CN113206181A - Radial junction silicon quantum dot electroluminescent device and preparation method thereof - Google Patents
Radial junction silicon quantum dot electroluminescent device and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 84
- 239000010703 silicon Substances 0.000 title claims abstract description 84
- 239000002096 quantum dot Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002070 nanowire Substances 0.000 claims abstract description 30
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims description 10
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000005543 nano-size silicon particle Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
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- 230000008025 crystallization Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
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- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 238000005401 electroluminescence Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
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- 239000002905 metal composite material Substances 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 5
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- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
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- 150000003376 silicon Chemical class 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention belongs to the field of semiconductor photoelectric devices, and discloses a radial junction silicon quantum dot electroluminescent device which comprises a silicon substrate sample etched with a silicon nanowire array, wherein Al is deposited on the surface of the sample2O3Passivation layer of Al2O3A silicon quantum dot/silicon dioxide multilayer film is arranged on the surface of the passivation layer, and TiO is deposited on the surface of the silicon quantum dot/silicon dioxide multilayer film2Layer of said TiO2An Au layer is sputtered on the surface of the layer, an ITO electrode is plated on the Au layer, and an aluminum electrode is evaporated on the back of the silicon substrate sample. Compared with the prior art, the invention can obviously improve the injection current of the device and enhance the injection current of the device by improving the electrode contact and the energy band regulationThe intensity of electroluminescence.
Description
Technical Field
The invention belongs to the field of semiconductor photoelectric devices, and particularly relates to a method for utilizing TiO2The metal composite structure improves the radial junction silicon quantum dot LED prototype device, and the method improves the current injection efficiency of the device and enhances the electroluminescent intensity of the device.
Background
With the reduction of the characteristic size of a semiconductor chip, the problems of small transmission bandwidth, poor interference resistance and the like of the traditional electrical signal transmission occur. In contrast, optical signal transmission is considered to be an important development direction of high-performance integrated circuit chips nowadays due to its advantages of high bandwidth, low power consumption, fast transmission speed, strong anti-interference capability, and the like. Optical interconnects are becoming a great trend to replace electrical interconnects. Through research in recent ten years, components such as silicon-based waveguides, silicon-based modulators, silicon-based photoelectric detection and the like are basically solved; however, as the core of silicon-based optical interconnects, i.e. the preparation of silicon-based light sources compatible with silicon-based processes, no satisfactory solution has been found.
Silicon is taken as a typical indirect bandgap semiconductor material, and the radiative recombination of the silicon requires phonon participation, so that the luminous efficiency is extremely low. In order to solve the problem of silicon luminescence, various schemes such as porous silicon luminescence, silicon nanowire luminescence, defect luminescence, silicon quantum dot luminescence and the like are proposed in succession. Among them, the silicon quantum dots are considered as important materials for realizing silicon-based light sources due to the advantages of adjustable band gap, high radiation recombination efficiency and the like. In recent years, the nanowire light trapping structure and the silicon quantum dot are combined to construct a radial junction silicon quantum dot electroluminescent prototype device, which receives attention. However, due to the large depth of the nanowires, the electrode on the top of the device cannot be uniformly coated on the whole nanowire, but is limited to the area near the top of the nanowire, and the effective current injection and the light emitting area are also localized on the top of the device. The local injection of excess electrons will result in heat loss, which is detrimental to the improvement of the electro-optic efficiency of the device.
Therefore, there is a need to develop an electroluminescent device with uniform electrode coverage and high photoelectric efficiency.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems and the defects in the prior art, the invention provides a method for utilizing TiO2The invention provides a method for improving the structure of a radial junction silicon quantum dot LED electroluminescent device by a metal composite layer, improving electrode contact, improving the injection current of the device and enhancing the luminous intensity of the device, and also provides a preparation method of the device.
The technical scheme is as follows: a radial junction silicon quantum dot electroluminescent device is characterized in that: the silicon substrate sample comprises a silicon nanowire array etched, and Al is deposited on the surface of the sample2O3Passivation layer of Al2O3A silicon quantum dot/silicon dioxide multilayer film is arranged on the surface of the passivation layer, and TiO is deposited on the surface of the silicon quantum dot/silicon dioxide multilayer film2Layer of said TiO2An Au layer is sputtered on the surface of the layer, an ITO electrode is plated on the Au layer, and an aluminum electrode is evaporated on the back of the silicon substrate sample.
