CN113140578A - Electronic device - Google Patents

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Publication number
CN113140578A
CN113140578A CN202010376210.6A CN202010376210A CN113140578A CN 113140578 A CN113140578 A CN 113140578A CN 202010376210 A CN202010376210 A CN 202010376210A CN 113140578 A CN113140578 A CN 113140578A
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CN
China
Prior art keywords
light
electronic device
microlenses
stacking direction
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010376210.6A
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Chinese (zh)
Inventor
吴志彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fitipower Integrated Technology Inc
Original Assignee
Sunpay Technology Co ltd
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Filing date
Publication date
Application filed by Sunpay Technology Co ltd filed Critical Sunpay Technology Co ltd
Publication of CN113140578A publication Critical patent/CN113140578A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H01L27/14818—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Human Computer Interaction (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention provides an electronic device, which comprises a plurality of micro lenses, a light limiting structure, a first light transmitting structure and a sensing element. The microlenses are arranged in an array. The sensing element includes a plurality of sensing pixels. The sensing element, the first light transmission structure, the light limiting structure and the micro lenses are stacked in sequence in a stacking direction. Each sensing pixel corresponds to at least two of the microlenses in the stacking direction.

Description

Electronic device
Technical Field
The present disclosure relates to electronic devices, and particularly to an electronic device.
Background
At present, electronic devices are applied to fingerprint identification of smart phones, and a capacitive fingerprint identification system is the mainstream of the electronic devices. When the active and passive capacitance type fingerprint identification systems are attached to the smart phone, the active and passive capacitance type fingerprint identification systems can be used for unlocking and function starting. For the current market situation, the installation of the fingerprint identification system is mainly based on the back of the smart phone. If the front view area is mounted, a hole is opened or a thinning process is performed on the glass display area, which increases the processing cost. In addition, the fingerprint identification system in the market also comprises an ultrasonic fingerprint system and an optical fingerprint identification system. Because optical fingerprint identification has the high penetrability of light and can not carry out the trompil to the glass display area, can discern to characteristics such as fingerprint. Therefore, the optical fingerprint identification system has become the mainstream of the next generation fingerprint identification.
At present, there are several ways for an imaging system for optical fingerprint identification, such as reflective imaging, thin film reflective imaging, pinhole imaging, optical fiber imaging, or a larger fingerprint identification imaging system formed by combining multiple sets of lenses.
However, the trend of the optical fingerprint recognition system to be thin and mounted under a panel glass without forming a hole in the panel glass for application to the market of mobile devices, etc., causes difficulties in designing the optical fingerprint recognition system. For example, the thickness distribution of the glass panel of the display device falls within the range of 500 μm to 1mm, and the thickness of the light emitting element and the air layer of the display device, the designer must make the thickness of the fingerprint identification system less than 400 μm. Considering again that the thickness of the sensing element is about 200 μm and the thickness of the support substrate (e.g. printed circuit board) of the fingerprint recognition system is about 150 μm, the overall thickness of the remaining components is limited to the range of 50 μm.
Furthermore, because the resolution of fingerprinting must be at least 500dpi (dots per inch), the size of each pixel of the fingerprinting system must be less than 50 μm. However, such precise design and alignment cannot be achieved by molding or machining of lenses currently on the market.
Disclosure of Invention
The present invention is directed to an electronic device capable of satisfactorily disposing a microlens at a desired position even when the overall thickness of the electronic device is reduced.
An embodiment of an electronic device includes a plurality of microlenses, a light limiting structure, a first light transmitting structure, and a sensing element. The microlenses are arranged in an array. The sensing element includes a plurality of sensing pixels. The sensing element, the first light transmission structure, the light limiting structure and the micro lenses are stacked in sequence in a stacking direction. Each sensing pixel corresponds to at least two of the microlenses in the stacking direction.
In an embodiment of the invention, the electronic device further includes a second light-transmitting structure disposed between the microlenses and the light-limiting structure. The thickness of the second light-transmitting structure in the stacking direction falls within a range of 8 to 15 μm.
In an embodiment of the invention, the second light-transmitting structure is a passivation layer.
In an embodiment of the invention, the maximum height of the microlenses in the stacking direction falls within a range of 1 to 3 μm.
In an embodiment of the invention, the light limiting structure is a metal layer.
In an embodiment of the invention, the light limiting structure includes a plurality of light holes. The aperture of these light-transmitting holes falls within the range of 1 to 3 μm. Each microlens corresponds to one of the light transmission holes in the stacking direction.
In an embodiment of the invention, the first light-transmitting structure includes a plurality of inter-metal dielectric layers.
In an embodiment of the invention, the first light-transmitting structure further includes an inner dielectric layer disposed between the inner dielectric layers and the sensing element.
In an embodiment of the invention, a thickness of the first light-transmitting structure in the stacking direction falls within a range of 8 to 15 micrometers.
