CN113140451A - Manufacturing method and intermediate of semiconductor device - Google Patents
Manufacturing method and intermediate of semiconductor device Download PDFInfo
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- CN113140451A CN113140451A CN202110311450.2A CN202110311450A CN113140451A CN 113140451 A CN113140451 A CN 113140451A CN 202110311450 A CN202110311450 A CN 202110311450A CN 113140451 A CN113140451 A CN 113140451A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 8
- 238000001883 metal evaporation Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003592 biomimetic effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, and discloses a manufacturing method and an intermediate of a semiconductor device, wherein the method comprises the following steps: performing third baking on the second photoresist layer to enable the protruding portion, located above the first groove, of the second photoresist layer to tilt in the direction away from the substrate, wherein the included angle between the protruding portion and the substrate is a first included angle, and the first included angle is larger than zero degree; depositing a metal layer on the substrate; and stripping the first photoresist layer, the second photoresist layer, the metal layer deposited on the upper surface of the second photoresist layer and the metal layer on the side wall of the second groove to leave the required metal electrode on the substrate. The invention has the beneficial effects that: the second photoresist layer is baked for the third time, so that the protruding part above the first groove tilts upwards, the connection between the metal layer on the side wall of the second groove and the metal layer on the upper surface of the second photoresist layer is enhanced, the metal layers are stripped together during stripping, and the short circuit of a device caused by the fact that the metal layers are attached to a metal electrode or a substrate due to tearing is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method and an intermediate of a semiconductor device.
Background
At present, in the manufacturing process of LED and compound semiconductor devices, metal evaporation and stripping are common methods for forming metal electrodes on the surface of a substrate. The general flow is as follows: gluing, exposing, developing, metal evaporating and metal stripping. In order to facilitate stripping, the opening of the developed photoresist pattern should be in an inverted T shape with a narrow top and a wide bottom, so that the metal layer on the photoresist and the metal electrode on the substrate are disconnected after the metal is evaporated, and the subsequent metal stripping is facilitated.
When the metal is evaporated, the metal atomic beam has a certain divergence angle, and after the metal is evaporated, besides the deposited metal on the surface of the photoresist on the uppermost layer, the metal is also deposited on the side wall of the photoresist on the uppermost layer, but the thickness of the metal layer deposited on the side wall is obviously smaller than the thickness of the metal on the surface of the photoresist. Therefore, when the metal is stripped, the metal layer on the side wall of the photoresist groove can be torn off from the metal layer on the upper surface of the photoresist, and the torn metal remains on the edge of the electrode and the surface of the substrate, so that the device is short-circuited.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method for manufacturing the semiconductor device solves the problem that when metal is stripped, a metal layer on the side wall of a photoresist groove is likely to be torn off from a metal layer on the upper surface of the photoresist, and the torn metal remains on the edge of an electrode and the surface of a substrate, so that the device is short-circuited.
In order to solve the above technical problem, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
and carrying out third baking on the second photoresist layer to tilt the protruding part of the second photoresist layer above the first groove towards the direction away from the substrate, wherein the included angle between the protruding part and the substrate is a first included angle, and the first included angle is greater than zero degree.
And depositing a metal layer on the substrate, wherein the metal layer comprises a metal layer on the upper surface of the second photoresist, a metal layer on the side wall of the second groove and a metal electrode in the first groove.
And stripping the first photoresist layer, the second photoresist layer, the metal layer deposited on the upper surface of the second photoresist layer and the metal layer on the side wall of the second groove to leave the required metal electrode on the substrate.
First photoresist layer and second photoresist layer of coating in proper order on the substrate from the bottom up, wherein, there is first recess on the first photoresist layer, there is the second recess on the second photoresist layer, the second recess is less than first recess directly over first recess and the width of second recess.
Further, the first included angle ranges from five degrees to fifteen degrees.
Further, the baking temperature of the third baking is 100-130 ℃, and the baking time is 1-5 min.
Further, the depositing on the substrate forms a metal layer, specifically:
and forming a metal layer on the substrate by metal evaporation.
Further, a first photoresist layer and a second photoresist layer are sequentially coated on the substrate from bottom to top, specifically:
uniformly coating a first photoresist on a substrate, wherein the thickness of the formed first photoresist layer is larger than that of a metal electrode to be deposited;
carrying out first baking on the first photoresist layer, and removing a first solvent remained in the first photoresist layer;
uniformly coating a second photoresist on the first photoresist layer to form a second layer of photoresist;
and carrying out second baking on the second photoresist layer, and removing the residual second solvent in the second photoresist layer.
