CN113221489A - Method and apparatus for extracting device model parameters of an integrated circuit device - Google Patents
Method and apparatus for extracting device model parameters of an integrated circuit device Download PDFInfo
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Abstract
The application relates to a method for extracting device model parameters of an integrated circuit device, comprising: providing a test data set for the integrated circuit device; providing an extraction condition setting interface, wherein the extraction condition setting interface comprises a plurality of extraction condition fields, and each extraction condition field corresponds to one test condition; receiving a user input for setting at least one of a plurality of extraction condition fields of the extraction condition setting interface or selecting an extraction condition variable; generating an extraction condition template at least based on the extraction condition variables set or selected by the user input, and screening corresponding test data from the test data set by using the extraction condition template to generate a custom test data set; and fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
Description
Technical Field
The present application relates to the field of computer aided design technology for integrated circuits, and more particularly, to a method and apparatus for extracting device model parameters of an integrated circuit device.
Background
The continuing development of semiconductor and integrated circuit technology has made the importance of Computer Aided Design (CAD) or Electronic Design Automation (EDA) platforms for integrated circuits increasingly important. One fundamental function of the EDA platform is the parameter extraction of the device model, i.e., the extraction of model parameters for semiconductor devices manufactured with a particular integrated circuit fabrication process based on some standard device model. After the model parameters are extracted, various working characteristics of the semiconductor device can be mathematically described by combining with a corresponding standard device model, so that the semiconductor device can be used for device simulation in subsequent circuit design.
The BSIM model is a metal oxide field effect transistor (MOSFET) model developed by berkeley division, university of california, usa, which is suitable for digital and analog circuit design and simulation. In an actual parameter extraction operation, the model parameters of the MOSFET device can be extracted by selecting various BSIM models (e.g., BSIM4, BSIM-Bulk, BSIM-CMG, etc.) corresponding to the actual MOSFET device to process the test data (e.g., I-V curves, C-V curves, etc. of MOSFETs of different sizes) of the MOSFET device.
However, in order to improve the accuracy of the model parameters, the model parameter extraction often needs to process a large amount of test data, so the model parameter extraction operation usually needs to consume a large amount of time and needs to occupy a large amount of computing resources.
Therefore, there is a need for an improved device model parameter extraction method and apparatus.
Disclosure of Invention
An object of the present application is to provide a device model parameter extraction method and apparatus for an integrated circuit device.
According to one aspect of the present application, there is provided a method for extracting device model parameters of an integrated circuit device, comprising: providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions; providing an extraction condition setting interface, wherein the extraction condition setting interface comprises a plurality of extraction condition fields, and each extraction condition field corresponds to one test condition; receiving a user input for setting at least one of a plurality of extraction condition fields of the extraction condition setting interface or selecting an extraction condition variable; generating an extraction condition template at least based on the extraction condition variables set or selected by the user input, and screening corresponding test data from the test data set by using the extraction condition template to generate a custom test data set; and fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
In another aspect of the present application, there is also provided a method for extracting device model parameters of an integrated circuit device, comprising: providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions; receiving a user input for selecting an extraction condition template, the extraction condition template comprising a set of extraction condition variables; screening test data obtained by testing under a group of test conditions which accord with the group of extraction condition variables from the test data set by using the extraction condition template to generate a custom test data set; and fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
The foregoing is a summary of the application that may be simplified, generalized, and details omitted, and thus it should be understood by those skilled in the art that this section is illustrative only and is not intended to limit the scope of the application in any way. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
Drawings
The above-described and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. It is appreciated that these drawings depict only several embodiments of the disclosure and are therefore not to be considered limiting of its scope. The present disclosure will be described more clearly and in detail by using the accompanying drawings.
Fig. 1 shows a schematic diagram of 4 current-voltage curves (in particular output characteristic curves) according to an embodiment of the present application;
FIG. 2 illustrates an extraction condition setting interface according to one embodiment of the present application;
FIG. 3 illustrates a method 300 for extracting device model parameters for an integrated circuit device according to one embodiment of the present application;
FIG. 4 illustrates a method 400 for extracting device model parameters for an integrated circuit device according to one embodiment of the present application.
