CN113193057A - Composite antireflection film for silicon solar cell and preparation method thereof - Google Patents

Composite antireflection film for silicon solar cell and preparation method thereof Download PDF

Info

Publication number
CN113193057A
CN113193057A CN202110619945.1A CN202110619945A CN113193057A CN 113193057 A CN113193057 A CN 113193057A CN 202110619945 A CN202110619945 A CN 202110619945A CN 113193057 A CN113193057 A CN 113193057A
Authority
CN
China
Prior art keywords
solar cell
layer
zno
silicon solar
seed layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110619945.1A
Other languages
Chinese (zh)
Inventor
汪雷
王美慧子
崔豪
杨德仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University ZJU
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN202110619945.1A priority Critical patent/CN113193057A/en
Publication of CN113193057A publication Critical patent/CN113193057A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a composite antireflection film for a silicon solar cell and a preparation method thereof. According to the invention, the antireflection layer with a certain nano structure is prepared between the passivation layer and the packaging material of the solar cell. SiN in this order from the surface of the solar cell upwardxThe device comprises a layer, a ZnO seed layer, a ZnO nanostructure layer and a battery packaging material. The prepared antireflection structure is positioned on the outer side of the cell electrode, can be overlaid on the existing cell preparation process, and can effectively reduce the reflection of the surface of the solar cell on incident light in a wide waveband, so that the photoelectric conversion efficiency of the solar cell is improved. The preparation method adopted by the invention has simple steps and lower cost, can prepare a large-area uniform antireflection film, and has certain commercial application prospect.

