CN113206034A - Transfer head, transfer device, and transfer method - Google Patents
Transfer head, transfer device, and transfer method Download PDFInfo
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- CN113206034A CN113206034A CN202110482818.1A CN202110482818A CN113206034A CN 113206034 A CN113206034 A CN 113206034A CN 202110482818 A CN202110482818 A CN 202110482818A CN 113206034 A CN113206034 A CN 113206034A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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Abstract
The embodiment of the invention discloses a transfer head, a transfer device and a transfer method. The transfer head includes: a substrate; a plurality of transfer sections on the substrate; the transfer part comprises a transfer bonding surface far away from one side of the substrate, and the transfer bonding surface is used for bonding the chip; and the bonding force between the transfer bonding surface and the chip is adjustable. Compared with the prior art, the embodiment of the invention can simultaneously meet different requirements of chip picking and releasing on the transfer head, and improves the transfer capability of the transfer head.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a transfer head, a transfer device and a transfer method.
Background
With the development of Display technology, the Display mode gradually changes from Cathode Ray Tube (CRT), Liquid Crystal Display (Liquid Crystal Display), Organic Light-Emitting Diode (OLED) to Micro LED (Micro LED).
The Micro-LED display technology has the advantages of high brightness, high response speed, low power consumption, long service life and the like, and becomes a research hotspot of a new generation of display technology. In the process of manufacturing the Micro-LED display panel, a huge transfer technology is commonly used, and a transfer head is specifically adopted to pick up and release a Micro-LED chip. However, the conventional transfer head has poor transfer capability, and cannot simultaneously meet the requirements of chip pick-up and release, so that the yield of mass transfer is low.
Disclosure of Invention
The embodiment of the invention provides a transfer head, a transfer device and a transfer method, which are used for meeting different requirements of chip picking and releasing on binding force and improving the transfer capability of the transfer head.
In order to achieve the technical purpose, the embodiment of the invention provides the following technical scheme:
a transfer head for transferring a chip, the transfer head comprising:
a substrate;
a plurality of transfer sections on the substrate; the transfer part comprises a transfer bonding surface far away from one side of the substrate, and the transfer bonding surface is used for bonding the chip; and the bonding force between the transfer bonding surface and the chip is adjustable.
Optionally, the size of the transfer interface is adjustable, and/or the viscosity of the transfer interface is adjustable;
preferably, the material of the transfer part comprises a shape memory polymer material to adjust the size of the transfer bonding surface;
preferably, the material of the transfer part comprises a viscosity-adjustable polymer material to adjust the viscosity of the transfer bonding surface.
Optionally, the material of the transfer portion comprises an electro-deformable material;
preferably, the electro-deformable material comprises: a thermally deformable material and a conductive material;
preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone, and polyamide;
the conductive material includes: at least one of conductive carbon black, metal powder and conductive polymer.
Optionally, the material of the transfer portion comprises a thermally-deformable material;
preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone or polyamide;
preferably, the transfer head further comprises a temperature-regulating part located between the substrate and the transfer part; alternatively, the temperature adjustment portion is located on a side of the substrate away from the transfer portion.
Optionally, the material of the transfer portion comprises a photo-deformable material;
preferably, the photo-deformable material comprises a high molecular material and a photochromic group;
preferably, the polymer material includes: at least one of polyethylene, polyisoprene, polyester, copolyester, polyamide, copolyamide and polyurethane;
the photochromic group comprises: at least one of azobenzene and spirobenzopyran.
Optionally, the material of the transfer portion comprises a chemically-sensitive material;
preferably, the chemically-responsive material comprises: at least one of a pH value sensing material, a counter ion displacement sensing material, a chelating reaction sensing material, a phase transition reaction sensing material and a redox reaction sensing material;
preferably, the chemically-responsive material comprises: at least one of a mixture of partially saponified polyacrylamide, polyvinyl alcohol, and polyacrylic acid;
preferably, the transfer head further comprises an illumination section located between the substrate and the transfer section; or the illumination part is positioned on one side of the substrate far away from the transfer part.
Optionally, the transfer bonding surface of the transfer portion is the same shape as the corresponding surface on the chip;
preferably, the material of the transfer part comprises a shape memory polymer material, and the size of the transfer bonding surface is adjustable; the transfer bonding surface in the large-size state has the same size as the corresponding surface on the chip or is larger than the corresponding surface on the chip; the transfer bonding surface in the small-size state is smaller than the corresponding surface on the chip;
or the material of the transfer part comprises a viscosity-adjustable high polymer material, the viscosity of the transfer bonding surface is adjustable, and the size of the transfer bonding surface is the same as or larger than that of the corresponding surface on the chip.
Correspondingly, the invention also provides a transfer device, comprising: a transfer head according to any embodiment of the invention;
and the condition releasing module is used for providing preset conditions for the transfer head so as to change the bonding force between the transfer bonding surface and the chip.
Optionally, the conditional release module comprises: at least one of a voltage module, a temperature regulation module, an illumination module, and a chemical gas module.
