CN113140478B - Nondestructive testing method for thickness of semiconductor doped layer - Google Patents

Nondestructive testing method for thickness of semiconductor doped layer Download PDF

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CN113140478B
CN113140478B CN202110423512.9A CN202110423512A CN113140478B CN 113140478 B CN113140478 B CN 113140478B CN 202110423512 A CN202110423512 A CN 202110423512A CN 113140478 B CN113140478 B CN 113140478B
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bias voltage
reverse bias
thickness
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layer
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黄海林
冯淦
赵建辉
钱卫宁
刘杰
梁瑞
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Hantiantiancheng Electronic Technology Xiamen Co ltd
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract

The invention relates to a nondestructive testing method for the thickness of an epitaxial layerThe method comprises the following steps: obtaining the doping concentration of the epitaxial layer; obtaining a reverse bias voltage value V: the probe is used for contacting with the epitaxial layer to form a Schottky junction, gradually increased reverse bias voltage is applied to the Schottky junction, and a reverse bias voltage value V when the current obviously changes is recorded; according to the formula
Figure DDA0003028777300000011
And calculating to obtain the value d, namely the thickness of the epitaxial layer. The nondestructive detection method for the thickness of the epitaxial layer has the advantages that the thickness detection precision of the epitaxial layer with the thickness of less than 5 microns is 0.01 micron, the minimum detection thickness is 0.1 micron, the expansion and the accuracy of the epitaxial layer detection technology are greatly promoted, and the nondestructive detection method has the advantages of high precision and nondestructive detection.

