CN113178500A - Enhanced light photovoltaic module and manufacturing method thereof - Google Patents
Enhanced light photovoltaic module and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000003365 glass fiber Substances 0.000 claims abstract description 44
- 238000004806 packaging method and process Methods 0.000 claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002096 quantum dot Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 164
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 239000004831 Hot glue Substances 0.000 claims description 12
- 238000001723 curing Methods 0.000 claims description 12
- 239000002313 adhesive film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 9
- 238000000016 photochemical curing Methods 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 229920005549 butyl rubber Polymers 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 239000011540 sensing material Substances 0.000 claims description 5
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 239000002518 antifoaming agent Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 229920007925 Ethylene chlorotrifluoroethylene (ECTFE) Polymers 0.000 claims description 2
- -1 ethylene-tetrafluoroethylene Chemical group 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000009941 weaving Methods 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims 2
- 230000008023 solidification Effects 0.000 claims 2
- 229920006129 ethylene fluorinated ethylene propylene Polymers 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 18
- 239000000047 product Substances 0.000 description 9
- 230000003014 reinforcing effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000005022 packaging material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000000306 component Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 208000025274 Lightning injury Diseases 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009459 flexible packaging Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004589 rubber sealant Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an enhanced light photovoltaic module and a manufacturing method thereof, belonging to the technical field of solar photovoltaic, and the enhanced light photovoltaic module is mainly and technically characterized in that: the photovoltaic module is sequentially laminated into a front packaging layer, a first bonding layer, a front bearing layer, a second bonding layer, a blocky photovoltaic cell, a third bonding layer, a rear bearing layer, a fourth bonding layer and a rear packaging layer from an illuminated surface; the front bearing layer is a glass fiber net, conversion materials such as carbon quantum dots or inorganic quantum dots are coated on the front bearing layer, temperature-sensitive materials are coated on the back of the blocky photovoltaic cell, the rear bearing layer is a circuit board, an observation hole is formed in the position, corresponding to the temperature-sensitive materials on the back of the photovoltaic cell, of the temperature-sensitive materials, color changes of the temperature-sensitive materials are observed, an upper electrode plate, a lower electrode plate, a bypass diode, a thermal bimetal switch tube, a switch circuit and a pushing conductive device are arranged in the box body of the junction box, and the quick maintainability, the reliability, the testability and the safety of the solar photovoltaic module are improved.
Description
Technical Field
The invention relates to an enhanced light photovoltaic module and a manufacturing method thereof, belonging to the technical field of solar photovoltaic.
Background
Solar energy is an inexhaustible clean energy, photovoltaic power generation becomes an important green energy, at present, photovoltaic cells are mainly divided into block-shaped crystalline silicon cells and deposited thin film cells, and the crystalline silicon cells and the deposited thin film cells are used as core components of the photovoltaic power generation, and the packaging and protection of solar photovoltaic cells are particularly important, so that the product quality, the safety and the reliability of the solar photovoltaic cells and the service life of the solar photovoltaic cells are directly influenced.
At present, a photovoltaic module mainly comprises rigid packaging and flexible packaging, wherein a solar photovoltaic cell chip is packaged in a sandwich-like structure mainly by toughened glass, a bonding layer and a back plate, and an aluminum alloy frame and a junction box are added to form the rigid photovoltaic module which is safe and reliable, but the rigid photovoltaic module is heavy in size, the surface toughened glass is fragile, easy to break and difficult to carry, and causes great inconvenience in occasions such as camping and tent, and the rigid photovoltaic module is generally mainly used for a ground fixed power station; the flexible photovoltaic module is mainly a thin-film solar photovoltaic cell prepared on a flexible material substrate (stainless steel, polymer and the like), and then the flexible material is used for carrying out sandwich structure packaging, so that the flexible photovoltaic module can be formed. However, the flexible solar photovoltaic cell has high cost and low conversion efficiency, so that the flexible solar photovoltaic cell can only be used in consumer products and special occasions, and large power stations and grid-connected photovoltaic power stations are not popularized and applied due to cost.
In order to have the light advantage of flexible assembly and can overcome the problem that thin film photovoltaic cell's conversion efficiency is low in the flexible assembly again, there are a lot of semi-flexible light photovoltaic module that use crystalline silicon solar cell encapsulation in present army, people's market, the product characteristics are lighter than rigid photovoltaic module weight, the flexible, energy density is high, portable etc., structurally between rigid photovoltaic module and flexible photovoltaic module, conversion efficiency is higher than flexible photovoltaic module, welcome and favor by mobile market and military industry market deeply, but present semi-flexible light photovoltaic module is when pursuing that solar cell is light, gentle, also sacrificed the quality of some products, consequently, there is very big quality defect, it causes the product quality to descend the reason to be mainly: firstly, the crystalline silicon cell is thinner and is more fragile, the chip is cracked and damaged under the action of external force, thereby possibly causing hot spots, particularly the crystalline silicon battery has high current density and potential fire hazard risk, the external force exists in operation, installation, transportation and transportation, and under the constant load of wind pressure change load and snow pressure, the chip of the monocrystalline silicon battery can form subfissure and even break due to overlarge bending and vibration, particularly, a common structure of a semi-flexible photovoltaic module is that a bearing plate is added on the back surface to protect a monocrystalline silicon battery chip from being damaged, and a thinner ETFE and a hot melt adhesive film are used for packaging the front surface in order to improve the transmittance, so that the damage of the impact stress from the front surface to the monocrystalline silicon battery chip is often ignored, such as hail and flying sand stones, to damage the monocrystalline silicon battery chip and cause hot spots to cause fire hazard; secondly, the influence of vapor permeation on the