CN113219587A - Integrated polarization beam splitter based on silicon-silicon dioxide-silicon nitride structure - Google Patents
Integrated polarization beam splitter based on silicon-silicon dioxide-silicon nitride structure Download PDFInfo
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- CN113219587A CN113219587A CN202110564629.9A CN202110564629A CN113219587A CN 113219587 A CN113219587 A CN 113219587A CN 202110564629 A CN202110564629 A CN 202110564629A CN 113219587 A CN113219587 A CN 113219587A
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- 230000010287 polarization Effects 0.000 title claims abstract description 92
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 36
- PNBPGDKNNUJQGC-UHFFFAOYSA-N [Si].[Si].O=[Si]=O Chemical compound [Si].[Si].O=[Si]=O PNBPGDKNNUJQGC-UHFFFAOYSA-N 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 76
- 238000005253 cladding Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses an integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure, which comprises an input waveguide, a polarization beam splitting waveguide, a first output waveguide and a second output waveguide, wherein the input waveguide is connected with one end of the polarization beam splitting waveguide, the other end of the polarization beam splitting waveguide is respectively connected with the first output waveguide and the second output waveguide, the polarization beam splitting waveguide is of a three-layer structure formed by silicon-silicon dioxide-silicon nitride which is sequentially distributed from bottom to top, and a silicon nitride layer on the upper part of the polarization beam splitting waveguide and a silicon dioxide layer on the middle part of the polarization beam splitting waveguide have the same width and are smaller than the silicon layer on the lower part of the polarization beam splitting waveguide. In the polarization beam splitting waveguide, the TE mode is mainly distributed on the lower silicon layer, and the TM mode is mainly distributed on the middle silicon dioxide layer, so that the two modes are transmitted separately, the interference of different channels is reduced, and the polarization extinction ratio is greatly improved.
Description
Technical Field
The invention relates to the technical field of polarization beam splitters, in particular to an integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure.
Background
With the gradual application of 5G technology and the development of high-speed optical interconnection of data centers, large-scale photonic integration becomes the development direction in the future. In recent years, photonic integrated circuits based on silicon-on-insulator (SOI) platforms have begun to gain widespread interest and application. The SOI optical waveguide device can limit an optical field to a core layer well due to the characteristic of ultrahigh refractive index difference between silicon dioxide and silicon, so that the cross section of the device with submicron size and waveguide bending with small radius can be realized. However, SOI-based photonic integrated systems are sensitive to the polarization state of light, i.e., they respond differently to the Transverse Electric (TE) and Transverse Magnetic (TM) modes of the transmitted light, and thus control and management of the polarization state of light is important. A polarizing beam splitter is indispensable in an SOI integrated optical system as an optical device capable of effectively separating TE and TM modes. For this reason, numerous polarization beam splitting device schemes have been proposed, including a directional coupler type, a multi-mode interference (MMI) type, a photonic crystal type, a surface plasmon type, etc., wherein the MMI type polarization beam splitter is one of the main structures for constructing the polarization beam splitter due to its simple structure and large manufacturing tolerance.
However, the length of MMI-based polarization splitters is generally determined by the common multiple of the self-mirror lengths of the TE and TM polarizations, and thus the length of such devices is generally relatively long, which is not conducive to large-scale photonic integration. Therefore, how to be able to significantly reduce the size of MMI polarization splitting devices is a goal of future development.
Disclosure of Invention
To solve the above problems, the present invention provides an integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure comprises an input waveguide, a polarization beam splitting waveguide, a first output waveguide and a second output waveguide, wherein the input waveguide is connected with one end of the polarization beam splitting waveguide, the other end of the polarization beam splitting waveguide is respectively connected with the first output waveguide and the second output waveguide, the polarization beam splitting waveguide is of a three-layer structure formed by silicon-silicon dioxide-silicon nitride which is distributed from bottom to top in sequence, and a silicon nitride layer on the upper portion of the polarization beam splitting waveguide is as wide as a silicon dioxide layer in the middle portion and is smaller than a silicon layer on the lower portion.