Description

Composite antireflection film for silicon solar cell and preparation method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a composite antireflection film for a crystalline silicon solar cell and a preparation method thereof.
Background
The crystalline silicon solar cell has the advantages of abundant raw materials, low cost and high photoelectric conversion efficiency, so that the crystalline silicon solar cell becomes the earliest commercialized solar cell, and the market accounts for over 90 percent nowadays. Higher photoelectric conversion efficiency is always a goal to be pursued. The limiting factors for solar cell efficiency are mainly four, namely the reflection of incident light by the surface, carrier recombination, temperature and cell resistance. For polished silicon, the refractive index of the surface for incident light can reach 35%, and such losses are clearly unacceptable. Therefore, antireflection is a very important part of solar cell design and fabrication.
There are many methods for realizing the antireflection of the solar cell, and the idea can be roughly divided into surface texturing and surface antireflection film. In industrial production, the production of the battery piece generally goes through two steps of texturing and depositing an antireflection film so as to further reduce the reflectivity of the visible light wave band.
In recent years, in the process of cutting silicon ingots into silicon wafers, the traditional mortar wire cutting is gradually replaced by a diamond wire cutting method for silicon wafers. The diamond wire has high cutting speed, and cut marks of the silicon wafer obtained by cutting are almost parallel and have very light damage, which is very unfavorable for acid texturing.
The method of acid etching by combining hydrofluoric acid and nitric acid is used for texturing polysilicon industrially, and the method requires a silicon wafer surface to have a rich damaged layer. At present, methods for solving the problem of texturing of diamond wire-cut polycrystalline silicon chips include metal-assisted chemical acid corrosion, additive acid corrosion and the like. Where metal assisted chemical etching can significantly reduce the silicon wafer reflectivity, the rising cost, metal removal and passivation of complex surfaces due to the metal used in the process are difficult points of this approach. The anti-reflection structure of the worm-shaped pits can be obtained by adding the additive into the solution corroded by mature acid, but the obtained silicon wafer has surface reflectivity which is much different from that of a monocrystalline silicon wafer, and a good anti-reflection effect cannot be realized. Therefore, no low-cost and effective method for polycrystalline silicon texturing which is suitable for industrial diamond wire cutting exists at present. This also leads to a significant reduction in the market share of polycrystalline silicon solar cells.
Based on the condition that the antireflection effect of the existing polycrystalline silicon solar cell is not good, the cell is laminated with a more effective antireflection film layer without influencing the electrical performance of the cell, so that the conversion efficiency of the related solar cell is improved, and the packaging requirement of the cell module is also considered when an outer antireflection structure of the solar cell is designed. The commercial batteries are mostly encapsulated by glass, which requires that the refractive index of the antireflection structure on the outer layer of the battery piece is between a silicon chip and glass.
The present disclosure is based on the above analysis of an anti-reflective film, and provides a transparent anti-reflective film with a specific nanostructure and a method for preparing the same.
Disclosure of Invention
The invention provides a ZnO antireflection film for a silicon solar cell and a preparation method thereof.
The technical scheme adopted by the invention is as follows:
a composite antireflection film for a silicon solar cell, wherein the surface of the silicon solar cell is plated with a layer of SiNxAnd the anti-reflection film is a ZnO seed layer covering the surface of the cell and a ZnO nano-structure layer growing on the ZnO seed layer.
Preferably, the nanostructure of the ZnO nanostructure layer is a cone structure, a needle structure or a rod structure.
Preferably, the total thickness of the ZnO seed layer and the ZnO nanostructure layer is 10-9000 nanometers.
The invention also provides a preparation method of the composite antireflection film for the silicon solar cell, which comprises the following steps:
s1, dissolving zinc acetate dihydrate in ethanol, dripping monoethanolamine, mixing uniformly to obtain a precursor solution, standing and aging to obtain transparent and uniform zinc acetate sol;
s2, uniformly covering zinc acetate sol on the surface of the crystalline silicon solar cell, drying and then carrying out heat treatment to form a ZnO seed layer;
s3, dissolving zinc nitrate hexahydrate in water, and adding an alkali solution to prepare an alkaline mixed solution;
s4, placing the crystalline silicon solar cell covered with the ZnO seed layer into the mixed solution, placing the crystalline silicon solar cell into the mixed solution to react at a reaction temperature of 60-120 ℃, and gradually growing a ZnO nano-structure layer on the ZnO seed layer.
Preferably, in step S1, the precursor solution is left for aging for more than 1 hour.
Preferably, in step S2, the heat treatment temperature is greater than 300 ℃, and the heat treatment time is not less than 1 hour; the heat treatment is preferably carried out in a muffle furnace; the zinc acetate sol is preferably coated on the surface of the cell piece by means of ultrasonic spraying, spin coating or pulling.
