CN113205989A - Transmission electron microscope high-resolution in-situ temperature difference chip and preparation method thereof - Google Patents
Transmission electron microscope high-resolution in-situ temperature difference chip and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
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Abstract
The invention relates to a transmission electron microscope high resolution in-situ temperature difference chip and a preparation method thereof, wherein the in-situ temperature difference chip comprises a substrate, wherein two sides of the substrate are covered with insulating layers, a heating layer is arranged on the front surface of the substrate, the heating layer comprises two symmetrically arranged heating units, each heating unit comprises a heating area formed by heating wires, two contact electrodes and a connecting circuit for connecting the heating wires and the contact electrodes, wherein the heating wires are distributed to form a roughly square heating area, and the two contact electrodes are positioned on the same side edge of the substrate; a gap for carrying a sample is arranged between the heating zones of the two heating units; the region of substrate except that the heating unit is corroded fretwork to form the first support region that is used for supporting the zone of heating and the second support region that is used for supporting interconnecting link, this chip has fast to go up and down the temperature, accurate temperature measurement accuse temperature, continuously maintains accurate difference in temperature, resolution ratio height, sample drift rate low advantage.
Description
Technical Field
The invention relates to the field of in-situ characterization, in particular to a transmission electron microscope high-resolution in-situ temperature difference chip and a preparation method thereof.
Background
The in-situ transmission electron microscope technology is widely applied to various scientific fields by the advantages of ultrahigh spatial resolution (atomic scale) and ultrafast time resolution (millisecond scale), and provides a brand new thought and research method for researchers to explore the microstructure of a novel material. The method mainly comprises the steps of establishing a visual window in an electron microscope, introducing external field effects such as a thermal field, an optical field, an electrochemical field and the like, and carrying out real-time dynamic in-situ test on the appearance of a sample so as to obtain the direct correlation between the material property and the structure of the material. Researchers can capture the dynamic induction of the sample to the environment through an in-situ testing technology, wherein the dynamic induction comprises important information such as size, form, crystal structure, atomic structure, chemical bond, heat energy change and the like. The morphological change of the material at the atomic scale under the action of the external field becomes the root of the research and development of the material. Can be widely used for microstructure analysis, observation of nano material research and the like, and has extremely high application value in the aspects of biology, materials and semiconductor electronic materials.
The conventional in-situ chip has the defects of low temperature rise and drop rate, insufficient temperature measurement and control accuracy, low resolution, high sample drift rate and the like, and does not have a chip structure capable of realizing continuous and accurate temperature difference on micron-sized samples.
Disclosure of Invention
The invention aims to provide a transmission electron microscope high-resolution in-situ temperature difference chip which has the advantages of rapid temperature rise and drop, accurate temperature measurement and control, continuous maintenance of accurate temperature difference, high resolution and low sample drift rate.
The specific scheme is as follows:
a transmission electron microscope high resolution in-situ temperature difference chip comprises a substrate, wherein two sides of the substrate are covered with insulating layers, a heating layer is arranged on the front side of the substrate and comprises two symmetrically arranged heating units, each heating unit comprises a heating area formed by heating wires, two contact electrodes and a connecting circuit for connecting the heating wires and the contact electrodes, the heating wires are distributed to form an approximately square heating area, the heating wires are spaced from each other at a certain distance and are not in contact with each other, and the two contact electrodes are positioned on the same side edge of the substrate; a gap for carrying a sample is arranged between the heating zones of the two heating units; the substrate is etched and hollowed out in the area except the heating unit, so that a first supporting area for supporting the heating area and a second supporting area for supporting the connecting circuit are formed.
Further, the substrate is a silicon substrate, and the insulating layer is a silicon nitride or silicon oxide insulating layer.
Furthermore, the external dimension of the transmission electron microscope high-resolution in-situ temperature difference chip is 2 x 2-10 x 10mm, and preferably 4 x 8 mm.
Further, the first support region has a size of 0.2 x 0.2mm to 0.8 x 0.8 mm; the second support region has a dimension of 0.5 x 0.2mm to 2.5 x 0.8 mm; the gap between the two heating zones has a size of 0.01 x 0.2mm to 0.05 x 0.8 mm.
Further, the thickness of the insulating layer is 5-200 nm; the thickness of the substrate is 50-500 um.
