CN113186543A - Post-chemical mechanical polishing cleaning solution and preparation method thereof - Google Patents
Post-chemical mechanical polishing cleaning solution and preparation method thereof Download PDFInfo
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- CN113186543A CN113186543A CN202110459996.2A CN202110459996A CN113186543A CN 113186543 A CN113186543 A CN 113186543A CN 202110459996 A CN202110459996 A CN 202110459996A CN 113186543 A CN113186543 A CN 113186543A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
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Abstract
The invention discloses a post-chemical mechanical polishing cleaning solution and a preparation method thereof. Specifically discloses a cleaning solution, which comprises the following raw materials in parts by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 28.9 to 89.9 percent of water, wherein the sum of the mass fractions of the components is 100 percent; the copper complex is a 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) copper complex. The cleaning solution has the effects of cleaning, corrosion inhibition and BTA removal.
Description
Technical Field
The invention relates to a post-chemical mechanical polishing cleaning solution and a preparation method thereof.
Background
Metal materials such as copper, aluminum, tungsten, etc. are commonly used as conductive line materials in integrated circuits. Chemical Mechanical Polishing (CMP) is a major technique for wafer planarization in the fabrication of devices. The metal chemical mechanical polishing solution generally contains abrasive particles, a complexing agent, a metal corrosion inhibitor, an oxidizing agent, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-coated silicon dioxide, cerium dioxide, titanium dioxide, polymer abrasive particles, and the like. After the metal CMP process, the wafer surface is contaminated with metal ions and abrasive particles themselves in the slurry, which can affect the electrical characteristics of the semiconductor and the reliability of the device. The residues of these metal ions and abrasive particles can affect the flatness of the wafer surface, which can degrade device performance and affect subsequent processing or device operation. Therefore, it is very necessary to remove metal ions, metal corrosion inhibitors and abrasive particles remaining on the wafer surface after the metal CMP process, to improve the hydrophilicity of the cleaned wafer surface, and to reduce surface defects.
In the development process of the cleaning solution after CMP at present, how to consider cleaning, corrosion inhibition and BTA removal is a great technical difficulty in the synergistic development of the cleaning solution, the corrosion inhibition and the BTA removal. The present invention is a technical result obtained in the process of solving this technical problem.
Disclosure of Invention
The invention aims to solve the technical problem that the prior art lacks a post-CMP cleaning solution with cleaning, corrosion inhibition and BTA (BTA removal) effects, so that the invention provides a post-CMP cleaning solution and a preparation method thereof. The cleaning solution has the effects of cleaning, corrosion inhibition and BTA removal.
The present invention mainly solves the above-mentioned problems by the following technical means.
The invention provides a cleaning liquid which comprises the following raw materials in parts by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 28.9 to 89.9 percent of water, wherein the sum of the mass fractions of the components is 100 percent; the copper complex is a 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) copper complex.
Wherein the molecular formula of the copper complex is [ Cu (NO)3)2(C15H13N5)2]In which C is15H13N5Is ligand 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole), and the molecular structural formula is as follows:
wherein the mass fraction of the strong base is preferably 1% to 20%, more preferably 5% to 15%, for example 5% or 15%.
The mass fraction of the alcohol amine is preferably 1% to 10%, more preferably 5% to 8%, for example 8%.
Among them, the mass fraction of the antioxidant is preferably 0.002% to 0.1%, more preferably 0.005% to 0.01%, for example, 0.01%.
The mass fraction of the copper complex is preferably 0.01% to 0.05%, more preferably 0.01% to 0.015%, for example 0.01% or 0.015%.
Wherein the mass fraction of the corrosion inhibitor is preferably 0.1% to 1%, more preferably 0.5% to 0.8%, for example 0.8%.
The mass fraction of the chelating agent is preferably 0.1% to 1%, more preferably 0.3% to 0.9%, for example 0.9%.
Wherein the mass fraction of the surfactant is preferably 0.1% to 1%, more preferably 0.2% to 0.7%, for example 0.7%.
Wherein, the strong base is conventional in the field, preferably one or more of quaternary ammonium base, quaternary phosphonium base and guanidine compound, and more preferably quaternary ammonium base.
The quaternary ammonium base is preferably tetraalkyl quaternary ammonium base and/or quaternary ammonium base having a hydroxyl substituent on the alkyl group, more preferably tetraalkyl quaternary ammonium base.
The tetraalkyl quaternary ammonium hydroxide is preferably tetramethyl ammonium hydroxide and/or tetrapropyl ammonium hydroxide, more preferably tetramethyl ammonium hydroxide.
The quaternary ammonium base having a hydroxyl substituent on the alkyl group is preferably one or more of choline, (2-hydroxyethyl) trimethylammonium hydroxide and tris (2-hydroxyethyl) methylammonium hydroxide.