Preferably, in step S3, the alkali solution is ammonia water or hexamethylenetetramine; zn in the mixed solution2+The concentration of (A) is 0.002M-11M, and the pH value of the solution is within the range of 9-12 at 10 ℃.
Preferably, in step S4, the crystalline silicon solar cell is placed in the mixed solution in the container in a manner that the ZnO seed layer faces downward, but the ZnO seed layer is suspended from the bottom of the container and does not contact the bottom of the container.
Preferably, in step S4, the reaction is performed in a water bath or hydrothermal manner, and the reaction time is 15-300 min.
Preferably, in step S4, the back electrode and the surface grid electrode on the battery piece put in the mixed solution should be protected to avoid or reduce contact with the alkaline reaction solution.
The invention has the beneficial effects that: the antireflection film prepared by the invention and the single-layer SiNxCompared with the thin film, the thin film realizes remarkable antireflection in a wide wavelength band of visible light, and the light flux incident to the solar cell is increased, so that the photoelectric conversion rate of the solar cell is improved. The preparation method can prepare the large-area antireflection film, the preparation process does not need vacuum, the cost is low, the antireflection film can be added on the finished battery piece, and the preparation method is compatible with the existing process and has the commercialization potential.
Drawings
Fig. 1 is a schematic cross-sectional view of a battery cell with an additional antireflection film in example 1.
Fig. 2 is a cross-sectional SEM image of the battery plate with the antireflection film added in example 1.
Fig. 3 is a graph showing the reflection comparison between the cell sheet in which the antireflection film is added and the commercial cell sheet in example 1.
Fig. 4 is a schematic cross-sectional view of a battery plate with an additional antireflection film in example 2.
Fig. 5 is a cross-sectional SEM image of the battery plate with the antireflection film added in example 2.
Fig. 6 is a graph comparing the reflection of the cell plate with the additional antireflection film in example 2 with that of the commercial cell plate.
Fig. 7 is a cross-sectional SEM image of the battery plate with the antireflection film added in example 3.
Fig. 8 is a graph comparing the reflection of the cell plate with the additional antireflection film in example 3 with that of the commercial cell plate.
Fig. 9 is a graph comparing the external quantum efficiency and the integrated current of the cell plate to which the antireflection film is added in example 3 with those of the commercial cell plate.
Detailed Description
The invention is further described below with reference to the figures and the specific embodiments.
The antireflection film provided by the invention is prepared by a layer of SiN on the surfacexThe surface of the crystalline silicon solar cell piece with the metal grid lines printed on the surface is printed through screen printing, and the crystalline silicon solar cell piece has a mature commercial product. Therefore, the antireflection film can be added on the surface of the commercial cell, and further, the remarkable antireflection effect can be realized in a wide visible light waveband.
The antireflection film has a two-layer structure and comprises a ZnO seed layer covering the surface of the cell and a ZnO nano-structure layer growing on the ZnO seed layer. When the antireflection film is prepared on the surface of a crystalline silicon solar cell, firstly, a layer of zinc acetate sol is covered on the surface of the cell, and a ZnO seed layer is obtained through heat treatment. The seed layer can improve the growth speed and the quality of a subsequent ZnO structure layer. And then growing a ZnO nano structure on the ZnO seed layer by a water bath or hydrothermal method. In the invention, the ZnO nanostructure layer has nanostructure types including a cone structure, a needle structure and a rod structure, the total thickness of the ZnO seed layer and the ZnO nanostructure layer is 10-9000 nanometers, and the shape and the thickness of the nanostructure in the ZnO nanostructure layer can be controlled by adjusting reaction conditions.
The preparation method of the composite antireflection film comprises the following steps:
(1) dissolving zinc acetate dihydrate in ethanol, dripping a proper amount of monoethanolamine, uniformly mixing to obtain a precursor solution, standing and aging for a period of time to obtain transparent and uniform zinc acetate sol. The precursor solution should generally be left to stand for aging times greater than 1 hour.
(2) Uniformly covering the surface of the crystalline silicon solar cell with zinc acetate sol in the modes of ultrasonic spraying, spin coating or lifting, drying, and then carrying out heat treatment to form a ZnO seed layer. The heat treatment temperature is generally more than 300 ℃ and the heat treatment time is not less than 1 hour. In this step, the drying process may be performed in a forced air drying oven, and the heat treatment process may be performed by placing the battery piece in a muffle furnace.
(3) Dissolving zinc nitrate hexahydrate in water, and adding a certain amount of alkaline solution to prepare an alkaline mixed solution. The alkaline solution can be ammonia water or hexamethylenetetramine, and Zn is in the mixed solution finally prepared2+The concentration of the (B) can be 0.002-11M, and the pH value of the solution can be controlled within 9-12 at 10 ℃.
(4) And putting the crystalline silicon solar cell covered with the ZnO seed layer into the mixed solution, reacting at a reaction temperature of 60-120 ℃, and gradually growing a ZnO nanostructure layer on the ZnO seed layer.
