CN113140643A - CdZnTe radiation detector - Google Patents

CdZnTe radiation detector Download PDF

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Publication number
CN113140643A
CN113140643A CN202110411194.4A CN202110411194A CN113140643A CN 113140643 A CN113140643 A CN 113140643A CN 202110411194 A CN202110411194 A CN 202110411194A CN 113140643 A CN113140643 A CN 113140643A
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cdznte
metal
radiation detector
anode
crystal
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胡海帆
秦秀波
刘鹏浩
赵宏鸣
李志垚
马喆
毛磊
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Second Research Institute Of Casic
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Second Research Institute Of Casic
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

The invention discloses a CdZnTe radiation detector, relates to the technical field of radiation detection, and aims to solve the problem that the charge collection efficiency of the existing radiation detector is low. The CdZnTe radiation detector comprises a plurality of CdZnTe crystals, wherein one surface of each CdZnTe crystal is provided with a metal anode, the other surface of each CdZnTe crystal, which is not adjacent to the anode surface, is provided with a metal cathode, or two surfaces of each CdZnTe crystal, which are not adjacent to the anode surface, are provided with metal anodes, one or more surfaces of each CdZnTe crystal, which are adjacent to the two anode surfaces, are provided with metal cathodes, or the side surfaces of each CdZnTe crystal are provided with metal anodes, one or two bottom surfaces of each CdZnTe crystal are provided with metal cathodes, and then the CdZnTe crystals are bonded in a mode that the metal anodes are attached to the metal anodes or the metal cathodes are attached to the metal cathodes, so that the CdZnTe radiation detector with a three-dimensional electrode structure is formed. The CdZnTe radiation detector provided by the invention is used for radiation detection.

