CN111725276A - Light emitting device, display device and manufacturing method of light emitting device - Google Patents

Light emitting device, display device and manufacturing method of light emitting device Download PDF

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CN111725276A
CN111725276A CN202010528403.9A CN202010528403A CN111725276A CN 111725276 A CN111725276 A CN 111725276A CN 202010528403 A CN202010528403 A CN 202010528403A CN 111725276 A CN111725276 A CN 111725276A
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layer
emitting device
light
transparent electrode
electrode signal
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CN111725276B (en
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丁玎
方亮
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract

The embodiment of the application discloses a light-emitting device, a display device and a preparation method of the light-emitting device. This embodiment is through setting up the first transparent electrode signal layer of one deck between the functional area under the display area of display screen and the screen for reduced metal electrode layer in the functional area structure under the screen, consequently increased the light penetration rate of functional area under this screen, make under this screen under the functional area under the circumstances of guaranteeing normal display effect, can also improve the light penetration rate under this screen, thereby realize high screen account ratio and the combination of sensing function under the screen.

Description

Light emitting device, display device and manufacturing method of light emitting device
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a display device and a preparation method of the light-emitting device.
Background
An OLED (Organic Light Emitting Display) has the characteristics of low power consumption of automatic Light emission, fast response speed, higher contrast, wider viewing angle, and the like.
A conventional transparent display is a top-emission OLED device, which includes a substrate, which may be a flexible substrate, a TFT (Thin Film Transistor) back plate layer disposed on a substrate, and a reflective layer disposed on the TFT back plate layer.
With the rapid development of the information era, the manufacturing industries of mobile phones, computers and the like also rapidly develop, the functions of the mobile phones are more comprehensive nowadays, the screen occupation ratio of the mobile phones is extremely important in the display function, and therefore the concept of a functional area under the screen is presented, namely, the sensing functions of camera shooting, distance sensing and the like are arranged below the screen, but because high-density metal routing wires exist in a TFT (thin film transistor) structure in the screen, the metal routing wires have a reflection effect on light, and the normal working performance of light sensing is greatly influenced.
Disclosure of Invention
The embodiment of the application provides a light-emitting device, a display device and a manufacturing method of the light-emitting device, and a first transparent electrode signal layer is arranged between a display area of a display screen and a functional area under the screen, so that a metal electrode layer is reduced in a functional area structure under the screen, the light penetration rate of the functional area under the screen is increased, the functional area under the screen can ensure the normal display effect, the light penetration rate under the screen can be improved, and the combination of high screen occupation ratio and sensing function under the screen is realized.
In order to solve the above-mentioned problems, the present application provides, in a first aspect, a light emitting device provided with a display area and an off-screen functional area; the display region comprises a metal electrode layer; the under-screen functional area includes: the passivation layer is arranged on the array substrate; a first planarization layer disposed on the passivation layer; a first transparent electrode signal layer disposed on the first planarization layer, wherein the first transparent electrode signal layer is electrically connected to the metal electrode layer through the first planarization layer and the passivation layer; the second flat layer is arranged on the first flat layer and covers the first transparent electrode signal layer; and the anode is arranged on the second flat layer, penetrates through the second flat layer and is electrically connected with the first transparent electrode signal layer.
In some embodiments, the light emitting device further comprises a light emitting device layer disposed on the second planarization layer and covering the anode.
In some embodiments, the light emitting device layer comprises:
a pixel defining layer disposed on the second planarization layer and covering the anode;
and the second transparent electrode signal layer is arranged on the pixel defining layer, penetrates through the pixel defining layer, the second flat layer, the first flat layer and the passivation layer and is electrically connected with the metal electrode layer.
In some embodiments, the light emitting device layer further comprises:
and the light resistance gap layer is arranged on the pixel defining layer and covers the second transparent electrode signal layer.
In some embodiments, the pixel defining layer is provided with a plurality of grooves; the light emitting device layer further includes: and the plurality of sub-pixels are arranged in the grooves and are electrically connected with the anode.
