CN113169064A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
CN113169064A
CN113169064A CN201980077823.5A CN201980077823A CN113169064A CN 113169064 A CN113169064 A CN 113169064A CN 201980077823 A CN201980077823 A CN 201980077823A CN 113169064 A CN113169064 A CN 113169064A
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China
Prior art keywords
bump
resin layer
bumped
bumps
polishing
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CN201980077823.5A
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Chinese (zh)
Inventor
四宫圭亮
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Lintec Corp
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Lintec Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention provides a method for manufacturing a semiconductor device, the method comprising: a step of forming a resin layer (13) on a bump forming surface (2A) of a bumped member (2) on which a plurality of bumps (22) are formed; and a step of polishing the resin layer (13) to remove the resin layer (13) covering the surface of the bump (22).

Description

Method for manufacturing semiconductor device
Technical Field
The present invention relates to a method for manufacturing a semiconductor device.
Background
In recent years, with the miniaturization and thinning of electronic devices, there has been an increasing demand for the thinning and miniaturization of semiconductor packages. Therefore, as a mounting method of a semiconductor element, a flip chip connection method in which a bump electrode called a bump is formed on an electrode of a chip and the electrode of a substrate and the electrode of the chip are directly connected via the bump has been proposed instead of a conventional Wire Bonding method in which connection is performed using a metal Wire.
In such a flip-chip connection type mounting method, a resin layer is provided so as to cover the bumps of the bumped wafer, the bumped chip, and the like, depending on various purposes. Examples of such a resin layer include: an adhesive layer for adhering the bumped chips to the substrate, an underfill layer for enhancing the connection of the bumped chips to the substrate, a protective layer for protecting the bumped wafer or the bumped chips, and the like.
However, when the resin layer covers the bump, the resin layer on the bump must be mechanically removed to ensure electrical connection between the bump and the electrode of the substrate. Therefore, there is a problem in connection reliability between the bumped chip and the substrate. Further, in the case of connecting the bump chip and the substrate by the reflow process, since the molten solder from the bump is covered with the resin layer, there is a problem that a self-alignment effect (a phenomenon that the chip and the substrate are automatically corrected to a normal position at the time of reflow even if the alignment accuracy between the electrodes of the chip and the substrate is poor and a deviation occurs) cannot be obtained.
In order to solve the above problem, for example, a method is proposed, which includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and a step of removing the resin layer covering the bump surface by applying plasma treatment to the resin layer (see patent document 1).
In order to solve the above problem, for example, a method is also proposed, which includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and a step of removing the resin layer covering the bump surface by grinding (see patent document 2).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2016/194431
Patent document 2: japanese patent laid-open publication No. 2017-84903
Disclosure of Invention
Problems to be solved by the invention
In the method described in patent document 1, plasma is irradiated not only to a portion of the resin layer desired to be removed but also to the entire area within the irradiation plane. That is, plasma is irradiated not only to the resin layer covering the top of the bump but also to the resin layer covering the portion which is originally desired to be protected. Therefore, the plasma irradiation may be affected even in a portion which is originally desired to be protected, and there is a risk of deterioration and damage.
In addition, since the method described in patent document 2 is a method of removing the resin layer by grinding, a cutter, a grinder, or a planer comes into contact with the resin layer covering the bump, and a mechanical load is applied to the bump. Therefore, the bumps are displaced and come off, which may reduce the connection reliability.
Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device, which can efficiently manufacture a semiconductor device having excellent connection reliability by preventing deterioration and damage of a portion of a bumped member which is originally intended to be protected.
Means for solving the problems
A method for manufacturing a semiconductor device according to an embodiment of the present invention includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and polishing the resin layer to remove the resin layer covering the surface of the bump.
According to this configuration, the resin layer can be provided on the bump forming surface of the bumped member for various purposes. Examples of the resin layer include: an adhesive layer for adhering the bumped chips to the substrate, an underfill layer for enhancing the connection of the bumped chips to the substrate, a protective layer for protecting the bumped wafer or the bumped chips, and the like.
Therefore, the resin layer covering the surface of the bump can be removed simply and efficiently by polishing. In the polishing method, since the portion in contact with the polishing wheel is polished, the resin layer covering the bump in contact with the polishing wheel can be selectively removed, and thus deterioration and damage of the portion of the bumped member which is originally intended to be protected can be prevented.
In addition, when the resin layer is removed by the grinding method, a dicing saw, a grinding machine, a planer, or the like comes into contact with the resin layer covering the bump, and thus a large mechanical load is applied to the bump. However, according to the polishing method, since the polishing wheel is relatively flexible in contact with the resin layer, the mechanical load applied to the bump can be sufficiently reduced, and the positional shift and the falling-off of the bump can be prevented.