Description

CdZnTe radiation detector
Technical Field
The invention relates to the technical field of radiation detection, in particular to a CdZnTe radiation detector applied to radiation detection.
Background
The new generation of compound semiconductor of cadmium zinc telluride (CdZnTe) is an ideal material for manufacturing X-ray and low-energy gamma-ray detectors. The CdZnTe detector can directly convert X rays or gamma rays into electric signals, and has the advantages of no light scattering in the indirect conversion process of the traditional scintillator detector due to direct conversion, high spatial resolution and simple structure.
However, since cadmium zinc telluride is a ternary compound material, defects caused by component deviation, impurities and the like exist in the preparation process, and defects are also caused due to incomplete crystal lattices in the preparation process, so that the electrical properties of the cadmium zinc telluride material cannot be effectively improved all the time, and the wide application of the cadmium zinc telluride material is greatly influenced.
The performance of the CdZnTe detector is not only related to the material characteristics of the CdZnTe detector, but also related to the later device manufacturing process. Good device technology can make up for the deficiency of materials, and especially under the condition that the material characteristics are difficult to improve, the device technology is very important. The CdZnTe crystal is brittle and is very easy to break in the micro-nano processing process, so the CdZnTe crystal is rarely etched and other processes. Therefore, the CdZnTe crystal is difficult to directly manufacture into a three-dimensional electrode detector structure similar to a silicon-based radiation detector, and the charge collection efficiency of the CdZnTe radiation detector cannot be improved.
Disclosure of Invention
The invention aims to provide a CdZnTe radiation detector which can effectively improve the charge collection efficiency of the CdZnTe radiation detector.
In order to achieve the above purpose, the invention provides the following technical scheme:
a CdZnTe radiation detector comprises a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; a metal anode is arranged on one surface of the CdZnTe crystal, the surface provided with the metal anode is taken as an anode surface, and a metal cathode is arranged on the other surface which is not adjacent to the anode surface;
and bonding the plurality of CdZnTe crystals according to the mode that the metal anode is attached to the metal anode or the metal cathode is attached to the metal cathode to form a linear array to form the CdZnTe radiation detector.
The invention also provides a CdZnTe radiation detector, which comprises a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; two nonadjacent surfaces of the CdZnTe crystal are provided with metal anodes, the surface provided with the metal anodes is taken as an anode surface, and one or more surfaces adjacent to the two anode surfaces are provided with metal cathodes;
and bonding the CdZnTe crystals according to the mode that the metal anode is attached to the metal anode to form a linear array to form the CdZnTe radiation detector.
The invention also provides a CdZnTe radiation detector, which comprises a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; metal anodes are arranged on the side surfaces of the CdZnTe crystal, and metal cathodes are arranged on one or two bottom surfaces;
and bonding the CdZnTe crystals according to the mode that the metal anode is attached to the metal anode to form a surface array to form the CdZnTe radiation detector.
Compared with the prior art, the CdZnTe radiation detector provided by the invention has the advantages that the placement positions of three metal anodes and metal cathodes on the CdZnTe crystals are designed, then a plurality of CdZnTe crystals are bonded in a mode that the metal anodes are attached to the metal anodes and the metal cathodes are attached to the metal cathodes to form a linear array or a planar array, so that the CdZnTe radiation detector with a three-dimensional electrode structure is formed, the problem of low charge collection efficiency caused by the fact that the CdZnTe crystals cannot be etched and cannot be manufactured into the three-dimensional electrode detector structure can be solved, and the charge collection efficiency of the CdZnTe radiation detector can be effectively improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a top view of a conventional CdZnTe area array detector.
Fig. 2 is a cross-sectional view of a conventional CdZnTe area array detector.
Fig. 3 is a top view of a single CdZnTe crystal provided in an embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of two CdZnTe crystal bonds provided in example 1 of the present invention.
Fig. 5 is a schematic cross-sectional view of two CdZnTe crystal bonds provided in example 1 of the present invention.
Fig. 6 is a schematic cross-sectional view of a plurality of CdZnTe crystal bonds provided in embodiment 1 of the present invention.
Fig. 7 is a schematic cross-sectional view of two CdZnTe crystal bonds provided in embodiment 2 of the present invention.
Fig. 8 is a schematic cross-sectional view of two CdZnTe crystal bonds provided in embodiment 2 of the present invention.
Fig. 9 is a schematic cross-sectional view of a plurality of CdZnTe crystal bonds provided in embodiment 2 of the present invention.
Fig. 10 is a schematic cross-sectional view of a plurality of CdZnTe crystal bonds provided in embodiment 3 of the present invention.