In the step (4), the crystalline silicon solar cell is placed into the mixed solution in the container in a mode that the ZnO seed layer faces downwards, but the ZnO seed layer is suspended relative to the bottom of the container and does not closely contact the bottom of the container, so that a space is reserved for growth of a ZnO nano structure. Also in this process, care should be taken to protect the back electrode and surface grid electrode on the cell pieces placed in the container from or reduce contact with the alkaline reaction solution in order to avoid damage to the electrodes on the cell pieces. The reaction mode in the step can be water bath or hydrothermal, and the reaction time can be controlled to be 15-300 min.
The following examples are provided to illustrate the specific manufacturing method and the corresponding technical effects of the antireflection film. It should be understood, however, that the following examples are provided to further illustrate the principles and features of the present invention, but the scope of the present invention is not limited thereto. In the following examples, the cells used were commercial crystalline silicon solar cells having a final surface of SiNxAnd the layers are printed with metal grid lines by screen printing.
Example 1
A ZnO antireflection film for a silicon solar cell is prepared by the following steps:
(1) preparing ZnO seed layer sol: dissolving 0.01mol of zinc acetate dihydrate in 100mL of ethanol, dripping 1mL of monoethanolamine, stirring for 30min, and standing for 24 hours to obtain transparent and uniform zinc acetate sol.
(2) Preparing a ZnO seed layer: with SiN deposited on the surfacexAnd carrying out ultrasonic spraying on the zinc acetate sol on the battery piece of the film and the grid for 3 minutes to uniformly cover a layer of zinc acetate sol on the surface of the battery piece. Then, the cell piece was dried in a forced air drying oven and then heat-treated at 400 ℃ for 1 hour to form a ZnO seed layer.
(3) Preparing a reaction solution: 0.02M zinc nitrate hexahydrate aqueous solution is prepared by deionized water, and ammonia water with the same mass as zinc nitrate hexahydrate is added into the aqueous solution to prepare mixed solution for reaction.
(4) And pouring 60mL of mixed solution into the hydrothermal kettle, enabling the cell with the ZnO seed layer to lean against the inner wall of the hydrothermal kettle, immersing the ZnO seed layer in the mixed solution, suspending the ZnO seed layer relative to the bottom of the container, not tightly contacting the bottom of the container, and sealing the hydrothermal kettle. It should be noted that the back electrode and the surface grid electrode on the cell should be protected to avoid or reduce contact with the alkaline reaction solution.
(5) And (3) keeping the hydrothermal kettle at 90 ℃ for 3 hours, cooling, taking out the cell, washing with deionized water, and drying.
After the hydrothermal reaction is finished, a ZnO nano-structure layer is gradually grown on the ZnO seed layer, the sectional shape of the ZnO nano-structure layer is analyzed by an electron microscope and is shown in figure 1, the nano-structure is in a cone-shaped structure, and the specific electron microscope is shown in figure 2.
(6) Packaging the battery: packaging the dried cell by using glass, and finally sequentially arranging SiN on the surface of the solar cell from top to bottomxThe solar cell comprises a layer, a ZnO seed layer, a ZnO nanostructure layer and cell packaging glass.
In order to verify the performance of the solar cell with the additional antireflection film in the embodiment, the reflection condition of the solar cell is measured and compared with that of an original commercial cell, and the comparison result is shown in fig. 3, it can be obviously found that after a layer of antireflection film is superimposed on the commercial cell, the antireflection effect in a wide band of visible light is substantially improved.
Example 2
A ZnO antireflection film for a silicon solar cell is prepared by the following steps:
(1) preparing ZnO seed layer sol: dissolving 0.01mol of zinc acetate dihydrate in 100mL of ethanol, dripping 1mL of monoethanolamine, stirring for 30min, and standing for 24 hours to obtain transparent and uniform zinc acetate sol.
(2) Preparing a ZnO seed layer: SiN is deposited on the surfacexAnd spin-coating zinc acetate sol on the surfaces of the thin film and the grid cell. At 500r/min2The acceleration of the rotating speed is increased to 2000r/min, the spinning is carried out for 25s, and the process is repeated for 3 times. After the cell piece is dried in a forced air drying oven, the cell piece is thermally treated for 1 hour at the temperature of 450 ℃ to form a ZnO seed layer.
(3) Preparing a reaction solution: 0.04M zinc nitrate hexahydrate aqueous solution is prepared by deionized water, and hexamethylenetetramine with the same mass as zinc nitrate hexahydrate is added into the aqueous solution to prepare mixed solution for reaction.
(4) And pouring 60mL of mixed solution into the beaker, floating the cell sheet with the ZnO seed layer on the surface of the solution in a downward mode, and enabling the ZnO seed layer to be immersed in the mixed solution but to be suspended relative to the bottom of the container and not to be in close contact with the bottom of the container. It should be noted that the back electrode and the surface grid electrode on the cell should be protected to avoid or reduce contact with the alkaline reaction solution.
(5) And (3) carrying out water bath on the beaker at the temperature of 90 ℃ for 30 minutes, cooling, taking out the cell piece, washing with deionized water, and drying.