The quaternary phosphonium base is preferably a tetraalkyl quaternary phosphonium base and/or a quaternary phosphonium base having a hydroxyl substituent on the alkyl group.
The tetraalkyl quaternary phosphonium base is preferably tetrabutyl phosphine oxide.
The guanidine compound is preferably tetramethyl guanidine.
Wherein, the alcohol amine is conventional in the field, and is preferably monoethanolamine.
Wherein, the antioxidant is the antioxidant which is conventional in the field, and is preferably ascorbic acid.
Wherein, the corrosion inhibitor is a conventional corrosion inhibitor in the field, and is preferably 2-mercaptobenzothiazole.
Wherein the chelating agent is a conventional chelating agent in the field, and is preferably malonic acid.
Wherein the surfactant is a conventional surfactant in the field, preferably an ionic surfactant or a nonionic surfactant, more preferably a nonionic surfactant, such as dodecylbenzene sulfonic acid.
Preferably, the cleaning solution comprises the following raw materials in percentage by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent.
In a preferred embodiment of the present invention, the raw materials of the cleaning solution may be composed of components shown in any one of the following schemes:
scheme 1: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 2: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 3: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.05 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 4: 5 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 5: 15% of choline, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.1% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water, wherein the balance is the sum of the mass fractions of the components is 100%;
scheme 6: 15% of tetrapropylammonium hydroxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.015% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid, and water, wherein the balance is the sum of the mass fractions of the components is 100%;
scheme 7: 15 percent of (2-hydroxyethyl) trimethyl ammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 8: 15 percent of tris (2-hydroxyethyl) methyl ammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 9: 15% of tetrabutyl hydrogen phosphine oxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.015% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid, and the balance of water, wherein the sum of the mass fractions of the components is 100%;
scheme 10: 15 percent of tetramethylguanidine, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent.
Preferably, the cleaning solution is a cleaning solution for a semiconductor device after chemical mechanical polishing, and the semiconductor device is preferably a copper wafer.
The invention also provides a preparation method of the cleaning solution, which comprises the following steps: and mixing the raw materials of the cleaning solution.
In the preparation method, the mixing is preferably carried out by adding the solid components in the raw material components into the liquid components and uniformly stirring.
In the preparation method, the mixing temperature is preferably room temperature.
In the preparation method, preferably, the mixing further comprises the operations of shaking and filtering, wherein the purpose of shaking is to fully mix the raw material components, and the shaking speed and the shaking time are not limited. Filtration was performed to remove insoluble matter.
In the preparation method, the cleaning solution can be used as a cleaning solution for a semiconductor device after chemical mechanical polishing, and the semiconductor device is preferably a copper wafer.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: provides a post-chemical mechanical polishing cleaning solution and a preparation method thereof. The cleaning solution disclosed by the invention has better cleaning capability, better corrosion inhibition effect, stronger BTA removing capability and better stability, and can realize the effects of cleaning, corrosion inhibition and BTA removing at the same time.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
In the following examples and comparative examples, the cleaning solution was prepared by the following steps: mixing the corresponding raw materials.
In the following examples, the specific operation temperature is not limited, and all the operations are carried out at room temperature.
Preparation of copper complexes
The copper complex is 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) copper complex with a molecular formula of [ Cu (NO)3)2(C15H13N5)2]In which C is15H13N5Is ligand 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole), and the molecular structural formula is as follows:
the copper complex is prepared by the preparation method in patent CN106188103B, and concretely refers to the specific implementation mode part of the patent; the ligand 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) and copper nitrate are used as raw materials, and the reaction molar ratio of the ligand to the copper nitrate is 1: 1. The ligand 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is also prepared by adopting the method in patent CN106188103B, and the copper nitrate is commercially available.
Second, preparation method embodiment of cleaning solution
The raw material components in the table 1 are uniformly mixed according to the mass fraction in the table, and the balance is complemented by water. Wherein, the mixing is generally to add the solid component in the raw material components into the liquid component and stir uniformly. The mixing is generally to add the solid components in the raw material components into the liquid components and stir the mixture evenly. The temperature of the mixing is room temperature. After the mixing, the operation of shaking and filtering is further included. The purpose of shaking is to fully mix the raw material components, and the shaking speed and the shaking time are not limited. Filtration was performed to remove insoluble matter.
In tables 1 and 3 below, the component species in each example also included water.
Table 1 component kinds in examples
In Table 1, A represents a 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) copper complex.
TABLE 2 Mass fractions of the respective raw material components
The "balance" in the table is the mass percentage of 100% minus the other components except water in each example.
Comparative examples 1 to 3
TABLE 3 raw material composition of cleaning solution
TABLE 4 Mass fractions of the respective raw material components
The "balance" in the table is the mass percentage of 100% minus the other components except water in each example.
