CN113214741A - High-stability CMP polishing solution - Google Patents
High-stability CMP polishing solution Download PDFInfo
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- CN113214741A CN113214741A CN202110444766.9A CN202110444766A CN113214741A CN 113214741 A CN113214741 A CN 113214741A CN 202110444766 A CN202110444766 A CN 202110444766A CN 113214741 A CN113214741 A CN 113214741A
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- polishing
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- polyether polyol
- polishing solution
- hydroxybutyric acid
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- 238000005498 polishing Methods 0.000 title claims abstract description 154
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 55
- 229920000570 polyether Polymers 0.000 claims abstract description 55
- 229920005862 polyol Polymers 0.000 claims abstract description 55
- 150000003077 polyols Chemical class 0.000 claims abstract description 55
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000004094 surface-active agent Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 39
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 34
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 20
- 125000000129 anionic group Chemical group 0.000 claims description 17
- 229920002401 polyacrylamide Polymers 0.000 claims description 17
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 11
- 239000002002 slurry Substances 0.000 claims description 10
- 239000004408 titanium dioxide Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- -1 sodium alkyl benzene Chemical class 0.000 claims description 9
- 229940077388 benzenesulfonate Drugs 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical group [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 5
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- HEBRGEBJCIKEKX-UHFFFAOYSA-M sodium;2-hexadecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HEBRGEBJCIKEKX-UHFFFAOYSA-M 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920000289 Polyquaternium Polymers 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 description 1
- AXURXPXGTBQYGB-UHFFFAOYSA-N C1(=CC=CC=C1)S(=O)(=O)O.C(CCCCCCCCCCCCCCC)[Na] Chemical compound C1(=CC=CC=C1)S(=O)(=O)O.C(CCCCCCCCCCCCCCC)[Na] AXURXPXGTBQYGB-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000003863 ammonium salts Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000825 pharmaceutical preparation Substances 0.000 description 1
- 229940127557 pharmaceutical product Drugs 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The application relates to the field of chemical mechanical polishing, and particularly discloses a high-stability CMP polishing solution. The high-stability CMP polishing solution comprises, by weight, 20-50 parts of an abrasive, 0.3-8 parts of a pH regulator, 2-5 parts of polyether polyol, 0.005-0.008 part of hydroxybutyric acid, 0.01-0.15 part of a surfactant and the balance of water per 100 parts of the polishing solution. The high-stability CMP polishing solution has the advantage of high polishing rate stability.
Description
Technical Field
The present application relates to the field of chemical mechanical polishing, and more particularly, to a highly stable CMP slurry.
Background
Semiconductor materials are mainly silicon materials, and are one of the most important basic functional materials in the electronic information industry. The semiconductor material has an extremely important position in national economy and military industry in China, and more than 95 percent of semiconductor devices in the world are prepared from silicon materials. In processing semiconductor materials, it is often necessary to process silicon materials into silicon wafers and polish the silicon wafers before proceeding with subsequent processes.
In order to secure the polishing processing accuracy of the silicon wafer, it is necessary to perform Chemical Mechanical Polishing (CMP) on the silicon wafer. Chemical Mechanical Polishing (CMP) is used for polishing silicon wafers of base materials in integrated circuits and ultra-large scale integrated circuits, and CMP polishing solution greatly influences the polishing quality of the silicon wafers in the polishing process.
The CMP slurry generally comprises an abrasive, a PH adjuster, an oxidizing agent, a dispersing agent, and deionized water as additives. The traditional polishing solution has the problems of residual stress, low polishing rate and the like. In order to improve the polishing quality, enterprises are dedicated to research high-quality polishing solutions. At present, Chinese patent with publication number CN107043599A proposes a silicon wafer polishing solution, which comprises 20 parts of silica sol abrasive, 0.1 part of hexahydroxypropyl propane diamine, 2 parts of tetrahydroxyethyl ethylene diamine, 0.1 part of alkylolamide and 80 parts of deionized water by weight.
In view of the above-mentioned related art, the inventors found in practical use that: the polishing rate of the above-mentioned polishing liquid is poor in stability.
