CN113161374B - Display panel of under-screen camera and preparation method - Google Patents

Display panel of under-screen camera and preparation method Download PDF

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Publication number
CN113161374B
CN113161374B CN202110287763.9A CN202110287763A CN113161374B CN 113161374 B CN113161374 B CN 113161374B CN 202110287763 A CN202110287763 A CN 202110287763A CN 113161374 B CN113161374 B CN 113161374B
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layer
area
data line
line layer
camera
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CN113161374A (en
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赵星
于东亮
蔡红燕
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EverDisplay Optronics Shanghai Co Ltd
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EverDisplay Optronics Shanghai Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a display panel of an under-screen camera and a preparation method thereof, wherein the display panel is provided with a display area, a camera shooting area and a transition area which surrounds the camera shooting area and is transited to the display area, and the display panel sequentially comprises the following components from bottom to top: the device comprises a grid insulating layer, a first contact hole layer, a second contact hole layer, a first data line layer, a protective layer, a first flat layer, a second data line layer and a second flat layer; the position for arranging the first transparent conducting wire is reserved on the same layer of the first data line layer, the position for arranging the second transparent conducting wire is reserved on the same layer of the second data line layer, and the position for arranging the third transparent conducting wire is reserved on the same layer of the protective layer. By the array design of the camera area and the transition area, the camera under the screen is realized under the condition of ensuring that the pixel density is not reduced, and the position for arranging the multilayer transparent conducting wire is reserved, so that the process flexibility is realized.

Description

Display panel of under-screen camera and preparation method
Technical Field
The invention relates to the technical field of an under-screen camera, in particular to a display panel of the under-screen camera and a preparation method thereof.
Background
With the technical progress and the increase of the demand of consumers on large-screen mobile phones, mobile phone manufacturers are constantly striving to improve the screen occupation ratio of the mobile phones from so-called borderless mobile phones to bang screens, then to the design of water drop screens and lifting cameras, and the development of folding screens, so that the development of the mobile phones to the full-screen is almost never spent. While under-screen photography is considered to be the ultimate solution for a true full-screen. Compared with a Liu Hai screen and a dripping screen, the front-mounted camera is not difficult to place on the inner layer of the screen, and how to solve the light transmission problem is difficult, namely, the functions of self-shooting, face recognition and the like of the front-mounted camera are not influenced while the whole screen is realized.
Along with the development of the comprehensive screen technology, the camera technology under the screen places the camera under the display screen, and meanwhile, the display screen of the camera area can still display, so that the comprehensive screen display technology is in the true sense. The COD (under screen camera) products on the market at present are usually used as pixel display in a COD region part due to process limitations, and the other part is transparent, so that the display PPI in the COD region is insufficient, and the display effect is poor.
Disclosure of Invention
The invention provides a display panel of an off-screen camera and a preparation method thereof, and aims to solve the technical problems that the area of the off-screen camera in the prior art is insufficient in PPI display, poor in display effect and the like.
A display panel of an off-screen camera, comprising:
a display area;
the lower screen image pick-up area is positioned at any position of the display area;
the under-screen camera area includes:
a camera area;
the transition area is at least arranged on one side of the camera shooting area and is connected with the camera shooting area;
the electrode pattern layer is positioned in the camera shooting area;
the plurality of conducting layers are arranged in the image pickup area and/or the transition area;
a plurality of dielectric layers for isolating the plurality of conductive layers;
the plurality of conducting layers and the plurality of dielectric layers in the image pickup area are made of transparent materials, and a driving circuit of the image pickup area is arranged in the transition area and is connected with the plurality of conducting layers through the electrode pattern layer.
Further, the dielectric layer comprises a gate insulating layer, a first contact hole layer, a second contact hole layer, a protective layer, a first flat layer and a second flat layer, and the conductive layer comprises a first data line layer, a second data line layer, a first conductive line layer, a second conductive line layer and a third conductive line layer;
the gate insulating layer extends from the image pickup region to a transition region;
the first contact hole layer is arranged on the grid electrode insulating layer and extends from the image pick-up region to the transition region;
the second contact hole layer is arranged on the first contact hole layer and extends from the camera area to the transition area;
the first data line layer is arranged on the second contact hole layer and extends from the camera shooting area to the transition area;
the protective layer is arranged on the first data line layer and extends from the camera shooting area to the transition area;
the first flat layer is arranged on the protective layer and extends from the image pickup area to the transition area;
the second data line layer is arranged on the first flat layer, and the second data line layer is arranged in the image pick-up area and the transition area;
the second planarization layer is disposed on the second data line layer and the first planarization layer;
the protection layer is arranged on the first data line layer, the second data line layer and the third data line layer, wherein the first conductive line layer is arranged on the same layer of the first data line layer, the second conductive line layer is arranged on the same layer of the second data line layer, and the third conductive line layer is arranged on the same layer of the protection layer;
the second conductive line layer penetrates the imaging region and the transition region.