Detailed Description
In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, like reference numerals generally refer to like parts throughout the various views unless the context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not intended to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter of the present application. It will be understood that aspects of the present disclosure, as generally described in the present disclosure and illustrated in the figures herein, may be arranged, substituted, combined, and designed in a wide variety of different configurations, all of which form part of the present disclosure.
The inventors of the present application have discovered that parameter extraction processes for device models of integrated circuit devices are typically performed by various integrated circuit manufacturing companies based on the integrated circuit processes that they are capable of providing, because the actual performance of the integrated circuit devices they provide depends on the corresponding integrated circuit processes. However, operators of different companies may perform differentiated parameter extraction operations according to personal work experience and software use habits, company parameter extraction requirements, and other factors. In order to meet the difference in the use requirements, the device model parameter extraction software generally provides a considerable number of parameter extraction conditions for operators to select and set, so that the flexibility of the parameter extraction process is improved, the setting operation becomes too cumbersome, the operation setting time is increased, the reusability among different operations is poor, and the standardized parameter extraction condition setting suitable for specific operators or users is difficult to form.
In order to solve the above problem, the inventors of the present application add a parameter extraction condition setting function that can be defined in advance to device model parameter extraction software. Before the software performs the calculation process of the model parameter extraction, the operator of the software may select or set various extraction conditions for the parameter extraction, and may save a set of the selected or set extraction conditions. Thus, after performing a calculation for parameter extraction, if the operator wishes to carry over to the same set of parameter extraction conditions, they can call up the pre-saved extraction conditions before proceeding with the calculation process for the next parameter extraction; or if different operators wish to uniformly adopt a certain parameter extraction process, they only need to share a group of parameter extraction conditions which are stored in advance with each other. This makes it possible to standardize and reuse the parameter extraction process, and also does not reduce the flexibility of condition setting, and the operator can still adjust various conditions of parameter extraction according to individual needs.
It will be appreciated that the method for extracting device model parameters of an integrated circuit device according to embodiments of the present application may be used for a variety of integrated circuit devices and corresponding device models. In some embodiments, the integrated circuit device is a device selected from the group consisting of: MOSFET transistors, SOI (silicon on insulator) transistors, FinFET (fin field effect transistor) transistors, BJT (bipolar junction) transistors, HBT (heterojunction) transistors, TFT (thin film transistor) transistors, MESFET (metal semiconductor contact field effect transistor) transistors, diodes, resistors or inductors, and the like; the device model may be a device model selected from the group consisting of: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM _ HV, PSP, GP-BJT, or RPI TFT. For example, for a MOSFET transistor, its corresponding device model may be BSIM3, BSIM4, BSIM6, or other known standard or non-standard models. It will be appreciated that the device models described above are merely exemplary, and in actual practice, the model corresponding to the integrated circuit device may be selected as desired.
The MOSFET transistor is one of the most commonly used devices in an integrated circuit, and therefore, in the following embodiments of the present application, the integrated circuit device is exemplified as the MOSFET transistor. Those skilled in the art will appreciate that the application of the present application is not so limited.
Table 1 shows some of the main parameters of a BSIM model BSIM 4.6.4 standard for describing the characteristics of MOSFET transistors, the values of which are calculated in a parameter extraction process, i.e. by processing the actual test data of the MOSFET transistor.
TABLE 1 Main parameters of the BSIM 4.6.4 model
After selecting and determining the applicable device model, in order to extract the model parameters, it is also necessary to provide test data corresponding to the integrated circuit device, which is usually obtained by testing the integrated circuit device under different test conditions. In some embodiments, the test conditions may be different dimensions of the integrated circuit device (e.g., different channel lengths, channel widths), different voltage bias conditions (e.g., bias voltage Vbs between body and source, different source and drain voltages Vds, etc.), or different temperature conditions, among others. Different types of test conditions may be combined into a set of test conditions that describe the physical characteristics of the integrated circuit device under test and the test environment, such as the channel length, width, and body bias voltage of the device, among others. It should be noted that the integrated circuit devices described herein do not refer to a specific physical device, but refer to a generic term for a type of device manufactured by the same integrated circuit process. For example, two integrated circuit devices fabricated using the same process but differing only in channel width may be considered the same integrated circuit device.