Therefore, by removing the resin layer covering the surface of the bump and electrically connecting the bump exposed on the surface to the electrode of the substrate, a semiconductor device having excellent connection reliability can be efficiently manufactured.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the method further includes: and a step of bonding a dicing tape to the surface opposite to the bump formation surface.
According to this configuration, since the member with bumps is attached to the dicing tape, the positional displacement of the bumps can be suppressed during the polishing.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the method further includes: and removing the resin layer to electrically connect the bump with the electrode of the substrate.
According to this configuration, the resin layer covering the surface of the bump is removed, and the bump having the exposed surface is electrically connected to the electrode of the substrate, whereby a semiconductor device having excellent connection reliability can be obtained.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the average height of the bumps is preferably 500 μm or less.
The lower the average height of the bumps, the more easily the bumps are detached during polishing, and the more easily the bumped member is damaged. However, according to the polishing method, even if the average height of the bumps is 500 μm or less, the resin layer can be efficiently removed while preventing damage of the bumped member.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the material of the bump is preferably at least one selected from the group consisting of copper, silver, gold, aluminum, and a solder alloy.
Thus, when the material of the bump is at least one selected from the group consisting of copper, silver, gold, aluminum, and a solder alloy, the resin layer can be efficiently removed while preventing damage to the bumped member by the polishing method.
Drawings
Fig. 1 is a schematic sectional view showing an adhesive sheet for forming a resin layer according to a first embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view showing a bumped member (bumped wafer) of the first embodiment of the invention.
Fig. 3A is an explanatory view for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3B is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3C is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3D is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3E is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3F is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 4 is a schematic view showing a state in which a resin layer is formed on a bump formation surface of a bumped member (bumped wafer) according to a first embodiment of the present invention.
Fig. 5 is a schematic view showing the disk and polishing wheel of the polishing apparatus and the bumped wafer as viewed from below the bump formation surface in the resin polishing process according to the first embodiment of the present invention.
Fig. 6 is a sectional view showing the VI-VI section of fig. 5.
Fig. 7A is an explanatory view for explaining a method of manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 7B is an explanatory view for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 7C is an explanatory view for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 7D is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the second embodiment of the present invention.
Fig. 8 is a partially enlarged SEM photograph showing the bump chip on which the resin layer was formed obtained in example 1.
Fig. 9 is a partially enlarged SEM photograph showing a resin layer-formed bump chip obtained in comparative example 1.
Description of the symbols
A 13 … resin layer, a 2 … bumped wafer (bumped member), a 22 … bump, a 2a … bumped chip (bumped member), a 4 … substrate, a 42 … electrode, and a 100 … semiconductor device.
Detailed Description
[ first embodiment ]
The present invention will be described below with reference to the accompanying drawings by way of examples of embodiments. The present invention is not limited to the content of the embodiments. In the drawings, for ease of explanation, there are portions illustrated in enlarged or reduced sizes.
First, an adhesive sheet and a bumped wafer used in the present embodiment will be described.
(adhesive sheet)
Fig. 1 shows an adhesive sheet 1 used in the present embodiment.
The adhesive sheet 1 used in the present embodiment includes a support layer 11, an adhesive layer 12, and a resin layer 13 containing an adhesive. The surface of the resin layer 13 may be protected by a release film or the like before being bonded to a wafer.
As the support layer 11, a known support can be used as a support of the adhesive sheet, and for example, a plastic film or the like can be used. Such a support layer 11 supports the adherend during processing of the adherend.
Examples of the plastic film include: polyethylene films, polypropylene films, polybutylene films, polybutadiene films, polymethylpentene films, polyvinyl chloride films, vinyl chloride copolymer films, polyethylene terephthalate films, polyethylene naphthalate films, polybutylene terephthalate films, polyurethane films, ethylene vinyl acetate copolymer films, ionomer resin films, ethylene- (meth) acrylic acid copolymer films, ethylene- (meth) acrylic acid ester copolymer films, polystyrene films, polycarbonate films, polyimide films, fluororesin films, and the like. These films may be single-layer films or laminated films. In the case of laminating a film, one kind of film may be laminated, or two or more kinds of films may be laminated.