In an embodiment of the invention, the electronic device further includes a plurality of inner metal layers and a driving element. The inner metal layers are respectively embedded in the inner metal dielectric layers. The first light-transmitting structure is arranged between the light limiting structure and the driving element. The driving element is electrically connected with the sensing element and is electrically connected with the light limiting structure through the inner metal layers.
Based on the above, in the electronic device according to the embodiment of the invention, each sensing pixel corresponds to at least two microlenses in the plurality of microlenses in the stacking direction, so that the amount of incident light that can be received by each sensing pixel is increased. Therefore, the electronic device has better sensing effect.
Drawings
FIG. 1 is a schematic partial cross-sectional view of an electronic device according to an embodiment of the invention;
FIG. 2 is a diagram illustrating an electronic device according to an embodiment of the invention, wherein the sensing pixels correspond to microlenses.
Description of the reference numerals
100 electronic device
110 micro lens
120 light limiting structure
121 light hole
130 first light-transmitting structure
131 part of inter-metal dielectric layer
132 interlayer dielectric layer
140 sensing element
141 sensing pixel
150 second light-transmitting structure
160 inner metal layer
170 driving element
200 base plate
201 surface of
D, stacking direction
h is height
t is width
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is a partial cross-sectional view of an electronic device according to an embodiment of the invention. FIG. 2 is a diagram illustrating an electronic device according to an embodiment of the invention, wherein the sensing pixels correspond to microlenses. It should be noted that the relative thicknesses between the respective stack layers in fig. 1 and 2 are shown for clarity, and the relative thicknesses in the drawings do not reflect the actual relative thicknesses. Referring to fig. 1 and fig. 2, an electronic device 100 according to an embodiment of the invention includes a plurality of microlenses 110, a light limiting structure 120, a first light transmitting structure 130, and a sensing element 140. The sensing element 140, the first light transmitting structure 130, the light limiting structure 120 and the micro lens 110 are stacked in sequence in a stacking direction D.
Specifically, after the sensing element 140 is formed, the first light transmitting structure 130, the light limiting structure 120 and the microlens 110 are sequentially formed by a semiconductor process or a photolithography process, for example. In the present embodiment, the sensing element 140 includes a plurality of sensing pixels 141. The sensing element 140 may be a Complementary Metal-Oxide Semiconductor (CMOS) or a Charge Coupled Device (CCD). The microlens 110 is formed of a polymer material such as polymethyl methacrylate (PMMA) or other suitable materials.
In order to make the overall thickness of the electronic device 100 in the stacking direction D less than or equal to 50 micrometers after the sensing element 140 is removed, and make the microlens 110 be formed by a photolithography process, in the embodiment, the maximum height h of the microlens 110 in the stacking direction D falls within a range of 1 to 3 micrometers. Furthermore, in order to increase the resolution of the electronic device 100, the size of each sensing pixel 141 should be smaller than 50 μm. However, the size of 50 μm is too large for each microlens 110 formed by the photolithography process, and therefore, in the present embodiment, the plurality of microlenses 110 are arranged in an array, and each sensing pixel 141 corresponds to at least two microlenses 110 in the plurality of microlenses 110 in the stacking direction D. For example, each sensing pixel 141 at least partially overlaps with its corresponding at least two microlenses 110 in the stacking direction D.
Fig. 2 illustrates a substrate 200 disposed on the electronic device 100. The substrate is, for example, a transparent display panel such as an organic light emitting diode. When a finger of a user presses on the surface 201 of the substrate 200, the light beam emitted from the substrate 200 is reflected by the finger, and the reflected light beam is received by the sensing element 140 of the electronic device 100, so that the electronic device 100 obtains a fingerprint image. Fig. 2 illustrates that each sensing pixel 141 corresponds to a 2 × 2 microlens 110 array in the stacking direction D. However, the invention is not limited thereto, and each sensing pixel 141 may correspond to m × n, 1 × n or m × 1 microlens 110 arrays in the stacking direction D, where m and n are positive integers greater than or equal to 2.
Furthermore, in the present embodiment, the light limiting structure 120 is a metal layer, and the thickness of the light limiting structure 120 in the stacking direction D is less than or equal to 0.5 μm. The light limiting structure 120 includes a plurality of light transmission holes 121. The aperture t of the light-transmitting holes 121 falls within a range of 1 to 2 μm, and each microlens 110 corresponds to one of the light-transmitting holes 121 in the stacking direction D. For example, each microlens 110 overlaps its corresponding light-transmitting hole 121 in the stacking direction D.
In addition, in the present embodiment, the first light-transmitting structure 130 includes a plurality of Inter-Metal Dielectric (IMD) layers 131 and an Inter-layer Dielectric (ILD) layer 132. The inter-layer dielectric layer 132 is disposed between the inter-metal dielectric layer 131 and the sensing element 140. The inter-metal dielectric layer 131 and the inter-metal dielectric layer 132 may be an insulating material such as silicon dioxide or silicon nitride, but the invention is not limited thereto. Furthermore, the inter-metal dielectric layer 131 and the inter-layer dielectric layer 132 may be formed of the same material or different materials.
In the present embodiment, the thickness of the first light-transmitting structure 130 in the stacking direction D falls within a range of 8 to 15 micrometers. For convenience of illustration, fig. 1 simply illustrates four metal dielectric layers 131. However, the present invention is not limited thereto, and the number of the metal dielectric layers 131 should be determined according to design requirements.