Testing the integrated circuit device under each set of test conditions may generate corresponding test data, which may include, for example, one or more of a plurality of types of data, such as a current-voltage curve, a capacitance-voltage curve, or a derived electrical parameter. In some embodiments, the test data may be current-voltage curves, and accordingly, the test data set may include one or more current-voltage curves (currents such as drain current Id, gate current Ig, body current Ib, source current Is, etc.). In other words, a plurality of sets of test data tested under test conditions may form a test data set. In the following embodiments, the test data is taken as a current-voltage curve for illustration, but it can be understood by those skilled in the art that in some other embodiments, the test data can be changed or adjusted according to the test conditions and the test requirements when performing the test, and the application is not limited thereto. For example, the derived electrical parameters may include parameters such as Idin, saturation leakage current Idsat, maximum transconductance maxGm, Vtlin, saturation threshold voltage Vtsat, Vtgm, and the like, and may also include electrical output parameters such as Gm, Gds, and the like. For more description of these parameters, reference may also be made to the description in the BSIM model or other models. These electrical parameters may vary with voltage.
Taking a PMOS transistor as an example, the following tests may be generally performed for the device model parameter extraction to be performed:
1) when Vds is-0.05V, testing the change of drain-source current Ids along with the change of a grid voltage under different body bias voltages Vbs, namely testing to obtain linear region transfer characteristic curves under different body bias voltages; the reason why the integrated circuit device to be tested works in the linear region at this time is that Vds (namely drain-source voltage) is-0.05V;
2) when Vds is-Vdd (Vdd is a specific power voltage value), the drain-source current Ids changes with the gate voltage under different body bias voltages Vbs, that is, a saturation region transfer characteristic curve under different body bias voltages is obtained through testing; the integrated circuit device under test operates in the saturation region because Vds is-Vdd;
3) when the body bias voltage Vbs is equal to 0, testing the variation of drain-source current Ids with drain-source voltage Vds under different gate voltages Vgs, namely obtaining an output characteristic curve of the device through testing;
4) when the body bias voltage Vbs is equal to Vbb (Vdd is a specific power supply voltage value), the drain-source current Ids varies with the drain-source voltage Vds under different gate voltages Vgs, that is, the output characteristic curve of the device is obtained through testing.
Fig. 1 shows a schematic diagram of 4 current-voltage curves (specifically, output characteristic curves) according to an embodiment of the present application, wherein the 4 current-voltage curves are different in the body bias voltage applied to the device under test at the time of testing, i.e., -0.36V, -0.72V, -1.08V, and-1.44V, respectively, and the other testing conditions are the same, including a channel width W of 10 micrometers, a channel length L of 10 micrometers, a temperature of 25 degrees celsius, and a drain-source voltage Vds of 0.1V.
It will be appreciated that where different sets of test conditions are provided, a plurality of current-voltage curves similar to the curve shown in figure 1 may be obtained separately. These current-voltage curves constitute a test data set for the integrated circuit device to be parameter extracted.
However, since there are many types of test conditions, and the condition variables that can be set for the same test condition may also be different, for example, the channel length may be 1 micron, 2 microns, 3 microns, 10 microns, 20 microns, 50 microns, 10 microns, etc., and the temperature may be 0 degrees celsius, 5 degrees celsius, 10 degrees celsius, 20 degrees celsius, 25 degrees celsius, 30 degrees celsius, 40 degrees celsius, 50 degrees celsius, etc. The number of combinations of test conditions that are formed after the combination of these different condition variables is numerous. Thus, the number of current-voltage curves tested under a large number of sets of test conditions is quite large, and the resulting test data set is quite large in capacity. Extracting the device model parameters on this basis requires a large amount of computing resources and time.