Further, the method for forming the first groove and the second groove comprises the following steps:
and carrying out exposure and development treatment on the first photoresist layer and the second photoresist layer to enable the first photoresist layer to form a first groove and the second photoresist layer to form a second groove.
Further, the stripping the first photoresist layer, the second photoresist layer and the metal layer deposited on the upper surface of the second photoresist layer and the side wall of the second groove specifically includes:
and stripping the first photoresist layer, the second photoresist layer and the metal layer deposited on the upper surface of the second photoresist layer and the side wall of the second groove by using an organic solution.
The invention also discloses an intermediate of a semiconductor device, which is obtained by applying the manufacturing method and comprises a substrate, wherein a first photoresist layer and a second photoresist layer are sequentially coated on the substrate from bottom to top, the first photoresist layer is provided with a first groove, the second photoresist layer is provided with a second groove, the second groove is right above the first groove, and the width of the second groove is smaller than that of the first groove; the second photoresist layer is located the protruding portion of first recess top and to the direction perk of keeping away from the substrate, the contained angle of protruding portion and substrate is first contained angle, first contained angle is greater than the zero degree.
Further, the first included angle ranges from five degrees to fifteen degrees.
Further, the substrate is provided with a metal layer formed by deposition, and the metal layer comprises a metal layer on the upper surface of the second photoresist, a metal layer on the side wall of the second groove and a metal electrode in the first groove.
Compared with the prior art, the manufacturing method of the semiconductor device has the advantages that: the second photoresist layer is baked for the third time, so that the protruding part of the second photoresist layer above the first groove tilts towards the direction far away from the substrate, the protruding part tilts upwards to thicken the metal layer on the side wall of the second groove when the metal layer is formed on the substrate, the metal layer on the side wall of the second groove is connected with the metal layer on the upper surface of the second photoresist layer, and the metal layer is stripped together with the metal layer when being stripped, so that the short circuit of a device caused by the fact that the metal layer is attached to a metal electrode or the substrate due to tearing is avoided.
Compared with the prior art, the intermediate part of the semiconductor device can ensure that the metal layer and the photoresist layer are stripped together when the metal layer and the photoresist layer are stripped, and can not be attached to a metal electrode or a substrate to cause short circuit of the device due to tearing.
Drawings
FIG. 1 is a schematic view of a substrate of the present invention without a third bake;
FIG. 2 is a schematic view of a substrate during a third bake of the present invention;
FIG. 3 is a schematic illustration of the present invention for depositing a production metal layer on a substrate;
FIG. 4 is a schematic representation of a substrate after a stripping operation of the present invention.
In the figure, 1, a substrate; 2. a first photoresist layer; 3. a second photoresist layer; 4. a protruding portion; 5. a second groove; 6. a first groove; 7. a first included angle; 8. a metal layer on the upper surface of the second photoresist layer; 9. a metal layer on the side wall of the second groove; 10 metal electrodes.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the term "metal evaporation" is used in the present invention specifically as follows: a metal layer is formed on a substrate with a beam of metal atoms.
Example 1:
as shown in fig. 1 to 4, an embodiment of the present invention discloses a method for manufacturing a semiconductor device, which includes the following specific steps:
and carrying out third baking on the second photoresist layer 3 to tilt the protruding part 4 of the second photoresist layer 3 above the first groove 6 towards the direction far away from the substrate 1, wherein the included angle between the protruding part 4 and the substrate 1 is a first included angle 7, and the first included angle 7 is larger than zero degree. As shown in fig. 1, when the second photoresist layer 3 is not baked, the protruding portion 4 is in a horizontal state, the included angle between the protruding portion 4 and the substrate 1 is zero, and the state of fig. 2 is changed after the third baking, and the protruding portion 4 is tilted upward.
A metal layer 9 is deposited on the substrate 1. The metal layer 9 comprises a metal layer 8 on the upper surface of the second photoresist, a metal layer 9 on the side wall of the second groove and a metal electrode 10 in the first groove 6. As shown in fig. 3, the deposition of the metal forms a metal layer, forming a metal layer 8 on the upper surface of the second photoresist layer, a metal layer 9 on the sidewalls of the second recess, and a metal electrode 10 on the substrate.