Fig. 11 is a schematic cross-sectional view of a plurality of CdZnTe crystal bonds provided in embodiment 3 of the present invention.
Reference numerals:
101-an anode; 102-a crystal; 103-a cathode;
1-CdZnTe crystal; 2-a metal anode; 3-a metal cathode; 4-three-dimensional active pixels.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Example 1:
the structure of the existing radiation detector for radiation detection is shown in fig. 1 and fig. 2, and comprises an anode 101, a crystal 102 and a cathode 103, but because the CdZnTe crystal is brittle and is very easy to break in the micro-nano processing process, the CdZnTe crystal is rarely etched and other processes, and based on the processes, the CdZnTe crystal is difficult to directly manufacture a three-dimensional electrode detector structure similar to a silicon-based radiation detector, so that the charge collection efficiency of the CdZnTe radiation detector cannot be improved. Referring to fig. 3, 4, 5 and 6, a CdZnTe radiation detector according to an embodiment of the present invention includes a plurality of CdZnTe crystals 1, where the CdZnTe crystals 1 are columnar, and the CdZnTe crystals 1 are high-resistance semiconductor crystals. One surface of the CdZnTe crystal 1 is provided with a metal anode 2, the surface provided with the metal anode 2 is taken as an anode surface, and the other surface which is not adjacent to the anode surface is provided with a metal cathode 3. And bonding the CdZnTe crystals 1 according to the mode that the metal anode 2 is attached to the metal anode 2 or the metal cathode 3 is attached to the metal cathode 3 to form a linear array to form the CdZnTe radiation detector.
After a plurality of CdZnTe crystals 1 are bonded in a mode that the metal anode 2 is attached to the metal anode 2 or the metal cathode 3 is attached to the metal cathode 3, the CdZnTe radiation detector with a three-dimensional electrode structure can be formed, the three-dimensional electrode radiation detector structure of the CdZnTe crystals 1 is realized on the whole structure, the problem that the CdZnTe crystals are difficult to directly manufacture into the three-dimensional electrode detector structure similar to a silicon-based radiation detector due to the fact that the CdZnTe crystals cannot be etched and other processes is solved, and therefore the charge collection efficiency of the CdZnTe radiation detector can be remarkably improved. In addition, when the CdZnTe radiation detector works, the metal cathode 3 is applied with reverse bias voltage, the metal anode 2 is applied with zero potential, after particles enter the CdZnTe radiation detector, a large number of electron carriers and hole carriers are excited in the CdZnTe radiation detector, under the action of an external electric field, the electron carriers drift towards the metal anode 2, the hole carriers drift towards the metal cathode 3, after a plurality of CdZnTe crystals 1 are bonded in a mode that the metal anode 2 is attached to the metal anode 2 or the metal cathode 3 is attached to the metal cathode 3, because the metal anode 2 and the metal cathode 3 are two non-adjacent surfaces, the space between the metal anode 2 and the metal cathode 3 can be made smaller, a space charge area can be formed in the CdZnTe crystal 1 only by smaller bias voltage, the drift time of the electron carriers and the hole carriers is shorter, the probability of being captured by defects is reduced, thereby improving the carrier collection efficiency.
As an optional embodiment, a metal anode 2 is disposed on one bottom surface of the CdZnTe crystal 1, and a metal cathode 3 is disposed on the other bottom surface, or when the CdZnTe crystal 1 is a straight prism having an even number of surfaces, the metal anode 2 is disposed on one surface of the CdZnTe crystal 1, and the metal cathode 3 is disposed on the other surface opposite to the anode surface, so that the metal anode 2 and the metal cathode 3 can be respectively disposed on the opposite surfaces of the CdZnTe crystal 1, and the arrangement of the metal electrodes is adopted to reduce the range in which the CdZnTe radiation detector cannot detect particles after bonding a plurality of CdZnTe crystals 1 to form the CdZnTe radiation detector, thereby further improving the charge collection efficiency of the CdZnTe radiation detector.
In order to make the technical solutions of the embodiments more clearly understood by those skilled in the art, the technical solutions of the embodiments of the present invention are specifically described below with reference to the accompanying drawings. It is to be understood that the following description is intended to be illustrative, and not restrictive. Taking the example where the CdZnTe crystal 1 is a rectangular parallelepiped and the metal anode 2 and the metal cathode 3 are provided on the opposite surfaces of the CdZnTe crystal 1, first, the surface on which the metal anode 2 is provided is referred to as an anode surface, and the surface on which the metal cathode 3 is provided is referred to as a cathode surface. As shown in fig. 3, which is a top view of a single CdZnTe crystal 1, a plurality of strip-shaped metal anodes 2 arranged at intervals are disposed on one surface of the CdZnTe crystal 1, and the plurality of metal anodes 2 are arranged along the side length direction of the anode surface. The other side opposite to the anode side is provided with a metal cathode 3, and the metal cathode 3 may be a planar structure, which may completely cover the entire cathode side. The thickness of the metal electrode is between 100nm and 1000nm, and the metal electrode comprises a metal anode 2 and a metal cathode 3. In this embodiment, the number, shape, and position of the metal anodes 2 on the anode surface are not limited, and the number, shape, and position of the metal cathodes 3 on the cathode surface are not limited.