Therefore, in one embodiment of the present application, a set of test conditions customized by an operator can be obtained by providing an extraction condition setting interface in the device model parameter extraction software, and combining the condition variables input by the operator through the extraction condition setting interface into an extraction condition template. This extraction condition template may be saved for reuse in other model parameter extraction processes. It will be appreciated that the operator may generate a plurality of extraction condition templates for use in different parameter extraction processes, according to the actual requirements of the parameter extraction. Furthermore, in some embodiments, the operator may combine a plurality of extraction condition templates into a set of extraction condition templates, which may respectively correspond to a part of a set of model parameters to be extracted, in other words, different extraction condition templates may be used with emphasis on the extraction of certain model parameters, which splits the parameter extraction task of one device model into a plurality of sub-extraction tasks; since the number of model parameters to be extracted of each sub-extraction task is reduced, and the calculation amount of each sub-extraction task is significantly reduced, even when viewed from the overall sum of the plurality of sub-extraction tasks, the calculation processing time consumed by the sub-extraction tasks is significantly shortened compared with the original parameter extraction processing time without splitting.
FIG. 2 illustrates an extraction condition setting interface according to one embodiment of the present application. As shown in fig. 2, the left side of the extraction condition setting interface includes a plurality of extraction variable fields, such as a minimum channel length Lmin, a maximum channel length Lmax, a minimum channel width Wmin, a maximum channel width Wmax, and the like. In the embodiment shown in fig. 2, the extracted variable field also includes some other selectable predefined variables, as shown in table 2 below, which illustrates some examples of the extracted variable field in fig. 2.
Table 2 some examples of extracting variable fields
Correspondingly, the right side of the extraction condition setting interface comprises a plurality of extraction variable input boxes, and an operator can set or select extraction condition variables corresponding to the extraction variable fields through the input boxes. For example, in fig. 2, the minimum channel length Lmin is set to 0.0, the maximum channel length Lmax is set to 1e4(um), the minimum channel width Wmin is set to 0.0, and the maximum channel width Wmax is set to 1e4 (um). Thus, based on at least the above extraction condition variables, an extraction condition template can be generated that defines a channel length in the range of 0.0 to 1e4(um) and a channel width in the range of 0.0 to 1e4 (um). It will be appreciated that the extraction condition template may also include extraction variable values corresponding to other extraction variable fields, such as temperature values. In some embodiments, the extraction condition setting interface may require that each settable or selectable extraction condition variable be included in the user input provided by the operator, and may display a real-time operation reminder if one or more extraction condition variables are not included in the user input; in other embodiments, the extraction condition setting interface may not require user input to include every settable or selectable extraction condition variable: for the extraction condition variables which are not set or selected, the extraction condition setting interface can take the preset extraction condition variable values as default values, so that a part of the extraction condition variables set or selected by the user is combined with another part of the preset extraction condition variables to generate the corresponding extraction condition template. In some embodiments, the extraction condition template may take the form of a configuration file that stores, for example, a set of extraction condition variables.
In some embodiments, the operator may enter a custom template identification, such as a template name, through the extraction condition setting interface, which may be correlated and stored with the extraction condition template. The custom template identification may make the extraction condition template associated therewith easier to identify. For example, the "name" field in the extraction condition setting interface shown in fig. 2 is set to "3 cerners".
The extraction condition template generated above may be applied to a test data set to screen therefrom a current-voltage curve that meets the extraction conditions specified in the extraction condition template. And then, screening to obtain a set of current-voltage curves which can be used as a custom test data set. Because the non-qualifying current-voltage curves are screened, the custom test data set includes a smaller number of current-voltage curves than the unscreened test data set.
It is to be understood that in some embodiments, a portion of the plurality of current-voltage curves are screened out via extraction condition template screening; in other embodiments, depending on the set extraction conditions, curve segments, i.e. segments of some of the curves, in one or more current-voltage curves are screened out. For example, the gate voltage of the complete output characteristic curve ranges from 0V to 1V, and the segments of the output characteristic curve with gate voltages of 0.9V to 1V can be screened out after screening, and only the segments with gate voltages of 0V to 0.9V are reserved. It should be noted that in actual testing, the test data typically includes only discrete test data (measured at discrete input voltages, such as shown in fig. 1), and thus the curve described herein is essentially a fit curve to the discrete test data.
