, a dicing die-bonding integral film capable of suppressing chip floating and improving the pickup property is required, and selection of the photocurable pressure-sensitive adhesive constituting the photocurable pressure-sensitive adhesive layer of the dicing die-bonding integral film becomes important.
Prior art documents
Patent document
Patent document 1: japanese laid-open patent publication No. 2002-192370
Patent document 2: japanese patent laid-open publication No. 2003-338467
Disclosure of Invention
Technical problem to be solved by the invention
However, in the manufacture of semiconductor chips, it is difficult to predict in advance whether or not a photocurable pressure-sensitive adhesive intended for use as a photocurable pressure-sensitive adhesive layer for dicing a die-bonding integral film can suppress chip floating and improve pickup properties, and if it is not actually used, it is often not known.
The present invention has been made in view of such circumstances, and a main object thereof is to provide a method for evaluating a novel photocurable pressure-sensitive adhesive used for dicing a die-bonding integral film.
Means for solving the technical problem
Factors affecting the adhesiveness between the adherend and the pressure-sensitive adhesive include the adhesive strength of the pressure-sensitive adhesive (bulk property of the pressure-sensitive adhesive), the interaction at the interface between the adherend and the pressure-sensitive adhesive (surface property of the pressure-sensitive adhesive), and the like. It is generally known that bulk properties contribute more to the tackiness than surface properties, and by adjusting bulk properties, tackiness tends to be controlled. However, the influence of the surface characteristics is not negligible even in the chip lifting of the thin semiconductor chip, and for example, when the pressure-sensitive adhesive is peeled from the adherend, it is considered that a stringing phenomenon in which the pressure-sensitive adhesive is stretched like a string without breaking is also greatly influenced. The present inventors speculate that the mechanism of peeling the pressure-sensitive adhesive from the laminate composed of the adherend and the pressure-sensitive adhesive is as follows. First, when the pressure-sensitive adhesive is stretched from the laminate composed of the adherend and the pressure-sensitive adhesive, stringing occurs from the pressure-sensitive adhesive, and when the pressure-sensitive adhesive deforms and reaches a stress necessary for peeling, the stringing peels off from the adherend interface. Then, the peeled strands shrink, and the shrinkage stress of the strands concentrates in other strands, and the adherend and the pressure-sensitive adhesive are finally peeled off by repeating this process. In such a peeling mechanism, when the pressure-sensitive adhesive is stretched at a constant stress, an effect (shrinkage effect) is produced in which the stress required until peeling occurs in other strands is reduced as the stress concentration due to the strands is increased, and thus peeling between the adherend and the pressure-sensitive adhesive is likely to occur. The present inventors have found that the ratio of such a contraction effect can be estimated by measuring the tensile-compression behavior in a tensile test, and have completed the present invention.
One aspect of the present invention provides a method for evaluating a photocurable pressure-sensitive adhesive used in dicing a die-bonding integral film. The evaluation method of the photo-curing pressure-sensitive adhesive comprises the following steps: a first step of preparing a photocurable pressure-sensitive adhesive sheet comprising a photocurable pressure-sensitive adhesive, subjecting the photocurable pressure-sensitive adhesive sheet to a tensile test under the following tensile-compression conditions, preparing a graph of the test force versus displacement, and obtaining the area surrounded by the hysteresis loop from the obtained hysteresis loop as the loss work; a step 2 of preparing a dicing die-bonding integral film in which a base layer, a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive, and an adhesive layer are sequentially laminated, irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays under the following irradiation conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and measuring a peeling force when the cured product of the adhesive layer and the photocurable pressure-sensitive adhesive layer is peeled under the following peeling conditions; and a 3 rd step of judging whether the photocurable pressure-sensitive adhesive is good or not based on the loss work and the peeling force.
(conditions of stretching and compression)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Distance between chucks: 40mm
Stretching conditions are as follows: the tensile elongation test force at 500 mm/min was 0.5N
Compression conditions are as follows: compressed at 500 mm/min to a displacement of 0mm
(irradiation conditions)
Irradiation intensity: 70mW/cm2
Cumulative light quantity: 150mJ/cm2
(stripping Condition)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Peeling angle: 30 degree
Stripping speed: 600 mm/min
Such a method for evaluating a photocurable pressure-sensitive adhesive is useful for predicting in advance whether or not a photocurable pressure-sensitive adhesive intended for use as a photocurable pressure-sensitive adhesive layer for dicing a die-bonding integral film suppresses chip lifting and is excellent in pick-up properties.
The 3 rd step may be a step of determining whether the photocurable pressure-sensitive adhesive is good or not, based on whether or not the peeling force and the number and width of the drawn marks satisfy the following condition (a) and the following condition (b).
Condition (a): the work loss is 1.21 N.mm or more.
Condition (b): the peel force is 0.60N/25mm or less.
Another aspect of the present invention provides a method for manufacturing a dicing die-bonding integrated film, including: a step of forming a photocurable pressure-sensitive adhesive layer on the base material layer, the photocurable pressure-sensitive adhesive layer being formed of a photocurable pressure-sensitive adhesive judged to be good by the method for evaluating a photocurable pressure-sensitive adhesive; and a step of forming an adhesive layer on the photocurable pressure-sensitive adhesive layer.
Another aspect of the present invention provides a method of manufacturing a semiconductor device, including: attaching the adhesive layer of the dicing die-bonding integral film obtained by the above manufacturing method to a semiconductor wafer; a step of singulating at least the semiconductor wafer and the adhesive layer by dicing; a step of irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays to form a cured product of the photocurable pressure-sensitive adhesive layer; picking up the semiconductor element to which the adhesive layer is attached from the cured product of the photocurable pressure-sensitive adhesive layer; and a step of bonding the semiconductor element to the support substrate for mounting the semiconductor element via the adhesive layer.
The thickness of the semiconductor wafer may be 35 μm or less. The cutting may be adapted for stealth cutting.
Another aspect of the present invention provides a dicing die-bonding integrated film, which includes: a substrate layer; a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive judged to be good by the method for evaluating a photocurable pressure-sensitive adhesive; and an adhesive layer.
Effects of the invention
According to the present invention, there is provided a method for evaluating a novel photocurable pressure-sensitive adhesive for dicing a die-bonding integral film. Further, the present invention provides a dicing die-bonding integral film and a method for producing the same, based on the evaluation method of the photocurable pressure-sensitive adhesive. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device using such a dicing die-bonding integrated film.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of cutting a die-bonding integral film.
Fig. 2 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device, and (a), (b), (c), (d), and (e) of fig. 2 are schematic cross-sectional views showing respective steps.
Fig. 3 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device, and (f), (g), (h), and (i) of fig. 3 are schematic cross-sectional views showing respective steps.
Fig. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, unless otherwise explicitly stated, constituent elements (including steps and the like) thereof are not essential. The sizes of the components in the drawings are conceptual sizes, and the relative relationship between the sizes of the components is not limited to the relationship shown in the drawings.
The same applies to numerical values and ranges thereof in the present specification, and the present invention is not limited thereto. In the present specification, a numerical range represented by "to" means a range in which numerical values before and after "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges recited in the present specification, an upper limit or a lower limit recited in one numerical range may be replaced with an upper limit or a lower limit recited in another numerical range recited in a stepwise manner. In the numerical ranges described in the present specification, the upper limit or the lower limit of the numerical range may be replaced with the values shown in the examples.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth) acryloyl group and (meth) acrylic acid copolymer.
