CN113140450B - Method for preparing film and application - Google Patents

Method for preparing film and application Download PDF

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CN113140450B
CN113140450B CN202010061165.5A CN202010061165A CN113140450B CN 113140450 B CN113140450 B CN 113140450B CN 202010061165 A CN202010061165 A CN 202010061165A CN 113140450 B CN113140450 B CN 113140450B
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thin film
ion implantation
preform
film material
bonding
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CN113140450A (en
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李真宇
张秀全
杨超
李洋洋
张涛
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Jinan Jingzheng Electronics Co Ltd
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10N30/00—Piezoelectric or electrostrictive devices
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Abstract

The application discloses a method for preparing a film, which comprises the steps of carrying out ion implantation on a bonding surface of a film material, wherein an obtained ion implantation layer is a curved surface; respectively carrying out surface treatment on the bonding surfaces of the film material and the substrate material, and bonding the film material and the substrate material; the bonded body is subjected to heat treatment, so that a film material is peeled along an ion implantation layer which is a curved surface, optionally, the peeled film can be subjected to post-treatment such as polishing, the method can be used for preparing a film with specific surface type parameters on a substrate according to the practical application requirements, and particularly, based on the polishing and other post-treatment modes in the prior art, the method provided by the application can be used for preparing a single crystal film with the nonuniformity of the corrected film, so that the thickness uniformity of the single crystal film obtained by post-treatment such as polishing is improved.

Description

Method for preparing film and application
Technical Field
The application belongs to the field of semiconductor element preparation, and particularly relates to a method for preparing a film and application thereof.
Background
The piezoelectric film material such as lithium niobate has excellent nonlinear optical characteristics, piezoelectric characteristics, electro-optic characteristics and acousto-optic characteristics, has wide application in the aspects of optical signal processing, information storage, radio frequency filters and the like, and particularly has great advantages in the fields of electro-optic modulators and radio frequency filters. The thickness uniformity of the piezoelectric film can have some impact on the frequency of use, loss, stability, and uniformity of the final device. In practical application, the thickness of the piezoelectric film is generally required to be very uniform, so that the performance stability of the device can be ensured, the utilization rate of the film by downstream manufacturers can be improved, and the production cost is saved. Based on these requirements, it is very important to effectively adjust or correct the thickness variation of the thin film.
Fig. 1 is a schematic view illustrating a conventional process flow for preparing a single crystal thin film, and as shown in fig. 1, a method for preparing a piezoelectric thin film according to the prior art includes the steps of:
performing ion implantation on the piezoelectric film material, and bonding the implantation piece with the substrate material;
placing the bonded body obtained by bonding into an annealing furnace for high-temperature annealing, after preserving the heat in the annealing furnace for a certain time, separating the piezoelectric film material along the injection layer, and forming a layer of piezoelectric film on the substrate material, thereby obtaining a piezoelectric film semi-finished product;
and (4) performing surface treatment such as polishing to smooth the surface of the semi-finished piezoelectric film product, and finally obtaining a finished product.
At present, the depth of ion implantation is the same in the same ion implantation process, that is, the ion implantation layer formed in the film material is a planar layer, and it is difficult to obtain curved surface ion implantation layers with different implantation depths in the same ion implantation process, so that it is difficult to prepare a piezoelectric film with a preset variation rule in thickness by the above method.
Further, in the above method, the surface treatment is usually carried out by placing the piezoelectric film semifinished product on a polishing table in which the piezoelectric film layer is placed downward, pressing the semifinished product with a balloon above the semifinished product, and then rotating the polishing table to thereby carry out polishing. Since the pressure of the bladder may not be perfectly uniform, the bladder and polishing pad may deform to some extent at the edge of the wafer, resulting in a large non-uniformity between the center and the edge of the wafer during polishing. The deformation of the wafer caused by such non-uniformity is related to the polishing parameters such as pressure, slurry, pad selection, etc., and is reproducible.