Bonding two CdZnTe crystals 1 according to the mode that the metal anode 2 is bonded to the metal anode 2 and the electrode directions correspond in a mirror image manner, as shown in fig. 4, a plurality of metal anodes 2 are arranged on the surfaces, which are in contact, of the two bonded CdZnTe crystals, two metal cathodes 3 are respectively arranged on two sides of the two bonded CdZnTe crystals, the space on two sides of any one of the metal anodes 2 and the metal cathodes 3 on two sides form a three-dimensional effective pixel 4 together, and the three-dimensional effective pixel 4 is shown as a dotted line in fig. 4. The two pieces of CdZnTe crystals which are well bonded are the CdZnTe radiation detector with the three-dimensional electrode structure, and the charge collection efficiency of the CdZnTe radiation detector can be obviously improved.
The CdZnTe radiation detector composed of two bonded CdZnTe crystals is sectioned according to a line B-B', and the sectional effect diagram is shown in FIG. 5. When incident particles are incident from the top surface as shown in fig. 5, a large number of electron and hole carriers are excited in the body of the CdZnTe radiation detector. When the CdZnTe radiation detector works, the metal cathode 3 is applied with reverse bias voltage, and the metal anode 2 is applied with zero potential, so that electron carriers can drift to the metal anode 2 under the action of an external electric field, and hole carriers can drift to the metal cathode 3. The CdZnTe radiation detector formed by the metal electrode arrangement and bonding in this embodiment has the following advantages, except that the CdZnTe radiation detector has a three-dimensional electrode structure, which can significantly improve the charge collection efficiency of the CdZnTe radiation detector: (1) because the distance between the metal anode 2 and the metal cathode 3 of the CdZnTe crystal can be made smaller, the CdZnTe radiation detector can form a space charge area in the CdZnTe crystal 1 only by smaller bias voltage. (2) The distance between the metal anode 2 and the metal cathode 3 is smaller, the drift time of electron carriers and hole carriers is shorter, and the probability of being captured by defects is lower, so that the carrier collection efficiency is improved, and the collected hole carriers can become available signals. (3) According to the CdZnTe radiation detector, the effective thickness (w value shown in figure 5) of the CdZnTe of the detection ray particles is not limited by the energy of the detection particles, and even if the effective thickness of the CdZnTe of the detection ray particles is thicker, the drift distance of excited electron hole carriers is not increased after the low-energy ray particles enter the CdZnTe crystal 1, so that the detection range of the radiation detector is stronger in applicability.
As shown in fig. 6, a plurality of CdZnTe crystals are bonded in a manner that a metal anode 2 is bonded to a metal anode 2, a metal cathode 3 is bonded to a metal cathode 3, and all the metal anodes 2 are spatially parallel, so as to obtain the three-dimensional electrode radiation detector. By utilizing the bonding mode described in the embodiment, the problem that the CdZnTe crystal is difficult to directly manufacture into a three-dimensional electrode detector structure similar to a silicon-based radiation detector due to the fact that the CdZnTe crystal cannot be etched and other processes can be avoided, and therefore the charge collection efficiency of the CdZnTe radiation detector is improved.
It should be noted that, regarding the specific parameters of the detector: the width of the metal anode 2, the thickness of the CdZnTe crystal 1 (i.e., the distance between the metal anode 2 and the metal cathode 3), the distance between the anode surfaces of the metal anode 2, the number of pixels, and the effective thickness of the CdZnTe of the detected ray particles (w value shown in fig. 5) can be adjusted according to actual design requirements. In this embodiment, any one of the surfaces may be selected as a particle incident surface, any one of the surfaces not covered with the metal electrode may be selected as a particle incident surface, and a side where the crystal thickness is located may be selected as a particle incident surface.
Example 2:
the embodiment is used for providing a CdZnTe radiation detector, which comprises a plurality of CdZnTe crystals 1, wherein the CdZnTe crystals 1 are columnar. The CdZnTe crystal 1 is provided with metal anodes 2 on two nonadjacent surfaces, the surface provided with the metal anodes 2 is taken as an anode surface, and one or more surfaces adjacent to the two anode surfaces are provided with metal cathodes 3. And bonding the CdZnTe crystals 1 according to the mode that the metal anode 2 is jointed with the metal anode 2 to form a linear array to form the CdZnTe radiation detector.
Different from embodiment 1, in this embodiment, the arrangement positions of the metal anode 2 and the metal cathode 3 on the CdZnTe crystals 1 are changed, and after the plurality of CdZnTe crystals 1 are bonded by attaching the metal anode 2 to the metal anode 2, the CdZnTe radiation detector formed by the method is still a radiation detector with a three-dimensional electrode structure, and the problem that the CdZnTe crystals are difficult to directly manufacture into a three-dimensional electrode detector structure similar to a silicon-based radiation detector due to processes such as etching the CdZnTe crystals and the like can be still avoided, so that the charge collection efficiency of the CdZnTe radiation detector is improved.