Correspondingly, the invention also provides a transfer method, which is suitable for the transfer head in any embodiment of the invention, and the transfer method comprises the following steps:
providing a transfer head; the transfer head comprises a substrate and a plurality of transfer parts positioned on the substrate, wherein each transfer part comprises a transfer bonding surface far away from one side of the substrate;
picking up a chip on a supply substrate by using the transfer head, and providing a first preset condition for the transfer head to increase the bonding force between the transfer bonding surface and the chip;
the transfer head aligns and combines the picked chip with a back plate electrode, and simultaneously provides a second preset condition for the transfer head so as to reduce the bonding force between the transfer bonding surface and the chip and release the chip to the back plate; wherein the second preset condition is different from the first preset condition.
The embodiment of the invention sets that the binding force between the transfer binding surface and the chip is adjustable, so that the binding force of the transfer binding surface can be adjusted according to the specific requirements of picking and releasing the binding force in the process of transferring a large amount of chips. Exemplarily, in the process of picking up the chip, the bonding force of the transferring bonding surface is increased, so that the transferring part is firmly bonded with the chip, and the chip is prevented from falling off during transportation; and in the process of releasing the chip, reducing the bonding force of the transfer bonding surface so that the bonding force of the transfer part and the chip is smaller than the bonding force of the chip and the backboard electrode, and facilitating the release of the chip on the backboard. In summary, the embodiment of the present invention sets the transferring bonding surface to have an adjustable bonding force with respect to the chip, which is beneficial to both the pickup and release of the chip, and can simultaneously satisfy different requirements of the chip pickup and release on the bonding force. Therefore, the transfer head provided by the embodiment of the invention has stronger transfer capability and is beneficial to improving the yield of mass transfer.
Drawings
FIG. 1 is a schematic diagram of a prior art micro-LED chip transfer to a backplane;
fig. 2 is a schematic structural diagram of a transfer head according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view taken along line A-A in FIG. 2;
FIG. 4 is a schematic diagram illustrating a bonding force adjustment of a transfer bonding surface according to an embodiment of the present invention;
FIG. 5 is a schematic view illustrating an alternative bonding force adjustment of the transfer bonding surface according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of another transfer head according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of another transfer head according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a transfer head for bonding a chip according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of another embodiment of a transfer head for bonding a chip;
fig. 10 is a schematic structural diagram of a transfer device according to an embodiment of the present invention;
fig. 11 is a schematic flow chart of a transfer method according to an embodiment of the present invention;
fig. 12 is a schematic state diagram of a transfer method in each step according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, the conventional transfer head has poor transfer capability and cannot meet the requirements of picking up and releasing at the same time, and the reason for the problem is analyzed by taking the case of transferring the micro-LED chip to the backplane as an example. Fig. 1 is a schematic diagram illustrating a conventional method for transferring micro-LED chips to a back plate. Referring to fig. 1, reference numeral 10 denotes a chip, such as a micro-LED chip; reference numeral 20 denotes a back plate, for example, a driving back plate of a micro-LED display panel. The chip 10 is transferred to the backplane 20 using a bulk transfer technique. In this process, the chip 10 is transferred by means of a transfer head (not shown in fig. 1). Specifically, the transfer head picks up the chip 10 on the supply substrate (not shown in fig. 1), and the bonding force between the transfer head and the chip 10 is intermolecular force, also called van der waals force, which is strictly controlled during the transfer process, and the transfer head and the chip 10 need to be firmly bonded to prevent the chip 10 from falling off during the transportation. Then, the chip 10 is carried to the back plate 20 by the transfer head and bonded to the back plate electrode, and at this time, the bonding force between the chip 10 and the back plate 20 should be greater than the bonding force between the transfer head and the chip 10, so as to release the chip 10 on the back plate 20.
As can be seen from the above steps, the bonding force of the existing transfer head to the chip 10 remains unchanged during the pick-up process and the release process. If the bonding force between the transfer head and the chip 10 is set to be larger, the picking up of the chip 10 is facilitated but the releasing of the chip 10 is not facilitated; in contrast, if the bonding force of the transfer head and the chip 10 is set to be small, the release of the chip 10 is facilitated but the pickup is not facilitated. Therefore, the conventional transfer head has poor transfer capability and cannot meet the requirements of picking up and releasing chips at the same time, so that the yield and the efficiency of mass transfer are low.
Embodiments of the present invention provide a transfer head suitable for bulk transfer of chips. Among them, there are various applicable types of chips, such as micro-LED chips and other light emitting chips, or other chips requiring mass transfer technology. Fig. 2 is a schematic structural diagram of a transfer head according to an embodiment of the present invention, and fig. 3 is a schematic structural diagram taken along a-a in fig. 2. Referring to fig. 2 and 3, the transfer head 30 includes a substrate 31 and a plurality of transfer sections 32 on the substrate 31. The transferring part 32 comprises a transferring joint surface 321 at a side far away from the substrate 31, the transferring joint surface 321 is used for bonding with the chip, and the bonding force of the transferring joint surface 321 and the chip is adjustable.
