CN113156760A - Photoetching mask and mask pattern forming method - Google Patents
Photoetching mask and mask pattern forming method Download PDFInfo
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- CN113156760A CN113156760A CN202110300142.XA CN202110300142A CN113156760A CN 113156760 A CN113156760 A CN 113156760A CN 202110300142 A CN202110300142 A CN 202110300142A CN 113156760 A CN113156760 A CN 113156760A
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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Abstract
The application provides a photoetching mask and a mask pattern forming method, and relates to the technical field of semiconductor manufacturing procedures. The method comprises the steps of providing an original mask pattern comprising a plurality of mask bar graphs which are arranged at intervals, adding at least one scattering stripe which is arranged at intervals with the mask bar graphs on two sides of each mask bar graph respectively, enabling the stripe extending direction of the scattering stripe to be parallel to the length extending direction of the corresponding mask bar graph, then adding auxiliary scattering lines which are arranged at intervals with the mask bar graphs near two end positions of each mask bar graph to form a target mask graph pattern to be exposed, enabling the end edge smoothness of an exposure graph obtained by exposure of the mask bar graphs to be improved through the auxiliary scattering lines when the photoetching mask with the target mask graph pattern is subjected to exposure treatment, and improving the edge retraction condition of the exposure pattern corresponding to an effective mask pattern while improving a photoetching process window.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing processes, in particular to a photoetching mask and a mask pattern forming method.
Background
With the development of integrated circuits, the size of semiconductor devices is gradually reduced, and the demand for increasing the photolithography resolution and the photolithography process window is increasingly strong. In the semiconductor photoetching process, a strip-shaped auxiliary scattering pattern is generally required to be directly inserted around a sparse mask pattern, so that the sparse mask pattern can also obtain exposure conditions similar to those of a dense mask pattern, and the photoetching process window of the sparse mask pattern is improved. It should be noted that, when the mask obtained by the photolithography process window improvement scheme is exposed, the exposure pattern corresponding to the sparse mask pattern formed usually has a relatively serious edge retraction phenomenon, and the integrated circuit process requirements are not easily met.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a photolithography mask and a method for forming a mask pattern, which can improve an edge retraction condition of an exposure pattern corresponding to an effective mask pattern while increasing a photolithography process window, so that the exposure pattern further meets the requirements of an integrated circuit manufacturing process.
In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:
in a first aspect, the present application provides a method for forming a reticle pattern, the method comprising:
providing an original mask pattern, wherein the original mask pattern comprises a plurality of mask bar graphs which are arranged at intervals;
adding at least one scattering stripe arranged at intervals with the mask bar graph on two sides of each mask bar graph respectively, wherein the stripe extending direction of the scattering stripe is parallel to the length extending direction of the corresponding mask bar graph;
and adding auxiliary scattering lines arranged at intervals with the mask bar graphs near the two end parts of each mask bar graph to form a target mask plate pattern to be exposed, wherein the auxiliary scattering lines are used for improving the edge smoothness expressed at the corresponding end parts of an exposure graph obtained based on the exposure of the corresponding mask bar graphs.
In an alternative embodiment, the step of adding the auxiliary scattering texture spaced apart from each mask bar pattern near two end positions of each mask bar pattern includes:
adding a first scattering bifurcation texture at a position close to one end part of a target scattering stripe of each mask bar graph so that a bifurcation node of the first scattering bifurcation texture is communicated with the target scattering stripe;
and adding a second scattering branched texture at the other end position of the target scattering stripe to enable a branched node of the second scattering branched texture to be communicated with the target scattering stripe.
In an alternative embodiment, the step of adding an auxiliary scattering texture spaced apart from each mask bar near two end positions of the mask bar includes:
adding the first semi-surrounding texture to each mask bar graph in the extending direction of one end part of the mask bar graph;
and adding the second half-surrounding texture in the extending direction of the other end part of the mask bar graph, wherein the openings of the first half-surrounding texture and the second half-surrounding texture face to each other.