Disclosure of Invention
In order to improve the stability of the polishing rate of the CMP polishing solution, the application provides the CMP polishing solution with high stability.
The high-stability CMP polishing solution provided by the application adopts the following technical scheme:
a high-stability CMP polishing solution comprises, by weight, 20-50 parts of an abrasive, 0.3-8 parts of a pH regulator, 2-5 parts of polyether polyol, 0.005-0.008 part of hydroxybutyric acid, 0.01-0.15 part of a surfactant and the balance of water per 100 parts of the polishing solution.
By adopting the technical scheme, as the polyether polyol and the hydroxybutyric acid are added into the polishing solution, wherein the end group or the side group of the polyether polyol contains hydroxyl, the compatibility with water, abrasive materials and the like is higher, the compatibility of the hydroxybutyric acid and the polyether polyol is higher, and the hydroxybutyric acid and the polyether polyol can interact with each other, so that the stability of the polishing rate of the polishing solution during polishing is improved.
Preferably, the polyether polyol has an average molecular weight of 700-.
By adopting the technical scheme, the average molecular weight of the polyether polyol is controlled, the compatibility of the raw materials for preparing the polishing solution is improved, the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution is improved during polishing.
Preferably, the surfactant is an anionic surfactant.
By adopting the technical scheme, the anionic surfactant has high compatibility with polyether polyol, and can be crosslinked with polyether polyol and hydroxybutyric acid to form a crosslinked structure, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution during polishing is improved.
Preferably, the surfactant is a mixture of anionic polyacrylamide and sodium alkyl benzene sulfonate.
By adopting the technical scheme, the anionic polyacrylamide and the sodium alkyl benzene sulfonate are compounded, and are interacted, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution during polishing is improved.
Preferably, the weight ratio of the anionic polyacrylamide to the sodium alkyl benzene sulfonate is (0.05-0.3): 1.
by adopting the technical scheme, the application further enhances the interaction between the hydroxybutyric acid and the polyether polyol by controlling the weight ratio of the anionic polyacrylamide to the sodium alkyl benzene sulfonate, so that the stability of the polishing rate of the polishing solution is improved during polishing.
Preferably, the sodium alkyl benzene sulfonate is sodium dodecyl benzene sulfonate.
By adopting the technical scheme, the sodium dodecyl benzene sulfonate has higher compatibility with the polyether polyol and the abrasive, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution during polishing is improved.
Preferably, the abrasive is a mixture of silica sol and titania hydrosol.
By adopting the technical scheme, the silica sol and the titanium dioxide hydrosol are compounded, and the silica sol and the titanium dioxide hydrosol interact with each other, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution is improved during polishing.
Preferably, the weight ratio of the silica sol to the titanium dioxide hydrosol is 1: (0.05-0.15).
By adopting the technical scheme, the application further enhances the interaction between the hydroxybutyric acid and the polyether polyol by controlling the weight ratio of the silica sol to the titanium dioxide hydrosol, so that the stability of the polishing rate of the polishing solution is improved during polishing.
Preferably, the pH regulator is a mixture of sodium hydroxide and dimethylacetamide, and the weight ratio of sodium hydroxide to dimethylacetamide is 1: (0.8-1).
By adopting the technical scheme, the sodium hydroxide and the dimethylacetamide are compounded, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution is improved during polishing.
In summary, the present application has the following beneficial effects:
1. according to the polishing liquid, the polyether polyol and the hydroxybutyric acid are added into the polishing liquid, wherein the end group or the side group of the polyether polyol contains hydroxyl, so that the compatibility with water, an abrasive and the like is high, the hydroxybutyric acid and the polyether polyol are high in compatibility and can interact with the polyether polyol, and the stability of the polishing rate of the polishing liquid during polishing is improved;
2. the polyether polyol with the average molecular weight of 1000 is preferably adopted in the polishing solution, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the prepared polishing solution is high during polishing;
3. according to the polishing solution, the anionic polyacrylamide is preferably used as the surfactant, the anionic polyacrylamide has high compatibility with polyether polyol, and can be crosslinked with the polyether polyol and the hydroxybutyric acid to form a crosslinked structure, so that the interaction between the hydroxybutyric acid and the polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution during polishing is improved.
