CN113224180A - Preparation method of battery piece - Google Patents
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- CN113224180A CN113224180A CN202110467883.7A CN202110467883A CN113224180A CN 113224180 A CN113224180 A CN 113224180A CN 202110467883 A CN202110467883 A CN 202110467883A CN 113224180 A CN113224180 A CN 113224180A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Life Sciences & Earth Sciences (AREA)
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a battery piece, which comprises the following steps of: mixing silicon-containing material powder and/or silicon compound powder, performing, and coating aluminum oxide on a forming plate to form the substrate; preparing a silicon wafer on the substrate: injecting liquid silicon onto the substrate, and then rotating the substrate to enable the liquid silicon to be dispersed to form a layer of thin film; the thin film is solidified downwards to form a crystal thin silicon wafer; annealing the thin silicon wafer, then diffusing to form a pn junction, and annealing the pn junction to form a silicon wafer; preparing a battery piece by using the silicon chip: forming an antireflection film on the silicon wafer; and manufacturing an electrode on the surface of the antireflection film to form a battery piece. The invention has the advantages of less process links, shorter time consumption, short manufacturing period, higher battery yield, greatly reduced broken materials and low cost.
Description
Technical Field
The invention relates to preparation of a battery piece, in particular to a preparation method of the battery piece.
Background
After 2010, under the background that the demand of the photovoltaic industry is relieved in Europe, the photovoltaic industry in China rises rapidly and becomes the main power for the development of the global photovoltaic industry, and the integrated photovoltaic installed grid capacity 16GW is accumulated. In 2019, the newly added photovoltaic grid-connected installed capacity of China reaches 30.1GW, the accumulated photovoltaic grid-connected installed capacity reaches 204.3GW, and the increase on a par is 17.1%; the annual photovoltaic power generation amount is 2242.6 hundred million kilowatt hours, the year-round photovoltaic power generation amount is increased by 26.3 percent in year-round, the year-round photovoltaic power generation amount accounts for 3.1 percent of the annual total power generation amount in China, and the year-round photovoltaic power generation amount is increased by 0.5 percent in year-round. The national energy agency issues a photovoltaic power generation grid-connected operation condition of one quarter in 2020, wherein a photovoltaic power generation installation 395 ten thousand kilowatts is newly added in the whole country, a centralized photovoltaic installation 223 ten thousand kilowatts is newly added, and a distributed photovoltaic installation 172 ten thousand kilowatts is newly added.
The large-size silicon chip is a necessary choice in the cost reduction and efficiency improvement trend of the industry. The large-size silicon wafer reduces the cost of single-unit long crystal at the silicon wafer end, and the cost of single-watt non-silicon is spread in the links of a battery, an assembly and a system, so that the economic benefit is remarkable; longji Yongquan company plans the rapid production expansion of 166mm monocrystalline silicon wafers; the medium ring stockings company stepped into the age of 210mm single crystal silicon wafers.
At present, the traditional process in the world mainly comprises the process flows of ingot casting polycrystalline silicon ingot (or straight pulling single crystal), squaring, surface grinding, chamfering, slicing and the like. Wherein, 30 percent of silicon materials can not enter the next flow in the squaring process. The mainstream silicon slice technology adopts a yarn cutting machine, and the core of the yarn cutting machine is that a thin steel wire with the thickness of 0.06-0.12 mm is wound on four driving shafts at equal intervals, then a silicon ingot is slowly close to the steel wire, and the silicon ingot is broken by grinding through friction between the steel wire and the silicon ingot, so that slicing is realized. The biggest disadvantage of this method is that the saw cuts are almost as thick as the silicon wafers or even larger than the silicon wafers, and more than 50% of the silicon material becomes a mixture of silicon powder, abrasive and metal filings, which is almost unrecoverable, and the silicon material used only for photovoltaic cells is about 30%. The cost of manufacturing the solar cell plate accounts for about 63% of the total cost, so the cost reduction of the solar cell plate is a main problem of reducing the cost of the solar cell module.
