CN113224205A - Production equipment for silicon wafer - Google Patents
Production equipment for silicon wafer Download PDFInfo
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- CN113224205A CN113224205A CN202110467037.5A CN202110467037A CN113224205A CN 113224205 A CN113224205 A CN 113224205A CN 202110467037 A CN202110467037 A CN 202110467037A CN 113224205 A CN113224205 A CN 113224205A
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- cavity
- conveying mechanism
- valve
- substrate
- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 149
- 239000010703 silicon Substances 0.000 title claims abstract description 149
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 230000007246 mechanism Effects 0.000 claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000000137 annealing Methods 0.000 claims abstract description 28
- 238000003860 storage Methods 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 142
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 30
- 239000002210 silicon-based material Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000012300 argon atmosphere Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 17
- 238000007689 inspection Methods 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000004093 laser heating Methods 0.000 description 7
- 238000010248 power generation Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 210000001503 joint Anatomy 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- GRVDJDISBSALJP-UHFFFAOYSA-N methyloxidanyl Chemical compound [O]C GRVDJDISBSALJP-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- LTEHWCSSIHAVOQ-UHFFFAOYSA-N tripropyl borate Chemical compound CCCOB(OCCC)OCCC LTEHWCSSIHAVOQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses silicon wafer production equipment which comprises an initial storage part R1, a detection part R2, a silicon wafer forming part R3, an annealing part R4, a pn junction forming part R5, a buffer part R6 and a conveying mechanism arranged between adjacent parts, wherein each part comprises a cavity, a valve is arranged at the inlet end and the outlet end of each cavity, and the conveying mechanism is arranged between the valve positioned at the outlet end of the previous cavity and the valve positioned at the inlet end of the next cavity. The silicon slice production device utilizes the plurality of closed cavities and the conveying mechanism to produce silicon slices and convey substrates, is convenient to use, high in silicon slice production efficiency and high in automation degree, and does not need operations such as cutting and the like to abrade the silicon slices.
Description
Technical Field
The invention relates to photovoltaics, in particular to a silicon wafer production device.
Background
The silicon wafer is the most basic part of the crystalline silicon solar cell. Without a silicon wafer, a photo-generated current cannot be generated, and the silicon wafer cannot become a solar photovoltaic power generation cell, so that the manufacturing of the silicon wafer is one of the most important processes of the photovoltaic solar cell.
According to the basic principle of photovoltaic silicon-based power generation, the effective power generation thickness of the optimal silicon-based battery is calculated to be about 50 microns. The thin power generation layer is extremely thin, direct transition photovoltaic elements such as germanium and gallium can be purposefully introduced, and the potential possibility of breaking through the theoretical photovoltaic power generation efficiency limit is realized. However, the current process route cannot realize large-scale manufacturing of the thin silicon wafer, and industrial wire cutting is difficult to realize.
In the prior art, polycrystalline or monocrystalline silicon wafers are required to be subjected to a mechanical process of wire cutting, critical power generation pn junctions are only several microns, cutting inevitably causes hard fine scratches on the surfaces of the silicon wafers, and the silicon lattice structures on the surfaces are damaged. At present, the production process of silicon wafers is more, and the traditional slicing process still has the following problems: the process has more links and longer time consumption: the silicon wafer manufacturing process comprises the tedious processes of ingot casting, head and tail removal, surface grinding, chamfering, slicing and the like, and the method is high in material consumption cost, low in production efficiency and the like.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides silicon wafer production equipment, which utilizes a plurality of closed cavities and conveying mechanisms to produce silicon slices and convey substrates, is convenient to use, has high silicon wafer production efficiency and high automation degree, and reduces the cost without the operation of cutting and other silicon wafer abrasion operations.
In order to achieve the technical purpose, the invention adopts the following technical scheme: a silicon wafer production apparatus includes an initial storage section R1, a detection section R2, a silicon wafer forming section R3, an annealing section R4, a pn junction forming section R5, a buffer section R6, and a conveying mechanism provided between the adjacent sections, which are arranged in this order;
the silicon wafer forming part R3 is internally provided with a silicon material adding system, a wafer throwing mechanism and a wafer throwing platform, the wafer throwing mechanism drives the wafer throwing platform to rotate, and the silicon material adding system scatters liquid silicon materials on a substrate on the wafer throwing platform.
Further, each part comprises a cavity, a valve is arranged at the inlet end and the outlet end of each cavity, the valve enables the corresponding cavity to form a closed system, and the conveying mechanism is arranged between the valve at the outlet end of the previous cavity and the valve at the inlet end of the next cavity.
Further, the initial storage portion R1 includes a first cavity a1, and a storage rack is fixed in the first cavity a1 and used for storing the substrates; the first cavity a1 is connected with a vacuumizing device, a first heating device and an argon gas source.