After the custom test data set is determined, a device model of the integrated circuit device may be fitted with the custom test data set to generate device model parameters for the integrated circuit device. As for a specific device model parameter extraction method, any method that is currently available or will be suitable in the future may be used, and the present application is not limited thereto or thereby. Because the test data included in the custom test data set is less than the original test data set, the calculation resources and time required for model fitting and parameter extraction calculation are greatly reduced, and the processing efficiency is effectively improved.
As previously described, the extraction condition templates generated via operator settings may be saved for sharing to other operators or for later use. Accordingly, in some embodiments, the stored extraction condition template may be invoked to filter other test data sets and generate another custom test data set. The device model of the integrated circuit device may then be fitted with this custom test data set to generate corresponding device model parameters.
FIG. 3 illustrates a method 300 for extracting device model parameters for an integrated circuit device according to one embodiment of the present application. The method 300 involves the process of setting an extraction condition template. As shown in fig. 3, the method 300 includes:
at step 302, providing a test data set for the integrated circuit device, the test data set including a plurality of current-voltage curves resulting from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
at step 304, providing an extraction condition setting interface, wherein the extraction condition setting interface comprises a plurality of extraction condition fields, and each extraction condition field corresponds to one test condition;
at step 306, receiving a user input for setting at least one of a plurality of extraction condition fields of the extraction condition setting interface or selecting an extraction condition variable;
at step 308, generating an extraction condition template based on at least the extraction condition variables set or selected by the user input, and screening the corresponding current-voltage curve from the test data set by using the extraction condition template to generate a custom test data set; and
at step 310, a device model of the integrated circuit device is fitted with the custom test data set to generate device model parameters for the integrated circuit device.
In some embodiments, the integrated circuit device is a field effect transistor and the current-voltage curve includes an input characteristic curve and a transfer characteristic curve.
In some embodiments, the integrated circuit device is a device selected from the group consisting of: a MOSFET transistor, SOI transistor, FinFET transistor, BJT transistor, HBT transistor, TFT transistor, MESFET transistor, diode, resistor, or inductor.
In some embodiments, the device model of the integrated circuit device is a device model selected from the group consisting of: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM _ HV, PSP, GP-BJT, or RPI TFT.
In some embodiments, the step of generating an extraction condition template based at least on the extraction condition variables set or selected by the user input further comprises: providing preset extraction condition variables for extraction condition fields which are not set or selected by user input in the plurality of extraction condition fields; and combining the preset extraction condition variables with the extraction condition variables set or selected by the user to generate the extraction condition template.
In some embodiments, the method further comprises: providing a self-defined template identifier; and associating the self-defined template identification with the extraction condition template, and storing the extraction condition template.
In some embodiments, the custom test data set includes a portion of a plurality of current-voltage curves of the test data set and/or includes a curve segment of one or more current-voltage curves.
FIG. 4 illustrates a method 400 for extracting device model parameters for an integrated circuit device according to one embodiment of the present application. The method 400 involves a process that uses a pre-saved extraction condition template. As shown in fig. 4, the method 400 includes:
at step 402, providing a test data set for the integrated circuit device, the test data set including a plurality of current-voltage curves resulting from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
at step 404, receiving a user input for selecting an extraction condition template, the extraction condition template comprising a set of extraction condition variables;
at step 406, screening a set of current-voltage curves tested under a set of test conditions that meet the set of extraction condition variables from the test dataset using the extraction condition template to generate a custom test dataset; and
at step 408, a device model of the integrated circuit device is fitted with the custom test data set to generate device model parameters of the integrated circuit device.
In some embodiments, the present application also provides computer program products comprising a non-transitory computer readable storage medium. The non-transitory computer readable storage medium includes computer executable code for performing the steps in the method embodiments illustrated in fig. 3 or fig. 4.