Since the bonding force between the transferring bonding surface 321 and the chip is adjustable, the bonding force of the transferring bonding surface 321 can be adjusted according to the specific requirements of picking up and releasing the bonding force in the process of transferring a large amount of chips. Illustratively, in the process of picking up the chip, the bonding force of the transferring bonding surface 321 is increased to firmly bond the transferring part 32 with the chip and prevent the chip from falling off during transportation; and, in the process of releasing the chip, the bonding force of the transfer bonding surface 321 is reduced, so that the bonding force of the transfer portion 32 and the chip is smaller than the bonding force of the chip and the backplane electrode, which is beneficial to releasing the chip on the backplane. In summary, the bonding force between the transfer bonding surface 321 and the chip is adjustable, which is beneficial to picking up the chip and releasing the chip, and can meet different requirements of the bonding force for picking up and releasing the chip. Therefore, the transfer head 30 provided by the embodiment of the present invention has a strong transfer capability, which is beneficial to increasing the yield of mass transfer.
In the above embodiment, the transfer bonding surface 321 is a part of the surface of the transfer portion 32. As shown in fig. 3, the transfer portion 32 further includes a fixed joint surface 322 and a side surface 323, the fixed joint surface 322 is disposed opposite to the transfer joint surface 321, and the fixed joint surface 322 is fixedly joined to the substrate 31. The coupling force of the transfer coupling surface 321 is adjusted, and the coupling force of the other surfaces of the transfer portion 32 is adjusted accordingly. In the manufacturing method of the transfer head 30, the transfer part 32 is formed on the substrate 31 by deposition or the like, and the bonding between the fixed bonding surface 322 of the transfer part 32 and the substrate 31 includes chemical bonding, so that the bonding force is strong. Therefore, in the process of adjusting the bonding force between the transfer unit 32 and the chip, the bonding force between the fixed bonding surface 322 and the substrate 31 is strong and is not likely to fall off. However, the bonding of the transfer bonding surface 321 to the chip is a physical bonding, such as van der waals forces, and the bonding force between the transfer bonding surface 321 and the chip is adjusted by adjusting the properties of the transfer bonding surface 321 itself.
In the above embodiments, there are various ways to adjust the bonding force of the transferring and bonding surface 321, for example, to adjust the size of the transferring and bonding surface 321, to adjust the viscosity of the transferring and bonding surface 321, or to adjust the size and viscosity of the transferring and bonding surface 321 at the same time, which will be described in detail below.
Fig. 4 is a schematic diagram illustrating adjustment of a bonding force of a transfer bonding surface according to an embodiment of the present invention. Referring to fig. 4, in one embodiment of the present invention, the material of the transfer portion 32 optionally includes a shape memory polymer material to make the size of the transfer interface 321 adjustable. The transfer bonding surface 321 directly contacts with the chip, and the bonding surface 321 and the chip are combined to form van der waals force, where the larger the contact area between the transfer bonding surface 321 and the chip is, the stronger the bonding force between the transfer bonding surface 321 and the chip is, and conversely, the smaller the contact area between the transfer bonding surface 321 and the chip is, the weaker the bonding force between the transfer bonding surface 321 and the chip is.
The shape of the shape memory polymer material, i.e., the size of the transfer interface 321, can be changed by setting different preset conditions. As shown in fig. 4, in one embodiment of the invention, optionally, conventional conditions are provided when the transfer head 30 is not in operation, the transfer interface 321 being of a medium size; when the transfer head 30 performs the picking operation, a first preset condition is provided, the transfer bonding surface 321 is stretched and has a larger size, and the contact area between the transfer bonding surface 321 and the chip is larger, so that the bonding force between the transfer bonding surface 321 and the chip can be increased, and the transfer head 30 carries the chip to complete the picking operation; when the transfer head 30 performs the releasing operation, a second preset condition is provided, the transfer bonding surface 321 is shrunk and reduced in size, and the contact area between the transfer bonding surface 321 and the chip is reduced, so that the bonding force between the transfer bonding surface 321 and the chip can be reduced.
Fig. 5 is a schematic diagram illustrating another bonding force adjustment of the transfer bonding surface according to an embodiment of the present invention. Referring to fig. 5, in another embodiment of the present invention, optionally, when the transfer head 30 is not in operation and when the transfer head 30 performs a pick-up operation, a first preset condition is provided, where the size of the transfer bonding surface 321 is larger, the contact area of the transfer bonding surface 321 and the chip is larger, and then the bonding force of the transfer bonding surface 321 and the chip is larger; when the transfer head 30 performs the releasing operation, a second preset condition is provided, the size of the transfer bonding surface 321 is smaller, the contact area between the transfer bonding surface 321 and the chip is smaller, and the bonding force between the transfer bonding surface 321 and the chip is smaller.
