CN113224946A - Temperature control method and device and direct-current boost circuit - Google Patents
Temperature control method and device and direct-current boost circuit Download PDFInfo
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- CN113224946A CN113224946A CN202110522081.1A CN202110522081A CN113224946A CN 113224946 A CN113224946 A CN 113224946A CN 202110522081 A CN202110522081 A CN 202110522081A CN 113224946 A CN113224946 A CN 113224946A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1563—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators without using an external clock
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/047—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a temperature responsive switch
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a temperature control method, which comprises the following steps: detecting the temperature of a power system control chip through a temperature detection circuit to obtain temperature data; according to the temperature data, under the condition that the temperature rises within the preset time and the temperature in the power supply system is greater than a first threshold value, controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal; and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range so as to enable the temperature of the power supply system control chip to be within the preset range. The invention also provides a temperature control device and a direct current booster circuit. The invention can effectively control the temperature of the direct current booster circuit in the power supply system, and has higher stability; the problem of the electronic component damage that temperature lag arouses in the direct current boost circuit in the power supply system that prior art exists is solved.
Description
Technical Field
The invention relates to the technical field of power supply systems, in particular to a temperature control method and device and a direct-current booster circuit.
Background
In power supply systems, dc boost circuits are commonly used to convert a low voltage to a high output voltage in a power supply system for use by electronic devices. A boost chopper circuit is a relatively common dc boost circuit. In the conventional technology, the boost control is realized by integrating a boost chopper circuit through a control chip (IC) to perform voltage and current closed-loop control. Along with the increase of the functional integration of the chip, the chip can generate a large amount of heat in the working process, and the function and the service life of electronic components such as the chip can be reduced due to the large amount of heat.
In order to prevent electronic components such as a control chip and the like from being damaged in a high-temperature environment, an over-temperature protection circuit is added in a general direct-current booster circuit. The over-temperature protection circuit detects the temperature change of the chip (or the internal temperature of the power supply system), and when the temperature is higher than a certain specific value, the over-temperature protection circuit sends a control signal to turn off the voltage output of the chip until the temperature returns to normal, and the chip starts to work again. However, the over-temperature protection mechanism in the prior art has a certain hysteresis; the delayed over-temperature protection mechanism can cause the damage of electronic components such as chips and the like.
The patent document with publication number CN 112068631 a discloses an anti-interference over-temperature protection circuit with low power consumption, which utilizes two reference voltages to set a hysteresis window for temperature detection, and can prevent the service life of the device from being affected by the over-high temperature of the chip; however, in the practical process, the above-mentioned prior temperature control technical scheme is applied to the dc boost circuit, so that the stability is low, the cost is high, the situation of untimely over-temperature control still occurs in a high-temperature environment, and the starting frequency of the over-temperature control is high. Therefore, how to effectively control the temperature of the dc boost circuit in the power supply system is a technical problem to be solved.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a temperature control method and a temperature control device, which are applied to a direct current booster circuit, can effectively control the temperature of the direct current booster circuit in a power supply system and have higher stability; the problem of the electronic component damage that temperature lag arouses in the direct current boost circuit in the power supply system that prior art exists is solved.
The technical scheme of the invention is as follows:
the invention also provides a temperature control method, which comprises the following steps: detecting the temperature of a power system control chip through a temperature detection circuit to obtain temperature data; according to the temperature data, under the condition that the temperature rises within the preset time and the temperature in the power supply system is greater than a first threshold value, controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal; and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range so as to enable the temperature of the power supply system control chip to be within the preset range.
Further, reconfiguring the PWM signal includes: the working mode of the timer is configured to be a continuous increase and decrease working mode, and the counting period is N times of the carrier period; configuring the value of the register and setting the counter to be automatically counted; under the condition that the value of the register is equal to the value of the counter, outputting a path of PWM wave; the method is a method for reconfiguring the PWM signals, and the on-off of a switching tube in the boost chopper circuit is controlled by adjusting the duty ratio and the pulse period or width of the PWM waves, so that the required output voltage with the amplitude can be obtained again, and the dynamic adjustment of the output voltage and the wider voltage stabilization range are realized; the heat generated by the control chip can be effectively adjusted by adjusting the output voltage of the control chip; when the power supply system is in a high-temperature environment, the heat newly generated by the control chip can be effectively reduced by adjusting the working frequency of a switching tube in the boost chopper circuit, and the temperature of the control chip is kept within a preset temperature range for a long time; meanwhile, in the subsequent working process, the frequency of opening or closing the temperature control switch can be effectively reduced.
