CN113193156A - Preparation method of packaging layer, display panel and preparation method of display panel - Google Patents
Preparation method of packaging layer, display panel and preparation method of display panel Download PDFInfo
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- CN113193156A CN113193156A CN202110320744.1A CN202110320744A CN113193156A CN 113193156 A CN113193156 A CN 113193156A CN 202110320744 A CN202110320744 A CN 202110320744A CN 113193156 A CN113193156 A CN 113193156A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 149
- 238000002360 preparation method Methods 0.000 title abstract description 16
- 238000005538 encapsulation Methods 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 36
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 18
- 238000000231 atomic layer deposition Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 20
- 239000001301 oxygen Substances 0.000 abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 20
- 230000009545 invasion Effects 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 310
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- XNMARPWJSQWVGC-UHFFFAOYSA-N 2-[3-[11-[[5-(dimethylamino)naphthalen-1-yl]sulfonylamino]undecanoylamino]propoxy]-4-[(5,5,8,8-tetramethyl-6,7-dihydronaphthalene-2-carbonyl)amino]benzoic acid Chemical compound CC1(C)CCC(C)(C)C=2C1=CC(C(=O)NC=1C=C(C(=CC=1)C(O)=O)OCCCNC(=O)CCCCCCCCCCNS(=O)(=O)C1=C3C=CC=C(C3=CC=C1)N(C)C)=CC=2 XNMARPWJSQWVGC-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- Inorganic Chemistry (AREA)
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a preparation method of an encapsulation layer, a display panel and a preparation method of the encapsulation layer, wherein the preparation method of the encapsulation layer comprises the steps of firstly forming a first inorganic encapsulation layer covering a substrate on the whole surface; forming a first organic packaging layer, wherein the first organic packaging layer covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer, and the first inorganic packaging layer on the periphery of the light-emitting layer is exposed; forming a second inorganic packaging layer on the side, away from the substrate, of the first organic packaging layer, wherein the second inorganic packaging layer covers the first organic packaging layer and exposes the first inorganic packaging layer on the periphery of the light emitting layer; and then removing the first inorganic packaging layer on the periphery of the luminous layer by taking the second inorganic packaging layer as an etching mask so as to expose the substrate for subsequent cutting. The preparation process of the packaging layer can be optimized, the probability of a water and oxygen invasion path extending from the cutting area to the area where the light-emitting layer is located in the subsequent substrate cutting process is reduced, and the packaging effect of the packaging layer is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a preparation method of an encapsulation layer, a display panel and a preparation method of the display panel.
Background
In an OLED (Organic Light Emitting Diode) display panel, in order to prevent the Organic Light Emitting material from being damaged by water and oxygen, an encapsulation layer is required to be prepared to encapsulate the Light Emitting layer. The most common packaging method in the prior art is TFE (Thin Film Encapsulation), and the structure is a laminated structure including an inorganic packaging layer and an organic packaging layer. The mask plate is needed in the process of depositing and forming the inorganic packaging layer so as to expose the cutting position on the substrate in the display panel, but pollutants such as particles and the like can be brought in by depositing the inorganic packaging layer by using the mask plate, and on the other hand, a film-forming shadow region exists below the mask plate, so that the controllability is poor, the film-forming shadow region can possibly form the inorganic packaging layer with poor quality, and a water and oxygen invasion path extending from the film-forming shadow region to the region where the light-emitting layer is located can be formed in the subsequent substrate cutting process, so that the probability of failure of the light-emitting material in the light-emitting layer due to invasion of water and oxygen is improved, and the packaging effect of the packaging layer is reduced.
Disclosure of Invention
The technical problem mainly solved by the application is to provide a preparation method of an encapsulation layer, a display panel and a preparation method of the display panel, which can improve the encapsulation effect of the encapsulation layer.
In order to solve the technical problem, the application adopts a technical scheme that: provided is a method for preparing an encapsulation layer, including:
forming a first inorganic packaging layer and a first organic packaging layer on one side of the substrate, which is provided with the light emitting layer; the first inorganic packaging layer covers the substrate, the first organic packaging layer covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer, and the first inorganic packaging layer on the periphery of the light-emitting layer is exposed;
forming a second inorganic packaging layer on the side, away from the substrate, of the first organic packaging layer; the second inorganic packaging layer covers the first organic packaging layer and exposes the first inorganic packaging layer on the periphery of the light-emitting layer;
and removing the first inorganic packaging layer on the periphery of the luminous layer by taking the second inorganic packaging layer as an etching mask so as to expose the substrate.
