CN113193120A - Preparation method and application of potassium bromide-doped perovskite film - Google Patents
Preparation method and application of potassium bromide-doped perovskite film Download PDFInfo
- Publication number
- CN113193120A CN113193120A CN202110367174.1A CN202110367174A CN113193120A CN 113193120 A CN113193120 A CN 113193120A CN 202110367174 A CN202110367174 A CN 202110367174A CN 113193120 A CN113193120 A CN 113193120A
- Authority
- CN
- China
- Prior art keywords
- potassium bromide
- thin film
- perovskite
- solution
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a preparation method and application of a potassium bromide doped organic-inorganic perovskite thin film, and belongs to the technical field of perovskite solar cells. According to the invention, the perovskite thin film is prepared by adopting a two-step spin coating method, and the doping of potassium bromide is carried out in the spin coating precursor liquid, so that the quality of the thin film is improved, and the photoelectric conversion efficiency of the perovskite device is further improved. The photoelectric conversion efficiency of the perovskite solar cell prepared by the method can reach 21.2%.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cells, and particularly relates to a preparation method and application of a potassium bromide doped organic-inorganic perovskite thin film.
Background
At present, with the aggravation of environmental problems and the rapid consumption of traditional fossil energy, the field of new energy has received extensive attention, such as wind power generation, hydroelectric power generation and photovoltaic power generation, and has gradually become a new star in the power industry. Among them, photovoltaic power generation has been developed rapidly, and photovoltaic power generation products represented by crystalline silicon solar cells have already occupied a certain share in the market, but the preparation process is complex and the cost is high, so that the current price cost cannot be compared with the mainstream thermal power generation in the current market. The perovskite material developed along with the method is low in cost, and has the characteristics of adjustable energy band gap, high light absorption coefficient, long carrier service life and the like. Through the development of more than ten years, the photoelectric conversion efficiency of the perovskite solar cell device prepared based on the perovskite material is improved from 3.8% to 25.5%.
At present, with the development of the field of perovskite solar cells, researchers mainly focus on the research of preparing high-quality thin film perovskite devices. Years of researches of researchers find that the additive has obvious influence on the perovskite photovoltaic performance. The research shows that the types of the commonly used effective additives at present mainly comprise salts, small molecular substances, polymers and some nano substances. Liu, S et al (Liu, S., et al, A Review on Additives for halogen Perovskite Solar cells. advanced Energy Materials,2020.10(13): p.28) have studied: the doping of salt substances has a significant influence on the photovoltaic efficiency of the perovskite device, and the common salt substances are mainly alkali metal salt substances, such as sodium salt, rubidium salt, lithium salt and potassium salt. The most studied alkali metal potassium salt is mainly the doping of alkali metal potassium iodide (KI), and the research shows that the alkali metal potassium salt has obvious effects on the appearance, crystallinity and defects of the perovskite thin film, and finally the photovoltaic efficiency of the perovskite device is improved. However, doping with KI still results in limited improvement in photoelectric conversion efficiency of the device.
Therefore, how to provide a new dopant to achieve high-quality production of perovskite thin films and increase the photoelectric efficiency of devices becomes important for research.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a preparation method and application of a potassium bromide doped perovskite thin film. According to the invention, the perovskite thin film is prepared by adopting a spin-coating method, and the doping of potassium bromide is carried out in the spin-coating precursor liquid, so that the quality of the thin film is improved, and the photoelectric conversion efficiency of the perovskite device is further improved.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a preparation method of a potassium bromide doped perovskite thin film comprises the following steps:
dissolving formamidine iodine (FAI) and methylamine bromide (MABr) in a solvent B, mixing and stirring uniformly to prepare a solution B, wherein the molar weight ratio of FAI to MABr is (5.2-5.87): 1, and the concentration of methylamine bromide in the solution B is 5-10 mg/mL;
step 3, filtering the solution A obtained in the step 1, then performing spin coating on the solution A to the surface of the substrate, then continuing to filter the solution B obtained in the step 2, and then performing spin coating on the solution B to the surface of the substrate to prepare a uniform film;
and 4, annealing the uniform film prepared in the step 3 in a nitrogen atmosphere at the annealing temperature of 130-150 ℃ for 15-20 min to obtain the required potassium bromide doped perovskite film.
Further, the solvent A is a mixed solution of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and the volume ratio of the DMF to the DMSO is 4: 1.
