CN113224195A - 一种薄型光吸收区的光二极体结构 - Google Patents

一种薄型光吸收区的光二极体结构 Download PDF

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CN113224195A
CN113224195A CN202110416680.5A CN202110416680A CN113224195A CN 113224195 A CN113224195 A CN 113224195A CN 202110416680 A CN202110416680 A CN 202110416680A CN 113224195 A CN113224195 A CN 113224195A
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gaas
insertion layer
photodiode structure
light absorption
light
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方照诒
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Shenzhen Demingli Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

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Abstract

本发明涉及一种薄型光吸收区的光二极体结构，从上至下依次包括p‑GaAs、p‑A l GaAs、i‑GaAs、插入层、n‑GaAs、GaAs Substrate,其中，所述插入层由若干对DBR反射镜结构组成，所述插入层将穿透所述i‑GaAs的光再次反射回所述i‑GaAs进行二次吸收。

Description

一种薄型光吸收区的光二极体结构
技术领域
本发明涉及光二极体技术领域，尤其涉及一种薄型光吸收区的光二极体结构。
背景技术
现有的850nm光通讯模块收光二极管(photo-diode)通常是PIN结构，由于是应用在高频应有上，为了提高其频响，通常会采用缩小收光截面积的方式来提高其截至频率。但越小的收光截面积，会造成信号光束难以完全落入收光区，直接影响通讯模块的有效传输距离。在模块工艺上，也会增加光耦和工艺的难度。而相对应的外延架构基本如下:即是在GaAs衬底上依序堆叠n-GaAs/i-GaAs/p-AlGaAs/p-GaAs,其中p-GaAs/n-GaAs则充当P/N型接触层，i-GaAs则为主要的光吸收层。
发明内容
鉴于上述状况，有必要提出一种扩大收光面积及维持较高的频响的薄型光吸收区的光二极体结构。
为了解决上述技术问题，本发明采用的技术方案为：一种薄型光吸收区的光二极体结构，从上至下依次包括p-GaAs、p-AlGaAs、i-GaAs、插入层、n-GaAs、GaAs Substrate,其中，所述插入层由若干对DBR反射镜结构组成，所述插入层将穿透所述i-GaAs的光再次反射回所述i-GaAs进行二次吸收。
进一步的，所述i-GaAs的厚度为
Figure BDA0003026203320000021
进一步的，所述插入层的厚度为
Figure BDA0003026203320000022
进一步的，所述插入层为n-AlGaAs。
进一步的，所述n-AlGaAs为AlxGaAs，其中x为10-90。
进一步的，所述插入层为GaAs DBR。
进一步的，所述GaAs Substrate为无掺杂UID-GaAs衬底。
本发明的有益效果在于：在i-GaAs吸光区下方制备数对DBR反射镜结构，将穿透薄i-GaAs吸光区的光再次反射回i-GaAs进行二次吸收，以达到提高灵敏度及频响的目的。由于光进行了反射，原则上其i-GaAs厚度可减至原先厚度的50％，因而可以将收光面积增加为原来2倍，能提高后续光耦合工艺的效率。
附图说明
图1是本发明实施例一种薄型光吸收区的光二极体结构的结构示意图。
标号说明：
100、p-GaAs；200、p-AlGaAs；300、i-GaAs；400、插入层；500、n-GaAs；600、GaAsSubstrate。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明一种薄型光吸收区的光二极体结构进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
请参照图1，一种薄型光吸收区的光二极体结构，从上至下依次包括p-GaAs100、p-AlGaAs200、i-GaAs300、插入层400、n-GaAs500、GaAs Substrate600(砷化镓衬底),其中，插入层400由若干对DBR反射镜结构组成，插入层400将穿透i-GaAs300的光再次反射回i-GaAs300进行二次吸收。
在i-GaAs300吸光区下方制备数对DBR反射镜结构，将穿透薄i-GaAs300吸光区的光再次反射回i-GaAs300进行二次吸收，以达到提高灵敏度及频响的目的。由于光进行了反射，原则上其i-GaAs300厚度可减至原先厚度的50％，因而可以将收光面积增加为原来2倍，能提高后续光耦合工艺的效率。
优选的，i-GaAs300的厚度为
Figure BDA0003026203320000031
通过设置插入层400，可以将i-GaAs300的厚度减薄至现有的光二级体的i-GaAs300的一半，从而提高收光面积。
优选的，插入层400的厚度为
Figure BDA0003026203320000032
优选的，插入层400为n-AlGaAs。特别的，n-AlGaAs为AlxGaAs，其中x为10-90。或者，作为本发明的另一实施方式，插入层400为GaAs DBR。
优选的，GaAs Substrate600为无掺杂UID-GaAs衬底。采用无掺杂UID-GaAs衬底可以提高响应频率。
以下为其中一种结构实施例：
Figure BDA0003026203320000033
Figure BDA0003026203320000041
综上所述，本发明提供的一种薄型光吸收区的光二极体结构，在i-GaAs吸光区下方制备数对DBR反射镜结构，将穿透薄i-GaAs吸光区的光再次反射回i-GaAs进行二次吸收，以达到提高灵敏度及频响的目的。由于光进行了反射，原则上其i-GaAs厚度可减至原先厚度的50％，因而可以将收光面积增加为原来2倍，能提高后续光耦合工艺的效率。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (7)

1.一种薄型光吸收区的光二极体结构，其特征在于，从上至下依次包括p-GaAs、p-AlGaAs、i-GaAs、插入层、n-GaAs、GaAs Substrate,其中，所述插入层由若干对DBR反射镜结构组成，所述插入层将穿透所述i-GaAs的光再次反射回所述i-GaAs进行二次吸收。
2.根据权利要求1所述的一种薄型光吸收区的光二极体结构，其特征在于，所述i-GaAs的厚度为
Figure FDA0003026203310000012
3.根据权利要求1所述的一种薄型光吸收区的光二极体结构，其特征在于，所述插入层的厚度为
Figure FDA0003026203310000011
4.根据权利要求1所述的一种薄型光吸收区的光二极体结构，其特征在于，所述插入层为n-AlGaAs。
5.根据权利要求4所述的一种薄型光吸收区的光二极体结构，其特征在于，所述n-AlGaAs为AlxGaAs，其中x为10-90。
6.根据权利要求1所述的一种薄型光吸收区的光二极体结构，其特征在于，所述插入层为GaAs DBR。
7.根据权利要求1所述的一种薄型光吸收区的光二极体结构，其特征在于，所述GaAsSubstrate为无掺杂UID-GaAs衬底。
CN202110416680.5A 2021-04-19 2021-04-19 一种薄型光吸收区的光二极体结构 Pending CN113224195A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
CN101915657A (zh) * 2009-08-19 2010-12-15 中国科学院半导体研究所 判定无上反射镜谐振腔增强型光电探测器有效腔模的方法
CN112259617A (zh) * 2020-11-12 2021-01-22 江苏华兴激光科技有限公司 一种850nm波段高响应度探测器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
CN101915657A (zh) * 2009-08-19 2010-12-15 中国科学院半导体研究所 判定无上反射镜谐振腔增强型光电探测器有效腔模的方法
CN112259617A (zh) * 2020-11-12 2021-01-22 江苏华兴激光科技有限公司 一种850nm波段高响应度探测器

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Application publication date: 20210806