In another embodiment of the present invention, optionally, when the transfer head 30 is not operated and the transfer head 30 performs the releasing operation, a second preset condition is provided, the size of the transfer bonding surface 321 is smaller, the contact area of the transfer bonding surface 321 and the chip is smaller, and then the bonding force of the transfer bonding surface 321 and the chip is smaller; when the transfer head 30 performs a pick-up operation, a first preset condition is provided, the size of the transfer bonding surface 321 is larger, the contact area between the transfer bonding surface 321 and the chip is larger, and the bonding force between the transfer bonding surface 321 and the chip is larger.
Therefore, in the embodiment of the present invention, the size of the transfer bonding surface 321 is adjusted by using the shape memory function of the shape memory polymer material, the adjustment effect on the bonding force of the transfer bonding surface 321 is good, and the embodiment is simple and easy to implement.
In the above embodiments, the shape memory polymer material includes at least one of a thermally deformable material, an electrically deformable material, a photo-deformable material, and a chemically sensitive material. And, the manner of providing the preset condition is different according to the type of material used for the transfer section 32, which will be described in detail below.
In one embodiment of the present invention, optionally, the shape memory polymer material comprises a thermally deformable material, preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone, and polyamide. Thermally deformable materials are materials whose shape and size are temperature dependent. The addition of the heat-deformable material to the transfer portion 32 allows the transfer interface 321 to be dimensionally adjusted for different temperature stimuli.
With continued reference to FIG. 4, illustratively, the usual conditions are ambient conditions, with the transfer portion 32 not subjected to a temperature stimulus and the transfer interface 321 of medium size when the transfer head 30 is not in operation; the first preset condition is heating, when the transfer head 30 performs the picking operation, the transfer part 32 is heated and stimulated to stretch, and the size of the transfer bonding surface 321 is increased, so that the bonding force with the chip can be increased; the second preset condition is cooling, and when the transfer head 30 performs the releasing operation, the transfer portion 32 is contracted by the cooling stimulus, and the size of the transfer bonding surface 321 becomes small, so that the bonding force with the chip can be reduced.
With reference to fig. 5, for example, the first preset condition is a normal temperature condition, when the transfer head 30 is not in operation and the transfer head 30 performs a pick-up operation, the size of the transfer bonding surface 321 is large, the contact area between the transfer bonding surface 321 and the chip is large, and the bonding force between the transfer bonding surface 321 and the chip is large; the second preset condition is cooling, when the transfer head 30 performs the releasing operation, the size of the transfer bonding surface 321 is small, the contact area between the transfer bonding surface 321 and the chip is small, and the bonding force between the transfer bonding surface 321 and the chip is small.
Or, the second preset condition is a normal temperature condition, when the transfer head 30 does not work and the transfer head 30 performs release work, the size of the transfer bonding surface 321 is small, and the contact area between the transfer bonding surface 321 and the chip is small, so that the bonding force between the transfer bonding surface 321 and the chip is small; the first preset condition is heating, when the transfer head 30 performs a pick-up operation, the size of the transfer bonding surface 321 is large, the contact area between the transfer bonding surface 321 and the chip is large, and the bonding force between the transfer bonding surface 321 and the chip is large.
In the above-described embodiment in which the transfer portion comprises a thermally deformable material, optionally, the temperature condition is provided by a temperature regulating module that regulates the temperature of the transfer portion 32, and thus the size of the transfer junction surface 321, by heating or cooling the transfer head 30.
Fig. 6 is a schematic cross-sectional structure diagram of another transfer head according to an embodiment of the present invention. Referring to fig. 6, in one embodiment of the present invention, the transfer head 30 optionally further comprises a temperature regulating part 33, and the temperature regulating part 33 is located between the substrate 31 and the transfer part 32. The temperature adjusting unit 33 is used for adjusting the temperature of the transfer unit 32 to assist the transfer unit 32 to deform and adjust the size of the transfer coupling surface 321. The temperature control unit 33 may be provided in various manners, and any configuration that can generate a temperature change is within the scope of the present invention, and for example, a resistor, a transistor, or other devices that generate heat by energization are provided in the temperature control unit 33. Preferably, a device such as a thin film resistor or a thin film transistor that generates heat when energized is disposed in the temperature adjusting portion 33, and a planarization layer is disposed on the surface of the device, so as to facilitate good contact between the temperature adjusting portion 33 and the transfer portion 32, and further facilitate fixed connection and heat conduction between the temperature adjusting portion 33 and the transfer portion 32.
With continued reference to fig. 6, optionally, the number of temperature adjustment sections 33 is equal to the number of transfer sections 32, with one-to-one correspondence between temperature adjustment sections 33 and transfer sections 32. This arrangement facilitates controlling the temperature of the corresponding transfer portion 32 by controlling the operating state of each temperature regulating portion 33, thereby facilitating accurate adjustment of each transfer junction 321.
In fig. 6, the temperature control unit 33 and the transfer unit 32 are exemplarily illustrated as corresponding to each other, but in other embodiments, the temperature control unit 33 may be integrally provided. And, the temperature adjusting section 33 may be provided between the transfer section 32 and the substrate 31, and the temperature adjusting section 33 may be further provided on a side of the substrate 31 remote from the transfer section 32. In this case, if the temperature control unit 33 is located on the side of the substrate 31 away from the transfer unit 32, it is preferable that the substrate 31 is made of a material having a good thermal conductivity.
