CN113192857A - Method for judging failure of crystalline silicon solar cell - Google Patents
Method for judging failure of crystalline silicon solar cell Download PDFInfo
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- CN113192857A CN113192857A CN202110422772.4A CN202110422772A CN113192857A CN 113192857 A CN113192857 A CN 113192857A CN 202110422772 A CN202110422772 A CN 202110422772A CN 113192857 A CN113192857 A CN 113192857A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention relates to the field of solar cell production. A method for judging the failure of a crystalline silicon solar cell is characterized in that the crystalline silicon solar cell is produced by adopting SE + PERC, if the following conditions can be completely met, the crystalline silicon solar cell is a good cell, otherwise, the crystalline silicon solar cell is a failed cell, and the condition I is that no obvious and clear SE fine grid line exists in the appearance of the cell; placing the cell under a lens of a quadratic element microscope, selecting a light source with the brightness of 30 percent, selecting a power microscope with the brightness of 96X, and observing that no obvious bright spots or bright spots exist in the area except the grid lines; and thirdly, placing the coated blue film under a lens of a quadratic element microscope, selecting light source brightness of 50 percent, selecting a power lens of 96X, and observing whether the light spots of the grid line are full and have no unfilled corners.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
With the development of the manufacturing technology of the crystalline silicon solar cell, the SE PERC technology emerges, and the conversion efficiency of the cell is improved, and meanwhile, more and more defects of the cell in the production process are exposed. In the SE process, the difference of the appearance and brightness of the light spot presented by the SE is always found through daily monitoring, and the abnormal problem point in batch production needs to be detected through experimental tracking.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: and judging whether the crystalline silicon solar cell is invalid or not.
The technical scheme adopted by the invention is as follows: a method for judging the failure of a crystalline silicon solar cell is characterized in that the crystalline silicon solar cell is produced by adopting SE + PERC, if the following conditions can be completely met, the crystalline silicon solar cell is a good cell, and if the following conditions are not met, the crystalline silicon solar cell is a failed cell
The method comprises the following steps that firstly, obvious and clear SE fine grid lines do not exist in the appearance of the battery piece;
placing the cell under a lens of a quadratic element microscope, selecting a light source with the brightness of 30 percent, selecting a power microscope with the brightness of 96X, and observing that no obvious bright spots or bright spots exist in the area except the grid lines;
and thirdly, placing the coated blue film under a lens of a quadratic element microscope, selecting light source brightness of 50 percent, selecting a power lens of 96X, and observing whether the light spots of the grid line are full and have no unfilled corners.
The specific judgment standard is that a digital camera is adopted to photograph the crystalline silicon solar cell piece with 800 ten thousand pixels or more, a computer is adopted to perform feature extraction on a photographed image, the pixel difference value of the unexpected region of the pixel of the region where the fine grid line is located and the grid line is compared with a first set value, and if the pixel difference value is less than or equal to the set value, the appearance of the cell piece does not have the obvious clear SE fine grid line.
The absence of obvious bright spots and bright spots means that the difference of pixel values in the area outside the grid line does not exceed a second set value, and the bright spots can be identified by a computer after photographing and can also be identified by human eyes actually. But requires a skilled technician and a certain experience.
Observing that grid line light spots are full and have no unfilled corners means that a qualified blue film after coating of a crystalline silicon solar cell is selected and placed under a secondary microscope lens, light source brightness is selected to be 50%, a multiplying mirror is selected to be 96X, a standard picture is photographed and obtained, the cell to be measured is placed under the secondary microscope lens, light source brightness is selected to be 30%, the multiplying mirror is selected to be 96X, the picture to be measured is photographed and obtained, the standard picture and the picture to be measured are extracted through computer characteristics, the grid line area of the standard picture and each corresponding place of the grid line area of the picture to be measured are compared, if the pixel difference value of the two is larger than a third set value in a certain place, the appearance of the cell is proved to have obvious clear SE fine grid lines, and otherwise, the appearance of the cell is proved to have no obvious clear SE fine grid lines.
The invention has the beneficial effects that: the invention can effectively find the battery piece with low failure rate in time, reduce defective products and improve the quality of the battery piece.
