CN113184796A - Micro electro mechanical system device and manufacturing method thereof - Google Patents

Micro electro mechanical system device and manufacturing method thereof Download PDF

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Publication number
CN113184796A
CN113184796A CN202110305625.9A CN202110305625A CN113184796A CN 113184796 A CN113184796 A CN 113184796A CN 202110305625 A CN202110305625 A CN 202110305625A CN 113184796 A CN113184796 A CN 113184796A
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China
Prior art keywords
wafer
electrode
working element
bonding
cavity structure
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CN202110305625.9A
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Chinese (zh)
Inventor
刘文超
魏贤龙
郭等柱
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Peking University Information Technology Institute (tianjin Binhai)
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Peking University Information Technology Institute (tianjin Binhai)
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Priority to CN202110305625.9A priority Critical patent/CN113184796A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00095—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components

Abstract

The invention discloses a micro electro mechanical system device and a manufacturing method thereof. The MEMS device comprises a first wafer, a second wafer, a working element, an electrode and the like. The working element is formed on the first wafer, and the second wafer is bonded with the first wafer; the second wafer is provided with a cavity structure, the working element is positioned in the cavity structure, and the electrode is arranged on the bonding interface in a penetrating way; the electrode is connected to the working element. The manufacturing method comprises the following steps: providing a first wafer and a second wafer with a cavity structure, forming a working element on the first wafer, preparing an electrode connected with the working element on the first wafer, bonding and connecting the second wafer and the first wafer, enabling the electrode to penetrate through a bonding interface of the first wafer and the second wafer, and enabling the working element to be arranged in the cavity structure. The invention ensures that the working element of the micro electro mechanical system device is in a vacuum environment, so that the micro electro mechanical system device has higher sensitivity, accuracy and stability, and the service life of the device is prolonged.

Description

Micro electro mechanical system device and manufacturing method thereof
Technical Field
The invention relates to the technical field of Micro-Electro-Mechanical System (MEMS) devices, and particularly provides a MEMS device and a manufacturing method thereof.
Background
Bonding technology generally refers to a technology for bonding two homogeneous or heterogeneous semiconductor materials into a whole by van der waals force, molecular force or even atomic force after the materials are directly bonded under certain conditions, so the bonding technology is widely applied to micro-electro-mechanical systems. However, due to the technical bottleneck existing in the design of the existing mems device, the conventional mems device manufacturing method or product structure often has the problems of low sensitivity, poor accuracy, poor stability or short service life of the working element, and the like, and thus needs to be solved urgently.
Disclosure of Invention
In order to solve at least one problem in the design of the existing micro electro mechanical system device, the invention can provide the micro electro mechanical system device and the manufacturing method thereof so as to achieve one or more technical purposes of improving the sensitivity, the accuracy, the stability, the service life and the like of a working element in the micro electro mechanical system device.
To achieve the above technical objectives, the present invention can specifically provide a mems device, which can include, but is not limited to, a first wafer, a second wafer, a working element, an electrode, and the like.
And the working element is formed on the first wafer.
A second wafer bonded to the first wafer; wherein the second wafer has a cavity structure, the working element being within the cavity structure.
The electrode penetrates through the bonding interface of the first wafer and the second wafer; the electrode is connected to the working element.
Further, the electrode thickness is less than or equal to 50 nanometers.
Further, the cavity structure is internally provided with vacuum.
Further, the MEMS device further comprises a metal wire.
A wire within the cavity structure; wherein the electrode is electrically connected to the working element through the wire.
Further, the electrode and the working element are electrically connected by means of direct ohmic contact.
Further, the electrode is at least one of a carbon nanotube electrode, a graphene electrode and a metal electrode; namely, the electrode of the invention is made of at least one of the following materials: metal, graphene, carbon nanotubes.
Furthermore, one end of the electrode is electrically connected with the working element, and the other end of the electrode is arranged outside the bonding interface.