The step of removing the first inorganic packaging layer on the periphery of the light-emitting layer by etching with the second inorganic packaging layer as a mask plate to expose the substrate comprises the following steps:
and removing the first inorganic packaging layer which is not covered by the second inorganic packaging layer by using a dry etching technology by taking a preset gas as an etching atmosphere so as to expose the substrate.
When the preset gas is used as an etching atmosphere for dry etching, the ratio of the etching rates of the first inorganic packaging layer and the second inorganic packaging layer is 1.5:1-3: 1.
The first inorganic packaging layer comprises at least one of aluminum oxide and titanium oxide, the second inorganic packaging layer comprises at least one of silicon oxide, silicon nitride and silicon oxynitride, and the preset gas comprises boron trichloride.
Wherein the step of forming a first inorganic encapsulation layer and a first organic encapsulation layer on the side of the substrate provided with the light emitting layer includes:
depositing the first inorganic packaging layer on the whole surface of one side of the substrate, which is provided with the light-emitting layer, by adopting an atomic layer deposition technology;
and forming the first organic packaging layer in a preset area on one side, away from the light-emitting layer, of the first inorganic packaging layer by adopting an ink-jet printing technology, wherein the preset area covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer.
Wherein the first inorganic encapsulation layer and the first organic encapsulation layer are at least two groups which are alternately arranged.
Wherein, the step of depositing the first inorganic packaging layer on the whole surface of the side of the substrate provided with the luminescent layer by adopting the atomic layer deposition technology comprises the following steps:
depositing a plurality of first inorganic packaging sub-layers on the whole surface of one side of the substrate, which is provided with the light-emitting layer, in sequence by adopting an atomic layer deposition technology to form the first inorganic packaging layer; wherein the thickness of the first inorganic packaging sublayer is 0.5nm-5nm, and the number is 15-50.
Wherein the step of forming a second inorganic encapsulation layer on the side of the first organic encapsulation layer facing away from the substrate comprises:
a mask plate is arranged on one side, away from the substrate, of the first organic packaging layer, and the mask exposes the first organic packaging layer and covers the first inorganic packaging layer on the periphery of the light emitting layer;
depositing the second inorganic packaging layer on the whole surface of one side, away from the substrate, of the mask plate by adopting a chemical vapor deposition technology;
and removing the mask plate.
In order to solve the above technical problem, another technical solution adopted by the present application is: provided is a method for manufacturing a display panel, including:
according to the preparation method of the packaging layer in the technical scheme, the packaging layer is prepared on one side of the substrate, which is provided with the luminous layer;
and cutting the substrate from the substrate position exposed by the packaging layer to obtain the display panel.
In order to solve the above technical problem, another technical solution adopted by the present application is: provided is a display panel including:
a substrate;
a light emitting layer disposed on one side of the substrate;
and the packaging layer comprises a first inorganic packaging layer, a first organic packaging layer and a second inorganic packaging layer which are stacked, wherein the first inorganic packaging layer is formed by depositing an atomic layer deposition technology, the second inorganic packaging layer is formed by depositing a chemical vapor deposition technology, and the second inorganic packaging layer is further used as an etching mask of the first inorganic packaging layer.