The adhesive layer 12 can be formed using a known adhesive as the adhesive of the adhesive sheet. Such an adhesive layer 12 firmly fixes the support layer 11 and the resin layer 13 during processing of the adherend, and then fixes and leaves the resin layer 13 on the adherend, thereby facilitating peeling from the support layer 11. The pressure-sensitive adhesive layer 12 may be cured by irradiation with energy rays such as ultraviolet rays, so that the resin layer 13 can be easily peeled.
Examples of the pressure-sensitive adhesive include acrylic pressure-sensitive adhesives, rubber pressure-sensitive adhesives, silicone pressure-sensitive adhesives, and urethane pressure-sensitive adhesives.
The resin layer 13 can be formed using a known adhesive as the adhesive of the adhesive sheet. The resin layer 13 containing such an adhesive can bond the bumped chip 2a and the substrate 4, which will be described later.
Examples of the adhesive include adhesives containing a thermosetting resin such as an epoxy resin and a thermosetting agent. The adhesive may further contain an inorganic filler in order to adjust the coefficient of thermal expansion of the cured product. Examples of the inorganic filler include silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, and boron nitride. These materials may be used alone or in combination of two or more.
(wafer with bump)
Fig. 2 shows a bumped wafer 2 (bumped member) used in the present embodiment.
The bumped wafer 2 used in this embodiment includes a semiconductor wafer 21 and bumps 22. The bumps 22 are formed on the side of the semiconductor wafer 21 having the circuit. The bumped wafer 2 of the present embodiment includes a plurality of bumps 22.
The bumped wafer 2 has a bumping surface 2A on which a plurality of bumps 22 are formed and a back surface 2B on which no bumps 22 are formed.
As the semiconductor wafer 21, a known semiconductor wafer can be used, and for example, a silicon wafer or the like can be used.
The thickness of the semiconductor wafer 21 is usually 10 μm or more and 1000 μm or less, and preferably 50 μm or more and 750 μm or less.
As the material of the bump 22, a known conductive material can be used. Examples of the material of the bump 22 include any material selected from copper, silver, gold, aluminum, and a solder alloy. As the solder alloy, a known solder material can be used, and for example, a lead-free solder containing tin, silver, and copper can be used.
The average height of the bumps 22 is usually 5 μm or more and 1000 μm or less, preferably 50 μm or more and 500 μm or less, and more preferably 50 μm or more and 250 μm or less. The lower the average height of the bumps 22, the more easily the bumps 22 fall off during polishing, and the more easily the bumped member is damaged. However, according to the method for manufacturing a semiconductor device of the present embodiment, even if the average height of the bumps 22 is, for example, 500 μm or less, the resin layer can be efficiently removed while preventing damage to the bumped member.
The cross-sectional shape of the bump 22 viewed from the side direction is not particularly limited, and may be a semicircular shape, a semi-elliptical shape, a circular shape, a rectangular shape, a trapezoidal shape, or the like.
The type of the bump 22 is not particularly limited, and examples thereof include a spherical bump, a mushroom-shaped bump, a nail-shaped bump, a cone-shaped bump, a cylindrical bump, a dot-shaped bump, a cube-shaped bump, and a pillar-shaped bump. These bumps may be used alone or in combination of two or more.
(method of manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device according to this embodiment will be described.
Fig. 3A to 3F are explanatory views illustrating a method for manufacturing a semiconductor device according to the first embodiment.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump formation surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed. Specifically, as shown in fig. 3A, 3B, and 3C, the resin layer 13 is formed on the bump forming surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed, by the following method including: a step of bonding the resin layer 13 of the adhesive sheet 1 to the bump formation surface 2A of the bumped wafer 2 (adhesive sheet bonding step), a step of bonding the dicing tape 3 to the back surface 2B of the bumped wafer 2 (dicing tape bonding step), and a step of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13 (support peeling step).
In the method of manufacturing a semiconductor device according to the present embodiment, next, as shown in fig. 3D, the resin layer 13 is polished to remove the resin layer 13 covering the surface of the bump 22 (resin removal step). In the present embodiment, a part of the bump 22 is removed together with the resin layer 13, but only the resin layer 13 may be removed.
Then, as shown in fig. 3E and 3F, the resin layer 13 is removed and the bump 22 with the exposed surface is electrically connected to the electrode 42 of the substrate 4 by the following method: a step of dicing the tape bump wafer 2 with a dicing blade (dicing step), and a step of picking up the bump chips 2a singulated by dicing and bonding and fixing the chips to the substrate 4 as an adherend (bonding step).
The adhesive sheet attaching step, dicing tape attaching step, support body peeling step, resin removing step, dicing step, and bonding step will be described in more detail below.
