CN113194591B - Langmuir probe, system and method for on-orbit decontamination - Google Patents

Langmuir probe, system and method for on-orbit decontamination Download PDF

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CN113194591B
CN113194591B CN202110441673.0A CN202110441673A CN113194591B CN 113194591 B CN113194591 B CN 113194591B CN 202110441673 A CN202110441673 A CN 202110441673A CN 113194591 B CN113194591 B CN 113194591B
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operational amplifier
resistor
heating element
probe
input end
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CN113194591A (en
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杜清府
王进
郭怀龙
张清和
邢赞扬
李建泉
李延辉
郭新
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Shandong University
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/0006Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A90/00Technologies having an indirect contribution to adaptation to climate change
    • Y02A90/10Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation

Abstract

The present disclosure provides an on-orbit desmear langmuir probe, system and method, the probe comprising: a collecting electrode, an insulating layer, a protective electrode, a heating element and a housing; the first end of the collecting electrode is exposed, the outer side of the middle part of the collecting electrode is coated with an insulating layer, the outer side of the insulating layer is coated with a protective electrode, the second end of the collecting electrode is positioned in the shell, and the second end of the collecting electrode is connected with the heating element; in the system, a signal output port of a processor is connected with a magnetic latching relay, the magnetic latching relay is connected with a current stabilizing circuit, one end of the current stabilizing circuit is connected with a heating element, the other end of the current stabilizing circuit is connected with a voltage follower, the voltage follower is connected with a differential amplifying circuit, the differential amplifying circuit is connected with an analog-to-digital conversion interface of the processor, and the digital-to-analog conversion interface of the processor is connected with the current stabilizing circuit; the method adopts a low-pressure heating mode to remove pollution, is safe and reliable, consumes low energy, and simultaneously realizes real-time monitoring of the temperature of the probe.

Description

Langmuir probe, system and method for on-orbit decontamination
Technical Field
The disclosure relates to the technical field of plasma science, in particular to an on-orbit decontamination Langmuir probe, a system and a method.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
The ionosphere is the region where the earth's atmosphere is partially ionized by solar radiation, is an important ring in the solar energy transmission chain, is an important component of the spatial weather, and is the geospatial region closest to the space physics application level. As a main medium for human radio wave propagation and an important place for aerospace activities, the state change of an ionosphere can directly influence human communication, navigation, remote sensing positioning, aerospace activities and the like. The change of the state of the ionized layer is mainly reflected in the change of physical parameters such as plasma density, temperature and the like. Therefore, ionospheric plasma density and temperature sensing are important.
Langmuir probes have been widely used in ionospheric plasma diagnostics and laboratory manual plasma diagnostics because of their simplicity and reliability. The Langmuir probe diagnosis method is that a metal electrode is immersed into plasma, then a scanning voltage is applied to the electrode by using a control circuit, and a micro-current signal on the probe is collected to obtain an I-V curve, so that the physical parameters of the plasma are obtained by combining a diagnosis theory. The Langmuir probe can measure the electron density (N) of the plasma in situ, whether in a space environment or a laboratory simulated environment e ) Electron temperature (T) e ) And (3) equal characteristic parameters.
The inventor finds that the surface of the probe is easily adsorbed by water vapor and various gas molecules, so that the pollution is caused, and the accuracy of a diagnosis result is influenced. The contaminated probe is directly shown in the way that a forward scanning curve and a reverse scanning curve have certain hysteresis, so that the diagnosed plasma parameters are influenced. Experiments show that the probe can be polluted by water vapor and gas molecules within seconds or even one second after being exposed in the atmospheric environment, and the obvious hysteresis effect is shown. Langmuir probes used on sounding rockets and satellites are contaminated by the atmosphere with a high probability between the completion of installation and the launch, so that the in-orbit decontamination device has important significance on the accuracy of the diagnosis result of the Langmuir probe. At present, most of on-track pollution removal devices adopt a mode of applying high voltage to a probe to attract surrounding charged particles to bombard the probe, but the mode needs a complex boosting device and a large amount of electric energy consumption, the bombardment effect is also influenced by the density of the plasma, and the consistent bombardment effect at each time cannot be ensured.