The beneficial effect of this application is: different from the situation of the prior art, when the packaging layer is prepared on one side of the substrate provided with the light emitting layer, the first inorganic packaging layer covering the substrate on the whole surface is formed; forming a first organic packaging layer, wherein the first organic packaging layer covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer, and the first inorganic packaging layer on the periphery of the light-emitting layer is exposed; forming a second inorganic packaging layer on the side, away from the substrate, of the first organic packaging layer, wherein the second inorganic packaging layer covers the first organic packaging layer and exposes the first inorganic packaging layer on the periphery of the light emitting layer; and then removing the first inorganic packaging layer on the periphery of the luminous layer by taking the second inorganic packaging layer as an etching mask so as to expose the substrate for subsequent cutting. The first inorganic packaging layer is deposited on the whole surface, the second inorganic packaging layer is used as an etching mask, the first inorganic packaging layer on the periphery of the luminous layer is removed, the process of using a mask plate once can be reduced, and the preparation flow of the packaging layer is optimized. And the first inorganic packaging layer on the periphery of the luminous layer is removed by etching, so that no inorganic packaging layer is left in the cutting area, the probability of a water and oxygen invasion path extending from the cutting area to the area where the luminous layer is located in the subsequent substrate cutting process is reduced, the probability of failure of the luminous material in the luminous layer due to water and oxygen invasion can be reduced, and the packaging effect of the packaging layer is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts. Wherein:
FIG. 1 is a schematic flow chart illustrating one embodiment of a method for forming an encapsulation layer according to the present disclosure;
FIG. 2 is a schematic structural diagram illustrating an embodiment of step S11 in FIG. 1;
FIG. 3 is a flowchart illustrating an embodiment of step S11 in FIG. 1;
FIG. 4a is a schematic structural diagram illustrating an embodiment of step S12 in FIG. 1;
FIG. 4b is a partial schematic structural diagram of an embodiment of an encapsulation layer according to the present application;
FIG. 5 is a flowchart illustrating an embodiment of step S12 in FIG. 1;
FIG. 6a is a schematic structural diagram illustrating an embodiment of step S31 in FIG. 5;
FIG. 6b is a schematic structural diagram illustrating an embodiment of step S32 in FIG. 5;
FIG. 7 is a schematic structural diagram illustrating an embodiment of step S13 in FIG. 1;
FIG. 8 is a schematic flow chart illustrating an embodiment of a method for fabricating a display panel according to the present disclosure;
fig. 9 is a schematic structural diagram of an embodiment of a display panel according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments that can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application belong to the protection scope of the present application.
When an OLED display panel is manufactured, a light emitting layer is usually disposed on one side of a substrate, where the light emitting layer sequentially includes an anode, a plurality of light emitting pixel units, and a cathode, and may further include one or more layers of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer, which are well known in the art and are not described herein again. Then, an encapsulation layer is prepared on one side of the light emitting layer, the light emitting layer is encapsulated to prevent the organic light emitting material in the light emitting layer from being invaded by water and oxygen to be ineffective, and a dam is generally arranged around the edge of the light emitting layer on the substrate for better encapsulation.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a method for manufacturing an encapsulation layer according to an embodiment of the present disclosure, the method including the following steps.
Step S11, forming a first inorganic encapsulation layer and a first organic encapsulation layer on the side of the substrate provided with the light emitting layer; the first inorganic packaging layer covers the substrate, the first organic packaging layer covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer, and the first inorganic packaging layer on the periphery of the light-emitting layer is exposed.
Referring to fig. 2, fig. 2 is a schematic structural diagram corresponding to an embodiment of step S11 in fig. 1, in which a first inorganic encapsulation layer 13 and a first organic encapsulation layer 14 are first formed on a side of a substrate 11 on which a light-emitting layer 12 is disposed. The first inorganic encapsulating layer 13 covers the substrate 11, and the first organic encapsulating layer 14 covers the light-emitting layer 12 and the first inorganic encapsulating layer 13 on the light-emitting layer 12, and exposes the first inorganic encapsulating layer 13 on the periphery of the light-emitting layer 12. The edge of the light-emitting layer 12 on the substrate 11 is surrounded by a dam 15, and the light-emitting layer 12 is located in the region surrounded by the dam 15.
Specifically, referring to fig. 3 in conjunction with fig. 2, fig. 3 is a flowchart illustrating an embodiment of step S11 in fig. 1, wherein a first inorganic encapsulation layer and a first organic encapsulation layer are formed on a side of a substrate where a light emitting layer is disposed by the following steps.
Step S21, depositing a first inorganic encapsulation layer on the entire surface of the substrate on which the light emitting layer is disposed by using an atomic layer deposition technique.