Description

Nondestructive testing method for thickness of semiconductor doped layer
Technical Field
The invention relates to the technical field of thickness detection, in particular to a nondestructive detection method for the thickness of a semiconductor doped layer.
Background
The current nondestructive testing principle for the thickness of the 4H silicon carbide epitaxial layer is mainly infrared reflectometry (FTIR), as shown in fig. 1, the specific principle is as follows: the 4H silicon carbide substrate and the epitaxial layer have different refractive indexes due to different doping concentrations, so that continuous interference fringes reflecting the thickness information of the epitaxial layer can appear in the reflection spectrum of the sample, and the corresponding thickness of the epitaxial layer can be calculated according to the extreme value peak position of the interference fringes in the reflection spectrum, the optical constant of the sample and the incident angle.
The instrument for detecting by using the principle can be further divided into a double-beam infrared spectrophotometer or a Fourier transform infrared spectrometer, but in actual detection, the two instruments using the principle are difficult to detect the actual thickness of the epitaxial layer with the thickness less than 5 microns, and the root of the detection is that when the actual thickness of the epitaxial layer is less than 5 microns, the generated interference fringes are weak, and extreme peaks are difficult to distinguish.
It has been proposed by the scholars to measure the thickness of the SDB silicon film by CV method. The CV method is based on the principle that the relation between potential barrier capacitance and reverse bias voltage is used for solving the doping concentration, and the approximate formula of the CV method is
Figure BDA0003028777280000011
w is the distance from the semiconductor surface, N (w) is the doping concentration at w, and C is the capacitance measured under reverse bias. The thickness d ═ w ═ epsilon of the epitaxial layer is obtained from the distance at which the transition of N (w) occursrε0/C。
However, in this complicated process, it is necessary to utilize
Figure BDA0003028777280000012
The doping concentration is iteratively corrected,
Figure BDA0003028777280000013
is under reverse bias corresponding to wiThe measured value of (a) is measured,
Figure BDA0003028777280000014
is wiAnd wi-1The difference between the measured capacitance values is measured,
Figure BDA0003028777280000021
is wiCalculating the difference between the capacitance C and the measured capacitance C at the end of the iteration, k being the iteration number, Δ N (w)i) The correction amount of the doping concentration before the next iteration.
Because iterative correction is needed, the method has the problems of non-uniqueness and non-convergence when the impurity concentration is solved, and the accurate thickness cannot be obtained. Although the literature mentions that the thickness of the epitaxial layer can be measured by using a point-by-point back-solving multi-cycle algorithm and a CV method, the algorithm is complex, and the accuracy under different parameters is difficult to guarantee, so that the method is difficult to popularize and use in industrial practical application.
In the prior art, the epitaxial layer thickness is also detected by a Secondary Ion Mass Spectrometry (SIMS) method and an extended resistance process (SRP), although the two methods can detect the actual thickness of the epitaxial layer with the thickness less than 5 microns, the two methods both damage the sample, cause the rejection of the sample after detection, and cannot achieve the effect of nondestructive detection.
Disclosure of Invention
The invention aims to overcome the problems in the existing silicon carbide P-type epitaxial layer thickness detection, and provides a nondestructive epitaxial layer thickness detection method, which can detect the actual thickness of an epitaxial layer with the thickness less than 5 microns and can detect the condition that the actual thickness of the epitaxial layer is 0.1 micron at minimum.
The method is suitable for detecting the thickness of a semiconductor doping layer, for example, a semiconductor made of silicon carbide, specifically, 4H silicon carbide P-type epitaxial layer, but the method is not limited to 4H type, and is not limited to P type or N type, and the detection precision of the P type is higher than that of the N type because the current change of the P type doping layer is more obvious than that of the N type.
The semiconductor doping layer of the present invention is required to have a uniform doping concentration, so that the doping concentration N can be determined. The layer to be detected is a layer on the surface of the object, and when a plurality of continuous doped layers exist on the surface of the object, the doping thickness of the outermost layer can be detected, provided that the doping gradient of the layer and the doping gradient of the next layer are in step change, namely the doping concentration is different by at least 1-2 orders of magnitude.
The CV method forms a schottky barrier by contacting the front surface of a silicon carbide epitaxial wafer with a mercury probe to form a schottky contact. A reverse bias voltage is applied between the mercury probe and the silicon carbide epitaxial wafer, and the barrier width of the junction is expanded into the epitaxial layer. And calculating the carrier concentration of the silicon carbide epitaxial layer corresponding to the corresponding expansion width through the potential barrier capacitance of the junction, the change relation between the potential barrier capacitance and the bias voltage applied to the potential barrier capacitance, and the relation between the potential barrier expansion width and the carrier concentration corresponding to the corresponding expansion width. In particular, using depletion layer thickness formulas, i.e.
Figure BDA0003028777280000031
Performing a calculation in which NAAnd NDRespectively, acceptor concentration and donor concentration,. epsilonrIs the relative dielectric constant of the semiconductor,. epsilon0Is a vacuum dielectric constant, q is an electron charge amount, VbiIs a built-in electric field potential difference.
The CV method calculates the doping concentration and simultaneously calculates the detection depth, and is not accurate enough due to the problems of uniqueness and non-convergence, and is generally used for calculating the doping concentration.
The invention considers that the concentration detection and the thickness detection are separated, and the thickness is detected by utilizing the relation between the depletion depth and the reverse bias voltage and the doping concentration on the premise of knowing the accurate doping concentration, so that the problems of non-uniqueness and non-convergence of the CV method can be avoided. On the basis, for the Schottky junction, the inventor simplifies the calculation formula of the depletion layer width into a formula
Figure BDA0003028777280000032
And applying the formula to obtain the epitaxial layer thickness.
By applying a gradually increasing reverse bias voltage to the schottky junction, when the reverse bias voltage increases, a depletion layer region of the schottky junction in the P-type epitaxial layer becomes wider, and an internal electric field is enhanced. However, when the reverse bias voltage is increased to a certain value, the P-type epitaxial layer will be completely depleted, and at this time, if the voltage is continuously increased, the internal electric field in the epitaxial layer will not change any more, and the current in the loop will change obviously. The reverse bias voltage value V at which a significant change in current occurs is recorded. At the moment, the depletion depth d can be calculated by substituting the reverse bias voltage value V into a formula on the premise of accurately measuring the doping concentration, namely the thickness of the epitaxial layer. Specifically, the obvious change of the current in the invention means that when the reverse bias voltage is small, the current is a stable small current value, and the current and the reverse bias voltage have no positive correlation; when the reverse bias voltage is large enough, the current is increased rapidly along with the increase of the reverse bias voltage, the current is in positive correlation with the reverse bias voltage, the position where the current is in positive correlation with the reverse bias voltage is recorded, the epitaxial layer is completely exhausted at the moment, and the reverse bias voltage value V when the semiconductor doping layer to be detected is completely exhausted is recorded.