Disclosure of Invention
In order to solve the defects of the prior art, the on-orbit decontamination Langmuir probe, the system and the method are provided, the pollution is decontaminated by adopting a low-pressure heating mode, the safety and the reliability are realized, the energy consumption is low, and the real-time monitoring of the temperature of the probe is realized.
In order to achieve the purpose, the following technical scheme is adopted in the disclosure:
a first aspect of the disclosure provides an on-orbit decontamination langmuir probe.
An on-orbit desmutting langmuir probe, comprising: a collecting electrode, an insulating layer, a protective electrode, a heating element and a housing;
the first end of collecting electrode exposes, and the middle part outside cladding of collecting electrode has the insulating layer, and the insulating layer outside cladding has guard electrode, and the second end of collecting electrode is located the shell, and the second end and the heating element winding contact of collecting electrode.
Further, the heating element is a platinum wire wound around the second end of the collecting electrode.
A second aspect of the present disclosure provides a langmuir probe on-track abatement system.
An on-track langmuir probe decontamination system for the on-track langmuir probe according to the first aspect of the present disclosure, wherein the heating element is connected to a voltage-controlled constant current source circuit, and the voltage-controlled constant current source circuit is connected to a processor.
Furthermore, a signal output port of the processor is connected with a magnetic latching relay, the magnetic latching relay is connected with a current stabilizing circuit, one end of the current stabilizing circuit is connected with the heating element, the other end of the current stabilizing circuit is connected with a voltage follower, the voltage follower is connected with a differential amplifying circuit, the differential amplifying circuit is connected with an analog-to-digital conversion interface of the processor, and the digital-to-analog conversion interface of the processor is connected with the current stabilizing circuit.
Furthermore, the current stabilizing circuit comprises a first operational amplifier and a second operational amplifier, a digital-analog output port of the processor is connected with a reverse input end of the first operational amplifier through a first resistor, a power supply is connected with a positive input end of the first operational amplifier through a second resistor, a third resistor and a first capacitor which are mutually connected in parallel are connected between the negative input end and the output end of the first operational amplifier, the positive input end of the first operational amplifier is grounded through a fourth resistor, and the fourth resistor is connected with a second capacitor in parallel;
the output end of the first operational amplifier is connected with the positive input end of the second operational amplifier, the negative input end of the second operational amplifier is connected with the magnetic latching relay, the junction of the negative input end of the second operational amplifier and the magnetic latching relay is connected with the emitting electrode of the triode, the base electrode of the triode is connected with the output end of the second operational amplifier, the collector electrode of the triode is connected with one end of the heating element, and the other end of the heating element is grounded.
Furthermore, the voltage follower comprises a third operational amplifier, a junction of a collector of the triode and the heating element is connected with a positive input end of the third operational amplifier, and a negative input end of the third operational amplifier is connected with an output end.
Furthermore, the differential amplifier circuit comprises a fourth operational amplifier, the output end of the third operational amplifier is connected with the positive input end of the fourth operational amplifier through a fifth resistor, the positive input end of the fourth operational amplifier is grounded through a sixth resistor, the negative input end of the fourth operational amplifier is grounded through a seventh resistor, and the negative input end of the fourth operational amplifier is connected with the output end through an eighth resistor.
Furthermore, the magnetic latching relay comprises a gating switch, a first resistor and a second resistor which are connected in parallel, the power supply is connected with the gating switch, the gating switch is connected with the first resistor or the second resistor, and the switching of the magnetic latching relay is controlled by the processor, wherein the resistance value of the first resistor is smaller than that of the second resistor.
A third aspect of the present disclosure provides a langmuir probe on-rail decontamination method using the langmuir probe on-rail decontamination system described in the second aspect of the present disclosure, comprising the following processes:
when the circuit is used for heating and decontamination, the processor controls the magnetic latching relay to be switched to the first resistor, current flows through the circuit at a constant rate, and current larger than a preset value is loaded on the heating element, so that heating and decontamination of the Langmuir probe are realized.
A fourth aspect of the present disclosure provides an on-track temperature measurement method using the langmuir probe described in the second aspect of the present disclosure, comprising the following steps:
when the probe is used for measuring the temperature, the processor controls the magnetic latching relay to be switched to the second resistor, the milliampere-level current is loaded on the heating element, and the differential amplification circuit amplifies the voltages at the two ends of the heating element and inputs the amplified voltages to the analog-to-digital conversion port of the processor.
