CN106990120A - The quality determining method and its detection means of a kind of solar battery sheet - Google Patents

The quality determining method and its detection means of a kind of solar battery sheet Download PDF

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CN106990120A
CN106990120A CN201710300938.9A CN201710300938A CN106990120A CN 106990120 A CN106990120 A CN 106990120A CN 201710300938 A CN201710300938 A CN 201710300938A CN 106990120 A CN106990120 A CN 106990120A
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cell piece
oct
silicon chip
detection
views
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CN106990120B (en
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苏亚
姚晓天
刘会清
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SUZHOU OPTORING TECHNOLOGY Co Ltd
Hebei University
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SUZHOU OPTORING TECHNOLOGY Co Ltd
Hebei University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958Inspecting transparent materials or objects, e.g. windscreens
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • H02S50/15Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

The invention provides a kind of quality determining method of solar battery sheet and its detection means, this method is scanned using detection means to cell piece to be measured, obtains the OCT 3-D views of cell piece;Then gained OCT 3-D views are observed or handled the external appearance characteristic for obtaining cell piece, defective locations, thickness, gate line electrode size and cell piece and fall into the information such as light ability, contactless, not damaged on-line real-time measuremen to solar battery sheet can be achieved.Present invention detection is more comprehensive, and the detection of multiple parameters is only can be achieved with by single detection method and device, testing cost is greatly reduced, while the semi-manufactured goods quality in detectable production line each stage, reference index is provided for each technological process production.

Description

The quality determining method and its detection means of a kind of solar battery sheet
Technical field
The present invention relates to photovoltaic art, and in particular to the quality determining method and its detection dress of a kind of solar battery sheet Put.
Background technology
With the continuous reduction and the continuous aggravation of environmental degradation of fossil energy, using solar energy as the regenerative resource of representative Development more and more paid attention to.Solar cell is a kind of based on photovoltaic effect, converts solar energy into the device of electric energy Part, it has the advantages that reliability height, long lifespan, pollution-free, can do the electricity of artificial satellite, navigation light, transistor etc. Source.With using material difference, solar cell can be divided into silicon solar cell, compound solar cell, dye-sensitized cell and Organic thin film cells etc..Wherein, silicon solar cell is to develop a very fast and more ripe class solar cell, in current industry Change in solar cell, crystal silicon solar battery proportion nearly 90%.
The production of solar cell needs considerable process, in order to obtain higher efficiency and more long life too Positive electricity pond, the detection to solar cell is again a wherein essential procedure.With the Fast Growth of global photovoltaic industry, Quality testing to solar cell it is also proposed higher requirement, and its quality testing can be divided mainly into electric performance test and surface Quality testing.At present, most of manufacture of solar cells producer still carries out surface quality detection by the way of artificial, The visual determination of operating personnel is relied on, therefore also brings many test problems, while product quality hardly results in guarantee.This Outside, artificial detection time is short, can not set up standard to easily falling into subjective opinion on determining defects.
At present, the research to solar cell detection method is a lot, mainly including electron-microscope scanning(SEM), luminescence generated by light scanning (PL), electroluminescent scanning(EL), albedo measurement, I-V characteristic test.Wherein, I-V characteristic test predominantly detects cell piece Electric property, electron-microscope scanning(SEM), luminescence generated by light scanning(PL)With electroluminescent scanning(EL)Defect for cell piece is examined Survey, can detect that cell piece it is hidden split, disconnected grid situations such as, but the above method can not obtain the structural information of profound level, also can not Detect that the size and cell piece of gate line electrode fall into the parameters such as light ability, it usually needs coordinate other detection methods such as reflectivity to enter The quality evaluation of row cell piece and on-line real-time measuremen difficult to realize.Electroluminescent is scanned(EL)Detected for contact, easily to battery Piece causes damage, such as patent document(Application number CN201110104821.6)In disclose a kind of electroluminescent hair of solar battery sheet Optical defect is detected detects integral system with IV, it is main include the probe clamping device for self-contained battery piece, IV detecting systems, The mechanism such as EL detecting systems and circuit conversion device, structure is complex, though it is improved to only use Probe clip cell piece once, But still cell piece can be caused to damage and can not realize more comprehensive detection.Patent document(Application number 201410265102.6) A kind of solar cell piece online quality control method is disclosed, it applies multiple light sources, multiple imaging units and switching mechanism To realize on-line checking, structure is relative complex, and need to overturn cell piece in detection, it is impossible to other ginsengs of detection in addition to defect Number.In addition, electron-microscope scanning(SEM)Cell piece sample need to be handled during detection, and testing cost is higher, is unsuitable for industrialization Using.Because silicon solar cell is frangible, therefore it is more suitable for using non-contact detecting, at present still without a kind of more comprehensively non- Contact detecting method.