In an alternative embodiment, the step of adding an auxiliary scattering texture spaced apart from each mask bar pattern near two end positions of the mask bar pattern includes:
for each mask bar graph, adding the third semi-surrounding texture in the extending direction of the first end part of the mask bar graph, and enabling the opening of the third semi-surrounding texture to face the first end part of the mask bar graph;
and adding a third scattering branched texture at a target end part position of a target scattering stripe adjacent to the mask bar graph, so that a branched node of the third scattering branched texture is communicated with the target scattering stripe, wherein the target end part of the target scattering stripe is adjacent to the second end part of the mask bar graph, and the first end part and the second end part of the same mask bar graph are respectively deviated from each other in direction.
In an alternative embodiment, the scattering stripe and the auxiliary scattering stripe are formed by combining a plurality of spaced-apart stripe segments.
In a second aspect, the present application provides a lithographic mask, including a substrate and a target mask pattern formed on the substrate, where the target mask pattern includes an original mask pattern, scattering fringes, and auxiliary scattering fringes;
the original mask pattern comprises a plurality of mask bar graphs which are arranged at intervals, at least one scattering stripe which is arranged at intervals with the mask bar graphs is distributed on two sides of each mask bar graph respectively, and the extending direction of the stripes of the scattering stripes is parallel to the extending direction of the length of the corresponding mask bar graphs;
auxiliary scattering lines arranged at intervals with the mask bar graphs are distributed near the two end parts of each mask bar graph, so that the edge smoothness of an exposure graph obtained based on exposure of the corresponding mask bar graphs at the corresponding end parts is improved through the auxiliary scattering lines.
In an alternative embodiment, the auxiliary scattering texture includes a first scattering bifurcation texture and a second scattering bifurcation texture;
and a first scattering branched texture is distributed at one end position of each target scattering stripe adjacent to the mask bar graph, a second scattering branched texture is distributed at the other end position of each target scattering stripe, and branched nodes of the first scattering branched texture and the second scattering branched texture connected with the same target scattering stripe are communicated with the target scattering stripe.
In an alternative embodiment, the auxiliary scattering texture comprises a first semi-surrounding texture and a second semi-surrounding texture;
and a first semi-surrounding texture is distributed on one end part of each mask bar graph in the extending direction, a second semi-surrounding texture is distributed on the other end part of each mask bar graph in the extending direction, and the respective opening directions of the first semi-surrounding texture and the second semi-surrounding texture corresponding to the same mask bar graph are opposite to each other.
In an alternative embodiment, the auxiliary scattering texture comprises a third semi-surrounding texture and a third scattering bifurcation texture;
third semi-surrounding grains are distributed in the extending direction of the first end part of each mask bar graph, wherein the opening of each third semi-surrounding grain faces the first end part of the mask bar graph, and the first end part and the second end part of the same mask bar graph face away from each other;
and a third scattering bifurcation texture is distributed at the position of the target end part of each target scattering stripe adjacent to the mask bar graph, wherein the target end part of the target scattering stripe is adjacent to the second end part of the mask bar graph, and the bifurcation node of the third scattering bifurcation texture is communicated with the corresponding target scattering stripe.
In an alternative embodiment, the scattering stripe and the auxiliary scattering stripe are formed by combining a plurality of spaced-apart stripe segments.
