CN1132267A - Method of growing diamond film on large area of monocrystalline silicon - Google Patents
Method of growing diamond film on large area of monocrystalline silicon Download PDFInfo
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- CN1132267A CN1132267A CN 95119376 CN95119376A CN1132267A CN 1132267 A CN1132267 A CN 1132267A CN 95119376 CN95119376 CN 95119376 CN 95119376 A CN95119376 A CN 95119376A CN 1132267 A CN1132267 A CN 1132267A
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- diamond film
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- single crystal
- silicon single
- orientation
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Abstract
A method for growing large-area (100) orientational diamond film on monocrystal silicon features that monocrystal silicon substrate is ground in diamond powder to generate mars and microwave filming technique is used, where in H2, CH4 or CO is as reaction gas, system pressure is 30-45 torr, substrate temp is 870-890 deg.C and the rotation speed of substrate is 0.2-1 rpm. It has advantages such as low cost and requirement to cleavage plane of substrate, high growing speed and large growing area.
Description
The invention belongs to the preparation method of diamond film, the growth method of (100) orientation diamond film on particularly a kind of silicon single crystal.
(100) Qu Xiang diamond film is meant that the crystal grain in the diamond film manifests foursquare (100) face.This diamond film is because interior the arranging of diamond crystals of film has certain order, make that crystal boundary density and defect concentration in the diamond film are very low, so this diamond film that makes has characteristics such as thermal conductivity height, specific conductivity is low, impurity is few, more, help diamond film in the application of making aspects such as high-reliability electronic device and optical window near the level of natural diamond monocrystalline.
With the growth method of the most approaching (100) of the present invention orientation diamond film be one piece of document, exercise question is " the diamond heteroepitaxial growth on (100) Si " (Heteroepitaxialdiamond growth on (100) silicon), carry " Diamond and RelatedMaterials, 2 (1993) 1112～1113.Its main processes is: the silicon single-crystal of selecting (100) for use is a substrate, its surface finish or do not handle; Form the transition layer of SiC at substrate surface; Adopt microwave preparation diamond film technology, on substrate, apply positive bias, realize the oriented growth of (100) diamond film.In preparation process, with H
2(flow 500ml/min), CH
4(flow 2～5ml/min) is a reactant gases, control pressure 15～20tarr, 700～900 ℃ of underlayer temperatures, add positive bias current density be 0.5～1A/cm
2Use the SiC transition layer, add the positive bias method and realize the diamond film oriented growth, technological process is many, required equipment complexity, and must adopt (100) silicon substrate to grow diamond film that (100) be orientated.Prepared diamond film influenced growth area (having only Φ 5mm size), and growth velocity is low, also has influence on the homogeneity of film owing to can not form homogeneous temperature field on than big area.
The objective of the invention is to overcome the deficiencies in the prior art, under new gas atmosphere and pressure, methods such as strict controlled temperature and rotation substrate improve the quality of (100) orientation diamond film, grow area and growth velocity.
Of the present invention on silicon single crystal the growth method of big area (100) orientation diamond film, still be substrate with silicon single crystal, adopt microwave preparation diamond film technology.Of the present invention being characterized as: monocrystalline substrate can be (100) cleavage surface, also can be (111), (110) or become cleavage surface at any angle with it, and promptly be any cleavage surface.Substrate pros and cons in bortz powder grinds, and forms even cut.The method of microwave preparation diamond film comprises with H
2, CH
4With CO be reactant gases, gaseous tension is controlled at 30～45torr scope, underlayer temperature is controlled at 870～890 ℃ of scopes, and makes substrate rotation, rotating speed is controlled at 0.2～1 rev/min.
Three kinds of flow rate of reactive gas sizes should satisfy H
2: CH
4: CO=100: (0.5～1.5): gas pressure intensity 30～45torr scope in (3～6), maintenance system preferably remains between 35～40torr.Such gas concentration proportioning, can guarantee the growth of (100) orientation diamond film, and growth velocity and homogeneity are faster preferably arranged, outside such gas concentration ratio range, the orientation of diamond film, the speed of growth, homogeneity, even the purity of diamond film will be affected.
The contriver uses H
2: 100ml/min, CH
4: 1ml/min, CO:3ml/min, temperature is controlled at 880 ℃ and makes big area (Φ 35mm) (100) orientation diamond film uniformly.
The quality of diamond film also is decided by the rotating speed of substrate.Can adopt mechanical way to make the substrate uniform rotation, preferably rotating speed is controlled at 1/3～2/3 rev/min.The purpose of rotating is that to make substrate temperature evenly reach growing diamond film even, thereby obtains the diamond film of uniform crystal particles, (100) orientation that area is big.