Further, an initial close valve P is provided at an inlet end of the first chamber a1, an outer portion of the initial close valve P is connected to an initial transfer mechanism P1, and the initial transfer mechanism P1 transfers the substrate into the first chamber a 1; a first closed valve A is arranged at the outlet end of the first cavity a1, a first conveying mechanism a2 is connected to the outside of the first closed valve A, and the first conveying mechanism a2 conveys the substrate to the next part; the first cavity a1 is kept at a constant temperature and pressure.
Further, the inspection part R2 includes a second cavity b1 therein, and the second cavity b1 has an inspection platform for inspecting the substrate therein; the inlet end of the second cavity B1 is provided with a second closed valve B, and the outside of the second closed valve B is butted with the first conveying mechanism a 2; the outlet end of the second cavity b1 is provided with a third closed valve C, a second conveying mechanism b2 is connected to the outside of the third closed valve C, and the second conveying mechanism b2 conveys the substrate to the next part; the first conveying mechanism a2 is provided with a first buffer channel a3 which communicates the first cavity a1 and the second cavity b 1.
Further, the silicon wafer forming part R3 comprises a third cavity c1, the wafer throwing platform and the wafer throwing mechanism are arranged in the third cavity c1, the discharge port of the silicon feeding system is arranged in the third cavity c1, and the substrate is fixed on the wafer throwing platform; and the speed of the sheet throwing platform is changed from slow to fast within 1-10 seconds.
Further, a fourth closed valve D is arranged at an inlet end of the third cavity c1, and the fourth closed valve D is abutted with the second conveying mechanism b 2; a fifth closed valve E is arranged at the outlet end of the third cavity c1, a third conveying mechanism c2 is arranged outside the fifth closed valve E, and the third conveying mechanism c2 conveys the substrate with the silicon wafers to the next part; a high purity argon atmosphere was maintained in the third chamber c 1.
Further, the annealing part R4 includes a fourth cavity d1, an annealing support is disposed in the fourth cavity d1, and the substrate with silicon wafer is held on the annealing support; a third heating device and a second temperature sensor are also arranged in the fourth cavity d 1; the inlet end of the fourth cavity d1 is provided with a sixth closed valve F, and the sixth closed valve F is butted with the third conveying mechanism c 2; a seventh closed valve G is arranged at an outlet end of the fourth cavity d1, a fourth conveying mechanism d2 and a fifth conveying mechanism e2 are arranged outside the seventh closed valve G, an eighth closed valve H is arranged between the fourth conveying mechanism d2 and the fifth conveying mechanism e2, and the fifth conveying mechanism e2 conveys the annealed substrate to the next part; a high-purity argon atmosphere is maintained in the fourth chamber d 1.
Further, the pn junction forming part R5 includes a fifth cavity e1, and a pn junction making system is provided in the fifth cavity e 1; a ninth closing valve J is arranged at the inlet end of the fifth cavity e1 and is butted with the fifth conveying mechanism e 2; a tenth closed valve K is arranged at the outlet end of the fifth cavity e1, a sixth conveying mechanism f2 and a seventh conveying mechanism g2 are arranged outside the tenth closed valve K, an eleventh closed valve L is arranged between the sixth conveying mechanism f2 and the seventh conveying mechanism g2, and the seventh conveying mechanism g2 conveys the substrates forming the pn junction to the next part; p-type diffusion or n-type diffusion is performed in the fifth cavity e 1.
Further, the buffer portion R6 includes a sixth chamber f1, the sixth chamber f1 accommodates therein substrates forming a pn junction, an inlet end of the sixth chamber f1 is provided with a twelfth sealing valve M, the twelfth sealing valve M is abutted to the seventh conveying mechanism g2, an outlet end of the sixth chamber f1 is provided with a thirteenth sealing valve O, and the thirteenth sealing valve O is connected to the eighth conveying mechanism h 2.
In conclusion, the invention achieves the following technical effects:
1. the detection part R2 is arranged, so that the defects of the substrate can be preliminarily detected, the defective substrate can be removed in time, and the precision and the quality of silicon wafer production are ensured;
2. the invention is provided with a silicon wafer forming part R3, a wafer throwing mechanism and a wafer throwing platform are arranged in a cavity of the silicon wafer forming part, and a liquid silicon material is formed into a required silicon wafer by utilizing a substrate rotating mode;
3. the pn junction forming part R5 can be diffused in a p type or an n type, so that the use is convenient;
4. the buffer channel and the closed valve are arranged, so that a closed environment in each cavity can be realized, each cavity forms a closed system to meet the strict environmental condition formed by the silicon wafer, and the consistency of the environments is ensured through gas replacement;
5. the invention can automatically form silicon wafers, theoretically can realize silicon films with the thickness of less than 50 microns, theoretically can save more than 80 percent of silicon materials, save the silicon materials, has low cost, does not need cutting and other abrasion and has higher efficiency.