Atomic Layer Deposition (ALD) is a method by which a substance can be deposited on a substrate surface Layer by Layer as a monoatomic film. In the present embodiment, an atomic layer deposition technique is used to deposit a first inorganic encapsulation layer 13 on the whole surface of the substrate 11 on which the light emitting layer 12 is disposed, specifically, a plurality of first inorganic encapsulation sub-layers (not shown) are sequentially deposited on the whole surface to form the first inorganic encapsulation layer 13. Wherein the first inorganic encapsulating sub-layer has a thickness of 0.5nm to 5nm, such as 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm, etc., and a number of 15 to 50, such as 15, 20, 25, 30, 35, 40, 45, 50, etc. That is to say, the first inorganic encapsulation layer 13 includes a plurality of first inorganic encapsulation sublayers, and the first inorganic encapsulation sublayers are monoatomic films thick, so that the structure of the first inorganic encapsulation layer 13 is compact, the invasion of water and oxygen to the light emitting layer 12 can be better blocked, and the encapsulation effect is improved.
Here, when the first inorganic encapsulating layer 13 is deposited by the ALD technique, the first inorganic encapsulating layer 13 grows along the outer surfaces of the substrate 11, the bank 15, and the light emitting layer 12, covering the entire surfaces of the substrate 11, the bank 15, and the light emitting layer 12.
Step S22, forming a first organic encapsulation layer in a predetermined area of the first inorganic encapsulation layer facing away from the light-emitting layer by using inkjet printing, where the predetermined area covers the light-emitting layer and the first inorganic encapsulation layer on the light-emitting layer.
The first organic encapsulation layer 14 includes an organic substance, has fluidity at a preset temperature, can be disposed in an area surrounded by the dam 15 by using an Ink Jet Printing (IJP) technology, and can further block the invasion of water and oxygen and improve the encapsulation effect after the leveling and curing. The finally formed first organic encapsulation layer 14 covers the light emitting layer 12 and the first inorganic encapsulation layer 13 on the light emitting layer 12, and the first inorganic encapsulation layer 13 exposing the periphery of the light emitting layer 12, i.e., the region outside the bank 15 is free of the first organic encapsulation layer 14. Preferably, the thickness of the first organic encapsulation layer 14 is 5 μm to 10 μm, such as 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, and the like.
According to the embodiment, the atomic layer deposition technology is utilized to form the first inorganic packaging layer, the ink jet printing technology is utilized to form the first organic packaging layer, the invasion of water and oxygen to the light emitting layer can be blocked, and the packaging effect is improved.
Step S12, forming a second inorganic packaging layer on the side of the first organic packaging layer, which is far away from the substrate; the second inorganic packaging layer covers the first organic packaging layer and exposes the first inorganic packaging layer on the periphery of the light-emitting layer.
Referring to fig. 4a in conjunction with fig. 2, fig. 4a is a schematic structural diagram corresponding to an embodiment of step S12 in fig. 1, after forming the first inorganic encapsulation layer 13 and the first organic encapsulation layer 14, the second inorganic encapsulation layer 16 is formed on a side of the first organic encapsulation layer 14 away from the substrate 11. The second inorganic encapsulating layer 16 covers the first organic encapsulating layer 14 and exposes the first inorganic encapsulating layer 13 at the periphery of the light-emitting layer 12.
In this embodiment, the second inorganic sealing layer 16 covers the upper surfaces of the first organic sealing layer 14 and the bank 15, and exposes only a small amount of the first inorganic sealing layer 13 on the periphery of the light-emitting layer 12. The position a where the first inorganic encapsulation layer 13 is exposed is the position where the substrate is subsequently cut.
In other embodiments, the first inorganic encapsulation layers 13 and the first organic encapsulation layers 14 are at least two groups alternately arranged. Referring to fig. 4b, fig. 4b is a partial structural schematic view of an embodiment of the encapsulation layer of the present application, in which after the above steps S21 and S22 are repeatedly performed, step S12 is further performed to obtain a plurality of sets of first inorganic encapsulation layers 13 and first organic encapsulation layers 14 alternately disposed, and second inorganic encapsulation layers 16. Further prolonging the water oxygen invasion path and improving the packaging effect.
In some embodiments, referring to fig. 5, fig. 5 is a flowchart illustrating an embodiment of step S12 in fig. 1, and a second inorganic encapsulation layer may be formed on a side of the first organic encapsulation layer facing away from the substrate by the following steps.