Effects of the embodiment
Firstly, preparing a copper wafer:
1. pretreatment: for the wafer (copper plating thickness about 1um) after 8 inches of Cu electroplating, 10% H is adopted2SO4Treating at 25 deg.C for 2 min;
2. cleaning with pure water and drying with nitrogen;
secondly, polishing:
the polishing machine is 8' Mirra, the rotating speed of the polishing disk and the polishing head is 93/87rpm, the flow rate of the polishing solution is 150ml/min, the polishing pad used for copper polishing is IC1010, and the polishing pad used for barrier layer polishing is Fujibo H7000. The copper polishing solution was AEP U3000 and the barrier polishing solution was TCU2000H 4. The prepared copper wafer is subjected to a polishing process.
Thirdly, testing:
detection of ER
The test method comprises the following steps:
1. cutting the polished copper wafer into square pieces of 3cm by 3 cm;
2. measuring the thickness of the copper wafer and the functional relation of the resistivity of the copper wafer by adopting a four-point probe instrument to generate a regression curve, and determining the functional relation of the thickness of the copper and the resistivity for calculating the corrosion rate of the copper;
3. soaking 50ml of cleaning solution at 25 ℃ for 1min for corrosion;
4. and measuring the resistance by a four-point probe instrument, then calculating the thickness change of the metal before and after corrosion, and calculating the corrosion rate.
(II) surface corrosion detection
The test method comprises the following steps:
1. cutting the polished copper wafer into square pieces of 3cm by 3 cm;
2. soaking in cleaning solution at 25 deg.C for 1min for corrosion;
3. the copper wafers after etching were subjected to Atomic Force Microscope (AFM) testing and RMS values thereof were measured.
(III) cleaning Capacity detection
The test method comprises the following steps:
1. cutting the polished copper wafer into square pieces of 3cm by 3 cm;
2. soaking and cleaning in cleaning solution at 25 deg.C for 2 min;
3. and (4) observing under an SEM.
(IV) BTA removal capability
The detection method 1:
1. cutting the polished copper wafer into square pieces of 3cm by 3 cm;
2. treating with 3% citric acid at 25 deg.C for 2 min; soaking the copper sheet in 1+1 nitric acid solution for 2min at 25 ℃, and then testing the thickness of the copper by using a surface profiler;
3. cleaning with pure water and drying with nitrogen;
4. Cu-BTA film formation: soaking the treated copper sheet in a 3% hydrogen peroxide solution, 0.5% BTA and 20ppm sulfuric acid solution at 25 ℃ for 10 min;
5. BTA removal: different cleaning solutions are respectively used for soaking the copper sheet with the BTA film (soaking for 1min at 25 ℃), and the thickness is measured by a profilometer to represent the BTA removing effect.
The detection method 2 comprises the following steps:
1. cutting the polished copper wafer into square pieces of 3cm by 3 cm;
2. treating with 3% citric acid at 25 deg.C for 2 min; then testing the contact angle of the deionized water;
3. cleaning with pure water and drying with nitrogen;
4. Cu-BTA film formation: soaking the treated copper sheet in a 3% hydrogen peroxide solution, 0.5% BTA and 20ppm sulfuric acid solution at 25 ℃ for 10 min; testing the contact angle of deionized water;
5. BTA removal: soaking the copper sheet with the BTA film in a cleaning solution (soaking for 2min at 25 ℃), and testing the contact angle of deionized water;
(V) solution stability test
0.4 liter of the cleaning solution was poured into a 0.5L plastic container, the remaining 0.1 liter was filled with nitrogen gas, and the following changes were observed in the placement for 4 days, 7 days, and 1 month:
1. a change in color of the solution;
2. the generation of bubbles;
3. a change in pH;
4. the change of the copper corrosion rate (the detection method is the same as the above);
5. AFM measures changes in surface roughness RMS (as described above).
TABLE 5 Effect of freshly prepared solutions
TABLE 6 Effect of the solutions left for 4 days, 7 days and 1 month (30 days)
As can be seen from the effect comparative examples 1-3 and the effect examples 1-10, the cleaning solution of the present invention has improved performance in various aspects by adding the specific copper complex. The cleaning solution disclosed by the invention has the advantages of low corrosivity, good cleaning effect, strong BTA (BTA removal) capability and good long-acting stability for cleaning a copper wafer after CMP (chemical mechanical polishing).
Claims (10)
1. The cleaning solution is characterized by comprising the following raw materials in percentage by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 28.9 to 89.9 percent of water, wherein the sum of the mass fractions of the components is 100 percent; the copper complex is a 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) copper complex.