Drawings
FIG. 1 is a schematic diagram of a general structure of a production apparatus provided in an embodiment of the present invention;
FIG. 2 is a schematic view of an initial storage section;
FIG. 3 is a schematic view of a detecting part;
FIG. 4 is a schematic view of transport away at the detection section;
FIG. 5 is a schematic structural view of a silicon wafer forming part;
FIG. 6 is a schematic view of the working principle of the silicon wafer forming part;
FIG. 7 is a schematic view of an annealed portion;
FIG. 8 is a schematic view of a pn junction forming portion;
fig. 9 is a schematic view of a buffer portion structure.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
Example (b):
as shown in FIG. 1, an apparatus for producing a silicon wafer comprises an initial storage section R1, a detecting section R2, a silicon wafer forming section R3, an annealing section R4, a pn junction forming section R5, a buffer section R6, and a conveying mechanism provided between the adjacent sections, which are arranged in this order; the silicon wafer forming part R3 is internally provided with a silicon material adding system 7, a wafer throwing mechanism 8 and a wafer throwing platform 9, the wafer throwing mechanism 8 drives the wafer throwing platform 9 to rotate, and the silicon material adding system 7 scatters liquid silicon materials on the substrate 1 on the wafer throwing platform 9.
Specifically, each part all includes a cavity, the entry end and the exit end of each cavity all are provided with a valve, the valve makes and corresponds the cavity and form closed system, the valve can be opened or close so that corresponding cavity can open the transportation base plate or seal up and process the base plate, be equipped with conveying mechanism between the valve that is located the exit end of last cavity and the valve that is located the entry end of next cavity, conveying mechanism is provided with a plurality ofly for send the base plate that the last part was handled to next part and continue to handle or directly carry out the finished product base plate, wherein, be provided with conductive coating on the base plate.
Further, the conveyance mechanism includes an initial conveyance mechanism p1, a first conveyance mechanism a2, a second conveyance mechanism b2, a third conveyance mechanism c2, a fourth conveyance mechanism d2, a fifth conveyance mechanism e2, a sixth conveyance mechanism f2, a seventh conveyance mechanism g2, and an eighth conveyance mechanism h 2. The conveying mechanism is further provided with buffer channels, specifically a first buffer channel a3, a second buffer channel b3, a third buffer channel c3, a fourth buffer channel d3, a fifth buffer channel e3, a sixth buffer channel f3 and a seventh buffer channel g3 which respectively correspond to the buffer channels.
Further, the related hardware equipment comprises substrate detection equipment for detecting whether the substrate has defects, a plurality of conveying mechanisms for conveying the substrate, automatic isolation valve control equipment for controlling the opening and closing of a valve, laser heating equipment for heating the silicon wafer in the silicon wafer forming part R3, silicon feeding equipment for conveying liquid silicon materials to the silicon wafer forming part R3, a heat radiation prevention camera for collecting images, a temperature sensor for sensing the internal temperature, cavity constant-temperature heating equipment for ensuring the temperature in the cavity, vacuum pumping equipment for vacuumizing the cavity, argon filling equipment for filling argon into the cavity, and blade throwing equipment for rotationally scattering and diffusing the liquid silicon. All automation equipment of the equipment are controlled by a PLC program, manual work is replaced, automatic production is realized, and efficiency is improved.
Next, specific structures and operation principles of 6 sections, i.e., the initial storage section R1, the detection section R2, the silicon wafer forming section R3, the annealing section R4, the pn junction forming section R5, the buffer section R6, and the like are described in order:
as shown in fig. 2, the initial storage portion R1 includes a first cavity a1, which is mainly used to store substrates and allow the visually acceptable substrates to enter the next process according to the manufacturing process. A storage rack 21 is fixed in the first cavity a1, the storage rack 21 is used for storing the substrates 1, and 100-10000 substrates can be stored on the support according to the thickness of the substrates.
Specifically, the first chamber a1 is connected to a vacuum extractor (not shown), a first heater 31, and an argon gas source (not shown).
Specifically, an initial closing valve P is provided at an inlet end of the first chamber a1, an initial transfer mechanism P1 is connected to an outside of the initial closing valve P, and the initial transfer mechanism P1 transfers the substrate 1 into the first chamber a 1; a first close valve a (a valve a described below) is provided at an outlet end of the first chamber a1, a first transfer mechanism a2 is connected to an outside of the first close valve a, and the first transfer mechanism a2 transfers the substrate 1 to a next portion.
In the initial storage section R1, the operation principle is:
the substrate 1 is externally placed on an automatic initial transfer mechanism P1 controlled by a PLC, the initial transfer mechanism P1 transfers the substrate to an initial close valve P, the initial close valve P (valve P described below) senses the presence of the substrate, the valve P is automatically opened, the substrate enters the first chamber a1 through the initial close valve P, and a robot a (not shown) sequentially places the substrate on the storage shelf 21. Other automatic valves are always closed during substrate storage. When the storage procedure is completed, that is, the number of the stored substrates reaches the set value, the storage chamber stops operating the initial conveying mechanism P1, and the valve P is closed until the next substrate storage procedure is started.