Further, the first wafer is at least one of a glass sheet, a silicon wafer, a metal sheet, a ceramic sheet, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer and a glass sheet with a metal layer.
Further, the second wafer is at least one of a glass wafer, a silicon wafer, a metal wafer, a ceramic wafer, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer and a glass wafer with a metal layer.
Further, the bonding connection includes, but is not limited to, at least one of anodic bonding, eutectic bonding, solder bonding, direct bonding, thermocompression bonding, and eutectic bonding.
Further, the MEMS device may be at least one of a microresonator, a micro-gyroscope, a thin film pressure sensor, a radio frequency MEMS device, a vacuum thermal emission device, a vacuum field emission device, or an optical MEMS device, for example.
To achieve the above technical objects, the present invention can also provide a method for manufacturing a mems device, which may include, but is not limited to, at least one of the following steps.
A first wafer and a second wafer having a cavity structure are provided.
Working elements are formed on the first wafer.
Preparing electrodes on the first wafer for connection to the working elements.
And bonding and connecting the second wafer and the first wafer, enabling the electrode to penetrate through a bonding interface of the first wafer and the second wafer, and enabling the working element to be arranged in the cavity structure.
Further, the preparing of the electrode on the first wafer for connection with the working element includes:
and arranging a mark on the surface of the first wafer.
Electrodes for connection to the working elements are formed at the locations of the marks on the first wafer.
Further, the step of arranging the mark on the surface of the first wafer comprises the following steps:
and cleaning the first wafer to remove impurities and/or pollutants on the surface of the first wafer.
And forming marks with concave structures or convex structures on the surface of the first wafer by means of photoetching and/or coating.
Further, the forming of electrodes at locations of the marks on the first wafer for connection to the working elements includes:
and forming an electrode at the position of the mark on the first wafer.
And arranging a metal wire, and enabling two ends of the metal wire to be respectively and electrically connected with the working element and the electrode.
Further, the forming of electrodes at locations of the marks on the first wafer for connection to the working elements includes:
and forming an electrode in ohmic contact with the working element at the position of the mark on the first wafer.
Further, the bonding the second wafer to the first wafer includes:
and connecting the second wafer and the first wafer through anodic bonding or eutectic bonding or welding bonding or direct bonding or thermal compression bonding or eutectic bonding.
Further, the manner of preparing the electrode includes, but is not limited to, one or more of thermal evaporation deposition, magnetron sputtering deposition, electron beam evaporation deposition, and mechanical transfer.
The invention has the beneficial effects that: based on the technical scheme provided by the invention, the working element of the micro electro mechanical system device can be ensured to be in a vacuum environment, so that the micro electro mechanical system device has higher sensitivity, accuracy and stability, and the service life of the device is greatly prolonged. Specifically, the technical scheme provided by the invention can greatly improve the air tightness of the bonding interface of the two wafers penetrated by the electrodes, so that the cavity of the MEMS device has higher vacuum degree, and the sensitivity, the accuracy and the stability of a working element in the cavity of the MEMS device can be further ensured, and the service life is longer.
Drawings
Fig. 1 shows a schematic diagram of a bonded three-dimensional structure of two wafers with electrodes extending therethrough in one or more embodiments of the invention.
Fig. 2 is a schematic cross-sectional elevation view of an electrode and working element electrically connected by a wire in one or more embodiments of the invention.
FIG. 3 illustrates a schematic cross-sectional view of a front view of an electrode and working element in direct ohmic contact in one or more embodiments of the invention.
Fig. 4 is a cross-sectional side view of a first wafer bonded to a second wafer in accordance with one or more embodiments of the present invention.
Fig. 5 shows a schematic flow diagram for preparing a carbon nanotube (carbon tube) electrode in one or more embodiments of the invention.
In the figure, the position of the upper end of the main shaft,
100. a first wafer.