Compared with the prior art, the beneficial effect of this disclosure is:
1. the Langmuir probe, the system and the method for on-orbit decontamination adopt a low-pressure heating mode to decontaminate, are safe and reliable, have low energy consumption, and simultaneously realize real-time monitoring of the temperature of the probe.
2. According to the Langmuir probe, the system and the method for on-track decontamination, when heating and decontamination are needed, a processor is used for controlling access of a large current, a small current is accessed when temperature measurement is needed, voltage signals at two ends of a platinum resistor are subjected to differential amplification, then the processor is used for performing analog-to-digital conversion, the resistance value of the platinum resistor wire is calculated according to the amplification factor and the current magnitude, the temperature of the probe at the moment is obtained in a table look-up mode, and the control and the conversion of decontamination and temperature measurement are realized through a voltage-controlled constant current source circuit.
Advantages of additional aspects of the disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosure.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure and are not to limit the disclosure.
Figure 1 is a schematic structural diagram of an on-track desmear langmuir probe provided in example 1 of the present disclosure.
Fig. 2 is a schematic diagram of a constant current source circuit provided in embodiment 2 of the present disclosure.
Figure 3 is a schematic structural diagram of an on-track desmear system with langmuir probes provided in embodiment 2 of the present disclosure.
1. A collecting electrode; 2. an insulating layer; 3. a guard electrode; 4. a heating element; 5. a housing.
Detailed Description
The present disclosure is further illustrated by the following examples in conjunction with the accompanying drawings.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present disclosure. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The embodiments and features of the embodiments in the present disclosure may be combined with each other without conflict.
Example 1:
as shown in fig. 1, the present disclosure embodiment 1 provides an on-orbit desmutting langmuir probe, comprising: a collecting electrode 1, an insulating layer 2, a guard electrode 3, a heating element 4, and a housing 5;
the first end of collecting electrode 1 is exposed, and the middle part outside cladding of collecting electrode 1 has insulating layer 2, and the cladding of the 2 outside of insulating layer has guard electrode 3, and the second end of collecting electrode 1 is located shell 5, and the second end of collecting electrode 1 is connected with heating element 4.
The heating element 4 is a platinum wire, the platinum wire is wound at the second end of the collecting electrode, the platinum wire with the diameter of 0.025mm is tightly wound on the collecting electrode, the length of the platinum wire is about 2cm, the room temperature resistance is about 10 omega, and two ends of the heating wire are led out by leads and connected to the voltage-controlled constant current source circuit.
Example 2:
as shown in fig. 2 and fig. 3, embodiment 2 of the present disclosure provides an on-rail langmuir probe decontamination system for on-rail langmuir probe in embodiment 1 of the present disclosure, wherein the heating element is connected to a voltage-controlled constant current source circuit, and the voltage-controlled constant current source circuit is connected to the processor MCU.
The signal output port of the processor MCU is connected with the magnetic latching relay, the magnetic latching relay is connected with the current stabilizing circuit, one end of the current stabilizing circuit is connected with the heating element, the other end of the current stabilizing circuit is connected with the voltage follower, the voltage follower is connected with the differential amplification circuit, the differential amplification circuit is connected with the analog-to-digital conversion interface of the processor, and the digital-to-analog conversion interface of the processor is connected with the current stabilizing circuit.
The current stabilizing circuit comprises a first operational amplifier OP1 and a second operational amplifier OP2, a digital-analog output port of the processor MCU is connected with a reverse input end of the first operational amplifier OP1 through a first resistor R, a power supply VCC is connected with a positive input end of the first operational amplifier OP1 through a second resistor R, and a third resistor R which is mutually connected in parallel is connected between the negative input end and an output end of the first operational amplifier OP1 f1 And a first capacitor C, a positive input terminal of the first operational amplifier OP1 passing through a fourth resistor R f1 The fourth resistor is connected with a second capacitor C in parallel;
the output end of the first operational amplifier OP1 is connected with the positive input end of the second operational amplifier OP2, the negative input end of the second operational amplifier OP2 is connected with the magnetic latching relay, the junction of the negative input end of the second operational amplifier OP2 and the magnetic latching relay is connected with the emitter of the triode VT1, the base of the triode VT1 is connected with the output end of the second operational amplifier, the collector of the triode VT1 is connected with one end of the heating element, and the other end of the heating element is grounded.