In some embodiments, the sub-pixel is any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
In a second aspect, the present application provides a display device, comprising the light emitting device and a sensor, wherein the sensor is disposed in the functional region under the screen.
In some embodiments, the sensor comprises one or a combination of a camera sensor, a breathing light sensor, a distance sensor, a fingerprint scanner sensor, a microphone sensor, or a transparent antenna sensor.
In a third aspect, the present application provides a method for manufacturing a light emitting device, the light emitting device being provided with a display region and an off-screen functional region, the display region including a metal electrode layer, the method comprising:
preparing an array substrate;
preparing a passivation layer on the array substrate;
preparing a first flat layer on the passivation layer;
preparing a first transparent electrode signal layer on the first flat layer, wherein the first transparent electrode signal layer is electrically connected with the metal electrode layer of the display region through the first flat layer and the passivation layer;
preparing a second flat layer on the first flat layer, wherein the second flat layer covers the first transparent electrode signal layer;
preparing an anode on the second planar layer, wherein the anode is electrically connected to the first transparent electrode signal layer through the second planar layer
In some embodiments, after the preparing the anode on the second planarization layer, the method comprises:
preparing a pixel defining layer on the second flat layer;
and preparing a second transparent electrode signal layer on the pixel defining layer, wherein the second transparent electrode signal layer is electrically connected with the metal electrode layer through the pixel defining layer, the second flat layer, the first flat layer and the passivation layer.
The embodiment of the application provides a light-emitting device, which is provided with a display area and a lower screen functional area; the display region includes a metal electrode layer; the under-screen functional area includes: the passivation layer is arranged on the array substrate; a first planarization layer disposed on the passivation layer; the first transparent electrode signal layer is arranged on the first flat layer, and the first transparent electrode signal layer penetrates through the first flat layer and the passivation layer to be electrically connected with the metal electrode layer; the second flat layer is arranged on the first flat layer and covers the first transparent electrode signal layer; and the anode is arranged on the second flat layer and penetrates through the second flat layer to be electrically connected with the first transparent electrode signal layer. Be different from prior art, this embodiment sets up the first transparent electrode signal layer of one deck between the functional area through the display area of display screen and screen down for reduced metal electrode layer in the functional area structure under the screen, consequently increased the light penetration rate of functional area under this screen, make under this screen the functional area under the circumstances of guaranteeing normal display effect, can also improve the light penetration rate under this screen, thereby realize high screen account for and screen down sensing function's combination.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of one embodiment of a cross section of a light-emitting device in an embodiment of the present application;
fig. 2 is a schematic flow chart of an embodiment of a method for manufacturing a light emitting device according to an embodiment of the present disclosure;
fig. 3(a) is a schematic structural diagram of a light emitting device corresponding to step 201 in the embodiment of the present application;
fig. 3(b) is a schematic structural diagram of a light-emitting device corresponding to step 202 in the embodiment of the present application;
fig. 3(c) is a schematic structural diagram of a light-emitting device corresponding to step 203 in the embodiment of the present application;
fig. 3(d) is a schematic structural diagram of a light-emitting device corresponding to step 204 in the embodiment of the present application;
fig. 3(e) is a schematic structural diagram of a light emitting device corresponding to step 205 in the embodiment of the present application;
fig. 3(f) is a schematic structural diagram of a light-emitting device corresponding to step 206 in the embodiment of the present application;
fig. 3(g) is a schematic structural diagram of a light emitting device corresponding to a pixel defining layer prepared in the embodiment of the present application;
FIG. 3(h) is a schematic structural diagram of a light emitting device corresponding to an anode prepared in the embodiment of the present application;
fig. 4 is a schematic structural diagram of another embodiment of a cross section of a light-emitting device in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
With the rapid development of the information era, the manufacturing industries of mobile phones, computers and the like also rapidly develop, the functions of the mobile phones are more comprehensive nowadays, the screen occupation ratio of the mobile phones is extremely important in the display function, and therefore the concept of a functional area under the screen is presented, namely, the sensing functions of camera shooting, distance sensing and the like are arranged below the screen, but because high-density metal routing wires exist in a TFT (thin film transistor) structure in the screen, the metal routing wires have a reflection effect on light, and the normal working performance of light sensing is greatly influenced.