The invention also discloses a preparation method of the radial junction silicon quantum dot electroluminescent device, which is characterized by comprising the following steps:
the first step is as follows: preparation of silicon nanowires and Al2O3Passivation of
1.1) etching a P-type silicon substrate by using a mixed solution of silver nitrate and hydrofluoric acid to form a silicon nanowire array, and controlling the etching length of the silicon nanowire by controlling the reaction time;
1.2) after etching, removing impurities on the surface of the sample by using a nitric acid solution, and then cleaning and drying by using deionized water;
1.3) depositing a layer of Al on the surface of the etched silicon nanowire by utilizing an atomic layer deposition technology2O3Defects of the passivated surface;
the second step is that: preparation of silicon quantum dot multilayer film
Placing the passivated silicon nanowire array in a PECVD system, alternately introducing silane and oxygen to form an amorphous silicon/silicon dioxide multilayer film, and then carrying out high-temperature annealing crystallization under the protection of nitrogen to form a silicon quantum dot/silicon dioxide multilayer film structure;
the third step: introduction of TiO2Au composite layer and electrode preparation
3.1) performing alloying treatment on the back surface of the annealed sample, namely the bottom of the p silicon substrate by utilizing a thermal evaporation aluminum-deposited electrode, and then putting the sample into a nitrogen atmosphere at 400 ℃;
3.2) putting the sample into an atomic layer deposition system, and depositing a layer of TiO with the thickness of 2-6 nm2A layer;
3.3) magnetron sputtering on TiO2Sputtering an Au layer with the thickness of 2-8 nm for 100s at the sputtering power of 60W;
and 3.4) sputtering a point-shaped ITO electrode on the sample by utilizing a magnetron sputtering technology to finish the preparation of the silicon radial junction silicon quantum dot electroluminescent device.
The invention further defines the technical scheme as follows: in step 1.1, firstly, the p-type silicon substrate is cleaned by RCA standard process, and then is put into etching liquid for etching for 12 minutes, wherein the etching liquid is 0.2mol/L AgNO3Solution: hydrofluoric acid: deionized water =1:2.5:6.5, and the height of the etched nanowire is 700 nm.
Preferably, in step 1.3, 6nm of Al is grown on the nanowires using an ALD atomic layer deposition system2O3A film.
Preferably, the second step comprises:
2.1) placing the silicon nanowire passivated by the alumina in a PECVD growth system, and alternately introducing silane and oxygen to complete the preparation of amorphous silicon/silicon oxide: the growth temperature is 250 ℃, the frequency of a power source is 13.56MHz, the power is 20W, the flow rate of silane is 5sccm, the growth time per period is 90s, and the expected growth thickness is 6-8 nm; the oxygen flow is 20sccm, the in-situ oxidation time is 90s, and the predicted growth thickness is 3 nm; the period of the amorphous silicon/silicon dioxide is 6;
2.2) placing the sample in a tubular annealing furnace to perform dehydrogenation treatment in a nitrogen atmosphere;
2.3) annealing for 1 hour in the nitrogen atmosphere at 1000 ℃, and crystallizing the amorphous silicon sublayer to finally form the nano silicon quantum dot/silicon dioxide multilayer film.
Has the advantages that: compared with the prior art, the invention has the following advantages:
1) after the silicon quantum dot/silicon dioxide multilayer film is prepared, a gold film is covered on the silicon quantum dot/silicon dioxide multilayer film by a magnetron sputtering method, so that the heat loss caused by excessive injection of electrons to the top of the nanowire is relieved, and the current injection efficiency of a device is improved; the Fowler-Nordheim tunneling threshold voltage of the device is obviously reduced, and the electroluminescent performance of the device is obviously improved.
2) The device has simple, controllable and repeatable preparation process.
3) The preparation of the device is compatible with the microelectronic process, and is beneficial to large-scale production.
Drawings
FIG. 1 is a schematic structural diagram of a radial junction silicon quantum dot electroluminescent device in an embodiment of the present invention;
FIG. 2 is an I-V characteristic curve of a radial junction silicon quantum dot electroluminescent device before and after introducing a TiO2/Au composite layer in an embodiment of the invention;
FIG. 3 is the Electroluminescence (EL) spectrum of a radial junction silicon quantum dot electroluminescent device before and after introducing a TiO2/Au composite layer in an embodiment of the invention.