The voltage follower comprises a third operational amplifier OP3, the junction of the collector of the triode VT1 and the heating element is connected with the positive input end of the third operational amplifier OP3, and the negative input end of the third operational amplifier OP3 is connected with the output end.
The differential amplifier circuit comprises a fourth operational amplifier OP4, an output terminal of the third operational amplifier OP4 is connected with a positive input terminal of the fourth operational amplifier OP4 through a fifth resistor R, and a positive input terminal of the fourth operational amplifier OP4 is connected with a sixth resistor R f2 Grounded, the inverting input terminal of the fourth operational amplifier OP4 is grounded through a seventh resistor R, and the inverting input terminal of the fourth operational amplifier OP4 is grounded through an eighth resistor R f2 Is connected with the output end.
The magnetic latching relay comprises a gating switch and a first resistor R connected in parallel x1 And a second resistor R x2 The power source VCC is connected with a gating switch, and the gating switch is connected with a first resistor R x1 Or a second resistance R x2 Connected to a first resistor R x1 Is less than the second resistor R x2 The resistance value of (c).
OP 1 And the input-output relationship of the circuit composed of the peripheral resistor is shown as formula (1).
Figure GDA0003757065750000071
OP 2 The same-direction input end and the reverse input end of the capacitor are at the same potential and flow through R x The current on the resistor is:
Figure GDA0003757065750000072
get R f1 =R,I Rx =V DA /R x Triode VT 1 Is approximately equal to the collector current, i.e. the current flowing through the platinum wire: I.C. A Pt =V DA /R x In the visible, see I Pt Is independent of load resistance and is output by MCU AD And a standard resistance R x And (5) controlling.
When the circuit is used for heating and decontamination, the MCU controls the magnetic latching relay to be switched to R x1 Constant current I in the circuit Pt =V DA /R x1 Set up R x1 =10Ω,V DA The variation range of (A) is as follows: 0-3.3V, the current loaded on the platinum wire can reach 330mA at most, and the platinum wire can rapidly heat the probe.
When the probe is subjected to temperature measurement, the MCU controls the magnetic latching relay to be switched to R x2 Can set R x2 The constant current of mA grade can be loaded on the platinum wire, the voltage at two ends of the platinum wire is amplified by the differential amplification circuit and then is input to an analog-to-digital conversion port of the MCU, and the voltage V at the AD port AD As shown in formula (3).
Figure GDA0003757065750000081
The MCU can calculate the resistance value of the platinum wire at the moment according to the digitized voltage and the amplification factor and the constant current, and the temperature of the probe at the moment is obtained in a table look-up mode.
The langmuir probe is a preferred in-situ measuring tool for detecting the space plasma, and in the embodiment, plasma parameters such as electron density, temperature and plasma potential can be obtained by analyzing the obtained I-V characteristic curve. The probe is liable to adsorb moisture and gas in the atmosphere, thereby causing contamination of the probe. The I-V characteristic curve acquired by the probe shows obvious hysteresis phenomenon after pollution, so that the diagnosed plasma parameters are not credible. The embodiment provides a low pressure is in orbit to remove pollution and temperature measuring device, can heat the scrubbing to the probe system in space environment to real time monitoring probe temperature. Compared with the traditional method for removing pollution by adopting high-voltage bombardment, the method provided by the invention does not need high-voltage power supply, is high in safety and low in power consumption, does not influence the acquisition function of the probe, and can be used for carrying out plasma detection while removing pollution.