Disclosure of Invention
In order to solve the problem that a piezoelectric film with a preset change rule in thickness cannot be prepared, the method for preparing the film enables an ion implantation layer in a film material to form a curved surface structure through a prefabricated body, and forms the film with the preset change rule in thickness on a substrate material after stripping. Particularly, for lithium niobate, lithium tantalate and other lithium-containing piezoelectric thin film materials, the introduction of the preform can also inhibit lithium ions from volatilizing in the ion implantation process of the thin film materials, and improve the film properties, such as piezoelectricity and uniformity of film components.
The present application aims to provide the following aspects:
in a first aspect, a method of making a film, the method comprising the steps of:
performing ion implantation on the bonding surface of the film material, wherein the obtained ion implantation layer is a curved surface;
respectively carrying out surface treatment on the bonding surfaces of the film material and the substrate material, and bonding the film material and the substrate material;
and carrying out heat treatment on the bonded body after bonding to strip the film material along the ion implantation layer with the curved surface.
The method comprises the step of implanting an ion implantation layer with a specific form into a thin film material, so that the thin film with the specific form is formed on a substrate material.
In one implementation, the ion-implanted layer is a dome-shaped curved surface.
Optionally, the ion implantation surface protrudes towards the bonding surface.
In one implementation, the implanting ions into the thin film material includes:
manufacturing a prefabricated body on the bonding surface of the film material;
performing ion implantation into the thin film material through the preform;
and removing the prefabricated body after ion implantation is finished.
Wherein the ion implantation surface of the preform is a curved surface.
Furthermore, the surface type and the curved surface parameters of the preform are respectively and correspondingly matched with the surface type and the curved surface parameters of a curved surface formed after the planar single crystal film is subjected to post-treatment.
Optionally, the preform is close to or the same as the physical and chemical parameters of the thin film material, such as silicon dioxide, lithium tantalate, and sodium niobate.
In an implementable manner, the preform may be prepared according to a process comprising the steps of:
manufacturing a prefabricated body substrate on the bonding surface of the thin film material,
and carrying out post-treatment on the preform substrate in the same way as the single crystal thin film, wherein polishing is an optional treatment.
Optionally, the thickness of the preform matrix is slightly greater than the thickness removed by post-processing the preform matrix to avoid contact with the piezoelectric material during post-processing, such as polishing, of the preform matrix, which is trimmed to a thickness approximately equal to the thickness of the ion-defect layer on the resulting thin film separated from the thin film material.
In a practical manner, the thickness removed by post-processing the preform is matched to the thickness removed by post-processing the monocrystalline film formed on the substrate material, thereby ensuring that the amount of deformation on the preform compensates for the amount of deformation caused by post-processing the monocrystalline film in equal proportion.
In an implementation manner, the method further comprises, after the thin film material is peeled along the ion implantation layer having the curved surface:
the single crystal thin film obtained by peeling off the substrate material is subjected to post-treatment.
Optionally, after the post-processing of the single crystal thin film is completed, the single crystal thin film is a plane.
In a second aspect, the present application also provides a single crystal thin film that is peeled or prepared by the method of the aforementioned first aspect.
In a third aspect, the present application further provides a wafer, which includes a substrate and the single crystal thin film of the second aspect, wherein the single crystal thin film is attached to a surface of the substrate.
Compared with the prior art, the method for preparing the thin film can prepare the thin film with specific surface type parameters on the substrate according to the practical requirements of application, and particularly, based on the post-treatment modes such as polishing and the like in the prior art, the method can prepare the thin film with the non-uniformity caused by the post-treatment modes such as polishing and the like, so that the thickness uniformity of the single crystal thin film obtained by the post-treatment modes such as polishing and the like is improved.
Drawings
FIG. 1 is a schematic view showing a conventional process flow for preparing a single crystal thin film;
FIG. 2 shows a schematic flow chart of a preferred embodiment of the present application for preparing a thin film;
fig. 3 shows a bond provided with a plurality of sub-preforms.
Description of the reference numerals
1-thin film material, 2-ion implantation layer, 3-prefabricated body, 4-substrate material and 5-bonding body.