Furthermore, each heating zone all is provided with a set of equivalent circuit, and this equivalent circuit can realize the power supply heat production and the resistance value after real time monitoring heater strip generates heat simultaneously.
Furthermore, the side length of a heating zone formed by the heating wires is 0.15-0.5mm, and the thickness is 50-500 nm.
Furthermore, the heating wire is made of gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide.
The invention also provides a preparation method of the transmission electron microscope high-resolution in-situ temperature difference chip, which comprises the following steps:
s1, preparing a Si (100) wafer A with silicon nitride or silicon oxide insulating layers deposited on two sides by low-pressure chemical vapor deposition, wherein the thickness of the insulating layers is 5-200nm, and the two sides of the wafer A are respectively defined as a front side and a back side;
s2, transferring the heating area, the contact electrode and a connecting circuit between the heating area and the contact electrode from the photoetching mask to the front surface of the wafer through a photoetching process, developing in an orthogonal developing solution, and cleaning the surface with deionized water to obtain a wafer A-1;
preferably, the lithography process is exposed in a hard contact mode of an ultraviolet lithography machine; the photoresist in the photoetching process is AZ 5214E; the development time was 50 s;
more preferably, the exposure time is 15 s;
s3, etching the insulating layer at the pattern of the front heating unit of the wafer A-1 by a reactive ion etching process to obtain a wafer A-2;
s4, evaporating a metal material on the front side of the wafer A-2 by using a thermal evaporation coating process to form a heating electrode, then putting the wafer with the front side facing upwards into acetone for soaking, finally washing with the acetone, and removing the photoresist to obtain a wafer A-3;
preferably, the metal of the metal heating wire is metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide; the thickness of the metal heating wire is 50nm-500 nm;
s5, growing a layer of silicon nitride or silicon oxide or aluminum oxide as a protective layer on a silicon area supporting the heating wire on the front surface of the wafer A-3 by utilizing a PECVD process to obtain a wafer A-4;
preferably, the thickness of the protective layer is 30-150 nm;
s6, transferring the area to be corroded from the photoetching mask plate to the back of the wafer by utilizing a photoetching process, developing in positive photoresist developing solution, and cleaning the surface by using deionized water to obtain a wafer A-5;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the photoresist used in the photoetching process is AZ 5214E; the development time was 65 s;
more preferably, the exposure time is 20 s;
s7, etching silicon nitride or silicon oxide or aluminum oxide on a to-be-etched area on the back of the wafer A-5 by using a reactive ion etching process, then sequentially soaking the back of the wafer upwards in acetone, finally washing with acetone, and removing photoresist to obtain a wafer A-6;
s8, placing the wafer A-6 with the back face upward into a potassium hydroxide solution for wet etching until the bare substrate silicon is completely corroded, taking out the wafer, washing the wafer with a large amount of deionized water, and then drying the wafer by blowing to obtain a wafer A-7;
preferably, the mass percentage concentration of the potassium hydroxide solution is 20%; the etching temperature is 70-90 ℃, and the etching time is 1.5-4 h;
more preferably, the etching temperature is 80 ℃; the etching time is 2 h;
preferably, the silicon support layer of the heater wire has a size of 0.3 x 0.3mm to 0.5 x 0.5 mm; the size of the silicon support layer between the contact electrode and the heating wire is 1.0 x 0.2mm-2.0 x 0.4 mm; the gap between the two micro heaters is 0.01 x 0.3mm-0.02 x 0.5 mm;
and S9, carrying out laser scribing on the wafer A-7, and dividing the wafer into independent chips.
Compared with the prior art, the transmission electron microscope high-resolution in-situ temperature difference chip provided by the invention has the following advantages: the transmission electron microscope high-resolution in-situ temperature difference chip provided by the invention has the advantages that the heat insulation area around the heating area is large, the two heating units have micron-sized intervals, micron-sized samples can be carried, and accurate temperature difference control and rapid temperature rise and drop can be realized through program temperature control.
Drawings
FIG. 1 is a top view of a TEM high resolution in-situ temperature difference chip.
Fig. 2 shows an enlarged view of the heating zone.
Fig. 3 shows a cross-sectional view at a-a in fig. 1.
Fig. 4 shows a cross-sectional view at B-B in fig. 1.