The beneficial effects of the embodiment of the application comprise the following contents:
the method comprises providing an original mask pattern including multiple mask bar graphs arranged at intervals, adding at least one scattering stripe on two sides of each mask bar graph at intervals to make the extending direction of the stripe parallel to the length extending direction of the corresponding mask bar graph, then adding auxiliary scattering lines arranged at intervals with the mask bar graph near two end positions of each mask bar graph to form a target mask plate pattern to be exposed so that when the photoetching mask plate with the target mask plate pattern is exposed, the end edge smoothness of the exposure pattern exposed by the mask bar graph can be improved by the auxiliary scattering texture, therefore, the photoetching process window is improved, simultaneously, the edge retraction condition of the exposure pattern corresponding to the effective mask pattern is improved, and the integrated circuit manufacturing process requirement is further met.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic flow chart of a method for forming a reticle pattern according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of a layout structure of a photolithographic reticle provided in an embodiment of the present application;
FIG. 3 is a schematic flow chart showing sub-steps included in step S230 of FIG. 1;
FIG. 4 is a second schematic flowchart illustrating the sub-steps included in step S230 of FIG. 1;
FIG. 5 is a second schematic view illustrating a layout structure of a photolithographic reticle provided in an embodiment of the present application;
FIG. 6 is a third schematic view illustrating a layout structure of a photolithographic reticle provided in an embodiment of the present application;
FIG. 7 is a third schematic flowchart illustrating the sub-steps included in step S230 of FIG. 1;
FIG. 8 is a fourth schematic view illustrating a layout structure of a photolithographic reticle provided in an embodiment of the present application;
fig. 9 is a fifth schematic view of a layout structure of a photolithographic reticle provided in an embodiment of the present application.
The attached drawings are as follows: 10-photoetching mask plate; 11-a substrate; 12-original mask pattern; 121-mask bar graph; 13-scattering fringes; 14-auxiliary scattering lines; 141-a first scattering bifurcation texture; 142-a second scattering bifurcation texture; 143-first half-surround grain; 144-second semi-encircling texture; 145-third semi-encircling texture; 146-third scattering bifurcation texture.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it is to be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like are used in an orientation or positional relationship as indicated in the drawings, or as would be ordinarily understood by those skilled in the art, simply for convenience in describing and simplifying the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be in any way limiting of the present application.
In the description of the present application, it is further noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. Also, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for forming a reticle pattern according to an embodiment of the present disclosure. In the embodiment of the application, the mask pattern forming method can fill the scattering pattern on the basis of the original mask pattern, so that the finally formed mask pattern has a higher photoetching process window compared with the original mask pattern, and meanwhile, when the mask pattern is subjected to photoetching exposure treatment, the filled scattering pattern can improve the pattern edge smoothness of the exposure pattern corresponding to the original mask pattern in the exposure process, so that the edge retraction condition of the exposure pattern corresponding to the original mask pattern is improved, and the integrated circuit manufacturing process requirement is further met. The original mask pattern is a mask pattern set which is initially designed and actually related to a real integrated circuit, and the method for forming the mask pattern may include steps S210 to S230. The mask pattern forming method provided by the present application is described in detail below.
In step S210, an original mask pattern is provided, wherein the original mask pattern includes a plurality of mask bar graphs arranged at intervals.
In this embodiment, the original mask pattern may include at least one set of mask bar graphs, each set of mask bar graphs including a plurality of mask bar graphs arranged at intervals. The mask bar graphs in the same group of mask bar graph sets have the same length extension direction, and the distances between the adjacent mask bar graphs in the same group of mask bar graph sets can be the same or different. If there are multiple sets of mask bar graphs, the length extension directions of the mask bar graphs corresponding to different mask bar graph sets may intersect or may be parallel. For example, in the layout schematic diagram of the lithography reticle 10 shown in fig. 2, the lithography reticle 10 may include a base plate 11 and an original mask pattern 12 formed on the base plate 11, wherein the original mask pattern 12 includes a plurality of mask bar patterns 121 arranged at intervals.
Step S220, respectively adding at least one scattering stripe arranged at intervals with the mask bar graph on two sides of each mask bar graph, wherein the stripe extending direction of the scattering stripe is parallel to the length extending direction of the corresponding mask bar graph.