Detailed Description
The present invention is further described in conjunction with the following specific embodiments, the features and advantages of which will become more apparent and apparent as the description proceeds.
The present invention is described in detail below.
Fig. 2 is a schematic flow chart illustrating a method for manufacturing a thin film according to a preferred embodiment of the present application, and as shown in fig. 2, the method for manufacturing a thin film provided by the present application at least includes the following steps 1 to 3:
step 1, performing ion implantation on a bonding surface of a film material, wherein an obtained ion implantation layer is a curved surface.
In this application, the thin film material refers to a die raw material for forming a single crystal thin film on a substrate material, and optionally, the thin film material is also a wafer and has the same diameter as that of the substrate material.
The film material comprises lithium niobate, lithium tantalate and the like, and can also be other materials which can form a single crystal film on a substrate material by adopting an ion implantation mode in the prior art.
As shown in fig. 2, ion implantation can be performed from one side of the thin film material (1) to the inside of the thin film material, so as to form an ion implantation layer (2) inside the thin film material, wherein the surface of the thin film material for ion implantation needs to be flat and smooth, and one way to achieve the above roughness requirement is to polish the implantation surface of the thin film material.
It is understood that the ion implantation surface of the thin film material is the bonding surface thereof bonded with the substrate material.
The ion implantation method is not particularly limited, and any ion implantation method in the prior art may be adopted, and the implanted ions may be ions that can be heat-treated to generate gas, for example: hydrogen ions or helium ions.
The ions in the ion implantation layer can generate gas through heat treatment, the generated gas can divide the film material into two parts along the ion implantation layer, and the part bonded with the substrate material is peeled to form the single crystal film.
After ion implantation, the film material forms a defect layer on the upper and lower interfaces of the ion implantation layer, that is, the single crystal film prepared by ion implantation has a defect layer on the surface thereof, and the defect layer is removed by means of etching, polishing and the like, so that the distance between the ion implantation layer and the bonding surface of the film material is slightly larger than the thickness of the target film layer, thereby remaining the margin for removing the defect layer on the single crystal film layer.
Further, the difference between the distance from the ion implantation layer to the bonding surface of the thin film material and the thickness of the single crystal thin film layer is slightly larger than or equal to the thickness of the defect layer, for example, the thickness of the defect layer formed in the thin film material by ion implantation is 20nm, and the distance from the ion implantation layer to the bonding surface of the thin film material is 22-25 nm larger than the thickness of the thin film layer, so that the defect layer can be completely removed, and the thin film layer is not lost.
In this application, the ion implantation layer is the curved surface structure, the curved surface is for having the curved surface of predetermineeing the face type, and this application is right the face type of curved surface does not do the special limitation, can be any kind of curved surface type among the prior art, and can specifically set for as required, for example, dome shape curved surface.
In the present application, the curved surface structure of the ion-implanted layer can be expressed by a continuous variation of the implantation depth of the ion-implanted layer in the thin film material.
Further, the ion concentration at each position in the ion implantation layer may be equal or different, and optionally, the ion implantation concentration may be appropriately increased for a position with a large stress.
In one example, the ion implantation layer is a dome-shaped curved surface structure, and the ion implantation layer is protruded or recessed towards the bonding surface, for example, the ion implantation layer is protruded towards the bonding surface.
In one example, the ion implantation into the bonding surface of the thin film material includes the following steps 1-1 to 1-3:
step 1-1, bonding a prefabricated body (3) on a bonding surface of a film material;
in this example, the physical and chemical parameters of the preform and the thin film material are close to or the same, for example, silicon dioxide, lithium tantalate, sodium niobate, and the like.
In one example, the preform and the thin film material have different solubilities in the same solvent to facilitate washing the preform from the bonding surface of the thin film material after ion implantation is completed.
In another example, the preform is of a different flammability than the film material, specifically, the preform has a much lower fire point than the film material and a low ash content to facilitate combustion removal of the preform after ion implantation is complete.
It will be appreciated that there is a difference in certain physico-chemical parameters between the preform and the thin film material so that the preform is completely removed from the bonding surface of the thin film material after ion implantation is completed and the bonding surface of the thin film material remains intact.