And stripping the first photoresist layer 2, the second photoresist layer 3, the metal layer 8 deposited on the upper surface of the second photoresist layer and the metal layer 9 deposited on the side wall of the second groove to leave the required metal electrode 10 on the substrate 1. After the stripping, the desired metal electrode 10 remains on the substrate 1, as illustrated in fig. 4.
Through carrying out third baking on the second photoresist layer 3, the protruding part 4 of the second photoresist layer 3 above the first groove 6 tilts towards the direction far away from the substrate 1, and the protruding part 4 tilts upwards to thicken the metal layer on the side wall of the second groove 5 when the metal layer is formed on the substrate 1, so that the metal layer on the side wall of the second groove 5 is kept connected with the metal layer on the upper surface of the second photoresist layer 3 and is peeled off together when being peeled off, and the short circuit of a device caused by the fact that the metal layer is attached to the metal electrode 10 or the substrate 1 due to tearing is avoided.
In this embodiment: the substrate 1 may be a wafer.
The first included angle 7 is five degrees.
Example 2:
the first included angle 7 is fifteen degrees on the basis of example 1.
Example 3:
on the basis of the embodiment 1 and the embodiment 2, those skilled in the art can know that the first angle is different, and the connection strength between the metal layer on the sidewall of the first groove 6 of the second photoresist layer 3 and the metal layer 8 on the upper surface of the second photoresist layer is also different, and in order to obtain the ideal first included angle 7, those skilled in the art can perform experiments according to the technical scheme disclosed in the present invention.
On the basis of the embodiment 1 and the embodiment 2, the baking temperature of the third baking is 100-130 ℃, and the baking time is 1-5 min. Those skilled in the art can perform experiments according to the temperature range and baking time disclosed in the present invention and derive the corresponding relationship curve. So that the desired first angle is obtained by adjusting the temperature and time.
Example 4:
on the basis of examples 1-3, the method for producing a metal layer on the substrate 1 can be metal evaporation. A metal layer is formed on the substrate 1 by metal evaporation. Other methods such as sputtering biomimetics may also be used by those skilled in the art. All metal layer generation schemes which can achieve similar technical effects can be used. A similar technical effect as described above is particularly the generation of a metal layer on the substrate 1.
The substrate 1 is coated with a first photoresist layer 2 and a second photoresist layer 3 from bottom to top in sequence, and specifically comprises the following steps:
uniformly coating a first photoresist on the substrate 1, and enabling the thickness of the formed first photoresist layer 2 to be larger than that of the metal electrode 10 to be deposited; carrying out first baking on the first photoresist layer 2, and removing a first solvent remained in the first photoresist layer 2; uniformly coating a second photoresist on the first photoresist layer 2 to form a second layer of photoresist; and carrying out second baking on the second photoresist layer 3, and removing the second solvent remained in the second photoresist layer 3.
In the above method for coating the photoresist, those skilled in the art can adopt other coating methods according to the needs. Regardless of the coating method, further processing of the first and second photoresist layers 2 and 3 is required to facilitate stripping during the stripping process.
The processing method comprises the steps of forming a first groove 6 in the first photoresist layer 2 and forming a second groove 5 in the second photoresist layer 3, wherein the forming method of the first groove 6 and the second groove 5 comprises the following steps:
and exposing and developing the first photoresist layer 2 and the second photoresist layer 3 to form a first groove 6 on the first photoresist layer 2 and a second groove 5 on the second photoresist layer 3.
Further, after the production of the metal layer is completed, a peeling operation is required. The stripping operation strips the first photoresist layer 2, the second photoresist layer 3 and the unwanted metal layer. In the technical solution disclosed in the present invention, the stripping the first photoresist layer 2, the second photoresist layer 3, and the metal layer 9 deposited on the upper surface of the second photoresist layer 3 and the sidewall of the second groove specifically includes:
the first photoresist layer 2, the second photoresist layer 3 and the metal layer 9 deposited on the upper surface of the second photoresist layer 3 and the sidewalls of the second groove are stripped using an organic solution.