(adhesive sheet sticking step)
In the adhesive sheet joining step, as shown in fig. 3A, the resin layer 13 of the adhesive sheet 1 is bonded to the surface (bump formation surface 2A) of the bumped wafer 2 on which the bumps 22 are formed. After the adhesive sheet 1 is attached, the bumps 22 are covered with the resin layer 13.
Here, as the attaching method, a known method can be used, and there is no particular limitation, and a method by pressure bonding is preferable. In general, pressure bonding is performed by pressing the adhesive sheet 1 with a pressure bonding roller or the like. The conditions for the pressure bonding are not particularly limited, and the pressure bonding temperature is preferably 40 ℃ or more and 120 ℃ or less. The roll pressure is preferably 0.1MPa or more and 20MPa or less. The pressure bonding speed is preferably 1mm/sec or more and 20mm/sec or less.
The thickness of the resin layer 13 of the adhesive sheet 1 is preferably smaller than the height of the bump 22, more preferably 0.8 times or less the height of the bump 22, and particularly preferably 0.1 times or more and 0.7 times or less the height of the bump 22. If the thickness of the resin layer 13 is not more than the upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed in a resin removal step to be described later.
(dicing tape-bonding step)
In the dicing tape bonding step, as shown in fig. 3B, the dicing tape 3 is bonded to the surface (back surface 2B) of the bumped wafer 2 on which the bumps 22 are not formed.
Here, as the attaching method, a known method can be used, and there is no particular limitation, and a method by pressure bonding is preferable. The dicing tape 3 is usually pressed by a pressure roller or the like. The pressure bonding conditions are not particularly limited and may be set as appropriate. As the dicing tape 3, a known dicing tape may be used.
(support stripping step)
In the support peeling step, as shown in fig. 3C, the support layer 11 and the pressure-sensitive adhesive layer 12 of the adhesive sheet 1 are peeled from the resin layer 13. Fig. 4 shows a bumped wafer 2 having a resin layer 13 formed on the bump formation surface 2A, which is obtained by the support peeling step. In addition, the resin layer 13 is preferably formed so as to follow the shape of the bump 22. This can reduce the number of resin layers 13 to be removed in a resin removal step described later, and can improve the operation efficiency.
When the adhesive layer 12 has ultraviolet curability, ultraviolet rays are irradiated from the support layer 11 side as necessary. This cures the pressure-sensitive adhesive layer 12, reduces the adhesive strength at the interface between the pressure-sensitive adhesive layer 12 and the resin layer 13, and facilitates the peeling of the pressure-sensitive adhesive layer 12 from the resin layer 13.
(resin removal step)
In the resin removal step, as shown in fig. 3D, the resin layer 13 covering the surface of the bump 22 and a part of the bump 22 are removed by polishing.
In the present specification, polishing refers to polishing in which a polishing agent containing abrasive grains and a medium is immersed in or attached to a polishing wheel, and the surface of an object to be treated is polished by the polishing wheel. More specifically, the polishing refers to polishing in which the surface of the object to be processed is polished by using the polishing apparatus 5 shown in fig. 5 and 6. The polishing apparatus 5 includes a rotatable disk 51 and a polishing wheel 52 attached to the disk 51.
The resin layer 13 may be removed according to its purpose. For example, if the bump 22 with the exposed surface is to be electrically connected to the electrode 42 of the substrate 4, the bump may be removed to such an extent that the electrical connection is possible. Specifically, the amount of removal of the resin layer 13 can be adjusted in view of the balance between the connection reliability and the securing of the function of the resin layer 13. In addition, a part of the bump 22 refers to a top portion of the bump 22. In this way, when the top end portion of the bump 22 is removed by polishing, the surface of the bump 22 is reliably exposed. Therefore, the removal amount of the bump 22 can be adjusted from the viewpoint of adjusting the height of the bump 22 to an arbitrary height.
In the resin removal step, the resin layer 13 covering the surface of the bump 22 can be removed simply and efficiently by polishing. At the time of polishing, since the portion in contact with the polishing wheel 52 is polished, the resin layer 13 covering the top of the bump 22 in contact with the polishing wheel 52 can be selectively removed, and thus deterioration and damage of the portion of the bumped member which is originally intended to be protected can be prevented. The portions of the bumped member that are originally intended to be protected include, for example, the root portions of the bumps 22, the bump formation surface 2A, and the back surface 2B of the semiconductor wafer 21.