In this embodiment, at least one scattering stripe disposed at an interval with each mask stripe in the original mask pattern is added to each of two side edges of each mask stripe in the length extending direction of the mask stripe, so that the extending direction of the added scattering stripe is parallel to the length extending direction of the adjacent mask stripe, and the pattern density corresponding to the original mask pattern is increased by the added scattering stripe, thereby increasing the photolithography process window of the original mask pattern. Wherein adjacent mask bar graphs belonging to the same mask bar graph set can share the same scattering stripe. For example, in the schematic layout diagram of the lithography reticle 10 shown in fig. 2, at least one scattering stripe 13 formed on the substrate 11 is respectively arranged on both sides of each mask stripe pattern 121 included in the original mask pattern 12 in the lithography reticle 10, wherein one scattering stripe 13 may be shared between two mask stripe patterns 121 which are adjacently arranged and have the same length extension direction, and the stripe extension direction of the scattering stripe 13 is parallel to the length extension direction of the two mask stripe patterns 121.
And step S230, adding auxiliary scattering lines arranged at intervals with the mask bar graph near the two end positions of each mask bar graph to form a target mask template pattern to be exposed.
In this embodiment, the auxiliary scattering texture is used to correct the end exposure effect of the adjacent mask bar graph, so that the edge smoothness of the exposure pattern obtained by exposing the mask bar graph at the end adjacent to the auxiliary scattering texture is improved, thereby effectively improving the edge retraction condition of the exposure pattern corresponding to the original mask pattern. For example, a mask stripe pattern includes a first end portion and a second end portion, a portion of auxiliary scattering texture spaced apart from the first end portion is formed near the first end portion of the mask stripe pattern, so as to improve the end edge smoothness of an exposure pattern corresponding to the first end portion of the mask stripe pattern by the portion of auxiliary scattering texture near the first end portion, and another portion of auxiliary scattering texture spaced apart from the second end portion is also formed near the second end portion of the mask stripe pattern, so as to improve the end edge smoothness of the exposure pattern corresponding to the second end portion of the mask stripe pattern by the portion of auxiliary scattering texture near the second end portion, thereby effectively improving the edge retraction condition of the exposure pattern corresponding to the original mask pattern.
At the moment, the original mask pattern is matched with the auxiliary scattering lines and the scattering stripes to form a target mask pattern which can be directly prepared and molded, so that the photoetching mask with the target mask pattern has a higher photoetching process window and a better pattern edge smoothness compared with the original mask pattern, and the requirements of integrated circuit manufacturing processes are further met. For example, in the layout schematic diagram of the lithography reticle 10 shown in fig. 2, auxiliary scattering ridges 14 spaced apart from each mask bar pattern 121 are formed near two end positions of each mask bar pattern 121 in the lithography reticle 10, so that a target reticle pattern obtained by combining the original mask pattern 12, the scattering stripes 13, and the auxiliary scattering ridges 14 is directly formed on the substrate 11.
The method comprises the steps of obtaining a mask fringe pattern, forming auxiliary scattering lines on the mask fringe pattern, and adjusting the arrangement mode of the auxiliary scattering lines and the scattering stripes.
Therefore, by executing the steps S210 to S230, the scattering pattern is expanded on the basis of the original mask pattern to obtain a final mask pattern, so that the mask pattern has a higher photolithography process window compared with the original mask pattern, and when the photolithography exposure processing is executed, the pattern edge smoothness of the exposure pattern corresponding to the original mask pattern can be improved by the filled scattering pattern, thereby improving the edge retraction condition of the exposure pattern corresponding to the original mask pattern, and further meeting the integrated circuit manufacturing process requirements.
Optionally, please refer to fig. 2 and fig. 3 in combination, wherein fig. 3 is one of the flow charts illustrating the sub-steps included in step S230 in fig. 1. In the first implementation manner of the embodiment of the present application, the auxiliary scattering texture 14 includes a first scattering bifurcation texture 141 and a second scattering bifurcation texture 142, and the step of adding the auxiliary scattering texture spaced apart from each mask bar in the vicinity of two end positions of each mask bar in step S230 may include sub-steps S231 and S232.
And a substep S231, for each mask bar chart, adding a first scattering bifurcation texture at a position adjacent to one end of the target scattering stripe of the mask bar chart, so that a bifurcation node of the first scattering bifurcation texture is communicated with the target scattering stripe.