Detailed Description
Whether obvious clear SE fine grid lines exist in the appearance of the SE rear battery piece or not is observed, if yes, the SE rear battery piece can be directly reworked, and an SE machine table energy light path is debugged.
With the aid of a two-dimensional microscope, the SE rear cell is placed under a lens, the brightness of a light source is 30%, and the magnification of a microscope is 96X. And the brightness of the light spot displayed by imaging of the non-grid line region under the quadratic element is bright spot if the imaging has obvious bright spots. And reworking the SE rear battery piece and adjusting the SE machine. And monitoring the spot bright spots shown by the silicon wafer after the SE in daily. In the production process, the laser emission energy of the SE machine station is gradually lost and reduced, and when the energy is reduced to a certain degree, energy focusing can be generated and converged to a point, so that the silicon wafer is greatly damaged, and low failure is formed.
After passing through the coated blue film, the blue film passes through an SE machine, and a light source brightness of 50% is selected by means of a quadratic microscope, and a multiplying mirror is selected by 96X. Whether light spots are full (whether a uniform regular pattern is formed) or not and whether the light spots are unfilled are shown by imaging of grid lines under a quadratic element. If the sizes are not uniform, if one of the conditions appears, the SE machine table needs to be adjusted.
And monitoring the spot defects of the coated silicon wafer in daily life. In the production process, the laser emission energy of the SE machine station is gradually lost and reduced, and the produced silicon wafer has facula loss due to abrasion, dust and other factors of the galvanometer and the refractor.
Claims (4)
1. A method for judging the failure of a crystalline silicon solar cell, which is produced by adopting SE + PERC, is characterized in that: if the following conditions can be all met, the crystalline silicon solar cell is a good cell, otherwise, the crystalline silicon solar cell is a failed cell
The method comprises the following steps that firstly, obvious and clear SE fine grid lines do not exist in the appearance of the battery piece;
placing the cell under a lens of a quadratic element microscope, selecting a light source with the brightness of 30 percent, selecting a power microscope with the brightness of 96X, and observing that no obvious bright spots or bright spots exist in the area except the grid lines;
and thirdly, placing the coated blue film under a lens of a quadratic element microscope, selecting light source brightness of 50 percent, selecting a power lens of 96X, and observing whether the light spots of the grid line are full and have no unfilled corners.
2. The method for judging the failure of the crystalline silicon solar cell according to claim 1, wherein the method comprises the following steps: the specific judgment standard is that a digital camera is adopted to photograph the crystalline silicon solar cell piece with 800 ten thousand pixels or more, a computer is adopted to perform feature extraction on a photographed image, the pixel difference value of the unexpected region of the pixel of the region where the fine grid line is located and the grid line is compared with a first set value, and if the pixel difference value is less than or equal to the set value, the appearance of the cell piece does not have the obvious clear SE fine grid line.
3. The method for judging the failure of the crystalline silicon solar cell according to claim 1, wherein the method comprises the following steps: the absence of obvious bright spots and bright spots means that the difference of pixel values in the area outside the grid line does not exceed a second set value.
4. The method for judging the failure of the crystalline silicon solar cell according to claim 1, wherein the method comprises the following steps: observing that grid line light spots are full and have no unfilled corners means that a qualified blue film after coating of a crystalline silicon solar cell is selected and placed under a secondary microscope lens, light source brightness is selected to be 50%, a multiplying mirror is selected to be 96X, a standard picture is photographed and obtained, the cell to be measured is placed under the secondary microscope lens, light source brightness is selected to be 30%, the multiplying mirror is selected to be 96X, the picture to be measured is photographed and obtained, the standard picture and the picture to be measured are extracted through computer characteristics, the grid line area of the standard picture and each corresponding place of the grid line area of the picture to be measured are compared, if the pixel difference value of the two is larger than a third set value in a certain place, the appearance of the cell is proved to have obvious clear SE fine grid lines, and otherwise, the appearance of the cell is proved to have no obvious clear SE fine grid lines.
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| CN202110422772.4A CN113192857B (en) | 2021-04-20 | 2021-04-20 | Method for judging failure of crystalline silicon solar cell |
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| CN202110422772.4A CN113192857B (en) | 2021-04-20 | 2021-04-20 | Method for judging failure of crystalline silicon solar cell |
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| CN113192857B CN113192857B (en) | 2023-05-12 |
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