In one embodiment of the present invention, optionally, the shape memory polymer material comprises an electro-deformable material. The electro-deformable material is a material whose shape and size are related to voltage, and the electro-deformable material is added to the transfer portion 32, so that the surface area of the transfer portion 32 is changed under different voltage stimuli, and the size of the transfer junction surface 321 is changed. Thus, during mass transfer, the transfer interface 321 is sized in a similar manner as the previous embodiment, except that the predetermined condition is a voltage condition.
Preferably, the electro-deformable material comprises: a thermally deformable material and a conductive material. Because the material comprises the conductive material, the self of the electro-deformation material has the conductive performance, and the heat generated by the electrified current generates heat to enable the heat-induced deformation material to deform. Preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone, and polyamide; the conductive material includes: at least one of conductive carbon black, metal powder and conductive polymer. The conductive carbon black can be acetylene carbon black, and the electrostrictive material can be formed by adding a polycaprolactone and acetylene carbon black. The embodiment of the invention is arranged in such a way that the size of the transfer junction surface 321 can be changed by electrifying the transfer part 32, and the control mode is simple and easy to realize.
In the above-described embodiment where the transfer portion comprises an electro-deformable material, the voltage condition is optionally provided by a voltage module that adjusts the size of the transfer interface 321 by pressurizing the transfer head 30. Specifically, the voltage module includes an electrical connector that contacts the transfer portion 32 to pressurize the transfer portion 32. Alternatively, the substrate 31 includes a conductive material having a conductive property, the conductive contact is in contact with the substrate 31 to be conductive, and the substrate 31 is in contact with the transfer portion 32 to be conductive, so as to pressurize the transfer portion 32.
In one embodiment of the present invention, optionally, the shape memory polymer material comprises a light-induced deformation material. Preferably, the photo-deformable material comprises a polymeric material and a photochromic group; the polymer material includes: at least one of polyethylene, polyisoprene, polyester, copolyester, polyamide, copolyamide and polyurethane; photochromic groups include: at least one of azobenzene and spirobenzopyran. The light-induced deformation material is a material whose shape and size are related to the intensity and/or color of light, and the light-induced deformation material is added to the transfer part 32, so that the surface area of the transfer part 32 is changed under different light stimuli, and the size of the transfer joint surface 321 is changed. Thus, during mass transfer, the transfer interface 321 is resized in a similar manner as the previous embodiment, except that the predetermined condition is a lighting condition.
In the above-described embodiment in which the transfer portion comprises a light-deformable material, optionally, the lighting conditions are provided by a lighting module that adjusts the size of the transfer junction 321 by varying the lighting of the transfer portion 32. Specifically, the illumination module may be built in the transfer head 30 or may be external. Fig. 7 is a schematic cross-sectional view of another transfer head according to an embodiment of the present invention. Referring to fig. 7, in one embodiment of the present invention, the transfer head 30 further optionally includes an illumination portion 34, and the illumination portion 34 is located on a side of the substrate away from the transfer portion 32. The illumination unit 34 is used for illuminating the transfer unit 32 to assist the transfer unit 32 in deforming and adjusting the size of the transfer coupling surface 321. The illumination portion 34 may be disposed in various ways, and any structure capable of generating illumination variation is within the protection scope of the present invention, for example, the illumination portion 34 includes light emitting diodes arranged in an array, or the illumination portion 34 includes a light guide plate and light emitting diodes disposed at the edge of the light guide plate. Preferably, the substrate 31 is a transparent substrate to facilitate the light emitted from the light irradiation part 34 to irradiate on the transfer part 32. In other embodiments, the illumination portion 34 may be disposed between the substrate 31 and the transfer portion 32, and the specific implementation thereof is similar to that of the temperature adjustment portion, and is not described herein again.
In one embodiment of the present invention, optionally, the shape memory polymeric material comprises a chemosensing material. Preferably, the chemically-responsive material comprises: at least one of a pH value sensing material, a counter ion displacement sensing material, a chelating reaction sensing material, a phase transition reaction sensing material and a redox reaction sensing material; preferably, the chemically-responsive material comprises: at least one of a mixture of partially saponified polyacrylamide, polyvinyl alcohol, and polyacrylic acid. The chemical sensing material refers to a material with a shape and size related to chemical reaction, for example, when the chemical sensing material is placed in a chemical atmosphere with different pH values, reversible shape change can occur. By adding the chemical sensitive material to the transfer portion 32, the surface area of the transfer portion 32 can be changed under different chemical reaction conditions, and the size of the transfer coupling surface 321 can be changed. Thus, during mass transfer, the transfer interface 321 is sized in a similar manner as the previous embodiment, except that the predetermined conditions are chemical reaction conditions.
In the above-described embodiment where the transfer section includes a chemically-sensitive material, the chemical reaction conditions are optionally provided by a chemical gas module that adjusts the size of the transfer interface 321 by releasing different gases to the transfer head 30.