insulation resistance of the semi-flexible photovoltaic module system in the using process causes the safety accident caused by the non-working or electric leakage of the system, even causes the damage of the semi-flexible photovoltaic module caused by lightning stroke, and causes the electric leakage accident as follows: (1) the semi-flexible photovoltaic module is generally fixed by a method of stay cable suspension or support point fixing, each layer of packaging material of the semi-flexible photovoltaic module is repeatedly stressed by wind load, the material of the fixing point is deformed → torn → layered under stress, and water vapor enters the monocrystalline silicon battery chip along gaps to cause packaging failure and reduce insulativity; (2) the semi-flexible photovoltaic module is generally designed without a frame, and each layer of packaging material is corroded by rainwater, wind, snow, salt mist, ultraviolet rays, expansion caused by heat and contraction caused by cold for a long time and damaged by changing load stress, so that the semi-flexible photovoltaic module begins to be layered at the edge, water vapor enters the crystalline silicon battery chip from the edge, packaging failure is caused, and insulativity is reduced; (3) the semi-flexible photovoltaic module is generally packaged by adopting a high polymer material and a hot-melt material, and the damage of the packaging material on the surface causes water vapor to invade the interior of the crystalline silicon cell chip from the edge or the damage position, so that the insulation failure is caused; (4) in the use process of the semi-flexible photovoltaic module, the crystalline silicon cell chip is damaged, or shading of shadow, bird droppings, leaves and the like can cause local hot spots, so that the packaging material is aged → cracked → layered → burnt out at a higher temperature for a long time, and the insulativity is reduced. In view of the above problems, chinese patent publication No.: CN112189264A "photovoltaic module with light weight and flexibility comprising front layer made of polymer and back layer made of composite material" gives partial solution, which improves strength by adding prepreg type composite material based on fiber and additional layer on the back surface, but can not solve external force damage on the front surface; thirdly, the conventional junction box is adopted in the conventional junction box of the solar photovoltaic module, and the conventional junction box has the following defects: (1) once the solar photovoltaic module is damaged or hot spots are generated, a bypass protection diode in the junction box can be conducted for a long time to generate overheating, and potential fire risks are caused; (2) the insulation resistance is possibly reduced due to the local damage of the photovoltaic module, the work of the whole system is influenced, the solar photovoltaic module can only be replaced in the prior art, and the solar photovoltaic module cannot be repaired and used, so that the cost is increased; (3) when the traditional junction box is used for connecting photovoltaic modules in a group and in series, the voltage of the group and the series of the photovoltaic modules exceeds the safe voltage of 36V, even more than 1000V, and an electric shock safety accident can be caused when the traditional junction box is operated in a special occasion; (4) after the traditional junction boxes are connected in series, the voltage exceeds the safe voltage of 36V, once a fire disaster occurs in a photovoltaic power station, the photovoltaic array is a charged body, a fireman cannot extinguish the fire through water, and only can open the fire to see that the power station is burnt, even huge safety accidents can be caused.
Disclosure of Invention
Based on the technical problems of the semi-flexible photovoltaic module, the invention provides the enhanced light photovoltaic module, and aims to improve the impact strength of the semi-flexible photovoltaic module and protect a crystalline silicon battery chip from being damaged; the second purpose is that the hot spot temperature of each battery chip can be detected, the loss caused by the hot spots is avoided, and the damaged component can be quickly and simply maintained and restored, so that the quick maintenance and reliability of the solar photovoltaic component are improved; the third purpose is to quickly insulate and isolate the solar cell units which affect the system safety and eliminate the insulation fault; fourth of purpose is through setting up the inside switch circuit of terminal box, when the conflagration takes place for the group cluster, can turn off photovoltaic module's electric energy output fast, guarantee personnel's safety.
In order to realize the purpose, the invention adopts the technical scheme that: in order to make the positive effectual protection of carrying out of semi-flexible photovoltaic module, do not reduce the loss of solar energy transmissivity simultaneously, at the inside conversion material enhancement layer that increases of packaging material, the enhancement layer has not only increased shock resistance, can also change into visible light with the ultraviolet light that crystalline silicon battery can not absorb and infrared light, absorb by the crystalline silicon battery again under the effect through fluorescence spotlight and light trap, thereby the unit generating efficiency of photovoltaic module has been improved, in addition be equipped with temperature sensing material below every crystalline silicon battery, it has the observation window to open at the backplate, can observe the battery temperature at any time, know which battery probably produces the hot spot, its concrete technical characteristics is as follows: the utility model provides an enhancement mode light photovoltaic module, includes encapsulated layer, bearer layer, tie coat, cubic photovoltaic cell, its characterized in that: the photovoltaic module is sequentially laminated into a front packaging layer, a first bonding layer, a front bearing layer, a second bonding layer, a block battery, a third bonding layer, a rear bearing layer, a fourth bonding layer and a rear packaging layer from an illuminated surface; the rear bearing layer is a glass fiber board printed with a tin-coated tape welding circuit of the photovoltaic cell, and is also called a circuit board; the photovoltaic module also comprises a junction box which is positioned on the back surface of the rear packaging layer, an electric energy outgoing line of the photovoltaic module is led into the junction box from the circuit board, and an output positive electrode and an output negative electrode of the photovoltaic module are led out from the junction box.
The rear bearing layer is a glass fiber board printed with a tin-coated tape welding circuit with a photovoltaic cell on two sides, and is also called a circuit board.
The photovoltaic module further comprises a junction box which is positioned on the back surface of the rear packaging layer, and an electric energy outgoing line of the blocky photovoltaic cell is led into the junction box from the circuit board.
The front and rear encapsulating layers are made of transparent high molecular polymers, such as Polycarbonate (PC), polymethyl methacrylate (PMMA), polyvinylidene fluoride (PVDF), ethylene-tetrafluoroethylene (ETFE), Ethylene Chlorotrifluoroethylene (ECTFE), Fluorinated Ethylene Propylene (FEP), and the like.
The adhesive layer is a hot melt adhesive film layer, such as an EVA adhesive film, a PVB adhesive film, a POE adhesive film or an SGP adhesive film.