After the water bath is finished, a ZnO nano-structure layer is gradually grown on the ZnO seed layer, the sectional shape of the ZnO nano-structure layer is analyzed by an electron microscope and is shown in figure 4, the nano-structure is in a rod-shaped structure, and a specific electron microscope is shown in figure 5.
(6) Packaging the battery: packaging the dried cell by using glass, and finally sequentially arranging SiN on the surface of the solar cell from top to bottomxThe solar cell comprises a layer, a ZnO seed layer, a ZnO nanostructure layer and cell packaging glass.
In order to verify the performance of the solar cell with the additional antireflection film in this embodiment, the reflection conditions of the solar cell and the original commercial cell are measured and compared, and the comparison result is shown in fig. 6, it can be obviously found that after a layer of antireflection film is superimposed on the commercial cell in this embodiment, the antireflection effect in a wide band of visible light is substantially improved.
Example 3
A ZnO antireflection film for a silicon solar cell is prepared by the following steps:
(1) preparing ZnO seed layer sol: dissolving 0.01mol of zinc acetate dihydrate in 100mL of ethanol, dripping 1mL of monoethanolamine, stirring for 30min, and standing for 24 hours to obtain transparent and uniform zinc acetate sol.
(2) Preparing a ZnO seed layer: with SiN deposited on the surfacexAnd carrying out ultrasonic spraying on the zinc acetate sol on the battery piece of the film and the grid for 3 minutes to uniformly cover a layer of zinc acetate sol on the surface of the battery piece. Then, the cell piece was dried in a forced air drying oven and then heat-treated at 450 ℃ for 1 hour to form a ZnO seed layer.
(3) Preparing a reaction solution: 0.04M zinc nitrate hexahydrate aqueous solution is prepared by deionized water, and ammonia water with the same mass as zinc nitrate hexahydrate is added into the aqueous solution to prepare mixed solution for reaction.
(4) And pouring 30mL of mixed solution into the hydrothermal kettle, floating the cell sheet with the ZnO seed layer on the surface of the solution in a downward mode, immersing the ZnO seed layer in the mixed solution, suspending the ZnO seed layer relative to the bottom of the container, enabling the ZnO seed layer not to be in close contact with the bottom of the container, and sealing the hydrothermal kettle. It should be noted that the back electrode and the surface grid electrode on the cell should be protected to avoid or reduce contact with the alkaline reaction solution.
(5) And (3) keeping the hydrothermal kettle at 90 ℃ for 2 hours, cooling, taking out the cell, washing with deionized water, and drying.
After the hydrothermal reaction is finished, a ZnO nanostructure layer is gradually grown on the ZnO seed layer, and the sectional shape of the ZnO nanostructure layer is analyzed by an electron microscope and shown in fig. 1, and the nanostructure is in a cone-shaped structure, and the specific electron microscope is shown in fig. 7.
(6) Packaging the battery: packaging the dried cell by using glass, and finally sequentially arranging SiN on the surface of the solar cell from top to bottomxThe solar cell comprises a layer, a ZnO seed layer, a ZnO nanostructure layer and cell packaging glass.
In order to verify the performance of the solar cell with the additional antireflection film in this embodiment, the reflection conditions of the solar cell and the original commercial cell are measured and compared, and the comparison result is shown in fig. 8, it can be obviously found that after a layer of antireflection film is superimposed on the commercial cell in this embodiment, the antireflection effect in a wide band of visible light is substantially improved.
In the above three embodiments, the solar cell with the additional antireflection film achieves significant antireflection in a wide wavelength band of visible light compared with the original commercial cell, and it can be seen that the antireflection effect caused by the tapered ZnO nanostructure layer in examples 1 and 3 is better than that of the rod-shaped ZnO nanostructure layer in example 2.
In addition, the improvement of the antireflection effect increases the luminous flux incident on the solar cell, thereby improving the photoelectric conversion rate of the solar cell. Taking example 3 as an example, a comparison graph of external quantum efficiency and integrated current of a solar cell after adding an antireflection film and an original commercial cell is shown in fig. 9, and it can be obviously found that the arrangement of the antireflection film can increase the luminous flux incident on the solar cell, thereby improving the photoelectric conversion rate of the solar cell. And because the antireflection film prepared by the invention is positioned outside the electrode of the cell and is arranged between the passivation layer of the solar cell and the packaging material, the antireflection film can be superposed on the existing cell preparation process. In addition, the preparation method of the antireflection film adopted by the invention has simple steps and lower cost, so the invention can be used for improving the antireflection of the existing battery and has better application prospect.
The above-described embodiments are merely preferred embodiments of the present invention, which should not be construed as limiting the invention. Various changes and modifications may be made by one of ordinary skill in the pertinent art without departing from the spirit and scope of the present invention. Therefore, the technical scheme obtained by adopting the mode of equivalent replacement or equivalent transformation is within the protection scope of the invention.