In addition to the above embodiments, it is preferable that the deformation of the transition portion 32 exhibits a gradation characteristic in the case where the temperature condition, the voltage condition, the light condition, or the chemical reaction condition is different. That is, in a certain range, the larger the difference in the preset conditions is, the larger the deformation of the transfer portion 32 is; conversely, the smaller the difference in preset conditions, the smaller the deformation of the transfer portion 32. With such an arrangement, it is beneficial to adjust the preset condition according to the size requirement of the transfer junction surface 321, and the transfer capability of the transfer head 30 is further improved, so that the yield of mass transfer is further improved.
In an embodiment of the present invention, the material of the transferring part 32 optionally includes a viscosity-adjustable polymer material, so that the viscosity of the transferring joint surface 321 is adjustable. The bonding force between the transfer bonding surface 321 and the chip is stronger when the viscosity of the transfer bonding surface 321 is higher, and conversely, the bonding force between the transfer bonding surface 321 and the chip is weaker when the viscosity of the transfer bonding surface 321 is lower. For example, the viscosity-adjustable polymer material may be a polymer material added with Polydimethylsiloxane (PDMS), and the viscosity of the polymer material changes with the change of temperature.
Illustratively, when the transfer head 30 is not in operation, providing customary conditions, the viscosity of the transfer engaging surface 321 is of moderate viscosity; when the transfer head 30 performs the picking operation, a first preset condition is provided, and the viscosity of the transfer bonding surface 321 is increased, so that the bonding force with the chip can be increased, and the transfer head 30 carries the chip to complete the picking operation; when the transfer head 30 performs the releasing operation, a second preset condition is provided, and the viscosity of the transfer bonding surface 321 becomes small, so that the bonding force with the chip can be reduced. Or, when the transfer head 30 does not work and the transfer head 30 performs the picking work, a first preset condition is provided, and the viscosity of the transfer bonding surface 321 is relatively high, so that the bonding force between the transfer bonding surface 321 and the chip is relatively high; when the transfer head 30 performs the releasing operation, a second preset condition is provided, and the viscosity of the transfer bonding surface 321 is relatively low, so that the bonding force between the transfer bonding surface 321 and the chip is relatively low. Or, when the transfer head 30 does not work and the transfer head 30 performs the releasing work, a second preset condition is provided, and the viscosity of the transfer bonding surface 321 is relatively low, so that the bonding force between the transfer bonding surface 321 and the chip is relatively low; when the transfer head 30 performs the picking operation, a first preset condition is provided, and the viscosity of the transfer bonding surface 321 is relatively high, so that the bonding force between the transfer bonding surface 321 and the chip is relatively high.
It should be noted that, in the above embodiments, the transferring portion 32 is exemplarily shown to change the bonding force by a stimulus of a single condition, but the present invention is not limited thereto, and in other embodiments, the transferring portion 32 may be provided to change the bonding force by a stimulus of two or more conditions as needed.
On the basis of the above embodiments, the transfer bonding surface 321 of the transfer portion 32 is optionally the same shape as the corresponding surface on the chip. For example, the bonding surface of the chip and the transfer bonding surface 321 are each rectangular, circular or other shapes. This arrangement facilitates attachment and alignment of the chip to the transfer head 30. Preferably, if the material of the transfer portion includes a viscosity-adjustable polymer material, the size of the transfer bonding surface is the same as that of the corresponding surface on the chip, or is larger than that of the corresponding surface on the chip, so that the corresponding surface on the chip is further favorably completely attached to the transfer bonding surface 321, and the bonding force when the chip is picked up is improved.
Fig. 8 is a schematic cross-sectional structure diagram of a transfer head bonded chip according to an embodiment of the present invention, and fig. 9 is a schematic cross-sectional structure diagram of another transfer head bonded chip according to an embodiment of the present invention. Referring to fig. 8 and 9, in one embodiment of the present invention, optionally, if the material of the transfer portion 32 includes a shape memory polymer material, the transfer bonding surface 321 in the large-size state is the same size as the corresponding surface on the chip 10, or larger than the corresponding surface on the chip 10; the transfer interface 321 in the small-size state is smaller than the corresponding surface on the chip 10. By the arrangement, when the chip 10 is picked up, the chip 10 can be completely contacted and bonded with the transfer bonding surface 321, and a large bonding force is achieved; and when the chip 10 is released, the chip 10 can contact and adhere to the transfer bonding surface 321 in a small area, and has a small bonding force. Since the bonding between the fixed bonding surface of the transfer portion 32 and the substrate 31 includes chemical bonding, the bonding force is strong, and the bonding between the fixed bonding surface 322 and the substrate 31 is strong and is not easily deformed during the adjustment process of the bonding force between the transfer portion 32 and the chip; however, the bonding of the transfer bonding surface 321 to the chip is physical bonding, and can be small under a predetermined condition. Therefore, the shape of the transfer portion 32 assumes a large-top and small-bottom state as shown in fig. 9.