Embodiments of the present application may be implemented by hardware, software, or a combination of software and hardware. The hardware portion may be implemented using dedicated logic; the software portions may be stored in a memory and executed by a suitable instruction execution system, such as a microprocessor or specially designed hardware. Those skilled in the art will appreciate that the apparatus and methods described above may be implemented using computer executable instructions and/or embodied in processor control code, such code being provided on a carrier medium such as a disk, CD-or DVD-ROM, programmable memory such as read only memory (firmware), or a data carrier such as an optical or electronic signal carrier, for example. The devices and their modules of the present application may be implemented by hardware circuits such as very large scale integrated circuits or gate arrays, semiconductors such as logic chips, transistors, or programmable hardware devices such as field programmable gate arrays, programmable logic devices, etc., or by software executed by various types of processors, or by a combination of hardware circuits and software, such as firmware.
It should be noted that although in the above detailed description several modules or sub-modules, steps or sub-steps of a method or apparatus for extracting device model parameters of an integrated circuit device are mentioned, such partitioning is merely exemplary and not mandatory. Indeed, according to embodiments of the application, the features and functions of two or more modules described above may be embodied in one module. Conversely, the features and functions of one module described above may be further divided into embodiments by a plurality of modules.
Other variations to the disclosed embodiments can be understood and effected by those skilled in the art from a study of the specification, the disclosure, the drawings, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the words "a" or "an" do not exclude a plurality. In the practical application of the present application, one element may perform the functions of several technical features recited in the claims. Any reference signs in the claims shall not be construed as limiting the scope.
Claims (19)
1. A method for extracting device model parameters for an integrated circuit device, the method comprising:
providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
providing an extraction condition setting interface, wherein the extraction condition setting interface comprises a plurality of extraction condition fields, and each extraction condition field corresponds to one test condition;
receiving a user input for setting at least one of a plurality of extraction condition fields of the extraction condition setting interface or selecting an extraction condition variable;
generating an extraction condition template at least based on the extraction condition variables set or selected by the user input, and screening corresponding test data from the test data set by using the extraction condition template to generate a custom test data set; and
fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
2. The method of claim 1, wherein the test data comprises one or more of a current-voltage curve, a capacitance-voltage curve.
3. The method of claim 2, wherein the integrated circuit device is a field effect transistor and the current-voltage curve comprises an input characteristic curve and a transfer characteristic curve.
4. The method of claim 1, wherein the test data comprises a derived electrical output parameter versus voltage curve.
5. The method of claim 1, wherein the integrated circuit device is a device selected from the group consisting of: a MOSFET transistor, SOI transistor, FinFET transistor, BJT transistor, HBT transistor, TFT transistor, MESFET transistor, diode, resistor, or inductor.
6. The method of claim 5, wherein the device model of the integrated circuit device is a device model selected from the group consisting of: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM _ HV, PSP, GP-BJT, or RPITFT.
7. The method of claim 1, wherein the step of generating an extraction condition template based on at least the extraction condition variables set or selected by the user input further comprises:
providing preset extraction condition variables for extraction condition fields which are not set or selected by user input in the plurality of extraction condition fields; and
and combining the preset extraction condition variables with the extraction condition variables set or selected by the user to generate the extraction condition template.
8. The method of claim 1, further comprising:
providing a self-defined template identifier; and
and associating the self-defined template identification with the extraction condition template, and storing the extraction condition template.
9. The method of claim 1, wherein the test data comprises a voltage-current curve, and wherein the custom test data set comprises a portion of a plurality of current-voltage curves of the test data set and/or comprises one or more curve segments of a current-voltage curve.
10. A method for extracting device model parameters for an integrated circuit device, the method comprising:
providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
receiving a user input for selecting an extraction condition template, the extraction condition template comprising a set of extraction condition variables;
screening test data obtained by testing under a group of test conditions which accord with the group of extraction condition variables from the test data set by using the extraction condition template to generate a custom test data set; and
fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
11. The method of claim 10, wherein the test data comprises one or more of a current-voltage curve, a capacitance-voltage curve, a KOP.