In this embodiment, the scattering stripe 13 adjacent to each mask bar graph 121 in the lithography reticle 10 shown in fig. 2 may be regarded as a target scattering stripe, and at this time, a first scattering bifurcating texture 141 may be disposed at an end position of each target scattering stripe, so that the bifurcating node of the first scattering bifurcating texture 141 communicates with the target scattering stripe. The first scattering bifurcation lines 141 may be formed by two linear lines or arc lines intersecting at the same end, or may be formed by two bending lines intersecting at the same end.
And a substep S232 of adding a second scattering branched texture at the other end position of the target scattering stripe to communicate a branched node of the second scattering branched texture with the target scattering stripe.
In this embodiment, as shown in fig. 2, a second scattering bifurcating texture 142 is also distributed at another end position of each target scattering stripe in the lithography reticle 10, which is not communicated with the first scattering bifurcating texture 141, so that a bifurcation node of the second scattering bifurcating texture 142 is communicated with the target scattering stripe. The second scattering bifurcation lines 142 may be formed by two linear lines or two circular arc lines intersecting at the same end, or may be formed by two bending lines intersecting at the same end.
At this time, the scattering stripe of the target adjacent to the mask bar pattern 121 is correspondingly connected to a first scattering bifurcating texture 141 and a second scattering bifurcating texture 142, so that the auxiliary scattering texture 14 spaced apart from the mask bar pattern 121 is formed near both end positions of each mask bar pattern 121 in the original mask pattern 12 by the first scattering bifurcating texture 141 and the second scattering bifurcating texture 142. Optionally, the respective diverging directions of the first scattering bifurcated texture 141 and the second scattering bifurcated texture 142 which are communicated with the same target scattering stripe are mutually deviated, the diverging angle of the first scattering bifurcated texture 141 is greater than zero and less than or equal to 180 degrees, and the diverging angle of the second scattering bifurcated texture 142 is greater than zero and less than or equal to 180 degrees.
Optionally, please refer to fig. 4 and fig. 5 in combination, where fig. 4 is a second schematic flowchart of the sub-step included in step S230 in fig. 1, and fig. 5 is a second schematic layout of the lithography reticle 10 according to the embodiment of the present disclosure. In the second implementation manner of the embodiment of the present application, the auxiliary scattering texture 14 includes a first half-surrounded texture 143 and a second half-surrounded texture 144, and the step of adding the auxiliary scattering texture spaced apart from each mask bar in the vicinity of two end positions of the mask bar in step S230 may include sub-steps S233 and S234.
In the sub-step S233, for each mask bar, a first half-surround texture is added to an end portion of the mask bar in an extending direction.
In this embodiment, in the lithography reticle 10 shown in fig. 4, a first semi-surrounding texture 143 is distributed in an extending direction of one end of each mask bar 121, and one end of the mask bar 121 is surrounded by the first semi-surrounding texture 143. The first semi-surrounding texture 143 and the mask bar graph 121 are arranged at an interval, and the shape of the first semi-surrounding texture 143 may be an arc-shaped structure or a square cover-shaped structure.
In the sub-step S234, a second half-surrounded texture is added to the extending direction of the other end of the mask bar graph, wherein the openings of the first half-surrounded texture and the second half-surrounded texture face to each other.
In this embodiment, in the lithography reticle 10 shown in fig. 4, a second half-surrounding texture 144 is distributed in an extending direction of the other end of each mask bar 121 far from the first half-surrounding texture 143, and the other end of the mask bar 121 is surrounded by the second half-surrounding texture 144. The second half-surrounding texture 144 and the mask bar graph 121 are arranged at intervals, and the shape of the second half-surrounding texture 144 may be an arc-shaped structure or a square-cap-shaped structure.
At this time, the first and second semi-surrounding ridges 143 and 144 adjacent to the ends of the mask bar pattern 121 are spaced apart from the corresponding target scattering stripe, so that the auxiliary scattering ridges 14 spaced apart from the mask bar pattern 121 are formed near both end positions of each mask bar pattern 121 in the original mask pattern 12 by the first and second semi-surrounding ridges 143 and 144. Optionally, the openings of the first semi-surrounding texture 143 and the second semi-surrounding texture 144 corresponding to the same mask bar pattern 121 face each other.