In the present specification, "stringing" refers to a deformed form of the pressure-sensitive adhesive between the adherend and the pressure-sensitive adhesive, and refers to a large deformation of the pressure-sensitive adhesive between the adherend and the pressure-sensitive adhesive, like a line, and, depending on the case, a wall, without breaking between the pressure-sensitive adhesive and the adherend when the adherend and the pressure-sensitive adhesive are peeled off.
[ evaluation method of Photocurable pressure-sensitive adhesive ]
The method for evaluating a photocurable pressure-sensitive adhesive used in a dicing die-bonding integral film according to an embodiment includes: a first step of preparing a photocurable pressure-sensitive adhesive sheet comprising a photocurable pressure-sensitive adhesive, subjecting the photocurable pressure-sensitive adhesive sheet to a tensile test under the following tensile-compression conditions, preparing a graph of the test force versus displacement, and obtaining the area surrounded by the hysteresis loop from the obtained hysteresis loop as the loss work; a step 2 of preparing a dicing die-bonding integral film in which a base layer, a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive, and an adhesive layer are sequentially laminated, irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays under the following irradiation conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and measuring a peeling force when the cured product of the photocurable pressure-sensitive adhesive layer is peeled from the base layer under the following peeling conditions; and a 3 rd step of judging whether the photocurable pressure-sensitive adhesive is good or not based on the loss work and the peeling force.
Hereinafter, a dicing die-bonding integral film including a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive and a photocurable pressure-sensitive adhesive layer to be evaluated and a method for manufacturing the same will be described first, and then factors that influence loss work as an evaluation criterion will be examined, and finally, each step will be described.
< Photocurable pressure-sensitive adhesive >
In the method for evaluating a photocurable pressure-sensitive adhesive according to the present embodiment, a photocurable pressure-sensitive adhesive cured by irradiation of ultraviolet rays can be an object to be evaluated. Hereinafter, as an example of the photocurable pressure-sensitive adhesive to be evaluated, a photocurable pressure-sensitive adhesive containing a (meth) acrylic copolymer having a reactive functional group, a photopolymerization initiator, and a crosslinking agent having 2 or more functional groups capable of reacting with the reactive functional group will be described.
(meth) acrylic acid copolymer having reactive functional group)
The (meth) acrylic copolymer having a reactive functional group can be obtained, for example, by copolymerizing one or two or more (meth) acrylate monomers (a1) or (meth) acrylic acid with one or two or more polymerizable compounds (a2) having a reactive functional group.
The (meth) acrylate monomer (a1) may be at least one selected from the group consisting of, for example, a linear or branched alkyl (meth) acrylate, an alicyclic (meth) acrylate, an aromatic (meth) acrylate, an alkoxyalkyl (meth) acrylate, an alkoxy (poly) alkylene glycol (meth) acrylate, an alkoxyalkoxyalkyl (meth) acrylate, and a dialkylaminoalkyl (meth) acrylate.
Examples of the linear or branched alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, ethylhexyl (meth) acrylate, stearyl (meth) acrylate, lauryl (meth) acrylate, and tridecyl (meth) acrylate.
Examples of the alicyclic (meth) acrylate include cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and the like.
Examples of the aromatic (meth) acrylate include phenoxyethyl (meth) acrylate and the like.
Examples of the alkoxyalkyl (meth) acrylate include ethoxyethyl (meth) acrylate and butoxyethyl (meth) acrylate.
Examples of the alkoxy (poly) alkylene glycol (meth) acrylate include methoxy diethylene glycol (meth) acrylate, ethoxy diethylene glycol (meth) acrylate, methoxy triethylene glycol (meth) acrylate, butoxy triethylene glycol (meth) acrylate, and methoxy dipropylene glycol (meth) acrylate.
Examples of the alkoxyalkoxyalkyl (meth) acrylate include 2-methoxyethoxyethyl (meth) acrylate, 2-ethoxyethoxyethyl (meth) acrylate, and the like.
Examples of the dialkylaminoalkyl (meth) acrylate include N, N-dimethylaminoethyl (meth) acrylate, N-diethylaminoethyl (meth) acrylate, and the like.
The polymerizable compound (a2) may have at least one reactive functional group selected from the group consisting of a hydroxyl group and an epoxy group. The hydroxyl group and the epoxy group are suitably used because they have good reactivity with the compound (b) having an isocyanate group or the like. The polymerizable compound (a2) preferably has a hydroxyl group.
Examples of the polymerizable compound (a2) having a hydroxyl group as a reactive functional group include hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 2-hydroxypropyl (meth) acrylate.
Examples of the polymerizable compound (a2) having an epoxy group as a reactive functional group include epoxy group-containing (meth) acrylates such as glycidyl (meth) acrylate and 3, 4-epoxycyclohexyl (meth) acrylate.
The (meth) acrylic acid copolymer may contain (meth) acrylic acid as a monomer unit. In addition, other polymerizable compounds may be contained as monomer units in addition to the (meth) acrylate monomer (a1) and the polymerizable compound (a 2). Examples of the other polymerizable compound include aromatic vinyl compounds such as styrene and vinyl toluene.
The (meth) acrylic copolymer having a reactive functional group may further have a functional group capable of chain polymerization. That is, the resin composition may have a main chain formed of a (meth) acrylic copolymer having a reactive functional group and a side chain bonded to the main chain and including a polymerizable double bond. The side chain containing a polymerizable double bond may be a (meth) acryloyl group, but is not limited thereto. The (meth) acrylic copolymer having a functional group capable of chain polymerization can be obtained by reacting with one or two or more compounds (b) containing a functional group capable of chain polymerization and a functional group capable of chain polymerization that reacts with the reactive functional group of the (meth) acrylic copolymer having a reactive functional group to introduce the functional group capable of chain polymerization into a side chain of the (meth) acrylic copolymer.
Examples of the functional group that reacts with a reactive functional group (epoxy group, hydroxyl group, etc.) include an isocyanate group and the like.
Specific examples of the compound (b) having an isocyanate group include 2-methacryloyloxyethyl isocyanate (for example, trade name "Karenz MOI" manufactured by SHOWA DENKO k.k.).
The content of the compound (b) may be 0.3 to 1.5mmol/g based on the (meth) acrylic copolymer having a reactive functional group.
The acid value of the (meth) acrylic copolymer having a reactive functional group may be, for example, 1 to 150mgK OH/g. The hydroxyl value of the (meth) acrylic copolymer having a reactive functional group may be, for example, 1 to 150 mgKOH/g. The acid value and the hydroxyl value were measured in accordance with JIS K0070.
The weight average molecular weight (Mw) of the (meth) acrylic copolymer having a reactive functional group may be 10 to 100, 20 to 60, or 25 to 40 ten thousand. The weight average molecular weight is a polystyrene conversion value obtained by Gel Permeation Chromatography (GPC) using a calibration curve based on standard polystyrene.
(photopolymerization initiator)
The photopolymerization initiator is not particularly limited as long as polymerization is initiated by irradiation of ultraviolet rays, and examples thereof include a photo radical polymerization initiator. Examples of the photo radical polymerization initiator include benzoin ketals (benzoin ketals) such as 2, 2-dimethoxy-1, 2-diphenylethane-1-one; α -hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone; α -aminoketones such as 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one; oxime esters such as 1- [4- (phenylthio) phenyl ] -1, 2-octanedione-2- (benzoyl) oxime; phosphine oxides such as bis (2, 4, 6-trimethylbenzoyl) phenylphosphine oxide; 2, 4, 5-triarylimidazole dimers such as 2- (o-chlorophenyl) -4, 5-diphenylimidazole dimer; benzophenone compounds such as benzophenone and N, N '-tetramethyl-4, 4' -diaminobenzophenone; quinone compounds such as 2-ethylanthraquinone; benzoin ethers such as benzoin methyl ether; benzoin compounds such as benzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine: n-phenylglycine, coumarin, and the like. These may be used alone or in combination of two or more, and may be used in combination with an appropriate sensitizer.