The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims (7)

1. An on-orbit decontamination langmuir probe on-orbit decontamination system, characterized in that:
the method comprises the following steps: a collecting electrode, an insulating layer, a guard electrode, a heating element and a housing;
the first end of the collecting electrode is exposed, the outer side of the middle part of the collecting electrode is coated with an insulating layer, the outer side of the insulating layer is coated with a protective electrode, the second end of the collecting electrode is positioned in the shell, and the second end of the collecting electrode is connected with the heating element;
the heating element is a platinum wire, and the platinum wire is wound at the second end of the collecting electrode;
the heating element is connected with the voltage-controlled constant current source circuit, and the voltage-controlled constant current source circuit is connected with the processor;
the signal output port of the processor is connected with a magnetic latching relay, the magnetic latching relay is connected with a current stabilizing circuit, one end of the current stabilizing circuit is connected with the heating element, the other end of the current stabilizing circuit is connected with a voltage follower, the voltage follower is connected with a differential amplifying circuit, the differential amplifying circuit is connected with an analog-to-digital conversion interface of the processor, and the digital-to-analog conversion interface of the processor is connected with the current stabilizing circuit;
when the circuit is used for heating and decontamination, the MCU controls the magnetic latching relay to be switched to R x1 Constant current I in the circuit Pt =V DA /R x1 Set up R x1 =10Ω,V DA The variation range of (A) is as follows: 0-3.3V, the current loaded on the platinum wire reaches 330mA at most, so that the platinum wire rapidly heats the probe;
when the probe is subjected to temperature measurement, the MCU controls the magnetic latching relay to be switched to R x2 Set up R x2 Loading mA-level constant current on the platinum wire, amplifying the voltage at two ends of the platinum wire by a differential amplifying circuit, inputting the amplified voltage to an analog-to-digital conversion port of the MCU, and inputting the voltage V at an AD port AD As shown in the formula:
Figure FDA0003757065740000011
and the MCU calculates the resistance value of the platinum wire at the moment according to the digitized voltage and the amplification factor and the constant current, and obtains the temperature of the probe at the moment by utilizing a table look-up mode.
2. The langmuir probe on-orbit decontamination system of claim 1, wherein:
the current stabilizing circuit comprises a first operational amplifier and a second operational amplifier, a digital-analog output port of the processor is connected with a reverse input end of the first operational amplifier through a first resistor, a power supply is connected with a positive input end of the first operational amplifier through a second resistor, a third resistor and a first capacitor which are mutually connected in parallel are connected between the negative input end and the output end of the first operational amplifier, the positive input end of the first operational amplifier is grounded through a fourth resistor, and the fourth resistor is connected with a second capacitor in parallel;
the output end of the first operational amplifier is connected with the positive input end of the second operational amplifier, the negative input end of the second operational amplifier is connected with the magnetic latching relay, the junction of the negative input end of the second operational amplifier and the magnetic latching relay is connected with the emitting electrode of the triode, the base electrode of the triode is connected with the output end of the second operational amplifier, the collector electrode of the triode is connected with one end of the heating element, and the other end of the heating element is grounded.
3. The langmuir probe on-orbit decontamination system of claim 1, wherein:
the voltage follower comprises a third operational amplifier, the junction of the collector of the triode and the heating element is connected with the positive input end of the third operational amplifier, and the reverse input end of the third operational amplifier is connected with the output end.
4. The langmuir probe on-orbit decontamination system of claim 1, wherein:
the differential amplification circuit comprises a fourth operational amplifier, the output end of the third operational amplifier is connected with the positive input end of the fourth operational amplifier through a fifth resistor, the positive input end of the fourth operational amplifier is grounded through a sixth resistor, the reverse input end of the fourth operational amplifier is grounded through a seventh resistor, and the reverse input end of the fourth operational amplifier is connected with the output end through an eighth resistor.
5. The langmuir probe on-orbit decontamination system of claim 2, wherein:
the magnetic latching relay comprises a gating switch, a first resistor and a second resistor which are connected in parallel, a power supply is connected with the gating switch, the gating switch is connected with the first resistor or the second resistor, and the resistance value of the first resistor is smaller than that of the second resistor.
6. An on-orbit decontamination method for Langmuir probes, which is characterized in that: an on-orbit decontamination system utilizing the langmuir probe of any one of claims 1 to 5, comprising the process of:
when the circuit is used for heating and decontamination, the processor controls the magnetic latching relay to be switched to the first resistor, current flows through the circuit at a constant rate, and current larger than a preset value is loaded on the heating element, so that heating and decontamination of the Langmuir probe are realized.
7. An on-orbit temperature measurement method of a Langmuir probe is characterized in that: an on-orbit decontamination system utilizing the langmuir probe of any one of claims 1 to 5, comprising the process of:
when the probe is used for measuring the temperature, the processor controls the magnetic latching relay to be switched to the second resistor, the milliampere-level current is loaded on the heating element, and the differential amplification circuit amplifies the voltages at the two ends of the heating element and inputs the amplified voltages to the analog-to-digital conversion port of the processor.
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