In the above embodiments, the transfer unit 32 is directly bonded to the substrate 31, or the temperature control unit 33 and the light irradiation unit 32 are provided, which is not intended to limit the present invention. In other embodiments, other film structures may be disposed between the substrate 31 and the transfer part 32 as required, and the invention is not limited thereto.
It should be noted that, in the above embodiments, nine transfer portions 32 arranged in a 3 × 3 array are exemplarily shown on the substrate 31, and the present invention is not limited thereto. In other embodiments, the number and arrangement of the transferring portions 32 may be set according to the requirement, and the invention is not limited.
The embodiment of the invention also provides a transfer device. Fig. 10 is a schematic structural diagram of a transfer device according to an embodiment of the present invention. Referring to fig. 10, the transfer device includes: the conditional release module 40 is similar to the transfer head 30 provided in any embodiment of the present invention in technical principle and effect, and is not described herein again.
The condition releasing module 40 is used for providing a preset condition to the transfer head 30 to change the bonding force of the transfer bonding surface 321 and the chip. The conditional release module is determined according to different excitation conditions with adjustable binding force of the transfer head 30, and illustratively, the conditional release module 40 includes: at least one of a voltage module, a temperature regulation module, an illumination module, and a chemical gas module.
Referring to fig. 10, the transfer portion 32 illustratively includes an electro-deformable material, and the substrate 31 includes a conductive material having conductive properties; the voltage module includes an energizing contact 41, the energizing contact 41 is electrically conductive in contact with the substrate 31, and the substrate 31 is electrically conductive in contact with the transfer section 32 to pressurize the transfer section 32. With this arrangement, the transfer unit 32 can be controlled in a simple manner and can be easily implemented.
The embodiment of the invention also provides a transfer method, which can adopt the transfer head provided by any embodiment of the invention, and has corresponding beneficial effects, and the following specific description is provided. Fig. 11 is a schematic flow chart of a transfer method according to an embodiment of the present invention, and fig. 12 is a schematic state diagram of the transfer method according to the embodiment of the present invention in each step. Referring to fig. 11 and 12, the transfer method includes the steps of:
s110, providing a transfer head 30; the transfer head 30 comprises a substrate 31 and a plurality of transfer sections 32 located on the substrate 31, the transfer sections 32 comprising a transfer junction face 321 remote from the substrate 31 side.
The arrangement of the transfer head 30 may be the arrangement provided in any of the embodiments of the present invention. Preferably, the arrangement of the transfer portion 32 is the same as the arrangement of the chips, and the shape of the transfer bonding face 321 is the same as the top shape of the chips. When the transfer head 30 is not performing pick-up or release work, it is under the usual conditions, i.e. no special handling of the transfer head is performed. In FIG. 12, the example that the transfer head 30 includes a shape memory polymer material and the size of the transfer bonding surface 321 is slightly larger than the top of the chip under the conventional conditions is illustrated. In other embodiments, the transfer bonding face 321 may also be sized smaller than the chip top under customary conditions; alternatively, the transfer head 30 may be made of a viscosity-adjustable polymer material.
S120, picking up the chip 10 on the supply substrate 50 by using the transfer head 30, and providing a first preset condition to the transfer head 30 to increase the bonding force of the transfer bonding surface 321 and the chip.
The first predetermined condition is determined according to the sensitivity of the transfer head 30, and the first predetermined condition may be a heating condition, a cooling condition, a pressurizing condition, a lighting condition, a ph condition, a counter ion condition, a chelating reaction condition and/or a phase transition reaction condition. Illustratively, under the first preset condition, the transfer portion 32 deforms and stretches, the size of the transfer bonding surface 321 becomes larger, the contact area between the transfer portion 32 and the chip 10 becomes larger, the bonding force between the transfer bonding surface 321 and the chip is improved, the bonding between the transfer head 30 and the chip 10 is facilitated, and the transfer head 30 carries the chip 10 to complete picking.
S130, the transfer head 30 aligns and bonds the picked chip 10 with the back plate electrode 61, and provides a second preset condition to the transfer head 30 to reduce the bonding force between the transfer bonding surface 321 and the chip 10, so as to release the chip 10 onto the back plate 60.
The second preset condition is different from the first preset condition, the first preset condition or the second preset condition may be a usual condition, or both the first preset condition and the second preset condition are different from the usual condition. Alternatively, the greater the difference between the first preset condition and the second preset condition, the greater the difference between the bonding force of the transfer bonding surface 321 and the chip 10. The first preset condition corresponds to the second preset condition, namely the first preset condition is a heating condition, and the second preset condition is a cooling condition; the first preset condition is a cooling condition, and the second preset condition is a heating condition; the first preset condition is a conventional condition, and the second preset condition is a pressurization condition; the first preset condition is an acidic condition, the second preset condition is an alkaline condition, and so on, and the description is omitted. Illustratively, the chip 10 is bonded to the backplane electrode 61 to complete the bonding of the alignment electrodes, and meanwhile, a second preset condition is provided, the shape of the transfer portion 32 is shrunk, the area of the transfer bonding surface 321 is reduced, the contact area between the transfer portion 32 and the chip 10 is reduced, the bonding force between the transfer bonding surface 321 and the chip is reduced, and the chip 10 is released on the backplane 60.