In this example, the ion implantation surface of the preform is a curved surface; furthermore, the surface type and the curved surface parameters of the preform are respectively and correspondingly matched with the surface type and the curved surface parameters of a curved surface formed after the planar single crystal film is subjected to post-treatment.
The applicant has found that the physical and chemical parameters of the preform and the film material may be similar or identical, i.e. the preform and the film material may be made of different materials or the same material.
In one example, it is difficult for a preform different from the thin film material in material to be identical to the physicochemical properties of the thin film material, and therefore, a mapping function of the curved surface of the ion implantation layer and the curved surface of the preform may be calculated according to the physicochemical parameters of the preform and the thin film material and the behavior parameters of the implanted ions in the preform and the thin film material, and then the curved surface parameter of the ion implantation surface of the preform may be calculated according to the preset curved surface parameter of the ion implantation layer and the mapping function.
It will be understood that if the remaining physical and chemical parameters of the preform are identical to the corresponding physical and chemical parameters of the film material, and the behavior parameters of the implanted ions in the preform are identical to the behavior parameters of the film material, in addition to the solubility parameters, the profile parameters of the implanted surface of the preform are identical to the profile parameters of the ion-implanted layer.
In another example, a preform which is the same as the film material in material can be bonded on the bonding surface of the film material by adopting a temporary bonding mode, and the bonding of the preform is released after the ion implantation is completed. In this example, the temporary bonding may be attaching the preform to the bonding face of the film material by a bonding glue.
It will be appreciated that the perfect compensation of the inhomogeneities introduced by the post-treatment is ensured when the preform is completely identical to the film material. In one example, the preform may be prepared according to a method comprising the steps of:
bonding a prefabricated body substrate on the bonding surface of the thin film material;
and carrying out post-treatment on the preform substrate in the same way as the single crystal thin film.
In this example, the material of the preform matrix is the same as that of the preform, and the preform matrix is used for preparing the preform. Alternatively, the preform substrate may be a planar structure, or may be other structures that facilitate the fabrication of the preform.
In this example, the preform matrix is illustrated as a planar structure having a thickness slightly greater than that removed by post-processing of the preform matrix to avoid contact with the piezoelectric material during post-processing such as polishing. It will be appreciated that if the preform matrix is a non-planar structure, the minimum thickness of the preform matrix is slightly greater than that removed by post-processing the preform matrix.
In another example, the preform includes a plurality of sub-preforms bonded to the ion implantation surface of the thin film material separately from each other, and fig. 3 shows a bonding body provided with a plurality of sub-preforms, as shown in fig. 3, a plurality of sub-preforms (3) are dispersedly bonded to the ion implantation surface of the thin film material (1), and an ion implantation layer (2) having a specific structure can be formed inside the thin film material after ion implantation is performed.
Optionally, the preform may be subjected to post-processing, such as etching, polishing, etc., for example, the preform is etched, the thickness of the preform after etching is uniformly reduced, or the thickness of the preform after grinding is non-uniformly reduced, but the morphology of the preform after etching is trimmed to a predetermined morphology.
And 1-2, performing ion implantation into the thin film material through the prefabricated body.
In this example, the ion implantation may be performed into the thin-film material from the surface of the preform through the preform, and since the preform has a predetermined morphology, the implanted ions also form a matching predetermined morphology in the thin-film material,
for example, the preform is in a dome shape with a thick center and a thin edge, and the ion implantation layer formed after ion implantation has different depths in the thin film material and shows a dome structure with a center protruding toward the bonding surface, but the ion implantation layers have equal thicknesses and the ion implantation concentrations may be equal or unequal.
In this example, the morphology of the ion implantation layer is correspondingly matched with the morphology of the preform, and the morphology parameters of the ion implantation layer and the preform morphology parameters can be calculated according to the hardness, the density, the unit cell parameters, the physicochemical parameters such as the shielding capability of the preform for ions, and the like.
And 1-3, removing the prefabricated body after ion implantation is finished.