Further, the input waveguide and the first output waveguide are three-layer structures formed by silicon-silicon dioxide-silicon nitride which are sequentially distributed from bottom to top, and the three-layer structures correspond to the three-layer structures of the polarization beam splitting waveguide one to one.
Further, one side of the silicon nitride layer, the silicon dioxide layer and the silicon layer is vertically aligned.
Furthermore, the thickness of the silicon layer is 80-180 nanometers, the thickness of the silicon dioxide layer is 40-80 nanometers, and the thickness of the silicon nitride layer is 150-400 nanometers.
Furthermore, the second output waveguide is of a single-layer silicon structure, is in an S-shaped bent shape, and is connected with the silicon layer at the lower part of the polarization beam splitting waveguide.
The polarization beam splitter further comprises a cladding layer, and the cladding layer is cladded outside the input waveguide, the polarization beam splitting waveguide, the first output waveguide and the second output waveguide.
Further, the bottom of the integrated polarization beam splitter is disposed on a silicon dioxide substrate.
Compared with the prior art, the invention has the beneficial effects that:
1. the TE mode in the input optical signal of the integrated polarization beam splitter provided by the invention is mainly distributed in the lower silicon layer of the polarization beam splitting waveguide, and only a little light is distributed in the silicon dioxide layer and the silicon nitride layer. The TE mode thus passes through the multimode interference of the silicon layer and can be output through the second output waveguide at its self-mirror length. While the input TM mode is distributed mainly in the silica layer and will remain transmitted in the silica layer and output through the first output waveguide. Therefore, the length of the polarization beam splitting waveguide only needs to be equal to the self-mirror length of the TE mode in the silicon layer, and the common multiple condition of the self-mirror lengths of the TE mode and the TM mode does not need to be met. Therefore, the length of the device can be greatly reduced, and the integration level of the device is improved.
2. The TE modes of the integrated polarization beam splitter provided by the invention are mainly distributed in the lower silicon layer, and because the silicon layer is wider, a high-order mode exists, and multiple modes generate a multi-mode interference phenomenon, and images of the TE modes can be generated at the cross port and output. And TM polarization is mainly distributed in the middle silicon dioxide layer, only a basic mode exists, multi-mode interference cannot occur, and therefore transmission at a through port is maintained. The two modes are separately transmitted, the interference of different channels is reduced, and the polarization extinction ratio is greatly improved.
3. The device of the invention is compatible with mature CMOS processing technology, can realize monolithic integration with other silicon photonic devices, and has important significance for the development of silicon photonics.
Drawings
FIG. 1 is a top view of an integrated polarization beam splitter based on silicon-silicon dioxide-silicon nitride in an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A' of FIG. 1;
FIG. 3 is a diagram illustrating an electric field distribution of a fundamental mode of a TE mode in an input waveguide according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating an electric field distribution of a fundamental mode of a TM mode in an input waveguide according to an embodiment of the present invention;
FIGS. 5(a) to 5(c) are electric field distribution diagrams of a fundamental mode, a first-order mode and a second-order mode of a TE mode in the polarization splitting waveguide according to the embodiment of the present invention, respectively;
FIG. 6 is a diagram illustrating an electric field distribution of a fundamental mode of a TM mode in a polarization splitting waveguide according to an embodiment of the present invention;
fig. 7(a) and 7(b) are optical field transmission conditions at the fundamental mode input of TE and TM modes, respectively, according to an embodiment of the present invention.