Based on this, embodiments of the present application provide a light emitting device, a display device, and a method of manufacturing the light emitting device, which are described in detail below.
First, in an embodiment of the present application, a light emitting device is provided, where the light emitting device is provided with a display area and a function area under a screen; the display region includes a metal electrode layer; the under-screen functional area includes: the passivation layer is arranged on the array substrate; a first planarization layer disposed on the passivation layer; the first transparent electrode signal layer is arranged on the first flat layer, and the first transparent electrode signal layer penetrates through the first flat layer and the passivation layer to be electrically connected with the metal electrode layer; the second flat layer is arranged on the first flat layer and covers the first transparent electrode signal layer; and the anode is arranged on the second flat layer and penetrates through the second flat layer to be electrically connected with the first transparent electrode signal layer.
As shown in fig. 1 to 4, fig. 1 is a schematic structural diagram of an embodiment of a cross section of a light emitting device in an embodiment of the present application, wherein the light emitting device 10 is provided with a display area 101 and an off-screen functional area 102; the display region 101 includes a metal electrode layer 103; the off-screen functional area 102 includes: a passivation layer 105 disposed on the array substrate 104; a first planarization layer 106 disposed on the passivation layer 105; a first transparent electrode signal layer 107 disposed on the first planarization layer 106, wherein the first transparent electrode signal layer 107 is electrically connected to the metal electrode layer 103 through the first planarization layer 106 and the passivation layer 105; a second planarization layer 108 disposed on the first planarization layer 106 and covering the first transparent electrode signal layer 107; and the anode 109 is arranged on the second flat layer 108, and the anode 109 penetrates through the second flat layer 108 and is electrically connected with the first transparent electrode signal layer 107.
It should be noted that the light emitting device 10 is provided with a display area 101 and an off-screen functional area 102, specifically, the display panel is divided into an effective display area and a non-effective display area, the effective display area is capable of displaying a picture, in order to distinguish the internal structure of the off-screen functional area 102, in the embodiment of the present application, the effective display area includes the display area 101 and the off-screen functional area 102, and the off-screen functional area 102 also has a normal display function.
Further, only the above structure is described in the above embodiment of the light emitting device 1010, and it is understood that, in addition to the above structure, the light emitting device 1010 of the embodiment of the present application may further include any other necessary structure as needed, for example, a substrate, a buffer layer, a gate electrode, a gate insulating layer, an interlayer dielectric layer (ILD), and the like, and the specific description is not limited herein.
In the embodiment of the application, the first transparent electrode signal layer 107 is arranged between the display area 101 and the screen lower functional area 102 of the display screen, so that the metal electrode layer 103 is reduced in the structure of the screen lower functional area 102, and therefore, the light penetration rate of the screen lower functional area 102 is increased, and the light penetration rate of the screen lower functional area 102 is increased under the condition that the normal display effect is ensured, so that the combination of high screen occupation ratio and screen lower sensing function is realized.
In some embodiments, in order to satisfy both the display and the sufficient light transmittance of the functional region 102 under the screen, the material of the first transparent electrode signal layer 107 has high light transmittance and electric signal transmission performance, for example, the first transparent electrode signal layer 107 may be indium tin oxide, which is not limited herein, as long as the above performance is satisfied.
In some embodiments, the light emitting device 10 further comprises a light emitting device layer disposed on the second planar layer 108 and covering the anode 109.