The content of the invention
An object of the present invention is just to provide a kind of quality determining method of solar battery sheet, to solve existing detection The problem of method has destructive, high cost to cell piece or can not obtain depth direction information.
The second object of the present invention is just to provide a kind of quality detection device of solar battery sheet.
The purpose of the present invention is achieved through the following technical solutions:A kind of quality determining method of solar battery sheet, Comprise the following steps:
First, cell piece to be measured is scanned using detection means, obtains the OCT 3-D views of cell piece;The detection means Including OCT detecting systems, the OCT detecting systems use the nonabsorbable near-infrared light source of silicon chip;
2nd, gained OCT 3-D views are observed or handled the mass parameter for obtaining cell piece:
(a)Obtain defect, the impurity parameter of cell piece:Pure crystalline silicon is transparent, but defect and impurity meeting in the picture Cause scattering or absorb and be rendered as speck or bright line, defect, the impurity parameter of cell piece are obtained by directly observing;
(b)Obtain thickness, warped degree and the battery grid parameter of cell piece:The upper following table of cell piece is observed by OCT 3-D views Face structure, directly obtains cell piece surface evaporation and grid situation of breaking;
The upper and lower surface position of silicon chip is obtained by border differential operator, and silicon chip is obtained on OCT 3-D views according to pixel Height value h1, then thickness h=h1/n of silicon chip is obtained by silicon chip in the refractive index n of infrared band, according to the thickness of silicon chip and led to Cross engineer's scale and obtain the spacing of adjacent two gate line electrodes and the width of every gate line electrode and height;
Its median plane position is obtained according to the upper and lower surface position of silicon chip, then tried to achieve according to pixel in different zones in the horizontal direction Maximum normal distance between heart face is the warped degree of cell piece.
(c)Obtain cell piece and fall into luminous energy force parameter:The OCT 3-D views of cell piece are averaged along depth direction, obtained To the one-dimensional average intensity values of longitudinal direction, characterized with the light intensity value of cell piece upper surface on the sunken light ability of cell piece, cell piece The light intensity value on surface and the sunken light ability of cell piece are inversely proportional.
The defect parameters for obtaining cell piece include obtaining the surface of cell piece and internal hidden split situation information.
When detecting that cell piece falls into light ability, the chip after former silicon chip, making herbs into wool piece, diffusion sheet and evaporation antireflective coating is entered Row detection, obtains the sunken light ability of the cell piece in different process stage.
A kind of quality detection device of solar battery sheet, including OCT measuring probes, OCT integrated systems and computer;
The OCT measuring probes are connected with OCT integrated systems, and OCT measuring probes are comprising self-focusing scanning lens and use silicon chip Nonabsorbable near-infrared light source, OCT measuring probes are used to carry out laser scanning to cell piece;
The OCT integrated systems are connected with OCT measuring probes and computer respectively, incoming via OCT measuring probes for gathering Cell piece rear scattered light, and obtained interference light signal is converted into electric signal transmission to computer;
Electric signal progress of the computer to input handles the scan image for obtaining cell piece, and image is handled The quality parameter information of cell piece.
The detection means is installed on battery slice assembly line, and on-line real-time measuremen is carried out to battery tablet quality.