Claims (10)

1. A composite antireflection film for a silicon solar cell, wherein the surface of the silicon solar cell is plated with a layer of SiNxAnd the crystalline silicon solar cell piece printed with the grid line is characterized in that: the antireflection film comprises a ZnO seed layer covering the surface of the cell and a ZnO nano-structure layer growing on the ZnO seed layer.
2. The composite antireflection film for a silicon solar cell according to claim 1, characterized in that: the ZnO nanostructure layer has a cone-shaped structure, a needle-shaped structure and a rod-shaped structure.
3. The composite antireflection film for a silicon solar cell according to claim 1, characterized in that: the total thickness of the ZnO seed layer and the ZnO nanostructure layer is 10-9000 nanometers.
4. A method for preparing a composite anti-reflective film for a silicon solar cell according to claim 1, comprising the steps of:
s1, dissolving zinc acetate dihydrate in ethanol, dripping monoethanolamine, mixing uniformly to obtain a precursor solution, standing and aging to obtain transparent and uniform zinc acetate sol;
s2, uniformly covering zinc acetate sol on the surface of the crystalline silicon solar cell, drying and then carrying out heat treatment to form a ZnO seed layer;
s3, dissolving zinc nitrate hexahydrate in water, and adding an alkali solution to prepare an alkaline mixed solution;
s4, placing the crystalline silicon solar cell covered with the ZnO seed layer into the mixed solution, placing the crystalline silicon solar cell into the mixed solution to react at a reaction temperature of 60-120 ℃, and gradually growing a ZnO nano-structure layer on the ZnO seed layer.
5. The method of claim 4, wherein: in step S1, the precursor solution is left to stand for an aging time of more than 1 hour.
6. The method of claim 4, wherein: in step S2, the heat treatment temperature is more than 300 ℃, and the heat treatment time is not less than 1 hour; the heat treatment is preferably carried out in a muffle furnace; the zinc acetate sol is preferably coated on the surface of the cell piece by means of ultrasonic spraying, spin coating or pulling.
7. The method of claim 4, wherein: in step S3, the alkali solution is ammonia water or hexamethylenetetramine; zn in the mixed solution2+The concentration of (A) is 0.002M-11M, and the pH value of the solution is within the range of 9-12 at 10 ℃.
8. The method of claim 4, wherein: in step S4, the crystalline silicon solar cell is placed in the mixed solution in the container in a manner that the ZnO seed layer faces downward, but the ZnO seed layer is suspended from the bottom of the container and does not contact the bottom of the container.
9. The method of claim 4, wherein: in step S4, the reaction is carried out in a water bath or hydrothermal mode, and the reaction time is 15-300 min.
10. The method of claim 4, wherein: in step S4, the back electrode and the surface grid electrode on the battery piece put into the mixed solution should be protected to avoid or reduce contact with the alkaline reaction solution.
CN202110619945.1A 2021-06-03 2021-06-03 Composite antireflection film for silicon solar cell and preparation method thereof Pending CN113193057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110619945.1A CN113193057A (en) 2021-06-03 2021-06-03 Composite antireflection film for silicon solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110619945.1A CN113193057A (en) 2021-06-03 2021-06-03 Composite antireflection film for silicon solar cell and preparation method thereof