Detailed Description
The present application will be described in further detail with reference to the following examples, wherein the sources of raw materials used in the present application are shown in Table 1, and the raw materials not mentioned in Table 1 are all purchased from national pharmaceutical products chemical Co.
TABLE 1 sources of raw materials used in the present application
Examples
Example 1
A high-stability CMP polishing solution is prepared by the following steps: uniformly mixing 40kg of grinding material, 5kg of pH regulator, 3kg of polyether polyol, 0.007kg of hydroxybutyric acid, 0.1kg of surfactant and 51.893kg of water to prepare the polishing solution;
the abrasive is silica sol, the pH regulator is 85 wt% sodium hydroxide, the polyether polyol has average molecular weight of 410, and the surfactant is polyquaternium.
Examples 2 to 7
Examples 2 to 7 are based on example 1 and differ from example 1 only in that: the dosage of each raw material is different, and the specific table is shown in table 2.
TABLE 2 raw material amounts of examples 1 to 7
Example 8
Example 8 is based on example 1 and differs from example 1 only in that: the titanium dioxide hydrosol with equal mass is used for replacing the silica sol.
Examples 9 to 11
Examples 9 to 11 are based on example 1 and differ from example 1 only in that: the polyether polyols used varied in average molecular weight and are shown in Table 3.
TABLE 3 average molecular weights of polyether polyols of examples 9-11
| Examples | Example 9 | Example 10 | Example 11 |
| Average molecular weight of polyether polyol | 700 | 2000 | 1000 |
Example 12
Example 12 is based on example 11 and differs from example 11 only in that: the polyquaternium is replaced by anionic polyacrylamide with equal mass.
Example 13
Example 13 is based on example 11 and differs from example 11 only in that: the polyquaternary ammonium salt is replaced by hexadecyl sodium benzene sulfonate with equal mass.
Examples 14 to 17
Examples 14 to 17 are based on example 13 and differ from example 13 only in that: the surfactant used was a mixture of anionic polyacrylamide and sodium hexadecylbenzene sulfonate, the weight ratio of anionic polyacrylamide to sodium hexadecylbenzene sulfonate was varied, as shown in table 4.
TABLE 4 weight ratio of anionic polyacrylamide to sodium hexadecylbenzenesulfonate for examples 14 to 17
Example 18
Example 18 is based on example 17 and differs from example 17 only in that: sodium dodecyl benzene sulfonate with equal mass is used to replace sodium hexadecylbenzene sulfonate.
Example 19
Example 19 is based on example 18 and differs from example 18 only in that: the titanium dioxide hydrosol with equal mass is used for replacing the silica sol.
Examples 20 to 23
Examples 20 to 23 are based on example 19 and differ from example 19 only in that: the grinding material used was a mixture of silica sol and titania hydrosol, the weight ratio of silica sol to titania hydrosol being different, as shown in table 5.
TABLE 5 examples 20-23 weight ratios of silica sol to titania hydrosol
| Examples | Silica sol: of titanium dioxide hydrosol (weight ratio) |
| Example 20 | 1：1 |
| Example 21 | 1：0.05 |
| Example 22 | 1：0.15 |
| Example 23 | 1：0.1 |
Example 24
Example 24 is based on example 23 and differs from example 23 only in that: equal mass of dimethylacetamide was used instead of sodium hydroxide.
Examples 25 to 27
Examples 25 to 27 are based on example 24 and differ from example 24 only in that: the pH regulator used was a mixture of sodium hydroxide and dimethylacetamide in different weight ratios, as shown in Table 6.
TABLE 6 examples 25-27 weight ratio of sodium hydroxide to dimethylacetamide
| Examples | Sodium hydroxide: dimethylacetamide (by weight) |
| Example 25 | 1：0.8 |
| Example 26 | 1：1 |
| Example 27 | 1：0.9 |
Comparative example
Comparative example 1
Comparative example 1 is based on example 2 and differs from example 2 only in that: the polyether polyol is replaced by the abrasive with equal mass.