Detection method utilizes OCT systems, and uses near-infrared light source, can be achieved to connect the nothing of solar battery sheet Tactile, not damaged on-line real-time measuremen, during detection, need to only be popped one's head in and cell piece is scanned, and cell piece will not be caused to damage, and It is simple to operate, it is easy to accomplish.Secondly, by detecting the backscatter signals of different depth aspect, surface letter can not only be obtained Breath, while the information of determinand depth direction can also be obtained, has good detection effect to the defect inside cell piece, impurity Really.Again, by special light source design and image processing method, detection project is not only made to be easy to observation, and detectable battery External appearance characteristic, defective locations, thickness, gate line electrode size and the cell piece of piece fall into the information such as light ability so that detection is more Comprehensively, the detection of multiple parameters is only can be achieved with by single detection method and device, testing cost is greatly reduced, while can examine The semi-manufactured goods quality in production line each stage is surveyed, reference index is provided for each technological process production.
Structure of the detecting device of the present invention is simple, can be only fitted to battery slice assembly line and carries out real time imagery, price is low, in reality Have broad application prospects in the production line of border.
Brief description of the drawings
Fig. 1 is the structural representation of detection means of the present invention.
Fig. 2 is the 3-D view of the cell piece gathered using detection means of the present invention.
Fig. 3 is the 3-D view for having the hidden cell piece split on lower surface.
Fig. 4 has the 3-D view of the hidden cell piece split for inside.
Fig. 5 is the 3-D view for the cell piece for having internal impurity.
Fig. 6 is the schematic diagram of detection cell piece warped degree.
Fig. 7 is the light intensity signal and depth relationship figure of each stage cell piece semi-finished product.
Fig. 8 is the reflectance map for each stage cell piece semi-finished product that infrared spectrometer is measured.
Embodiment
As shown in figure 1, the structure of detection means of the present invention is integrated including OCT measuring probes 103, computer 102 and OCT System 10.Wherein, OCT measuring probes 103 and computer 102 are connected with OCT integrated systems 101 respectively, OCT measuring probes 103 include self-focusing scanning lens, and OCT measuring probes 103 are swashed by self-focusing scanning lens to solar cell piece 104 Optical scanning, is gathered, OCT collection via the rear orientation light of solar cell piece by OCT measuring probes 103 by OCT integrated systems 101 Obtained interference light signal is converted into electric signal transmission to computer 102 into system 101 to be analyzed and processed, finally obtain by Scan the view data of object.Fig. 2 is to scan the 3-D view that the finished product of cell piece 104 is obtained, detection means using detection means The centre wavelength of light source is near infrared band, and silicon chip does not absorb for the light of the wave band, that is to say, that under the light of this wavelength, Silicon chip shows transparent characteristic, by Fig. 2 it will be clear that two surfaces up and down of solar cell piece, and table inside silicon chip Reveal transparent characteristic.
Cell piece to be measured is scanned using above-mentioned detection device, the OCT 3-D views of cell piece are obtained;Then to institute Obtain OCT 3-D views and observed or handled the mass parameter that can obtain three aspects of solar battery sheet, specific detection and place Reason is described as follows:
First, realization is to the defect of cell piece, the detection of impurity
Pure crystalline silicon should be transparent on 3-D view, but defect and impurity can cause scattering or absorption, show Speck or bright line, so as to be displayed on image.In process of production, the effect of some external force can cause different journeys to silicon chip The injury of degree, slight collision may form hidden split and be difficult to discover, and the present invention can easily detect the hidden of cell piece and split And internal impurity and defect information, and it is easy to observation.Fig. 3 is the 3-D view that lower surface has the hidden cell piece split, in figure Can clearly find out there are the bright lines of two intersections on cell piece lower surface, it is distinguishable go out the hidden position split and concrete shape, Fig. 4 is There is the 3-D view of the hidden cell piece split inside, also it can be clearly seen that its concrete shape and position in figure.Fig. 5 is to have inside The 3-D view of the cell piece of impurity, it can be clearly seen that positioned at an impurity defect of inside battery.If inside battery It should be transparent sightless on image for uniform silicon medium, but speck occur in inside battery, illustrate that light occurs at speck Scattering, it was demonstrated that be not uniform silicon medium herein.