In one example, the preform may be removed by physical or chemical means while ensuring that the thin film material is not lost and that the bonding surface meets the bonding requirements, e.g., roughness below 0.5nm, etc.
Further, the preform may be removed by using the difference in solubility between the preform and the film material, or the difference in ignition point, or the like. For example, when tantalum niobate is used as a thin film material and silicon dioxide is used as a preform, the silicon dioxide preform can be cleaned with hydrofluoric acid after ion implantation by utilizing the difference in solubility between the tantalum niobate and the silicon dioxide in hydrofluoric acid.
Optionally, the depth of ion implantation may be slightly greater than the target implantation depth during ion implantation, and after removing the preform, the bonding surface may be ground or polished to meet the bonding requirement.
And 2, respectively carrying out surface treatment on the bonding surfaces of the film material and the substrate material, and bonding the film material and the substrate material.
In the present application, the substrate material (4) may be a substrate made of any one of the materials in the prior art, and further, the substrate material may be a single substrate or a composite substrate, specifically, a silicon substrate having a thermal oxide layer, a silicon substrate having a deposited silicon oxide layer, a silicon substrate having a silicon nitride layer, or a composite substrate having other material layers, for example, a lithium niobate substrate, a quartz substrate, a sapphire substrate, or the like.
The applicant has found that the bonding force between the composite layer of the composite substrate and the base substrate is generally strong and does not debond during the heat treatment process or the subsequent mechanical application process.
In an implementable manner, the substrate material may have a thickness of 0.2 to 1 mm.
The method for bonding the thin film material and the substrate material is not particularly limited, and any method of bonding the thin film material and the substrate material in the prior art may be adopted, for example, the bonding surface of the thin film material is subjected to surface activation, the bonding surface of the substrate material is also subjected to surface activation, and then the two activated surfaces are bonded to obtain the bonded body (5).
The method for activating the surface of the thin film material is not particularly limited, and any method of activating the surface of the thin film material in the prior art, such as plasma activation and chemical solution activation, may be used; similarly, the substrate material surface activation method is not limited in particular, and any method that can be used for surface activation of the substrate material surface to be bonded in the prior art, such as plasma activation, can be used.
And 3, carrying out heat treatment on the bonded body after bonding to strip the film material along the ion implantation layer with the curved surface.
In the present application, the bond refers to a bond formed after a thin film material is bonded to a substrate material, wherein the thin film material is not peeled off from the substrate.
In one implementation, the temperature of the heat treatment is 150 ℃ to 250 ℃, the ions in the ion implantation layer, such as H, He plasma, can combine into corresponding molecules at the temperature, and a bubble layer composed of small bubbles is formed in the ion implantation layer, for example, H ions form hydrogen, He ions form helium, and the like, so that the thin film material can be separated along the ion implantation layer, and a single crystal thin film with a preset shape is formed on the surface of the substrate material.
In the foregoing example, the thickness removed by the post-processing such as polishing the preform is matched to the thickness removed by the post-processing such as polishing the single crystal thin film formed on the substrate material, thereby ensuring that the amount of deformation on the preform can compensate for the amount of deformation caused by the post-processing such as polishing of the single crystal thin film.
In the foregoing example, the dome-shaped ion implantation layer protruding toward the bonding face forms a concave-shaped thin film with a thin central edge thickness on the substrate material after peeling, and in one example, this thin film can correct the film thickness unevenness caused by post-processing such as polishing.
In an implementation manner, the method further comprises, after the thin film material is peeled along the ion implantation layer having the curved surface:
and 4, carrying out post-treatment on the single crystal film obtained by stripping the substrate material.
In one example, the post-processing includes grinding, polishing, and the like.
In one example, the film obtained by peeling has a predetermined amount of deformation so that the film is formed into a predetermined shape after the completion of the post-treatment.
Also taking the foregoing example as an example, the thickness difference between the edge of the film and the center can be made to just offset the edge deformation caused by the post-treatment, so that the peeled film becomes a plane with uniform thickness after the post-treatment such as polishing.