Comparative example 2
Comparative example 2 is based on example 2 and differs from example 2 only in that: equal mass of abrasive was substituted for hydroxybutyric acid.
Comparative example 3
A high-stability CMP polishing solution is prepared by the following steps: uniformly mixing 60kg of grinding material, 5kg of pH regulator, 10kg of polyether polyol, 0.007kg of hydroxybutyric acid, 0.1kg of surfactant and 29.893kg of water to prepare the polishing solution;
the abrasive is silica sol, the pH regulator is 85 wt% sodium hydroxide, the polyether polyol has average molecular weight of 410, and the surfactant is polyquaternium.
Performance test
The following performance tests were performed on the highly stable CMP polishing liquids prepared in examples 1 to 27 and comparative examples 1 to 3, respectively.
Polishing rate stability test: polishing silicon wafers by using the high-stability CMP polishing solution prepared by the method, performing polishing tests on 100 silicon wafers by using the CMP polishing solutions corresponding to examples 1-27 and comparative examples 1-3 respectively and recording the polishing rate, wherein the polishing rate of each example or comparative example is recorded as v1、v2……v100Calculating the average polishing rate and recording as v0And calculating the relative fluctuation percentage of the polishing rate (v ═ v)1/v0+v2/v0+……v100/v0) 100 x 100%, the greater the relative fluctuation percentage of the polishing rate, the poorer the stability of the polishing rate, the smaller the relative fluctuation percentage of the polishing rate, the higher the stability of the polishing rate, and the test results are shown in table 7;
the polishing machine used in polishing is a single-side polishing machine, the polishing machine is provided with 4 polishing heads, each polishing head can polish 4 silicon wafers, the polishing pressure in polishing is 32kPa, the rotating speed of a polishing turntable is 90r/min, the rotating speed of the polishing heads is 100r/min, the polishing time is 20min, the flow of polishing solution in polishing is 230ml/min, and the polishing temperature is 20 ℃. The polishing pad is a polyurethane foam cured polishing pad, and the polyurethane foam cured polishing pad is a 600-type polishing pad, which is purchased from SUB Rodel company; silicon wafers are available from Qian and Youngao Seisakusho Inc. in P type <100>, 100mm in diameter and 0.1-100 Ω cm in resistivity.
TABLE 7 test results of examples 1-27 and comparative examples 1-3
Analyzing the data to know that:
the high-stability CMP polishing solution prepared by the method has good polishing effect and high polishing rate stability, and the data of comparative examples 1-8 show that example 1 is the best example of examples 1-8.
Comparing the data of examples 1-8 with comparative examples 1-3, it can be seen that polyether polyol and hydroxybutyric acid are added to the polishing solution, wherein the end group or side group of polyether polyol contains hydroxyl group, and has high compatibility with water, abrasive, etc., and hydroxybutyric acid has high compatibility with polyether polyol, and can interact with polyether polyol, thereby improving the stability of polishing rate of the polishing solution during polishing.
Comparing the data of examples 9 to 11 with the data of example 1, it can be seen that the present application improves the compatibility between the preparation raw materials of the polishing solution, enhances the interaction between the hydroxybutyric acid and the polyether polyol, and improves the stability of the polishing rate of the polishing solution during polishing by controlling the average molecular weight of the polyether polyol. Wherein, when the average molecular weight of the polyether polyol is 1000, the prepared polishing solution has higher stability of polishing rate during polishing.
Comparing the data of example 12 and example 11, it can be seen that the anionic polyacrylamide has a high compatibility with the polyether polyol, and can crosslink with the polyether polyol and the hydroxybutyric acid to form a crosslinked structure, thereby enhancing the interaction between the hydroxybutyric acid and the polyether polyol and improving the stability of the polishing rate of the polishing solution during polishing.
Comparing the data of example 14 with those of examples 12 and 13, it can be seen that the anionic polyacrylamide and sodium hexadecylbenzene sulfonate are compounded, and the interaction between the anionic polyacrylamide and the sodium hexadecylbenzene sulfonate enhances the interaction between the hydroxybutyric acid and the polyether polyol, so that the polishing rate stability of the polishing solution is improved during polishing.