Further, in the step 1, the heating temperature is 60-70 ℃, and the heating time is 5-12 hours.
Further, the solvent B is isopropanol or ethanol.
Further, the process parameters of the spin coating solution a in the step 3 are as follows: rotating at 3000-4000 r.p.m, and spin-coating for 30-35 s; the technological parameters of the spin coating solution B are as follows: the rotating speed is 4000-5000 r.p.m, and the spin coating time is 30-35 s.
Further, the thickness of the potassium bromide doped perovskite thin film is 400-700 nm.
The invention also provides application of the perovskite thin film in preparation of perovskite solar cells.
The preparation method of the perovskite solar cell comprises the following steps: cleaning the transparent conductive film substrate, and depositing a tin dioxide electron transport layer on the surface of the substrate; then preparing a potassium bromide doped perovskite thin film layer on the surface of the electron transport layer by adopting a spin-coating method; preparing a 2,2',7,7' -tetrabromo-9, 9' -spirobi and tri (4-iodobenzene) amine hole transport layer on the surface of the perovskite thin film layer by spin coating; and finally, preparing an Au metal electrode layer on the surface of the hole transport layer by evaporation.
Further, the thickness of the electron transmission layer is 40-60 nm; the thickness of the hole transport layer is 140-160 nm.
The mechanism of the invention is as follows: the doping of the potassium bromide has obvious effects on the enhancement of the crystallinity of the perovskite thin film and the reduction of non-radiative recombination of the perovskite thin film, the perovskite thin film with excellent performance is obtained by doping the potassium bromide, and the photoelectric conversion efficiency of the perovskite device is finally improved. Compared with the doping of potassium iodide, the doping of potassium bromide has an obvious effect on regulating and controlling the perovskite band gap by the halogen bromide ions introduced together, so that the open voltage of the perovskite device is obviously improved, and the photoelectric conversion efficiency of the perovskite device is further improved finally; and the conventional potassium iodide is doped with iodide ions, so that the proportion of iodine and bromine chemical elements in the preparation of the film at the earlier stage is changed, the content of iodide ions in perovskite components is increased, the absorption band edge of the perovskite is blue-shifted, the light absorption waveband of the perovskite film is reduced, and the photoelectric conversion efficiency of the perovskite photovoltaic device is finally influenced.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
according to the invention, the potassium bromide additive is added in the two-step spin-coating method, so that the high-quality perovskite thin film is synthesized, the photoelectric conversion efficiency of the perovskite solar cell prepared based on the method can reach 21.2%, and is 17.55% compared with the doping of potassium iodide, and meanwhile, the perovskite solar cell is remarkably improved compared with the perovskite devices doped with potassium chloride and without doping. In addition, the preparation process is simple and easy to realize.
Drawings
FIG. 1 is a schematic diagram of a process for preparing a perovskite thin film according to the present invention.
FIG. 2 is an X-ray diffraction pattern of perovskite thin films obtained in example 1 of the present invention, comparative example 1 and comparative example 2.
FIG. 3 is a graph showing photoluminescence-fluorescence lifetime decay of perovskite thin films prepared in example 1, comparative example 1 and comparative example 2 of the present invention.
Fig. 4 is a statistical graph of photovoltaic parameters of perovskite solar cells prepared in example 2, comparative example 3 and comparative example 4 of the present invention.
Fig. 5 is a graph of the optimum photoelectric conversion efficiency of the perovskite solar cells manufactured in example 2, comparative example 3 and comparative example 4 of the present invention by reverse scanning.
FIG. 6 is an X-ray diffraction pattern of varying molar concentrations of potassium bromide doping according to example 3 of the present invention.
Fig. 7 is a statistical graph of photovoltaic parameters of the perovskite solar cell prepared in example 4 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
FIG. 1 is a schematic diagram of a process for preparing a perovskite thin film according to the present invention. As can be seen in the figure, the preparation method of the potassium bromide doped perovskite thin film mainly adopts a two-step spin coating method, and firstly adopts lead iodide (PbI)2) Spin-coating the base with a mixed solution of potassium bromide (KBr)And spin-coating a mixed solution of formamidine iodine (FAI) and methylamine bromide (MABr) on the bottom surface, and annealing the substrate after the spin-coating is finished to obtain the perovskite thin film on the surface of the substrate.