2nd, the detection to cell piece thickness, warped degree and battery grid is realized
It will be clear that two surfaces up and down of solar cell from Fig. 1, and transparent characteristic is shown inside silicon chip, therefore The gate line electrode on surface and the situation of its evaporation can be directly observed, disconnected grid situation is determined whether.According to the ginseng set by scanning The refractive index of number and solar cell in infrared band, it can be deduced that the thickness of solar cell, while can obtain adjacent two grid lines The spacing of electrode, and width and height per strip electrode.The upper and lower surface position of silicon chip can be found by border differential operator, Then height value h1 of the silicon chip on 3-D view is drawn according to pixel size, then again by silicon chip infrared band refractive index N obtains thickness h=h1/n of silicon chip.Further according to silicon wafer thickness and passing ratio chi, it can be deduced that the spacing of adjacent gate line electrode, And the height and width of every gate line electrode, so as to preferably judge the evaporation situation of its electrode.
The median plane maximum normal distance difference of silicon chip different zones in the horizontal direction is defined as warped degree, according to the upper of silicon chip Lower surface position can obtain its median plane position, and the maximum then tried to achieve according to pixel between different zones median plane in the horizontal direction is hung down Straight distance.The OCT image of silicon chip two diverse locations in the horizontal direction is illustrated in figure 6, its median plane is respectively H1 and H2, H1 Distance with H2 is 13 pixels, and each pixel spot size is 5 microns, then warped degree is Shu H1-H2 Shu=65 micron.
3rd, the detection that light ability is fallen into cell piece is realized
The light intensity signal on cell piece surface is directly proportional to the rear orientation light of detected cell piece in 3-D view, and dissipates backward The sunken light ability for penetrating light and cell piece is inversely proportional, therefore its sunken light ability can be evaluated by cell piece upper surface light intensity value.
The production stage of crystal-silicon solar cell mainly includes:Cleaning and texturing, diffusion, etching edge, antireflective coating Deposition, electrode evaporation.Its technique purpose is the reflectivity for reducing cell piece surface, and enhancing falls into light ability, so as to improve battery Photoelectric transformation efficiency.Under normal circumstances, larger key step is influenceed to have making herbs into wool and antireflective coating cell piece surface reflectivity Deposition etc..Apparatus of the present invention are installed on battery slice assembly line, the on-line real-time measuremen to cell piece can be achieved, this is such as utilized Invention is scanned online to each stage solar cell semi-finished product, is obtained the light intensity value on different preparatory phase cell piece surfaces, is entered And obtain it and fall into light ability to evaluate the quality of manufacture of solar cells different kinds of process flow.Main operating procedure is as follows:
1)Under same test environment, former silicon chip, making herbs into wool piece, diffusion sheet and evaporation antireflective coating are scanned respectively using detection means Chip afterwards;
2)Obtained OCT 3-D views are subjected to surface in alignment;
3)All A-SCAN in 3-D view are averaged along depth direction, longitudinal one-dimensional average intensity signal is obtained;
4)By step 3)The upper surface light intensity value for obtaining each stage cell piece can be calculated(Light ability is fallen into for characterizing it).As schemed Shown in 7, it is apparent that the sunken light ability difference of different cell pieces, while utilizing detection technique means more ripe at present (Infrared spectrometer)Measure the reflectivity of above-mentioned sample, as shown in figure 8, as seen from the figure, using detection method with it is existing Technical testing result is consistent.Due to the main purpose that different kinds of process flow is handled silicon chip be in order to improve its fall into light ability so as to Battery efficiency is improved, therefore the sunken light ability of each stage cell piece can be detected by detection method to evaluate solar-electricity Pond produces the quality of different kinds of process flow, not only convenient and swift, and reliable results.