Further, in the case of removing the resin layer 13 by the grinding method, a large mechanical load is applied to the bump 22 because a dicing saw, a grinding machine, a planer, or the like is in contact with the resin layer 13 covering the bump 22, but in the resin removing step of the present embodiment, a relatively flexible polishing wheel 52 is in contact with the resin layer 13, so that the mechanical load applied to the bump 22 can be sufficiently reduced, and the resin layer 13 can be removed while preventing the position of the bump from being displaced and falling off.
In the resin removal step, as shown in fig. 5 and 6, the disk 51 and the polishing wheel 52 of the polishing apparatus 5 are rotated while the bump forming surface 2A side of the bumped wafer 2 is brought into contact with the polishing wheel 52, and the resin layer 13 covering the surface of the bump 22 and a part of the bump 22 are polished. Here, fig. 5 is a schematic view showing the disk 51 and the polishing wheel 52 of the polishing apparatus 5 and the bumped wafer 2 as viewed from below the bump forming face 2A. Fig. 6 is a sectional view showing the VI-VI section of fig. 5.
In this way, the resin layer 13 covering the surface of the bump 22 and a part of the bump 22 can be removed by polishing.
The polishing wheel 52 is not particularly limited, and a known polishing wheel may be used. The polishing wheel 52 is preferably any one selected from the group consisting of cloth, leather, rubber, and a brush. Among them, cloth or leather is more preferable from the viewpoint of easy impregnation of the polishing agent.
A polishing agent containing abrasive particles and a medium is impregnated into or attached to the polishing wheel 52.
The abrasive grains are not particularly limited, and known abrasive grains can be used. The abrasive grains are preferably any abrasive grains selected from the group consisting of alumina, silica, diamond, silicon carbide, zirconia, and boron nitride. Among them, alumina or silica is more preferable from the viewpoint of easy adjustment of the polishing amount.
The medium is not particularly limited, and known abrasive grains can be used. The medium is preferably any medium selected from water, oil and organic solvents. Among them, water is preferable from the viewpoint of having little influence on the resin layer 13. In addition, from the viewpoint of suppressing the occurrence of migration, the medium preferably does not contain a halide plasma substance.
The conditions of the polishing apparatus 5 are not particularly limited, and the following conditions can be adopted, for example.
From the viewpoint of preventing the position deviation and the falling-off of the bumps, the rotation speed of the disk 51 is preferably 50rpm or more and 1000rpm or less, and more preferably 100rpm or more and 500rpm or less.
From the viewpoint of preventing the positional deviation and the falling of the bumps, the load when the bumped wafer 2 is brought into contact with the polishing wheel 52 is preferably 0.1N or more and 10N or less, and more preferably 0.5N or more and 5N or less.
After the resin removal step, as shown in fig. 3D, it is preferable that irregularities remain on the plane formed by the bump 22 and the resin layer 13. Accordingly, in the bonding step described later, when the bumped chip 2a is connected to the electrode 42 of the substrate 4, the bumps 22 and the resin layer 13 have a margin to move in the gap, and thus the connection can be performed while the bumps 22 are compressed. Therefore, in the present embodiment, the connection reliability can be improved as compared with the case where the bumped chips 2a formed of the bumps 22 and the resin layer 13 and having smooth planes are joined.
(cutting Process)
In the dicing process, as shown in fig. 3E, the bumped wafer 2 is diced by a dicing blade. In this way, the bumped wafer 2 can be singulated into bumped chips 2 a.
The cutting device is not particularly limited, and a known cutting device can be used. The cutting conditions are not particularly limited either. Instead of the dicing method using the dicing blade, a laser dicing method, a stealth dicing method, or the like may be used.
(bonding) Process)
In the bonding step, as shown in fig. 3F, the bumped chips 2a singulated by dicing are picked up and bonded and fixed to the substrate 4 including the base material 41 and the electrodes 42. Since the resin layer 13 is removed and the surface of the bump 22 of the bumped chip 2a is exposed, the bump 22 can be electrically connected to the electrode 42 of the substrate 4.
The substrate 4 is not particularly limited, and a lead frame, a wiring substrate, a silicon wafer or a silicon chip having a circuit formed on the surface thereof, or the like can be used. The material of the substrate 41 is not particularly limited, and examples thereof include ceramics and plastics. Examples of the plastic include epoxy, bismaleimide triazine, and polyimide.
In the bonding step, if necessary, heat treatment may be applied to cure the adhesive of the resin layer 13.
The conditions of the heat treatment may be appropriately set according to the type of the adhesive.
In the bonding step, a reflow process may be applied as necessary to melt the bumps 22 of the bumped chip 2a and solder the bumped chip 2a to the substrate 4.
The conditions of the reflow process may be appropriately set according to the kind of solder or the like.