As an alternative embodiment, the CdZnTe crystal 1 is provided with metal anodes 2 on both bottom faces and metal cathodes 3 on one or more side faces. Or when the CdZnTe crystal 1 is a straight prism with even number of surfaces, the two opposite surfaces of the CdZnTe crystal 1 are both provided with the metal anodes 2, and one or more surfaces vertical to the two anode surfaces are provided with the metal cathodes 3, so that the two opposite surfaces of the CdZnTe crystal 1 can be both provided with the metal anodes 2, and compared with the mode that the two surfaces which are not adjacent are both provided with the metal anodes 2, the arrangement mode of the metal electrodes is adopted, after a plurality of CdZnTe crystals 1 are bonded to form the CdZnTe radiation detector, the range in which ions can not be detected is small, and the charge collection efficiency of the CdZnTe radiation detector can be further improved.
In order to make the technical solutions of the embodiments more clearly understood by those skilled in the art, the technical solutions of the embodiments of the present invention are specifically described below with reference to the accompanying drawings. It is to be understood that the following description is intended to be illustrative, and not restrictive. Taking the example that the CdZnTe crystal 1 is a cuboid and the metal anodes 2 are arranged on the opposite surfaces of the CdZnTe crystal 1, the metal anode 2 grows on the opposite surface of each CdZnTe crystal 1, the metal cathode 3 grows on the common adjacent one of the two parallel anode surfaces, and a gap exists between the metal anode 2 and the metal cathode 3. Bonding the two CdZnTe crystals 1 according to the mode that the metal anode 2 is jointed with the metal anode 2 and the electrode direction is in mirror image correspondence, thus obtaining the CdZnTe radiation detector with the three-dimensional electrode structure, wherein the cross-sectional view of the CdZnTe radiation detector is shown in figure 7.
The CdZnTe radiation detector formed by the two bonded CdZnTe crystals 1 is sectioned according to a line C-C', and the sectional effect diagram is shown in FIG. 8. When incident particles are incident from the top surface as shown in fig. 8, a large number of electron-hole carriers are excited in the body of the CdZnTe radiation detector. When the CdZnTe radiation detector works, a reverse bias voltage is applied to the metal cathode 3, and a zero potential is applied to the metal anode 2, so that electron carriers can drift to the metal anode 2 under the action of an external electric field, and hole carriers can drift to the metal cathode 3. The CdZnTe radiation detector formed by the metal electrode arrangement and bonding in this embodiment has the following advantages, except that the CdZnTe radiation detector has a three-dimensional electrode structure, which can significantly improve the charge collection efficiency of the CdZnTe radiation detector: (1) because the thickness of the CdZnTe crystal 1 can be made smaller, the CdZnTe detector only needs smaller bias voltage to form a space charge area in the CdZnTe crystal 1. (2) The CdZnTe crystal 1 has the advantages that the crystal thickness is thin, the drift time of electron carriers is short, the probability of being captured by defects is low, and therefore the carrier collection efficiency is improved. (3) The effective thickness (w value shown in fig. 5) of the CdZnTe of the detection ray particles of the CdZnTe radiation detector is not limited by the energy of the detection particles. Even if the effective thickness of the CdZnTe of the detection ray particles is thicker, after the low-energy ray particles enter the CdZnTe crystal 1, the drift distance of excited electron hole carriers is not increased, so that the detection range applicability of the detector is stronger. (4) Since the metal cathode 3 is transferred to the other side perpendicular to the metal anode 2, the arrangement of the metal anode 2 is more flexible and can be designed more compactly.
Bonding a plurality of CdZnTe crystals 1 with the metal anode 2 according to the way that the metal anode 2 is attached to the metal anode 2 and all the metal anodes 2 are parallel in space, and finally obtaining the radiation detector with the structure as shown in FIG. 9. By utilizing the bonding mode described in the embodiment, the problem that the CdZnTe crystal is difficult to directly manufacture into a three-dimensional electrode detector structure similar to a silicon-based radiation detector due to the fact that the CdZnTe crystal cannot be etched and other processes can be avoided, and therefore the charge collection efficiency of the CdZnTe radiation detector is improved.
Example 3:
the embodiment is used for providing a CdZnTe radiation detector, which comprises a plurality of CdZnTe crystals 1, wherein the CdZnTe crystals 1 are columnar. The CdZnTe crystals 1 are provided with metal anodes 2 on the side surfaces, metal cathodes 3 are arranged on one or two bottom surfaces, and a plurality of CdZnTe crystals 1 are bonded in a mode that the metal anodes 2 are attached to the metal anodes 2 to form a surface array to form the CdZnTe radiation detector.