In addition, in the present embodiment, the electronic device 100 further includes a second light-transmitting structure 150. The second light transmitting structure 150 is disposed between the microlens 110 and the light limiting structure 120. The second light-transmitting structure 150 may be a passivation layer (passivation layer) formed of an insulating material such as silicon oxide or silicon nitride, for preventing oxidation of each component in the electronic device 100.
Based on the above, in the electronic device 100 according to the embodiment of the invention, the arrangement of the microlens 110 and the light limiting structure 120 enables the reflected light beam to be well imaged on the sensing element 140. Although the arrangement of the microlenses 110 and the light limiting structure 120 limits the light receiving angle of the reflected light beam and also reduces the amount of incident light, each sensing pixel 141 can receive an increased amount of incident light because each sensing pixel 141 corresponds to at least two microlenses 110 in the plurality of microlenses 110 in the stacking direction D. Therefore, the electronic device 100 has a better sensing effect. Furthermore, by increasing the thickness of the second light-transmitting structure 150, the light-receiving angle of the reflected light beam can be further limited, and the optical path length of the reflected light beam from the microlens 110 to the sensing element 140 is also increased, at this time, the depth of view (DOF) of the electronic device 100 is also increased. In the present embodiment, the thickness of the second light-transmitting structure 150 in the stacking direction D preferably falls within a range of 8 to 15 micrometers.
In addition, in the present embodiment, the electronic device further includes a plurality of inner metal layers 160 and a driving element 170. The first light-transmitting structure 130 is disposed between the light limiting structure 120 and the driving element 170. The inner metal layers 160 are respectively embedded in the inner metal dielectric layers 131 and electrically connected to the light confining structure 120. The driving element 170 is electrically connected to the sensing element 140 and electrically connected to the light limiting structure 120 through the inner metal layer 160. That is, the light confining structure 120, the inner metal layer 160, and the driving element 170 may be part of a control circuit for controlling the sensing element 140. In the present embodiment, the driving element 170 may be a transistor (transistors) circuit layer formed by a semiconductor process. The inner dielectric layer 132 of the first light-transmitting structure 130 covers the sensing element 140 and the driving element 170, so that other stacked layers can be sequentially stacked on the inner dielectric layer 132. The metal dielectric layer 131 of the first light-transmitting structure 130 is used to prevent the metal layers 160 from being in direct contact with each other and causing short circuit.
In summary, in the electronic device according to the embodiment of the invention, the arrangement of the microlens and the light limiting structure enables the reflected light beam to be well imaged on the sensing element. Furthermore, each sensing pixel corresponds to at least two microlenses in the plurality of microlenses in the stacking direction, so that the light incident amount which can be received by each sensing pixel is increased. Therefore, the electronic device has better sensing effect. Moreover, the electronic device of the embodiment of the invention can form the micro-lens array in a smaller range compared with the lens formed by molding or machining, and each micro-lens can still be well arranged at a required position. In addition, by increasing the thickness of the second light-transmitting structure, the light-receiving angle of the reflected light beam can be further limited, and the optical path of the reflected light beam from the micro-lens to the sensing element is increased, so that the image-taking depth of the electronic device is increased.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. An electronic device, comprising:
a plurality of microlenses arranged in an array;
a light-limiting structure;
a first light-transmitting structure; and
a sensing element including a plurality of sensing pixels;
the sensing element, the first light-transmitting structure, the light limiting structure and the plurality of microlenses are stacked in sequence in a stacking direction, and each sensing pixel corresponds to at least two microlenses of the plurality of microlenses in the stacking direction.
2. The electronic device of claim 1, further comprising a second light-transmitting structure disposed between the plurality of microlenses and the light-confining structure, the second light-transmitting structure having a thickness in the stacking direction that falls within a range of 8 to 15 microns.
3. The electronic device according to claim 2, wherein the second light-transmitting structure is a passivation layer.
4. The electronic device of claim 1, wherein a maximum height of the plurality of microlenses in the stacking direction falls within a range of 1 to 3 microns.
5. The electronic device of claim 1, wherein the light confining structure is a metal layer.
6. The electronic device of claim 1, wherein the light limiting structure comprises a plurality of light-transmissive holes having an aperture in a range of 1 to 2 microns, each microlens corresponding to one of the plurality of light-transmissive holes in the stacking direction.
7. The electronic device according to claim 1, wherein the first light-transmitting structure comprises a plurality of inter-metal dielectric layers.
8. The electronic device of claim 7, wherein the first light-transmitting structure further comprises an inner dielectric layer disposed between the plurality of inner metal dielectric layers and the sensing element.
9. The electronic device according to claim 1, wherein a thickness of the first light-transmitting structure in the stacking direction falls within a range of 8 to 15 micrometers.
10. The electronic device of claim 7, further comprising:
a plurality of inner metal layers respectively embedded in the plurality of inner metal dielectric layers; and
the driving element is arranged between the light limiting structure and the driving element, and the driving element is electrically connected with the sensing element and is electrically connected with the light limiting structure through the plurality of inner metal layers.
CN202010376210.6A 2020-01-20 2020-05-07 Electronic device Pending CN113140578A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062963188P 2020-01-20 2020-01-20
US62/963,188 2020-01-20