Claims (5)

1. a kind of quality determining method of solar battery sheet, it is characterised in that comprise the following steps:
1. cell piece to be measured is scanned using detection means, obtains the OCT 3-D views of cell piece;The detection means bag OCT detecting systems are included, the OCT detecting systems use the nonabsorbable near-infrared light source of silicon chip;
2. gained OCT 3-D views are observed or handled the mass parameter for obtaining cell piece:
(a)Obtain defect, the impurity parameter of cell piece:OCT 3-D views are observed, pure crystalline silicon is transparent in the picture , but defect and impurity can cause scattering or absorb and be rendered as speck or bright line, by directly observe obtain cell piece lack Sunken, impurity parameter;
(b)Obtain thickness, warped degree and the battery grid parameter of cell piece:The upper following table of cell piece is observed by OCT 3-D views Face structure, directly obtains cell piece surface evaporation and grid situation of breaking;
The upper and lower surface position of silicon chip is obtained by border differential operator, and silicon chip is obtained on OCT 3-D views according to pixel Height value h1, then thickness h=h1/n of silicon chip is obtained by silicon chip in the refractive index n of infrared band, according to the thickness of silicon chip and led to Cross engineer's scale and obtain the spacing of adjacent two gate line electrodes and the width of every gate line electrode and height;
Its median plane position is obtained according to the upper and lower surface position of silicon chip, then tried to achieve according to pixel in different zones in the horizontal direction Maximum normal distance between heart face is the warped degree of cell piece;
(c)Obtain cell piece and fall into luminous energy force parameter:The OCT 3-D views of cell piece are averaged along depth direction, indulged To one-dimensional average intensity values, the sunken light ability of cell piece, cell piece upper surface are characterized with the light intensity value of cell piece upper surface Light intensity value and the sunken light ability of cell piece be inversely proportional.
2. the quality determining method of solar battery sheet according to claim 1, it is characterised in that the acquisition cell piece Defect parameters include obtaining the surface of cell piece and internal hidden split situation information.
3. the quality determining method of solar battery sheet according to claim 1, it is characterised in that fallen into detection cell piece During light ability, the chip after former silicon chip, making herbs into wool piece, diffusion sheet and evaporation antireflective coating is detected, different process rank is obtained The sunken light ability of the cell piece of section.
4. a kind of quality detection device of solar battery sheet, it is characterised in that the detection means include OCT measuring probes, OCT integrated systems and computer;
The OCT measuring probes are connected with OCT integrated systems, and OCT measuring probes are comprising self-focusing scanning lens and use silicon chip Nonabsorbable near-infrared light source, OCT measuring probes are used to carry out laser scanning to cell piece;
The OCT integrated systems are connected with OCT measuring probes and computer respectively, incoming via OCT measuring probes for gathering Cell piece rear scattered light, and obtained interference light signal is converted into electric signal transmission to computer;
Electric signal progress of the computer to input handles the scan image for obtaining cell piece, and image is handled The quality parameter information of cell piece.
5. the quality detection device of solar battery sheet according to claim 4, it is characterised in that the detection means peace Loaded on battery slice assembly line, on-line real-time measuremen is carried out to battery tablet quality.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107490584A (en) * 2017-09-16 2017-12-19 河北工业大学 A kind of disconnected grid defect inspection method of solar battery sheet EL tests
CN107607548A (en) * 2017-09-29 2018-01-19 青海黄河上游水电开发有限责任公司光伏产业技术分公司 The hidden method for splitting defect of photovoltaic module is detected by 3-D view
CN107749057A (en) * 2017-09-16 2018-03-02 河北工业大学 A kind of method of solar battery sheet outward appearance spillage defects detection