Further, the conductive layer further comprises a fourth conductive line layer;
the electrode pattern layer is positioned above the second flat layer;
the fourth conductive wire layer penetrates through the image pick-up area and the transition area and is on the same layer as the electrode pattern layer in the image pick-up area;
the fourth conductive line layer at the transition region is on the second planar layer.
Further, the second flat layer located in the image pickup region has a contact hole that brings the electrode pattern layer into contact with the second data line layer.
Further, in the image pickup area, a light sensing side layer and a pixel area are arranged on the electrode pattern layer;
the light sensing side layer and the pixel region are disposed on the fourth conductive line layer of the transition region.
Further, the conductive layer further comprises a fifth conductive line layer;
providing the fifth conductive line layer in an interlayer between the first and second contact hole layers;
the fifth conductive line layer penetrates through the image pickup area and the transition area;
and the second contact hole layers of the camera area and the transition area are respectively provided with a contact hole for enabling the first data line layer to be in contact with the fifth conductive line layer.
Further, a buffer layer is arranged on the lower layer of the gate insulating layer.
Furthermore, the image pickup region and the transition region are respectively provided with a contact hole which penetrates through the first contact hole layer, the second contact hole layer and the gate insulating layer and is used for contacting the first data line layer and the buffer layer.
Further, the protective layers of the image pickup region and the transition region are respectively provided with contact holes for contacting the first data line layer and the second data line layer.
A preparation method of a display panel of an off-screen camera is used for preparing the display panel of the off-screen camera, the display panel is provided with a display area and an off-screen camera area, and the off-screen camera area is located at any position of the display area, and the preparation method comprises the following steps:
a1, manufacturing a grid insulation layer, and extending from the image pickup area to a transition area;
step A2, manufacturing a first contact hole layer, arranging the first contact hole layer on the grid electrode insulating layer and extending from the image pickup area to the transition area;
step A3, manufacturing a second contact hole layer, arranging the second contact hole layer on the first contact hole layer, and extending from the camera area to a transition area;
step A4, a first data line layer is manufactured, is arranged on the second contact hole layer and extends from the camera shooting area to the transition area, and a first conducting line layer is manufactured on the same layer of the first data line layer;
step A5, manufacturing a protective layer, wherein the protective layer is arranged on the first data line layer, extends from the camera shooting area to the transition area, and is manufactured into a third conductive line layer on the same layer of the protective layer;
step A6, manufacturing a first flat layer, arranging the first flat layer on the protective layer, and extending from the image pickup area to the transition area;
step A7, a second data line layer is manufactured and arranged on the first flat layer, the second data line layer is arranged in both the camera area and the transition area, and a second conductive line layer is manufactured on the same layer of the second data line layer;
step A8, manufacturing a second flat layer, and arranging the second flat layer on the second data line layer and the first flat layer;
wherein the second conductive line layer penetrates the image pickup region and the transition region.
The beneficial technical effects of the invention are as follows: by the array design of the camera area and the transition area, the camera under the screen is realized under the condition of ensuring that the pixel density is not reduced, and the position for arranging the multilayer transparent conducting wire is reserved, so that the process flexibility is realized.