Example 1
A preparation method of a potassium bromide doped perovskite thin film comprises the following steps:
and 3, filtering 50 mu L of the solution A obtained in the step 1 in a nitrogen atmosphere by using a filter head with the diameter of 0.22 mu m, and then spin-coating the solution A to the surface of the ITO conductive glass substrate, wherein the specific parameters of the spin-coating are as follows: the rotating speed is 3000rpm, and the spin coating time is 30 s; and then continuing to perform filtration treatment on 120 mu L of the solution B obtained in the step 2 by using a filter head with the diameter of 0.22 mu m, and performing spin coating on the surface of the substrate, wherein the specific parameters of the spin coating are as follows: the rotating speed is 4000rpm, the spin coating time is 30s, and a uniform film is prepared;
and 4, annealing the uniform film prepared in the step 3 in a nitrogen atmosphere at the temperature of 150 ℃, wherein the annealing time is 20min, and the required potassium bromide doped perovskite film can be obtained.
XRD characterization analysis is performed on the perovskite thin film prepared in the embodiment, and the result is shown in FIG. 2, and the photoluminescence-fluorescence lifetime decay graph is shown in FIG. 3.
Example 2
A preparation method of a perovskite solar cell comprises the following steps:
step 3, preparing a perovskite light absorption layer:
3.1. dissolving 600mg of lead iodide and 8.33mg of potassium bromide in 1mL of mixed solution of DMF and DMSO, uniformly mixing, and stirring for 5 hours on a hot bench at 60 ℃ to obtain solution A, wherein the volume ratio of DMF to DMSO is 4: 1;
3.2. dissolving 80mg of formamidine iodine (FAI) and 10mg of methylamine bromide (MABr) in 1mL of isopropanol, stirring for 30min at normal temperature, and uniformly mixing to obtain a solution B;
3.3. 50 μ L of the solution A obtained in step 1 was spin-coated to SnO under a nitrogen atmosphere2The specific spin coating parameters on the surface of the electron transport layer are as follows: the rotating speed is 3000r.p.m, and the spin coating time is 30 s; and then continuing to spin-coat 120 μ L of the solution B obtained in the step 2 on the surface of the substrate, wherein the specific spin-coating parameters are as follows: the rotating speed is 4000r.p.m, the spin coating time is 30s, and a uniform film is prepared;
3.4. annealing the uniform film prepared in the step (3) in a nitrogen atmosphere at the temperature of 150 ℃ for 20min to obtain a potassium bromide doped perovskite film on the electron transport layer;
step 5, preparing a metal electrode layer: metal Au with the thickness of 100nm is evaporated on the hole transport layer prepared in the step 4 to be used as a metal electrode layer, and the air pressure in an evaporation cabin is controlled to be 10 in the evaporation process-4Pa is below, the perovskite solar cell can be prepared.
The solar cell prepared in this embodiment is subjected to photovoltaic parameter analysis and test: the perovskite solar cell prepared by the implementation has an effective active area of 0.09 square centimeter, and is tested under the conditions of standard simulated sunlight AM1.5, 30% air humidity and 25 ℃ with photovoltaic parameter statistical data as shown in figure 4 and a current density-voltage curve as shown in figure 5.
Example 3
A potassium bromide-doped perovskite thin film was prepared by following the procedure of example 1, and only the amounts of potassium bromide doped in step 1 were adjusted to 13.09mg and 17.85mg, while the other steps were unchanged.
XRD (X-ray diffraction) characterization and analysis are carried out on the perovskite thin film prepared in the embodiment, and the result is shown in FIG. 6.
Example 4
The perovskite solar cell was prepared according to the procedure of example 2, with only the annealing times in step 3.4 being adjusted to 10min and 15min, the other steps being unchanged.
The solar cell prepared in this embodiment is subjected to photovoltaic parameter analysis and test: the perovskite solar cell prepared by the implementation has an effective active area of 0.09 square centimeter, and is tested under the conditions of standard simulated sunlight AM1.5, 30% air humidity and 25 ℃ with photovoltaic parameter statistical data shown in figure 7.
Comparative example 1
The potassium chloride doped perovskite thin film is prepared according to the steps of example 1, and the specific steps are as follows:
step 3, spin-coating the solution A obtained in the step 1 to the surface of the substrate, and then continuously spin-coating the solution B obtained in the step 2 to the surface of the substrate to prepare a uniform film;
and 4, annealing the uniform film prepared in the step 3 in a nitrogen atmosphere at the temperature of 150 ℃, wherein the annealing time is 20min, and the required potassium chloride-doped perovskite film can be obtained.