Detailed Description
As shown in FIG. 1, the present embodiment provides a radial junction silicon quantum dot electroluminescent device, which comprises an Al electrode, a p-type silicon substrate, and Al2O3Passivation layer, silicon quantum dot multilayer film structure and TiO2Metal composite layer and ITO electrode. The preparation method of the light-emitting device comprises the following steps:
first step, preparation and passivation of silicon nanowires
1.1) carrying out RCA standard process cleaning on the p-type silicon substrate, and then placing the p-type silicon substrate in an etching solution for 12 minutes. Etching solution of 0.2mol/L AgNO3Solution: hydrofluoric acid: deionized water =1:2.5:6.5 ratio, and the height of the etched nanowire is about 700 nm.
1.2) after the etching is finished, washing the sample twice by using dilute nitric acid to remove silver ions on the surface, and then cleaning the sample by using deionized water.
1.3) drying the sample and growing about 6nm of Al on the nanowires using an ALD atomic layer deposition system2O3A film. Thus we obtained ultra-thin Al2O3Passivated silicon nanowire structures.
Second step, preparation of silicon quantum dot multilayer film
2.1) placing the obtained silicon nanowire passivated by the alumina in a PECVD growth system, and alternately introducing silane and oxygen to complete the preparation of amorphous silicon/silicon oxide. The growth temperature is 250 ℃, the frequency of a power source is 13.56MHz, and the power is 20W. Wherein the silane flow is 5sccm, the growth time per period is 90s, and the expected growth thickness is 6-8 nm; the oxygen flow was 20sccm, the in situ oxidation time was 90s, and a growth thickness of 3nm was expected. The amorphous silicon/silicon dioxide period was 6.
2.2) placing the sample in a tubular annealing furnace to perform dehydrogenation treatment in a nitrogen atmosphere.
2.3) annealing for 1 hour in the nitrogen atmosphere at 1000 ℃, and crystallizing the amorphous silicon sublayer to finally form the nano silicon quantum dot/silicon dioxide multilayer film.
Third step, TiO2Preparation of/Au composite layer and electrode evaporation
3.1) firstly plating an aluminum electrode on the back of the sample after annealing, namely the bottom of the p silicon substrate by thermal evaporation, and then placing the electrode in a nitrogen atmosphere at 400 ℃ for alloying treatment so as to achieve better electrode contact.
3.2) putting the sample into an atomic layer deposition system, and depositing a layer of TiO with the thickness of 2-4 nm2And (3) a layer.
3.3) magnetron sputtering on TiO2An Au layer with the thickness of about 10nm is sputtered on the substrate, the sputtering power is 60W, and the time is 100 s.
And 3.4) sputtering a point-shaped ITO electrode on the sample by utilizing a magnetron sputtering technology to finish the preparation of the silicon radial junction silicon quantum dot electroluminescent device.
Considering the large difference between the fermi level of gold and the conduction band bottom of silica, this embodiment inserts a layer of titanium oxide as an electron transport layer between gold and the silicon quantum dot/silica multilayer film. In this exampleFor introduction of TiO2The characteristics of the devices before and after the metal composite layer structure are compared. As shown in FIG. 2, TiO was introduced2After the/metal composite layer structure is adopted, the rectification characteristic (solid line) is obviously enhanced compared with that before the introduction (dotted line), and the injection current is larger under the same voltage. This example measured the photoelectric characteristics of titanium oxide, and analyzed the cause of the weak n-type conductivity characteristics of titanium oxide by XPS. According to the characteristic curve of the electroluminescent property and the reverse voltage-current, the titanium oxide can also be used as a hole blocking layer, so that holes are limited in the silicon quantum dots, and the radiative recombination probability is improved. The device with titanium oxide showed an electroluminescence intensity of up to 2.4 times the original one at the same bias.
As shown in FIG. 3, TiO is introduced under the same open pressure of 12V2Compared with the structure before the introduction (dotted line), the electroluminescent intensity of the device is obviously improved after the metal composite layer structure (solid line). In summary, this example utilizes TiO2The metal composite layer structure greatly improves the performance of the device. The method is not only suitable for electroluminescent devices, but also can be applied to the fields of nano-structure solar cells and photocatalysis.