200. A second wafer.
201. And (4) a cavity structure.
202. A gap.
300. And an electrode.
400. A working element.
500. A wire.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It is to be understood that such description is merely illustrative and not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Various structural schematics according to embodiments of the present invention are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present invention, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
As shown in fig. 1 to 5, one or more embodiments of the present invention can specifically provide a mems device and a method for manufacturing the same, wherein the method for manufacturing the device can include, but is not limited to, one or more of the following steps.
Two wafers to be subjected to a bonding process are provided, specifically a first wafer 100 and a second wafer 200 having a cavity structure 201, which cavity structure 201 may be, for example, at a lower surface of the second wafer 200. The first wafer 100 according to the embodiment of the present invention may be, for example, but not limited to, at least one of a glass sheet, a silicon wafer, a metal sheet, a ceramic sheet, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer, and a glass sheet with a metal layer.
The present invention forms the working elements 400 on the first wafer 100 as a matter of design, for example, the working elements 400 may be fabricated on the upper surface of the substrate of the first wafer 100.
The electrode 300 for connecting to the working element 400 is prepared on the first wafer 100, for example, the electrode 300 is prepared on the upper surface of the first wafer 100, and the thickness of the electrode 300 can be made less than or equal to 50 nm. Preparing the electrode 300 on the first wafer 100 for connection to the working element 400 in one or more embodiments of the invention includes: marks are provided on the surface of the first wafer 100, and electrodes 300 for connection to the working elements 400 are formed at the positions of the marks on the first wafer 100. Specifically, the way of preparing the electrode according to the present invention includes, but is not limited to, one or more of thermal evaporation deposition, magnetron sputtering deposition, electron beam evaporation deposition, and mechanical transfer. The electrode 300 in the present invention is, for example, at least one of a carbon nanotube electrode and a graphene electrode.
As shown in fig. 5, more specifically, the step of providing the mark on the surface of the first wafer 100 includes: the first wafer 100 is cleaned using a solution, which may include, but is not limited to, water, ethanol, etc., to remove impurities and/or contaminants from the surface of the first wafer 100. The mark having a concave structure or a convex structure is formed on the surface of the first wafer 100 by photolithography and/or plating, for example, a groove mark having a concave structure or a middle convex mark with two concave sides can be formed by photolithography, or a convex mark or a concave mark surrounded by two vertical bars can be formed by plating, but the invention is not limited thereto.
As shown in FIG. 2, some embodiments of the invention form electrodes 300 at the locations of the marks on the first wafer 100 for connection to the working elements 400 including, but not limited to: forming an electrode 300 at a location of the mark on the first wafer 100; and at least one wire 500 may be provided and both ends of the wire 500 are electrically connected to the working element 400 and the electrode 300, respectively. That is, some embodiments of the present invention complete the electrical connection of electrode 300 to working element 400 through wire 500.
As shown in FIG. 3, other embodiments of the present invention for forming electrodes 300 for connection to working elements 400 at the locations of the marks on the first wafer 100 include: electrodes 300 are formed in ohmic contact with the working elements 400 at the locations of the marks on the first wafer 100. More specifically, the present invention lays the carbon nanotubes on the marked substrate, and makes them as dense and uniform as possible, without skewing, and one end of the carbon nanotubes has good ohmic contact with the working element 400, and can drip water or alcohol and other solvents on the first wafer 100 substrate after the laying is completed, so as to make the carbon nanotubes adhere to the substrate more firmly, and finally form the electrode 300 made of carbon nanotubes and directly connected with the working element 400.
As shown in fig. 1, 2 and 3, the first wafer 100 and the second wafer 200 can be bonded integrally by bonding and connecting the second wafer 200 and the first wafer 100. And the electrode 300 is penetrated on the bonding interface of the first wafer 100 and the second wafer 200, and the working element 400 is disposed in the cavity structure 201, wherein the cavity structure 201 is vacuum. Specifically, the bonding connection mode of the present invention may include, but is not limited to, at least one of anodic bonding, eutectic bonding, solder bonding, direct bonding, thermocompression bonding, and eutectic bonding, for example. The second wafer 200 according to the embodiment of the present invention may be, for example, but not limited to, at least one of a glass sheet, a silicon wafer, a metal sheet, a ceramic sheet, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer, and a glass sheet with a metal layer.