XRD characterization analysis is carried out on the perovskite thin film prepared by the comparative example, the result is shown in figure 2, and the photoluminescence-fluorescence lifetime decay graph is shown in figure 3.
Comparative example 2
Undoped perovskite thin films were prepared according to the procedure of example 1, with no potassium bromide added only in the preparation of solution a in step 1, and the other steps unchanged.
XRD characterization analysis is carried out on the perovskite thin film prepared by the comparative example, the result is shown in figure 2, and the photoluminescence-fluorescence lifetime decay graph is shown in figure 3.
Comparative example 3
A potassium chloride-doped perovskite solar cell was fabricated according to the procedure of example 2, and only the process of fabricating the perovskite thin film of step 3 was adjusted to the fabrication process of comparative example 1, with the other steps unchanged.
The photovoltaic parameter analysis test result of the solar cell prepared by the comparative example is shown in fig. 4, and the current density-voltage curve is shown in fig. 5.
Comparative example 4
A potassium chloride-doped perovskite solar cell was fabricated according to the procedure of example 2, and only the process of fabricating the perovskite thin film of step 3 was adjusted to the fabrication process of comparative example 2, with the other steps unchanged.
The photovoltaic parameter analysis test result of the solar cell prepared by the comparative example is shown in fig. 4, and the current density-voltage curve is shown in fig. 5.
FIG. 2 is an X-ray diffraction pattern of perovskite thin films obtained in example 1 of the present invention, comparative example 1 and comparative example 2. As can be seen from the figure, compared with the undoped XRD pattern, the intensity of the diffraction peak of the perovskite thin film is increased and the diffraction peak of lead iodide is weakened after the doping of potassium bromide, which shows that the doping of potassium bromide is beneficial to the formation of the perovskite thin film, and the diffraction change of the perovskite thin film is not large after the doping of potassium chloride, and the diffraction peak of lead iodide is strengthened, which shows that the doping of potassium chloride has no promotion effect on the formation of perovskite. Photoluminescence-fluorescence lifetime decay test was performed on the prepared perovskite thin film, and the result is shown in fig. 3. FIG. 3 shows that the doping of potassium bromide is beneficial to reducing the non-radiative recombination of the perovskite thin film and increasing the quality of the thin film, while the doping effect of potassium chloride is not obvious. The doping of potassium bromide is proved to have obvious effect on perovskite crystallinity and obvious promotion effect on inhibiting non-radiative recombination, while the doping of potassium chloride has little influence on related performance, namely, even halogen elements of the same main group can bring different effects completely, thus proving that the selection of the doping substance potassium bromide is unique.
Fig. 4 is a statistical graph of photovoltaic parameters of perovskite solar cells prepared in example 2, comparative example 3 and comparative example 4, wherein (a) is voltage, (b) is current, (c) is fill factor, (d) is photoelectric conversion efficiency, in the graph, KBr represents the preparation result of example 2 doping KBr, abscissa c represents the preparation result of comparative example 4, and KCl represents the preparation result of comparative example 3 doping KCl. As shown in fig. 4, it can be seen that the voltage, current and fill factor of the potassium bromide doped perovskite device are much higher than those of the undoped perovskite device; after the potassium chloride is doped, the photovoltaic performance of the perovskite device is not greatly influenced, which shows that the doping of all alkali metal potassium halogens can improve the photovoltaic performance of the perovskite device, while the doping of the potassium bromide can obviously improve the perovskite device, mainly because the bromine ions increase the band gap of the perovskite thin film, the voltage of the perovskite device is further increased, and the photoelectric conversion efficiency of the perovskite device is improved. Fig. 5 is a current density-voltage graph of the perovskite solar cells prepared in example 2, comparative example 3 and comparative example 4. The photovoltaic performance parameters of the doped potassium bromide perovskite obtained according to the current density-voltage curve are as follows: short circuit currentThe density was 23.59mA/cm2The open-circuit voltage is 1.13V, the filling factor is 0.80, the conversion efficiency is 21.20%, and the photovoltaic performance parameters of the potassium chloride perovskite are as follows: the short-circuit current density is 21.51mA/cm2Open circuit voltage 1.10V, fill factor 0.74, conversion efficiency 17.59%, photovoltaic performance parameters of undoped perovskite: the short-circuit current density is 21.85mA/cm2Open circuit voltage 1.10V, fill factor 0.75, conversion efficiency 17.92%. In conclusion, the voltage, the current and the filling factor of the potassium bromide doped perovskite device are obviously improved, and finally the photoelectric conversion efficiency of the perovskite device is effectively improved.