The foregoing is only a preferred embodiment of this invention and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the invention and these modifications should also be considered as the protection scope of the invention.
Claims (5)
1. A radial junction silicon quantum dot electroluminescent device is characterized in that: the silicon substrate sample comprises a silicon nanowire array etched, and Al is deposited on the surface of the sample2O3Passivation layer of Al2O3A silicon quantum dot/silicon dioxide multilayer film is arranged on the surface of the passivation layer, and TiO is deposited on the surface of the silicon quantum dot/silicon dioxide multilayer film2Layer of said TiO2An Au layer is sputtered on the surface of the layer, an ITO electrode is plated on the Au layer, and an aluminum electrode is evaporated on the back of the silicon substrate sample.
2. A preparation method of a radial junction silicon quantum dot electroluminescent device is characterized by comprising the following steps:
the first step is as follows: preparation of silicon nanowires and Al2O3Passivation of
1.1) etching a P-type silicon substrate by using a mixed solution of silver nitrate and hydrofluoric acid to form a silicon nanowire array, and controlling the etching length of the silicon nanowire by controlling the reaction time;
1.2) after etching, removing impurities on the surface of the sample by using a nitric acid solution, and then cleaning and drying by using deionized water;
1.3) depositing a layer of Al on the surface of the etched silicon nanowire by utilizing an atomic layer deposition technology2O3Defects of the passivated surface;
the second step is that: preparation of silicon quantum dot multilayer film
Placing the passivated silicon nanowire array in a PECVD system, alternately introducing silane and oxygen to form an amorphous silicon/silicon dioxide multilayer film, and then carrying out high-temperature annealing crystallization under the protection of nitrogen to form a silicon quantum dot/silicon dioxide multilayer film structure;
the third step: introduction of TiO2Au composite layer and electrode preparation
3.1) performing alloying treatment on the back surface of the annealed sample, namely the bottom of the p silicon substrate by utilizing a thermal evaporation aluminum-deposited electrode, and then putting the sample into a nitrogen atmosphere at 400 ℃;
3.2) putting the sample into an atomic layer deposition system, and depositing a layer of TiO with the thickness of 2-6 nm2A layer;
3.3) magnetron sputtering on TiO2Sputtering an Au layer with the thickness of 2-8 nm for 100s at the sputtering power of 60W;
and 3.4) sputtering a point-shaped ITO electrode on the sample by utilizing a magnetron sputtering technology to finish the preparation of the silicon radial junction silicon quantum dot electroluminescent device.
3. The method for preparing the radial junction silicon quantum dot electroluminescent device as claimed in claim 2, wherein in step 1.1, the p-type silicon substrate is firstly cleaned by RCA standard process, and then is put in etching solution for 12 minutes, wherein the etching solution is 0.2mol/L AgNO3Solution: hydrofluoric acid: deionized water =1:2.5:6.5, and the height of the etched nanowire is 700 nm.
4. The method of claim 2, wherein in step 1.3, 6nm of Al is grown on the nanowires using an ALD atomic layer deposition system2O3A film.
5. The method for preparing the radial junction silicon quantum dot electroluminescent device according to claim 2, wherein the second step comprises:
2.1) placing the silicon nanowire passivated by the alumina in a PECVD growth system, and alternately introducing silane and oxygen to complete the preparation of amorphous silicon/silicon oxide: the growth temperature is 250 ℃, the frequency of a power source is 13.56MHz, the power is 20W, the flow rate of silane is 5sccm, the growth time per period is 90s, and the expected growth thickness is 6-8 nm; the oxygen flow is 20sccm, the in-situ oxidation time is 90s, and the predicted growth thickness is 3 nm; the period of the amorphous silicon/silicon dioxide is 6;
2.2) placing the sample in a tubular annealing furnace to perform dehydrogenation treatment in a nitrogen atmosphere;
2.3) annealing for 1 hour in the nitrogen atmosphere at 1000 ℃, and crystallizing the amorphous silicon sublayer to finally form the nano silicon quantum dot/silicon dioxide multilayer film.
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| Title |
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| 季阳: "界面层调控和修饰对提高硅量子点/硅米线电致发光器件性能的研究", 《中国优秀博硕士学位论文全文数据库（博士） 信息科技辑》 * |
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