Detailed Description
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention will now be further described with reference to the accompanying drawings and detailed description.
Example 1
As shown in fig. 1-4, the present embodiment provides a transmission electron microscope high resolution in-situ thermoelectric chip, which includes a substrate 1, and an insulating layer 10 is covered on both the front and back surfaces of the substrate 1. The substrate in this embodiment is a silicon substrate, and the insulating layer is a silicon nitride or silicon oxide insulating layer.
The front surface of the substrate 1 is provided with a heating layer 11, the heating layer 11 comprises two symmetrically arranged heating units, each heating unit comprises a heating zone formed by a heating wire 111, two contact electrodes 112 and a connecting line 113 connecting the heating wire 111 and the contact electrodes 112, wherein the heating wires 111 are arranged to form a substantially square heating zone, the heating wires 111 have a certain distance from each other and are not in contact with each other, and the two contact electrodes 112 are located at the same side edge of the substrate 1.
Proper gaps are arranged between the heating areas of the two heating units, and the heating areas are not contacted with each other and are used for carrying samples; with the sample-carrying region as a center, the region of the middle portion of the substrate 1 other than the region for supporting the heater wire 111 and the connecting wire 113 is hollowed out, that is, the region of the middle portion of the substrate 1 other than the region for supporting the heater wire 111 and the connecting wire 113 is hollowed out by etching, thereby forming a first supporting region 101 for supporting the heating region and a second supporting region 102 for supporting the connecting wire 113.
As a preferred embodiment of this embodiment, the external dimension of the chip for high-resolution in-situ temperature difference of the transmission electron microscope is preferably 2 × 2 to 10 × 10 mm; more preferably 4 x 8 mm.
As a preferable aspect of this embodiment, the size of the first supporting region 101 is preferably 0.2 × 0.2mm to 0.8 × 0.8 mm; the dimensions of the second support region 102 are preferably 0.5 x 0.2mm-2.5 x 0.8 mm; the gap between the two heating zones is 0.01 x 0.2mm-0.05 x 0.8mm in size.
As a preferable aspect of this embodiment, the thickness of the insulating layer 10 is 5 to 200 nm; the thickness of the substrate 1 is 50-500 um.
As a preferable scheme of this embodiment, each heating unit is configured as a set of equivalent circuits, and the equivalent circuits can simultaneously achieve the heating by power supply and the real-time monitoring of the resistance value of the heating wire after heating.
Preferably, the heating zone consisting of the heating wire has a side length of 0.15-0.5mm and a thickness of 50-500 nm.
Preferably, the heating wire is made of metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide.
Example 2
The embodiment provides a preparation method of a transmission electron microscope high-resolution in-situ temperature difference chip, which comprises the following steps:
s1, preparing a Si (100) wafer A with silicon nitride or silicon oxide insulating layers deposited on two sides by low-pressure chemical vapor deposition, wherein the thickness of the insulating layers is 5-200nm, and the two sides of the wafer A are respectively defined as a front side and a back side;
s2, transferring the heating area, the contact electrode and a connecting circuit between the heating area and the contact electrode from the photoetching mask to the front surface of the wafer through a photoetching process, developing in an orthogonal developing solution, and cleaning the surface with deionized water to obtain a wafer A-1;
preferably, the lithography process is exposed in a hard contact mode of an ultraviolet lithography machine; the photoresist in the photoetching process is AZ 5214E; the development time was 50 s;
more preferably, the exposure time is 15 s;
s3, etching the insulating layer at the pattern of the front heating unit of the wafer A-1 by a reactive ion etching process to obtain a wafer A-2;
s4, evaporating a metal material on the front side of the wafer A-2 by using a thermal evaporation coating process to form a heating electrode, then putting the wafer with the front side facing upwards into acetone for soaking, finally washing with the acetone, and removing the photoresist to obtain a wafer A-3;
preferably, the metal of the metal heating wire is metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide; the thickness of the metal heating wire is 50nm-500 nm;
