CN1131807A - 具有储能电路的故障电流保护开关 - Google Patents
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Abstract
故障电流保护开关,其由一总变流器(1)获得的释放机构(8)的释放信号经一个储能电路(4)得到输送,其中,总变流器(1)具有为待保护导体而设的初级线圈(2)和至少一个用于输出释放信号的次级绕组(3),其中规定,总变流器(1)包括一种磁心材料。
Description
本发明涉及一种故障电流保护开关,其由一总变流器获得的释放机构的释放信号经一个储能电路得到输送,其中,总变流器具有为待保护导体而设的初级线圈和至少一个用于输出释放信号的次级绕组。
故障电流保护开关中的一个储能电路把小的、由总变流器获得的释放信号装入一个存储器,直至一个附属的释放阀使存储器经一个释放机构泄放为止。释放机构可导致一个开关锁脱扣并可导致待保护导体中的或相联的负载中的开关触点断开。这种故障电流保护开关曾以各种不同的结构形式公开(DE-A-3 129 277,DE-A-2 540 815)。
在故障电流保护开关中,人们目前所谋求的是:故障电流保护开关不仅对交流故障电流敏感,而且对脉动故障电流也敏感。对此,具有平直特性曲线的磁心材料,即所谓F-材料是适宜的(EP-B-0 084 814,图2)。
本发明的目的在于进一步开发开头所述类型的故障电流保护开关,使其对具有平滑直流成分的故障电流尽量不敏感。
本发明的上述目的是这样实现的,即提供一种如权利要求1所描述的故障电流保护开关。
总变流器由一种磁心材料构成,在峰值场强Hs为4mA/cm的情况下,在空载时以50Hz的交流电压测出的、该磁心材料的相对磁导率称为磁导率μ4,并在+25℃时遵循如下关系:μ4≥130000。当峰值场强Hs在4mA/cm和40mA/cm之间时,该磁心材料的相对磁导率μr处在一个最大值μrmax和一个最小值μrmin之间,以空载为衡量基准,这两个值遵循的关系为μrmax/μrmin≤1.2。
一个具有这种磁心材料的总变流器给出故障电流保护开关,这种故障电流保护开关在有交流故障电流、脉动故障电流和带直流成分的故障电流时释放并且对有平滑的直流故障电流叠加直至直流覆盖部分的释放极限是不敏感的,即在其释放中不受干扰性损害,因此称为交直流兼容的故障电流保护开关。
按照权利要求2所述的一个实施形式,得到一个特殊的F-材料。其中,最大磁感应强度Bmax和静态剩磁感应强度Brstat之间的静态差感△Bstat与在峰值场强Hs为40mA/cm时用全波整流的交流电测出的动态差感△Bdyn之比满足如下关系:△Bstat/△Bdyn≤1.1。交流时的磁感应强度Bw与用半波整流的交流电测出的静态差感△Bstat之比在峰值场强Hs为40mA/cm时遵循如下关系:Bw/△Bstat≤1.2。一个装有这种磁心材料的故障电流保护开关能损耗很小地检测脉动直流故障电流并从而能使交流故障电流和脉动的故障电流具有很一致的释放区(Auslsebereiche)。
按照权利要求3所述的本发明的另一实施形式,一个储能电路的存储电容器设在一个整流电路的输出端,在总变流器的次级绕组被纳入的情况下,在整流电路的输入端存在一个对频率的谐振匹配(Resonanzanpassung),该频率在次级绕组中被一个在总变流器的初级线圈中流动的、脉动的直流故障电流所感应。此外,在温度为+25℃时的磁导率μ4,即μ4(+25)、温度为-25℃时的磁导率μ4,即μ4(-25)和温度为+85℃时的磁导率μ4,即μ4(+85)之间存在如下关系:
0.85≤μ4(+25)/μ4(-25)≤1.1和
0.85≤μ4(+25)/μ4(+85)≤1.1。
权利要求3所述的故障电流保护开关用谐振匹配放大释放信号并确保释放值具有充分的温度恒定性,这些释放值本来在调谐中在不采取特殊措施的情况下会随温度具有很大的变化。
该故障电流保护开关及其不同的实施形式能采用较小截面的总变流器和较少的匝数。因此可实现这样的故障电流保护开关,这些故障电流保护开关的初级线圈仅为一根贯穿的导线并且次级绕组只有几个线圈。此外,整流装置可设有一个倍压电路,以便进一步升高由总变流器在其次级绕组中获得的释放信号。
下面借助于附图及所示的实施例对本发明作进一步说明:
图1是具有储能电路的故障电路保护开关的原理图,
图2是一个曲线图,其中,横坐标为场强H,纵坐标为一个总变流器的磁心材料的磁感应强度B,
图1所示的故障电流保护开关用一个总变流器1,譬如一个环形磁心工作,一根初级导线作为线圈穿过以上环形磁心并形成初级线圈2或者说初级绕组。次级绕组3带有一个储能电路4,该储能电路4由整流电路5和储能元件6(在实施例中储能元件6是电容器C2)和譬如用一个齐纳二极管作为基准元件的过截继电器7组成。释放机构8可用一个吸持磁铁线圈工作。一个电容器9,即C1可使与总变流器的次级绕组3至少是部分地调谐成为可能,以便加强释放信号。释放信号由总变流器经过整流电路5到达储能元件6。如果过截继电器7的阈值被超过,则储能元件6经过释放机构8释能。
当额定故障电流I△n=30mA,和初级线圈的匝数N1=1时的释放交流故障电流为譬如22.5mA时,典型磁路长度IFe为5至7cm时的场强调制范围约为4至6mA/cm是比较低的。为了在如此低的调制范围的情况下,在22.5mA时取得一个对释放机构8或者对释放电路中的释放电子组件而言足够的、譬如5伏的电压,采用在+25℃时其相对磁导率μ4≥130000的磁心材料是相宜的。
