CN113161284A - Method for manufacturing interconnection structure - Google Patents
Method for manufacturing interconnection structure Download PDFInfo
- Publication number
- CN113161284A CN113161284A CN202010013805.5A CN202010013805A CN113161284A CN 113161284 A CN113161284 A CN 113161284A CN 202010013805 A CN202010013805 A CN 202010013805A CN 113161284 A CN113161284 A CN 113161284A
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- Prior art keywords
- layer
- hard mask
- opening
- metal hard
- dielectric layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Geometry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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CN202010013805.5A CN113161284A (en) | 2020-01-07 | 2020-01-07 | Method for manufacturing interconnection structure |
US16/801,706 US11450557B2 (en) | 2020-01-07 | 2020-02-26 | Poisoned metal layer with sloped sidewall for making dual damascene interconnect |
TW109116978A TWI729821B (en) | 2020-01-07 | 2020-05-21 | Method for fabricating interconnect structure |
US17/816,051 US12051617B2 (en) | 2020-01-07 | 2022-07-29 | Method of making a semiconductor device and semiconductor device |
Applications Claiming Priority (1)
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CN202010013805.5A CN113161284A (en) | 2020-01-07 | 2020-01-07 | Method for manufacturing interconnection structure |
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CN113161284A true CN113161284A (en) | 2021-07-23 |
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CN202010013805.5A Pending CN113161284A (en) | 2020-01-07 | 2020-01-07 | Method for manufacturing interconnection structure |
Country Status (3)
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US (1) | US11450557B2 (en) |
CN (1) | CN113161284A (en) |
TW (1) | TWI729821B (en) |
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US9059250B2 (en) * | 2012-02-17 | 2015-06-16 | International Business Machines Corporation | Lateral-dimension-reducing metallic hard mask etch |
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2020
- 2020-01-07 CN CN202010013805.5A patent/CN113161284A/en active Pending
- 2020-02-26 US US16/801,706 patent/US11450557B2/en active Active
- 2020-05-21 TW TW109116978A patent/TWI729821B/en active
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US11450557B2 (en) | 2022-09-20 |
US20220384253A1 (en) | 2022-12-01 |
US20210210378A1 (en) | 2021-07-08 |
TW202127620A (en) | 2021-07-16 |
TWI729821B (en) | 2021-06-01 |
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