The content of the photopolymerization initiator may be 0.1 to 20 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 3 parts by mass, relative to 100 parts by mass of the (meth) acrylic copolymer.
(crosslinking agent)
The crosslinking agent is not particularly limited as long as it is a compound having 2 or more functional groups capable of reacting with the reactive functional group (epoxy group, hydroxyl group, etc.) of the (meth) acrylic copolymer having a reactive functional group. The bond formed by the reaction of the crosslinking agent and the (meth) acrylic copolymer having a reactive functional group includes, for example, an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, a urea bond, and the like.
Examples of the crosslinking agent include compounds having 2 or more isocyanate groups in one molecule. When such a compound is used, the compound is easily reacted with the reactive functional group of the (meth) acrylic copolymer, and therefore, the tackiness and stringing tend to be easily controlled.
Examples of the compound having 2 or more isocyanate groups in one molecule include isocyanate compounds such as 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 1, 3-xylylene diisocyanate, 1, 4-xylylene diisocyanate, diphenylmethane-4, 4 '-diisocyanate, diphenylmethane-2, 4' -diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4 '-diisocyanate, dicyclohexylmethane-2, 4' -diisocyanate, and lysine isocyanate.
Specific examples of the compound having 2 or more isocyanate groups in one molecule include polyfunctional isocyanates (product name "coronate L" manufactured by Nippon Polyurethane Industry co., ltd.).
The crosslinking agent may be a reaction product of the isocyanate compound and a polyol having 2 or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). Examples of the polyhydric alcohol having 2 or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1, 6-hexanediol, 1, 8-octanediol, 1, 9-nonanediol, 1, 10-decanediol, 1, 11-undecanediol, 1, 12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1, 4-cyclohexanediol, and 1, 3-cyclohexanediol.
Among them, the crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate having 2 or more isocyanate groups in one molecule and a polyol having 3 or more hydroxyl groups in one molecule. By using such an isocyanate group-containing oligomer as a crosslinking agent, the photocurable pressure-sensitive adhesive layer 20 tends to form a more densely crosslinked structure.
The content of the crosslinking agent may be, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 5 to 10 parts by mass based on the total mass of the (meth) acrylic copolymer.
< dicing die-bonding integral film and method for producing the same >
Fig. 1 is a schematic cross-sectional view showing one embodiment of cutting a die-bonding integral film. The dicing die-bonding integrated film 1 is formed by laminating a base material layer 10, a photocurable pressure-sensitive adhesive layer 20 formed of a photocurable pressure-sensitive adhesive, and an adhesive layer 30 in this order.
(substrate layer)
The base layer 10 may be a known polymer sheet or film, and is not particularly limited as long as it is made of a material that can be expanded in the die bonding step. Examples of such materials include polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene; ethylene-vinyl acetate copolymers; an ionomer resin; ethylene- (meth) acrylic acid copolymers; ethylene- (meth) acrylate (random, alternating) copolymers; ethylene-propylene copolymers; ethylene-butene copolymers; ethylene-hexene copolymers; a polyurethane; polyesters such as polyethylene terephthalate and polyethylene naphthalate; a polycarbonate; a polyimide; polyether ether ketone; a polyimide; a polyetherimide; a polyamide; wholly aromatic polyamide; polyphenylene sulfide; aramid (paper); glass; glass cloth; a fluororesin; polyvinyl chloride; polyvinylidene chloride; a cellulose-based resin; silicone resins, and the like. These materials may be materials mixed with plasticizers, silica, anti-blocking materials, slip agents, antistatic agents, and the like.
Among them, the base layer 10 may be a base layer having a surface containing at least one material selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer and polyethylene-polypropylene block copolymer as a main component and the surface being in contact with the photocurable pressure-sensitive adhesive layer 20, from the viewpoints of characteristics such as young's modulus, stress relaxation property, melting point, price, recycling of waste after use, and the like. The base layer 10 may be a single layer or may be a multilayer of 2 or more layers made of different materials. The base layer 10 may be subjected to surface roughening treatment such as corona discharge treatment and matte treatment as necessary, from the viewpoint of controlling adhesion to the photocurable pressure-sensitive adhesive layer 20 described later.
The thickness of the base material layer 10 may be, for example, 70 to 120 μm or 80 to 100 μm. When the thickness of the base material layer 10 is 70 μm or more, the breakage due to the expansion tends to be further suppressed. When the thickness of the base material layer 10 is 120 μm or less, the stress at the time of pickup easily reaches the adhesive layer, and the pickup property tends to be further excellent.
(Photocurable pressure-sensitive adhesive layer)
The photocurable pressure-sensitive adhesive layer 20 is a layer formed of the above-described photocurable pressure-sensitive adhesive. The photocurable pressure-sensitive adhesive layer 20 is formed on the base material layer 10. Examples of the method for forming the photocurable pressure-sensitive adhesive layer 20 on the base layer 10 include: a method of preparing a varnish for forming a photocurable pressure-sensitive adhesive layer, and applying the varnish to the base layer 10 to form a photocurable pressure-sensitive adhesive layer 20; a method in which the varnish is applied to a mold-released film to form a photocurable pressure-sensitive adhesive layer 20, and the resulting photocurable pressure-sensitive adhesive layer 20 is transferred to a base layer 10.
The varnish for forming a photocurable pressure-sensitive adhesive layer contains a (meth) acrylic copolymer having a reactive functional group, a photopolymerization initiator, a crosslinking agent having 2 or more functional groups capable of reacting with the reactive functional group, and an organic solvent. The organic solvent may be a solvent that can dissolve the (meth) acrylic copolymer having a reactive functional group, the photopolymerization initiator, and the crosslinking agent having 2 or more functional groups that can react with the reactive functional group and that volatilizes by heating. Examples of such an organic solvent include aromatic hydrocarbons such as toluene and xylene; cyclic ethers such as tetrahydrofuran and 1, 4-dioxane; alcohols such as methanol, ethanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; esters such as methyl acetate, ethyl acetate, and γ -butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; polyhydric alcohol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol dimethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; amides such as N, N-dimethylformamide, N-dimethylacetamide and N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. The solid content concentration of the varnish may be 10 to 60% by mass based on the total mass of the varnish.
The thickness of the photocurable pressure-sensitive adhesive layer 20 may be, for example, 1 to 200. mu.m, 5 to 50 μm, or 10 to 20 μm.
(adhesive layer)
The adhesive layer 30 is a layer formed of an adhesive. The adhesive is not particularly limited as long as it is used in the field of die-bonding films. Hereinafter, as an example of the binder, a binder containing an epoxy resin, an epoxy resin curing agent, and a (meth) acrylic copolymer having an epoxy group will be described. The adhesive layer 30 formed of such an adhesive is excellent in adhesion between the chip and the substrate and between the chip and the chip, can provide embedding properties of an electrode, embedding properties of a wire (wire), and the like, and can be bonded at a low temperature in the die bonding step.
Examples of the epoxy resin include bisphenol a type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol a novolac type epoxy resins, bisphenol F novolac type epoxy resins, dicyclopentadiene skeleton-containing epoxy resins, stilbene type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatic compounds such as anthracene. These may be used alone or in combination of two or more.
