CN113161226A - Method for manufacturing gallium nitride single crystal substrate based on plasma CVD - Google Patents
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000013078 crystal Substances 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 31
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 65
- WTKQDILJIUYBGG-UHFFFAOYSA-N aluminum;magnesium;oxygen(2-);scandium(3+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Sc+3] WTKQDILJIUYBGG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 13
- 230000012010 growth Effects 0.000 claims abstract description 10
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000008119 colloidal silica Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- -1 magnesium aluminum scandium Chemical compound 0.000 abstract description 2
- 230000034655 secondary growth Effects 0.000 abstract description 2
- 239000002585 base Substances 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000004645 scanning capacitance microscopy Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention discloses a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD, which comprises magnesium aluminum scandium tetraoxide (ScAlMgO)4) The method comprises the following steps: s1, selecting magnesium aluminum scandium tetraoxide (ScAlMgO)4) The invention is used as a substrate; s2, adopting one of plasma CVD or thermal CVD method, and forming a layer of magnesium aluminum scandium tetraoxide (ScAlMgO)4) Forming silicon dioxide (SiO) on a substrate2) A thin film layer; s3, silicon dioxide (SiO) formed in S2 step2) Epitaxially growing a gallium nitride (GaN) single crystal layer on the thin film layer by HVPE method at high temperature; s4, forming magnesium aluminum scandium tetraoxide (ScAlMgO) on the gallium nitride (GaN) single crystal layer4) Base substrate and silicon dioxide (SiO)2) And removing the thin film layer. The invention is based on the use of a plasma CVD or thermal CVD process and an HVPE processAnd secondary growth is carried out, the damage to the magnesium aluminum scandium tetroxide substrate during the growth of the gallium nitride (GaN) crystal is effectively avoided, and the manufacturing of the high-quality gallium nitride (GaN) crystal substrate without dislocation and crystal defects is realized.
Description
Technical Field
The invention relates to the technical field related to preparation of gallium nitride materials, in particular to a method for manufacturing a gallium nitride single crystal substrate based on plasma Chemical Vapor Deposition (CVD).
Background
GaN is a typical representative of third-generation wide bandgap semiconductors, has been widely used in semiconductor illumination, microwave power devices, power electronic devices, and the like, and shows great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material, and such homoepitaxy (i.e. the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film, reduce the dislocation density, prolong the service life of the device, improve the luminous efficiency and improve the working current density of the device.
However, the gallium nitride single crystal growth is difficult and expensive, and large-scale homoepitaxial growth is not possible at present. Therefore, the current gallium nitride single crystal production still uses heteroepitaxy, such as sapphire (α Al)2O3) Silicon carbide (SiC), gallium arsenide (GaAs), scandium aluminate magnesite (ScAlMgO)4) For example, a composite substrate in which GaN layers are laminated is produced by a Hydride Vapor Phase Epitaxy (HVPE) method, or the laminated GaN layers are separated or sliced from a substrate of a different material and used as a GaN independent substrate. When a GaN crystal is grown on a substrate made of these materials, because of the difference between the lattice constant and the thermal expansion coefficient between the grown crystal and the substrate, stress is generated inside the grown GaN, and crystal defects are broken even, and the influence of residual stress inside the GaN causes warpage of the wafer as a whole. In addition, scandium almitate has a lattice constant of 1.01 times and a thermal expansion coefficient of 1.1 times, which are almost equal to those of gallium nitride, but if it is used as a substrate for GaN crystal growth, in a general HVPE method, a magnesium aluminum scandium tetraoxide substrate is damaged during gallium nitride (GaN) crystal growth, and the occurrence of crystal defects cannot be avoided as in the above-mentioned methods, which is not significantly improved in comparison,the present inventors have therefore devised a method for manufacturing a gallium nitride single crystal substrate by plasma CVD, which solves the above-mentioned problems.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD, which solves the problem that magnesium aluminum scandium tetraoxide (ScAlMgO) is damaged when a gallium nitride (GaN) crystal grows4) Problems with the substrate.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: a method for manufacturing a gallium nitride single crystal substrate by plasma CVD, comprising magnesium aluminum scandium tetraoxide (ScAlMgO)4) The method comprises the following steps:
s1, selecting magnesium aluminum scandium tetraoxide (ScAlMgO)4) As a base substrate;
s2, adopting one of plasma CVD or thermal CVD method, and forming a layer of magnesium aluminum scandium tetraoxide (ScAlMgO)4) Forming silicon dioxide (SiO) on a substrate2) A thin film layer;
s3, silicon dioxide (SiO) formed in S2 step2) Epitaxially growing a gallium nitride (GaN) single crystal layer on the thin film layer at high temperature by HVPE vapor phase growth;
s4, forming magnesium aluminum scandium tetraoxide (ScAlMgO) on the gallium nitride (GaN) single crystal layer4) Base substrate and silicon dioxide (SiO)2) Removing the thin film layer to obtain a gallium nitride (GaN) single crystal substrate;
s5, grinding and polishing the gallium nitride (GaN) single crystal layer by a grinder and a polisher in sequence;
s6, washing the gallium nitride (GaN) single crystal substrate with an alkaline aqueous solution.