The traditional slicing process at present has the following problems: the process has more links and longer time consumption: the silicon wafer manufacturing process comprises the tedious processes of ingot casting, head and tail removal, surface grinding, chamfering, slicing and the like, and the method is high in material consumption cost, low in production efficiency and the like. In addition, the existing photovoltaic cell production technology has the following problems: the silicon wafer can not be lower than 150um, otherwise, the breakage rate in the process of manufacturing the silicon wafer is greatly increased, and the yield of the battery is greatly reduced.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the preparation method of the battery piece, which has the advantages of less process links, short time consumption, short manufacturing period, high battery yield, greatly reduced broken materials and low cost.
In order to achieve the technical purpose, the invention adopts the following technical scheme: a preparation method of a battery piece comprises the following steps,
preparing a substrate: mixing silicon-containing material powder and/or silicon compound powder, performing, and coating aluminum oxide on a forming plate to form the substrate;
preparing a silicon wafer on the substrate: injecting liquid silicon onto the substrate, and then rotating the substrate to enable the liquid silicon to be dispersed to form a layer of thin film; the thin film is solidified downwards to form a crystal thin silicon wafer; annealing the thin silicon wafer, then diffusing to form a pn junction, and annealing the pn junction to form a silicon wafer;
preparing a battery piece by using the silicon chip: forming an antireflection film on the silicon wafer; and manufacturing an electrode on the surface of the antireflection film to form a battery piece.
Further, when mixing the silicon-containing material powder and the silicon compound powder, the mass ratio of the silicon-containing material powder to the silicon compound powder is 50:1 to 1: 50.
Further, the step of coating aluminum oxide on the molding plate to form the substrate comprises the following steps: coating aluminum oxide on the molding plate, and pressing the molding plate into a plate under vacuum and high pressure; sintering and annealing; laser drilling forms the substrate such that the substrate has holes therein.
Further, the step of coating aluminum oxide on the molding plate to form the substrate comprises the following steps: coating aluminum oxide on the forming plate, and die-casting the forming plate into a plate by using a casting mold with holes so that the base plate is provided with the holes; and sintering and annealing to form the substrate.
Further, the method also comprises the step of precisely shaping the substrate.
Further, the electrode on the back surface of the substrate is led out from the hole.
Further, when the thin film is solidified downwards to form the crystal thin silicon wafer, a cold source is arranged on the upper surface of the thin film.
Further, the antireflection film is an ITO film.
Further, the method also includes passivating.
In conclusion, the invention achieves the following technical effects:
1. the utilization rate of the silicon material is improved to more than 90%, compared with the existing mainstream slicing production technology, the polycrystalline silicon produced by adopting the technology can save the polycrystalline silicon material by more than 60%, the processes of ingot casting, squaring, slicing and the like are omitted, the cost of the whole photovoltaic module is reduced by more than 40%, the larger the area of the manufactured battery module is, the lower the cost is, the product can greatly reduce the cost of photovoltaic power generation, the cost reduction of the solar battery module is pulled, the healthy and rapid development of the solar photovoltaic industry in China is supported, the popularization of the photovoltaic power generation is promoted, and the flat-price internet of the photovoltaic power generation is realized early;
2. the silicon wafer used by the photovoltaic module in the traditional process is subjected to complicated processes of ingot casting, squaring, surface grinding, chamfering, slicing and the like, the material consumption cost is high, the production efficiency is low and the like, and the whole process lasts for about 6-7 days; according to the battery piece produced by the invention, a silicon chip is directly formed on the substrate by adopting the on-substrate chip throwing technology, the time is from several seconds to dozens of seconds according to the thickness of the formed silicon chip, the process is simple, and the cost is low;
3. the invention has the advantages of less process links, short time consumption and short manufacturing period;
4. the thickness of the silicon wafer is 10-2000 um, the yield of the battery is increased, and the broken material is greatly reduced.