The epoxy resin curing agent may be, for example, a phenolic resin. The phenolic resin can be used without any particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include a novolak-type phenol resin obtained by condensing or co-condensing a phenol such as phenol, cresol, resorcinol, catechol, bisphenol a, bisphenol F, phenylphenol, or aminophenol and/or a naphthol such as α -naphthol, β -naphthol, or dihydroxynaphthalene and a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst, a phenol aralkyl resin synthesized from a phenol such as allylated bisphenol a, allylated bisphenol F, allylated naphthalenediol, a phenol novolak, and a phenol and/or a naphthol such as phenol and dimethoxyp-xylene or bis (methoxymethyl) biphenyl, and a naphthol aralkyl resin. These may be used alone or in combination of two or more.
The (meth) acrylic copolymer having an epoxy group may be a copolymer in which glycidyl (meth) acrylate as a raw material is adjusted to an amount of 0.5 to 6 mass% with respect to the obtained copolymer. When the amount is 0.5% by mass or more, high adhesive force tends to be easily obtained, and when the amount is 6% by mass or less, gelation tends to be suppressed. The remainder of the glycidyl (meth) acrylate may be a mixture of an alkyl (meth) acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth) acrylate, styrene, acrylonitrile, or the like. The alkyl (meth) acrylate may comprise ethyl (meth) acrylate and/or butyl (meth) acrylate. The mixing ratio of the components can be adjusted in consideration of Tg (glass transition temperature) of the obtained (meth) acrylic copolymer having an epoxy group. When the Tg is-10 ℃ or higher, the adhesive layer 30 in the B-staged state tends to have good tackiness and excellent workability. The upper limit of Tg of the (meth) acrylic copolymer having an epoxy group may be, for example, 30 ℃.
The weight average molecular weight of the (meth) acrylic copolymer having an epoxy group may be 10 ten thousand or more, and may be 30 to 300 ten thousand or 50 to 200 ten thousand. If the weight average molecular weight is 300 ten thousand or less, the decrease in the filling property between the semiconductor chip and the support substrate tends to be able to be controlled. The weight average molecular weight is a polystyrene conversion value obtained by Gel Permeation Chromatography (GPC) using a calibration curve based on standard polystyrene.
The adhesive may contain a curing accelerator such as tertiary amine, imidazole, or quaternary ammonium salt, if necessary. Examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.
The binder may further contain an inorganic filler as required. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.
The adhesive layer 30 is formed on the photocurable pressure sensitive adhesive layer 20. Examples of the method for forming the adhesive layer 30 on the photocurable pressure-sensitive adhesive layer 20 include: a method of preparing a varnish for forming an adhesive layer, applying the varnish to a mold-release-treated film to form an adhesive layer 30, and transferring the obtained adhesive layer 30 to a photocurable pressure-sensitive adhesive layer 20. The binder layer-forming varnish contains an epoxy resin, an epoxy resin curing agent, a (meth) acrylic copolymer having an epoxy group, and an organic solvent. The organic solvent may be the same as the organic solvent exemplified as the organic solvent used in the varnish for forming the photocurable pressure-sensitive adhesive layer.
The thickness of the adhesive layer 30 may be, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm.
[ influencing factors of work loss ]
The work loss may be affected by an interaction (e.g., a stringing phenomenon, etc.) at the interface of the photocurable pressure-sensitive adhesive layer and the adherend (adhesive layer). Therefore, one of the factors that influence the work loss is the type and content of the crosslinking agent. For example, if the content of the crosslinking agent is decreased, the work loss tends to be large, and if the content of the crosslinking agent is increased, the work loss tends to be small. Therefore, the work loss can be controlled by adjusting the type and content of the crosslinking agent. Further, as other factors that influence the loss work, for example, coating conditions may be mentioned.
< step 1 >
In this step, a photocurable pressure-sensitive adhesive sheet made of a photocurable pressure-sensitive adhesive is first prepared.
The photocurable pressure-sensitive adhesive sheet is formed of a photocurable pressure-sensitive adhesive. The photocurable pressure-sensitive adhesive sheet can be obtained, for example, by preparing the above varnish for photocurable pressure-sensitive adhesive layer formation, applying the varnish to a polyethylene terephthalate (PET) film subjected to a mold release treatment, and removing volatile components of the varnish to form a photocurable pressure-sensitive adhesive layer. The photocurable pressure-sensitive adhesive sheet may have a polyethylene terephthalate (PET) film as a protective film disposed on the photocurable pressure-sensitive adhesive layer. The size of the photocurable pressure-sensitive adhesive sheet is not particularly limited as long as the distance between chucks can be ensured to be 40mm in a tensile test described later. The thickness of the photocurable pressure-sensitive adhesive sheet can be set to, for example, 10 μm.
Next, a tensile test was performed on the photocurable pressure-sensitive adhesive sheet under the following tensile compression conditions. A graph of the test force versus displacement in the tensile test was prepared, and the area surrounded by the hysteresis loop was obtained from the obtained hysteresis loop as the loss work. When the loss work is determined, any evaluation process analysis software may be used.
(conditions of stretching and compression)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Distance between chucks: 40mm
Stretching conditions are as follows: the tensile elongation test force at 500 mm/min was 0.5N
Compression conditions are as follows: compressed at 500 mm/min to a displacement of 0mm
< 2 nd step >
In this step, first, a dicing die-bonding integrated film for evaluation is prepared in which a base layer, a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive to be evaluated, and an adhesive layer are sequentially stacked.
In the dicing die-bonding integral film for evaluation, the types of the base layer, the photocurable pressure-sensitive adhesive layer, the adhesive layer, and the like are not particularly limited, and an arbitrarily selected dicing die-bonding integral film can be used. The thickness of the photocurable pressure-sensitive adhesive formed of the photocurable pressure-sensitive adhesive as an evaluation target can be set to, for example, 10 μm. The thickness of the adhesive layer can be set to 10 μm, for example.
Next, the photocurable pressure-sensitive adhesive layer was irradiated with ultraviolet rays under the irradiation conditions described below to cure the photocurable pressure-sensitive adhesive, thereby forming a cured product of the photocurable pressure-sensitive adhesive layer (a layer including a cured product of the photocurable pressure-sensitive adhesive). The light source of the ultraviolet ray can be appropriately selected from the optimum light sources according to the kind of the photopolymerization initiator used. The light source of the ultraviolet ray is not particularly limited, and may be one selected from the group consisting of a low-pressure mercury lamp, a far ultraviolet lamp, an excimer ultraviolet lamp, a high-pressure mercury lamp, and a metal halide lamp. Among them, the light source of ultraviolet rays is preferably a high-pressure mercury lamp having a center wavelength of 365 nm. In addition, in the irradiation with ultraviolet rays, a cold mirror or the like may be used in combination in order to reduce the influence of heat emitted from the light source.
(irradiation conditions)
Irradiation intensity: 70mW/cm2
Cumulative light quantity: 150mJ/cm2
The irradiation temperature under the irradiation conditions of ultraviolet rays may be 60 ℃ or lower or 40 ℃ or lower.
Finally, the peel force (low angle peel strength) when the cured product of the photocurable pressure-sensitive adhesive layer was peeled from the base layer under the following peeling conditions was measured. When the cured product of the photocurable pressure-sensitive adhesive layer is peeled from the base layer, it is preferable to use a peel strength measuring device capable of adjusting the peeling angle by attaching a pressure-sensitive adhesive tape, a support tape, or the like to the adhesive layer and stretching the tape.
(stripping Condition)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Peeling angle: 30 degree
Stripping speed: 600 mm/min
Further, the lower the peel angle, the more likely the influence of the base material layer in the peel force can be eliminated, but when it is less than 15 °, the measurement becomes difficult. Therefore, 30 ° is suitable as a test condition for low-angle peel strength.