As described above, the semiconductor device 100 can be manufactured.
(Effect of the first embodiment)
According to the present embodiment, the following operational effects can be obtained.
(1) By polishing, the resin layer 13 covering the surface of the bump 22 can be removed easily and efficiently. When the sectional shape viewed from the side direction of the bump 22 is a semicircular shape, a semi-elliptical shape, a circular shape, a rectangular shape, or a trapezoidal shape, the resin layer 13 covering the surface of the bump 22 may be removed.
(2) According to the polishing method, since the portion in contact with the polishing wheel 52 is polished, the resin layer 13 covering the top portions of the bumps 22 in contact with the polishing wheel 52 can be selectively removed, and deterioration and damage of the portion of the bumped wafer 2 which is originally intended to be protected can be prevented.
(3) In the case of removing the resin layer 13 by the grinding method, a large mechanical load is applied to the bump 22 because a dicing saw, a grinder, a planer, or the like is in contact with the resin layer 13 covering the bump 22, but according to the polishing method, a relatively flexible polishing wheel 52 is in contact with the resin layer 13, so that the mechanical load applied to the bump 22 can be sufficiently reduced, and the resin layer 13 can be removed while preventing the position of the bump from being displaced and falling off.
(4) By removing the resin layer 13 covering the surface of the bump 22 and electrically connecting the bump 22 with the electrode 42 of the substrate 4, the semiconductor device 100 having excellent connection reliability is obtained.
(5) By the polishing, not only the resin layer 13 but also a part of the bump 22 is removed. Therefore, the heights of the bumps 22 can be adjusted to any height. In addition, the heights of the plurality of bumps 22 may be uniformed to a uniform height. Further, since a part of the bump 22 is polished, the surface of the bump 22 can be reliably exposed, and the exposed area of the surface of the bump 22 can be increased. Therefore, the bumped chip 2a and the electrode of the substrate 4 can be connected to each other by soldering through the bumps 22 whose surfaces are exposed. Further, when the height of the bumps 22 is made uniform to any uniform height, it is possible to prevent a connection failure that may be caused by the height of the bumps 22 and variations thereof. This makes it possible to obtain a semiconductor device 100 having excellent connection reliability.
(6) In the resin removal step, since the wafer 2 with bumps is polished in a state of being bonded to the dicing tape 3, the positional displacement of the bumps 22 can be suppressed during polishing.
(7) An adhesive layer (resin layer 13) for adhering the bumped chip 2A and the substrate 4 may be provided on the bump forming surface 2A of the bumped chip 2A.
(8) Since the resin layer 13 is provided on the bumped wafer 2, the resin layer 13 covering the surface of the bumps 22 is removed, and then the bumped chips 2a are singulated, the resin layer 13 can be collectively provided on the plurality of bumped chips 2 a.
[ second embodiment ]
Next, a second embodiment of the present invention will be described with reference to the drawings.
The adhesive sheet 1 and the substrate 4 of the present embodiment are substantially the same as the adhesive sheet 1 and the substrate 4 of the first embodiment, respectively, and therefore detailed description thereof will be omitted or simplified.
Fig. 7A, 7B, 7C, and 7D are explanatory views illustrating a method for manufacturing a semiconductor device according to a second embodiment.
In the first embodiment, after the resin layer 13 is formed on the bumped wafer 2, the resin layer 13 is removed by polishing, and then the bumped chips 2a are singulated by dicing. In contrast, in the second embodiment, the resin layer 13 is formed on the bumped chip 2a singulated in advance, and then the resin layer 13 is polished.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump formation surface 2A of the bumped chip 2A on which the plurality of bumps 22 are formed. Specifically, as shown in fig. 7A and 7B, the resin layer 13 is formed on the bump forming surface 2A of the bumped chip 2A on which the plurality of bumps 22 are formed by a method including a step (adhesive sheet bonding step) of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bumped chip 2A, and a step (support peeling step) of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13.
In the method of manufacturing a semiconductor device according to the present embodiment, next, as shown in fig. 7C, the resin layer 13 is polished to remove the resin layer 13 covering the surface of the bump 22 (resin removal step). Then, as shown in fig. 7D, the bumped chip 2a is picked up and bonded and fixed to the substrate 4 as an adherend (bonding step). The resin layer 13 is removed by a method including a resin removal step and a bonding step, and the bump 22 with the exposed surface is electrically connected to the electrode 42 of the substrate 4.
The adhesive sheet attaching step, the support peeling step, the resin removing step, and the bonding step in the present embodiment may be performed by the same methods as those of the adhesive sheet attaching step, the support peeling step, the plasma treatment step, and the bonding step in the first embodiment.