在变流器的截面AFe为0.5至0.7cm2并且做为储能元件6的储能电容器C2的装载电压为譬如5伏时,一个做为整流器5的倍压电路可使次级绕组3具有低的值在1000至2000之间的次级线圈匝数N2。该范围的较小匝数是由电容器9或者说C1的谐振匹配而获得的。
在没有谐振匹配的情况下并在正弦形故障电流时,稳态空载时得到一个感应电压Uind: 当
并且μO=4π×10-7Vs/Am时,则
×130000×4mA/10-2m×0.6×10-4cm2
=2.5V
在有一个倍压电路的情况下,则储能电容器6上可得到5伏电压。
通过一个其μrmax/μrmin≤1.2的、确切地说处于其峰值场强在4mA/cm和40mA/cm之间的场强的范围内的磁心,结合权利要求1的其他特征可在次级线圈比较少的情况下得到一个足够的释放信号。通过一个比较恒定的相对磁导率保障了一种良好的交直流兼容性。
从图2所示的曲线图中,在一个空载时测出的总变流器的磁化曲线上示出了用以作为故障电流保护开关的基础的材料特性参数。较窄的曲线是在空载状态下在交流电压下对磁心材料励磁时得出的。在较宽的、相当于更高的磁化损耗的曲线上记载有全波整流时得出的△Bdyn。在使磁心励磁、经半波整流的交流电压下可在靠内的曲线上得出作为结果的△Bstat。靠外的磁滞曲线又称为动态磁滞曲线11,靠内的磁滞曲线又称为静态磁滞曲线12。通过权利要求2所述的磁心参数可选择出一个特殊的、损耗极小的F-材料,该材料特别适于检测脉动的直流故障电流。按此,当峰值场强Hs为40mA/cm时,Bstat/△Bdyn≤1.1并且Bw/△Bstat≤1.2。
通过要求的谐振匹配,以便在变流器材料具有小的横截面和在尽可能只有一根贯穿导线构成初级绕组并在次级线圈匝数少的情况下得到更高的释放信号,磁导率具有升高的温度变化过程。为了在约-25℃至+85℃这个宽的温度范围内使故障电流保护开关的释放特性尽量保持恒定,磁心的参数应满足权利要求3所述的给定值,即应满足如下关系:
0.85≤μ4(+25)/μ4(-25)≤1.1和
0.85≤μ4(+25)/μ4(+85)≤1.1
在图3中示意出了以上关系,按此,在峰值场强为4至40mA/cm的情况下,给出了μrmax和μrmin之间的相对磁导率μr曲线,其中,μrmax/μrmin≤1.2。结合μ4≥130000这一要求,就给出了一种适宜的磁心材料的相对磁导率曲线。
图1中所用的电容器9与次级绕组3的谐振匹配越强,则相对磁导率的良好恒定性越加重要。
通过权利要求3中的磁心参数考虑了这些关系。
在图4所示曲线中,在横坐标列出了在4到40mA/cm之间的峰值场强,纵坐标为磁感应强度。图中用直线变化记录的特性曲线13说明,在涡流损耗忽略不计的情况下,在换向调制度小时,相对磁导率作为磁导率几乎与动态B-H特性曲线的斜率相当。换言之,当叠加的直流场强为40mA/cm时,可逆磁导率保持恒定。
具有所述磁心参数的故障电流保护开关可后接一个专用于直接故障电流的保护开关,譬如一个相应的DI-保护开关,毋使故障电流保护开关的释放特性受到平滑的直流故障电流的不应有的损害。故障电流保护开关即使在直流故障电流成分增大的情况下仍能可靠地工作,直至专用于直流故障电流的保护开关能承担断开工作为止。在传统的故障电流保护开关中,直流成分增大导致故障电流保护开关不再能可靠地释放,使人们迄今不得不通过一个接在故障电流保护开关之后的万能电子保护开关来承担断开工作。但这种万能电子保护开关不能与电源电压无关地付诸实施。因此,应用一个具有所述磁心参数的与电源电压无关的故障电流保护开关可建立特别有利的保护开关组合。
在设备微调方面,在实践中如此选择,场强为4mA/cm时的磁感应强度B4和场强为40mA/cm时的磁感应强度B40,使上限稍低于下限,即满足Bmax≤1.25Bmin这一关系是相宜的。经济上的可能性会对满足这一要求有所限定。
Claims (3)
1、故障电流保护开关,其由一总变流器(1)获得的释放机构(8)的释放信号经一个储能电路(4)得到输送,其中,总变流器(1)具有为待保护导体而设的初级线圈(2)和至少一个用于输出释放信号的次级绕组(3),其特征在于,
总变流器(1)包括一种磁心材料,
-在峰值场强Hs为4mA/cm的情况下,在空载时以50Hz的交流电压测出的,该磁心材料的相对磁导率μr称为磁导率μ4,并在+25℃时遵循如下关系:
μ4≥130000,
-在峰值场强Hs在4mA/cm和40mA/cm之间时,该磁心材料的相对导磁率μr处在一个最大值μrmax和一个最小值μrmin之间,空载时测得,这两个值遵循的关系为:μrmax/μrmin≤1.2。
2、按照权利要求1所述的故障电流保护开关,其特征在于,
在该磁心材料中,最大磁感应强度Bmax和静态剩磁感应强度Brstat之间的静态差感△Bstat与在峰值场强Hs为40mA/cm时用全波整流的交流电测出的动态差感△Bdyn之比满足如下关系:△Bstat/△Bdyn≤1.1,
交流电时的磁感应Bw与用半波整流的交流电测出的静态差感△Bstat之比在峰值场强Hs为40mA/cm时遵循如下关系:Bw/△Bstat≤1.2。
3、按照权利要求1或2所述的故障电流保护开关,其特征在于,一个储能电路(4)的存储电容器设在一个整流电路(5)的输出端,在总变流器(1)的次级绕组(3)被纳入的情况下,在一个在整流电路(5)的输入端存在一个对频率的谐振匹配,该频率在次级绕组(3)中被一个在总变流器(1)的初级线圈中流动的、脉动的直流故障电流所感应,