Publications (1)

Publication Number Publication Date
CN113193057A true CN113193057A (en) 2021-07-30

Family

ID=76975877

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110619945.1A Pending CN113193057A (en) 2021-06-03 2021-06-03 Composite antireflection film for silicon solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113193057A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101319370A (en) * 2008-06-24 2008-12-10 济南大学 Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
CN101800130A (en) * 2010-04-19 2010-08-11 西安交通大学 Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure
CN102212807A (en) * 2011-04-07 2011-10-12 无锡市佳诚太阳能科技有限公司 Anti-reflection film for crystal silicon solar cell and film plating method
CN103489942A (en) * 2013-10-14 2014-01-01 南开大学 Light trapping structure based on nano-zinc oxide silicon heterojunction battery, and preparation method of the light trapping structure
CN104692671A (en) * 2015-04-02 2015-06-10 天津城建大学 Preparation method of super-hydrophobic self-cleaning glass based on ZnO nano array coating
CN106784035A (en) * 2016-12-21 2017-05-31 浙江海洋大学 A kind of ZnO antireflection films and its film plating process for silicon solar cell
CN109300996A (en) * 2018-08-08 2019-02-01 西安电子科技大学 A kind of flexible transient state silicon thin film photodetector of MSM structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101319370A (en) * 2008-06-24 2008-12-10 济南大学 Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
CN101800130A (en) * 2010-04-19 2010-08-11 西安交通大学 Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure
CN102212807A (en) * 2011-04-07 2011-10-12 无锡市佳诚太阳能科技有限公司 Anti-reflection film for crystal silicon solar cell and film plating method
CN103489942A (en) * 2013-10-14 2014-01-01 南开大学 Light trapping structure based on nano-zinc oxide silicon heterojunction battery, and preparation method of the light trapping structure
CN104692671A (en) * 2015-04-02 2015-06-10 天津城建大学 Preparation method of super-hydrophobic self-cleaning glass based on ZnO nano array coating
CN106784035A (en) * 2016-12-21 2017-05-31 浙江海洋大学 A kind of ZnO antireflection films and its film plating process for silicon solar cell
CN109300996A (en) * 2018-08-08 2019-02-01 西安电子科技大学 A kind of flexible transient state silicon thin film photodetector of MSM structure

Similar Documents

Publication Publication Date Title
EP4027395A1 (en) Efficient back passivation crystalline silicon solar cell and manufacturing method therefor
US20140014175A1 (en) Solar cell element and solar cell module
Xia et al. CuO nanoleaves enhance the c-Si solar cell efficiency
JP5848454B2 (en) Solar cell element
CN102800758A (en) Biomimetic preparation method for passivation layer on surface of crystalline silicon solar cell
JP5813212B2 (en) Solar cell element
CN106972079B (en) The cleaning method at the PERC silicon chip of solar cell back side
CN209592050U (en) A kind of solar cell with passivation layer structure
CN114203833A (en) Manufacturing method of back contact heterojunction solar cell with low laser damage
CN114068731A (en) Back contact heterojunction solar cell characterized by low laser damage and manufacturing method thereof
JP4320529B2 (en) Compound thin film solar cell and manufacturing method thereof
CN102569502A (en) Wet method etching process
CN104300032A (en) Single crystal silicon solar ion implantation technology
CN204311157U (en) For the silicon chip of solar cell
CN104362209B (en) Crystalline silicon solar cell subjected to back polishing and preparation technology thereof
CN112349802B (en) Manufacturing method of ingot casting single crystal or polycrystalline amorphous silicon heterojunction solar cell
CN113193057A (en) Composite antireflection film for silicon solar cell and preparation method thereof
CN105244417B (en) Crystalline silicon solar cell and preparation method thereof
CN113921649A (en) Preparation method of silicon-based heterojunction solar cell
Lin et al. High efficiency enhancement of multi-crystalline silicon solar cells with syringe-shaped ZnO nanorod antireflection layers
CN113161447B (en) Phosphine annealing pretreatment method for casting monocrystalline or polycrystalline silicon slice
CN113113500B (en) Preparation method of full-angle light trapping suede and crystalline silicon solar cell
CN113540291B (en) Manufacturing method of two-end perovskite laminated battery and two-end perovskite laminated battery
Ji et al. Improvement of the surface structure for the surface passivation of black silicon
JP6430842B2 (en) Method for manufacturing solar cell element and method for manufacturing solar cell module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20210730