< step 3 >
In this step, the quality of the photocurable pressure-sensitive adhesive is determined based on the work loss and the peeling force. The values of the loss work and the peeling force as evaluation criteria can be set to arbitrary values according to the thickness of the semiconductor wafer and the like.
The 3 rd step may be a step of determining whether the photocurable pressure-sensitive adhesive is good or not, depending on whether or not the loss work and the peeling force satisfy the following condition (a) and the following condition (b). A dicing die-bonding integral film having a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive satisfying the following condition (a) and the following condition (b) can be suitably used in a dicing process (for example, stealth dicing) applied to a semiconductor wafer having a relatively thin thickness (for example, 35 μm or less).
Condition (a): the work loss is 1.21 N.mm or more.
Condition (b): the peel force is 0.60N/25mm or less.
By satisfying the condition (a), chip floating in the manufacture of semiconductor chips tends to be further suppressed. The work loss under the condition (a) may be 1.22 N.mm or more or 1.24 N.mm or more. The upper limit of the work loss in the condition (a) is not particularly limited, but may be 1.40N · mm or less.
By satisfying the condition (b), the pick-up property in the manufacture of semiconductor chips tends to be further improved. The peel force of the condition (b) may be 0.59N/25mm or less or 0.58N/25mm or less. The lower limit of the peeling force in the condition (b) is not particularly limited, but may be 0.54N/25mm or more.
[ method for producing dicing die-bonding integral film ]
The method for manufacturing a dicing die-bonding integrated film according to an embodiment includes: a step of forming a photocurable pressure-sensitive adhesive layer on the base material layer, the photocurable pressure-sensitive adhesive layer being formed of a photocurable pressure-sensitive adhesive judged to be good by the method for evaluating a photocurable pressure-sensitive adhesive; and a step of forming an adhesive layer on the photocurable pressure-sensitive adhesive layer. The base layer and the adhesive layer may be the same as those exemplified in the above-described method for evaluating a photocurable pressure-sensitive adhesive. The method for forming the photocurable pressure-sensitive adhesive layer and the method for forming the adhesive layer may be the same as those exemplified in the above-mentioned method for evaluating the photocurable pressure-sensitive adhesive.
[ dicing die-bonding integral film ]
The dicing die-bonding integrated film according to one embodiment includes, in order: a base layer, a photocurable pressure-sensitive adhesive layer formed from a photocurable pressure-sensitive adhesive judged to be good by the evaluation method for the photocurable pressure-sensitive adhesive, and an adhesive layer. The base layer and the adhesive layer may be the same as those exemplified in the above-described method for evaluating a photocurable pressure-sensitive adhesive.
[ method for manufacturing semiconductor device (semiconductor Package) ]
Fig. 2 and 3 are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to the present embodiment includes: a step of attaching the adhesive layer 30 of the dicing die-bonding integral film 1 obtained by the above-described manufacturing method to the semiconductor wafer W2 (wafer laminating step), a step of singulating the semiconductor wafer W2, the adhesive layer 30 and the photocurable pressure-sensitive adhesive layer 20 (dicing step), a step of irradiating the photocurable pressure-sensitive adhesive layer 20 with ultraviolet rays (ultraviolet irradiation step), a step of picking up the semiconductor element (semiconductor element with adhesive layer 50) to which the adhesive layer 30a is attached from the base material layer 10 (picking-up step), and a step of bonding the semiconductor element with adhesive layer 50 to the semiconductor element mounting support substrate 60 via the adhesive layer 30a (semiconductor element bonding step).
The dicing in the dicing step is not particularly limited, and examples thereof include blade dicing, laser dicing, stealth dicing, and the like. When the thickness of the semiconductor wafer W2 is 35 μm or less, stealth dicing can be applied. Hereinafter, a mode in which stealth dicing is mainly used as dicing will be described in detail.
< modified layer Forming step >
When the stealth dicing is applied to the dicing, the method for manufacturing a semiconductor device may include a modified layer forming step before the wafer laminating step.
First, a semiconductor wafer W1 having a thickness of H1 is prepared. The thickness H1 of the semiconductor wafer W1 on which the modified layer is formed may exceed 35 μm. Next, the protective film 2 is attached to one main surface of the semiconductor wafer W1 (see fig. 2 (a)). The surface to which the protective film 2 is attached is preferably a circuit surface of the semiconductor wafer W1. The protective film 2 may be a back grinding tape used for back grinding (back grinding) of a semiconductor wafer. Next, the inside of the semiconductor wafer W1 is irradiated with laser light to form the modified layer 4 (see fig. 2 b), and the side (back surface side) of the semiconductor wafer W1 opposite to the side to which the protective film 2 is attached is subjected to back grinding (back grinding) and polishing (grinding), whereby a semiconductor wafer W2 having the modified layer 4 is produced (see fig. 2 c). The thickness H2 of the obtained semiconductor wafer W2 may be 35 μm or less.
< wafer laminating step >
Next, the adhesive layer 30 of the dicing die-bonding integral film 1 is disposed in a predetermined apparatus. Next, the dicing die-bonding integral film 1 is attached to the main surface Ws of the semiconductor wafer W2 via the adhesive layer 30 (see fig. 2(d)), and the protective film 2 of the semiconductor wafer W2 is peeled off (see fig. 2 (e)).
< cutting step >
Next, at least the semiconductor wafer W2 and the adhesive layer 30 are singulated by dicing (see fig. 3 (f)). When stealth dicing is applied to dicing, the dicing can be singulated by performing cold expansion and heat shrinkage.
< ultraviolet irradiation step >
Next, the photocurable pressure-sensitive adhesive in the photocurable pressure-sensitive adhesive layer 20 is cured by irradiating the photocurable pressure-sensitive adhesive layer 20 with ultraviolet rays, thereby forming a cured product of the photocurable pressure-sensitive adhesive layer (a layer including a cured product of the photocurable pressure-sensitive adhesive) (refer to fig. 3 (g)). This can reduce the adhesive force between the photocurable pressure-sensitive adhesive layer 20 and the adhesive layer 30. In the ultraviolet irradiation, ultraviolet rays having a wavelength of 200 to 400nm can be used. The ultraviolet irradiation conditions are preferably adjusted to illuminance: 30-240 mW/cm2And the irradiation dose is 200 to 500mJ/cm2。
< picking-up Process >
Next, the semiconductor elements 50 with the adhesive layer that have been cut are separated from each other by expanding the base material layer 10, and the semiconductor elements 50 with the adhesive layer that have been pushed out from the base material layer 10 side by the ejector pins 42 are sucked by the suction chuck 44 and picked up from the cured product 20ac of the photocurable pressure-sensitive adhesive layer (see fig. 3 (h)). In addition, the semiconductor element 50 with an adhesive layer has a semiconductor element Wa and an adhesive layer 30 a. The semiconductor element Wa is obtained by dicing the semiconductor wafer W2, and the adhesive layer 30a is obtained by dicing the adhesive layer 30. The cured product 20ac of the photocurable pressure-sensitive adhesive layer is obtained by cutting the cured product of the photocurable pressure-sensitive adhesive layer. The cured product 20ac of the photocurable pressure-sensitive adhesive layer may remain on the base layer 10 when the adhesive layer-attached semiconductor element 50 is picked up. In the pickup step, the expansion is not necessarily required, but the pickup performance can be further improved by the expansion.