The front bearing layer is a glass fiber net which is formed by weaving a plurality of glass fiber yarns with the diameter of 40-60 mu m into 0.5-1.2mm glass fiber ropes, and the meshes of the glass fiber net are between 2 x 2mm and 4 x 4 mm.
The glass fiber net is coated with conversion materials such as carbon quantum dots or inorganic quantum dots, the particles of the conversion materials are 30-50 μm, and ultraviolet light with the wavelength of 300-450nm can be converted into visible light with the wavelength of 300-750 nm.
The blocky photovoltaic cell is a monocrystalline silicon cell or a polycrystalline silicon cell and the like, a temperature-sensitive material is coated on the back surface of the crystalline silicon, and the photovoltaic cells are connected in series through a tin coating band.
The series connection of the blocky photovoltaic cells is divided into a plurality of groups of strings, and each string is led into the junction box to be connected in series after being respectively led out to the circuit board.
The photovoltaic module is characterized in that an upper electrode plate, a lower electrode plate, a bypass diode, a thermal bimetal switch tube, a switch circuit and a pushing conductive device are arranged in the box body of the junction box, each upper electrode plate is respectively connected with the positive electrode and the negative electrode of the photovoltaic battery pack string, the bypass diode and the thermal bimetal switch tube are connected between the lower electrode plates in series, the output positive electrode and the output negative electrode of the photovoltaic module are respectively led out of the lower electrode plates on two sides, the switch circuit is connected between the output positive electrode and the output negative electrode of the module, and the pushing conductive device pushes the upper electrode plate to be connected with the lower electrode plate.
The upper electrode plate consists of a fixed plate and a movable plate which are connected by a tension spring, the fixed plate is fixed on the box body, and the movable plate can move back and forth to be connected with or disconnected from the lower electrode plate.
The conductive pushing device is composed of a flange nut, insulating pushing rods and waterproof rings, the insulating pushing rods are placed in the flange nut, the flange nut presses the waterproof rings to be screwed on the box body, an upper electrode plate corresponding to each insulating pushing rod abuts against the movable plate through a tension spring penetrating through the electrode plates, lower electrode plates on two sides correspond to the upper electrode plates respectively, each lower electrode plate in the middle corresponds to two upper electrode plates with opposite polarities, the insulating pushing rods push the movable plates of the upper electrode plates to be connected with the lower electrode plates, and after the insulating pushing rods are loosened, the movable plates of the upper electrode plates and the lower electrode plates are separated.
The switch circuit comprises a 5V power supply, a single chip microcomputer, an MOS switch tube, a resistor and a Hall sensor, wherein the 5V power supply supplies power to the single chip microcomputer, the output anode of the photovoltaic module penetrates through the Hall sensor, the Hall sensor provides a current signal for the photovoltaic module of the single chip microcomputer, the single chip microcomputer controls the switch of the MOS switch tube after receiving the signal, the collector electrode and the emitter electrode of the MOS switch tube are respectively connected with the anode and the cathode of the photovoltaic module, the resistor is connected between the collector electrode of the MOS switch tube and the anode of the photovoltaic module in series, and the light emitting diode is connected on the 5V power supply in series.
The thickness of the front packaging layer is 20-30 microns, and convex-concave lines are pressed on the outer surface and used for increasing the light absorption area.
The circuit board is provided with an observation hole at the position corresponding to the temperature-sensitive material on the back of the photovoltaic cell to observe the color change of the temperature-sensitive material and judge the temperature of the photovoltaic cell.
The thickness of the first bonding layer and the second bonding layer is between 0.5 and 0.7mm, and the thickness of the third bonding layer and the fourth bonding layer is between 0.2 and 0.4 mm.
Photovoltaic module still include waterproof layer and decorative layer, the waterproof layer is located around between photovoltaic module's the preceding encapsulated layer and the back encapsulated layer, the waterproof layer is like two-sided sealing washer such as butyl rubber, the decorative layer is located the photovoltaic cell clearance department of establishing ties, increases disguise.
The edge of the photovoltaic module is provided with a hole for fixing the photovoltaic modules or connecting the photovoltaic modules with each other.
A manufacturing method of an enhanced light photovoltaic component comprises the following steps: the first step is as follows: stacking the film layers: and the back of the glass fiber plate is sequentially covered with a fourth bonding layer and a rear packaging layer, and the peripheries of the glass fiber plate and the fourth bonding layer are smaller than the edge of the rear packaging layer.
The second step is that: first lamination: and (4) putting the laminated film layer into a laminating machine for first lamination.
The third step: series connection of bulk photovoltaic cells: after the blocky photovoltaic cells are laid, the blocky photovoltaic cells are connected in series into a plurality of strings by using tin-coated tapes in a welding mode.
The fourth step: stacking the film layers: laying a third bonding layer on the front surface of the glass fiber board laminated for the first time, placing the welded blocky photovoltaic cell on the third bonding layer, and welding the two ends of the tin-coated belt on the circuit board after the two ends of the tin-coated belt pass through the third bonding layer; laying a second bonding layer on the blocky photovoltaic cell, then placing the front bearing layer on the second bonding layer, laying a first bonding layer on the front bearing layer, and placing the front packaging layer on the first bonding layer.
The fifth step: and (3) second lamination: and putting the laminated film layer into the laminator again for second lamination.
And a sixth step: and (3) peripheral sealing: and bonding a waterproof layer on the periphery of the laminated assembly between the front packaging layer and the rear packaging layer, and compacting by using a heating roller.
The seventh step: installing a junction box: and (4) installing the junction box outside the rear packaging layer, and connecting wires in the junction box to finish the manufacture of the enhanced light photovoltaic module.
The manufacturing method of the front bearing layer comprises the following steps: the first step is as follows: fully mixing the conversion material with the epoxy resin adhesive, the curing agent and the defoaming agent, stirring at a constant speed of 700-900 rpm for 3-4 minutes by using a stirrer, and then placing the mixture in vacuum equipment to pump out doped air in the stirring process so as to prevent the defect of bubble formation in the curing process, wherein the vacuumizing pressure is-1.5-0.5 MPa, and the vacuumizing time is 2-3 minutes.