After the valve P is closed, a vacuum-pumping device (not shown) is started to vacuum the first chamber a1, and when the vacuum degree reaches below 10Pa, an argon-filling procedure is started to heat the inside of the first chamber a1, so that the inside of the first chamber a1 is kept at a constant temperature and a constant pressure. Argon pressure range in the first chamber a 1: 30-80 kPa, temperature range: 300 to 600 ℃. When the constant temperature and the constant pressure reach the set time, the detecting section R2 of the next section is programmed to transport the substrates on the shelves one by one to the next section by the robot arm by the first transport mechanism a 2.
As shown in fig. 3, the inspection portion R2 includes a second cavity b1, and the inspection stage 22 for inspecting the substrate 1 is disposed in the second cavity b 1; the inlet end of the second cavity B1 is provided with a second closed valve B (valve B), and the outside of the second closed valve B is butted with the first conveying mechanism a 2; the outlet end of the second chamber b1 is provided with a third close valve C (valve C described below), and a second transport mechanism b2 is connected to the outside of the third close valve C, and the second transport mechanism b2 transports the substrate 1 to the next portion.
The first conveyance mechanism a2 is provided with a first buffer passage a3, and the second conveyance mechanism b2 is provided with a second buffer passage b 3.
The detection part R2 mainly has the function that quality inspection equipment (not shown) further detects whether the substrate has defects at the temperature of 300-600 ℃, qualified substrates enter the next step, unqualified substrates are transported out of the second cavity b1 through a special channel (not shown), and crushing, re-sintering and re-die pressing are carried out. The precision of the detection equipment is in the micron level, the quality of the photovoltaic module is greatly improved, and the photoelectric conversion efficiency of the photovoltaic module is improved. Second cavity b1 environment: the argon intensity was 100 kPa.
In the detection section R2, the operation principle is:
as shown in fig. 4, in the first chamber a1, the robot a sequentially puts the substrates on the first transfer mechanism a2 of the first buffer passage a3 in accordance with the order of the substrates stored on the racks by the robot a at a constant temperature and pressure. PLC controlled automatic valve opening sequence: when the robot a in the first chamber a1 "carries" the substrate, and when the robot a moves to a set position, the automatic valve a receives a sensor signal, the robot a in the first chamber a1 puts the substrate into the first buffer channel a3, and the valve a is automatically opened. The hand a places the substrate on the first transfer mechanism a2, the hand a withdraws from the first buffer passage a3, the hand a withdraws to the set position, and the valve a is closed. When the first transfer mechanism a2 transfers the substrate to the set position sensed by the automatic valve B, the valve B is automatically opened, the robot B in the second chamber B1 places the substrate in the first buffer passage a3 into the second chamber B1, the substrate is waiting for inspection, the valve B is automatically closed, and the quality inspection device (not shown) starts the process of inspecting the substrate.
The device is used for detecting the quality of a substrate in the second cavity b1, and the main purpose is to manufacture a high-quality photovoltaic cell assembly. The quality inspection equipment sets a certain substrate quality inspection standard, qualified substrates meeting the standard enter the next cavity to be subjected to subsequent procedures, and unqualified substrates are sent to a special channel to exit the second cavity b 1. The substrate quality inspection standards were as follows: the appearance shape has no broken pieces, cracks, unfilled corners, gaps, stains, falling off and the like; the external dimension-side length deviation is less than +/-0.5 mm, and the diagonal deviation is less than +/-0.3 mm; thickness dimension-indentation deviation of + -10 um, warp degree of <50um, bow of <75um, thickness variation of < 5% nominal thickness; the edge breakage requirement is that the length is less than 1mm, the depth is less than 0.5mm, and the number is less than or equal to 2; the straight line verticality of the two adjacent sides is less than 90 +/-0.3 degrees. The substrate not meeting the above standard will exit the second cavity b1 through a dedicated channel, and the substrate meeting the above standard will enter the next silicon wafer fabrication cavity.
As shown in fig. 5, the silicon wafer forming part R3 includes a third cavity c1, a wafer throwing platform 9 and a silicon feeding system 7 are disposed in the third cavity c1, the silicon feeding system 7 sprays silicon on the substrate on the wafer throwing platform 9, and the wafer throwing platform 9 rotates. Further, the flail platform 9 is connected with a flail mechanism 8, and the flail mechanism 8 drives the flail platform 9 to rotate; the third cavity c1 is further provided therein with a second heating device (such as the first laser heater 51, the second laser heater 52, and the constant temperature heater 32 shown in fig. 5), a first temperature sensor 41, an image sampling device employing camera 6, a vacuum extraction mechanism (not shown), and an argon gas charging system (not shown).
Wherein, get rid of piece mechanism 8 and can adopt structures such as servo motor, step motor or other structures to drive and get rid of piece platform 9 rotatory.