Comparing the data of examples 15 to 17 with that of example 14, it can be seen that the present application further enhances the interaction between hydroxybutyric acid and polyether polyol by controlling the weight ratio of anionic polyacrylamide to sodium hexadecylbenzenesulfonate, so that the polishing rate stability of the polishing solution is improved during polishing. Wherein when the weight ratio of the anionic polyacrylamide to the sodium hexadecylbenzene sulfonate is 0.2: 1, the prepared polishing solution has higher stability of polishing rate during polishing.
As can be seen from the data of comparative example 18 and example 17, the compatibility of sodium dodecylbenzenesulfonate with polyether polyol and the abrasive is high, so that the interaction between hydroxybutyric acid and polyether polyol is enhanced, and the stability of the polishing rate of the polishing solution during polishing is improved.
Comparing the data of example 18 with the data of example 19 and example 18, it can be seen that the silica sol and the titania hydrosol are compounded, and the interaction between the silica sol and the titania hydrosol enhances the interaction between the hydroxybutyric acid and the polyether polyol, so that the stability of the polishing rate of the polishing solution during polishing is improved.
Comparing the data of examples 21 to 23 with the data of example 20, it can be seen that the present application further enhances the interaction between hydroxybutyric acid and polyether polyol by controlling the weight ratio of silica sol to titania hydrosol, so that the polishing rate stability of the polishing solution during polishing is improved. Wherein when the weight ratio of the silica sol to the titanium dioxide hydrosol is 1: when the polishing speed is 0.1, the prepared polishing solution has higher stability of the polishing speed during polishing.
Comparing the data of examples 25 to 27 with those of examples 24 and 23, it can be seen that the interaction between hydroxybutyric acid and polyether polyol is enhanced by the combination of sodium hydroxide and dimethylacetamide, so that the polishing rate stability of the polishing solution is improved during polishing. Wherein when the weight ratio of the sodium hydroxide to the dimethylacetamide is 1: when the polishing speed is 0.9, the prepared polishing solution has higher stability of the polishing speed during polishing.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (9)
1. A high-stability CMP polishing solution is characterized in that every 100 parts by weight of the polishing solution comprises 20-50 parts of abrasive, 0.3-8 parts of pH regulator, 2-5 parts of polyether polyol, 0.005-0.008 part of hydroxybutyric acid, 0.01-0.15 part of surfactant and the balance of water.
2. The highly stable CMP slurry according to claim 1, wherein: the polyether polyol has an average molecular weight of 700-.
3. The highly stable CMP slurry according to claim 1, wherein: the surfactant is an anionic surfactant.
4. A highly stable CMP slurry as set forth in claim 3, wherein: the surfactant is a mixture of anionic polyacrylamide and sodium alkyl benzene sulfonate.
5. The highly stable CMP slurry according to claim 4, wherein: the weight ratio of the anionic polyacrylamide to the sodium alkyl benzene sulfonate is (0.05-0.3): 1.
6. the highly stable CMP slurry according to claim 4, wherein: the sodium alkyl benzene sulfonate is sodium dodecyl benzene sulfonate.
7. The highly stable CMP slurry according to claim 1, wherein: the grinding material is a mixture of silica sol and titanium dioxide hydrosol.
8. The highly stable CMP slurry according to claim 6, wherein: the weight ratio of the silica sol to the titanium dioxide hydrosol is 1: (0.05-0.15).
9. The highly stable CMP slurry according to claim 1, wherein: the pH regulator is a mixture of sodium hydroxide and dimethylacetamide, and the weight ratio of the sodium hydroxide to the dimethylacetamide is 1: (0.8-1).
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8980749B1 (en) * | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
| WO2019180887A1 (en) * | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8980749B1 (en) * | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
| CN104551977A (en) * | 2013-10-24 | 2015-04-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Method for chemical mechanical polishing silicon wafers |
| WO2019180887A1 (en) * | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
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