CN108319026A (en) * 2018-03-14 2018-07-24 湖北三江航天江北机械工程有限公司 Industrial rubber film is mingled with detection viewbox and detection method
CN109458937A (en) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 Measure method, apparatus, system and the storage medium of grid line height and width
CN110031474A (en) * 2019-04-28 2019-07-19 无锡先导智能装备股份有限公司 Foreign matter detecting method and detection device for foreign matter
CN111860705A (en) * 2019-04-29 2020-10-30 北京铂阳顶荣光伏科技有限公司 Detection method and system for solar cell
CN113192857A (en) * 2021-04-20 2021-07-30 山西潞安太阳能科技有限责任公司 Method for judging failure of crystalline silicon solar cell
CN113884016A (en) * 2021-06-16 2022-01-04 成都新锐科技发展有限责任公司 Battery piece warping degree detection method
CN114441551A (en) * 2022-02-10 2022-05-06 南京航空航天大学 System and method for detecting strain and defect of battery piece

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1128131A (en) * 1994-10-05 1996-08-07 卡尔蔡斯公司 Optical coherence tomography corneal mapping apparatus
EP1077360A1 (en) * 1998-03-06 2001-02-21 Optical Coherence Technologies, Inc. Optical coherent tomography apparatus, fiberoptic lateral scanner and method for studying biological tissues in vivo
CN1875242A (en) * 2003-10-27 2006-12-06 通用医疗公司 Method and apparatus for performing optical imaging using frequency-domain interferometry
CN101526483A (en) * 2009-04-13 2009-09-09 电子科技大学 Method for nondestructive examination by photoacoustic interference imaging
CN101614676A (en) * 2009-07-29 2009-12-30 常州天合光能有限公司 Defects of battery plate of solar energy photovoltaic subassembly detection method and detector

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1128131A (en) * 1994-10-05 1996-08-07 卡尔蔡斯公司 Optical coherence tomography corneal mapping apparatus
EP1077360A1 (en) * 1998-03-06 2001-02-21 Optical Coherence Technologies, Inc. Optical coherent tomography apparatus, fiberoptic lateral scanner and method for studying biological tissues in vivo
CN1875242A (en) * 2003-10-27 2006-12-06 通用医疗公司 Method and apparatus for performing optical imaging using frequency-domain interferometry
CN103293126A (en) * 2003-10-27 2013-09-11 通用医疗公司 Method and apparatus for performing optical imaging using frequency-domain interferometry
CN101526483A (en) * 2009-04-13 2009-09-09 电子科技大学 Method for nondestructive examination by photoacoustic interference imaging
CN101614676A (en) * 2009-07-29 2009-12-30 常州天合光能有限公司 Defects of battery plate of solar energy photovoltaic subassembly detection method and detector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LARS THRANE 等: "Application of optical coherence tomography (OCT) as a 3-dimensional imaging technique for roll-to-roll coated polymer solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN107490584A (en) * 2017-09-16 2017-12-19 河北工业大学 A kind of disconnected grid defect inspection method of solar battery sheet EL tests
CN107749057A (en) * 2017-09-16 2018-03-02 河北工业大学 A kind of method of solar battery sheet outward appearance spillage defects detection
CN107490584B (en) * 2017-09-16 2020-06-09 河北工业大学 Solar cell EL test broken grid defect detection method
CN107607548A (en) * 2017-09-29 2018-01-19 青海黄河上游水电开发有限责任公司光伏产业技术分公司 The hidden method for splitting defect of photovoltaic module is detected by 3-D view
CN108319026A (en) * 2018-03-14 2018-07-24 湖北三江航天江北机械工程有限公司 Industrial rubber film is mingled with detection viewbox and detection method
CN108319026B (en) * 2018-03-14 2020-08-04 湖北三江航天江北机械工程有限公司 Film viewing lamp for industrial rubber film inclusion detection and detection method
CN109458937A (en) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 Measure method, apparatus, system and the storage medium of grid line height and width
CN110031474A (en) * 2019-04-28 2019-07-19 无锡先导智能装备股份有限公司 Foreign matter detecting method and detection device for foreign matter
CN111860705A (en) * 2019-04-29 2020-10-30 北京铂阳顶荣光伏科技有限公司 Detection method and system for solar cell
CN113192857A (en) * 2021-04-20 2021-07-30 山西潞安太阳能科技有限责任公司 Method for judging failure of crystalline silicon solar cell
CN113192857B (en) * 2021-04-20 2023-05-12 山西潞安太阳能科技有限责任公司 Method for judging failure of crystalline silicon solar cell
CN113884016A (en) * 2021-06-16 2022-01-04 成都新锐科技发展有限责任公司 Battery piece warping degree detection method
CN113884016B (en) * 2021-06-16 2024-02-13 成都新锐科技发展有限责任公司 Method for detecting warping degree of battery piece
CN114441551A (en) * 2022-02-10 2022-05-06 南京航空航天大学 System and method for detecting strain and defect of battery piece

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