The second step is that: uniformly pouring the prepared conversion material into a glue box of a coating machine, placing and installing the glass fiber net on a roller of the coating machine, and uniformly coating front and back at the coating speed of 1.5-2.0 m/min.
The third step: and (3) putting the glass fiber net coated with the conversion material into a tunnel furnace for curing, wherein the speed of the tunnel furnace is consistent with that of the coating machine, the temperature of the tunnel furnace is controlled at 150-175 ℃, and the time is controlled at 22-25 minutes, so as to prepare the front bearing layer.
The manufacturing method of the temperature-sensitive material of the blocky photovoltaic cell comprises the following steps: and (3) silk-screening the temperature control material on the back surface of the photovoltaic cell chip by using a silk-screen printing plate, and carrying out photocuring curing by using a UV photocuring machine at a photocuring speed of 1.5-2.0m/min for 3-4 minutes to obtain the temperature sensing material, wherein the temperature sensing material is printed into a round shape, and the diameter of the temperature sensing material is controlled to be 15-25 mm.
The invention has the following positive beneficial effects: firstly, the upper and lower double-layers of the conversion material reinforcing layer and the glass fiber plate are adopted to enhance the impact strength, the front surface and the back surface are protected, failure, fire and the like caused by damage of a silicon wafer are prevented, meanwhile, the light traps of the conversion material reinforcing layer and the front packaging layer are mutually refracted to form a plane condensation effect, so that the solar cell can fully absorb sunlight, the loss of reflected light is reduced, and the purpose of improving the solar cell is achieved.
The second is provided with the temperature detection function, but direct observation battery piece operating temperature judges whether silicon chip high temperature appears to can directly cut off the fault circuit in the terminal box, cross-over connection to effective circuit, make photovoltaic module continue normal use, it is quick, convenient to handle the trouble, the subassembly high-usage.
And thirdly, the solar battery pack string is independently led out of the junction box, the battery string with faults can be disconnected, and the faults can be rapidly and quickly eliminated.
Fourthly, butyl rubber sealant is added on the peripheral edge of the assembly to enhance the edge sealing performance and prevent the generation of wet leakage current.
Fifthly, the invention can improve the quick maintainability, reliability, testability and safety of the solar cell module by the technology, thereby improving the guarantee of the product.
Drawings
FIG. 1: the structure of the invention is shown in an explosion diagram.
FIG. 2: the invention is a schematic cross-sectional structure.
FIG. 3: the silicon wafer series connection schematic diagram of the invention.
FIG. 4: a schematic front view of the glass fiber sheet of the present invention.
FIG. 5: a reverse schematic view of the glass fiber sheet of the present invention.
FIG. 6: the illumination of the present invention is schematically illustrated.
FIG. 7: the invention discloses a structure schematic diagram of a junction box.
FIG. 8: the product of the invention is shown in a specific application structure.
In the figure, 1, a front packaging layer, 2, a film layer, 3, a conversion material reinforcing layer, 3-1, a light-gathering material, 4, a photovoltaic cell, 4-1, a temperature control material, 4-2, a solder strip, 5, a glass fiber board, 5-1, an observation hole, 5-2, a lead hole, 5-3, a copper-clad lead, 5-4, a copper-clad circuit, 6, a rear packaging layer, 7, a junction box, 701, a movable sheet of an upper electrode sheet, 715, a tension spring, 716, a fixed sheet of the upper electrode sheet, 702, a lower electrode sheet, 703, a hall sensor, 704, a bypass protection diode, 705, a thermal bimetallic switch tube, 706, an insulating push rod, 707, a waterproof ring, 708, a flange nut, 709a, a photovoltaic module positive lead wire, 709b, a photovoltaic module negative lead wire, 710, a singlechip, 711, a resistor, 712, a MOS switch tube, 713, a light-emitting diode, 714. the driving power supply comprises a positive outgoing line and a negative outgoing line of a 5V driving power supply, 715 and 5V driving power supplies, and 8 edge sealing rubber rings.
Detailed Description
The photovoltaic cell 4 of the embodiment adopts 125X125mm monocrystalline silicon wafers, the photovoltaic module comprises 20 silicon wafers, each 5 silicon wafers are in one group and 4 groups, the front packaging layer 1 is 30 μm ETFE, the rear packaging layer 6 is 50 μm ETFE, the first layer and the second layer of hot melt adhesive film layer 2 are 0.54mm EVA, the third layer and the fourth layer of hot melt adhesive film layer 2 are 0.38mm EVA, the diameter of the glass fiber net of the conversion material reinforcing layer 3 is 1.2mm, the mesh is 3 multiplied by 3mm, the upper surface is coated with the light-gathering material 3-1, the thickness of the glass fiber plate 5 is 1.0mm, the glass fiber plate is provided with an observation hole 5-1 and a lead hole 5-2 with the diameter of 20mm, the front surface and the back surface of the lead hole 5-2 of the glass fiber plate 5 are both provided with copper-clad wires 5-3 and are conducted, the back surface of the glass fiber plate 5 is provided with four copper-clad circuits 5-4 which are respectively connected with the back surface of the copper-clad wires 5-3, four series of the welding strips 4 silicon wafers are connected with the copper-, four groups of binding posts are arranged in the junction box 7 and are respectively connected with four groups of battery strings, then the four groups are connected in series, and the edge sealing rubber ring 8 is butyl rubber.