The working process of the invention is as follows: uniformly coating a first photoresist on the substrate 1, and enabling the thickness of the formed first photoresist layer 2 to be larger than that of the metal electrode 10 to be deposited; carrying out first baking on the first photoresist layer 2, and removing a first solvent remained in the first photoresist layer 2; uniformly coating a second photoresist on the first photoresist layer 2 to form a second layer of photoresist; and carrying out second baking on the second photoresist layer 3, and removing the second solvent remained in the second photoresist layer 3.
And exposing and developing the first photoresist layer 2 and the second photoresist layer 3 to form a first groove 6 on the first photoresist layer 2 and a second groove 5 on the second photoresist layer 3.
And carrying out third baking on the second photoresist layer 3 to tilt the protruding part 4 of the second photoresist layer 3 above the first groove 6 towards the direction far away from the substrate 1, wherein the included angle between the protruding part 4 and the substrate 1 is a first included angle 7, and the first included angle 7 is larger than zero degree.
The first photoresist layer 2, the second photoresist layer 3 and the metal layer 9 deposited on the upper surface of the second photoresist layer 3 and the sidewalls of the second groove are stripped using an organic solution.
A substrate 1 with a metal electrode 10 is obtained.
Example 5:
by applying the manufacturing method of embodiments 1 to 4, an intermediate of a semiconductor device can be obtained, which includes a substrate, and a first photoresist layer 2 and a second photoresist layer 3 are sequentially coated on the substrate 1 from bottom to top, wherein a first groove 6 is formed on the first photoresist layer 2, a second groove 5 is formed on the second photoresist layer 3, the second groove 5 is directly above the first groove 6, and the width of the second groove is smaller than that of the first groove 5; the protruding portion of the second photoresist layer 3 above the first groove 6 tilts towards the direction away from the substrate 1, the included angle between the protruding portion and the substrate 1 is a first included angle 7, and the first included angle 7 is larger than zero.
Further, the first included angle 7 ranges from five degrees to fifteen degrees.
Further, the substrate is deposited to form a metal layer 9, and the metal layer 9 comprises a metal layer 8 on the surface of the second photoresist, a metal layer 9 on the side wall of the second groove, and a metal electrode 10 in the first groove.
To sum up, the embodiment of the present invention provides a method for manufacturing a semiconductor device and an intermediate device, wherein the second photoresist layer 3 is baked for the third time, so that the protruding portion 4 of the second photoresist layer 3 above the first groove 6 tilts up in a direction away from the substrate 1, and the tilting up of the protruding portion 4 can thicken the metal layer on the sidewall of the second groove 5 when the metal layer is formed on the substrate 1, so that the metal layer on the sidewall of the second groove 5 is kept connected with the metal layer on the upper surface of the second photoresist layer 3, and is peeled off together during peeling, and the metal layer is not torn to adhere to the metal electrode 10 or the substrate 1 to cause a short circuit of the device.
Compared with the prior art, the intermediate piece of the semiconductor device can ensure that the metal layer and the photoresist layer are stripped together when the metal layer and the photoresist layer are stripped, and can not be attached to a metal electrode or a substrate to cause device short circuit due to tearing.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method of manufacturing a semiconductor device, characterized in that,
performing third baking on the second photoresist layer to enable the protruding portion, located above the first groove, of the second photoresist layer to tilt in the direction away from the substrate, wherein the included angle between the protruding portion and the substrate is a first included angle, and the first included angle is larger than zero degree; the substrate is sequentially coated with a first photoresist layer and a second photoresist layer from bottom to top, wherein a first groove is formed in the first photoresist layer, a second groove is formed in the second photoresist layer, the second groove is located right above the first groove, and the width of the second groove is smaller than that of the first groove;
depositing a metal layer on the substrate, wherein the metal layer comprises a metal layer on the upper surface of the second photoresist, a metal layer on the side wall of the second groove and a metal electrode in the first groove;
and stripping the first photoresist layer, the second photoresist layer, the metal layer deposited on the upper surface of the second photoresist layer and the metal layer on the side wall of the second groove to leave the required metal electrode on the substrate.
2. The method of claim 1, wherein the first included angle is in a range of five degrees to fifteen degrees.
3. The method for manufacturing a semiconductor device according to claim 1, wherein the baking temperature of the third baking is 100 ℃ to 130 ℃ and the baking time is 1min to 5 min.
4. The method according to claim 1, wherein the depositing a metal layer on the substrate comprises:
and forming a metal layer on the substrate by metal evaporation.