FIG. 6 is an X-ray diffraction pattern of varying molar concentrations of potassium bromide doping according to example 3 of the present invention. As shown in fig. 6, it is understood that as the molar concentration of the potassium bromide doping is increased, the peak intensity of the perovskite diffraction peak (110) phase is increased, and the diffraction peak intensity of lead iodide is decreased, indicating that the doping of potassium bromide has a significant benefit on the crystallinity of the perovskite thin film. And the perovskite thin film quality performance is optimal when the doping concentration of the potassium bromide is 0.07M and 0.11M.
Fig. 7 is a statistical plot of the photovoltaic parameters of the perovskite solar cell prepared in example 4, where (a) is voltage, (b) is current, (c) is fill factor, and (d) is photoelectric conversion efficiency, and the abscissa represents different annealing times of the perovskite thin film. As shown in fig. 7, as the annealing time of the perovskite thin film increases, the voltage, current, and fill factor of the perovskite photovoltaic device are slightly increased, indicating that the photoelectric conversion efficiency of the perovskite photovoltaic device is promoted.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (9)
1. A preparation method of a potassium bromide doped perovskite film is characterized by comprising the following steps:
step 1, dissolving lead iodide and potassium bromide in a solvent A, uniformly mixing, heating for dissolving, and preparing to obtain a solution A, wherein the molar ratio of the lead iodide to the potassium bromide is (18.57-18.82): 1, and the concentration of the potassium bromide in the solution A is 8.33-13.09 mg/mL;
dissolving formamidine iodine and methylamine bromide in a solvent B, and uniformly mixing and stirring to prepare a solution B, wherein the molar ratio of the formamidine iodine to the methylamine bromide is (5.2-5.87): 1, and the concentration of the methylamine bromide in the solution B is 5-10 mg/mL;
step 3, spin-coating the solution A obtained in the step 1 to the surface of the substrate, and then continuously spin-coating the solution B obtained in the step 2 to the surface of the substrate to prepare a uniform film;
and 4, annealing the uniform film prepared in the step 3 in a nitrogen atmosphere at the annealing temperature of 130-150 ℃ for 15-20 min to obtain the required potassium bromide doped perovskite film.
2. The method for preparing a potassium bromide-doped perovskite thin film as claimed in claim 1, wherein the solvent A is a mixed solution of N, N-dimethylformamide and dimethyl sulfoxide, and the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide is 4: 1.
3. The method for preparing a potassium bromide-doped perovskite thin film as claimed in claim 1, wherein the heating temperature in the step 1 is 60-70 ℃ and the heating time is 5-12 h.
4. The method of preparing a potassium bromide-doped perovskite thin film as claimed in claim 1, wherein the solvent B is isopropanol or ethanol.
5. The method for preparing a potassium bromide-doped perovskite thin film as claimed in claim 1, wherein the process parameters of the spin coating solution A in the step 3 are as follows: rotating at 3000-4000 r.p.m, and spin-coating for 30-35 s; the technological parameters of the spin coating solution B are as follows: the rotating speed is 4000-5000 r.p.m, and the spin coating time is 30-35 s.
6. The method according to claim 1, wherein the thickness of the potassium bromide-doped perovskite thin film is 400 to 700 nm.
7. The use of the perovskite thin film obtained by the preparation method according to any one of claims 1 to 6 in the preparation of perovskite solar cells.
8. A preparation method of a perovskite solar cell is characterized by comprising the following steps: cleaning the transparent conductive film substrate, and depositing a tin dioxide electron transport layer on the surface of the substrate; then preparing a potassium bromide doped perovskite thin film layer on the surface of the electron transport layer by adopting the preparation method as claimed in any one of claims 1 to 6; preparing a 2,2',7,7' -tetrabromo-9, 9' -spirobi and tri (4-iodobenzene) amine hole transport layer on the surface of the potassium bromide doped perovskite thin film layer by spin coating; and finally, preparing an Au metal electrode layer on the surface of the hole transport layer by evaporation.