Drawings
Fig. 1 is a flow chart of a battery cell manufacturing process according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
As shown in fig. 1, a method for preparing a battery plate includes the following steps: (1) preparing a substrate, (2) preparing a silicon wafer on the substrate, and (3) preparing a battery piece by utilizing the silicon wafer.
In (1) preparing the substrate, first, a powder of a silicon-containing material and/or a powder of a silicon compound is mixed and then preformed, and alumina is coated on a molding plate to form the substrate.
In the process, three preforming modes are provided, namely, silicon-containing material powder preforming, silicon compound powder preforming and mixing of the silicon-containing material powder and the silicon compound powder for preforming. Currently, the companies commonly use a first and a third way, in the first way, for example, a silicon nitride powder preform is used, and in the third way, for example, a silicon carbide powder and silicon dioxide powder mixed preform is used. And coating aluminum oxide after preforming.
After coating the aluminum oxide, a base material is formed, and then a substrate is formed through a subsequent process. The subsequent processes comprise pressing into a plate under vacuum and high pressure, sintering and annealing, and laser tapping to form a substrate, and die casting into a plate by using a casting mold with holes and sintering and annealing to form a substrate. In any process, after the substrate is formed, a plurality of holes are arranged on the substrate to prepare for subsequent electrode extraction.
The complete steps of the two processes described above are given in this example (taking the third preforming method as an example):
the first process is that the silicon-containing material powder and the silicon compound powder are mixed and preformed, aluminum oxide is coated on a forming plate, and the plate is pressed under vacuum and high pressure; sintering and annealing; laser drilling is carried out to form a substrate, so that holes are formed in the substrate;
the second process is that silicon-containing material powder and silicon compound powder are mixed and preformed, and then are die-cast into a plate by using a casting mould with holes, so that the base plate has holes; and sintering and annealing to form the substrate.
And then, precisely shaping the substrate into a qualified substrate.
The substrate and the silicon chip are integrated, so the substrate can be cut into any shape and size at will.
Thus, the prepared substrate is used for supporting and bedding a silicon wafer manufactured subsequently.
In the step (2) of preparing a silicon wafer on a substrate, injecting liquid silicon on the substrate, and simultaneously rotating the substrate to disperse the liquid silicon to form a layer of film; the film is solidified downwards to form a crystal thin silicon wafer; and annealing the thin silicon wafer, then performing diffusion to form a pn junction, and annealing the pn junction to form the silicon wafer.
In this process, liquid silicon needs to be injected onto the substrate, and one of the methods for injecting liquid silicon is given in this embodiment: the method comprises the steps of placing solid silicon in a container, keeping the temperature of the solid silicon in the container constant, rapidly heating the solid silicon to a temperature higher than the melting point of a silicon material, changing the solid silicon into a liquid silicon material, and pushing the liquid silicon material to a substrate by the container under the assistance of argon gas by utilizing a pipeline. Of course, this is only one of the injection methods of liquid silicon, and other methods may be adopted in practical use, taking care to control the melting point temperature of silicon and the argon atmosphere of silicon.
After injecting liquid silicon on the substrate, the substrate is rotated to form a thin film, and this embodiment also provides one of the following ways: in the argon atmosphere, the substrate is rotated by servo drive or the like, and the rotation speed and rotation time of the substrate are controlled to disperse the liquid silicon at a certain speed and time. For example, when the speed and the time of the substrate are controlled, the speed is changed from slow to fast in the embodiment, and the set rotating speed is reached within 1-10 seconds, the rotating speed range is as follows: 300 to 5000 rpm. Of course, this is only one of the rotation modes and one of the rotation speed ranges, and other modes can be adopted in practical use, so that the liquid silicon can be dispersed.