Drawings
Fig. 1 is a schematic diagram of a position of a video area under a display panel of a video camera according to the present invention in a display area;
FIG. 2 is a process diagram of a transition region of a display panel of an off-screen camera according to an embodiment of the present invention;
FIG. 3 is a process diagram of a camera area of an embodiment of a display panel of an off-screen camera of the present invention;
FIG. 4 is a diagram of a transition region process structure of another embodiment of a display panel of an off-screen camera according to the present invention;
fig. 5 is a process structure diagram of a camera area of another embodiment of a display panel of an under-screen camera according to the present invention;
FIG. 6 is a schematic diagram of a layout structure of a transition region of a display panel of an off-screen camera according to the present invention;
FIG. 7 is a schematic diagram of a layout structure of a camera area of a display panel of an off-screen camera according to the present invention;
fig. 8 is a flowchart illustrating steps of a method for manufacturing an under-screen camera according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
Referring to fig. 1 to 7, a display panel of an off-screen camera includes:
a display area (AA area);
the lower screen image pick-up area is positioned at any position of the display area;
the under-screen camera area includes:
a camera area (COD area);
the transition area is at least arranged on one side of the camera shooting area and is connected with the camera shooting area;
the electrode pattern layer is positioned in the camera shooting area;
the plurality of conducting layers are arranged in the image pickup area and/or the transition area;
a plurality of dielectric layers for isolating the plurality of conductive layers;
the plurality of conducting layers and the plurality of dielectric layers in the image pickup area are made of transparent materials, and a driving circuit of the image pickup area is arranged in the transition area and is connected with the plurality of conducting layers through the electrode pattern layer.
Further, in the above-mentioned case,
the dielectric layer comprises a grid insulating layer (GI), a first contact hole layer (CT 1), a second contact hole layer (CT 2), a protective layer (BP), a first flat layer (PLN 1) and a second flat layer (PLN), the conductive layer comprises a first data line layer (DL 1), a second data line layer (DL 2), a first conductive line layer (ITO 1), a second conductive line layer (ITO 2) and a third conductive line layer (ITO 3),
a gate insulating layer (GI) extending from the imaging region to the transition region;
a first contact hole layer (CT 1) is arranged on the gate insulation layer (GI) and extends from the image pick-up region to the transition region;
the second contact hole layer (CT 2) is arranged on the first contact hole layer (CT 1) and extends from the camera area to the transition area;
the first data line layer (DL 1) is arranged on the second contact hole layer (CT 2) and extends from the camera area to the transition area;
the protective layer (BP) is arranged on the first data line layer (DL 1) and extends from the camera shooting area to the transition area;
the first flat layer (PLN 1) is arranged on the protective layer (BP) and extends from the camera shooting area to the transition area;
the second data line layer (DL 2) is arranged on the first flat layer (PLN 1), and the second data line layer (DL 2) is arranged in the camera area and the transition area;
a second flat layer (PLN) is arranged on the second data line layer (DL 2) and the first flat layer (PLN 1);
wherein, a first conductive line layer (ITO 1) is arranged on the same layer of the first data line layer (DL 1), a second conductive line layer (ITO 2) is arranged on the same layer of the second data line layer (DL 2), and a third conductive line layer (ITO 3) is arranged on the same layer of the protection layer (BP);
the second conductive line layer (ITO 2) penetrates the image pickup region and the transition region.
Further, among them, as a preferred embodiment, the electrode pattern layer is an anode pattern layer (AE).
Further, the conducting layer also comprises a fourth conducting wire layer;
the image pick-up area is provided with an electrode pattern layer (AE) which is positioned above the second flat layer (PLN);
a fourth conductive line layer (ITO 4) penetrates through the image pick-up area and the transition area, and is on the same layer as the electrode pattern layer (AE) in the image pick-up area;
the fourth layer of conductive lines (ITO 4) at the transition region is on the second Planar Layer (PLN).
Namely, a fourth conductive line layer (ITO 4) is arranged on the same layer as the electrode pattern layer (AE) and in the transition region;
further, the second Planarization Layer (PLN) located in the imaging area has a contact hole for contacting the electrode pattern layer (AE) and the second data line layer (DL 2).
Further, in the imaging area, a light sensing side layer (PS) and a pixel area (SP) are arranged on the electrode pattern layer (AE);
in the transition area, a light sensing side layer (PS) and a pixel area (SP) are arranged on a layer where a position for arranging a fourth conductive wire layer (ITO 4) is reserved.
Further, as a preferred embodiment of the present invention, the conductive layer further includes a fifth conductive line layer, and the fifth conductive line layer (ITO 5) is provided in an interlayer between the first contact hole layer (CT 1) and the second contact hole layer (CT 2);
the fifth conductive wire layer (ITO 5) penetrates through the camera shooting area and the transition area;
the second contact hole layers (CT 2) of the camera area and the transition area are respectively provided with contact holes for enabling the first data line layer (DL 1) to be in contact with the fifth conductive line layer (ITO 5).
Further, a buffer layer (PS) is provided below the gate insulating layer (GI).