Publications (1)

Publication Number Publication Date
CN113140578A true CN113140578A (en) 2021-07-20

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116828923A (en) * 2022-03-21 2023-09-29 群创光电股份有限公司 Light emitting device

Citations (3)

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Publication number Priority date Publication date Assignee Title
TW201428326A (en) * 2013-01-11 2014-07-16 Pixart Imaging Inc Optical apparatus, light sensitive device with micro-lens and manufacturing method thereof
TW201512693A (en) * 2013-05-28 2015-04-01 Pixart Imaging Inc Optical apparatus and light sensitive device with micro-lens
US20180301494A1 (en) * 2017-04-17 2018-10-18 Samsung Electronics Co., Ltd. Optical sensors including a light-impeding pattern

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Publication number Priority date Publication date Assignee Title
CN107105141B (en) * 2017-04-28 2019-06-28 Oppo广东移动通信有限公司 Imaging sensor, image processing method, imaging device and mobile terminal
CN110164897B (en) * 2019-06-06 2021-09-14 德淮半导体有限公司 Phase focusing image sensor and forming method thereof
CN110493504B (en) * 2019-08-29 2021-07-30 Oppo广东移动通信有限公司 Image sensor, imaging system and terminal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201428326A (en) * 2013-01-11 2014-07-16 Pixart Imaging Inc Optical apparatus, light sensitive device with micro-lens and manufacturing method thereof
TW201512693A (en) * 2013-05-28 2015-04-01 Pixart Imaging Inc Optical apparatus and light sensitive device with micro-lens
US20180301494A1 (en) * 2017-04-17 2018-10-18 Samsung Electronics Co., Ltd. Optical sensors including a light-impeding pattern

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TW202129371A (en) 2021-08-01

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Effective date of registration: 20231123

Address after: Floor 3, No. 6-8, Duxing Road, Hsinchu Science Park, Hsinchu, Taiwan, China, China

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Applicant before: Sunpay Technology Co.,Ltd.

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