As shown in fig. 1 to 4, one or more embodiments of the invention can provide a mems device, which can include, but is not limited to, a first wafer 100, a second wafer 200, an electrode 300, a working element 400, and the like.
The first wafer 100 may be, for example, but not limited to, at least one of a glass sheet, a silicon wafer, a metal sheet, a ceramic sheet, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer, and a glass sheet with a metal layer.
The second wafer 200 may be, for example, but not limited to, at least one of a glass sheet, a silicon wafer, a metal sheet, a ceramic sheet, a silicon wafer with a silicon oxide layer, a silicon wafer with a metal layer, and a glass sheet with a metal layer. The second wafer 200 has a cavity structure 201, and the cavity structure 201 may be located on a lower surface of the second wafer 200, for example. The chamber structure 201 in some embodiments of the present invention can be understood as a cavity defined by the body of the second wafer 200, and a vacuum is provided in the chamber structure 201. In one or more embodiments of the present invention, the second wafer 200 is bonded to the first wafer 100, that is, the second wafer 200 and the first wafer 100 can be integrally connected through a wafer bonding process. The bonding connection may specifically include, but is not limited to, at least one of anodic bonding, eutectic bonding, solder bonding, direct bonding, thermocompression bonding, eutectic bonding.
The working element 400 is formed on the first wafer 100, i.e. the working element 400 can be processed on the first wafer 100 according to the present invention. The working element 400 is within the cavity structure 201. The working element 400 is disposed in a cavity defined by the second wafer 200. It is understood that the working element 400 related to the present invention belongs to a core element for realizing the function of the MEMS device, such as an angle detection element in a micro gyroscope, a pressure detection element in a pressure sensor, and the like.
The electrode 300 is used as a conductive medium and is disposed through the bonding interface between the first wafer 100 and the second wafer 200, one end of the electrode 300 is connected to the working element 400, and the other end is disposed outside the bonding interface. As shown in fig. 4, the gap 202 at the edge of the electrode 300 formed according to the present invention is very small, and the external gas hardly affects the working element 400 in the vacuum environment in the chamber structure 201.
The thickness of the electrode 300 in some preferred embodiments of the present invention is less than or equal to 50nm, and the gap 202 at the edge of the electrode 300 can be further reduced based on the electrode 300 with smaller thickness, and the following table shows the comparative test results of device leakage rates of 300nm gold/titanium electrode and 50nm gold/titanium electrode respectively by helium mass spectrometer leak detector. Compared with a metal electrode with larger thickness, the MEMS device has better air tightness by reducing the thickness of the electrode, and the leakage rate is greatly reduced.
Electrode for electrochemical cell 300nm gold/titanium electrode 50nm gold/titanium electrode
Leak rate (Pa · m)3/s) 10-8 10-11
The electrode 300 of the present invention may be made of the following materials: carbon nanotubes, graphene, or metal, etc., so the electrode 300 may be at least one of a carbon nanotube electrode, a graphene electrode, and a metal electrode. In some preferred embodiments of the present invention, the electrode 300 is a carbon nanotube electrode, and the electrode 300 made of carbon nanotubes can further reduce the gap 202 at the edge of the electrode 300, and the following table shows the results of comparative testing of device leakage rates of 300nm gold/titanium electrode and 300nm carbon nanotube electrode by a helium mass spectrometer leak detector. Compared with the electrode made of the conventional material, the MEMS device has better air tightness by using the new material (the electrode made of the carbon nano tube) in the technical scheme of the invention, and the leakage rate can be greatly reduced.
Electrode for electrochemical cell 300nm gold/titanium electrode 300nm carbon nanotube electrode
Leak rate (Pa · m)3/s) 10-8 10-11
In addition, the present invention can prepare the electrode 300 by thermal evaporation deposition, magnetron sputtering deposition, electron beam evaporation deposition, mechanical transfer, or the like.