Optionally, referring to fig. 6, fig. 6 is a third schematic layout view of the photolithographic reticle 10 provided in the embodiment of the present application. In a third implementation manner of the embodiment of the present application, the auxiliary scattering texture 14 may include the first scattering branched texture 141, the second scattering branched texture 142, the first half-surrounding texture 143, and the second half-surrounding texture 144 at the same time, at this time, a first scattering branched texture 141 may be distributed at one end of each target scattering stripe adjacent to the mask bar graph 121, and a second scattering branched texture 142 may be distributed at the other end of the target scattering stripe, so that respective branched nodes of the first scattering branched texture 141 and the second scattering branched texture 142 connected to the same target scattering stripe are communicated with the target scattering stripe.
Meanwhile, a first half-surrounding texture 143 is distributed and arranged in the extending direction of one end of each mask bar graph 121, and a second half-surrounding texture 144 is distributed and arranged in the extending direction of the other end of each mask bar graph 121, so that the respective openings of the first half-surrounding texture 143 and the second half-surrounding texture 144 corresponding to the same mask bar graph 121 face to each other.
At this time, the auxiliary scattering ridges 14 spaced apart from the mask bar pattern 121 may be formed near both end positions of the single mask bar pattern 121 in the original mask pattern 12 by cooperation among the first scattering bifurcating ridges 141, the second scattering bifurcating ridges 142, the first semi-surrounding ridges 143, and the second semi-surrounding ridges 144.
Optionally, please refer to fig. 7 and fig. 8 in combination, where fig. 7 is a third schematic flowchart of a sub-step included in step S230 in fig. 1, and fig. 8 is a fourth schematic layout of a photolithographic reticle 10 provided in the embodiment of the present application. In a fourth embodiment of the present embodiment, the auxiliary scattering ridges 14 may include a third semi-surrounding ridge 145 and a third scattering bifurcating ridge 146, and the step of adding auxiliary scattering ridges spaced apart from each mask bar in the vicinity of two end positions of the mask bar in step S230 may include sub-steps S245 and S246.
In the substep S245, a third semi-surrounding texture is distributed on the first end of each mask bar graph in the extending direction, wherein the opening of the third semi-surrounding texture faces the first end of the mask bar graph, and the first end and the second end of the same mask bar graph face away from each other.
In this embodiment, as shown in fig. 7, each mask bar graph 121 in the lithography reticle 10 includes a first end and a second end facing away from each other, a third semi-surrounding texture 145 is distributed on the first end of each mask bar graph 121 in the extending direction, so that an opening of the third semi-surrounding texture 145 faces the first end of the mask bar graph 121, and the first end of the mask bar graph 121 is surrounded by the third semi-surrounding texture 145. The third half-surrounded texture 145 and the corresponding mask bar graph 121 are arranged at intervals, and the shape of the third half-surrounded texture 145 may be an arc-shaped structure or a square-cap-shaped structure.
And substep S246, distributing a third scattering bifurcating texture adjacent to the target end of each target scattering stripe of the mask bar graph, wherein the target end of the target scattering stripe is adjacent to the second end of the mask bar graph, and the bifurcating junction of the third scattering bifurcating texture is communicated with the corresponding target scattering stripe.
In this embodiment, as shown in fig. 7 for each mask bar graph 121 in the lithography reticle 10, a third scattering bifurcating texture 146 may be distributed at a target end position of a target scattering stripe adjacent to the mask bar graph 121, so that a bifurcation node of the third scattering bifurcating texture 146 communicates with the corresponding target scattering stripe. Wherein the target end position of the target fringe is an end position of the target fringe adjacent to the second end of the corresponding mask bar graph 121. The third scattering branched texture 146 may be formed by two linear textures or arc textures intersecting at the same end, or may be formed by two bent textures intersecting at the same end, a branching direction of the third scattering branched texture 146 is parallel to and the same as an extending direction of the second end of the corresponding mask bar graph 121, and a branching angle of the third scattering branched texture 146 is greater than zero and less than or equal to 180 degrees.
At this time, the auxiliary scattering ridges 14 spaced apart from the mask bar 121 may be formed near both end positions of the single mask bar 121 in the original mask pattern 12 by the cooperation between the third scattering bifurcating ridges 146 and the third half-surrounding ridges 145.
Optionally, in the embodiments of the present application, to avoid the above-mentioned target reticle pattern being exposed during the lithographic exposure process, the scattering pattern (including scattering stripes and auxiliary scattering stripes) included in the target mask pattern is also exposed to a corresponding exposure pattern according to the pattern size, that is, the scattering pattern is completely exposed (Print Out), the scattering stripe and the auxiliary scattering stripe in the target mask pattern can be prepared into a plurality of line sections distributed at intervals by adopting an interrupt process to be combined and formed, each scattering stripe 13 and each auxiliary scattering stripe 14 (including third half-surrounded stripe 145 and third scattering bifurcation stripe 146) in the lithography reticle 10 shown in fig. 9 are combined into the shape of the corresponding scattering stripe 13 and the corresponding auxiliary scattering stripe 14 in the lithography reticle 10 shown in fig. 8 by using a plurality of mutually spaced stripe ends.
Therefore, the present application can add the auxiliary scattering texture with the matched molding shape to each mask bar graph in the original mask pattern by executing any one of the four embodiments, so as to improve the end exposure effect of the corresponding mask bar graph through the auxiliary scattering texture, and greatly improve the edge smoothness of the exposure pattern obtained by exposing the mask bar graph at the end adjacent to the auxiliary scattering texture, thereby effectively improving the edge retraction condition of the exposure pattern corresponding to the original mask pattern.
In summary, in the lithography mask and the mask pattern forming method provided by the present application, an original mask pattern including a plurality of mask bar graphs arranged at intervals is provided, then at least one scattering stripe arranged at an interval with the mask bar graphs is added on each of two sides of each mask bar graph, so that the stripe extending direction of the scattering stripe is parallel to the length extending direction of the corresponding mask bar graph, and then auxiliary scattering lines arranged at an interval with the mask bar graphs are added near two end positions of each mask bar graph to form a target mask pattern to be exposed, so that when the lithography mask with the target mask pattern is exposed, the end edge of an exposure pattern exposed by the mask bar graphs can be smoothly lifted by the auxiliary scattering lines, thereby lifting the lithography process window, the edge retraction of the exposure pattern corresponding to the effective mask pattern is improved, and the requirement of the integrated circuit manufacturing process is further met.
The above description is only for various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and all such changes or substitutions are included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for forming a mask pattern, the method comprising:
providing an original mask pattern, wherein the original mask pattern comprises a plurality of mask bar graphs which are arranged at intervals;
adding at least one scattering stripe arranged at intervals with the mask bar graph on two sides of each mask bar graph respectively, wherein the stripe extending direction of the scattering stripe is parallel to the length extending direction of the corresponding mask bar graph;
and adding auxiliary scattering lines arranged at intervals with the mask bar graphs near the two end parts of each mask bar graph to form a target mask plate pattern to be exposed, wherein the auxiliary scattering lines are used for improving the edge smoothness expressed at the corresponding end parts of an exposure graph obtained based on the exposure of the corresponding mask bar graphs.
2. The method of claim 1, wherein the secondary scattering texture comprises a first scattering bifurcation texture and a second scattering bifurcation texture, and wherein the step of adding a secondary scattering texture spaced apart from each mask bar near the two end positions of the mask bar comprises:
adding a first scattering bifurcation texture at a position close to one end part of a target scattering stripe of each mask bar graph so that a bifurcation node of the first scattering bifurcation texture is communicated with the target scattering stripe;
and adding a second scattering branched texture at the other end position of the target scattering stripe to enable a branched node of the second scattering branched texture to be communicated with the target scattering stripe.