Further, according to the temperature decline range, before adjusting the operating condition of temperature detect switch, still include: acquiring a corresponding data set between the output voltage and the temperature of a control chip of the power system, and finding out a thermal hysteresis window appearing in the output voltage; according to the thermal hysteresis window information, obtaining the temperature for controlling the chip in the power system to be switched off and the temperature information for switching on, and calculating the temperature hysteresis; the method is used for obtaining the temperature hysteresis amount, and the accuracy and the obtaining reliability of the temperature hysteresis amount can be effectively improved by adopting the method.
Further, finding a thermal hysteresis window for the output voltage to appear comprises: under the condition of temperature rise, acquiring a first temperature when the output voltage drop rate is greater than a first preset rate and a second temperature when the output voltage drops to zero; under the condition of temperature rise, acquiring a third temperature when the rising rate of the output voltage is greater than a second preset rate and a fourth temperature when the output voltage is stably output; the temperature information between the first temperature and the fourth temperature is thermal hysteresis window information.
Furthermore, the temperature for controlling the chip to be turned off in the power supply system is the first temperature, and the temperature for controlling the chip to be turned on in the power supply system is the third temperature.
Further, according to the temperature decline range, adjust the operating condition of temperature detect switch, including: and controlling the temperature control switch to be in a closed state if the falling amplitude of the power supply temperature exceeds the temperature hysteresis amount within the preset time, otherwise controlling the temperature control switch to be in an open state.
According to the temperature control method, the temperature data of the temperature detection circuit for detecting the temperature of the power supply system control chip is obtained, and then the temperature control switch is controlled to be in a disconnected state and the PWM signal is reconfigured under the condition that the temperature is increased within the preset time and the temperature in the power supply system is greater than a first threshold value; and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range to enable the internal temperature of the power supply system to be within a preset range, effectively adjusting the temperature of an internal module of the power supply system, and preventing the service life of a device from being influenced by the overhigh temperature of the chip in the power supply system.
The present invention also provides a temperature control device, comprising:
the acquisition unit is used for detecting the temperature of the control chip of the direct current booster circuit through the temperature detection circuit to acquire temperature data;
the control unit is used for controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal under the condition that the temperature is judged to rise within the preset time and the temperature in the power supply system is larger than a first threshold value according to the temperature data; and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range so as to enable the temperature of the power supply system control chip to be within the preset range.
Further, the device also comprises a configuration unit, which is used for configuring the working mode of the timer as a continuous increase and decrease working mode, and the counting period is N times the carrier period; configuring the value of the register and setting the counter to be automatically counted; and under the condition that the value of the register is equal to the value of the counter, outputting one path of PWM wave.
Further, the apparatus further comprises: the searching unit is used for acquiring a corresponding data set between the output voltage and the temperature of the power system control chip and searching a thermal hysteresis window appearing in the output voltage; and the calculating unit is used for obtaining the temperature for controlling the chip to be switched off and the temperature for controlling the chip to be switched on in the power supply system according to the thermal hysteresis window information and calculating the temperature hysteresis quantity.
Further, the control unit includes: the first control subunit controls the temperature control switch to be in a closed state when the power supply temperature drop amplitude exceeds the temperature hysteresis amount within the preset time; and the second control subunit controls the temperature controlled switch to be in a disconnected state if the falling amplitude of the output voltage value in the preset time is less than or equal to the temperature hysteresis quantity.
The invention has the beneficial effects that:
1. according to the invention, under the condition that the temperature is increased within the preset time and the temperature in the power supply system is greater than the first threshold value, the PWM signal is reconfigured, the working frequency of a switching tube in the boost chopper circuit is adjusted, the output voltage of the control chip is controlled, and the heat generated by the control chip is effectively reduced;
2. according to the invention, the temperature for controlling the chip to be turned off and the temperature information for controlling the chip to be turned on in the power supply system are obtained according to the thermal hysteresis window appearing in the output voltage, so that the calculated temperature hysteresis quantity has higher accuracy.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of a temperature control method according to an embodiment of the present invention;
fig. 2 is a schematic connection diagram of a temperature control device according to an embodiment of the present invention.
Detailed Description
The embodiments of the invention will be described in detail below with reference to the drawings, but the invention can be implemented in many different ways as defined and covered by the claims.
As shown in fig. 1, an embodiment of the present invention provides a temperature control method, including the following steps:
s101: detecting the temperature of a power system control chip through a temperature detection circuit to obtain temperature data;
s102: according to the temperature data, under the condition that the temperature rises within the preset time and the temperature in the power supply system is greater than a first threshold value, controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal;
s103: and under the condition that the temperature of the power supply system control chip is reduced within the preset time, if the reduction amplitude of the power supply temperature exceeds the temperature hysteresis amount within the preset time, controlling the temperature controlled switch to be in a closed state, otherwise, controlling the temperature controlled switch to be in an open state.
In step S102, reconfiguring the PWM signal includes:
s10201: the working mode of the timer is configured to be a continuous increase and decrease working mode, and the counting period is N times of the carrier period;
s10202: configuring the value of the register and setting the counter to be automatically counted;
s10203: and under the condition that the value of the register is equal to the value of the counter, outputting one path of PWM wave.
