CN113161760A - All-dielectric multi-band terahertz metamaterial absorber with randomly distributed units - Google Patents
All-dielectric multi-band terahertz metamaterial absorber with randomly distributed units Download PDFInfo
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- CN113161760A CN113161760A CN202110234078.XA CN202110234078A CN113161760A CN 113161760 A CN113161760 A CN 113161760A CN 202110234078 A CN202110234078 A CN 202110234078A CN 113161760 A CN113161760 A CN 113161760A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
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Abstract
The invention discloses an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units, which comprises a substrate layer and a structural layer, wherein the substrate layer and the structural layer are made of integrated highly-doped silicon materials, a plurality of grids are uniformly divided on the structural layer, and a plurality of etching units are arranged in the grids. The absorption spectrum has the characteristics of being capable of keeping stable absorption spectrum characteristics under different unit arrangements, high in absorption rate, multiple in absorption frequency points and high in quality factor.
Description
Technical Field
The invention belongs to the technical field of metamaterial absorbers, and relates to an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units.
Background
The terahertz metamaterial is an artificial material working at terahertz frequency, has supernormal electromagnetic characteristics, can be generally classified into metal metamaterials, all-dielectric metamaterials, carbon-based metamaterials and the like according to material attribute classification, can generate resonance under the incidence of terahertz waves with specific frequency or frequency range, has wide application prospect and application value in the application fields of sensing, detection, imaging, communication and the like, attracts much attention, and initiates research hot tide.
In the prior art, a metamaterial absorber is generally designed to have a periodic structure, and an overall structure of an absorber device is formed by continuously repeating an absorption unit structure to the periphery, wherein the size of the absorption unit structure is far smaller than an incident wavelength, so that resonance of the unit structure is caused after an incident wave contacts a metamaterial, and a resonance peak or a resonance valley appears on a transmission spectrum or a reflection spectrum or an absorption spectrum.
However, the strict periodicity increases the difficulty of product manufacturing, and also limits the generation of surface plasmon modes of different orders, and mode coupling can improve the quality factor of resonance under certain conditions, which is important for the application fields of sensing, detection and the like.
Therefore, how to realize a unit structure does not need to be arranged periodically, the absorption modes are more abundant and diversified, stable absorption spectrum characteristics can be kept under different unit arrangements, and the metamaterial absorber with the characteristics of high absorption rate, many absorption frequency points, high quality factors and the like has important significance.
Disclosure of Invention
The invention aims to provide an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units, which has the characteristics of capability of keeping stable absorption spectrum characteristics under the condition of arrangement of different units, high absorption rate, multiple absorption frequency points and high quality factors.
The invention adopts the technical scheme that an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units comprises a substrate layer and a structural layer, wherein the substrate layer and the structural layer are made of integrated highly-doped silicon materials, a plurality of grids are uniformly divided on the structural layer, and a plurality of etching units are arranged in the grids.
The invention is also characterized in that:
the etching units are one or more of square etching holes, rectangular etching holes, round etching holes, regular triangle etching holes, irregular triangle etching holes and oval etching holes, and a plurality of etching units are arranged in any grid in a non-overlapping and non-clinging manner.
At least one part of the etching pattern of any grid etching unit is divided into adjacent grids.
The thickness of the substrate layer is more than 110 μm and less than 300 μm.
The ratio of the thickness of the structure layer to the thickness of the substrate layer is greater than 1/6 and less than 1/2.
The ratio of the etching area of the etching unit to the grid area is larger than 1/20, and the ratio of the etching area of the etching unit to the grid area is smaller than 1/2.
The etching units are randomly distributed in the grid, and the etching units do not have periodicity in the grid.
The number of the grids is not less than 10.
The etched cells within the grid are all the same.
The geometric characteristics of the etched units in any grid are the same.
The invention has the beneficial effects that: the all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units has the characteristics of capability of keeping stable absorption spectrum characteristics under the condition of arrangement of different units, high absorption rate, multiple absorption frequency points and high quality factors. The absorption mode is more abundant and diversified, and the stable absorption spectrum characteristic can be kept under different random conditions.
Drawings
FIG. 1 is a schematic structural diagram of an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units according to the present invention;
FIG. 2 is a schematic diagram of meshing of an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units according to the present invention;
FIG. 3 is a schematic diagram of an etching structure in a grid of an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units according to the invention;
FIG. 4 is a schematic diagram of an etching unit structure of an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units according to the invention;
FIG. 5 shows absorption spectra of all-dielectric multi-band terahertz metamaterial absorbers with randomly distributed units according to different random situations.