s5, growing a layer of silicon nitride or silicon oxide or aluminum oxide as a protective layer on a silicon area supporting the heating wire on the front surface of the wafer A-3 by utilizing a PECVD process to obtain a wafer A-4;
preferably, the thickness of the protective layer is 30-150 nm;
s6, transferring the area to be corroded from the photoetching mask plate to the back of the wafer by utilizing a photoetching process, developing in positive photoresist developing solution, and cleaning the surface by using deionized water to obtain a wafer A-5;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the photoresist used in the photoetching process is AZ 5214E; the development time was 65 s;
more preferably, the exposure time is 20 s;
s7, etching silicon nitride or silicon oxide or aluminum oxide on a to-be-etched area on the back of the wafer A-5 by using a reactive ion etching process, then sequentially soaking the back of the wafer upwards in acetone, finally washing with acetone, and removing photoresist to obtain a wafer A-6;
s8, placing the wafer A-6 with the back face upward into a potassium hydroxide solution for wet etching until the bare substrate silicon is completely corroded, taking out the wafer, washing the wafer with a large amount of deionized water, and then drying the wafer by blowing to obtain a wafer A-7;
preferably, the mass percentage concentration of the potassium hydroxide solution is 20%; the etching temperature is 70-90 ℃, and the etching time is 1.5-4 h;
more preferably, the etching temperature is 80 ℃; the etching time is 2 h;
preferably, the silicon support layer of the heater wire has a size of 0.3 x 0.3mm to 0.5 x 0.5 mm; the size of the silicon support layer between the contact electrode and the heating wire is 1.0 x 0.2mm-2.0 x 0.4 mm; the gap between the two micro heaters is 0.01 x 0.3mm-0.02 x 0.5 mm;
and S9, carrying out laser scribing on the wafer A-7, and dividing the wafer into independent chips.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The utility model provides a transmission electron microscope high resolution normal position difference in temperature chip which characterized in that: the heating device comprises a substrate, wherein two sides of the substrate are covered with insulating layers, a heating layer is arranged on the front side of the substrate, the heating layer comprises two heating units which are symmetrically arranged, each heating unit comprises a heating area formed by heating wires, two contact electrodes and a connecting circuit for connecting the heating wires and the contact electrodes, the heating wires are distributed to form a roughly square heating area, the heating wires are arranged at certain intervals and are not in contact with each other, and the two contact electrodes are positioned on the same side edge of the substrate; a gap for carrying a sample is arranged between the heating zones of the two heating units; the substrate is etched and hollowed out in the area except the heating unit, so that a first supporting area for supporting the heating area and a second supporting area for supporting the connecting circuit are formed.
2. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the substrate is a silicon substrate, and the insulating layer is a silicon nitride or silicon oxide insulating layer.
3. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the external dimension of the transmission electron microscope high-resolution in-situ temperature difference chip is 2 x 2-10 x 10mm, and is preferably 4 x 8 mm.
4. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the first support region has a size of 0.2 x 0.2mm to 0.8 x 0.8 mm; the second support region has a dimension of 0.5 x 0.2mm to 2.5 x 0.8 mm; the gap between the two heating zones has a size of 0.01 x 0.2mm to 0.05 x 0.8 mm.
5. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the thickness of the insulating layer is 5-200 nm; the thickness of the substrate is 50-500 um.
6. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: each heating zone all is provided with a set of equivalent circuit, and this equivalent circuit can realize the power supply heat production simultaneously and the resistance value after real time monitoring heater strip heats.
7. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the side length of a heating zone formed by the heating wires is 0.15-0.5mm, and the thickness is 50-500 nm.
8. The chip for transmitting electron microscope high resolution in-situ temperature difference according to claim 1, characterized in that: the heating wire is made of gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide.