The minimum detection thickness of the detection method is 0.1 micron, because the current variation amplitude along with the voltage and the detection precision of the current and the voltage are limited together.
The specific scheme is as follows:
a nondestructive testing method for the thickness of a semiconductor doped layer comprises the following steps:
obtaining the doping concentration N of a semiconductor doping layer, wherein the doping concentration in the semiconductor doping layer is uniform;
obtaining a reverse bias voltage value V: the method comprises the steps that a metal probe is used for being in contact with a semiconductor doping layer to form a Schottky junction, gradually increased reverse bias voltage is applied to the Schottky junction, current does not change along with the change of the reverse bias voltage at first, the semiconductor doping layer is depleted along with the gradual increase of the reverse bias voltage, the current is increased along with the increase of the reverse bias voltage, and a reverse bias voltage value V when the semiconductor doping layer is depleted is recorded;
according to the formula
Figure BDA0003028777280000041
Performing a calculation in whichrIs the relative dielectric constant of the semiconductor,. epsilon0Is a vacuum dielectric constant, q is an electron charge amount, VbiAnd substituting the obtained reverse bias voltage value V into a formula for the built-in electric field potential difference, and calculating the value d, namely the thickness of the semiconductor doped layer.
Further, the semiconductor doping layer is a silicon carbide epitaxial layer, and preferably is a P-type doping epitaxial layer or an N-type doping epitaxial layer.
Further, the concentration of the semiconductor doping layer is detected by a four-probe method, a three-probe method or a raman spectroscopy method, and the doping concentration of the semiconductor doping layer is obtained.
Further, in the process of obtaining the reverse bias voltage value V, the reverse bias voltage is applied from 0V, the voltage value is gradually increased, and the step pitch is increased by 30-60mV until the current is remarkably increased.
Further, in the process of applying the gradually increased reverse bias voltage to the schottky junction, when the reverse bias voltage is smaller, the current is a stable small current value, and the current and the reverse bias voltage do not have positive correlation; when the reverse bias voltage is large enough, the current is increased rapidly along with the increase of the reverse bias voltage, positive correlation exists between the current and the reverse bias voltage, the position where the positive correlation between the current and the reverse bias voltage begins to appear is recorded, and the corresponding reverse bias voltage value V is recorded.
Further, the step-by-step increased reverse bias voltage is applied to the schottky junction, the metal probe is in contact with the surface of the semiconductor doping layer to form schottky contact, the other surface of the semiconductor, far away from the doping layer, is in contact with the metal carrying disc to form ohmic contact, and a power supply applies reverse voltage through the metal carrying disc and the metal probe.
Has the advantages that:
in the nondestructive detection method for the thickness of the epitaxial layer, firstly, the doping concentration of the epitaxial layer is detected, for example, a four-probe method, a three-probe method or a Raman spectroscopy method which can detect more accurately can be adopted, on the premise that the accurate doping concentration of the epitaxial layer is detected, reverse voltage is applied to a Schottky junction depletion region in a P-type epitaxial layer, the thickness of the depletion layer is solved by utilizing the relation between the depletion depth d and a reverse bias voltage value V, the more accurate thickness of the epitaxial layer is obtained, and the method is not limited by the detection range of a common FTIR detection mode. FITR can only detect the thickness of the epitaxial layer more than 5 microns, and for the epitaxial layer with the thickness less than 5 microns, the detection precision and accuracy of an FTIR detection mode are greatly reduced, and even the thickness value cannot be detected.
The nondestructive detection method for the thickness of the epitaxial layer has the advantages that the thickness detection precision of the epitaxial layer with the thickness of less than 5 microns is 0.01 micron, the minimum detection thickness is 0.1 micron, the expansion and the accuracy of the epitaxial layer detection technology are greatly promoted, and the nondestructive detection method has the advantages of high precision and nondestructive detection.
Drawings
In order to illustrate the technical solution of the present invention more clearly, the drawings will be briefly described below, and it is apparent that the drawings in the following description relate only to some embodiments of the present invention and are not intended to limit the present invention.
FIG. 1 is a schematic diagram of an FTIR detection method provided in the background of the invention;
FIG. 2 is a schematic diagram of the detection provided in one embodiment 1 of the present invention;
FIG. 3 is a graph of FTIR measurements provided by comparative example 1 of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. The examples do not specify particular techniques or conditions, and are performed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available. In the following examples, "%" means weight percent, unless otherwise specified.
Example 1
Detecting the thickness of the epitaxial layer of the 4H silicon carbide wafer, wherein the device principle refers to FIG. 2, and the specific detection process is as follows:
firstly, measuring a concentration value of a P-type epitaxial layer by using a four-probe method: N-1.42E 15cm-3。
And secondly, contacting the Hg metal probe with the P-type epitaxial layer, and applying a reverse bias voltage to the Schottky junction formed by the Hg metal and the P-type epitaxial layer, wherein when the voltage value is increased to 10.25V, the current starts to increase obviously. Record the voltage value at this time: V10.25V.
Thirdly, the concentration value of the epitaxial layer is: N-1.42E 15cm-3And reverse bias voltage value: substituting formula of V10.25V
Figure BDA0003028777280000071
Middle, epsilonr、ε0Q and VbiAll known constants are known, and the epitaxial layer thickness can be calculated by referring to a related technical manual as follows: d is 3.22 μm.
Example 2
Detecting the thickness of the epitaxial layer of the 4H silicon carbide wafer, wherein the specific detection process is as follows: firstly, measuring a concentration value of a P-type epitaxial layer by using a four-probe method: N-5.17E 15cm-3。
Secondly, a Hg metal probe is used to contact the P-type epitaxial layer, reverse bias voltage is applied to a Schottky junction formed by Hg metal and P-type epitaxy, and when the voltage value is increased to 130.40V, the current begins to increase obviously. Record the voltage value at this time: and V is 130.40V.
Thirdly, the concentration value of the epitaxial layer is: N-5.17E 15cm-3And reverse bias voltage value: substitution formula of V-130.40V
Figure BDA0003028777280000072
Middle, epsilonr、ε0Q and VbiAll known constants are known, and the epitaxial layer thickness can be calculated by referring to a related technical manual as follows: d is 5.99 μm.
The 4H silicon carbide wafer was additionally subjected to other detection methods, wherein the thickness was 5.97 μm by FTIR detection and 5.94 μm by SIMS detection.
Comparative example 1
The 4H silicon carbide wafer of example 1 was examined by infrared reflectometry, as shown in fig. 3, with the ordinate being relative intensity. As can be seen from fig. 3, a plurality of peaks, for example, peaks at 1.09 and 4.062 μm appear in the FTIR detection result, and it is judged that epitaxial layers having a plurality of thicknesses, for example, 1.09 μm and 4.062 μm exist according to conventional knowledge, but actually, the 4H silicon carbide wafer in example 1 has only one epitaxial layer having a thickness d of 3.22 μm, and thus, this thickness cannot be accurately detected by the infrared reflectometry.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.