The manufacturing method of the embodiment is as follows: step 1: preparation of the conversion material reinforcement layer 3: fully mixing a carbon quantum dot material, an epoxy resin adhesive, a curing agent and a defoaming agent into a light-gathering material 3-1, stirring at a constant speed of 800 revolutions per minute for 3-4 minutes by using a stirrer, and then placing the light-gathering material in vacuum equipment to pump out doped air in the stirring process so as to prevent the formation of bubble defects in the curing process, wherein the vacuumizing pressure is-1 MPa, and the vacuumizing time is 2-3 minutes; uniformly pouring the prepared fluorescent light-gathering material 3-1 into a glue box of a coating machine, placing and installing the conversion material reinforcing layer 3 on a roller of the coating machine, uniformly coating the conversion material reinforcing layer 3 in front and at back, controlling the coating speed to be about 1.5-2.0m/min, then, feeding the conversion material reinforcing layer 3 coated with the fluorescent light-gathering material into a tunnel furnace for curing, wherein the speed of the tunnel furnace is consistent with that of the coating machine, the temperature of the tunnel furnace is controlled to be 165 ℃, and the time is controlled to be 22-25 minutes. Through the two steps, the conversion material reinforced layer can be manufactured.
Step 2: manufacturing a glass fiber board 5 (circuit board): firstly, a lead hole 5-2 with the diameter of 3mm and a temperature observation hole 5-1 with the diameter of 20mm are formed on the glass fiber board, a copper-clad lead 5-3 and a copper-clad circuit 5-4 are prepared in front and back, and the lead hole 5-2 is connected with the copper-clad circuit 5-4 in front and back.
And 3, step 3: covering with an adhesive film layer 2: cleaning the glass fiber board, and then sequentially covering a fourth hot melt adhesive film layer 2 and a rear packaging layer 6 on the back surface of the glass fiber board 5, wherein the sizes of the glass fiber board 5 and the fourth hot melt adhesive film layer 2 are both smaller than 15mm of the edge of the rear packaging layer 6.
And 4, step 4: first pressing: and placing the semi-finished product covered with the film layer 2 between two layers of Teflon cloth, then placing the semi-finished product in a laminator at 60 ℃ for primary pressing, wherein the laminating time is 6 minutes, the upper cavity is inflated to 1 standard atmospheric pressure, and the lower cavity is vacuumized to-0.7 MPa.
And 5, step 5: laying the photovoltaic cells 4: arranging the photovoltaic cells 4 on a mould, controlling the space between the photovoltaic cells 4 to be 1-1.5mm, then silk-screening the temperature-sensitive materials 4-1 on the back surface of the solar cell 4 by using a silk-screen plate, and then carrying out photocuring curing by using a UV (ultraviolet) curing machine at the photocuring speed of 1.5-2.0m/min for 3.5 minutes to obtain the temperature-sensitive materials 4-1, wherein the printed positions of the temperature-sensitive materials 4-1 are opposite to temperature observation holes 5-1 on a glass fiber plate 5, and the diameter of the temperature-sensitive materials 4-1 is 20 mm.
And 6, step 6: soldering a sheet: the photovoltaic cells 4 are connected in series by using tin-coated tapes 4-2, one group of 5 photovoltaic cells is formed, four groups of photovoltaic cells are formed, a third hot-melt adhesive film layer 2 is laid on a glass fiber board, then each series of photovoltaic cells 4 is transferred to the adhesive film layer 2 on the glass fiber board 5, the solar cell 2 is placed in the middle, the tin-coated tapes are welded on a copper-clad lead 5-3 of the glass fiber board 5, and then the series wires are led to a copper-clad circuit 5-4 on the back side of the glass fiber board 5 through a lead hole 5-2.
And 7, step 7: covering with an adhesive film layer 2: cover second layer hot melt adhesive film layer 2, conversion material enhancement layer 3 and first layer hot melt adhesive film layer 2, preceding encapsulated layer 1 in proper order at 4 tops of photovoltaic cell, second layer hot melt adhesive film layer 2, conversion material enhancement layer 3 and first layer hot melt adhesive film layer 2's size all be less than preceding encapsulated layer 1 edge 15 mm.
And 8, step 8: and (3) laminating: and (3) arranging the half-layer product covered with the film layer between two layers of Teflon high-temperature cloth, wherein the front Teflon cloth is in a pyramid structure, the diameter of each pyramid is 0.2mm, the space between every two pyramids is controlled to be 0.1-0.15 mm, the height of each pyramid is 0.32-0.38mm, an inverted pyramid type light trap can be formed after lamination, and the rear Teflon high-temperature cloth is in a plane structure. Covering with Teflon high temperature cloth, placing the semi-layer product in a laminating machine, setting the laminating temperature to 135 deg.C, laminating for 8 min, inflating the upper chamber to 1 standard atmospheric pressure, and vacuumizing the lower chamber to-0.7 MPa.
Step 10: manufacturing an edge sealing rubber ring 8: uncovering the front packaging layer 1 and the rear packaging layer 6, placing the double-sided adhesive layer of butyl rubber with the width of 15mm in the gap in parallel, compacting by using a heating roller, controlling the speed of the heating roller at 5 m/min, controlling the temperature of the roller at 65 ℃, and controlling the pressure of the roller at 0.5 MPa.
And 11, step 11: installing a junction box 7: and taking the laminated solar cell module out of the laminating machine, trimming by using a blade to form the solar photovoltaic module, and then installing the junction box 7 on the position of a lead hole of the rear packaging layer 6 of the solar photovoltaic module by using structural sealant.
As shown in fig. 7, in the junction box 7 described in this embodiment, there are 8 upper electrode plates, a fixed plate 716 and a movable plate 701 of the upper electrode plate, which are connected by a tension spring 715, 5 lower electrode plates 702, a hall sensor 703, a bypass protection diode 704, a bimetal switch tube 705, 8 insulating push rods 706, a waterproof ring 707, a flange nut 708, a photovoltaic module positive lead 709a, a photovoltaic module negative lead 709b, a single chip microcomputer 710, a resistor 711, a switch tube 712, a light emitting diode 713, and a 5V driving power source 714.