Step S31, a mask is disposed on a side of the first organic encapsulation layer away from the substrate, and the mask exposes the first organic encapsulation layer and covers the first inorganic encapsulation layer on the periphery of the light-emitting layer.
Referring to fig. 6a in conjunction with fig. 2, fig. 6a is a schematic structural view corresponding to an embodiment of step S31 in fig. 5, on the basis of the structure shown in fig. 2, a mask 17, such as a metal mesh, is first disposed on a side of the first organic encapsulation layer 14 away from the substrate 11 to expose the first organic encapsulation layer 14, and the first inorganic encapsulation layer 13 covering the periphery of the light-emitting layer 12, i.e., the first inorganic encapsulation layer 13 at the position a is covered, in this embodiment, the mask 17 also exposes the first inorganic encapsulation layer 13 on the upper surface of the dam 15. The area exposed by the mask 17 is subsequently deposited to form the second inorganic encapsulation layer 16, and the area covered by the mask 17 is not formed with the second inorganic encapsulation layer 16.
And step S32, depositing a second inorganic packaging layer on the whole surface of the side, away from the substrate, of the mask plate by adopting a chemical vapor deposition technology.
Referring to fig. 6b in conjunction with fig. 6a, fig. 6b is a schematic structural view corresponding to an embodiment of step S32 in fig. 5, after disposing the mask 17, a Chemical Vapor Deposition (CVD) technique is used to deposit the second inorganic encapsulation layer 16 on the entire surface of the mask 17 away from the substrate 11. That is, the second inorganic encapsulation layer 16 is positioned to cover the first organic encapsulation layer 14 and the bank 15 and the mask 17.
And step S33, removing the mask plate.
Referring to fig. 6b and fig. 4a in combination, after the mask 17 is removed, the second inorganic encapsulation layer 16 on the upper surface of the mask 17 is also removed, that is, the first inorganic encapsulation layer 13 at the position a is exposed, and the remaining second inorganic encapsulation layer 16 covers the first organic encapsulation layer 14 and the dam 15, as shown in fig. 4a, based on the structure shown in fig. 6 b.
In the embodiment, the second patterned inorganic encapsulation layer is formed by combining a mask and a CVD (chemical vapor deposition) technology, so that the first inorganic encapsulation layer on the periphery of the light-emitting layer is exposed, and the cutting position on the substrate is exposed after part of the first inorganic encapsulation layer is etched.
Step S13, removing the first inorganic encapsulation layer around the light emitting layer by using the second inorganic encapsulation layer as an etching mask to expose the substrate.
Referring to fig. 7 in conjunction with fig. 4a, fig. 7 is a schematic structural view corresponding to the embodiment of step S13 in fig. 1, after the second inorganic encapsulation layer 16 is formed, since the second inorganic encapsulation layer 16 covers the first organic encapsulation layer 14 and the dam 15 to expose the first inorganic encapsulation layer 13 at the position a, the first inorganic encapsulation layer 13 at the periphery of the light emitting layer 12 can be removed to expose the substrate 11 by using the second inorganic encapsulation layer 16 as an etching mask, so as to facilitate a subsequent cutting process. That is, the structure shown in FIG. 7 is obtained on the basis of the structure shown in FIG. 4 a.
The first inorganic encapsulation layer 13 includes at least one of aluminum oxide and titanium oxide, and the second inorganic encapsulation layer 16 includes at least one of silicon oxide, silicon nitride and silicon oxynitride.
The specific process of removing the first inorganic encapsulation layer 13 on the periphery of the light-emitting layer 12 by etching is as follows: and removing the first inorganic packaging layer 13 which is not covered by the second inorganic packaging layer 16 by using a dry etching technology by taking a preset gas as an etching atmosphere, namely removing the first inorganic packaging layer 13 at the position A to expose the substrate 11 at the position A.