Preferably, in the step S2, magnesium aluminum scandium tetraoxide (ScAlMgO) is applied by a plasma CVD apparatus4) Forming silicon dioxide (SiO) on a substrate2) The film layer and the plasma CVD method can be implemented in a low-temperature or normal-temperature environment, and the thermal CVD method needs to be implemented in a temperature environment of 700-900 ℃.
Preferably, in step S3, epitaxial growth of the gallium nitride (GaN) single crystal layer is promoted by HVPE vapor phase growth method under the high temperature reaction condition of 800-1050 ℃, and the thickness of the gallium nitride (GaN) single crystal layer is controlled to be magnesium aluminum scandium tetraoxide (ScAlMgO)4) The thickness of the base plate substrate is 0.2-1.5 times.
Preferably, in step S4, magnesium aluminum scandium tetraoxide (ScAlMgO)4) Applying transverse physical stress between the substrate and the gallium nitride (GaN) single crystal layer to make the gallium nitride (GaN) single crystal layer from magnesium aluminum scandium tetraoxide (ScAlMgO)4) And stripping the substrate, and slicing the gallium nitride (GaN) single crystal layer by adopting linear cutting equipment, wherein the cutting direction is vertical to the central axis direction of the gallium nitride (GaN) single crystal layer.
Preferably, in step S5, a chemical mechanical polishing method of colloidal silica is used to polish and polish the surface of the gallium nitride (GaN) single crystal layer.
Preferably, in step S6, the brush cleaning is performed by moving in a direction parallel to the surface of the gallium nitride (GaN) single crystal layer using an alkaline aqueous solution and a polymer compound material having a hardness lower than that of the gallium nitride (GaN) single crystal layer and absorbing the alkaline aqueous solution.
(III) advantageous effects
The invention provides a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD. The method has the following beneficial effects:
in the invention, the secondary growth is carried out by using a plasma CVD or thermal CVD method and an HVPE method, and in the first stage, magnesium aluminum scandium tetraoxide ScAlMgO is subjected to plasma CVD or thermal CVD method4SiO formation on (SCAM) substrate2A thin film layer of SiO formed in a first stage as a second stage2And a GaN single crystal layer is epitaxially grown on the thin film layer at high temperature by an HVPE vapor phase growth method, and then the SCAM substrate is removed to manufacture the GaN single crystal substrate, so that the damage to a magnesium aluminum scandium tetroxide substrate during the growth of a gallium nitride (GaN) crystal is effectively avoided, and the manufacture of a high-quality gallium nitride (GaN) crystal substrate without dislocation and crystal defects is realized.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a technical scheme that: a method for manufacturing a gallium nitride single crystal substrate by plasma CVD, comprising magnesium aluminum scandium tetraoxide (ScAlMgO)4) The method comprises the following steps:
s1, selecting magnesium aluminum scandium tetraoxide (ScAlMgO)4) As a base substrate;
s2, adopting one of plasma CVD or thermal CVD method, and forming a layer of magnesium aluminum scandium tetraoxide (ScAlMgO)4) Forming silicon dioxide (SiO) on a substrate2) A thin film layer formed on a magnesium aluminum scandium tetraoxide (ScAlMgO) film by a plasma CVD apparatus4) Forming silicon dioxide (SiO) on a substrate2) The plasma CVD method can be implemented in a low-temperature or normal-temperature environment, and the thermal CVD method needs to be implemented in a temperature environment of 700-900 ℃;
s3, silicon dioxide (SiO) formed in S2 step2) Epitaxially growing a gallium nitride (GaN) single crystal layer on the thin film layer by HVPE vapor phase growth method at high temperature, promoting epitaxial growth of the gallium nitride (GaN) single crystal layer by HVPE vapor phase growth method under the high-temperature reaction condition of 800-1050 ℃, and controlling the thickness of the gallium nitride (GaN) single crystal layer at magnesium aluminum scandium tetraoxide (ScAlMgO)4) The thickness of the substrate is 0.2-1.5 times of that of the substrate;
s4, forming magnesium aluminum scandium tetraoxide (ScAlMgO) on the gallium nitride (GaN) single crystal layer4) Base substrate and silicon dioxide (SiO)2) Removing the thin film layer to obtain a gallium nitride (GaN) single crystal substrate, and treating with magnesium aluminum scandium tetraoxide (ScAlMgO)4) Applying transverse physical stress between the substrate and the gallium nitride (GaN) single crystal layer to make the gallium nitride (GaN) single crystal layer from magnesium aluminum scandium tetraoxide (ScAlMgO)4) Peeling off the substrate, slicing the gallium nitride (GaN) single crystal layer with a wire-cutting device in a direction perpendicular to the GaN single crystal layer) A central axis direction of the monocrystalline layer;