The fixing plate 716 and the lower electrode plate 702 of the upper electrode plate are inserted and connected with the shell of the junction box 7, the bypass protection diode 704 and the bimetallic switch tube 705 are respectively connected in series between 5 lower electrode plates 702, the positive and negative poles of 8 groups of 4 groups of photovoltaic battery strings are respectively connected with 8 upper electrode plates 701, the flange nut 708 presses the waterproof ring 707 and is screwed on the box body, the 8 insulating push rods 706 in the flange nut 708 penetrate through the tension spring 715 to respectively press the movable plates 701 of the 8 upper electrode plates on the 5 lower electrode plates 702, the upper electrode plate of the positive pole of the first string on the left side is pressed on the first lower electrode plate on the leftmost side, the negative pole of the first string and the upper electrode plate of the positive pole of the second string are pressed on the second lower electrode plate, the negative pole of the second string and the upper electrode plate of the positive pole of the third string are pressed on the third lower electrode plate, the negative pole of the third string and the upper electrode plate of the positive pole of the fourth string are pressed on the fourth lower electrode plate, the upper electrode plate voltage of the negative electrode of the fourth string is on the fifth lower electrode plate, the first lower electrode plate leads out the output positive electrode 709a of the photovoltaic module, the fifth lower electrode plate leads out the output negative electrode 709b of the photovoltaic module, the positive lead-out 709a of the photovoltaic module passes through the hall sensor 703, the collector of the MOS switch tube 712 is connected with the output positive electrode 709a of the photovoltaic module, the emitter of the MOS switch tube 712 is connected with the output negative electrode 709b of the photovoltaic module, and a resistor 711 is connected in series between the collector of the MOS switch tube 712 and the output positive electrode 709a as the charge when the MOS switch tube 712 is turned off.
The singlechip 710 is connected with a 5V driving power 714 as a power supply, the Hall sensor 703 is connected with the signal input end of the singlechip 710, and the singlechip 710 controls the switch of the MOS switch tube 712.
As shown in fig. 8, for an actual application case of this embodiment, the positive lead-out line 709a of 16 photovoltaic modules and the negative lead-out line 709b of the adjacent photovoltaic module are connected in series to form a photovoltaic square matrix of 16 groups of strings, and then the positive and negative lead-out lines 714 of the 5V driving power supply are connected in parallel to the 5V driving power supply 715 of the 16 photovoltaic modules of the photovoltaic square matrix.
The specific implementation process for increasing the maintainability, the reliability, the testability, the safety and the supportability of the photovoltaic module is as follows: (1) when the photovoltaic module is installed and connected with the photovoltaic array string, because the photovoltaic module is in an open-circuit state, the Hall sensor 703 in the junction box does not detect current, when the 5V driving power supply 715 is not switched on, the switching circuit single chip microcomputer 710 controls the MOS switching tube 712 to be in a normally-closed state, at the moment, the voltage of the photovoltaic module is zero, the light-emitting diode 713 is extinguished, and the safety of an operator is ensured; when the photovoltaic array is connected to the inverter after the series connection of the photovoltaic module groups is completed, the 5V driving power supply 715 is turned on, at the moment, the single chip microcomputer 710 controls the MOS switch tube 712 to be normally opened from normally closed, the light emitting diode 713 is normally on, the Hall sensor 703 in the junction box 7 detects current, and the photovoltaic module starts to work.
(2) When a fire breaks out, the inverter is immediately turned off, the Hall sensor 703 in the junction box 7 does not detect the current of the photovoltaic module, the Hall sensor 703 sends a signal to the single chip microcomputer 710 to turn off the MOS switch tube 712, the indicator lamp 713 is turned off, the voltage of the solar cell module 4 is zero at the moment, and a fireman can use water to extinguish the fire. Once the fire alarm is released, as long as the inverter is turned on, the hall sensor 703 in the junction box 7 detects the current and sends a signal to the single chip microcomputer 710 to turn on the MOS switch tube 712, the light emitting diode 713 is normally on, and the solar module 4 can normally generate power.
(3) When the photovoltaic module forms hot spots, the bypass protection diode 704 is conducted, the bypass protection diode 704 starts to heat up at the moment, when the temperature reaches 105 ℃, the thermal bimetal switch tube 705 is heated and conducted, at the moment, current does not pass through the bypass protection diode 704 and is connected with other photovoltaic cells 401 in series through the thermal bimetal switch tube 705, when the bypass protection diode 704 is reduced to 90 ℃, the thermal bimetal switch tube 705 is disconnected, at the moment, the photovoltaic cell 401 string generating the hot spots is connected with other photovoltaic cell 4 strings in series, and automatic conduction and disconnection are realized through the thermal bimetal switch tube 705.
(4) When the photovoltaic cell 401 has an insulation fault, and a damaged photovoltaic module is found, the waterproof flange nut 708 for adjusting and pushing the conductive device can be opened, the insulating push rod 706 is taken out, the movable sheet 701 of the upper electrode sheet of the photovoltaic cell 401 string is separated from the lower electrode sheet 702 in the junction box, at the moment, the damaged photovoltaic cell 4 is isolated from the qualified photovoltaic cell 4 string, and the string fault is eliminated.
Claims (18)
1. The utility model provides an enhancement mode light photovoltaic module, includes encapsulated layer, bearer layer, tie coat, cubic photovoltaic cell, its characterized in that: the photovoltaic module is sequentially laminated into a front packaging layer, a first bonding layer, a front bearing layer, a second bonding layer, a blocky photovoltaic cell, a third bonding layer, a rear bearing layer, a fourth bonding layer and a rear packaging layer from an illuminated surface; the front bearing layer is a glass fiber net coated with a conversion material; the rear bearing layer is a glass fiber board with two sides printed with tin-coated tape welding circuits of the photovoltaic cell, and is also called a circuit board; the photovoltaic module also comprises a junction box which is positioned on the back surface of the rear packaging layer, an electric energy outgoing line of the blocky photovoltaic cell is led into the junction box from the circuit board, and an output positive electrode and an output negative electrode of the photovoltaic module are led out from the junction box.
2. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the front and back packaging layers are transparent high molecular polymers of Polycarbonate (PC), polymethyl methacrylate (PMMA), polyvinylidene fluoride (PVDF), ethylene-tetrafluoroethylene (ETFE), Ethylene Chlorotrifluoroethylene (ECTFE) or Fluorinated Ethylene Propylene (FEP); the adhesive layer is a hot melt adhesive film layer of an EVA adhesive film, a PVB adhesive film, a POE adhesive film or an SGP adhesive film.
3. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the glass fiber net is formed by weaving a plurality of glass fiber yarns with the diameter of 40-60 mu m into 0.5-1.2mm glass fiber ropes, and the meshes of the glass fiber net are between 2 x 2mm and 4 x 4 mm.
4. An enhanced light photovoltaic module as claimed in claim 1 or 3, characterized in that: the conversion material of the glass fiber net is carbon quantum dots or inorganic quantum dots, the particles of the conversion material are 30-50 μm, and the ultraviolet light with the wavelength of 300-450nm can be converted into the visible light with the wavelength of 300-750 nm.
5. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the blocky photovoltaic cell is a monocrystalline silicon cell or a polycrystalline silicon cell, the back of the crystalline silicon cell is coated with a temperature sensing material, and the photovoltaic cells are connected in series through a tin coating band.
6. An enhanced light weight photovoltaic module as recited by claim 5, wherein: the series connection of the blocky photovoltaic cells is divided into a plurality of groups of strings, and each string is led into the junction box after being respectively led out to the circuit board.
7. An enhanced light photovoltaic module as recited in claim 1 or 6, characterized by: the box body of the junction box is internally provided with an upper electrode plate, lower electrode plates, a bypass diode, a thermal bimetal switch tube, a switch circuit and a pushing conductive device, wherein each upper electrode plate is respectively connected with the positive electrode and the negative electrode of a photovoltaic battery pack string, the bypass diode and the thermal bimetal switch tube are connected between the lower electrode plates in series, the output positive electrode and the output negative electrode of the photovoltaic module are respectively led out from the lower electrode plates at two sides, the switch circuit is connected between the output positive electrode and the output negative electrode of the module, and the pushing conductive device pushes the upper electrode plates to be connected with the lower electrode plates.
8. An enhanced light weight photovoltaic module as recited by claim 7, wherein: the switching circuit comprises a 5V power supply, a single chip microcomputer, an MOS switching tube, a resistor and a Hall sensor, wherein the 5V power supply supplies power to the single chip microcomputer, the output anode of the photovoltaic module penetrates through the Hall sensor, the Hall sensor provides a current signal for the photovoltaic module of the single chip microcomputer, the single chip microcomputer controls the switch of the MOS switching tube after receiving the signal, the collector electrode and the emitter electrode of the MOS switching tube are respectively connected with the anode and the cathode of the photovoltaic module, and the resistor is connected in series between the collector electrode of the MOS switching tube and the anode of the photovoltaic module.
9. An enhanced light weight photovoltaic module as recited by claim 8, further characterized by: and the 5V power supply is connected with a light emitting diode in series.
10. An enhanced light weight photovoltaic module as recited by claim 7, wherein: the upper electrode plate comprises a fixed plate, a tension spring and a movable plate, the tension spring connects the fixed plate and the movable plate, and the fixed plate is fixed on the box body of the junction box; the pushing conductive device consists of a flange nut, an insulating pushing rod and a waterproof ring, the insulating pushing rod is placed in the flange nut, and the flange nut presses the waterproof ring to be screwed on the box body; each insulating push rod corresponds to one upper electrode plate, the tension spring penetrating through the upper electrode plates is abutted to the movable sheet to push the movable sheet to be tightly attached to the lower electrode plates, the movable sheets of the lower electrode plates on two sides respectively correspond to one upper electrode plate, and each lower electrode plate in the middle corresponds to the movable sheets of the two upper electrode plates with opposite polarities.
11. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the thickness of the front packaging layer is 20-30 mu m, and convex-concave lines are pressed on the outer surface of the front packaging layer.
12. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the circuit board is provided with an observation hole at the position corresponding to the temperature-sensitive material on the back of the photovoltaic cell.
13. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the thickness of the first bonding layer and the second bonding layer is between 0.5 and 0.7mm, and the thickness of the third bonding layer and the fourth bonding layer is between 0.2 and 0.4 mm.
14. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the photovoltaic module also comprises a waterproof layer and a decorative layer, the waterproof layer is positioned on the periphery between the front packaging layer and the rear packaging layer of the photovoltaic module, and the decorative layer is positioned in the gap of the photovoltaic cells connected in series; the waterproof layer is butyl rubber.
15. An enhanced light photovoltaic module as recited by claim 1, further characterized by: the edge of the photovoltaic module is provided with a fixing hole or a connecting hole.
16. A method of manufacturing an enhanced light weight photovoltaic module as claimed in any one of claims 1 to 15, the steps of:
the first step is as follows: stacking the film layers: the back of the glass fiber plate is sequentially covered with a fourth bonding layer and a rear packaging layer, and the peripheries of the glass fiber plate and the fourth bonding layer are smaller than the edge of the rear packaging layer;
the second step is that: first lamination: putting the laminated film layer into a laminating machine for first laminating;
the third step: series connection of bulk photovoltaic cells: after paving the blocky photovoltaic cells, welding and connecting the blocky photovoltaic cells in series into a plurality of strings by using tin-coated belts;
the fourth step: stacking the film layers: laying a third bonding layer on the front surface of the glass fiber board laminated for the first time, placing the welded blocky photovoltaic cell on the third bonding layer, and welding the two ends of the tin-coated belt on the circuit board after the two ends of the tin-coated belt pass through the third bonding layer; laying a second bonding layer on the blocky photovoltaic cell, then placing the front bearing layer on the second bonding layer, laying a first bonding layer on the front bearing layer, and placing the front packaging layer on the first bonding layer;
the fifth step: and (3) second lamination: putting the laminated film layer into a laminator again for second lamination;
and a sixth step: and (3) peripheral sealing: bonding a waterproof layer on the periphery of the laminated assembly between the front packaging layer and the rear packaging layer, and compacting by using a heating roller;
the seventh step: installing a junction box: and (4) installing the junction box outside the rear packaging layer, and connecting wires in the junction box to finish the manufacture of the enhanced light photovoltaic module.