In summary, since the bonding force between the transferring bonding surface 321 and the chip 10 is adjustable, the bonding force of the transferring bonding surface 321 can be adjusted according to the specific requirement of the picking and releasing bonding force during the mass transfer process. The chip picking and releasing device is beneficial to picking up and releasing the chip, and can meet the requirements of picking and releasing the chip at the same time. Therefore, the transfer head 30 provided by the embodiment of the present invention has a strong transfer capability, which is beneficial to increasing the yield of mass transfer.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A transfer head for transferring a chip, the transfer head comprising:
a substrate;
a plurality of transfer sections on the substrate; the transfer part comprises a transfer bonding surface far away from one side of the substrate, and the transfer bonding surface is used for bonding the chip; and the bonding force between the transfer bonding surface and the chip is adjustable.
2. Transfer head according to claim 1, characterized in that the size of the dimensions of the transfer interface is adjustable and/or the viscosity of the transfer interface is adjustable;
preferably, the material of the transfer part comprises a shape memory polymer material to adjust the size of the transfer bonding surface;
preferably, the material of the transfer part comprises a viscosity-adjustable polymer material to adjust the viscosity of the transfer bonding surface.
3. The transfer head of claim 2 wherein the material of the transfer portion comprises an electro-deformable material;
preferably, the electro-deformable material comprises: a thermally deformable material and a conductive material;
preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone, and polyamide;
the conductive material includes: at least one of conductive carbon black, metal powder and conductive polymer.
4. The transfer head of claim 2 wherein the material of the transfer portion comprises a heat-induced deformation material;
preferably, the thermally deformable material comprises: at least one of polynorbornene, polyurethane, high trans polyisoprene, styrene, 7-butadiene copolymer, fluorine-containing resin, polycaprolactone or polyamide;
preferably, the transfer head further comprises a temperature-regulating part located between the substrate and the transfer part; alternatively, the temperature adjustment portion is located on a side of the substrate away from the transfer portion.
5. The transfer head of claim 2 wherein the material of the transfer portion comprises a photo-deformable material;
preferably, the photo-deformable material comprises a high molecular material and a photochromic group;
preferably, the polymer material includes: at least one of polyethylene, polyisoprene, polyester, copolyester, polyamide, copolyamide and polyurethane;
the photochromic group comprises: at least one of azobenzene and spirobenzopyran.
6. The transfer head of claim 2 wherein the material of the transfer portion comprises a chemically-sensitive material;
preferably, the chemically-responsive material comprises: at least one of a pH value sensing material, a counter ion displacement sensing material, a chelating reaction sensing material, a phase transition reaction sensing material and a redox reaction sensing material;
preferably, the chemically-responsive material comprises: at least one of a mixture of partially saponified polyacrylamide, polyvinyl alcohol, and polyacrylic acid;
preferably, the transfer head further comprises an illumination section located between the substrate and the transfer section; or the illumination part is positioned on one side of the substrate far away from the transfer part.
7. Transfer head according to any of claims 1 to 6, characterized in that the transfer interface of the transfer section is of the same shape as the corresponding surface on the chip;
preferably, the material of the transfer part comprises a shape memory polymer material, and the size of the transfer bonding surface is adjustable; the transfer bonding surface in the large-size state has the same size as the corresponding surface on the chip or is larger than the corresponding surface on the chip; the transfer bonding surface in the small-size state is smaller than the corresponding surface on the chip;
or the material of the transfer part comprises a viscosity-adjustable high polymer material, the viscosity of the transfer bonding surface is adjustable, and the size of the transfer bonding surface is the same as or larger than that of the corresponding surface on the chip.
8. A transfer device, comprising:
a transfer head according to any one of claims 1-7;
and the condition releasing module is used for providing preset conditions for the transfer head so as to change the bonding force between the transfer bonding surface and the chip.
9. The transfer device of claim 8, wherein the conditional release module comprises: at least one of a voltage module, a temperature regulation module, an illumination module, and a chemical gas module.
10. A method of transferring, comprising:
providing a transfer head; the transfer head comprises a substrate and a plurality of transfer parts positioned on the substrate, wherein each transfer part comprises a transfer bonding surface far away from one side of the substrate;
picking up a chip on a supply substrate by using the transfer head, and providing a first preset condition for the transfer head to increase the bonding force between the transfer bonding surface and the chip;
the transfer head aligns and combines the picked chip with a back plate electrode, and simultaneously provides a second preset condition for the transfer head so as to reduce the bonding force between the transfer bonding surface and the chip and release the chip to the back plate; wherein the second preset condition is different from the first preset condition.
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| CN202110482818.1A CN113206034A (en) | 2021-04-30 | 2021-04-30 | Transfer head, transfer device, and transfer method |
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| CN202110482818.1A CN113206034A (en) | 2021-04-30 | 2021-04-30 | Transfer head, transfer device, and transfer method |
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Application publication date: 20210803 |