9. The method for producing a perovskite solar cell as claimed in claim 8, wherein the thickness of the electron transport layer is 40 to 60 nm; the thickness of the hole transport layer is 140-160 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110367174.1A CN113193120B (en) | 2021-04-06 | 2021-04-06 | Preparation method and application of potassium bromide-doped perovskite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110367174.1A CN113193120B (en) | 2021-04-06 | 2021-04-06 | Preparation method and application of potassium bromide-doped perovskite film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113193120A true CN113193120A (en) | 2021-07-30 |
| CN113193120B CN113193120B (en) | 2022-03-15 |
Family
ID=76974879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110367174.1A Active CN113193120B (en) | 2021-04-06 | 2021-04-06 | Preparation method and application of potassium bromide-doped perovskite film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113193120B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114015984A (en) * | 2021-10-29 | 2022-02-08 | 华中科技大学 | Preparation method and application of organic-inorganic hybrid perovskite material |
| CN115132864A (en) * | 2022-06-15 | 2022-09-30 | 上海大学 | Metal yttrium doped CsSnI 3 Inorganic perovskite thin film and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275492A (en) * | 2017-05-19 | 2017-10-20 | 北京科技大学 | Introduce the method that nonsolute bromide compound additive prepares mixed halogen perovskite |
| CN108269940A (en) * | 2018-01-22 | 2018-07-10 | 苏州大学 | Perovskite light emitting diode of alkali halide doping and preparation method thereof |
| US20180301646A1 (en) * | 2015-10-11 | 2018-10-18 | Northwestern University | Phase-pure, two-dimensional, multilayered perovskites for optoelectronic applications |
| CN108963032A (en) * | 2018-06-26 | 2018-12-07 | 暨南大学 | The two-sided inorganic perovskite solar battery and its preparation method and application adulterated based on alkali metal ion and alkaline-earth metal ions |
| CN109545989A (en) * | 2018-12-14 | 2019-03-29 | 钟祥博谦信息科技有限公司 | Perovskite preparation method of solar battery |
| CN109786486A (en) * | 2018-12-27 | 2019-05-21 | 暨南大学 | A kind of double-perovskite mono crystalline photovoltaic detector and preparation method thereof |
| CN111403616A (en) * | 2020-03-30 | 2020-07-10 | 浙江大学 | Bromine inorganic salt perovskite film and preparation method and application thereof |
| CN111599923A (en) * | 2020-05-15 | 2020-08-28 | 成都新柯力化工科技有限公司 | Method for improving efficiency of perovskite solar cell |
| CN111697142A (en) * | 2020-06-04 | 2020-09-22 | 南京大学 | Preparation method of organic-inorganic hybrid perovskite film |
-
2021
- 2021-04-06 CN CN202110367174.1A patent/CN113193120B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180301646A1 (en) * | 2015-10-11 | 2018-10-18 | Northwestern University | Phase-pure, two-dimensional, multilayered perovskites for optoelectronic applications |
| CN107275492A (en) * | 2017-05-19 | 2017-10-20 | 北京科技大学 | Introduce the method that nonsolute bromide compound additive prepares mixed halogen perovskite |
| CN108269940A (en) * | 2018-01-22 | 2018-07-10 | 苏州大学 | Perovskite light emitting diode of alkali halide doping and preparation method thereof |
| CN108963032A (en) * | 2018-06-26 | 2018-12-07 | 暨南大学 | The two-sided inorganic perovskite solar battery and its preparation method and application adulterated based on alkali metal ion and alkaline-earth metal ions |
| CN109545989A (en) * | 2018-12-14 | 2019-03-29 | 钟祥博谦信息科技有限公司 | Perovskite preparation method of solar battery |
| CN109786486A (en) * | 2018-12-27 | 2019-05-21 | 暨南大学 | A kind of double-perovskite mono crystalline photovoltaic detector and preparation method thereof |
| CN111403616A (en) * | 2020-03-30 | 2020-07-10 | 浙江大学 | Bromine inorganic salt perovskite film and preparation method and application thereof |
| CN111599923A (en) * | 2020-05-15 | 2020-08-28 | 成都新柯力化工科技有限公司 | Method for improving efficiency of perovskite solar cell |
| CN111697142A (en) * | 2020-06-04 | 2020-09-22 | 南京大学 | Preparation method of organic-inorganic hybrid perovskite film |