Wherein the predetermined gas includes boron trichloride, and when the predetermined gas is used as an etching atmosphere to perform dry etching, the etching rate ratio of the first inorganic encapsulation layer 13 to the second inorganic encapsulation layer 16 is 1.5:1-3:1, such as 1.5:1, 1.7:1, 1.9:1, 2.1:1, 2.3:1, 2.5:1, 2.7:1, 3:1, and the like. That is, in the same etching time, the etching amount of the first inorganic encapsulation layer 13 is greater than the etching amount of the second inorganic encapsulation layer 16, so that the etching mask effect of the second inorganic encapsulation layer 16 is realized, and after the first inorganic encapsulation layer 13 at the position a is completely etched and removed, the second inorganic encapsulation layer 16 still remains as a part of the encapsulation layer, so that the water and oxygen invasion path is prolonged, the water and oxygen invasion is blocked, and the light-emitting layer 12 is protected.
When the encapsulation layer includes a plurality of sets of the first inorganic encapsulation layers 13 and the first organic encapsulation layers 14 alternately arranged, and the second inorganic encapsulation layers 16, the plurality of first inorganic encapsulation layers 13 at the position a may be etched and removed at the same time by using the second inorganic encapsulation layers 16 as a mask, exposing the substrate 11.
Therefore, the method and the device can ensure that no first inorganic packaging layer and no second inorganic packaging layer are left in the cutting area, reduce the probability of generating a water and oxygen invasion path extending from the cutting area to the area where the light-emitting layer is located in the subsequent substrate cutting process, reduce the probability of failure of the light-emitting material in the light-emitting layer due to water and oxygen invasion, and improve the packaging effect of the packaging layer.
In addition, when the patterned first inorganic encapsulation layer is formed, the second inorganic encapsulation layer is used as a mask, and the first inorganic encapsulation layer on the periphery of the light emitting layer is removed by etching, so that the process of using an external mask plate once is reduced, and the preparation flow of the encapsulation layer is optimized.
Based on the same inventive concept, the present application further provides a method for manufacturing a display panel, please refer to fig. 8, and fig. 8 is a schematic flow chart of an embodiment of the method for manufacturing a display panel of the present application, and the method includes the following steps.
Step S41 is to prepare an encapsulation layer on the side of the substrate where the light emitting layer is provided.
The preparation method of the encapsulation layer can be found in any of the above embodiments, and is not described herein again.
In step S42, the substrate is cut from the exposed substrate position of the encapsulation layer to obtain the display panel.
Referring to fig. 9 in conjunction with fig. 7, fig. 9 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure, in which after an encapsulation layer 20 is prepared on a side of a substrate 11 where a light emitting layer 12 is disposed, the substrate 11 is cut from a position of the substrate 11 exposed by the encapsulation layer 20 to obtain the display panel. That is, the substrate 11 is cut from the position a shown in fig. 7, and a display panel with a predetermined size is obtained.
In the process of preparing the display panel in the embodiment, the cutting area has no first inorganic packaging layer and no second inorganic packaging layer residue, so that the probability of generating a water and oxygen invasion path extending from the cutting area to the area where the light-emitting layer is located in the process of cutting the substrate is reduced, the probability of failure of the light-emitting material in the light-emitting layer due to water and oxygen invasion can be reduced, and the packaging effect of the packaging layer is improved.
Based on the same inventive concept, the present application further provides a display panel, please continue to refer to fig. 9, which includes a substrate 11, a light emitting layer 12 and an encapsulation layer 20, wherein the light emitting layer 12 is disposed on one side of the substrate 11; the encapsulation layer 20 comprises a first inorganic encapsulation layer 13, a first organic encapsulation layer 14 and a second inorganic encapsulation layer 16 which are arranged in a stacked manner, wherein the first inorganic encapsulation layer 13 is formed by ALD deposition of an atomic layer deposition technique, the second inorganic encapsulation layer 16 is formed by CVD deposition of a chemical vapor deposition technique, and the second inorganic encapsulation layer 16 is further used as an etching mask for the first inorganic encapsulation layer 13.
In this embodiment, the encapsulation layer 20 has an inorganic-organic-inorganic multilayer structure, and the invasion path of water and oxygen into the light-emitting layer 12 is prolonged, so that the probability of failure of the light-emitting material in the light-emitting layer 12 due to water and oxygen invasion is reduced, and the encapsulation effect of the encapsulation layer 20 is improved.