The ejection amount of the thimble 42 can be set as appropriate. In addition, in view of ensuring sufficient pickup performance even for an extremely thin wafer, for example, 2-stage or 3-stage pickup is possible. Further, the semiconductor element 50 with the adhesive layer may be picked up by a method other than the method using the suction chuck 44.
< semiconductor element bonding Process >
After the semiconductor element 50 with the adhesive layer is picked up, the semiconductor element 50 with the adhesive layer is bonded to the support substrate 60 for mounting a semiconductor element through the adhesive layer 30a by thermocompression bonding (see fig. 3 (f)). The semiconductor device 50 with the adhesive layer can be bonded to the semiconductor device mounting support substrate 60.
Fig. 4 is a cross-sectional view schematically showing one embodiment of a semiconductor device. The semiconductor device 100 shown in fig. 4 can be manufactured by a manufacturing method including the above steps and further including the following steps: a step of electrically connecting the semiconductor element Wa to the semiconductor element mounting support substrate 60 by a wire bond (wire bond) 70; and a step of resin-sealing the semiconductor element Wa with a resin sealing material 80 on the surface 60a of the support substrate 60 for mounting a semiconductor element. Solder balls 90 may be formed on the surface of the semiconductor element mounting support substrate 60 opposite to the surface 60a, for electrical connection to an external substrate (motherboard).
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. In addition, a commercially available reagent was used as the compound unless otherwise specified.
[ preparation of dicing die-bonding integral film ]
(preparation of (meth) acrylic acid copolymer solution)
In a 2000mL autoclave equipped with a Three-One Motor, a stirring blade and a nitrogen introduction tube, 79 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA) and 2 parts by mass of methacrylic acid (MAA) were added, and 127 parts by mass of ethyl acetate and 0.04 part by mass of azobisisobutyronitrile were further added. It was stirred until it became uniform, and bubbling (bubbling) was performed at a flow rate of 500ml/min for 60 minutes to degas the dissolved oxygen in the system. Subsequently, the temperature was raised to 80 ℃ over 1 hour, and polymerization was carried out for 6 hours while maintaining 80 ℃. Then, the reaction solution was transferred to a 2000mL autoclave equipped with a Three-One Motor, a stirring blade, and a nitrogen introduction tube, heated at 120 ℃ and 0.28MPa for 6 hours, and then cooled to room temperature (25 ℃ C., the same applies hereinafter). Then, 89 parts by mass of ethyl acetate was further added thereto to dilute the mixture. To this, 0.005 parts by mass of dibutylhydroxytoluene as a polymerization inhibitor and 0.011 parts by mass of dioctyltin dilaurate as a urethane-forming catalyst were added, and 14 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by SHOWA DENKO k.k., trade name "karez MOI") as a compound having a functional group capable of chain polymerization was added, and the mixture was reacted at 70 ℃ for 12 hours and cooled to room temperature. Then, ethyl acetate was added so that the nonvolatile content (solid content) became 35% by mass, to obtain a (meth) acrylic copolymer solution having a hydroxyl group as a reactive functional group.
The acid value and hydroxyl value of the (meth) acrylic copolymer in the (meth) acrylic copolymer solution were measured in accordance with JIS K0070. The acid value was 10.2mgKOH/g, and the hydroxyl value was 80.0 mgKOH/g. The obtained acrylic resin was dried in vacuum at 60 ℃ overnight, and the obtained solid content was subjected to elemental analysis using a fully automatic elemental analyzer varioEL manufactured by Elementar corporation, and the content of the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content. The content of 2-methacryloyloxyethyl isocyanate was 0.90 mmol/g. Further, the weight average molecular weight (Mw) in terms of polystyrene was measured using SD-8022/DP-8020/RI-8020 manufactured by TOSOH CORPORATION as a GPC apparatus, Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent. The weight average molecular weight was 27 ten thousand.
< production example 1: production of Photocurable pressure-sensitive adhesive sheet A and dicing die-bonding Integrated film A >
(preparation of photocurable pressure-sensitive adhesive A)
The (meth) acrylic copolymer solution prepared in the above as a (meth) acrylic copolymer having a reactive functional group was mixed by 100 parts by mass in terms of solid content, 0.6 parts by mass of 1-hydroxycyclohexyl phenyl ketone (IRGACURE 184, manufactured by Ciba specialty Chemicals) and 0.3 parts by mass of bis (2, 4, 6-trimethylbenzoyl) -phenyl phosphine oxide (IRGACURE 819, manufactured by Ciba specialty Chemicals) as a photopolymerization initiator, and 6.8 parts by mass of polyfunctional isocyanate (nippon Polyurethane Industry co., ltd., manufactured by ltd., trade name "Coronate L", solid content 75%) as a crosslinking agent. Ethyl acetate was added to the mixture so that the total solid content became 25 mass%, and the mixture was uniformly stirred for 10 minutes to obtain a varnish of the photocurable pressure-sensitive adhesive a.
(preparation of photo-curable pressure-sensitive adhesive sheet)
The varnish of the photocurable pressure-sensitive adhesive a was applied to a polyethylene terephthalate (PET) film having a thickness of 20 μm, which was subjected to a release treatment on one side, using a coater so that the thickness of the photocurable pressure-sensitive adhesive layer (photocurable pressure-sensitive adhesive sheet) after drying became 10 μm. The coating was performed at a speed of 3.0 m/min, a first drying furnace temperature of 80 ℃ and a second drying furnace temperature of 80 ℃. A PET film having a thickness of 38 μm was disposed on the obtained photocurable pressure-sensitive adhesive layer (photocurable pressure-sensitive adhesive sheet), to obtain a photocurable pressure-sensitive adhesive layer (photocurable pressure-sensitive adhesive sheet) sandwiched between 2 PET films.
(preparation of dicing film)
While adjusting the gap, the varnish of the photocurable pressure-sensitive adhesive a was applied to a polyethylene terephthalate (PET) film having a width of 350mm, a length of 400mm, and a thickness of 38 μm, which had been subjected to a release treatment on one surface, so that the thickness of the photocurable pressure-sensitive adhesive layer after drying became 10 μm, and the varnish for forming a photocurable pressure-sensitive adhesive layer was heat-dried at 80 to 100 ℃ for 3 minutes. Then, a polyolefin film (substrate layer, thickness: 90 μm) having one surface subjected to corona discharge treatment was laminated, cured at 40 ℃ for 72 hours, and subjected to crosslinking treatment, thereby obtaining a dicing film having a substrate layer and a photocurable pressure-sensitive adhesive layer. In addition, the crosslinking treatment was performed while confirming the progress of curing by using FT-IR spectroscopy.