After the thin film is formed by rotating and dispersing, the thin film is required to be solidified to form a crystal thin silicon wafer, and one of the solidification modes is also given in the embodiment: the mode of arranging a cold source on the upper surface of the film is adopted. Wherein the cold source is solid or inert gas with the temperature lower than 1000 ℃. The film is solidified from the surface downwards, so that the melted silicon material forms a p-type or n-type layer of crystal thin silicon wafer on the substrate material. The formed silicon wafers are uniform in thickness and are polycrystalline or monocrystalline thin silicon wafers.
After forming a p-type or n-type crystal thin silicon wafer, the crystal thin silicon wafer is subjected to an annealing treatment.
When the thin silicon wafer on the substrate is of a p type, carrying out diffusion by taking phosphorus as a diffusion source to form a pn junction; and when the thin silicon wafer on the substrate is of an n type, carrying out diffusion by taking boron as a diffusion source to form a pn junction.
And annealing the substrate thin silicon wafer with the pn junction formed to form a silicon wafer.
In the formed silicon wafer, the silicon wafer is directly grown on a substrate, and the substrate is used as a support without an additional back plate support.
The silicon chip and the substrate are integrated, the silicon chip is a monocrystalline silicon chip or a polycrystalline silicon chip, and the thickness of the silicon chip is 10-2000 um.
Thus, the silicon wafer prepared on the substrate is used as a bedding for the subsequent preparation of the battery piece.
And (3) in the process of preparing the battery piece by using the silicon chip, forming an antireflection film on the silicon chip, and manufacturing an electrode on the surface of the antireflection film to form the battery piece.
In the process, a layer of antireflection film is formed on the surface of the silicon chip in the embodiment, the antireflection film is an ITO film, and main parameters of the ITO film on the surface include low resistance, resistance uniformity, high light transmittance, thermal stability and the like. The solar cell has the effects of increasing the light absorption of the solar cell, reducing reflection, reducing series resistance and improving short-circuit current (Isc). When the electrode is manufactured, the electrode on the back of the substrate is led out from the hole through the substrate, the material is Ag, Al or Cu, and the optimal photovoltaic power generation condition is provided. Finally, the manufacturing of the cell and the photovoltaic module after the cell is connected in series is completed through the processes of passivation, detection classification, packaging and the like.
In this embodiment, two manufacturing processes of a complete battery piece are provided, wherein in the two manufacturing processes, a third silicon-containing material powder, for example, silicon carbide powder, and a silicon compound powder, for example, silicon dioxide powder, are mixed and preformed, and the mass ratio of the silicon-containing material powder to the silicon compound powder is 50:1-1: 50.
The first embodiment is as follows:
in the embodiment, the substrate adopts the mixture of silicon carbide powder and silicon dioxide powder, the silicon carbide has the granularity of 400 meshes, the silicon dioxide has the granularity of 350 meshes, the ratio of the silicon carbide to the silicon dioxide is 5:1, and after the silicon carbide and the silicon dioxide are mixed, water is used as a binder to increase the viscosity, so that the rough molding can be conveniently die-cast and molded in a vacuum environment. The thickness of the coating aluminum oxide is 5um, a vacuum powder metallurgy process is adopted, and the pressure is controlled to be 8000kg/cm according to the material proportion2And the pressing temperature is 1200 ℃, and then sintering molding is carried out, wherein the sintering temperature is 1600 ℃, and the sintering time is 40 min. And after the sintering time is finished, gradually reducing the temperature according to the temperature curve so as to remove the stress of the molded substrate.
The thickness of the substrate is 10 mm. The substrate is shaped by a precision machine to be quadrilateral and 210mm in side length. And placing the substrates qualified by visual inspection into a substrate storage cavity, wherein the storage quantity is 1000, the argon pressure in the cavity is 50kPa, and the temperature is 500 ℃. Through an automatic program controlled by a PLC, the substrate at constant temperature and constant pressure is placed by a mechanical arm and an automatic conveying mechanism through a buffer channel and reaches a cavity of the detection substrate.