3. The method of claim 1, wherein the secondary scattering ridges comprise a first semi-encircling ridge and a second semi-encircling ridge, and wherein the step of adding a secondary scattering ridge spaced from each mask bar near the two end positions of the mask bar comprises:
adding the first semi-surrounding texture to each mask bar graph in the extending direction of one end part of the mask bar graph;
and adding the second half-surrounding texture in the extending direction of the other end part of the mask bar graph, wherein the openings of the first half-surrounding texture and the second half-surrounding texture face to each other.
4. The method of claim 1, wherein the secondary scattering ridges comprise a third semi-encircling ridge and a third scattering bifurcation ridge, and wherein the step of adding a secondary scattering ridge spaced apart from each mask bar near both end locations comprises:
for each mask bar graph, adding the third semi-surrounding texture in the extending direction of the first end part of the mask bar graph, and enabling the opening of the third semi-surrounding texture to face the first end part of the mask bar graph;
and adding a third scattering branched texture at a target end part position of a target scattering stripe adjacent to the mask bar graph, so that a branched node of the third scattering branched texture is communicated with the target scattering stripe, wherein the target end part of the target scattering stripe is adjacent to the second end part of the mask bar graph, and the first end part and the second end part of the same mask bar graph are respectively deviated from each other in direction.
5. The method as claimed in any one of claims 1 to 4, wherein the scattering striations and the auxiliary scattering striations are formed by combining a plurality of spaced apart striation segments.
6. A photoetching mask is characterized by comprising a substrate and a target mask pattern formed on the substrate, wherein the target mask pattern comprises an original mask pattern, scattering stripes and auxiliary scattering stripes;
the original mask pattern comprises a plurality of mask bar graphs which are arranged at intervals, at least one scattering stripe which is arranged at intervals with the mask bar graphs is distributed on two sides of each mask bar graph respectively, and the extending direction of the stripes of the scattering stripes is parallel to the extending direction of the length of the corresponding mask bar graphs;
auxiliary scattering lines arranged at intervals with the mask bar graphs are distributed near the two end parts of each mask bar graph, so that the edge smoothness of an exposure graph obtained based on exposure of the corresponding mask bar graphs at the corresponding end parts is improved through the auxiliary scattering lines.
7. The photolithographic reticle defined in claim 6 wherein the auxiliary scattering lines comprise first and second scattering bifurcating lines;
and a first scattering branched texture is distributed at one end position of each target scattering stripe adjacent to the mask bar graph, a second scattering branched texture is distributed at the other end position of each target scattering stripe, and branched nodes of the first scattering branched texture and the second scattering branched texture connected with the same target scattering stripe are communicated with the target scattering stripe.
8. The photolithographic reticle defined in claim 6 wherein the auxiliary scattering texture comprises a first semi-surrounding texture and a second semi-surrounding texture;
and a first semi-surrounding texture is distributed on one end part of each mask bar graph in the extending direction, a second semi-surrounding texture is distributed on the other end part of each mask bar graph in the extending direction, and the respective opening directions of the first semi-surrounding texture and the second semi-surrounding texture corresponding to the same mask bar graph are opposite to each other.
9. The photolithographic reticle defined in claim 6 wherein the auxiliary scattering texture comprises a third semi-surrounding texture and a third scattering bifurcation texture;
third semi-surrounding grains are distributed in the extending direction of the first end part of each mask bar graph, wherein the opening of each third semi-surrounding grain faces the first end part of the mask bar graph, and the first end part and the second end part of the same mask bar graph face away from each other;
and a third scattering bifurcation texture is distributed at the position of the target end part of each target scattering stripe adjacent to the mask bar graph, wherein the target end part of the target scattering stripe is adjacent to the second end part of the mask bar graph, and the bifurcation node of the third scattering bifurcation texture is communicated with the corresponding target scattering stripe.
10. The photolithography reticle defined in any one of claims 6-9 wherein the scattering striations and the auxiliary scattering striations are formed by combining a plurality of spaced apart striation segments.
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