As shown in fig. 2, a device structure in some embodiments of the invention may have a wire 500 therein. The wire 500 is within the lumen structure 201 and the electrode 300 is electrically connected to the working element 400 through the wire 500. Specifically, the two ends of the wire 500 may be electrically connected to the working element 400 and the electrode 300, respectively, and it can be seen that one or more embodiments of the present invention can implement the wire connection of the electrode 300 and the working element 400 by means of wire bonding.
In other embodiments of the present invention, as shown in FIG. 3, the electrode 300 and the working element 400 may be electrically connected by direct ohmic contact.
It should be understood that the MEMS device formed by the present invention may be, for example, one or more of a micro-resonator, a micro-gyroscope, a thin film pressure sensor, a radio frequency MEMS device, a vacuum thermal emission device, a vacuum field emission device, and an optical MEMS device. The invention can carry out vacuum packaging on the MEMS device based on the wafer bonding technology, and particularly bonds the first wafer 100 and the second wafer 200 into a whole under the conditions of certain pressure, temperature, voltage, vacuum degree and the like, thereby forming a closed cavity inside the MEMS device.
In the description herein, references to the description of the term "the present embodiment," "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.

Claims (12)

1. A microelectromechanical systems device, comprising:
a first wafer;
a working element formed on the first wafer;
a second wafer bonded to the first wafer; wherein the second wafer has a cavity structure, the working element being within the cavity structure;
the electrode penetrates through the bonding interface of the first wafer and the second wafer; the electrode is connected to the working element.
2. The MEMS device of claim 1,
the thickness of the electrode is less than or equal to 50 nanometers.
3. The MEMS device of claim 1,
the cavity structure is internally vacuum.
4. The mems device of claim 1 or 2, further comprising:
a wire within the cavity structure; wherein the electrode is electrically connected to the working element through the wire.
5. The MEMS device of claim 1 or 2,
the electrode is electrically connected with the working element by means of ohmic contact.
6. The MEMS device of claim 1 or 2,
the electrode is at least one of a carbon nanotube electrode, a graphene electrode and a metal electrode.
7. A method of manufacturing a microelectromechanical systems device, comprising:
providing a first wafer and a second wafer with a cavity structure;
forming a working element on the first wafer;
preparing electrodes on the first wafer for connection to the working elements;
and bonding and connecting the second wafer and the first wafer, enabling the electrode to penetrate through a bonding interface of the first wafer and the second wafer, and enabling the working element to be arranged in the cavity structure.
8. The method of manufacturing a mems device of claim 7, wherein preparing the electrode on the first wafer for connection to the working element comprises:
setting a mark on the surface of the first wafer;
electrodes for connection to the working elements are formed at the locations of the marks on the first wafer.
9. The method of manufacturing a mems device as recited in claim 8, wherein the marking the first wafer surface comprises:
cleaning the first wafer to remove impurities and/or contaminants on the surface of the first wafer;
and forming marks with concave structures or convex structures on the surface of the first wafer by means of photoetching and/or coating.
10. The method of claim 8 or 9, wherein forming electrodes at the locations of the marks on the first wafer for connection to the working elements comprises:
forming an electrode at the position of the mark on the first wafer;
and arranging a metal wire, and enabling two ends of the metal wire to be respectively and electrically connected with the working element and the electrode.
11. The method of claim 8 or 9, wherein forming electrodes at the locations of the marks on the first wafer for connection to the working elements comprises:
and forming an electrode in ohmic contact with the working element at the position of the mark on the first wafer.
12. The method of manufacturing a microelectromechanical systems device of claim 7, wherein the bonding the second wafer to the first wafer comprises:
and connecting the second wafer and the first wafer through anodic bonding or eutectic bonding or welding bonding or direct bonding or thermal compression bonding or eutectic bonding.
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