9. A preparation method of a transmission electron microscope high-resolution in-situ temperature difference chip is characterized by comprising the following steps:
s1, preparing a Si (100) wafer A with silicon nitride or silicon oxide insulating layers deposited on two sides by low-pressure chemical vapor deposition, wherein the thickness of the insulating layers is 5-200nm, and the two sides of the wafer A are respectively defined as a front side and a back side;
s2, transferring the heating area, the contact electrode and a connecting circuit between the heating area and the contact electrode from the photoetching mask to the front surface of the wafer through a photoetching process, developing in an orthogonal developing solution, and cleaning the surface with deionized water to obtain a wafer A-1;
preferably, the lithography process is exposed in a hard contact mode of an ultraviolet lithography machine; the photoresist in the photoetching process is AZ 5214E; the development time was 50 s;
more preferably, the exposure time is 15 s;
s3, etching the insulating layer at the pattern of the front heating unit of the wafer A-1 by a reactive ion etching process to obtain a wafer A-2;
s4, evaporating a metal material on the front side of the wafer A-2 by using a thermal evaporation coating process to form a heating electrode, then putting the wafer with the front side facing upwards into acetone for soaking, finally washing with acetone, and removing the photoresist to obtain a wafer A-3;
preferably, the metal of the metal heating wire is metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide; the thickness of the metal heating wire is 50nm-500 nm;
s5, growing a layer of silicon nitride or silicon oxide or aluminum oxide as a protective layer on a silicon area supporting the heating wire on the front surface of the wafer A-3 by utilizing a PECVD process to obtain a wafer A-4;
preferably, the thickness of the protective layer is 30-150 nm;
s6, transferring the area to be corroded from the photoetching mask plate to the back of the wafer by utilizing a photoetching process, developing in positive photoresist developing solution, and cleaning the surface by using deionized water to obtain a wafer A-5;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the photoresist used in the photoetching process is AZ 5214E; the development time was 65 s;
more preferably, the exposure time is 20 s;
s7, etching silicon nitride or silicon oxide or aluminum oxide on a to-be-etched area on the back of the wafer A-5 by using a reactive ion etching process, then sequentially soaking the back of the wafer upwards in acetone, finally washing with acetone, and removing photoresist to obtain a wafer A-6;
s8, placing the wafer A-6 with the back face upward into a potassium hydroxide solution for wet etching until the bare substrate silicon is completely corroded, taking out the wafer, washing the wafer with a large amount of deionized water, and then drying the wafer by blowing to obtain a wafer A-7;
preferably, the mass percentage concentration of the potassium hydroxide solution is 20%; the etching temperature is 70-90 ℃, and the etching time is 1.5-4 h;
more preferably, the etching temperature is 80 ℃; the etching time is 2 h;
preferably, the silicon support layer of the heater wire has a size of 0.3 x 0.3mm to 0.5 x 0.5 mm; the size of the silicon support layer between the contact electrode and the heating wire is 1.0 x 0.2mm-2.0 x 0.4 mm; the gap between the two micro heaters is 0.01 x 0.3mm-0.02 x 0.5 mm;
and S9, carrying out laser scribing on the wafer A-7, and dividing the wafer into independent chips.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114018959A (en) * | 2021-11-09 | 2022-02-08 | 北京工业大学 | Transmission electron microscope in-situ atomic scale electro-thermal coupling chip and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975348A (en) * | 2019-03-07 | 2019-07-05 | 北京工业大学 | A kind of in-situ heat electric performance testing device, preparation method and system |
| CN210534032U (en) * | 2019-06-19 | 2020-05-15 | 中国科学院金属研究所 | Chip for testing in-situ mechanical property of electron microscope |
| CN111312573A (en) * | 2020-03-12 | 2020-06-19 | 厦门超新芯科技有限公司 | Transmission electron microscope high-resolution in-situ liquid phase heating chip and preparation method thereof |
| CN212277151U (en) * | 2020-08-26 | 2021-01-01 | 厦门超新芯科技有限公司 | Transmission electron microscope high-resolution in-situ temperature difference chip |
-
2020
- 2020-08-26 CN CN202010869706.7A patent/CN113205989A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975348A (en) * | 2019-03-07 | 2019-07-05 | 北京工业大学 | A kind of in-situ heat electric performance testing device, preparation method and system |
| CN210534032U (en) * | 2019-06-19 | 2020-05-15 | 中国科学院金属研究所 | Chip for testing in-situ mechanical property of electron microscope |
| CN111312573A (en) * | 2020-03-12 | 2020-06-19 | 厦门超新芯科技有限公司 | Transmission electron microscope high-resolution in-situ liquid phase heating chip and preparation method thereof |
| CN212277151U (en) * | 2020-08-26 | 2021-01-01 | 厦门超新芯科技有限公司 | Transmission electron microscope high-resolution in-situ temperature difference chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114018959A (en) * | 2021-11-09 | 2022-02-08 | 北京工业大学 | Transmission electron microscope in-situ atomic scale electro-thermal coupling chip and preparation method thereof |
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