In the above steps, the obtaining of the temperature hysteresis amount in S103 occurs before S101, and specifically includes the following steps:
s10301: acquiring a corresponding data set between the output voltage and the temperature of the power system chip, and finding out a thermal hysteresis window appearing in the output voltage; finding a thermal hysteresis window for the presence of the output voltage, comprising: under the condition of temperature rise, acquiring a first temperature when the output voltage drop rate is greater than a first preset rate and a second temperature when the output voltage drops to zero; under the condition of temperature rise, acquiring a third temperature when the rising rate of the output voltage is greater than a second preset rate and a fourth temperature when the output voltage is stably output; the region information between the first temperature, the second temperature, the third temperature, and the fourth temperature is thermal hysteresis window information.
In this embodiment, through the data set, the power system chip is in a stable output voltage state at 0 to 160 degrees, and as the temperature of the chip increases, because the over-temperature protection circuit sends a control signal and disconnects the voltage output of the chip, the output voltage will decrease slowly after 160 to 168 degrees and decrease rapidly to a zero output state between 168 to 172 degrees, and the decrease rate is greater than a first preset rate, at this time, 168 degrees can be set as a first temperature, and the second temperature is 172 degrees; when the temperature is reduced, the over-temperature protection circuit sends out a control signal and closes the temperature control switch again to keep the voltage output of the chip; when the temperature is reduced to 153 ℃, the output voltage slowly rises and quickly returns to a stable output state when the temperature is reduced to 147 ℃, the rising rate is greater than a preset rate, the 147 ℃ can be set as a third temperature, the temperature in the stable output state is 145 ℃, and the 145 ℃ can be defined as a fourth temperature; the temperature information between the first to fourth temperatures is thermal hysteresis window information.
S10302: according to the thermal hysteresis window information, obtaining the temperature for controlling the chip in the power system to be switched off and the temperature information for switching on, and calculating the temperature hysteresis; the temperature for controlling the turn-off of the chip in the power supply system is a first temperature, and the temperature for controlling the turn-on of the chip in the power supply system is a third temperature.
In this embodiment, the first temperature is 168 degrees, the third temperature is 147 degrees, the temperature hysteresis amount is a difference between the first temperature and the third temperature, and the temperature hysteresis amount is 21 degrees.
By acquiring the temperature of the control chip, under the condition that the temperature rises within the preset time and the temperature in the power supply system is greater than the first threshold value, the temperature controlled switch is controlled to be in an off state and the PWM signal is reconfigured, under the condition that the temperature of the power system control chip is judged to be reduced within the preset time, the reduction amplitude of the power temperature exceeds the temperature hysteresis quantity within the preset time, the temperature controlled switch is controlled to be in a closed state, otherwise, the temperature controlled switch is controlled to be in an open state, therefore, the temperature control method can ensure that the temperature of each module such as a control chip in a power supply system is in a preset range, compared with the prior art, the temperature control method has high accuracy, can effectively reduce the working frequency of the over-temperature switch, and the problem of electronic element damage caused by temperature lag in a direct current booster circuit in a power supply system in the prior art.
The embodiment of the invention also provides a temperature control device, which comprises:
the acquisition unit is used for detecting the temperature of the control chip of the direct current booster circuit through the temperature detection circuit to acquire temperature data;
the control unit is used for controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal under the condition that the temperature is judged to rise within the preset time and the temperature in the power supply system is larger than a first threshold value according to the temperature data; and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range so as to enable the temperature of the power supply system control chip to be within the preset range.
The configuration unit is used for configuring the working mode of the timer to be a continuous increase and decrease working mode and the counting period to be N times of the carrier period; configuring the value of the register and setting the counter to be automatically counted; and under the condition that the value of the register is equal to the value of the counter, outputting one path of PWM wave.
The searching unit is used for acquiring a corresponding data set between the output voltage and the temperature of the power system control chip and searching a thermal hysteresis window appearing in the output voltage;
and the calculating unit is used for obtaining the temperature for controlling the chip to be switched off and the temperature for controlling the chip to be switched on in the power supply system according to the thermal hysteresis window information and calculating the temperature hysteresis quantity.
Wherein, the control unit includes:
and the first control subunit controls the temperature-controlled switch to be in a closed state if the falling amplitude of the power supply temperature exceeds the temperature hysteresis amount within the preset time, and otherwise controls the temperature-controlled switch to be in an open state.
The temperature control device and the temperature control method provided by the embodiment of the invention are based on the same inventive concept, have the same beneficial effects, and are not described herein again.
The embodiment of the invention also provides a direct current booster circuit which comprises the temperature control device.