5. The method according to claim 1, wherein the first photoresist layer and the second photoresist layer are sequentially coated on the substrate from bottom to top, and specifically:
uniformly coating a first photoresist on a substrate, wherein the thickness of the formed first photoresist layer is larger than that of a metal electrode to be deposited;
carrying out first baking on the first photoresist layer, and removing a first solvent remained in the first photoresist layer;
uniformly coating a second photoresist on the first photoresist layer to form a second layer of photoresist;
and carrying out second baking on the second photoresist layer, and removing the residual second solvent in the second photoresist layer.
6. The method for manufacturing a semiconductor device according to claim 1, wherein the opening method of the first groove and the second groove is:
and carrying out exposure and development treatment on the first photoresist layer and the second photoresist layer to enable the first photoresist layer to form a first groove and the second photoresist layer to form a second groove.
7. The method according to claim 1, wherein the stripping the first photoresist layer, the second photoresist layer and the metal layer deposited on the upper surface of the second photoresist layer and the sidewall of the second groove comprises:
and stripping the first photoresist layer, the second photoresist layer and the metal layer deposited on the upper surface of the second photoresist layer and the side wall of the second groove by using an organic solution.
8. An intermediate of a semiconductor device, which is obtained by applying the manufacturing method of claims 1 to 7, and comprises a substrate, wherein a first photoresist layer and a second photoresist layer are sequentially coated on the substrate from bottom to top, wherein a first groove is formed on the first photoresist layer, a second groove is formed on the second photoresist layer, the second groove is right above the first groove, and the width of the second groove is smaller than that of the first groove; the second photoresist layer is located the protruding portion of first recess top and to the direction perk of keeping away from the substrate, the contained angle of protruding portion and substrate is first contained angle, first contained angle is greater than the zero degree.
9. An intermediate body of a semiconductor device as recited in claim 8, wherein the first included angle is in a range of five degrees to fifteen degrees.
10. An intermediate body of a semiconductor device according to any one of claims 8 or 9, wherein the substrate is deposited to form a metal layer, the metal layer comprising a metal layer on the upper surface of the second photoresist, a metal layer on the sidewall of the second recess, and a metal electrode in the first recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110311450.2A CN113140451A (en) | 2021-03-23 | 2021-03-23 | Manufacturing method and intermediate of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110311450.2A CN113140451A (en) | 2021-03-23 | 2021-03-23 | Manufacturing method and intermediate of semiconductor device |
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| CN113140451A true CN113140451A (en) | 2021-07-20 |
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| CN202110311450.2A Pending CN113140451A (en) | 2021-03-23 | 2021-03-23 | Manufacturing method and intermediate of semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242863A (en) * | 2021-12-09 | 2022-03-25 | 淮安澳洋顺昌光电技术有限公司 | Electrode, preparation method thereof and LED chip |
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| KR20150049065A (en) * | 2013-10-29 | 2015-05-08 | 에스티에스반도체통신 주식회사 | Baking apparatus for photoresist |
| CN107452597A (en) * | 2016-05-30 | 2017-12-08 | 松下知识产权经营株式会社 | The manufacture method of element chip |
| CN111399338A (en) * | 2020-04-30 | 2020-07-10 | 合肥本源量子计算科技有限责任公司 | Photoetching method |
| WO2020217490A1 (en) * | 2019-04-26 | 2020-10-29 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
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- 2021-03-23 CN CN202110311450.2A patent/CN113140451A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070167023A1 (en) * | 2003-02-05 | 2007-07-19 | Shunpei Yamazaki | Manufacturing method for wiring |
| KR20150049065A (en) * | 2013-10-29 | 2015-05-08 | 에스티에스반도체통신 주식회사 | Baking apparatus for photoresist |
| CN107452597A (en) * | 2016-05-30 | 2017-12-08 | 松下知识产权经营株式会社 | The manufacture method of element chip |
| WO2020217490A1 (en) * | 2019-04-26 | 2020-10-29 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
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| CN114242863A (en) * | 2021-12-09 | 2022-03-25 | 淮安澳洋顺昌光电技术有限公司 | Electrode, preparation method thereof and LED chip |
| CN114242863B (en) * | 2021-12-09 | 2024-03-01 | 淮安澳洋顺昌光电技术有限公司 | Electrode, preparation method thereof and LED chip |
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Application publication date: 20210720 |
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