2. The cleaning solution as set forth in claim 1, whereinThe molecular formula of the copper complex is [ Cu (NO)3)2(C15H13N5)2]In which C is15H13N5Is ligand 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole), and the molecular structural formula is as follows:
and/or the mass fraction of the strong base is 1-20%;
and/or, the mass fraction of the alcohol amine is 1-10%;
and/or the mass fraction of the antioxidant is 0.002% -0.1%;
and/or the mass fraction of the copper complex is 0.01-0.05%;
and/or the mass fraction of the corrosion inhibitor is 0.1-1%;
and/or the mass fraction of the chelating agent is 0.1-1%;
and/or the mass fraction of the surfactant is 0.1-1%.
3. The cleaning solution as claimed in claim 2, wherein the mass fraction of the strong base is 5% to 15%;
and/or, the mass fraction of the alcohol amine is 5% -8%;
and/or the mass fraction of the antioxidant is 0.005% -0.01%;
and/or the mass fraction of the copper complex is 0.01-0.015%;
and/or the mass fraction of the corrosion inhibitor is 0.5-0.8%;
and/or the mass fraction of the chelating agent is 0.3-0.9%;
and/or the mass fraction of the surfactant is 0.2-0.7%.
4. The cleaning solution as claimed in claim 3, wherein the mass fraction of the strong base is 5% or 15%;
and/or the mass fraction of the alcohol amine is 8 percent;
and/or the mass fraction of the antioxidant is 0.01 percent;
and/or the mass fraction of the copper complex is 0.01% or 0.015%;
and/or the mass fraction of the corrosion inhibitor is 0.8%;
and/or the mass fraction of the chelating agent is 0.9%;
and/or the mass fraction of the surfactant is 0.7%.
5. The cleaning solution according to claim 1, wherein the strong base is one or more of quaternary ammonium base, quaternary phosphonium base and guanidine compound, preferably quaternary ammonium base;
the quaternary ammonium base is preferably tetraalkyl quaternary ammonium base and/or quaternary ammonium base with hydroxyl substituent on alkyl, and more preferably tetraalkyl quaternary ammonium base;
the tetraalkyl quaternary ammonium hydroxide is preferably tetramethyl ammonium hydroxide and/or tetrapropyl ammonium hydroxide, and more preferably tetramethyl ammonium hydroxide;
the quaternary ammonium base with hydroxyl substituent on the alkyl is preferably one or more of choline, (2-hydroxyethyl) trimethyl ammonium hydroxide and tri (2-hydroxyethyl) methyl ammonium hydroxide;
the quaternary phosphonium base is preferably tetraalkyl quaternary phosphonium base and/or quaternary phosphonium base with hydroxyl substituent on the alkyl;
said tetraalkyl quaternary phosphonium base is preferably tetrabutyl phosphine oxide;
the guanidine compound is preferably tetramethyl guanidine.
6. The cleaning solution according to claim 1, wherein the alcohol amine is monoethanolamine;
and/or, the antioxidant is ascorbic acid;
and/or the corrosion inhibitor is 2-mercaptobenzothiazole;
and/or, the chelating agent is malonic acid;
and/or the surfactant is an ionic surfactant or a non-ionic surfactant, preferably a non-ionic surfactant, such as dodecyl benzene sulfonic acid.
7. The cleaning solution according to any one of claims 1 to 6, wherein the cleaning solution comprises the following raw materials in parts by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
preferably, the raw materials of the cleaning solution consist of the components shown in any one of the following schemes:
scheme 1: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 2: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 3: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.05 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 4: 5 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 5: 15% of choline, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.1% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water, wherein the balance is the sum of the mass fractions of the components is 100%;
scheme 6: 15% of tetrapropylammonium hydroxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.015% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid, and water, wherein the balance is the sum of the mass fractions of the components is 100%;
scheme 7: 15 percent of (2-hydroxyethyl) trimethyl ammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 8: 15 percent of tris (2-hydroxyethyl) methyl ammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent;
scheme 9: 15% of tetrabutyl hydrogen phosphine oxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.015% of copper complex, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid, and the balance of water, wherein the sum of the mass fractions of the components is 100%;
scheme 10: 15 percent of tetramethylguanidine, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.015 percent of copper complex, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100 percent.
8. The cleaning solution according to claim 7, wherein the cleaning solution is a cleaning solution for a semiconductor device after chemical mechanical polishing, preferably a copper wafer.
9. A method for preparing a cleaning fluid according to any one of claims 1 to 8, comprising the steps of: and mixing the raw materials.
10. The method according to claim 9, wherein the mixing is performed by adding the solid component of the raw material components to the liquid component and stirring them uniformly;
and/or, the temperature of the mixing is room temperature;
and/or the preparation method further comprises the operations of shaking and filtering.
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