According to the standard of a detection substrate, qualified substrates in a substrate detection cavity enter a silicon wafer manufacturing cavity, and the substrates are placed on a wafer throwing mechanism platform through a manipulator and fixed on the platform; the ambient temperature of the cavity for manufacturing the silicon wafer is 1380 ℃, and the argon pressure is 60 kPa. 5.2g of quantitative n-type solid silicon material enters a feeding system, the silicon material is heated to 1400 ℃ by laser heating, the silicon material is heated to 1480 ℃ instantly by the laser heating, the solid silicon is changed into liquid silicon, and the liquid silicon is pushed onto a substrate on a flail mechanism platform by pulse argon. The piece speed is got rid of in accurate control, gets rid of the base plate that the piece mechanism drove on the platform and rotates and get rid of the piece, reaches the rotational speed 3200rpm in 3 seconds. An n-type crystal thin silicon wafer is formed on a substrate material, the thickness of the n-type crystal thin silicon wafer is about 49 mu m, and the crystal is polycrystal. The sheet throwing mechanism can adopt a servo motor and other rotary driving devices or other devices capable of driving the substrate to rotate.
And the n-type silicon wafer enters a silicon wafer annealing cavity in the same environment as the silicon wafer, the argon pressure is 60kPa, the temperature is 1380 ℃, when the number of the silicon wafers of the annealing support reaches 1000, the annealing is carried out, the lowest temperature of an annealing curve is 850 ℃, and the annealing time is 30 min. Then the silicon wafer enters a pn junction cavity of the silicon wafer, and the n-type silicon wafer is subjected to boron source diffusion in a diffusion furnace tube, wherein the diffusion depth is 4 microns, so that a pn junction is formed. And (3) annealing the silicon wafer again after the silicon wafer enters the buffer cavity, wherein the flow rate of nitrogen gas is 10l/min, and the cooling rate is about 9 ℃/min. And finally, manufacturing a battery piece: and coating an antireflection film, manufacturing an electrode on the surface of the antireflection film, and forming a battery piece by adopting the traditional electrode and main grid distribution.
Example two:
in the embodiment, the substrate is made of a mixture of silicon carbide and silicon dioxide, the silicon carbide has a particle size of 380 meshes, the silicon dioxide has a particle size of 380 meshes, the ratio of the silicon carbide to the silicon dioxide is 6:1, and after the silicon carbide and the silicon dioxide are mixed, water is used as a binder to increase the viscosity, so that the rough molding can be conveniently die-cast and molded in a vacuum environment. The thickness of the coating aluminum oxide is 6um, a vacuum powder metallurgy process is adopted, and the pressure is controlled to be 10000kg/cm according to the material proportion2And the pressing temperature is 1250 ℃, and then sintering molding is carried out, wherein the sintering temperature is 1600 ℃, and the sintering time is 60 min. And after the sintering time is finished, gradually reducing the temperature according to the temperature curve so as to remove the stress of the molded substrate.
The thickness of the substrate was 12 mm. The substrate is shaped by a precision machine to be a regular hexagon with the side length of 180 mm. And placing the substrates qualified by visual inspection into a substrate storage cavity, wherein the storage quantity is 1000 substrates, the argon pressure in the cavity is 60kPa, and the temperature is 600 ℃. And the substrate is transported from the substrate storage cavity to the substrate detection cavity through an automatic program controlled by a PLC.
According to the standard of a detection substrate, qualified substrates in a substrate detection cavity enter a silicon wafer manufacturing cavity, and the substrates are placed on the appointed position of a wafer throwing mechanism platform through a mechanical arm and are fixed on the platform; the ambient temperature of the cavity for manufacturing the silicon wafer is 1400 ℃, and the argon pressure is 60 kPa. 10g of quantitative n-type solid silicon material enters a feeding system, the temperature of the silicon material is raised to 1400 ℃ by laser heating, the silicon material is heated to 1500 ℃ by the laser heating instantly, the solid silicon is changed into liquid silicon, and the liquid silicon is pushed onto a substrate on a flail mechanism platform by pulse argon. The piece speed is got rid of in accurate control, gets rid of the base plate that the piece mechanism drove on the platform and rotates and get rid of the piece, reaches rotational speed 3500rpm in 3 seconds. An n-type crystal thin silicon wafer is formed on a substrate material, the thickness of the wafer is about 47um, and the crystal is single crystal. The sheet throwing mechanism can adopt a servo motor and other rotary driving devices or other devices capable of driving the substrate to rotate.