In some embodiments, as shown in fig. 1, a light emitting device layer comprises:
a pixel defining layer 1010 disposed on the second planarization layer 108 and covering the anode 109;
a second transparent electrode signal layer 1011 disposed on the pixel defining layer 1010, wherein the second transparent electrode signal layer 1011 penetrates through the pixel defining layer 1010, the second planarization layer 108, the first planarization layer 106 and the passivation layer 105 to be electrically connected to the metal electrode layer 103, wherein the second transparent electrode signal layer 1011 has a high light transmittance and an electrical signal transmission performance, and specifically, the material of the second transparent electrode signal layer 1011 may be the same as or different from the material of the first transparent electrode signal layer 107.
Wherein, since in the actual circuit structure, the second transparent electrode signal layer can be divided into a plurality of partially transparent electrode signal layers, as shown in fig. 4, specifically, the second transparent electrode signal layer 1011 can be composed of a third transparent electrode signal layer 401 and a fourth transparent electrode signal layer 402, the third transparent electrode signal layer 401 can be prepared in the same process step as the first transparent electrode signal layer 107, that is, the third transparent electrode layer 401 is prepared on the passivation layer 105 and connected to the metal electrode layer 103 through the passivation layer 105, and then the fourth transparent electrode signal layer 402 is prepared on the pixel defining layer 1010, the fourth transparent electrode signal layer 402 is connected to the third transparent electrode signal layer through the pixel defining layer 1010, the second flat layer 108 and the first flat layer 106, so that the fourth transparent electrode signal layer 402 is connected to the third transparent electrode signal layer 401 to form the complete second transparent electrode signal layer 1011, the second transparent electrode signal layer 1011 is electrically connected to the metal electrode layer 103 through the pixel defining layer 1010, the second planarization layer 108, the first planarization layer 106, and the passivation layer 105.
In the embodiment of the present application, the second transparent electrode signal layer 1011 is prepared on the pixel definition layer 1010, so that the distribution density of the first transparent electrode signal layer 107 can be effectively reduced, and the phenomena of electric leakage, short circuit and the like caused by the overlarge distribution density of the first transparent electrode signal layer 107 can be prevented, meanwhile, as the second transparent electrode signal layer 1011 is prepared on the pixel definition layer 1010, compared with a structure arranged below the pixel definition layer 1010, one flat layer can be prepared less, so that the preparation process difficulty is reduced, and the preparation cost is reduced.
In some embodiments, as shown in fig. 1, the light emitting device layer further includes a photo spacer layer 1012 disposed on the pixel defining layer 1010 and covering the second transparent electrode signal layer 1011.
In this embodiment, the photo spacer layer 1012 not only satisfies the light modulation function, but also insulates the second transparent electrode signal layer 1011.
In some embodiments, the pixel defining layer 1010 has a plurality of grooves; the light emitting device layer further includes: and a plurality of sub-pixels disposed in the grooves and electrically connected to the anode 109.
In some embodiments, the sub-pixel is any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
In order to better implement the light emitting device 10 in the embodiment of the present application, on the basis of the light emitting device 10, the embodiment of the present application further provides a display device, where the display device includes the light emitting device 10 of the above embodiment and a sensor, where the sensor is disposed in the under-screen functional region 102, and specifically, the display device may be a mobile phone, a computer, and a television, which is not limited in this application, and is determined according to actual circumstances.
This embodiment sets up the first transparent electrode signal layer 107 of one deck between functional area 102 under the display area 101 and the screen of display screen for functional area 102 has reduced metal electrode layer 103 under the screen in the structure, consequently, the light penetration rate of functional area 102 under this screen has been increased, make functional area 102 under this screen under the circumstances of guaranteeing normal display effect, can also improve the light penetration rate of this screen lower district, thereby realize the combination of sensing function under high screen occupation of percentage and the screen, improve this display device's comprehensive properties.
In some embodiments, the sensor comprises one or a combination of a camera sensor, a breathing light sensor, a distance sensor, a fingerprint scanner sensor, a microphone sensor, or a transparent antenna sensor.