Claims (5)

1. A nondestructive testing method for the thickness of a semiconductor doped layer is characterized in that: the method comprises the following steps:
obtaining the doping concentration N of a semiconductor doping layer, wherein the doping concentration in the semiconductor doping layer is uniform;
obtaining a reverse bias voltage value V: the method comprises the steps that a metal probe is used for being in contact with a semiconductor doping layer to form a Schottky junction, gradually increased reverse bias voltage is applied to the Schottky junction, current does not change along with the change of the reverse bias voltage at first, the semiconductor doping layer is depleted along with the gradual increase of the reverse bias voltage, the current is increased along with the increase of the reverse bias voltage, and a reverse bias voltage value V when the semiconductor doping layer is depleted is recorded; in the process of applying the gradually increased reverse bias voltage to the Schottky junction, when the reverse bias voltage is smaller, the current is a stable small current value, and the current is not positively correlated with the reverse bias voltage; when the reverse bias voltage is large enough, the current is increased rapidly along with the increase of the reverse bias voltage, the current is positively correlated with the reverse bias voltage, and the position where the positive correlation of the current and the reverse bias voltage begins to appear is recorded, so that the corresponding reverse bias voltage value V is recorded;
the step-by-step increased reverse bias voltage is applied to the Schottky junction, the metal probe is contacted with the surface of the semiconductor doping layer to form Schottky contact, the other surface of the semiconductor, far away from the doping layer, is contacted with the metal carrying disc to form ohmic contact, and a power supply applies reverse voltage through the metal carrying disc and the metal probe;
according to the formula
Figure FDA0003374563990000011
Performing a calculation in whichrIs the relative dielectric constant of the semiconductor,. epsilon0Is a vacuum dielectric constant, q is an electron charge amount, VbiAnd substituting the obtained reverse bias voltage value V into a formula for the built-in electric field potential difference, and calculating the value d, namely the thickness of the semiconductor doped layer.
2. The method for nondestructive testing of the thickness of the semiconductor doped layer according to claim 1, wherein: the semiconductor doping layer is a silicon carbide epitaxial layer.
3. The method for nondestructive testing of the thickness of the doped semiconductor layer according to claim 2, wherein: the semiconductor doping layer is a P-type doping epitaxial layer or an N-type doping epitaxial layer.
4. The method for nondestructive testing of the thickness of the semiconductor doped layer according to claim 1, wherein: and detecting the concentration of the semiconductor doping layer by a four-probe method, a three-probe method or a Raman spectroscopy method to obtain the doping concentration of the semiconductor doping layer.
5. The method for nondestructive testing of the thickness of a semiconductor doped layer according to any one of claims 1 to 4, wherein: in the process of obtaining the reverse bias voltage value V, the reverse bias voltage is applied from 0V, the voltage value is gradually increased, and the step pitch is increased by 30-60mV until the current is remarkably increased.
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