In the figure: 100. an input waveguide; 200. a polarizing beam splitting waveguide; 201. a silicon nitride layer; 202. a silicon dioxide layer; 203. a silicon layer; 300. a first output waveguide; 400. a second output waveguide; 500. a cladding layer; 600. a silicon dioxide substrate.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The embodiment of the invention provides an integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure, and please refer to fig. 1 and 2, the integrated polarization beam splitter comprises an input waveguide 100, a polarization beam splitting waveguide 200, a first output waveguide 300 and a second output waveguide 400, the input waveguide 100 is connected with one end of the polarization beam splitting waveguide 200, the other end of the polarization beam splitting waveguide 200 is respectively connected with the first output waveguide 300 and the second output waveguide 400, the polarization beam splitting waveguide 200 is a three-layer structure formed by silicon-silicon dioxide-silicon nitride which is sequentially distributed from bottom to top, wherein a silicon nitride layer 201 on the upper part of the polarization beam splitting waveguide 200 and a silicon dioxide layer 202 on the middle part of the polarization beam splitting waveguide are the same in width and smaller than a silicon layer 203 on the lower part of the polarization beam splitting waveguide. One side of the silicon nitride layer 201, the silicon dioxide layer 202, and the silicon layer 203 are vertically aligned.
The integrated polarization beam splitter of the present embodiment further includes a cladding 500, the cladding 500 is clad on the outer sides of the input waveguide 100, the polarization beam splitting waveguide 200, the first output waveguide 300, and the second output waveguide 400, and the bottom of the integrated polarization beam splitter is disposed on the silica substrate 600.
In this embodiment, the input waveguide 100 and the first output waveguide 300 are also three-layer structures formed by silicon-silicon dioxide-silicon nitride distributed in sequence from bottom to top, and correspond to the polarization beam splitting waveguides 200 one to one. The second output waveguide 400 is a single-layer silicon structure, has an S-shaped curved shape, corresponds to the silicon layer 203 on the lower portion of the polarization splitting waveguide 200, and can accommodate only the fundamental mode. The input waveguide 100, the first output waveguide 300 and the second output waveguide 400 have equal widths, all of which are 400nm, to ensure single-mode transmission. The width of the silicon layer 203 of the polarization beam splitting waveguide 200 is 1200nm, and a plurality of guided wave modes are supported; the silicon dioxide layer 202 and the silicon nitride layer 201 each have a width of 400nm, which is the same as the input waveguide 100 and the first output waveguide 300. The heights of the silicon layer 203, the silicon dioxide layer 202 and the silicon nitride layer 201 of the entire device are 100nm, 50nm and 200nm, respectively.
In the input waveguide 100, due to the high refractive index difference at the material boundary, discontinuities will occur in the electric field component perpendicular to the boundary, making the mode distributions of TE and TM polarizations quite different from those of a normal silicon line waveguide. Referring to fig. 3 and 4, the TE mode is mainly distributed in the silicon layer, and the TM mode is mainly distributed in the silicon dioxide layer 202 in the middle. Therefore, the TE and TM modes are naturally transmitted in different material layers, with different propagation constants and effective refractive indices, facilitating the separation of the two polarization states.
The polarization beam splitting waveguide 200 is a three-layer structure in which the width of the lowermost silicon layer is increased on the basis of the three-layer structure of the input waveguide 100 to form a silicon layer 203, a silicon dioxide layer 202, and a silicon nitride layer 201. The structure can carry 3 TE polarization guided wave modes, namely TE0, TE1 and TE2 modes, which are mainly distributed in the area of the silicon layer 203, as shown in FIGS. 5(a) to 5 (c). While for TM polarization, the structure supports only the fundamental mode TM0, the mode of which is predominantly distributed in the silicon dioxide layer 202, as shown in fig. 6.
The transmission characteristics of an optical signal in the polarization beam splitter described in the embodiment are as follows: an input signal containing TE and TM modes is input from the input waveguide 100, the TE modes are mainly distributed in the silicon layer 203 and transmitted into the polarization splitting waveguide 200. The TE mode induces three TE guided modes in the polarization beam splitting waveguide 200, and generates a multi-mode interference phenomenon. According to the principle of multi-mode interference, when the polarization waveguide length is equal to the beat length of the TE mode, an image of the TE mode is generated at the crossing output end and output through the second output waveguide 400.