In order to better implement the light emitting device 10 in the embodiment of the present application, on the basis of the light emitting device 10, the embodiment of the present application further provides a method for manufacturing the light emitting device, the light emitting device 10 is provided with a display region 101 and a functional region 102 under a screen, the display region 101 includes a metal electrode layer 103, and the method includes: preparing an array substrate 104; preparing a passivation layer 105 on the array substrate 104; preparing a first planarization layer 106 on the passivation layer 105; preparing a first transparent electrode signal layer 107 on the first planarization layer 106, wherein the first transparent electrode signal layer 107 is electrically connected to the metal electrode layer 103 of the display region 101 through the first planarization layer 106 and the passivation layer 105; preparing a second planarization layer 108 on the first planarization layer 106, wherein the second planarization layer 108 covers the first transparent electrode signal layer 107; an anode 109 is prepared on the second planarization layer 108, wherein the anode 109 is electrically connected to the first transparent electrode signal layer 107 through the second planarization layer 108.
Referring to fig. 2 and fig. 3(a) to 3(f), fig. 2 is a schematic flow chart of an embodiment of a method for manufacturing a light emitting device according to an embodiment of the present application, in which the light emitting device 10 includes a display region 101 and a sub-screen functional region 102, the display region 101 includes a metal electrode layer 103, and the method includes:
201. an array substrate is prepared.
In this embodiment, as shown in fig. 3(a), the array substrate 104 in the display function region includes a substrate 1013, where the substrate 1013 may be a flexible substrate or a rigid substrate, and a buffer layer 1014 is further prepared on the flexible substrate, and further, when the substrate is a flexible substrate, in order to ensure the performance of the array substrate, a double-layer substrate 1013 and a buffer layer 1014 may be provided, and then, a first gate insulating layer 1015, a second gate insulating layer 1016, a first interlayer dielectric layer 1017, and a second interlayer dielectric layer 1018 are sequentially prepared on the buffer layer.
It should be noted that, when the entire array substrate is manufactured, the display region and the under-screen functional region are manufactured at the same time, but in the array level for manufacturing the display region, the active layer 1019 is further manufactured on the buffer layer, the first gate layer 1020 is manufactured on the first gate insulating layer, the second gate layer 1021 is manufactured on the second gate insulating layer, and the metal electrode layer 103 is further manufactured on the second interlayer dielectric layer in comparison with the manufacture of the under-screen functional region.
202. And preparing a passivation layer on the array substrate.
In this embodiment, as shown in fig. 3(b), a passivation layer 105 is formed on the second interlayer dielectric layer 1018 of the array substrate.
203. A first planarization layer is prepared on the passivation layer.
In this embodiment, as shown in fig. 3(c), a first planarization layer 106 is prepared on the passivation layer 105.
204. A first transparent electrode signal layer is prepared on the first planarization layer.
Wherein the first transparent electrode signal layer 107 is electrically connected to the metal electrode layer 103 of the display region 101 through the first planarization layer 106 and the passivation layer 105.
In this embodiment, as shown in fig. 3(d), a first transparent electrode signal layer 107 is prepared on the first planarization layer 106.
205. A second planarization layer is prepared on the first planarization layer.
Wherein the second planarization layer 108 covers the first transparent electrode signal layer 107.
In this embodiment, as shown in fig. 3(e), a second planarization layer 108 is formed on the first planarization layer 106
206. An anode is prepared on the second planar layer.
Wherein the anode 109 is electrically connected to the first transparent electrode signal layer 107 through the second planarization layer 108.
In this embodiment, as shown in fig. 3(f), an anode 109 is prepared on the second planarization layer 108.
It should be noted that, only the above manufacturing processes are described in the above embodiment of the manufacturing method of the light emitting device 1010, and it is understood that, in addition to the above manufacturing processes, the manufacturing method of the light emitting device 1010 in the embodiment of the present application may further include any other manufacturing processes as needed, for example: the specific process of preparing the array substrate 104 further includes preparing a substrate, and sequentially preparing an array functional film layer and the like on the substrate, which is not limited herein.
As shown in FIGS. 3(g) to 3 (h).