Non-Patent Citations (4)
| Title |
|---|
| ALANAZI,TI;GAME,OS;SMITH,JA,ET AL: "Potassium iodide reduces the stability of triple-cation perovskite solar cells", 《RSC ADVANCES》 * |
| ALEXEY A.SHAMIN;EKATERINA A.PECHERSKAYA;KIRILL O.NIKOLAEV,ET AL: "Quality Control of Technological Processes of Manufacturing Functional Solar Cells Layers Based on Hybrid Organic-Inorganic Perovskites", 《2019 INTERNATIONAL SEMINAR ON ELECTRON DEVICES DESIGN AND PRODUCTION (SED)》 * |
| 吴海妍，唐建新，李艳青: "基于缺陷态钝化的高效稳定蓝光钙钛矿发光二极管", 《物理学报》 * |
| 范颖平: "混合有机阳离子钙钛矿薄膜相纯度和结晶性调控研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114015984A (en) * | 2021-10-29 | 2022-02-08 | 华中科技大学 | Preparation method and application of organic-inorganic hybrid perovskite material |
| CN115132864A (en) * | 2022-06-15 | 2022-09-30 | 上海大学 | Metal yttrium doped CsSnI 3 Inorganic perovskite thin film and preparation method thereof |
| CN115132864B (en) * | 2022-06-15 | 2024-02-20 | 上海大学 | CsSnI doped with yttrium metal 3 Inorganic perovskite thin film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113193120B (en) | 2022-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108878554B (en) | Lanthanide rare earth ion doping-based CsPbBr3All-inorganic perovskite solar cell and preparation method and application thereof | |
| CN108389967B (en) | Light absorption layer material of solar cell, wide-band-gap perovskite solar cell and preparation method thereof | |
| CN110246967B (en) | Method for preparing flexible perovskite solar cell at low temperature | |
| CN113193120B (en) | Preparation method and application of potassium bromide-doped perovskite film | |
| CN111944161B (en) | Eu-MOFs interface modification layer in perovskite solar cell | |
| CN109728169B (en) | Perovskite solar cell doped with functional additive and preparation method thereof | |
| CN113903861B (en) | Perovskite solar cell rapidly annealed in air and preparation method thereof | |
| CN113130762B (en) | Light absorption layer material of solar cell, ternary cation perovskite solar cell and preparation method thereof | |
| CN114678472A (en) | FAPBI3Perovskite thin film and method for efficient perovskite solar cell by using same | |
| CN113193126B (en) | Preparation method for realizing surface reconstruction of non-methylamine perovskite thin film and application thereof | |
| CN113471361B (en) | Copper indium selenium quantum dot modified perovskite film and preparation method and application thereof | |
| CN114551637A (en) | Perovskite light absorption layer and preparation method thereof, and solar cell and preparation method thereof | |
| CN114203920A (en) | Method for passivating inorganic perovskite solar cell by inorganic material | |
| CN108767112B (en) | BiI with different hole transport layers3Solar cell and preparation method thereof | |
| CN113972323A (en) | Sodium thiocyanate-doped efficient and stable perovskite solar cell and preparation method thereof | |
| CN113437226A (en) | Preparation method of 4-pyridylmethylamine bromine optimized tin-lead mixed perovskite solar cell | |
| CN111403606A (en) | Lycopene-doped perovskite solar cell and preparation method thereof | |
| CN115768222A (en) | Perovskite solar cell and rapid preparation method thereof | |
| CN109786565A (en) | A kind of inorganic perovskite solar battery of no hole transmission layer and preparation method thereof | |
| CN114583061A (en) | Lead-free tin-based perovskite thin film with three-dimensional structure and preparation method of solar cell thereof | |
| CN114156414A (en) | High-efficiency stable CsPbI3Preparation method of inorganic perovskite battery | |
| CN113130770B (en) | Perovskite solar cell and preparation method thereof | |
| CN113257955B (en) | Preparation method of all-inorganic perovskite carbon-based solar cell with high stability and photoelectric performance in high-humidity environment | |
| CN113192843B (en) | Preparation method and application of novel non-lead-based perovskite film | |
| CN115734621A (en) | Perovskite solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |