CN113225887B - Telescopic cold and hot probe assembly, plasma diagnosis system and diagnosis method - Google Patents
Telescopic cold and hot probe assembly, plasma diagnosis system and diagnosis method Download PDFInfo
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- CN113225887B CN113225887B CN202110512622.2A CN202110512622A CN113225887B CN 113225887 B CN113225887 B CN 113225887B CN 202110512622 A CN202110512622 A CN 202110512622A CN 113225887 B CN113225887 B CN 113225887B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0068—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by thermal means
- H05H1/0075—Langmuir probes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
The invention discloses a telescopic cold and hot probe assembly, a plasma diagnosis system and a diagnosis method, which comprise the following steps: a co-axially mounted cold probe assembly and a heat probe assembly; the cold probe assembly comprises an insulating sleeve and a spherical probe arranged at the tail end of the insulating sleeve; a slit with a set size is arranged on the spherical probe; the heat probe assembly is arranged inside the insulating sleeve and comprises a heat probe filament, the heat probe filament is connected with the telescopic piece through an insulating support, and the telescopic piece can enable the heat probe filament to extend out of the insulating sleeve or retract into the insulating sleeve from the slit. The plasma space potential is obtained by a zero emission limit inflection point potential method of the emission probe, and the emission probe technology is more reliable than a single probe technology in the aspect of plasma space potential measurement.
Description
Technical Field
The invention belongs to the technical field of plasmas, and particularly relates to a telescopic cold and hot probe assembly, a plasma diagnosis system and a diagnosis method.
Background
Langmuir single probe technology and emission probe technology are both commonly used plasma diagnostic tools. In the single-probe diagnosis of the plasma, firstly, a metal electrode is inserted into the plasma as a probe, scanning bias voltage is added between the probe and a plasma grounding electrode, then the change of probe current along with the scanning bias voltage is measured to obtain an I-V characteristic curve of the single probe, and finally parameters such as space potential, electron density, electron temperature, electron energy distribution function and the like of the plasma are obtained by analyzing the volt-ampere characteristic curve. According to the classical langmuir probe theory, the first-order leading peak potential (i.e. the inflection point potential of the voltammetry characteristic curve) of the single-probe I-V characteristic curve is the plasma space potential, and the probe collection current corresponding to the potential is the electron saturation collection current, so that the inflection point potential is used as a reference point to obtain other parameters such as the electron density, the electron temperature, the electron energy distribution function and the like of the plasma.
However, in practice, the inflection point of the voltammetry characteristic curve of a single probe is very susceptible to the deposition of contaminants on the surface of the probe, the adsorption of gas molecules on the surface of the probe, the space charge effect of the plasma, and other factors, so that the inflection point potential deviates from the actual space potential of the plasma, and finally, parameters such as the electron density, the electron temperature, the electron energy distribution function, and the like of the plasma calculated by taking the inflection point potential as a reference point have large uncertainties. In addition, the suspended sheath layer existing on the insulating support connected with the metal probe can shield the metal probe to a certain extent, namely, a so-called terminal effect is formed, so that the electron collecting current of the probe is influenced, the effective current collecting area cannot be accurately determined, and finally the calculated plasma electron density is inaccurate.
On the other hand, in the emission probe diagnosis of the plasma, a small segment of metal is inserted into the plasma as an emission probe, the emission probe is heated by an external power supply until thermionic emission is generated, and a scanning bias voltage is applied to the emission probe at the same time, so that an I-V characteristic curve of the emission probe is obtained. By changing the heating current of the emission probe, an I-V characteristic curve in different thermionic emission states and the inflection point potential of the I-V characteristic curve are obtained. The inflection point potentials of the emission probes and the probe heating current are plotted, linear fitting is carried out on the inflection point potentials and the inflection point potentials are extrapolated to the beginning of thermionic emission, and the obtained zero emission limit inflection point potential can effectively avoid the influence of the space charge effect of plasma on the plasma space potential measurement result, and the method is also called as an emission probe zero emission limit inflection point potential method. In addition, in the emission probe diagnosis of plasma, the probe needs to be heated to keep a higher temperature, so the emission probe is superior to other electrostatic probe diagnosis technologies in the aspects of desorption of the probe surface and keeping the probe surface clean. Although the transmitting probe has unique advantages in accurately measuring the plasma space potential, only one parameter of the plasma space potential can be accurately obtained by using the transmitting probe. In the I-V characteristic of the emission probe, the presence of the electron emission current can significantly change the shape of the I-V characteristic, resulting in deviations from the actual results in parameters such as plasma electron density, electron temperature, and electron energy distribution function as calculated by classical langmuir probe theory.
Disclosure of Invention
The invention provides a telescopic cold and hot probe assembly, a plasma diagnosis system and a diagnosis method, which are used for solving the problems of probe surface pollution, plasma space charge effect, probe support terminal effect and the like in the process of measuring plasma by using the existing Langmuir single probe, and finally obtaining accurate parameters such as plasma space potential, electron temperature, electron density, electron energy distribution function and the like.
In some embodiments, the following technical scheme is adopted:
a telescoping cold and hot probe assembly comprising: a co-axially mounted cold probe assembly and a heat probe assembly; the cold probe assembly comprises an insulating sleeve and a spherical probe arranged at the tail end of the insulating sleeve; a slit with a set size is arranged on the spherical probe;
the heat probe assembly is arranged inside the insulating sleeve and comprises a heat probe filament, the heat probe filament is connected with the telescopic piece through an insulating support, and the telescopic piece can enable the heat probe filament to extend out of the insulating sleeve or retract into the insulating sleeve from the slit.
Further, a metal baffle is arranged on the inner side of the spherical shell of the spherical probe and can move along the inner side of the spherical shell under the control of the controller so as to shield or open the slit.
Further, the diameter of the spherical shell of the spherical probe is larger than that of the cold probe insulating sleeve.
Furthermore, the joint of the two ends of the filament of the heat probe and the insulating bracket is subjected to packaging treatment of high-temperature conductive adhesive.
Further, the inner side of the spherical probe is connected with a cold probe metal wire, and the cold probe metal wire penetrates through the insulating sleeve to be connected with an external circuit.
Furthermore, two ends of the hot probe filament are respectively fixed on two metal leads, and the metal leads penetrate through the insulating support to be connected with an external circuit.
Further, when the heat probe assembly is retracted into the cold probe insulating sleeve, the heat probe filament is positioned near the cold probe spherical shell, and the heat probe filament is kept in an insulating state with the cold probe; when the heat probe assembly extends out of the cold probe spherical shell, the heat probe filament is positioned near the cold probe spherical shell, and meanwhile, the heat probe filament is prevented from sinking into a sheath layer near the cold probe spherical shell.
In other embodiments, the following technical solutions are adopted:
a plasma diagnostic system, comprising: in the telescopic cold and hot probe assembly, the telescopic cold and hot probe assembly is respectively connected with the hot probe heating circuit and the probe scanning bias voltage circuit through metal wires; the heat probe heating circuit applies heating current to the heat probe filament by utilizing an external power supply; the probe scanning bias voltage circuit applies scanning bias voltage between the cold probe spherical shell and the plasma grounding electrode and between the hot probe filament and the plasma grounding electrode respectively to obtain current signals of the cold probe spherical shell and the hot probe filament changing along with the scanning bias voltage, and obtain I-V characteristic curves of the cold probe and the hot probe respectively.
In other embodiments, the following technical solutions are adopted:
a plasma diagnostic method comprising:
extending the hot probe out of the hemispherical cold probe, applying heating current to the hot probe, and applying scanning bias voltage between a filament of the hot probe and a plasma grounding electrode to obtain an I-V characteristic curve of the hot probe;
changing the heating current of the thermal probe to obtain I-V characteristic curves of the thermal probe in different heating states; obtaining the space potential of the plasma based on the inflection point potential and the electron emission current of each I-V characteristic curve;
retracting the hot probe into the cold probe insulating sleeve, shielding the slit, and applying a set heating current to the hot probe to heat and bake the cold probe spherical shell; applying a scanning bias voltage between the cold probe and the plasma grounding electrode to obtain an I-V characteristic curve of the cold probe;
and respectively calculating plasma electron temperature, plasma electron density and electron energy distribution function by taking the space potential of the plasma as the reference point of the I-V characteristic curve of the cold probe.
Further, reading out the current corresponding to the plasma space potential from the I-V characteristic curve of the cold probe to obtain the saturated electron collecting current of the cold probe;
logarithm is obtained on the current signal of the I-V characteristic curve transition region of the cold probe, and the plasma electron temperature is obtained through calculation; calculating plasma electron density based on the plasma electron temperature;
and (4) carrying out secondary differentiation on the current signal of the I-V characteristic curve transition region of the cold probe, and calculating to obtain an electron energy distribution function.
The invention has the beneficial effects that:
1. the plasma space potential is obtained by a zero emission limit inflection point potential method of the emission probe, and the emission probe technology is more reliable than a single probe technology in the aspect of plasma space potential measurement.
2. The cold probe is subjected to heating treatment of the emission probe at all times in the process of acquiring the I-V characteristic curve, so that no gas molecules are adsorbed on the surface of the cold probe, and the surface of the cold probe is prevented from being deposited by pollutants, so that the reliability of the I-V characteristic curve of the cold probe is ensured;
3. according to the invention, accurate plasma space potential is taken as a reference point of an I-V characteristic curve of the cold probe, and more accurate plasma electron temperature, electron density and electron energy distribution function are calculated;
4. the electronic acquisition end of the cold probe adopts a design scheme of a hemispherical thin spherical shell, and the diameter of the spherical shell is larger than that of the cold probe insulating sleeve, so that the shielding of a suspended sheath layer on the insulating sleeve on the electronic acquisition end of the cold probe can be avoided, the cold probe has an accurate electronic acquisition area, and the electronic density of plasma can be accurately calculated;
5. the connection parts of the two ends of the filament of the thermal probe and the insulating supports are all packaged by high-temperature conductive adhesive, so that the filament can be prevented from being completely sunk into the suspended sheath layers on the two insulating supports, and the accuracy of the thermal probe on the plasma space potential measurement result is ensured.
Drawings
FIG. 1 is a schematic view of an integrated retractable hot and cold probe assembly according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a thermal probe according to an embodiment of the present invention;
FIG. 3 is an electrical schematic of the plasma diagnostics using a hot and cold probe according to an embodiment of the present invention;
FIG. 4 is a measurement of plasma space potential using a thermal probe according to an embodiment of the present invention;
FIG. 5 is a graph of the I-V characteristics of a plasma obtained using a cold probe according to an embodiment of the present invention.
In the figure: 1, a cold probe; 2, a movable metal baffle; 3 a control valve; 4, insulating a bracket; 5 a hot probe filament; 6, a thermal probe retractor; 7, insulating sleeve; 8 thermal probe metal wire; 9 operating rod; 10 a cold probe metal wire; 11, high-temperature resistant conductive adhesive; 12 plasma body; 13 combining an integrated cold and hot probe; 14 a plasma ground electrode; 15 thermal probe heating circuit; 16 heating circuit load resistance; and 17, a probe scanning bias voltage circuit.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
Example one
In one or more embodiments, a telescoping cold and hot probe assembly is disclosed, with reference to fig. 1-2, comprising: a co-axially mounted cold probe assembly and a heat probe assembly; the cold probe assembly comprises an insulating sleeve and a spherical probe arranged at the tail end of the insulating sleeve; the spherical probe is provided with a slit with a set size; the heat probe assembly is arranged inside the insulating sleeve and comprises a heat probe filament, the heat probe filament is connected with the telescopic piece through an insulating support, and the telescopic piece can enable the heat probe filament to extend out of the insulating sleeve or retract into the insulating sleeve from the slit.
Specifically, the cold probe assembly includes a cold probe 1, a metal baffle 2, a control valve 3, an insulating sleeve 7, and a cold probe metal wire 10. The cold probe 1 is in a hemispherical thin shell shape and is made of stainless steel; a slit with a set size is reserved in the center of the spherical shell of the cold probe; the metal baffle 2 is an arc-shaped metal sheet and is made of the same material as the cold probe 1; the surface area of the metal baffle is not smaller than the area of the slit, and the metal baffle is attached to the inner side of the spherical shell and is controlled by the controller to move along the inner side of the spherical shell; the control valve is columnar and is made of stainless steel. The metal baffle can completely shield the slit or completely open the slit under the control of the controller; specifically, referring to fig. 1, the controller of the metal baffle 2 may be a metal wire or a spring, two ends of the metal wire or the spring are respectively fixed to two ends of the metal baffle 2, a middle position of the metal wire or the spring is fixed to the control valve 3, the control valve is made of a high temperature-resistant insulating material, a groove or a hook-shaped design is designed on the control valve 3 for fixing the controller metal wire, and the control valve 3 is fixed to the metal operating rod 9. Under the natural state, the metal baffle 2 is in a state of shielding a slit of the spherical probe, when the slit needs to be opened, the operating rod 9 is pulled outwards, the control valve 3 is far away from the metal spherical shell, and meanwhile, the metal baffle 2 is dragged to move through the controller metal wire until the slit is completely opened.
The insulating sleeve 7 is a hollow glass tube, and the cold probe metal wire 10 and the heat probe assembly are arranged inside the insulating sleeve 7. The inner side of the cold probe spherical shell is covered at the tail end of the insulating sleeve 7, and the cold probe spherical shell and the insulating sleeve are fixedly connected through high-temperature glue; the inner side of the spherical shell of the cold probe 1 is connected with a cold probe metal lead wire 10, and the cold probe metal lead wire 10 penetrates through the insulating sleeve 7 to be connected with an external circuit.
In this embodiment, the design of hemisphere thin spherical shell is adopted to cold probe electron collection end, and the spherical shell diameter is greater than cold probe insulation support's diameter, can avoid the suspension sheath layer on the insulation support to the sheltering from of cold probe electron collection end like this, makes the cold probe have accurate electron and collects the area to can accurately calculate the electron density of plasma.
The heat probe assembly includes an insulating support 4, a heat probe filament 5, a heat probe retractor 6, and a heat probe wire 8. The hot probe filament 5 is a tungsten filament, the insulating support 4 is two ceramic tubes, and the hot probe expansion piece 6 is a stainless steel corrugated tube, so that the expansion of a set length can be realized; the two ends of the heat probe filament 5 are connected with heat probe metal wires 8, and the heat probe metal wires 8 penetrate through the insulating support 4 to be connected with an external heating circuit.
The heat probe assembly after the installation is respectively packaged at two ends of the filament by using high-temperature conductive adhesive 11, so that the filament is prevented from being completely sunk into the suspended sheath layers on the two insulating supports.
Referring to fig. 2, two ends of a heat probe filament 5 are respectively fixed on two heat probe metal wires 8 in a winding and folding manner; and the heat probe assembly after the installation is finished respectively carries out the packaging treatment of high-temperature conductive adhesive at two ends of the filament, so that the filament is prevented from being completely sunk into the suspended sheath layers on the two insulating supports.
In this embodiment, cold probe subassembly and hot probe subassembly constitute integrative telescopic cold and hot probe combination, and the hot probe subassembly is installed inside the cold probe subassembly, and the hot probe filament can be in different positions inside and outside the cold probe spherical shell through removing.
The hot probe can be in a state of being retracted into the cold probe insulating sleeve and in a state of being extended out of the cold probe assembly; when the hot probe retracts into the cold probe insulating sleeve, the filament of the hot probe is positioned near the spherical shell of the cold probe, and the filament of the hot probe is kept in an insulating state with the cold probe; when the hot probe extends out of the cold probe spherical shell, the hot probe filament is located near the cold probe spherical shell, and meanwhile, the hot probe filament is required to be prevented from sinking into a sheath layer near the cold probe spherical shell.
Example two
In one or more embodiments, a plasma diagnostic system is disclosed, with reference to fig. 3, comprising: in the telescopic cold and hot probe assembly of the first embodiment,
the telescopic cold and hot probe assembly is respectively connected with the hot probe heating circuit and the probe scanning bias voltage circuit through metal wires; the heat probe heating circuit applies heating current to the heat probe filament by utilizing an external power supply; the probe scanning bias voltage circuit applies scanning bias voltage between the cold probe spherical shell and the plasma grounding electrode and between the hot probe filament and the plasma grounding electrode respectively, and current signals of the cold probe spherical shell and the hot probe filament changing along with the scanning bias voltage are measured respectively to obtain I-V characteristic curves of the cold probe and the hot probe respectively.
EXAMPLE III
In one or more embodiments, a plasma diagnostic method is disclosed, which specifically includes the following processes:
(1) when the cold and hot probe device is used for diagnosing the plasma, the integrated telescopic cold and hot probe combination is placed in the plasma;
(2) extending the thermal probe out of the hemispherical cold probe through a thermal probe expansion piece, applying heating current to the thermal probe through two metal leads of the thermal probe by using an external power supply, and simultaneously applying scanning bias voltage between a filament of the thermal probe and a plasma grounding electrode to obtain an I-V characteristic curve of the thermal probe;
(3) changing the heating current of the thermal probe to obtain I-V characteristic curves of the thermal probe in different heating states;
(4) the inflection point potential (i.e., first derivative peak potential) and the electron emission current of each I-V characteristic curve are obtained and plotted with the heating current to obtain the heating current I at the start of the electron emission currentht-0emtWhile linearly fitting the relationship between the knee potential and the heating current and extrapolating to Iht-0emtThe obtained inflection point potential in zero emitter time is the space potential V of the plasmap;
(5) The thermal probe is retracted into the cold probe insulating sleeve through the thermal probe expansion piece, the metal baffle is pushed by the control valve to cover the slit on the cold probe spherical shell, and an external power supply applies a voltage less than I to the thermal probeht-0emtThe heating current heats and bakes the spherical shell of the cold probe, and simultaneously, scanning bias voltage is applied between the cold probe and the plasma grounding electrode through the metal lead of the cold probe to obtain an I-V characteristic curve of the cold probe;
(6) reading out the plasma space potential V from the I-V characteristic curve of the cold probepThe corresponding current, which is the saturated electron collecting current I of the cold probeesThe logarithm of the current signal in the transition region of the I-V characteristic curve of the cold probe is calculated by using a formulaCalculating to obtain the electron temperature T of the plasmaeThen using the formulaCalculating to obtain the electron density n of the plasmaeIn the above formula, e, meAnd VBRespectively representing element charge, electron mass and probe bias voltage, and S is the surface area of the cold probe spherical shell; the current signal of the cold probe I-V characteristic curve transition region is subjected to secondary differentiation by using a formulaCalculating to obtain an electron energy distribution function ge(V), wherein V ═ Vp-VB。
The plasma space potential is obtained by a zero emission limit inflection point potential method of the emission probe, and the emission probe technology is more reliable than a single probe technology in the aspect of plasma space potential measurement;
the cold probe is subjected to heating treatment of the emission probe at all times in the process of collecting the I-V characteristic curve, so that no gas molecules are adsorbed on the surface of the cold probe, and the surface of the cold probe is prevented from being deposited by pollutants, so that the reliability of the I-V characteristic curve of the cold probe is ensured;
and (3) taking the accurate plasma space potential as a reference point of the I-V characteristic curve of the cold probe, and further calculating to obtain more accurate plasma electron temperature, electron density and electron energy distribution functions.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.
Claims (7)
1. A telescoping cold and hot probe assembly, comprising: a co-axially mounted cold probe assembly and a heat probe assembly; the cold probe assembly comprises an insulating sleeve and a spherical probe arranged at the tail end of the insulating sleeve; a slit with a set size is arranged on the spherical probe; the metal baffle is arranged on the inner side of the spherical shell of the spherical probe and can move along the inner side of the spherical shell under the control of the controller so as to shield or open the slit; the diameter of the spherical shell of the spherical probe is larger than that of the cold probe insulating sleeve;
the heat probe assembly is arranged inside the insulating sleeve and comprises a heat probe filament, the heat probe filament is connected with an extensible member through an insulating support, and the extensible member can enable the heat probe filament to extend out of the insulating sleeve or retract into the insulating sleeve from the slit; when the heat probe assembly retracts into the cold probe insulating sleeve, the filament of the heat probe is positioned near the spherical shell of the cold probe, and the filament of the heat probe is kept in an insulating state with the cold probe; when the heat probe assembly extends out of the cold probe spherical shell, the heat probe filament is positioned near the cold probe spherical shell, and meanwhile, the heat probe filament is prevented from sinking into a sheath layer near the cold probe spherical shell;
the telescopic cold and hot probe assembly is respectively connected with the hot probe heating circuit and the probe scanning bias voltage circuit through metal wires; the heat probe heating circuit applies heating current to the heat probe filament by utilizing an external power supply; the probe scanning bias voltage circuit applies scanning bias voltage between the cold probe spherical shell and the plasma grounding electrode and between the hot probe filament and the plasma grounding electrode respectively to obtain current signals of the cold probe spherical shell and the hot probe filament changing along with the scanning bias voltage, and obtain I-V characteristic curves of the cold probe and the hot probe respectively.
2. The retractable cooling and heating probe assembly of claim 1, wherein the junction between the two ends of the filament of the heating probe and the insulating support is encapsulated with high temperature conductive adhesive.
3. The retractable cold and hot probe assembly as claimed in claim 1, wherein said spherical probe is connected to a cold probe wire inside, said cold probe wire passing through said insulating sleeve and being connected to an external circuit.
4. The retractable cold and hot probe assembly as claimed in claim 1, wherein the hot probe filament is fixed at two ends to two metal wires, and the metal wires are connected to the external circuit by passing through the insulating support.
5. A plasma diagnostic system, comprising: the retractable cold-hot probe assembly of any of claims 1-4, which is connected to the hot probe heating circuit and the probe scan bias voltage circuit, respectively, by metal wires; the heat probe heating circuit applies heating current to the heat probe filament by utilizing an external power supply; the probe scanning bias voltage circuit applies scanning bias voltage between the cold probe spherical shell and the plasma grounding electrode and between the hot probe filament and the plasma grounding electrode respectively to obtain current signals of the cold probe spherical shell and the hot probe filament changing along with the scanning bias voltage, and obtain I-V characteristic curves of the cold probe and the hot probe respectively.
6. The method of claim 5, comprising:
extending the thermal probe out of the hemispherical cold probe, applying a heating current to the thermal probe, and applying a scanning bias voltage between a filament of the thermal probe and a plasma grounding electrode to obtain an I-V characteristic curve of the thermal probe;
changing the heating current of the thermal probe to obtain I-V characteristic curves of the thermal probe in different heating states; obtaining the space potential of the plasma based on the inflection point potential and the electron emission current of each I-V characteristic curve;
retracting the hot probe into the cold probe insulating sleeve, shielding the slit, and applying a set heating current to the hot probe to heat and bake the cold probe spherical shell; applying a scanning bias voltage between the cold probe and the plasma grounding electrode to obtain an I-V characteristic curve of the cold probe;
and respectively calculating plasma electron temperature, plasma electron density and electron energy distribution function by taking the space potential of the plasma as the reference point of the I-V characteristic curve of the cold probe.
7. The plasma diagnostic method of claim 6, wherein the current corresponding to the space potential of the plasma is read from the I-V characteristic curve of the cold probe to obtain the saturated electron collecting current of the cold probe;
logarithm is obtained on the current signal of the I-V characteristic curve transition region of the cold probe, and the plasma electron temperature is obtained through calculation; calculating plasma electron density based on the plasma electron temperature;
and (4) carrying out secondary differentiation on the current signal of the I-V characteristic curve transition region of the cold probe, and calculating to obtain an electron energy distribution function.
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