In some embodiments, after preparing the anode 109 on the second flat layer 108, the method includes:
preparing a pixel defining layer 1010 on the second flat layer 108;
a second transparent electrode signal layer 1011 is prepared on the pixel defining layer 1010, wherein the second transparent electrode signal layer 1011 is electrically connected to the metal electrode layer 103 through the pixel defining layer 1010, the second planarization layer 108, the first planarization layer 106 and the passivation layer 105.
In some embodiments, after preparing the second transparent electrode signal layer 1011 on the pixel defining layer 1010, it comprises:
a photoresist spacer layer is prepared on the pixel defining layer 1010, wherein the photoresist spacer layer covers the second transparent electrode signal layer 1011.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and a part which is not described in detail in a certain embodiment may refer to the detailed descriptions in the other embodiments, and is not described herein again.
In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and the specific implementation of each unit or structure may refer to the foregoing method embodiment, which is not described herein again.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The light emitting device 10, the display device and the method for manufacturing the light emitting device provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to illustrate the principles and embodiments of the present application, and the description of the embodiments above is only used to help understanding the technical solutions and the core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. A light-emitting device is characterized in that a display area and an off-screen function area are arranged;
the display region comprises a metal electrode layer;
the under-screen functional area includes:
the passivation layer is arranged on the array substrate;
a first planarization layer disposed on the passivation layer;
a first transparent electrode signal layer disposed on the first planarization layer, wherein the first transparent electrode signal layer is electrically connected to the metal electrode layer through the first planarization layer and the passivation layer;
the second flat layer is arranged on the first flat layer and covers the first transparent electrode signal layer;
and the anode is arranged on the second flat layer, penetrates through the second flat layer and is electrically connected with the first transparent electrode signal layer.
2. The light-emitting device according to claim 1, further comprising a light-emitting device layer provided on the second planarization layer and covering the anode.
3. The light-emitting device according to claim 2, wherein the light-emitting device layer comprises:
a pixel defining layer disposed on the second planarization layer and covering the anode;
and the second transparent electrode signal layer is arranged on the pixel defining layer, penetrates through the pixel defining layer, the second flat layer, the first flat layer and the passivation layer and is electrically connected with the metal electrode layer.
4. The light emitting device of claim 3, wherein the light emitting device layer further comprises:
and the light resistance gap layer is arranged on the pixel defining layer and covers the second transparent electrode signal layer.
5. The light-emitting device according to claim 3, wherein the pixel defining layer is formed with a plurality of grooves; the light emitting device layer further includes: and the plurality of sub-pixels are arranged in the grooves and are electrically connected with the anode.
6. The light-emitting device according to claim 5, wherein the sub-pixel is any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
7. A display device comprising the light-emitting device according to any one of claims 1 to 6 and a sensor, wherein the sensor is provided in the under-screen functional region.
8. The display device of claim 7, wherein the sensor comprises one or a combination of a camera sensor, a breathing light sensor, a distance sensor, a fingerprint scanner sensor, a microphone sensor, or a transparent antenna sensor.
9. A preparation method of a light-emitting device is characterized in that the light-emitting device is provided with a display area and a functional area under a screen, the display area comprises a metal electrode layer, and the method comprises the following steps:
preparing an array substrate;
preparing a passivation layer on the array substrate;
preparing a first flat layer on the passivation layer;
preparing a first transparent electrode signal layer on the first flat layer, wherein the first transparent electrode signal layer is electrically connected with the metal electrode layer of the display region through the first flat layer and the passivation layer;
preparing a second flat layer on the first flat layer, wherein the second flat layer covers the first transparent electrode signal layer;
preparing an anode on the second flat layer, wherein the anode is electrically connected with the first transparent electrode signal layer through the second flat layer.
10. The method for manufacturing a light-emitting device according to claim 9, wherein after the manufacturing of the anode on the second planarization layer, the method comprises:
preparing a pixel defining layer on the second flat layer;
and preparing a second transparent electrode signal layer on the pixel defining layer, wherein the second transparent electrode signal layer is electrically connected with the metal electrode layer through the pixel defining layer, the second flat layer, the first flat layer and the passivation layer.
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