According to the present embodiment, the same operational effects as those of the operational effects (1) to (7) in the first embodiment described above can be achieved.
[ variation of embodiment ]
The present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within a range in which the object of the present invention can be achieved are included in the present invention.
For example, in the above-described embodiment, the embodiment in which the resin layer 13 is removed together with a part of the bump 22 by polishing in the resin removal step has been described as an example, but the present invention is not limited to such an embodiment. That is, in another embodiment of the present invention, only the resin layer 13 may be removed by polishing in the resin removal step.
In the above-described embodiment, the resin layer 13 is provided as an adhesive layer for adhering the bump-attached chip 2a and the substrate 4, but is not limited thereto. That is, in the present invention, the resin layer may be provided according to various purposes. For example, the resin layer 13 may be provided as an underfill layer for enhancing the connection between the bumped chip 2a and the substrate 4. The resin layer 13 may be provided as a protective layer for protecting the tape-bump chip 2 or the tape-bump chip 2 a. In this case, as the material of the resin layer 13, a known material can be used as the material of the underfill layer or the protective layer.
In the above-described embodiment, the resin layer 13 is in contact with both the bumped chip 2a and the substrate 4, but the present invention is not limited thereto. For example, when the resin layer 13 is provided as a protective layer for protecting the tape bump chip 2a, the resin layer 13 may be in contact with the tape bump chip 2a, and may not be in contact with the substrate 4.
In the above-described embodiment, the bumped wafer 2 is used as the bumped member, but the present invention is not limited thereto. For example, the bumped component may be a package with bumps (e.g., bga (ball grid array), csp (chip size package), etc.).
In the above-described embodiment, the resin layer 13 is formed on the bump forming surface 2A using the adhesive sheet 1 to cover the bumps 22, but the present invention is not limited thereto. For example, the resin layer 13 may be formed by applying a resin composition to the bump forming surface 2A and curing the resin composition to cover the bumps 22.
In the above-described embodiment, the adhesive sheet 1 including the support layer 11, the pressure-sensitive adhesive layer 12, and the resin layer 13 is used, but the present invention is not limited thereto. For example, the adhesive sheet 1 may be an adhesive sheet including the support layer 11 and the resin layer 13 without the pressure-sensitive adhesive layer 12. In this case, in the support peeling step, the support layer 11 may be peeled from the resin layer 13.
In the resin removal step of the second embodiment, the resin layer 13 may be polished while being fixed to a fixing member (e.g., a suction table, an adhesive sheet, or the like) for fixing the bump chip 2 a. After the resin layer 13 is removed, the bumped chip 2a may be picked up from the fixing member and subjected to the bonding step.
Examples
The present invention will be described in more detail below with reference to examples. The present invention is not limited to these arbitrary embodiments.
[ protective film-forming sheet ]
A protective film-forming sheet as a resin layer was produced as follows.
First, the following components (a), (b), (c), (d) and (e) were mixed at the following mixing ratios (in terms of solid content) to obtain a mixture. This mixture was diluted with methyl ethyl ketone to prepare a coating agent for forming a protective film having a solid content concentration of 55 mass%. The coating agent for forming a protective film was applied and dried to obtain a protective film-forming sheet having a thickness of 30 μm.
Figure BDA0003084718660000141
[ production of chip with bumps having protective film adhered thereon ]
An adhesive tape as a support layer provided with an adhesive layer and a protective film-forming sheet (thickness: 30 μm) as a resin layer were laminated to prepare an adhesive sheet. As the adhesive tape, E-8510HR (product name) manufactured by Linekeko Kabushiki Kaisha was used.
The adhesive sheet was attached to the following bumped chip as a bumped member under the following attachment conditions.
Pasting conditions
The device comprises the following steps: roller type laminating machine
(product name manufactured by Lindeke corporation: RAD-3510F/12)
Temperature: 90 deg.C
Pressure: 0.5MPa
Speed: 2mm/sec
Chip with bumps
The type of the bump: spherical projection
Height of the bump: 200 μm
Bump diameter: 250 μm
Bump pitch: 600 μm
After the adhesive sheet was attached to the chip with bumps, UV was irradiated from the adhesive sheet side using RAD-2700 (product name) manufactured by ledebacaceae, and only the adhesive tape was peeled off, thereby obtaining the chip with bumps to which the protective film forming sheet was attached. Then, the bumped chip with the protective film forming sheet attached thereto was treated at 130 ℃ under 0.5MPa for 2 hours to obtain a bumped chip with a protective film attached thereto.