In the figure, 1, a structural layer, 2, a substrate layer, 3, grids, 4, etching units, 5, square etching holes, 6, rectangular etching holes, 7, round etching holes, 8, regular triangle etching holes, 9, irregular triangle etching holes and 10, oval etching holes.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units, which comprises a substrate layer 2 and a structural layer 1, wherein as shown in figure 1, the substrate layer 2 and the structural layer 1 are made of integrated highly-doped silicon materials, a plurality of grids 3 are uniformly divided on the structural layer 1, and a plurality of etching units 4 are arranged in the grids 3. The etching units 4 are one or more of square etching holes 5, rectangular etching holes 6, round etching holes 7, regular triangle etching holes 8, irregular triangle etching holes 9 and oval etching holes 10, and a plurality of etching units 4 are arranged in any grid 3 in a non-overlapping and non-tight manner. At least a part of the etching pattern of the etching unit 4 in any grid 3 is divided into the adjacent grids 3. The thickness of the substrate layer 2 is larger than 110 μm, and the thickness of the substrate layer 2 is smaller than 300 μm. The ratio of the thickness of the structural layer 1 to the thickness of the backing layer 2 is greater than 1/6 and less than 1/2. The ratio of the etching area of the etching unit 4 to the area of the grid 3 is more than 1/20, and the ratio of the etching area of the etching unit 4 to the area of the grid 3 is less than 1/2. The etching units 4 are randomly distributed in the grid 3, and the etching units 4 do not have periodicity in the grid 3. The number of the grids 3 is not less than 10. The etched cells 4 within the grid 3 are all identical. The geometric features of the etched cells 4 in any grid 3 are the same.
As shown in FIG. 2, the invention provides an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units, wherein a structural layer 1 of the absorber is provided with uniformly divided grid 3 distribution, namely etching structures in different grid distribution form the structural layer 1, grids are not etched, and the grids only limit the range of the etching structures. Each grid in the divided grid distribution has the same size, the ratio of the length in the x direction to the length in the y direction is greater than 1/2 and less than 2, and the ratio of the length in the y direction to the length in the x direction is greater than 1/2 and less than 2.
As shown in FIG. 3, the all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units provided by the invention has the advantages that etching unit structures are randomly distributed in each grid of a structural layer, the random units in the grids adopt the same geometric size and geometric characteristics, the etching unit structures are not overlapped and not attached to each other, and at least a part of etching patterns of the etching unit structures are divided into the grids.
As shown in fig. 4, the area of the etching unit structure of the all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units provided by the invention is smaller than the area of 1/20 grids, and the etching unit structure comprises circular etching holes 7, square etching holes 5, regular triangle etching holes 8, other derived rectangular etching holes 6, oval etching holes 10, irregular triangle etching holes 9 and other uniform patterns.
As shown in fig. 5, in the case of five different random unit distributions, the all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units of the invention has absorption peaks with characteristics of high absorption rate and high quality factor near 0.8THz, 1.5THz and 2.2THz in the absorption spectrum of the terahertz frequency band, and corresponding spectra of different random modes are similar, so that the stability of the absorption characteristics is ensured, and the abundance of the resonance mode is increased.
The all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units has the characteristics of capability of keeping stable absorption spectrum characteristics under the condition of arrangement of different units, high absorption rate, multiple absorption frequency points and high quality factors. The absorption mode is more abundant and diversified, and the stable absorption spectrum characteristic can be kept under different random conditions.
Claims (10)
1. The utility model provides an all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units, includes substrate layer (2) and structural layer (1), characterized in that, substrate layer (2) and structural layer (1) high doping silicon material as an organic whole, evenly divided has a plurality of grids (3) on structural layer (1), all be provided with a plurality of sculpture units (4) in grid (3).
2. The all-dielectric multi-band terahertz metamaterial absorber with randomly distributed cells as claimed in claim 1, wherein the etching cells (4) are one or more of square etching holes (5), rectangular etching holes (6), circular etching holes (7), regular triangle etching holes (8), irregular triangle etching holes (9) and oval etching holes (10), and a plurality of etching cells (4) are arranged in any one of the grids (3) in a non-overlapping and non-tight manner.
3. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed cells as claimed in claim 1, wherein at least a part of the etching patterns of the etching cells (4) in any grid (3) are divided into the adjacent grids (3).
4. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed cells as claimed in claim 1, wherein the thickness of the substrate layer (2) is greater than 110 μm, and the thickness of the substrate layer (2) is less than 300 μm.
5. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed cells as claimed in claim 1, wherein the ratio of the thickness of the structural layer (1) to the thickness of the substrate layer (2) is greater than 1/6 and less than 1/2.
6. The all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units as claimed in claim 1, wherein the ratio of the etching area of the etching unit (4) to the area of the grid (3) is greater than 1/20, and the ratio of the etching area of the etching unit (4) to the area of the grid (3) is less than 1/2.
7. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units as claimed in claim 1, wherein the etching units (4) are randomly distributed in the grid (3), and the etching units (4) have no periodicity in the grid (3).
8. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units as claimed in claim 1, wherein the number of the grids (3) is not less than 10.
9. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed cells as claimed in claim 1, wherein the etched cells (4) in the grid (3) are all the same.
10. An all-dielectric multi-band terahertz metamaterial absorber with randomly distributed units as claimed in claim 1, wherein the geometric features of the etched units (4) in any one of the grids (3) are the same.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023080644A1 (en) * | 2021-11-03 | 2023-05-11 | 삼성전자 주식회사 | Atypical metasurface, and waveguide image combiner and augmented reality device using atypical metasurface |
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