In another embodiment, referring to fig. 4b, the encapsulation layer 20 of the display panel may further include a plurality of first inorganic encapsulation layers 13 and first organic encapsulation layers 14 alternately disposed, and a plurality of second inorganic encapsulation layers 16 alternately disposed, so as to further extend the water and oxygen ingress path and improve the encapsulation effect.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. A method for preparing an encapsulation layer, comprising:
forming a first inorganic packaging layer and a first organic packaging layer on one side of the substrate, which is provided with the light emitting layer; the first inorganic packaging layer covers the substrate, the first organic packaging layer covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer, and the first inorganic packaging layer on the periphery of the light-emitting layer is exposed;
forming a second inorganic packaging layer on the side, away from the substrate, of the first organic packaging layer; the second inorganic packaging layer covers the first organic packaging layer and exposes the first inorganic packaging layer on the periphery of the light-emitting layer;
and removing the first inorganic packaging layer on the periphery of the luminous layer by taking the second inorganic packaging layer as an etching mask so as to expose the substrate.
2. The method according to claim 1, wherein the step of removing the first inorganic encapsulation layer around the light-emitting layer by etching using the second inorganic encapsulation layer as a mask to expose the substrate comprises:
and removing the first inorganic packaging layer which is not covered by the second inorganic packaging layer by using a dry etching technology by taking a preset gas as an etching atmosphere so as to expose the substrate.
3. The method according to claim 2, wherein when the predetermined gas is used as an etching atmosphere for dry etching, a ratio of etching rates of the first inorganic encapsulation layer and the second inorganic encapsulation layer is 1.5:1 to 3: 1.
4. The method according to claim 3, wherein the first inorganic encapsulation layer comprises at least one of aluminum oxide and titanium oxide, the second inorganic encapsulation layer comprises at least one of silicon oxide, silicon nitride and silicon oxynitride, and the predetermined gas comprises boron trichloride.
5. The method according to claim 1, wherein the step of forming the first inorganic encapsulating layer and the first organic encapsulating layer on the side of the substrate provided with the light-emitting layer comprises:
depositing the first inorganic packaging layer on the whole surface of one side of the substrate, which is provided with the light-emitting layer, by adopting an atomic layer deposition technology;
and forming the first organic packaging layer in a preset area on one side, away from the light-emitting layer, of the first inorganic packaging layer by adopting an ink-jet printing technology, wherein the preset area covers the light-emitting layer and the first inorganic packaging layer on the light-emitting layer.
6. The method of claim 5, wherein the first inorganic encapsulation layer and the first organic encapsulation layer are at least two groups that are alternately arranged.
7. The method according to claim 5, wherein the step of depositing the first inorganic encapsulation layer on the entire surface of the substrate on the side provided with the light-emitting layer by using an atomic layer deposition technique comprises:
depositing a plurality of first inorganic packaging sub-layers on the whole surface of one side of the substrate, which is provided with the light-emitting layer, in sequence by adopting an atomic layer deposition technology to form the first inorganic packaging layer; wherein the thickness of the first inorganic packaging sublayer is 0.5nm-5nm, and the number is 15-50.
8. The method according to claim 1, wherein the step of forming a second inorganic encapsulation layer on a side of the first organic encapsulation layer facing away from the substrate comprises:
a mask plate is arranged on one side, away from the substrate, of the first organic packaging layer, and the mask exposes the first organic packaging layer and covers the first inorganic packaging layer on the periphery of the light emitting layer;
depositing the second inorganic packaging layer on the whole surface of one side, away from the substrate, of the mask plate by adopting a chemical vapor deposition technology;
and removing the mask plate.
9. A method for manufacturing a display panel, comprising:
the method of producing an encapsulation layer according to any one of claims 1 to 8, producing an encapsulation layer on a side of the substrate on which the light emitting layer is provided;
and cutting the substrate from the substrate position exposed by the packaging layer to obtain the display panel.
10. A display panel, comprising:
a substrate;
a light emitting layer disposed on one side of the substrate;
and the packaging layer comprises a first inorganic packaging layer, a first organic packaging layer and a second inorganic packaging layer which are stacked, wherein the first inorganic packaging layer is formed by depositing an atomic layer deposition technology, the second inorganic packaging layer is formed by depositing a chemical vapor deposition technology, and the second inorganic packaging layer is further used as an etching mask of the first inorganic packaging layer.
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