12. The method of claim 11, wherein the integrated circuit device is a field effect transistor and the current-voltage curve comprises an input characteristic curve and a transfer characteristic curve.
13. The method of claim 10, wherein the test data comprises a derived electrical output parameter versus voltage curve.
14. The method of claim 10, wherein the integrated circuit device is a device selected from the group consisting of: a MOSFET transistor, SOI transistor, FinFET transistor, BJT transistor, HBT transistor, TFT transistor, MESFET transistor, diode, resistor, or inductor.
15. The method of claim 14, wherein the device model of the integrated circuit device is a device model selected from the group consisting of: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM _ HV, PSP, GP-BJT, or RPITFT.
16. The method of claim 10, wherein the test condition template comprises a combination of one or more preset test condition variables and test condition variables set or selected by a user, or only a combination of extracted condition variables for setting or selection.
17. The method of claim 10, wherein the test data comprises a voltage-current curve, and wherein the custom test data set comprises a portion of a plurality of current-voltage curves of the test data set and/or comprises one or more curve segments of a current-voltage curve.
18. An apparatus for extracting device model parameters for an integrated circuit device, the apparatus comprising a non-transitory computer storage medium having one or more executable instructions stored thereon, the one or more executable instructions upon execution by a processor performing the steps of:
providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
providing an extraction condition setting interface, wherein the extraction condition setting interface comprises a plurality of extraction condition fields, and each extraction condition field corresponds to one test condition;
receiving a user input for setting at least one of a plurality of extraction condition fields of the extraction condition setting interface or selecting an extraction condition variable;
generating an extraction condition template at least based on the extraction condition variables set or selected by the user input, and screening corresponding test data from the test data set by using the extraction condition template to generate a custom test data set; and
fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
19. An apparatus for extracting device model parameters for an integrated circuit device, the apparatus comprising a non-transitory computer storage medium having one or more executable instructions stored thereon, the one or more executable instructions upon execution by a processor performing the steps of:
providing a test data set for the integrated circuit device, the test data set including a plurality of test data from testing the integrated circuit device under a plurality of sets of test conditions, wherein each set of test conditions includes a combination of a plurality of test conditions;
receiving a user input for selecting an extraction condition template, the extraction condition template comprising a set of extraction condition variables;
screening test data obtained by testing under a group of test conditions which accord with the group of extraction condition variables from the test data set by using the extraction condition template to generate a custom test data set; and
fitting a device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115062571A (en) * | 2022-05-06 | 2022-09-16 | 上海概伦电子股份有限公司 | Dynamic selection method, system, equipment and computer readable storage medium for data area of integrated circuit device |
| WO2023207184A1 (en) * | 2022-04-29 | 2023-11-02 | 上海概伦电子股份有限公司 | Data selection method, system and apparatus for extracting device model parameters of integrated circuit |
| WO2024060454A1 (en) * | 2022-09-22 | 2024-03-28 | 上海概伦电子股份有限公司 | Parameter calculation assistance method and system, device, and storage medium |
| WO2024060453A1 (en) * | 2022-09-22 | 2024-03-28 | 上海概伦电子股份有限公司 | Model parameter extraction method of integrated circuit device, device and storage medium |
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| WO2023207184A1 (en) * | 2022-04-29 | 2023-11-02 | 上海概伦电子股份有限公司 | Data selection method, system and apparatus for extracting device model parameters of integrated circuit |
| CN115062571A (en) * | 2022-05-06 | 2022-09-16 | 上海概伦电子股份有限公司 | Dynamic selection method, system, equipment and computer readable storage medium for data area of integrated circuit device |
| WO2023213094A1 (en) * | 2022-05-06 | 2023-11-09 | 上海概伦电子股份有限公司 | Dynamic data area selection method, system and device applied to integrated circuit device, and computer-readable storage medium |
| WO2024060454A1 (en) * | 2022-09-22 | 2024-03-28 | 上海概伦电子股份有限公司 | Parameter calculation assistance method and system, device, and storage medium |
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