On the other hand, the TM mode is mainly distributed in the silica layer 202 when entering the input waveguide 100, and the TM fundamental mode is induced after entering the polarization beam splitting waveguide 200 and is mainly distributed in the silica layer 202. Because of the mode mismatch, the TM fundamental mode does not couple with other modes and therefore remains propagating in the silicon dioxide layer 202 and eventually exits through the first output waveguide 300. Thus, effective separation of the TE and TM polarization states is achieved. Since the second output waveguide 400 is an S-shaped waveguide and the distance from the first output waveguide 300 is gradually increased, the modes transmitted in the two waveguides are not coupled to each other, so that the TE and TM modes each have a high extinction ratio.
Fig. 7(a) -7 (b) are the transmission of TE and TM polarization modes, respectively, in this example. The TE polarization inputted from the input waveguide 100 generates a multi-mode interference effect in the polarization splitting waveguide 200, and is outputted from the cross output waveguide. The TM polarization input from the input waveguide 100 remains single mode transmission in the polarization splitting waveguide 200, and is output from the through output waveguide.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. An integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure, characterized in that: the polarization beam splitting waveguide comprises an input waveguide, a polarization beam splitting waveguide, a first output waveguide and a second output waveguide, wherein the input waveguide is connected with one end of the polarization beam splitting waveguide, the other end of the polarization beam splitting waveguide is respectively connected with the first output waveguide and the second output waveguide, the polarization beam splitting waveguide is of a three-layer structure formed by silicon-silicon dioxide-silicon nitride which is sequentially distributed from bottom to top, and a silicon nitride layer on the upper portion of the polarization beam splitting waveguide is as wide as a silicon dioxide layer in the middle portion and is smaller than a silicon layer on the lower portion.
2. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: the input waveguide and the first output waveguide are three-layer structures formed by silicon-silicon dioxide-silicon nitride which are sequentially distributed from bottom to top, and the three-layer structures correspond to the three-layer structures of the polarization beam splitting waveguide one to one.
3. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: one side of the silicon nitride layer, the silicon dioxide layer and the silicon layer is vertically aligned.
4. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: the thickness of the silicon layer is 80-180 nanometers, the thickness of the silicon dioxide layer is 40-80 nanometers, and the thickness of the silicon nitride layer is 150-400 nanometers.
5. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: the second output waveguide is of a single-layer silicon structure, is in an S-shaped bent shape and is connected with the silicon layer on the lower portion of the polarization beam splitting waveguide.
6. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: the polarization beam splitter further comprises a cladding layer, and the cladding layer is cladded outside the input waveguide, the polarization beam splitting waveguide, the first output waveguide and the second output waveguide.
7. The integrated polarization beam splitter based on a silicon-silicon dioxide-silicon nitride structure of claim 1, wherein: the bottom of the integrated polarization beam splitter is arranged on the silicon dioxide substrate.
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| CN202110564629.9A CN113219587A (en) | 2021-05-24 | 2021-05-24 | Integrated polarization beam splitter based on silicon-silicon dioxide-silicon nitride structure |
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- 2021-05-24 CN CN202110564629.9A patent/CN113219587A/en active Pending
Non-Patent Citations (3)
| Title |
|---|
| SUN, X等: "Compact and broadband polarization beam splitter based on a silicon nitride augmented low-index guiding structure", 《OPTICS LETTERS》 * |
| XIAOWEI GUAN等: "Extremely small polarization beam splitter based on a multimode interference coupler with a silicon hybrid plasmonic waveguide", 《OPTICS LETTERS》 * |
| YANG LIU 等: "Polarization beam splitter based on a silicon nitride–silica–silicon horizontal slot waveguide", 《OPTICS LETTERS》 * |
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