Different from the embodiment 1 and the embodiment 2, the present embodiment changes the arrangement positions of the metal anode 2 and the metal cathode 3, and still bonds the CdZnTe crystals 1 by attaching the metal anode 2 to the metal anode 2, so that the CdZnTe radiation detector formed is still a radiation detector with a three-dimensional electrode structure, and the problem that the CdZnTe crystals are difficult to directly manufacture into a three-dimensional electrode detector structure similar to a silicon-based radiation detector due to processes such as etching the CdZnTe crystals and the like can be still avoided, thereby improving the charge collection efficiency of the CdZnTe radiation detector.
As an alternative embodiment, as shown in fig. 10, the CdZnTe crystals 1 are square prisms, each CdZnTe crystal 1 is a rectangular parallelepiped having two square bottom surfaces, in which a metal anode 2 is grown around four sides of the square, and a metal cathode 3 is grown on the other side perpendicular to the four metal anodes 2. Thus, the periphery of each CdZnTe crystal 1 can be bonded with a new CdZnTe crystal 1, so that a radiation detector which is a surface array is formed, wherein a region formed by two CdZnTe crystals 1 is a three-dimensional effective pixel 4.
As shown in fig. 11, the CdZnTe crystal 1 is a regular hexagonal prism, and each individual CdZnTe crystal 1 is a cylinder having two base surfaces of a regular hexagon, in which a metal anode 2 is grown around six faces of the regular hexagon, and a metal cathode 3 is grown on the other face perpendicular to the six metal anodes 2. In this way, six weeks of each CdZnTe crystal 1 can be bonded with a new CdZnTe crystal 1 to form a radiation detector in the form of a planar array, in which the region formed by two CdZnTe crystals 1 is a three-dimensional effective pixel 4.
When the CdZnTe crystal 1 adopts two shapes of a regular quadrangular prism or a regular hexagonal prism, after a plurality of CdZnTe crystals 1 are bonded to form the CdZnTe radiation detector, the range of the CdZnTe radiation detector which can not detect ions is minimum, and the charge collection efficiency of the CdZnTe radiation detector can be further improved.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1. A CdZnTe radiation detector is characterized by comprising a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; a metal anode is arranged on one surface of the CdZnTe crystal, the surface provided with the metal anode is taken as an anode surface, and a metal cathode is arranged on the other surface which is not adjacent to the anode surface;
and bonding the plurality of CdZnTe crystals according to the mode that the metal anode is attached to the metal anode or the metal cathode is attached to the metal cathode to form a linear array to form the CdZnTe radiation detector.
2. A CdZnTe radiation detector according to claim 1, wherein the CdZnTe crystal is provided with the metal anode on one bottom surface and the metal cathode on the other bottom surface.
3. A CdZnTe radiation detector according to claim 1, characterized in that when the CdZnTe crystal is a straight prism with an even number of faces, the metal anode is arranged on one face of the CdZnTe crystal and the metal cathode is arranged on the other face opposite to the anode face.
4. A CdZnTe radiation detector is characterized by comprising a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; two nonadjacent surfaces of the CdZnTe crystal are provided with metal anodes, the surface provided with the metal anodes is taken as an anode surface, and one or more surfaces adjacent to the two anode surfaces are provided with metal cathodes;
and bonding the CdZnTe crystals according to the mode that the metal anode is attached to the metal anode to form a linear array to form the CdZnTe radiation detector.
5. A CdZnTe radiation detector according to claim 4, characterized in that the metal anodes are arranged on both bottom faces and the metal cathode is arranged on one or more side faces of the CdZnTe crystal.
6. A CdZnTe radiation detector according to claim 4, characterized in that, when the CdZnTe crystal is a straight prism with an even number of faces, the metal anodes are arranged on two opposite faces of the CdZnTe crystal, and a metal cathode is arranged on one or more faces perpendicular to both of the anode faces.
7. A CdZnTe radiation detector is characterized by comprising a plurality of CdZnTe crystals;
the CdZnTe crystal is columnar; metal anodes are arranged on the side surfaces of the CdZnTe crystal, and metal cathodes are arranged on one or two bottom surfaces;
and bonding the CdZnTe crystals according to the mode that the metal anode is attached to the metal anode to form a surface array to form the CdZnTe radiation detector.
8. A CdZnTe radiation detector according to claim 7, characterized in that the CdZnTe crystal is a regular quadrangular or regular hexagonal prism.
9. A CdZnTe radiation detector according to claim 1, 4 or 7, characterized in that the anode surface is provided with a plurality of spaced apart metal anodes.
10. A CdZnTe radiation detector according to claim 9, wherein a plurality of said metal anodes are arranged along the length of the side of said anode surface.
CN202110411194.4A 2021-04-16 2021-04-16 CdZnTe radiation detector Pending CN113140643A (en)

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CN202110411194.4A CN113140643A (en) 2021-04-16 2021-04-16 CdZnTe radiation detector

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Application Number Priority Date Filing Date Title
CN202110411194.4A CN113140643A (en) 2021-04-16 2021-04-16 CdZnTe radiation detector

Publications (1)

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CN113140643A true CN113140643A (en) 2021-07-20

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Family Applications (1)

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