The functions of the above hardware devices are as follows: the silicon material adding system 7 is used for weighing silicon materials (the weight of the silicon materials is calculated according to the thickness of a silicon wafer and the area of a substrate and is set as a fixed value), the silicon material adding system 7 utilizes first laser heating 51 to keep the silicon materials at a constant temperature, under the assistance of second laser heating 52, the temperature of the silicon materials is quickly increased to be higher than the melting point of the silicon materials, solid silicon is changed into liquid silicon, and the liquid silicon is dripped onto the substrate on the wafer throwing mechanism; the first temperature sensor 41 detects the temperature of c in the closed system, keeping the temperature constant; the first laser heating 51 is used for keeping the silicon material at a constant temperature to provide heat energy, and the second laser heating 52 is used for changing solid silicon into liquid silicon to provide instant heat energy, wherein the first laser heating and the second laser heating are used for adjusting laser power and laser pulses to achieve the required heat energy; the camera 6, namely a heat radiation prevention camera, has the function of recording each detail and process of the flail, so that the production technology is improved conveniently; the constant temperature heater 32 is used for keeping the third cavity c1 constant in temperature to provide heat; the main function of the wafer throwing mechanism 8 is to form the required silicon wafer on the substrate at a certain rotating speed by the liquid silicon on the substrate.
Further, a fourth closed valve D is arranged at an inlet end of the third cavity c1, and the fourth closed valve D is in butt joint with the second conveying mechanism b 2; the outlet end of the third chamber c1 is provided with a fifth sealing valve E, and a third transfer mechanism c2 is provided outside the fifth sealing valve E, and the third transfer mechanism c2 transfers the substrate 1 with the silicon wafer to the next portion.
The silicon wafer forming part R3 has the main function of throwing out silicon wafers on the surface of a qualified substrate, and throwing out silicon wafers with different thicknesses according to different use requirements of the silicon wafers. The environment requirement in the third cavity c1 is high, the whole system for manufacturing the silicon wafer cavity is closed, the whole system is vacuumized by a vacuum pump (not shown), and then high-purity argon gas (not shown) is filled; then, vacuumizing and filling high-purity argon gas are carried out, so that the system is repeatedly cleaned for many times, the whole system is kept in the high-purity argon atmosphere, and the silicon wafer is not polluted by the external environment in the process of forming the silicon wafer. The argon pressure in the third chamber c1 is kept within the required range: 40-80 kPa, constant temperature requirement: 1250-1400 ℃, and the constant temperature is different according to the thickness of the silicon wafer.
In the silicon wafer forming portion R3, the operation principle is:
as shown in fig. 6, the qualified substrates in the substrate inspection chamber enter the third chamber c1, and the automatic transportation process is similar to the above-mentioned transportation process, and will not be described redundantly. Qualified substrates in the second cavity b1 pass through a second buffer channel b3 and enter a third cavity c1 through a second conveying mechanism b2, and the substrates are placed at the designated position of a wafer throwing mechanism platform through a manipulator c and fixed on the platform; the substrate is heated to 1250-1400 ℃ in the environment, so that the liquid silicon is prevented from being partially solidified instantly when dropping on the substrate; the silicon charge is metered into the feed system, for example 50 microns thick, 210mm side length2The silicon wafer of (2) requires a silicon mass weight of about 5.2 g. After entering a charging system, the silicon material is heated by laser 1 to keep constant temperature, and the temperature range is as follows: keeping the temperature at 1300-1400 ℃ for 1-5 ℃, then heating the silicon by laser 2 instantly to above 1450 ℃, and instantly changing the solid silicon into liquid silicon; the silicon material adding system is connected with an argon gas charging port, and the pulse argon gas pushes the liquid silicon to a substrate on a wafer throwing mechanism platform. The throwing piece is quickly started, the action of the throwing piece mechanism is accurately controlled, and the speed is changed from slow to fast; get rid of the base plate that piece mechanism drove on the platform and rotate and get rid of the piece, reach within 1 ~ 10 seconds and set for the rotational speed, the rotational speed scope: 300 to 5000 rpm. When the liquid silicon is thrown away on the substrate, a layer of film is formed, and a cold source is added on the upper surface of the film, wherein the cold source is solid or inert gas with the temperature lower than 1000 ℃. From the surface to the filmAnd (5) solidifying, so that the melted silicon material forms a p-type or n-type layer of crystal thin silicon wafer on the substrate material. The formed silicon wafers are uniform in thickness and are polycrystalline or monocrystalline thin silicon wafers.
According to the technology, the preheating temperature of the substrate, the melting temperature of the silicon material and the precise action mode and the action parameters of the flaker mechanism are set in the process, so that one surface of the substrate is completely contacted with liquid silicon, and the substrate is in close contact with the silicon wafer. The thickness of the manufactured silicon chip is related to the technical parameters such as the temperature of liquid silicon, the temperature of a substrate, the temperature of a cold source, the rotating speed of a wafer throwing mechanism and the like. The thinner the silicon wafer manufactured on the substrate is, the higher parameters such as the temperature of the substrate, the temperature of liquid silicon, the rotating speed of the wafer throwing mechanism and the like are required.