And the n-type silicon wafer enters a silicon wafer annealing cavity in the same environment as the silicon wafer, the argon pressure is 60kPa, the temperature is 1400 ℃, when the number of the silicon wafers of the annealing support reaches 1000, the annealing is carried out, the lowest temperature of an annealing curve is 800 ℃, and the annealing time is 35 min. Then the silicon wafer enters a pn junction cavity of the silicon wafer, and the n-type silicon wafer is subjected to boron source diffusion in a diffusion furnace tube, wherein the diffusion depth is 5 microns, so that a pn junction is formed. And (4) annealing the silicon wafer again after the silicon wafer enters the buffer cavity, wherein the flow rate of nitrogen gas is 8l/min, and the cooling rate is about 8 ℃/min. And finally, manufacturing a battery piece: and coating an antireflection film, manufacturing an electrode on the surface of the antireflection film, adopting an annular electrode, and distributing a main grid by adopting an antenna so as to form a battery piece.
After the cell processes of the two embodiments, the non-uniform thickness fresnel lens package assembly is performed to form the photovoltaic module.
And preparing a silicon wafer on the substrate, and finally completing the substrate battery assembly process by the processes of pn junction formation, surface wire electrode formation, surface anti-reflection film and protective layer sputtering, external electrode formation, aging stability and the like. Entering the market after severe quality inspection and classification.
The invention forms a polycrystalline or single crystal ultra-thin columnar high-mobility thin silicon wafer by throwing quantitative silicon materials, and can form a thin p-type or n-type crystal semiconductor of several microns or even thousands of microns by utilizing the characteristics of good fluidity and permeability of liquid silicon, so as to form the semiconductor non-kerf silicon wafer. The thin silicon wafer is more suitable for high-efficiency photovoltaic power generation. Forming a pn junction on the surface of the silicon wafer through p-type or n-type diffusion; then, manufacturing a battery piece by technologies such as reflection prevention, surface electrode and passivation thereof; and finally, detecting, classifying and specially packaging the components. The whole process of the project is physical and chemical, chemical processes are omitted, industrial waste discharge is greatly reduced, and the project is completely environment-friendly theoretically.
The battery provided by the invention can be used for common photovoltaic power generation, and is particularly suitable for photovoltaic battery production technology for isolated power utilization purposes with high power, long service life and low cost under harsh use environment or extreme natural environment which can be used for high-speed movement. According to the process, a plurality of high-cost process links such as a polycrystalline silicon ingot casting (or a single crystal silicon rod is pulled), a polycrystalline silicon ingot squaring (or four arc edges of the single crystal silicon rod are removed), the top and the bottom of the polycrystalline silicon ingot are removed (or the head and the tail of the single crystal silicon rod are cut), a silicon wafer is cut in a linear mode, a photovoltaic cell manufacturing process and a module assembling process of the traditional solar cell module are omitted, the total process time is greatly shortened, and the manufacturing cost of the photovoltaic cell is obviously reduced. The process links of producing waste silicon materials such as ingot casting, squaring, head and tail removing, chamfering and slicing are omitted, so that the utilization rate of the silicon materials can be greatly improved, and the manufacturing cost of the photovoltaic cell is directly reduced.