In a second aspect, the present application also provides a single crystal thin film that is peeled or prepared by the method of the aforementioned first aspect.
In a third aspect, the present application further provides a wafer, which includes a substrate and the single crystal thin film of the second aspect, wherein the single crystal thin film is attached to a surface of the substrate.
The substrate is not particularly limited in this application, and may be any one of the substrates in the related art, for example, a silicon-based substrate, a lithium niobate substrate, or a substrate having a multilayer structure.
Examples
Example 1
Depositing a layer of silicon dioxide on the bonding surface of the lithium niobate thin film material, wherein the silicon dioxide layer presents a recess with a thin middle part and a thick edge;
performing ion implantation on the lithium niobate thin film material from the surface of the silicon dioxide layer through the silicon dioxide layer, wherein the center of the obtained ion implantation layer protrudes away from the bonding surface, the thickness of the ion implantation layer is equal, and the ion implantation concentration is uniform;
washing with hydrofluoric acid to remove the silicon dioxide layer, activating the surfaces of the bonding surface of the lithium niobate and the bonding surface of the silicon-based substrate by adopting a plasma method, and bonding the lithium niobate and the silicon-based substrate;
and carrying out heat treatment on the obtained bonding body to separate the lithium niobate along the ion implantation layer, and forming a film with a convex shape on the silicon-based substrate.
Example 2
Depositing a silicon dioxide layer on the bonding surface of the lithium niobate thin film material, wherein the silicon dioxide layer presents a recess with thick middle and thin edge;
performing ion implantation on the lithium niobate thin film material from the surface of the silicon dioxide layer through the silicon dioxide layer, wherein the center of the obtained ion implantation layer protrudes towards the bonding surface, the thickness of the ion implantation layer is equal, and the ion implantation concentration is uniform;
washing with hydrofluoric acid to remove the silicon dioxide layer, activating the surfaces of the bonding surface of the lithium niobate and the bonding surface of the silicon-based substrate by adopting a plasma method, and bonding the lithium niobate and the silicon-based substrate;
and carrying out heat treatment on the obtained bonding body to separate the lithium niobate along the ion implantation layer, and forming a concave thin film on the silicon-based substrate.
Example 3
As shown in fig. 2, the thin film prepared in example 2 is polished, and the edge effect caused by the air bag used for polishing can be offset by the increased thickness of the edge of the thin film, so that the thickness uniformity of the lithium niobate thin film obtained after polishing is improved, and the thickness uniformity of the lithium niobate is detected to be within 8%.
Example 4
Temporarily bonding a lithium tantalate layer on the bonding surface of the lithium niobate thin film material through temporary bonding glue, wherein the lithium tantalate layer is a recess with thick middle and thin edge;
performing ion implantation on the lithium niobate thin film material from the surface of the lithium tantalate layer through the lithium tantalate layer, wherein the center of the obtained ion implantation layer protrudes towards the bonding surface, the thickness of the ion implantation layer is equal, and the ion implantation concentration is uniform;
heating and melting the temporary bonding glue to remove the lithium tantalate layer, activating the surfaces of the bonding surface of the lithium niobate and the bonding surface of the silicon-based substrate by adopting a plasma method, and bonding the lithium niobate and the silicon-based substrate;
and carrying out heat treatment on the obtained bonding body to separate the lithium niobate along the ion implantation layer, and forming a concave thin film on the silicon-based substrate.
And polishing the prepared lithium niobate thin film, wherein the edge effect caused by an air bag used for polishing can be offset by the thickness increased at the edge of the thin film, so that the thickness uniformity of the polished lithium niobate thin film is improved, and the thickness uniformity of the lithium niobate reaches 5% through detection.