As shown in fig. 7, the annealing portion R4 includes a fourth chamber d1, an annealing support 23 is provided in the fourth chamber d1, and the substrate 1 with silicon wafer is placed on the annealing support 23; the fourth cavity d1 is also internally provided with a third heating device (an annealing heater 33 and an annealing heater 34) and a second temperature sensor 42; a sixth sealing valve F is arranged at the inlet end of the fourth cavity d1 and is in butt joint with a third conveying mechanism c 2; a seventh closed valve G is arranged at an outlet end of the fourth cavity d1, a fourth conveying mechanism d2 and a fifth conveying mechanism e2 are arranged outside the seventh closed valve G, an eighth closed valve H is arranged between the fourth conveying mechanism d2 and the fifth conveying mechanism e2, and the fifth conveying mechanism e2 conveys the annealed substrate 1 to the next part.
The annealing part R4 mainly functions to lower the temperature of the silicon wafer formed on the substrate according to the temperature curve and remove the stress of the substrate, the contact surface of the substrate and the silicon wafer, the silicon wafer and the like. The equipment in the fourth chamber d1 includes an annealing heater, a temperature sensor and an annealing support. The internal environmental requirements in the fourth chamber d1 are the same as in the third chamber c 1. Before use, the whole system is vacuumized by a vacuum pump, and then high-purity argon is filled; then, vacuumizing and filling high-purity argon gas are carried out, so that the system is repeatedly cleaned for many times, the whole system is kept in a high-purity argon atmosphere, and the silicon wafer forming process is not polluted by the external environment. The argon pressure and the constant temperature in the fourth chamber d1 are also maintained to be the same as those in the third chamber c1, so that the quality of the silicon wafer and the substrate is not affected by the pressure and the temperature during the transportation from the third chamber c1 to the fourth chamber d 1. The argon pressure is required to be constant, the setting range is 40-80 kPa, the constant temperature setting range is 1250-1400 ℃, and in order to ensure the performance of the silicon wafer, the temperature of the fourth cavity d1 before annealing is consistent with that of the third cavity c 1. The annealing support in the fourth cavity d1 can hold substrates with silicon wafers in the number range: 100 to 10000 tablets.
When the substrate on which the silicon wafer is formed enters the fourth chamber d1 from the third chamber c1 through the third buffer passage c3 by the third transfer mechanism c2, the silicon wafer is placed on the annealing support by the robot d. When the number of the silicon wafers reaches a set value, the annealing temperature curve and the annealing time which start to decrease from the constant temperature in the fourth cavity d1 are different according to the thickness of the formed silicon wafers and the thickness of the substrate, and the annealing time range is as follows: the annealing temperature is the lowest temperature of the pn junction formed by diffusion and ranges from 800 ℃ to 1000 ℃ for 0.5-12 hours. And a thin silicon wafer formed on the surface of the substrate enters an annealing cavity to carry out crystal growth heat treatment, and internal stress formed during solidification is eliminated so as to improve the manufacturing qualification rate of subsequent processes.
As shown in fig. 8, the pn junction forming portion R5 includes a fifth cavity e1, and the pn junction forming system 10 is disposed in the fifth cavity e 1; a ninth closing valve J is arranged at the inlet end of the fifth cavity e1 and is in butt joint with the fifth conveying mechanism e 2; a tenth closed valve K is arranged at the outlet end of the fifth cavity e1, a sixth conveying mechanism f2 and a seventh conveying mechanism g2 are arranged outside the tenth closed valve K, an eleventh closed valve L is arranged between the sixth conveying mechanism f2 and the seventh conveying mechanism g2, and the seventh conveying mechanism g2 conveys the substrate 1 forming the pn junction to the next part.
The pn junction forming portion R5 mainly functions to p-type or n-type diffusion of the annealed silicon wafer, that is, diffusion in the pn junction forming system 10. When the ultra-thin silicon chip on the substrate is p-type, diffusion with phosphorus as a diffusion source is required to be carried out in the cavity; the ultra-thin silicon wafer on the substrate is n-type, and diffusion with boron as a diffusion source is required in the cavity. Different diffusion types and different diffusion equipment are used, and the diffusion equipment can be in a market model.
In this embodiment, n-typeThe silicon wafer is subjected to boron diffusion for illustration. In this example, the conventional boron diffusion process is used for the n-type silicon wafer, and trimethyl borate B (CH3O) is usually used for the liquid source boron diffusion3Tripropylborate and boron tribromide B (Br)3Anhydrous trimethyl borate B (CH3O)3The trimethyl borate is colorless transparent liquid, is formed by volatilization at room temperature, has higher true air pressure, is easy to decompose when meeting water, and is converted into boric acid and methanol. The gaseous boron source is commonly used for boron chloride diffusion, and the solid boron source is commonly used for boron nitride.