在温度为+25℃时的磁导率μ4,即μ4(+25)、温度为-25℃时的磁导率μ4,即μ4(-25)和温度为+85℃时的磁导率μ4,即μ4(+85)之间存在如下关系:
0.85≤μ4(+25)/μ4(-25)≤1.1和
0.85≤μ4(+25)/μ4(+85)≤1.1。
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DE19622409A1 (de) * | 1996-06-04 | 1997-12-11 | Kopp Heinrich Ag | Fehlerstromschutzschalter |
DE19739822A1 (de) * | 1997-09-11 | 1999-03-18 | Abb Patent Gmbh | Fehlerstromschutzschalter |
FR2791631B1 (fr) | 1999-03-31 | 2001-06-15 | Decathlon Sa | Dispositif de fixation d'un accessoire sur un porte-bagage |
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---|---|---|---|---|
DE2540815C2 (de) * | 1975-09-12 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Fehlerstromschutzschalter mit Impulsauslösung |
LU78600A1 (de) * | 1977-11-28 | 1979-06-13 | Gath N | Fehlerstromschutzschalter |
ATA426180A (de) * | 1980-08-21 | 1982-08-15 | Biegelmeier Gottfried | Fehlerstromschutzschalter |
US4366520A (en) * | 1981-03-25 | 1982-12-28 | Magnetic Metals Corporation | Differential transformer core for pulse currents |
DE3202320A1 (de) * | 1982-01-26 | 1983-07-28 | Siemens AG, 1000 Berlin und 8000 München | Fehlerstromschutzschalter, der auf fehlerstroeme mit gleichstromkomponenten anspricht |
-
1994
- 1994-08-16 DE DE4429007A patent/DE4429007A1/de not_active Withdrawn
-
1995
- 1995-08-03 AT AT95112217T patent/ATE197653T1/de not_active IP Right Cessation
- 1995-08-03 ES ES95112217T patent/ES2152350T3/es not_active Expired - Lifetime
- 1995-08-03 DE DE59508855T patent/DE59508855D1/de not_active Expired - Lifetime
- 1995-08-03 EP EP95112217A patent/EP0697704B1/de not_active Expired - Lifetime
- 1995-08-15 CN CN95115088A patent/CN1052104C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104956564A (zh) * | 2013-01-31 | 2015-09-30 | 西门子公司 | 变流器和运行变流器的方法 |
CN104956564B (zh) * | 2013-01-31 | 2017-11-10 | 西门子公司 | 变流器和运行变流器的方法 |
US9859820B2 (en) | 2013-01-31 | 2018-01-02 | Siemens Aktiengesellschaft | Converter and method for operating same |
Also Published As
Publication number | Publication date |
---|---|
DE4429007A1 (de) | 1996-02-22 |
EP0697704A1 (de) | 1996-02-21 |
ATE197653T1 (de) | 2000-12-15 |
ES2152350T3 (es) | 2001-02-01 |
DE59508855D1 (de) | 2000-12-21 |
EP0697704B1 (de) | 2000-11-15 |
CN1052104C (zh) | 2000-05-03 |
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