Example 5
Temporarily bonding a lithium niobate layer on the bonding surface of the lithium niobate thin film material through temporary bonding glue, and polishing the lithium niobate layer to remove 200 nm;
ion implantation is carried out on the lithium niobate thin film material from the surface of the lithium niobate layer through the lithium niobate layer, the obtained ion implantation layer protrudes from the center to the bonding surface, the thickness of the ion implantation layer is equal, and the ion implantation concentration is uniform;
heating and melting the temporary bonding glue to remove the lithium niobate layer of the prefabricated body, activating the surfaces of the bonding surface of the lithium niobate and the bonding surface of the silicon-based substrate by adopting a plasma method, and bonding the lithium niobate and the silicon-based substrate;
and carrying out heat treatment on the obtained bonding body to separate the lithium niobate along the ion implantation layer, and forming a concave thin film on the silicon-based substrate.
And (3) polishing the prepared lithium niobate thin film under the same conditions of the prefabricated body, wherein the edge effect caused by polishing can be counteracted by the thickness increased at the edge of the thin film, so that the thickness uniformity of the polished lithium niobate thin film is improved, and the thickness uniformity of the lithium niobate is detected to be within 3%.
The method for preparing the thin film can prepare the thin film with specific surface type parameters on the substrate according to practical requirements of application, and particularly, based on the post-treatment modes such as polishing and the like in the prior art, the method can prepare the thin film with the non-uniformity caused by the post-treatment modes such as correcting polishing and the like, so that the thickness uniformity of the single crystal thin film obtained by the post-treatment modes such as polishing and the like is improved.
For example, as shown in fig. 1, according to the conventional polishing method, if a thin film with uniform thickness is formed on a silicon-based substrate after peeling, a thin film with thick center and thin edge as shown in fig. 1 may be formed after polishing, which reduces the uniformity of the thickness of the thin film, but by adopting the scheme provided by the present application, as shown in fig. 2, a planar thin film with significantly enhanced thickness uniformity can be obtained.
The present application has been described in detail with reference to specific embodiments and illustrative examples, but the description is not intended to limit the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the presently disclosed embodiments and implementations thereof without departing from the spirit and scope of the present disclosure, and these fall within the scope of the present disclosure. The protection scope of this application is subject to the appended claims.

Claims (14)

1. A method of making a film, comprising the steps of:
performing ion implantation on the bonding surface of the film material, wherein the obtained ion implantation layer is a curved surface;
respectively carrying out surface treatment on the bonding surfaces of the film material and the substrate material, and bonding the film material and the substrate material;
and carrying out heat treatment on the bonded body after bonding to strip the film material along the ion implantation layer with the curved surface.
2. The method of claim 1, wherein the ion-implanted layer is a dome-shaped curved surface.
3. The method of claim 2, wherein the ion implantation projects toward the bonding face.
4. The method of claim 3, wherein the implanting ions into the thin film material comprises:
manufacturing a prefabricated body on the bonding surface of the film material;
performing ion implantation into the thin film material through the preform;
and removing the prefabricated body after ion implantation is finished.
5. The method of claim 4, wherein the ion implantation surface of the preform is curved.
6. The method according to claim 4 or 5, wherein the preform has a surface shape and surface parameters respectively matched with those of a surface formed by polishing the planar single crystal film.
7. The method according to claim 4, wherein the preform is close to or the same as the film material physico-chemical parameters.
8. The method according to claim 4, wherein the preform is prepared according to a method comprising the steps of:
manufacturing a prefabricated body substrate on the bonding surface of the thin film material,
and carrying out post-treatment on the preform substrate in the same way as the single crystal thin film.
9. The method of claim 8, wherein the thickness of the preform matrix is slightly greater than the thickness removed by post-processing the preform matrix.
10. A method according to claim 8 or 9, characterized in that the thickness removed by post-processing the preform is matched to the thickness removed by post-processing the monocrystalline film formed on the substrate material.
11. The method of claim 1, further comprising, after the step of peeling the film material along the ion-implanted layer having a curved surface:
the single crystal thin film obtained by peeling off the substrate material is subjected to post-treatment.
12. The method of claim 11, wherein the single crystal thin film is planar after post-processing the single crystal thin film.
13. A single crystal thin film produced by the method of any one of claims 1 to 12.
14. A wafer comprising a substrate and the single crystal thin film of claim 13 attached to a surface of the substrate.
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