Further, as another preferred embodiment of the present invention, the image pickup region and the transition region are provided with contact holes penetrating the three layers of the first contact hole layer (CT 1), the second contact hole layer (CT 2) and the gate insulating layer (GI) and for contacting the first data line layer (DL 1) and the buffer layer (PS), respectively.
Further, the protective layers (BP) of the image pickup region and the transition region are respectively provided with contact holes for contacting the first data line layer (DL 1) and the second data line layer (DL 2).
Further, the gate insulating layer (GI), the protective layer (BP), the first planar layer (PLN 1), and the second Planar Layer (PLN) are all made of transparent materials.
Specifically, the present invention provides an array design without reducing PPI (pixel density) in an image pickup region (COD region) which can be disposed at an arbitrary position in a display region (AA region). The transition region is provided with a drive circuit of a COD region, and the outer layer of the electrode pattern region of the COD region except an electrode pattern layer (AE) is made of transparent material. The image pick-up area and the transition area are both provided with a light sensing side layer (PS) and a pixel area (SP), so that the pixel density cannot be reduced.
The signal contact of the COD region and the signal contact of the anode are realized by a conductive wire layer/a data line electrode pattern layer. In the invention, multiple layers of conductive wires (such as ITO wires) are arranged, and the ITO MASK design can realize the compatibility of multiple layers of ITO through the contact holes, thereby realizing the process flexibility.
Specifically, the protective layer (BP) is an organic photoresist layer, and preferably, the material of the protective layer (BP) is SiO, siN, or the like.
Referring to fig. 8, the present invention further provides a method for manufacturing a display panel of an off-screen camera, which is used for manufacturing the display panel of the off-screen camera, where the display panel has a display area and an off-screen camera area, and the off-screen camera area is located at any position of the display area, and the method includes the following steps:
step A1, manufacturing a grid electrode insulating layer (GI) extending from an image pick-up region to a transition region;
a2, manufacturing a first contact hole layer (CT 1) which is arranged on the gate insulation layer (GI) and extends from the image pick-up region to the transition region;
a3, manufacturing a second contact hole layer (CT 2), arranging on the first contact hole layer (CT 1), and extending from the camera area to the transition area;
step A4, manufacturing a first data line layer (DL 1), arranging the first data line layer (DL 1) on a second contact hole layer (CT 2), extending from a camera area to a transition area, and arranging a first transparent conductive line layer (ITO 1) on the same layer of the first data line layer (DL 1);
step A5, manufacturing a protective layer (BP), arranging the protective layer (BP) on the first data line layer (DL 1), extending from the camera shooting area to the transition area, and manufacturing a third conductive line layer (ITO 3) on the same layer of the protective layer (BP);
a6, manufacturing a first flat layer (PLN 1), arranging on the protective layer (BP), and extending from the camera shooting area to the transition area;
step A7, manufacturing a second data line layer (DL 2), arranging the second data line layer (DL 2) on the first flat layer (PLN 1), arranging the second data line layer (DL 2) in the camera shooting area and the transition area, and manufacturing a second conductive line layer (ITO 2) on the same layer of the second data line layer (DL 2);
step A8, manufacturing a second flat layer (PLN) and arranging the second flat layer (PLN) on the second data line layer (DL 2) and the first flat layer (PLN 1);
wherein the second conductive line layer (ITO 2) runs through the image pick-up region and the transition region.
Specifically, the first conductive line layer, the second conductive line layer, the third conductive line layer, the fourth conductive line layer and the fifth conductive line layer are all made of ITO.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (9)

1. The utility model provides a display panel of camera under screen which characterized in that includes:
a display area;
the lower screen image pick-up area is positioned at any position of the display area;
the under-screen camera area includes:
a camera area;
the transition area is at least arranged on one side of the camera shooting area and is connected with the camera shooting area;
the electrode pattern layer is positioned in the camera shooting area;
the conducting layers are arranged in the image pick-up area and/or the transition area;
a plurality of dielectric layers for isolating the plurality of conductive layers;
the plurality of conducting layers and the plurality of dielectric layers in the image pickup area are made of transparent materials, and a driving circuit of the image pickup area is arranged in the transition area and is connected with the plurality of conducting layers through the electrode pattern layer;
the dielectric layer comprises a grid electrode insulating layer, a first contact hole layer, a second contact hole layer, a protective layer, a first flat layer and a second flat layer, and the conducting layers comprise a first data line layer, a second data line layer, a first conducting line layer, a second conducting line layer and a third conducting line layer;
the gate insulating layer extends from the image pickup region to a transition region;
the first contact hole layer is arranged on the gate insulating layer and extends from the image pick-up region to the transition region;
the second contact hole layer is arranged on the first contact hole layer and extends from the camera area to the transition area;
the first data line layer is arranged on the second contact hole layer and extends from the camera area to the transition area;
the protective layer is arranged on the first data line layer and extends from the camera shooting area to the transition area;
the first flat layer is arranged on the protective layer and extends from the image pickup area to the transition area;
the second data line layer is arranged on the first flat layer, and the second data line layer is arranged in the image pick-up area and the transition area;
the second planarization layer is disposed on the second data line layer and the first planarization layer;
the protection layer is arranged on the first data line layer, the second data line layer and the third data line layer, wherein the first conductive line layer is arranged on the same layer of the first data line layer, the second conductive line layer is arranged on the same layer of the second data line layer, and the third conductive line layer is arranged on the same layer of the protection layer;
the second conductive line layer penetrates the image pickup region and the transition region.