[ example 1]
The top of the bump of the bumped chip attached with the protective film was polished under the following conditions using the following apparatus, and the protective film (corresponding to the resin layer) of the bump was removed.
Conditions of polishing
The device comprises the following steps: polishing device
(manufactured by Refine Tec corporation, product name: REFINE-POLISHER HV)
Polishing wheel: polish, suede cloth (cloth) polish manufactured by Refine Tec corporation: rotation speed of a polishing wheel of alumina particle dispersion MH159, manufactured by Musashi Holt corporation: 200rpm
Load on polishing wheel: 1N
The surface of the bump-attached chip to which the protective film was attached after polishing was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated according to the following criteria. The obtained results are shown in table 1. Fig. 8 shows a partially enlarged SEM photograph.
A: the protective film covering the top of the bump was removed, and the top was confirmed to be exposed.
B: the protective film covering the tops of the bumps remains without being removed.
C: not only the protective film covering the tops of the bumps but also the protective film of the portion that is originally desired to be protected is removed.
D: the position of the bump on the chip is deviated and falls off.
[ examples 2 and 3]
The protective film on the top of the bump was removed in the same manner as in example 1, except that the polishing conditions (the number of revolutions of polishing and the load on the polishing wheel) were changed according to the conditions shown in table 1.
The surface of the bump-attached chip to which the protective film was attached after polishing was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated in accordance with the same criteria as in example 1. The obtained results are shown in table 1.
Comparative example 1
A chip with bumps to which a protective film was attached was obtained in the same manner as in example 1, except that polishing was not performed.
The surface of the bump of the bumped chip attached with the protective film was observed by a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated in accordance with the same criteria as in example 1. The obtained results are shown in table 1. Fig. 9 shows a partially enlarged SEM photograph.
Comparative example 2
A bumped chip with a protective film attached thereto was obtained in the same manner as in example 1, except that plasma irradiation was performed under the following conditions without polishing.
The surface of the bump-attached chip to which the protective film was attached after the plasma irradiation was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated in accordance with the same criteria as in example 1. The obtained results are shown in table 1.
Conditions of plasma irradiation
Treating gas: SF6
Flow rate of process gas: 40cm3/min
Treatment pressure: 100Pa
Output power: 250W
Treatment time: 15 minutes
Cleaning: 1 time of
Comparative example 3
A bump chip with a protective film attached thereto was obtained in the same manner as in example 1, except that the bump chip with a protective film attached thereto was fixed to a jig with a double-sided adhesive tape and the protective film covering the bump was removed by grinding with a grinder under the following conditions.
The bump surface of the bump chip with the protective film attached thereto after grinding by the grinder was observed by a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in example 1. The obtained results are shown in table 1.
Conditions of grinding by the grinding machine
The device comprises the following steps: REFINE-POLISHER HV manufactured by Refine Tec
Polishing paper: #120 (Water-resistant polishing paper manufactured by Refine Tec corporation)
Rotating speed: 200rpm
Loading: 2N
[ Table 1]
Figure BDA0003084718660000161
According to embodiments 1 to 3, the protective film on the top of the bump can be selectively removed while preventing deterioration and damage of the portion of the bumped chip, which is to be protected originally, as the bumped member. In addition, according to embodiments 1 to 3, the position of the bump on the chip is not shifted and the bump is not detached. Therefore, by removing the resin layer by the method of examples 1 to 3 and electrically connecting the bumps with the exposed surface to the electrodes of the substrate, a semiconductor device with excellent connection reliability can be manufactured.
In comparative example 1, the protective film could not be removed.
In comparative example 2, not only the protective film covering the top of the bump but also the protective film of the portion which is originally desired to be protected was removed.
In comparative example 3, since the mechanical load of the grinder was applied to the bump, the bump was detached from the chip.
Industrial applicability
The present invention can be applied to a method for manufacturing a semiconductor device.

Claims (5)

1. A method of manufacturing a semiconductor device, the method comprising:
forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and
and polishing the resin layer to remove the resin layer covering the surface of the bump.
2. The method for manufacturing a semiconductor device according to claim 1, further comprising:
and a step of bonding a dicing tape to the surface opposite to the bump formation surface.
3. The method for manufacturing a semiconductor device according to claim 1 or 2, further comprising:
and removing the resin layer to electrically connect the bump with the electrode of the substrate.
4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3,
the average height of the bumps is 500 [ mu ] m or less.
5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4,
the bump is made of at least one of copper, silver, gold, aluminum and solder alloy.
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