Claims (10)
1. A method of temperature control, characterized by: the method comprises the following steps:
detecting the temperature of a power system control chip through a temperature detection circuit to obtain temperature data;
according to the temperature data, under the condition that the temperature rises within the preset time and the temperature in the power supply system is greater than a first threshold value, controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal;
and under the condition that the temperature of the power supply system control chip is reduced within the preset time, adjusting the working state of the temperature control switch according to the temperature reduction range so as to enable the temperature of the power supply system control chip to be within the preset range.
2. The temperature control method according to claim 1, characterized in that: reconfiguring the PWM signal, comprising:
the working mode of the timer is configured to be a continuous increase and decrease working mode, and the counting period is N times of the carrier period;
configuring the value of the register and setting the counter to be automatically counted;
and under the condition that the value of the register is equal to the value of the counter, outputting one path of PWM wave.
3. The temperature control method according to claim 1, characterized in that: according to the temperature decline range, before the operating condition of adjustment temperature detect switch, still include:
acquiring a corresponding data set between the output voltage and the temperature of a control chip of the power system, and finding out the thermal hysteresis window information of the output voltage;
and according to the thermal hysteresis window information, obtaining the temperature for controlling the chip in the power system to be switched off and the temperature information for switching on, and calculating the temperature hysteresis.
4. The temperature control method according to claim 3, characterized in that: finding a thermal hysteresis window for the presence of the output voltage, comprising:
under the condition of temperature rise, acquiring a first temperature when the output voltage drop rate is greater than a first preset rate and a second temperature when the output voltage drops to zero;
under the condition that the temperature is reduced, acquiring a third temperature when the rising rate of the output voltage is greater than a second preset rate and a fourth temperature when the output voltage is stably output;
the temperature information between the first temperature and the fourth temperature is thermal hysteresis window information.
5. The temperature control method according to claim 3, characterized in that:
the temperature for controlling the turn-off of the chip in the power supply system is a first temperature, and the temperature for controlling the turn-on of the chip in the power supply system is a third temperature.
6. The temperature control method according to claim 3, characterized in that: according to the temperature decline range, adjust temperature detect switch's operating condition, include:
and controlling the temperature control switch to be in a closed state if the falling amplitude of the power supply temperature exceeds the temperature hysteresis amount within the preset time, otherwise controlling the temperature control switch to be in an open state.
7. A temperature control apparatus, characterized in that the apparatus comprises:
the acquisition unit is used for detecting the temperature of the control chip of the direct current booster circuit through the temperature detection circuit to acquire temperature data;
the control unit is used for controlling the temperature control switch to be in a disconnected state and reconfiguring the PWM signal under the condition that the temperature is judged to rise within the preset time and the temperature in the power supply system is larger than a first threshold value according to the temperature data; under the condition that the temperature of the power supply system control chip is judged to be reduced within the preset time, the working state of the temperature control switch is adjusted according to the temperature reduction range, so that the temperature of the power supply system control chip is within a preset range;
the configuration unit is used for configuring the working mode of the timer to be a continuous increase and decrease working mode and the counting period to be N times of the carrier period; configuring the value of the register and setting the counter to be automatically counted; and under the condition that the value of the register is equal to the value of the counter, outputting one path of PWM wave.
8. The temperature control apparatus of claim 7, wherein the apparatus further comprises:
the searching unit is used for acquiring a corresponding data set between the output voltage and the temperature of the power system control chip and searching a thermal hysteresis window appearing in the output voltage;
and the calculating unit is used for obtaining the temperature for controlling the chip to be switched off and the temperature for controlling the chip to be switched on in the power supply system according to the thermal hysteresis window information and calculating the temperature hysteresis quantity.
9. The temperature control apparatus of claim 7, wherein the control unit comprises:
and the first control subunit controls the temperature-controlled switch to be in a closed state if the falling amplitude of the power supply temperature exceeds the temperature hysteresis amount within the preset time, and otherwise controls the temperature-controlled switch to be in an open state.
10. A dc boost circuit comprising the temperature control device according to any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110522081.1A CN113224946A (en) | 2021-05-13 | 2021-05-13 | Temperature control method and device and direct-current boost circuit |
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| CN202110522081.1A CN113224946A (en) | 2021-05-13 | 2021-05-13 | Temperature control method and device and direct-current boost circuit |
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| CN113224946A true CN113224946A (en) | 2021-08-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597858A (en) * | 2022-05-09 | 2022-06-07 | 上海芯龙半导体技术股份有限公司南京分公司 | Chip over-temperature protection circuit and corresponding chip and chip circuit |
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2021
- 2021-05-13 CN CN202110522081.1A patent/CN113224946A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597858A (en) * | 2022-05-09 | 2022-06-07 | 上海芯龙半导体技术股份有限公司南京分公司 | Chip over-temperature protection circuit and corresponding chip and chip circuit |
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