(preparation of die bond film)
A silica filler which is prepared by coating silica surfaces with dimethyldichlorosilane and hydrolyzing the silica filler in a reactor at 400 ℃ to be surface-modified with organic groups such as methyl groups, was prepared by 55 parts by mass of YDCN-703(Tohto Kasei Co., Ltd., trade name, cresol novolak type epoxy resin, epoxy equivalent 210, molecular weight 1200, softening point 80 ℃), 45 parts by mass of Milex XLC-LL (manufactured by Mitsui Chemicals, Inc., trade name, hydroxyl equivalent 175, water absorption 1.8%, and heating mass reduction rate 4% at 350 ℃), 1.7 parts by mass of NUCA-189 (manufactured by Nippon Unica Co., Ltd., trade name, gamma-mercaptopropyltrimethoxysilane) and NUCA-1160 (manufactured by Nippon Unica Co., Ltd., trade name, gamma-ureidopropyltriethoxysilane) as silane coupling agents, and AEROSIL R972 (silica filler whose silica surfaces are coated with dimethyldichlorosilane and are hydrolyzed in a reactor at 400 ℃ to be surface-modified with organic groups such as methyl groups, NIPPON AEROSIL co., ltd., product name, average particle diameter 0.016 μm)32 parts by mass, cyclohexanone was added thereto, and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill. To the resulting mixture were added 280 parts by mass of HTR-860P-3 (manufactured by Naga se Chemtex Corporation, trade name, weight average molecular weight 80 ten thousand, acrylic rubber containing 3 mass% of glycidyl acrylate or glycidyl methacrylate) as an acrylic rubber and 0.5 part by mass of Curesol 2PZ-CN (manufactured by SHIKOKU CHEMICALS Corporation, trade name, 1-cyanoethyl-2-phenylimidazole) as a curing accelerator, and they were mixed with stirring and vacuum-degassed, thereby obtaining a varnish for adhesive layer formation. The obtained varnish for forming an adhesive layer was applied to a polyethylene terephthalate (PET) film having a thickness of 38 μm and subjected to a release treatment, and dried at 140 ℃ for 5 minutes to form a B-stage coating film having a thickness of 10 μm, thereby producing a die-bonding film having an adhesive layer.
(production of dicing die-bonding Integrated film)
The die bond film produced in the above was cut into a size easy to handle together with the PET film. A photocurable pressure-sensitive adhesive layer of a PET film-peeled dicing film was bonded to the adhesive layer of the diced die-bonded film, thereby obtaining a diced die-bonded integrated film a. The laminate was bonded in a clean room (clean room with a temperature of 23 ℃ and a humidity of 50%) using a laminator.
< production example 2: production of Photocurable pressure-sensitive adhesive sheet B and dicing die-bonding Integrated film B >
A photocurable pressure-sensitive adhesive sheet B and a dicing die-bonding integral film B were obtained in the same manner as in production example 1, except that the content of the crosslinking agent was changed from 6.8 parts by mass to 7.2 parts by mass.
< production example 3: production of Photocurable pressure-sensitive adhesive sheet C and dicing die-bonding Integrated film C >
A photocurable pressure-sensitive adhesive sheet C and a cut die-bonded integral film C were obtained in the same manner as in production example 1, except that the content of the crosslinking agent was changed from 6.8 parts by mass to 7.6 parts by mass.
< production example 4: production of Photocurable pressure-sensitive adhesive sheet D and dicing die-bonding Integrated film D >
A photocurable pressure-sensitive adhesive sheet D and a dicing die-bonding integral film D were obtained in the same manner as in production example 1, except that the content of the crosslinking agent was changed from 6.8 parts by mass to 4.0 parts by mass.
< production example 5: production of Photocurable pressure-sensitive adhesive sheet E and dicing die-bonding Integrated film E >
A photocurable pressure-sensitive adhesive sheet E and a dicing die-bonding integral film E were obtained in the same manner as in production example 1, except that the content of the crosslinking agent was changed from 6.8 parts by mass to 6.4 parts by mass.
< production example 6: production of Photocurable pressure-sensitive adhesive sheet F and dicing die-bonding Integrated film F >
A photocurable pressure-sensitive adhesive sheet F and a dicing die-bonding integral film F were obtained in the same manner as in production example 1, except that the content of the crosslinking agent was changed from 6.8 parts by mass to 8.0 parts by mass.
[ measurement of work loss ]
The photocurable pressure-sensitive adhesive sheets a to F were each cut out to 50mm × 50mm, the photocurable pressure-sensitive adhesive layer was peeled off from the photocurable pressure-sensitive adhesive sheet, and the photocurable pressure-sensitive adhesive layer was uniformly wound into a cylindrical shape from one side. A curing tape (TER AOKA SEISAKUSHO co., ltd., manufactured) was attached to both ends 20mm from the center (5 mm from the ends), and a tensile test was performed on the photocurable pressure-sensitive adhesive layer using a high-speed tensile tester Tensilon (manufactured by a & dccompany, Limited). Tensile test at 25 ± 5 ℃, humidity: 55. + -. 10% and the distance between chucks was set to 40 mm. In the tensile test, the test force became 0.5N at 500 mm/min in tension and the displacement became 0mm at 500 mm/min in compression. A graph of the test force (N) against the displacement (mm) was prepared, and the area surrounded by the obtained hysteresis loop was determined as the loss work. As data processing analysis software, TACT (manufactured by a & D Company, Limited) was used. The results are shown in Table 1. Further, the satisfaction of the condition (a) (loss work of 1.21N · mm or more) is also shown in table 1.
[ measurement of peeling force ]
< preparation of measurement sample >
The dicing die-bonding integrated films a to F were each cut into a width of 30mm and a length of 200mm, the PET film on the adhesive layer side of the die-bonding film was peeled off, an adhesive film (manufactured by Oji Tac co., ltd.) was attached to the adhesive layer side using a roller, and the dicing die-bonding integrated films a to F were cut into a width of 25mm and a length of 170 mm. Then, the substrate layer (polyolefin film) side of the cut crystal grain-bonded integral film with the adhesive film cut out was irradiated with an irradiation intensity of 70mW/cm at 40 ℃ or less using an ultraviolet irradiation apparatus (UV SYSTEM, manufactured by GS Yuasa Corporation, having a central wavelength of 365 nm) at an irradiation temperature of 40 ℃ or less2And the cumulative quantity of light is 150mJ/cm2The measurement sample was obtained by irradiating the cured product to form a photocurable pressure-sensitive adhesive layer.
< measurement of peeling force >
The measurement samples prepared in the above were measured for peel strength (low-angle (30 °) peel strength) when a cured product of the photocurable pressure-sensitive adhesive layer was peeled from the base layer at a temperature of 25 ± 5 ℃, a humidity of 55 ± 10%, a peel angle of 30 ° and a peel speed of 600 mm/min using an angle-free type adhesive/coating peel analysis apparatus VPA-2S (manufactured by Kyowa Interface Science co., ltd.). The same measurement was performed 3 times, and the average value was defined as the low-angle peel strength. The results are shown in Table 1. Further, the satisfaction of the condition (b) (peeling force of 0.60N/25mm or less) is also shown in Table 1.
[ evaluation of chip lifting and picking-up Properties ]
The dicing die-bonding integral films a to F of the production examples 1 to 6 thus obtained were evaluated for chip lifting (adhesion between the adhesive layer during expansion and the photocurable pressure-sensitive adhesive layer before curing) and pickup properties.
< preparation of evaluation sample >
(formation of modified layer)
A back-grinding tape was attached to one surface of a semiconductor wafer (silicon wafer (thickness 750 μm, outer diameter 12 inches)) to obtain a back-grinding tape-attached semiconductor wafer. A surface of the semiconductor wafer opposite to the side to which the back grinding tape is attached is irradiated with laser light to form a modified layer inside the semiconductor wafer. The irradiation conditions of the laser light are as follows.
Laser oscillator form: semiconductor laser excitation Q switch solid laser
Wavelength: 1342nm
Oscillation form: pulse of light
Frequency: 90kHz
And (3) outputting: 1.7W
Moving speed of mounting table of semiconductor wafer: 700 mm/sec
Subsequently, the surface of the semiconductor wafer opposite to the side to which the back grinding tape was attached was subjected to back grinding and polishing, thereby obtaining a semiconductor wafer having a thickness of 30 μm.
(wafer lamination)
The PET film of the dicing die-bonding integral film is peeled off from the surface of the semiconductor wafer opposite to the side to which the back surface polishing tape is attached, and an adhesive layer is attached.