The doping element of the n-type silicon wafer material substrate is phosphorus, and boron element needs to be driven into the surface of the silicon wafer to achieve the purpose of forming a pn junction. An n-type silicon wafer is used as a substrate material, and a pyramid texture surface is formed on the surface of the silicon wafer through alkaline corrosion; RCA cleaning and drying are carried out on the surface of the processed silicon wafer; preparing a pn junction on the surface of a silicon wafer, placing the dried n-type silicon wafer in a diffusion furnace tube, controlling the temperature at 850-900 ℃, and depositing a boron source on the surface of the silicon wafer. And (3) when the deposition time reaches a set value, raising the temperature to 900-950 ℃, diffusing boron atoms to the surface of the silicon wafer, wherein the diffusion depth is less than 5 microns, and forming a pn junction. The whole diffusion process is carried out in the environment of nitrogen, oxygen and nitrogen with boron source, and the diffusion pressure is stabilized by nitrogen. The whole diffusion is operated in a closed system, and is nontoxic and pollution-free.
In order to prevent the diffusion gas in the fifth chamber e1 from affecting the entire production line and the external environment, the annealed substrate with the very thin silicon wafer is transported from the fourth chamber d1 into the fifth chamber e1 through the fourth buffer passage d3 and the fifth buffer passage e 3. In the fourth chamber d1, the annealed silicon wafers are sequentially loaded onto the fourth transfer mechanism d2 in the fourth buffer channel d3 by the robot d according to the order of the silicon wafers on the annealing support. Automatic valve opening sequence: and a mechanical arm d in the fourth cavity d1 carries silicon wafers, and when the mechanical arm d runs to a set position, the valve G is automatically opened. The robot d puts the substrate on the robot transport d, the robot d withdraws from the fourth buffer path d3, and the valve G is closed. When the fourth conveying mechanism d2 conveys the silicon wafer to the set position sensed by the automatic valve H, the valve H is automatically opened, the silicon wafer enters the fifth buffer channel e3, and the valve H is automatically closed. The fourth buffer passage d3 is closed at this time, and the atmosphere is restored to the same atmosphere as the fourth chamber d1 by gas replacement. When the fifth conveying mechanism e2 conveys the silicon wafer to the set position sensed by the automatic valve J, the manipulator e in the fifth cavity e1 places the silicon wafer in the fifth buffer channel e3 into the fifth cavity e1, and the valve J is automatically closed after the diffusion process. And when the silicon wafers reach the set number, the diffusion equipment starts a diffusion program.
As shown in fig. 9, the buffer portion R6 includes a sixth chamber f1, the sixth chamber f1 accommodates therein substrates forming a pn junction, a twelfth sealing valve M (valve M described below) is provided at an inlet end of the sixth chamber f1, the valve M is abutted against the seventh transporting mechanism g2, a thirteenth sealing valve O (valve O described below) is provided at an outlet end of the valve M, and the valve O is connected to the eighth transporting mechanism h 2.
The buffer part R6 mainly functions to take out the silicon wafer with pn junction formed after diffusion, prevent diffusion gas from leaking out, and simultaneously anneal the silicon wafer through the buffer cavity.
To prevent the diffusion gas from leaking, two buffer channels are needed from the fifth chamber e1 to the sixth chamber f1, and the silicon wafer transportation process is similar to that from the fourth chamber d1 to the fifth chamber e1, and will not be described redundantly. Because the silicon wafer diffusion process is carried out in an environment of 850-950 ℃, the temperature of the silicon wafer needs to be reduced to room temperature, and then the process for manufacturing the battery and the assembly is carried out. The silicon wafer is annealed and cooled in the sixth cavity f1 of the buffer cavity. The main method for cooling is to introduce nitrogen for cooling, wherein the flow rate of nitrogen gas is 5-13 l/min, and the cooling rate is 6-15 ℃/min.
The surface of the silicon sheet produced by the equipment is naturally grown, an almost perfect crystal lattice structure can be obtained, and the equipment is undoubtedly a positive factor for improving the power generation efficiency.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. The production equipment of the silicon chip is characterized in that: comprises an initial storage part R1, a detection part R2, a silicon wafer forming part R3, an annealing part R4, a pn junction forming part R5, a buffer part R6 and a conveying mechanism arranged between the adjacent parts, which are arranged in sequence;
the silicon wafer forming part R3 is internally provided with a silicon material adding system (7), a wafer throwing mechanism (8) and a wafer throwing platform (9), the wafer throwing mechanism (8) drives the wafer throwing platform (9) to rotate, and the silicon material adding system (7) scatters liquid silicon materials on a substrate (1) on the wafer throwing platform (9).
2. The silicon wafer production apparatus according to claim 1, characterized in that: each part comprises a cavity, a valve is arranged at the inlet end and the outlet end of each cavity, the valve enables the corresponding cavity to form a closed system, and the conveying mechanism is arranged between the valve at the outlet end of the previous cavity and the valve at the inlet end of the next cavity.