17. A method of manufacturing an enhanced light weight photovoltaic module as recited in claim 16, wherein: the manufacturing method of the front bearing layer comprises the following steps:
the first step is as follows: fully mixing the conversion material with the epoxy resin adhesive, the curing agent and the defoaming agent, then stirring at a constant speed by using a stirrer, wherein the stirring speed is 700-900 revolutions per minute, stirring for 3-4 minutes, then placing the mixture in vacuum equipment, pumping out doped air in the stirring process, and preventing the defect of bubble formation in the curing process, wherein the vacuumizing pressure is-1.5-0.5 MPa, and the vacuumizing time is 2-3 minutes;
the second step is that: uniformly pouring the prepared conversion material into a glue box of a coating machine, placing and installing a glass fiber net on a roller of the coating machine, and uniformly coating front and back at the coating speed of 1.5-2.0 m/min;
the third step: and (3) putting the glass fiber net coated with the conversion material into a tunnel furnace for curing, wherein the speed of the tunnel furnace is consistent with that of the coating machine, the temperature of the tunnel furnace is controlled at 150-175 ℃, and the time is controlled at 22-25 minutes, so as to prepare the front bearing layer.
18. A method of manufacturing an enhanced light weight photovoltaic module as recited in claim 16, wherein: the manufacturing method of the temperature-sensitive material of the blocky photovoltaic cell comprises the steps of silk-screening the temperature-control material on the back surface of a photovoltaic cell chip by using a silk-screen printing screen, and carrying out photocuring solidification by using a UV photocuring machine, wherein the photocuring speed is 1.5-2.0m/min, and the photocuring solidification time is 3-4 minutes, so that the temperature-sensitive material is prepared, and the temperature-sensitive material is silk-screened into a round shape, and the diameter is controlled to be 15-25 mm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782629A (en) * | 2021-09-10 | 2021-12-10 | 沃沛斯(常州)能源科技有限公司 | Crystalline silicon flexible photovoltaic module and preparation method thereof |
| CN114068745A (en) * | 2022-01-17 | 2022-02-18 | 深圳市华宝新能源股份有限公司 | Light solar power generation panel and preparation method thereof |
| KR102607087B1 (en) * | 2023-05-10 | 2023-11-29 | 골드텍 주식회사 | Solar cell module and high-efficiency solar power generation system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416264A (en) * | 1980-10-29 | 1983-11-22 | General Electric Company | Solar heat collector |
| US20050040374A1 (en) * | 2002-01-25 | 2005-02-24 | Konarka Technologies, Inc. | Photovoltaic fibers |
| CN201149872Y (en) * | 2007-12-17 | 2008-11-12 | 天津理工大学 | Solar cell array capable of improving conversion efficiency using near infrared light |
| CN101980370A (en) * | 2010-08-31 | 2011-02-23 | 深圳市创益科技发展有限公司 | Frameless solar battery component and encapsulation method |
| CN103325873A (en) * | 2013-05-14 | 2013-09-25 | 保定嘉盛光电科技有限公司 | Solar cell module and manufacturing process thereof |
| CN103888056A (en) * | 2014-03-07 | 2014-06-25 | 苏州边枫电子科技有限公司 | Over-temperature state indication type photovoltaic junction box based on Hall sensor |
| WO2020058454A1 (en) * | 2018-09-22 | 2020-03-26 | Total Sa | Flexible laminate of photovoltaic cells and associated production method |
| CN112420864A (en) * | 2020-12-10 | 2021-02-26 | 汉摩尼(江苏)光电科技有限公司 | Light-weight laminated photovoltaic module based on glass fiber pre-dipping process and manufacturing method thereof |
-
2021
- 2021-04-14 CN CN202110397553.5A patent/CN113178500B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416264A (en) * | 1980-10-29 | 1983-11-22 | General Electric Company | Solar heat collector |
| US20050040374A1 (en) * | 2002-01-25 | 2005-02-24 | Konarka Technologies, Inc. | Photovoltaic fibers |
| CN201149872Y (en) * | 2007-12-17 | 2008-11-12 | 天津理工大学 | Solar cell array capable of improving conversion efficiency using near infrared light |
| CN101980370A (en) * | 2010-08-31 | 2011-02-23 | 深圳市创益科技发展有限公司 | Frameless solar battery component and encapsulation method |
| CN103325873A (en) * | 2013-05-14 | 2013-09-25 | 保定嘉盛光电科技有限公司 | Solar cell module and manufacturing process thereof |
| CN103888056A (en) * | 2014-03-07 | 2014-06-25 | 苏州边枫电子科技有限公司 | Over-temperature state indication type photovoltaic junction box based on Hall sensor |
| WO2020058454A1 (en) * | 2018-09-22 | 2020-03-26 | Total Sa | Flexible laminate of photovoltaic cells and associated production method |
| CN112420864A (en) * | 2020-12-10 | 2021-02-26 | 汉摩尼(江苏)光电科技有限公司 | Light-weight laminated photovoltaic module based on glass fiber pre-dipping process and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782629A (en) * | 2021-09-10 | 2021-12-10 | 沃沛斯(常州)能源科技有限公司 | Crystalline silicon flexible photovoltaic module and preparation method thereof |
| CN114068745A (en) * | 2022-01-17 | 2022-02-18 | 深圳市华宝新能源股份有限公司 | Light solar power generation panel and preparation method thereof |
| KR102607087B1 (en) * | 2023-05-10 | 2023-11-29 | 골드텍 주식회사 | Solar cell module and high-efficiency solar power generation system |
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