Processing to substrate can be carried out like this: the monocrystalline silicon piece (substrate) of pressing the arbitrary face cleavage, in the bortz powder below granularity is 1 μ m positive and negative two sides is ground, suppose that every was ground 10 minutes, make that the cut of substrate surface is even, and scratch depth and width are all less than 10
-5Mm.Help the evenly growth fast of (100) orientation diamond film like this.
In sum, owing to there is CO to participate in reaction, and the proportioning of three kinds of reactant gasess, the temperature control ratio is strict, degree of orientation to diamond film plays an important role, and the control of the uniform rotation of substrate in the growth, pressure size and the milled processed of substrate also help the degree of orientation of diamond film and rapid large-area evenly to grow.
With prior art relatively, reduced growth SiC transition layer in the method for the present invention and added the positive bias technological process, not only make technology simple and also saved equipment component; The present invention is looser than prior art to the requirement of substrate cleavage surface, (100) orientation diamond film of promptly on any cleavage surface, all can growing, and this production to (100) orientation diamond film is useful and suitable; Because adopt technological process of the present invention, the diamond film degree of orientation that is obtained is good, can be with the speed of 3～5 μ m/h, the above diamond film of growth Φ 30mm.
Claims (3)
1, a kind of on silicon single crystal the growth method of big area (100) orientation diamond film, be substrate with silicon single crystal, with H
2, CH
4Be reactant gases, adopt microwave preparation diamond film technology, preparation (100) orientation diamond film the invention is characterized in that monocrystalline substrate is any cleavage surface, and tow sides grind the even cut of formation in bortz powder; Reactant gases also includes CO in preparation; Underlayer temperature is controlled at 870～890 ℃ of scopes, and pressure-controlling is in 30～45torr scope, and substrate rotates, and rotating speed is controlled at 0.2～1 rev/min.
2, according to claim 1 described on silicon single crystal the growth method of big area (100) orientation diamond film, it is characterized in that three kinds of flow rate of reactive gas sizes satisfy H
2: CH
4: CO=100: (0.5～1.5): (3～6), and the interior gaseous tension of maintenance system is between 35～40torr.
3, according to claim 1 or 2 described on silicon single crystal the growth method of big area (100) orientation diamond film, it is characterized in that said the even cut width that forms and the degree of depth being ground all less than 10 in the monocrystalline substrate two sides
-5Mm, employed bortz powder granularity is below the 1 μ m; The rotation rotating speed of monocrystalline substrate evenly size is 1/3-2/3 rev/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95119376A CN1039595C (en) | 1995-12-12 | 1995-12-12 | Method of growing diamond film on large area of monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95119376A CN1039595C (en) | 1995-12-12 | 1995-12-12 | Method of growing diamond film on large area of monocrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1132267A true CN1132267A (en) | 1996-10-02 |
| CN1039595C CN1039595C (en) | 1998-08-26 |
Family
ID=5081981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95119376A Expired - Fee Related CN1039595C (en) | 1995-12-12 | 1995-12-12 | Method of growing diamond film on large area of monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1039595C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109537051A (en) * | 2018-11-27 | 2019-03-29 | 西安碳星半导体科技有限公司 | A kind of method of high-speed growth single-crystal diamond |
| CN110605794A (en) * | 2019-07-29 | 2019-12-24 | 泰州隆基乐叶光伏科技有限公司 | Battery piece production method, battery piece and battery assembly |
| CN112030133A (en) * | 2020-11-06 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | Diamond and preparation method and application thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01317198A (en) * | 1988-03-22 | 1989-12-21 | Idemitsu Petrochem Co Ltd | Method for synthesizing diamond or the like |
| DE4233085C2 (en) * | 1992-10-01 | 1996-10-10 | Fraunhofer Ges Forschung | Process for producing heteroepitaxial diamond layers |
-
1995
- 1995-12-12 CN CN95119376A patent/CN1039595C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109537051A (en) * | 2018-11-27 | 2019-03-29 | 西安碳星半导体科技有限公司 | A kind of method of high-speed growth single-crystal diamond |
| CN110605794A (en) * | 2019-07-29 | 2019-12-24 | 泰州隆基乐叶光伏科技有限公司 | Battery piece production method, battery piece and battery assembly |
| CN110605794B (en) * | 2019-07-29 | 2022-04-19 | 泰州隆基乐叶光伏科技有限公司 | Battery piece production method, battery piece and battery assembly |
| CN112030133A (en) * | 2020-11-06 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | Diamond and preparation method and application thereof |
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| Publication number | Publication date |
|---|---|
| CN1039595C (en) | 1998-08-26 |
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