3. The silicon wafer production apparatus according to claim 2, characterized in that: the initial storage portion R1 includes a first cavity a1, a storage rack (21) is fixed in the first cavity a1, and the storage rack (21) is used for storing the substrate (1); the first cavity a1 is connected with a vacuumizing device, a first heating device and an argon gas source.
4. The silicon wafer production apparatus according to claim 3, characterized in that: an initial closing valve P is arranged at the inlet end of the first cavity a1, the exterior of the initial closing valve P is connected with an initial conveying mechanism P1, and the initial conveying mechanism P1 conveys the substrate (1) into the first cavity a 1; a first closed valve A is arranged at the outlet end of the first cavity a1, a first conveying mechanism a2 is connected to the outside of the first closed valve A, and the first conveying mechanism a2 conveys the substrate (1) to the next part; the first cavity a1 is kept at a constant temperature and pressure.
5. The silicon wafer production apparatus according to claim 4, wherein: the detection part R2 comprises a second cavity b1, and a detection platform (22) for detecting the substrate (1) is arranged in the second cavity b 1; the inlet end of the second cavity B1 is provided with a second closed valve B, and the outside of the second closed valve B is butted with the first conveying mechanism a 2; the outlet end of the second cavity b1 is provided with a third closed valve C, the exterior of the third closed valve C is connected with a second conveying mechanism b2, and the second conveying mechanism b2 conveys the substrate (1) to the next part; the first conveying mechanism a2 is provided with a first buffer channel a3 which communicates the first cavity a1 and the second cavity b 1.
6. The silicon wafer production apparatus according to claim 5, wherein: the silicon wafer forming part R3 comprises a third cavity c1, the wafer throwing platform (9) and the wafer throwing mechanism (8) are arranged in the third cavity c1, the discharge hole of the silicon feeding system (7) is arranged in the third cavity c1, and the substrate (1) is fixed on the wafer throwing platform (9); and the speed of the sheet throwing platform (9) is changed from slow to fast within 1-10 seconds.
7. The silicon wafer production apparatus according to claim 6, wherein: the inlet end of the third cavity c1 is provided with a fourth closed valve D which is butted with the second conveying mechanism b 2; the outlet end of the third cavity c1 is provided with a fifth closed valve E, the outside of the fifth closed valve E is provided with a third conveying mechanism c2, and the third conveying mechanism c2 conveys the substrate (1) with the silicon wafers to the next part; a high purity argon atmosphere was maintained in the third chamber c 1.
8. The silicon wafer production apparatus according to claim 7, wherein: the annealing part R4 comprises a fourth cavity d1, an annealing support (23) is arranged in the fourth cavity d1, and the substrate (1) with a silicon wafer is placed on the annealing support (23); a third heating device and a second temperature sensor are also arranged in the fourth cavity d 1; the inlet end of the fourth cavity d1 is provided with a sixth closed valve F, and the sixth closed valve F is butted with the third conveying mechanism c 2; a seventh closed valve G is arranged at an outlet end of the fourth cavity d1, a fourth conveying mechanism d2 and a fifth conveying mechanism e2 are arranged outside the seventh closed valve G, an eighth closed valve H is arranged between the fourth conveying mechanism d2 and the fifth conveying mechanism e2, and the fifth conveying mechanism e2 conveys the annealed substrate (1) to the next part; a high-purity argon atmosphere is maintained in the fourth chamber d 1.
9. The silicon wafer production apparatus according to claim 8, wherein: the pn junction forming part R5 comprises a fifth cavity e1, and a pn junction manufacturing system (10) is arranged in the fifth cavity e 1; a ninth closing valve J is arranged at the inlet end of the fifth cavity e1 and is butted with the fifth conveying mechanism e 2; a tenth closed valve K is arranged at the outlet end of the fifth cavity e1, a sixth conveying mechanism f2 and a seventh conveying mechanism g2 are arranged outside the tenth closed valve K, an eleventh closed valve L is arranged between the sixth conveying mechanism f2 and the seventh conveying mechanism g2, and the seventh conveying mechanism g2 conveys the substrate (1) forming the pn junction to the next part; p-type diffusion or n-type diffusion is performed in the fifth cavity e 1.
10. The silicon wafer production apparatus according to claim 9, characterized in that: the buffer part R6 includes a sixth chamber f1, the sixth chamber f1 holds the substrate forming the pn junction therein, the inlet end of the sixth chamber f1 is provided with a twelfth sealing valve M, the twelfth sealing valve M is butted with the seventh conveying mechanism g2, the outlet end of the sixth chamber f1 is provided with a thirteenth sealing valve O, and the thirteenth sealing valve O is connected with the eighth conveying mechanism h 2.
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| CN110643977A (en) * | 2019-09-12 | 2020-01-03 | 常州比太科技有限公司 | Equipment for manufacturing HIT battery by integrating PECVD (plasma enhanced chemical vapor deposition) and PVD (physical vapor deposition) coating |
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