Compared with the traditional manufacturing process, the following table theoretically has no waste of silicon materials, and saves energy; the manufacturing production is formed in a vacuum or argon environment, and no pollution is caused; the process is simple, and the used time is short; since the solar cell can be easily produced several sheets at a time, the cost for producing the solar cell is greatly reduced, and the productivity is greatly improved. The process is easy for large-scale production, is convenient for large-scale production, has great promotion effect on the research and development of solar cells, and can realize the flat-price network connection of photovoltaic power generation.
Table 1 comparison of the process of the present invention with the conventional process
In addition, the automatic sun inclination angle positioning and the assembly snow removing, cleaning and dust removing system design of the 5G positioning system can be matched.
The ingot photovoltaic module is provided with an automatic program control circuit, is combined with a 5G network positioning system, and is subjected to different operating systems according to different network weather forecasts: in sunny days, the movement track of the sun is tracked, the inclination angle of the photovoltaic module is changed, the sunlight is perpendicular to the cell panel, the sunlight is fully utilized, and the conversion efficiency is improved; in rainy and snowy days in winter, the rain and snow on the surface of the battery plate can be removed in time after the rain and snow are alarmed, and the battery plate is prevented from being frozen and the assembly is damaged; in windstorm weather, dust is removed in time after the windstorm, otherwise, sunlight is influenced to penetrate through the Fresnel lens, and the photoelectric conversion efficiency is reduced. The ingot photovoltaic module can be connected to a national power supply network, and can also be connected to a linkage interface reserved on the photovoltaic module by a storage battery.
The thinnest of a silicon wafer used by a photovoltaic module in the traditional process is 150 micrometers, and if the cut silicon wafer is lower than 150 micrometers, the breaking rate in silicon wafer production and battery piece production is greatly improved, and the manufacturing cost is greatly increased; according to market demands, the technology can form silicon wafers with the thickness of several micrometers to thousands of micrometers, such as silicon wafers with the optimal thickness of 50 micrometers of a photovoltaic module, and the uniformity and the consistency are good.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (9)
1. A preparation method of a battery piece is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
preparing a substrate: mixing silicon-containing material powder and/or silicon compound powder, performing, and coating aluminum oxide on a forming plate to form the substrate;
preparing a silicon wafer on the substrate: injecting liquid silicon onto the substrate, and then rotating the substrate to enable the liquid silicon to be dispersed to form a layer of thin film; the thin film is solidified downwards to form a crystal thin silicon wafer; annealing the thin silicon wafer, then diffusing to form a pn junction, and annealing the pn junction to form a silicon wafer;
preparing a battery piece by using the silicon chip: forming an antireflection film on the silicon wafer; and manufacturing an electrode on the surface of the antireflection film to form a battery piece.
2. The method of claim 1, wherein the mass ratio of the silicon-containing material powder to the silicon compound powder is 50:1 to 1:50 when mixing the silicon-containing material powder and the silicon compound powder.
3. The method for preparing a battery piece according to claim 1, wherein the step of coating aluminum oxide on the molding plate to form the substrate comprises the following steps: coating aluminum oxide on the molding plate, and pressing the molding plate into a plate under vacuum and high pressure; sintering and annealing; laser drilling forms the substrate such that the substrate has holes therein.
4. The method for preparing a battery piece according to claim 1, wherein the step of coating aluminum oxide on the molding plate to form the substrate comprises the following steps: coating aluminum oxide on the forming plate, and die-casting the forming plate into a plate by using a casting mold with holes so that the base plate is provided with the holes; and sintering and annealing to form the substrate.
5. The method as claimed in claim 3 or 4, further comprising fine-shaping the substrate.
6. The method as claimed in claim 3 or 4, wherein the electrode on the back of the substrate is led out from the hole.
7. The method as claimed in claim 6, wherein a cooling source is disposed on the upper surface of the thin film when the thin film is solidified downward to form a thin crystal silicon wafer.
8. The method for preparing the battery piece as claimed in claim 7, wherein the antireflection film is an ITO film.
9. The method of claim 8, further comprising passivating.
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