s5, grinding and polishing the gallium nitride (GaN) single crystal layer by a grinder and a polisher in sequence, and grinding and polishing the surface of the gallium nitride (GaN) single crystal layer by a chemical mechanical grinding and polishing method of colloidal silica;
s6, cleaning the gallium nitride (GaN) single crystal substrate with an alkaline aqueous solution, and cleaning the substrate with an alkaline aqueous solution and a polymer material which has a hardness lower than that of the gallium nitride (GaN) single crystal layer and absorbs the alkaline aqueous solution, the alkaline aqueous solution being an alkaline aqueous solution selected from the group consisting of potassium hydroxide and sodium hydroxide and having an alkali concentration of 0.05 to 0.5 mass%, and the polymer material being composed of a melamine foam resin, a porous polyvinyl alcohol resin, a fibrous polyester resin, or a nylon resin, by moving the substrate in a direction parallel to the surface of the gallium nitride (GaN) single crystal layer.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a reference structure" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A method for manufacturing a gallium nitride single crystal substrate by plasma CVD, comprising magnesium aluminum scandium tetraoxide (ScAlMgO)4) The method is characterized by comprising the following steps:
s1, selecting magnesium aluminum scandium tetraoxide (ScAlMgO)4) As a base substrate;
s2, adopting one of plasma CVD or thermal CVD method, and forming a layer of magnesium aluminum scandium tetraoxide (ScAlMgO)4) Forming silicon dioxide (SiO) on a substrate2) A thin film layer;
s3, silicon dioxide (SiO) formed in S2 step2) Epitaxially growing a gallium nitride (GaN) single crystal layer on the thin film layer at high temperature by HVPE vapor phase growth;
s4, forming magnesium aluminum scandium tetraoxide (ScAlMgO) on the gallium nitride (GaN) single crystal layer4) Base substrate and silicon dioxide (SiO)2) Removing the thin film layer to obtain a gallium nitride (GaN) single crystal substrate;
s5, grinding and polishing the gallium nitride (GaN) single crystal layer by a grinder and a polisher in sequence;
s6, washing the gallium nitride (GaN) single crystal substrate with an alkaline aqueous solution.
2. The method of manufacturing a gallium nitride single crystal substrate according to claim 1, wherein: in the step S2, magnesium aluminum scandium tetraoxide (ScAlMgO) was applied by a plasma CVD apparatus4) Forming silicon dioxide (SiO) on a substrate2) The film layer and the plasma CVD method can be implemented in a low-temperature or normal-temperature environment, and the thermal CVD method needs to be implemented in a temperature environment of 700-900 ℃.
3. The method of manufacturing a gallium nitride single crystal substrate according to claim 1, wherein: in the step S3, epitaxial growth of the gallium nitride (GaN) single crystal layer is promoted by HVPE vapor phase growth method under the high temperature reaction condition of 800-1050 ℃, and the thickness of the gallium nitride (GaN) single crystal layer is controlled to be magnesium aluminum scandium tetraoxide (ScAlMgO)4) The thickness of the base plate substrate is 0.2-1.5 times.
4. The method of manufacturing a gallium nitride single crystal substrate according to claim 1, wherein: in the step S4, magnesium aluminum scandium tetraoxide (ScAlMgO) is added4) Applying transverse physical stress between the substrate and the gallium nitride (GaN) single crystal layer to make the gallium nitride (GaN) single crystal layer from magnesium aluminum scandium tetraoxide (ScAlMgO)4) And stripping the substrate, and slicing the gallium nitride (GaN) single crystal layer by adopting linear cutting equipment, wherein the cutting direction is vertical to the central axis direction of the gallium nitride (GaN) single crystal layer.
5. The method of manufacturing a gallium nitride single crystal substrate according to claim 1, wherein: in step S5, a chemical mechanical polishing method of colloidal silica is used to polish and polish the surface of the gallium nitride (GaN) single crystal layer.
6. The method of manufacturing a gallium nitride single crystal substrate according to claim 1, wherein: in step S6, the polymer compound material that absorbs the alkaline aqueous solution and has a hardness lower than that of the gallium nitride (GaN) single crystal layer is used, and the polymer compound material is moved in the direction parallel to the surface of the gallium nitride (GaN) single crystal layer and cleaned by brushing.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1405903A (en) * | 2001-09-19 | 2003-03-26 | 住友电气工业株式会社 | Single Crystal gallium nitride base board and its growth method and manufacture method |
| CN1590600A (en) * | 2003-08-28 | 2005-03-09 | 日立电线株式会社 | III-V nitride semiconductor substrate and its production method |
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