2. The display panel of an under-screen camera of claim 1, wherein the conductive layer further comprises a fourth conductive line layer;
the electrode pattern layer is positioned above the second flat layer;
the fourth conductive wire layer penetrates through the image pickup area and the transition area and is on the same layer as the electrode pattern layer in the image pickup area;
the fourth conductive line layer at the transition region is on the second planar layer.
3. The display panel of an under-screen camera according to claim 2, wherein the second flat layer located in the image pickup region has a contact hole that contacts the electrode pattern layer and the second data line layer.
4. The display panel of an underscreen camera according to claim 2, wherein in the image pickup area, a light sensing layer and a pixel area are disposed on the electrode pattern layer;
and the light sensing layer and the pixel region are arranged on the fourth conductive wire layer of the transition region.
5. The display panel of an under-screen camera of claim 1, wherein the conductive layer further comprises a fifth conductive line layer;
providing the fifth conductive line layer in an interlayer between the first and second contact hole layers;
the fifth conductive line layer penetrates through the image pickup area and the transition area;
the second contact hole layers of the camera area and the transition area are respectively provided with a contact hole for enabling the first data line layer to be in contact with the fifth conductive line layer.
6. The display panel of an under-screen camera according to claim 1, wherein a buffer layer is further disposed under the gate insulating layer.
7. The display panel of an off-screen camera according to claim 6, wherein the image pickup region and the transition region are respectively provided with contact holes which penetrate the first contact hole layer, the second contact hole layer and the gate insulating layer and are used for contacting the first data line layer and the buffer layer.
8. The display panel of an under-screen camera according to claim 1, wherein the protective layers of the image pickup region and the transition region are respectively provided with contact holes for contacting the first data line layer and the second data line layer.
9. A method for manufacturing a display panel of an off-screen camera, which is used for manufacturing the display panel of the off-screen camera according to any one of claims 2 to 8, wherein the display panel has a display area and an off-screen camera area, and the off-screen camera area is located at any position of the display area, and the method comprises the following steps:
a1, manufacturing a grid insulation layer, and extending from the image pickup area to a transition area;
step A2, manufacturing a first contact hole layer, arranging the first contact hole layer on the grid insulation layer and extending from the image pickup area to the transition area;
step A3, manufacturing a second contact hole layer, arranging the second contact hole layer on the first contact hole layer, and extending from the camera area to a transition area;
step A4, manufacturing a first data line layer, arranging the first data line layer on the second contact hole layer, extending from the camera shooting area to the transition area, and manufacturing a first conductive line layer on the same layer of the first data line layer;
step A5, manufacturing a protective layer, wherein the protective layer is arranged on the first data line layer, extends from the camera shooting area to the transition area, and is manufactured into a third conductive line layer on the same layer of the protective layer;
step A6, manufacturing a first flat layer, arranging the first flat layer on the protective layer and extending from the image pickup area to the transition area;
step A7, a second data line layer is manufactured and arranged on the first flat layer, the second data line layer is arranged in both the camera area and the transition area, and a second conductive line layer is manufactured on the same layer of the second data line layer;
step A8, manufacturing a second flat layer, and arranging the second flat layer on the second data line layer and the first flat layer;
wherein the second conductive line layer penetrates the image pickup region and the transition region.
CN202110287763.9A 2021-03-17 2021-03-17 Display panel of under-screen camera and preparation method Active CN113161374B (en)

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