(cutting)
Next, the semiconductor wafer with the dicing die-bonding integral film having the modified layer is fixed to the expanding device. Next, the dicing film was expanded under the following conditions, and the semiconductor wafer, the adhesive layer, and the photocurable pressure-sensitive adhesive layer were singulated. In the evaluation of chip floating described later, the sample obtained before the ultraviolet irradiation was singulated was used as an evaluation sample.
The device comprises the following steps: manufactured by DISCO CORPORATION, under the trade name "DDS 2300full Automatic Die Separator"
Cold expansion conditions:
temperature: -15 ℃, height: 9mm, cooling time: 90 seconds, speed: 300 mm/sec, standby time: 0 second
Heat shrinkage (heat expansion) condition:
temperature: 220 ℃, height: 7mm, holding time: 15 seconds, speed: 30 mm/sec, heater speed: 7 ℃/sec
(ultraviolet irradiation)
Irradiating the photo-curable pressure-sensitive adhesive layer of the singulated semiconductor wafer with an irradiation intensity of 70mW/cm2And the cumulative quantity of light is 150mJ/cm2A cured product of the photocurable pressure-sensitive adhesive layer was formed by irradiating ultraviolet rays having a central wavelength of 365 nm. In the evaluation of the pick-up property described later, a sample obtained by irradiating ultraviolet light into a single piece was used as an evaluation sample.
< evaluation of chip lifting >
Using the evaluation sample prepared in the above, adhesion between the adhesive layer and the photocurable pressure-sensitive adhesive layer was evaluated as floating of the chip by observing from the semiconductor wafer side with a microscope. In the observation using a microscope, the peripheral portion and the central portion of the semiconductor wafer are observed, and the floating region with respect to the unit semiconductor chip area is regarded as the peeling area. A portion where the peeled area of the adhesive layer and the photocurable pressure-sensitive adhesive layer was less than 15% of the total area was evaluated as "a", a portion where the peeled area of the adhesive layer and the photocurable pressure-sensitive adhesive layer was 15% or more and less than 20% of the total area was evaluated as "B", and a portion where the peeled area of the adhesive layer and the photocurable pressure-sensitive adhesive layer was 20% or more of the total area was evaluated as "C". The results are shown in Table 1.
< evaluation of pickup Property >
The singulated sample after the ultraviolet irradiation prepared in the above was evaluated by using a flexible die bonder DB-730 (manufactured by Hitachi High-Tech corporation, trade name). The pickup cartridge used was a 12.21 × 5.93mm size cartridge. The 3-stage ejection method was used, wherein the 1 st stage was performed at a speed of 1 mm/sec with a size of 11.29X 5.29mm, the 2 nd stage was performed at a speed of 10 mm/sec with a size of 9.57X 3.57mm, and the 3 rd stage was performed at a speed of 20 mm/sec with a size of 8.41X 2.41mm, and the ejection height was 350 μm. 1000 chips were picked up continuously, and a chip having a ratio of chip breakage, erroneous pickup, or the like of less than 0.5% was designated as "a" and a chip having a ratio of 0.5% or more was designated as "B". The results are shown in Table 1.
Figure BDA0003125647420000251
As shown in Table 1, the dicing die-bonding integral films A to C of production examples 1 to 3 each had a work loss of 1.21 N.mm or more and a peeling force of 0.60N/25mm or less, and both satisfied the conditions (a) and (b). The dicing die-bonding integral films A to C of production examples 1 to 3 were excellent in chip lifting and pickup properties. On the other hand, it was found that the dicing die-bonding integral films D to F of production examples 4 to 6, which did not satisfy the condition (a) or the condition (b), did not satisfy the chip floating characteristics and the pickup property.
Description of the symbols
1-dicing die-bonding integral film, 2-protective film, 4-modified layer, 10-base layer, 20-photocurable pressure-sensitive adhesive layer, cured product of 20 ac-photocurable pressure-sensitive adhesive layer, 30 a-adhesive layer, 42-thimble, 44-suction chuck, 50-semiconductor element with adhesive layer, 60-supporting substrate for semiconductor element mounting, 70-bonding wire, 80-resin sealing material, 90-solder ball, W1, W2-semiconductor wafer, H1-thickness of semiconductor wafer W1, H2-thickness of semiconductor wafer W2, 100-semiconductor device.

Claims (7)

1. A method for evaluating a photocurable pressure-sensitive adhesive for dicing a die-bonding integral film, comprising:
a first step of preparing a photocurable pressure-sensitive adhesive sheet comprising a photocurable pressure-sensitive adhesive, subjecting the photocurable pressure-sensitive adhesive sheet to a tensile test under the following tensile-compression conditions, preparing a graph of a test force versus displacement, and obtaining an area surrounded by a hysteresis loop from the hysteresis loop as a loss work;
a step 2 of preparing a dicing die-bonding integral film in which a base layer, a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive, and an adhesive layer are sequentially laminated, irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays under the following irradiation conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and measuring a peeling force when the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer are peeled off under the following peeling conditions; and
a 3 rd step of judging whether the photocurable pressure-sensitive adhesive is good or not based on the work loss and the peeling force,
(conditions of stretching and compression)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Distance between chucks: 40mm
Stretching conditions are as follows: the tensile elongation test force at 500 mm/min was 0.5N
Compression conditions are as follows: compressed at 500 mm/min to a displacement of 0mm
(irradiation conditions)
Irradiation intensity: 70mW/cm2
Cumulative light quantity: 150mJ/cm2
(stripping Condition)
Temperature: 25 +/-5 DEG C
Humidity: 55 plus or minus 10 percent
Peeling angle: 30 degree
Stripping speed: 600 mm/min.
2. The method for evaluating a photocurable pressure-sensitive adhesive according to claim 1, wherein,
the 3 rd step is a step of determining whether the photocurable pressure-sensitive adhesive is good or not based on whether or not the work loss and the peeling force satisfy the following condition (a) and the following condition (b),
condition (a): the work loss is 1.21 N.mm or more,
condition (b): the peel force is 0.60N/25mm or less.
3. A method of manufacturing a cut die-bonded integral film, comprising:
a step of forming a photocurable pressure-sensitive adhesive layer on a base material layer, the photocurable pressure-sensitive adhesive layer being formed of a photocurable pressure-sensitive adhesive judged to be good by the method for evaluating a photocurable pressure-sensitive adhesive according to claim 1 or 2; and
and a step of forming an adhesive layer on the photocurable pressure-sensitive adhesive layer.
4. A method of manufacturing a semiconductor device, comprising:
attaching the adhesive layer of the dicing die-bonding integral film obtained by the manufacturing method according to claim 3 to a semiconductor wafer;
a step of singulating at least the semiconductor wafer and the adhesive layer by dicing;
irradiating the photocurable pressure-sensitive adhesive layer with ultraviolet rays to form a cured product of the photocurable pressure-sensitive adhesive layer;
picking up the semiconductor element to which the adhesive layer is attached from the cured product of the photocurable pressure-sensitive adhesive layer; and
and a step of bonding the semiconductor element to a support substrate for mounting a semiconductor element via the adhesive layer.
5. The manufacturing method according to claim 4,
the thickness of the semiconductor wafer is 35 μm or less.
6. The manufacturing method according to claim 4 or 5,
the cutting is suitable for invisible cutting.
7. A dicing die-bonding integrated film, comprising in order: a substrate layer; a photocurable pressure-sensitive adhesive layer formed of a photocurable pressure-sensitive adhesive judged to be good by the method for evaluating a photocurable pressure-sensitive adhesive according to claim 1 or 2; and an adhesive layer.
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